JP2017190286A - 炭化珪素単結晶基板 - Google Patents
炭化珪素単結晶基板 Download PDFInfo
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- JP2017190286A JP2017190286A JP2017140575A JP2017140575A JP2017190286A JP 2017190286 A JP2017190286 A JP 2017190286A JP 2017140575 A JP2017140575 A JP 2017140575A JP 2017140575 A JP2017140575 A JP 2017140575A JP 2017190286 A JP2017190286 A JP 2017190286A
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- silicon carbide
- single crystal
- main surface
- carbide single
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- 239000013078 crystal Substances 0.000 title claims abstract description 306
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 288
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 285
- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 239000002994 raw material Substances 0.000 abstract description 98
- 238000004519 manufacturing process Methods 0.000 abstract description 28
- 238000000034 method Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000003763 carbonization Methods 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000004854 X-ray topography Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】炭化珪素単結晶基板10の製造方法は以下の工程を備えている。主面2aを有しかつ炭化珪素からなる種結晶2と、炭化珪素原料3とが準備される。炭化珪素原料3内の任意の2点間における温度勾配を30℃/cm以下に維持しつつ炭化珪素原料3を昇華させることにより、主面2a上に炭化珪素単結晶1を成長させる。種結晶2の主面2aは、{0001}面または{0001}面から10°以下オフした面であり、かつ主面2aにおける螺旋転位密度が20/cm2以上である。
【選択図】図2
Description
発明者らは、結晶品質の良好な炭化珪素単結晶の製造方法について鋭意検討の結果、以下の知見を得て本発明を見出した。
aの最大寸法は100mm以上である。主面10a内の任意の1cm離れた2点間におけ
る{0001}面方位差は35秒以下である。炭化珪素のポリタイプが4Hである。これにより、主面10aの最大寸法が100mm以上であり、かつ結晶品質の優れた炭化珪素単結晶基板10を得ることができる。
まず、本実施の形態に係る炭化珪素単結晶基板の構成について図1〜図3を参照して説明する。
第2の主面、3 炭化珪素原料、3a 表面、3b 裏面、4 種結晶保持部、5 原
料収容部、6 放射温度計、10 炭化珪素単結晶基板、100 製造装置、D1,D2
寸法、R1 原料領域、R2 成長領域、R3 ファセット部、R4 非ファセット部
、S1 第1のスポット、S2 第2のスポット、a1,a2 位置、c1,c2 面方
位、d1,d2 スポット径、e 転位線、n 法線方向。
Claims (2)
- 主面を備え、
前記主面の最大寸法は150mm以上であり、前記主面は{0001}面から10°以下オフしており、
前記主面内の任意の1cm離れた2点間における{0001}面方位差は35秒以下であり、
炭化珪素のポリタイプが4Hである、炭化珪素単結晶基板。 - 前記主面における螺旋転位密度は、20/cm2以上100000/cm2以下である、請求項1に記載の炭化珪素単結晶基板。
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JP2017140575A JP6748613B2 (ja) | 2017-07-20 | 2017-07-20 | 炭化珪素単結晶基板 |
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JP2017140575A JP6748613B2 (ja) | 2017-07-20 | 2017-07-20 | 炭化珪素単結晶基板 |
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JP2013139771A Division JP6183010B2 (ja) | 2013-07-03 | 2013-07-03 | 炭化珪素単結晶基板およびその製造方法 |
Publications (2)
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JP2017190286A true JP2017190286A (ja) | 2017-10-19 |
JP6748613B2 JP6748613B2 (ja) | 2020-09-02 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20200031515A (ko) * | 2018-09-14 | 2020-03-24 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 레이저 가공 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001294499A (ja) * | 2000-04-06 | 2001-10-23 | Nippon Steel Corp | モザイク性の小さな炭化珪素単結晶ウエハ |
JP2009542571A (ja) * | 2006-07-06 | 2009-12-03 | クリー, インコーポレイティッド | 軸オフの種結晶上での100ミリメートル炭化ケイ素結晶の成長 |
JP2011219296A (ja) * | 2010-04-07 | 2011-11-04 | Nippon Steel Corp | 炭化珪素単結晶ウェハ |
JP2013067523A (ja) * | 2011-09-21 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素基板およびその製造方法 |
-
2017
- 2017-07-20 JP JP2017140575A patent/JP6748613B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001294499A (ja) * | 2000-04-06 | 2001-10-23 | Nippon Steel Corp | モザイク性の小さな炭化珪素単結晶ウエハ |
JP2009542571A (ja) * | 2006-07-06 | 2009-12-03 | クリー, インコーポレイティッド | 軸オフの種結晶上での100ミリメートル炭化ケイ素結晶の成長 |
JP2011219296A (ja) * | 2010-04-07 | 2011-11-04 | Nippon Steel Corp | 炭化珪素単結晶ウェハ |
JP2013067523A (ja) * | 2011-09-21 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素基板およびその製造方法 |
Non-Patent Citations (1)
Title |
---|
R. YAKIMOVA: "Polytype stability in seeded sublimination growth of 4H-SiC boules", JOURNAL OF CRYSTAL GROWTH, vol. 217, JPN6018030958, 2000, pages 255 - 262, XP004213536, ISSN: 0003855545, DOI: 10.1016/S0022-0248(00)00488-7 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200031515A (ko) * | 2018-09-14 | 2020-03-24 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 레이저 가공 장치 |
JP2020047619A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
JP7128067B2 (ja) | 2018-09-14 | 2022-08-30 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
KR102690178B1 (ko) | 2018-09-14 | 2024-07-30 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 레이저 가공 장치 |
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