JP2017163143A5 - - Google Patents
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- JP2017163143A5 JP2017163143A5 JP2017044944A JP2017044944A JP2017163143A5 JP 2017163143 A5 JP2017163143 A5 JP 2017163143A5 JP 2017044944 A JP2017044944 A JP 2017044944A JP 2017044944 A JP2017044944 A JP 2017044944A JP 2017163143 A5 JP2017163143 A5 JP 2017163143A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor
- hydrogen peroxide
- carbon
- peroxide vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662305715P | 2016-03-09 | 2016-03-09 | |
| US62/305,715 | 2016-03-09 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017163143A JP2017163143A (ja) | 2017-09-14 |
| JP2017163143A5 true JP2017163143A5 (https=) | 2020-04-09 |
| JP6948808B2 JP6948808B2 (ja) | 2021-10-13 |
Family
ID=59786966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017044944A Active JP6948808B2 (ja) | 2016-03-09 | 2017-03-09 | 基板の蒸気相ヒドロキシルラジカル処理のためのシステム及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10490399B2 (https=) |
| JP (1) | JP6948808B2 (https=) |
| KR (1) | KR102362672B1 (https=) |
| CN (1) | CN107180774B (https=) |
| TW (1) | TWI774662B (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190119041A (ko) | 2017-01-09 | 2019-10-21 | 사이넥시스 엘엘씨 | 가금류 생산 방법에 대한 건조 과산화수소(dhp) 가스의 적용 |
| KR102111835B1 (ko) * | 2017-11-20 | 2020-05-15 | 한국과학기술원 | 서브 챔버를 구비한 iCVD 시스템 및 방법 |
| CN108380569A (zh) * | 2018-03-02 | 2018-08-10 | 常州瑞择微电子科技有限公司 | 高浓度oh自由基发生装置 |
| WO2020159854A1 (en) * | 2019-01-28 | 2020-08-06 | Tokyo Electron Limited | Photo-assisted chemical vapor etch for selective removal of ruthenium |
| CN110797245B (zh) * | 2019-10-28 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 一种半导体加工设备 |
| KR20230004523A (ko) * | 2020-04-14 | 2023-01-06 | 라시크 아이엔씨. | 수소 열화의 억제 |
| KR102520916B1 (ko) * | 2020-12-16 | 2023-04-11 | 동명대학교산학협력단 | 반도체 공정의 화학기계적 연마(cmp)를 위한 히드록시 라디칼과 용존산소량 제어를 통한 고능률 하이브리드 연마 시스템 |
| KR102489838B1 (ko) * | 2020-12-16 | 2023-01-17 | 동명대학교산학협력단 | 반도체 공정의 화학기계적 연마(CMP)를 위한 연마 입자 분산성 향상을 통한 시너지 효과 극대화와 SiC 및 GaN 기판 가공 방법 및 시스템 |
| WO2024074929A1 (en) * | 2022-10-03 | 2024-04-11 | Rasirc, Inc. | Hydrogen peroxide plasma etch of ashable hard mask |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1212953A (en) * | 1982-05-01 | 1986-10-21 | Ian M. Campbell | Nitration of organic compounds and organic nitrogen compounds produced |
| WO1991009987A1 (en) * | 1989-12-20 | 1991-07-11 | Hughes Aircraft Company | Peroxide composition for removing organic contaminants and method of using same |
| US5269850A (en) * | 1989-12-20 | 1993-12-14 | Hughes Aircraft Company | Method of removing organic flux using peroxide composition |
| JP3034720B2 (ja) * | 1993-03-31 | 2000-04-17 | ウシオ電機株式会社 | 表面洗浄方法もしくは表面改質方法 |
| JP3075352B2 (ja) * | 1998-04-15 | 2000-08-14 | 日本電気株式会社 | 化学的機械研磨液の供給方法および装置 |
| JP3540180B2 (ja) | 1998-12-24 | 2004-07-07 | 株式会社東芝 | 半導体装置の製造方法及び製造装置 |
| JP2002110611A (ja) * | 2000-10-04 | 2002-04-12 | Texas Instr Japan Ltd | 半導体ウェハの洗浄方法及び装置 |
| JP2002192089A (ja) * | 2000-12-25 | 2002-07-10 | Nomura Micro Sci Co Ltd | 洗浄方法 |
| JP2003077824A (ja) * | 2001-09-06 | 2003-03-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP4038557B2 (ja) * | 2002-04-16 | 2008-01-30 | リアライズ・アドバンストテクノロジ株式会社 | レジスト除去装置及びレジスト除去方法 |
| US6848455B1 (en) * | 2002-04-22 | 2005-02-01 | Novellus Systems, Inc. | Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species |
| US7364839B2 (en) * | 2002-07-24 | 2008-04-29 | Kabushiki Kaisha Toshiba | Method for forming a pattern and substrate-processing apparatus |
| JP2004073981A (ja) * | 2002-08-15 | 2004-03-11 | Tokyo Ohka Kogyo Co Ltd | 熱安定化装置の内部洗浄方法 |
| JP4034240B2 (ja) * | 2003-06-25 | 2008-01-16 | シャープ株式会社 | 剥離洗浄方法および剥離洗浄装置 |
| KR20070015260A (ko) * | 2005-07-30 | 2007-02-02 | 삼성전자주식회사 | 선형나노선재의 제조방법 및 이에 의한 선형나노선재그리고 선형나노선재를 이용한 박막트랜지스터 기판 |
| WO2007058287A1 (ja) * | 2005-11-18 | 2007-05-24 | Mitsubishi Gas Chemical Company, Inc. | 物質の改質方法及び改質装置 |
| US7527695B2 (en) * | 2006-06-21 | 2009-05-05 | Asahi Glass Company, Limited | Apparatus and method for cleaning substrate |
| JP4536711B2 (ja) * | 2006-12-25 | 2010-09-01 | 東京エレクトロン株式会社 | 基板処理装置 |
| KR20080109564A (ko) * | 2007-06-13 | 2008-12-17 | 주식회사 하이닉스반도체 | 포토마스크의 세정장치 및 이를 이용한 세정방법 |
| JP2010161350A (ja) * | 2008-12-09 | 2010-07-22 | Hitachi Kokusai Electric Inc | 基板処理方法 |
| US9299581B2 (en) * | 2011-05-12 | 2016-03-29 | Applied Materials, Inc. | Methods of dry stripping boron-carbon films |
| US9735026B2 (en) * | 2012-11-27 | 2017-08-15 | Tokyo Electron Limited | Controlling cleaning of a layer on a substrate using nozzles |
| US8764905B1 (en) | 2013-03-14 | 2014-07-01 | Intel Corporation | Cleaning organic residues from EUV optics and masks |
| WO2015070168A1 (en) * | 2013-11-11 | 2015-05-14 | Tokyo Electron Limited | Method and hardware for enhanced removal of post etch polymer and hardmask removal |
| US9514954B2 (en) | 2014-06-10 | 2016-12-06 | Lam Research Corporation | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films |
-
2017
- 2017-03-08 US US15/452,832 patent/US10490399B2/en active Active
- 2017-03-09 JP JP2017044944A patent/JP6948808B2/ja active Active
- 2017-03-09 TW TW106107706A patent/TWI774662B/zh active
- 2017-03-09 KR KR1020170030064A patent/KR102362672B1/ko active Active
- 2017-03-09 CN CN201710137464.0A patent/CN107180774B/zh active Active
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