JP2017201045A5 - - Google Patents

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Publication number
JP2017201045A5
JP2017201045A5 JP2016033893A JP2016033893A JP2017201045A5 JP 2017201045 A5 JP2017201045 A5 JP 2017201045A5 JP 2016033893 A JP2016033893 A JP 2016033893A JP 2016033893 A JP2016033893 A JP 2016033893A JP 2017201045 A5 JP2017201045 A5 JP 2017201045A5
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JP
Japan
Prior art keywords
titanium oxide
oxide layer
semiconductor electrode
conductive titanium
oxynitride film
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JP2016033893A
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English (en)
Japanese (ja)
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JP6578989B2 (ja
JP2017201045A (ja
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Publication of JP2017201045A5 publication Critical patent/JP2017201045A5/ja
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JP2016033893A 2016-02-25 2016-02-25 光半導体電極 Active JP6578989B2 (ja)

Priority Applications (1)

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JP2016033893A JP6578989B2 (ja) 2016-02-25 2016-02-25 光半導体電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016033893A JP6578989B2 (ja) 2016-02-25 2016-02-25 光半導体電極

Publications (3)

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JP2017201045A JP2017201045A (ja) 2017-11-09
JP2017201045A5 true JP2017201045A5 (https=) 2018-08-16
JP6578989B2 JP6578989B2 (ja) 2019-09-25

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JP2016033893A Active JP6578989B2 (ja) 2016-02-25 2016-02-25 光半導体電極

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JP (1) JP6578989B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10162278B2 (en) * 2017-02-28 2018-12-25 Canon Kabushiki Kaisha Electrophotographic photosensitive member, process cartridge and electrophotographic apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204667A (ja) * 2010-03-04 2011-10-13 Sumitomo Chemical Co Ltd 酸化チタン系透明導電性基板の製造方法
WO2012090390A1 (ja) * 2010-12-28 2012-07-05 パナソニック株式会社 光半導体およびその製造方法、並びに、光半導体デバイス、光触媒、水素生成デバイスおよびエネルギーシステム
US9353449B2 (en) * 2011-08-02 2016-05-31 Panasonic Intellectual Property Management Co., Ltd. Method for producing NbON film
JP2015227503A (ja) * 2014-05-09 2015-12-17 パナソニックIpマネジメント株式会社 水を分解することによって水素を発生させる方法、ならびにそのために用いられる光電気化学セルおよび半導体電極

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