JP2017157560A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP2017157560A JP2017157560A JP2017038127A JP2017038127A JP2017157560A JP 2017157560 A JP2017157560 A JP 2017157560A JP 2017038127 A JP2017038127 A JP 2017038127A JP 2017038127 A JP2017038127 A JP 2017038127A JP 2017157560 A JP2017157560 A JP 2017157560A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- electrode structure
- plasma
- substrate
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 28
- 238000004804 winding Methods 0.000 claims abstract description 15
- 239000007769 metal material Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 26
- 238000009832 plasma treatment Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 2
- 239000012809 cooling fluid Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims description 2
- 230000007246 mechanism Effects 0.000 claims description 2
- 208000037998 chronic venous disease Diseases 0.000 claims 3
- 239000000463 material Substances 0.000 abstract description 3
- 150000003254 radicals Chemical class 0.000 description 15
- 239000007789 gas Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- -1 fluorine radicals Chemical class 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
1つ又は複数の壁部を具備しているチャンバーであって、チャンバーの壁部の一部が電極構造体であり、電極構造体が、金属材料から形成されておりそして誘導結合プラズマ源の一次巻線として作用するように構成されている、チャンバー;及び
誘導結合プラズマ源の一次巻線として電極構造体を作動させる電気信号を供給して、誘導結合プラズマをチャンバーの内部で保持する、電気信号供給デバイス
を具備している、基材をプラズマ処理するためのプラズマ処理装置を提供する。
本発明の第一の側面に係る装置を提供する工程;及び
電気信号を電極構造体に供給して、電極構造体を誘導結合プラズマ源の一次巻線として作動させ、それによって、チャンバーの内部で誘導結合プラズマを保持して、プラズマ処理を行うために用いる工程
を含む、基材をプラズマ処理するための方法を提供する。
Claims (31)
- 1つ又は複数の壁部を具備しているチャンバーであって、前記チャンバーの前記壁部の一部が電極構造体であり、前記電極構造体が、金属材料から形成されておりそして誘導結合プラズマ源の一次巻線として作用するように構成されている、チャンバー;及び
誘導結合プラズマ源の一次巻線として前記電極構造体を作動させる電気信号を供給して、誘導結合プラズマを前記チャンバーの内部で保持する、電気信号供給デバイス
を具備している、基材をプラズマ処理するためのプラズマ処理装置。 - 前記電極構造体が、一巻き構造である、請求項1に記載の装置。
- 前記電極構造体が、前記チャンバーの周囲に一巻きを形成している単一の非連続的なバンドである、請求項2に記載の装置。
- 前記電極構造体が、前記チャンバーの周囲に一巻きを形成している、複数の離間しているバンドセグメントを具備している、請求項2に記載の装置。
- 前記バンドセグメントが、誘電体から形成されているチャンバー壁部の部分によって離間している、請求項4に記載の装置。
- 前記バンドセグメントが、前記電気信号供給デバイスと並列に接続されている、請求項4又は5に記載の装置。
- 前記バンドセグメントが、それらの中央部でアースしている、請求項4〜6のいずれか一項に記載の装置。
- 前記基材支持体に近接している前記電極構造体の下部領域が、前記下部領域中に一次電流の流路が形成されることを防止する1つ又は複数の不連続部を具備している、請求項1〜7のいずれか一項に記載の装置。
- 前記不連続部が、前記電極構造体に形成されているスロットである、請求項8に記載の装置。
- 前記電極構造体における各々のバンドセグメントの前記下部領域が、不連続部を具備している、請求項4〜7のいずれか一項に従属するときの請求項8又は9に記載の装置。
- 前記金属材料が金属である、請求項1〜10のいずれか一項に記載の装置。
- 前記電極構造体が、前記チャンバーの内側に直接連通している、請求項1〜11のいずれか一項に記載の装置。
- 前記電極構造体が、少なくとも1つのチャンバー壁部を通じて、前記チャンバー壁部の外表面から内表面まで延在している、請求項12に記載の装置。
- 前記チャンバーの内部に位置している基材支持体を更に具備している、請求項1〜13のいずれか一項に記載の装置。
- 前記基材支持体上に前記基材を装填するための装填機構を更に具備している、請求項14に記載の装置。
- 前記電極構造体により構成されていない1つ又は複数の前記チャンバー壁部の残りの部分が、1つ又は複数の誘電体から形成されている、請求項1〜15のいずれか一項に記載の装置。
- 前記電極構造体を冷却するための冷却システムを具備している、請求項1〜16のいずれか一項に記載の装置。
- 前記冷却システムが、前記電極構造体中に形成されている流路を具備し、冷却流体が前記流路を通って流れることを可能としている、請求項17に記載の装置。
- 前記電極構造体を有する単一のチャンバーを具備している、請求項1〜18のいずれか一項に記載の装置。
- プラズマ源として作用する前記電極構造体を有する第一のチャンバー、及び内部でプラズマ処理を行う1つ又は複数の更なるチャンバーを具備している、請求項1〜18のいずれか一項に記載の装置。
- 前記第一のチャンバーが、ラジカルの源として作用し、そして前記プラズマ処理が、ラジカルに基づくプラズマ処理である、請求項20に記載の装置。
- 前記電気信号供給デバイスが、前記電極構造体を作動させるRF電気信号を供給する、請求項1〜21のいずれか一項に記載の装置。
- 請求項1に記載の装置を提供する工程;及び
電気信号を前記電極構造体に供給して、前記電極構造体を誘導結合プラズマ源の一次巻線として作動させ、それによって、チャンバーの内部で誘導結合プラズマを保持して、前記プラズマ処理を行うために用いる工程
を含む、基材をプラズマ処理する方法。 - 前記プラズマ処理を行って、前記装置の内部に配置されている基材を処理する、請求項23に記載の方法。
- 前記基材が、半導体基材又はフラットパネルである、請求項24に記載の方法。
- 前記プラズマ処理が、半導体処理技術である、請求項23〜25のいずれか一項に記載の方法。
- 前記プラズマ処理が、チャンバー洗浄処理である、請求項23に記載の方法。
- 前記装置が、プラズマ源として作用する前記電極構造体を有する第一のチャンバー、及び内部でプラズマ処理を行う1つ又は複数の更なるチャンバーを具備している、請求項23〜27のいずれか一項に記載の方法。
- 前記第一のチャンバーが、前記プラズマ処理のために用いるラジカルの源である、請求項28に記載の方法。
- 前記プラズマ処理が、CVD処理である、請求項29に記載の方法。
- 前記CVD処理が、CVDエピタキシーである、請求項30に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1603581.8A GB201603581D0 (en) | 2016-03-01 | 2016-03-01 | Plasma processing apparatus |
GB1603581.8 | 2016-03-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017157560A true JP2017157560A (ja) | 2017-09-07 |
JP6807777B2 JP6807777B2 (ja) | 2021-01-06 |
Family
ID=55807153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017038127A Active JP6807777B2 (ja) | 2016-03-01 | 2017-03-01 | プラズマ処理装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10446374B2 (ja) |
EP (1) | EP3214637B1 (ja) |
JP (1) | JP6807777B2 (ja) |
KR (1) | KR20170102438A (ja) |
CN (1) | CN107146754B (ja) |
GB (1) | GB201603581D0 (ja) |
TW (1) | TWI784944B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201813467D0 (en) * | 2018-08-17 | 2018-10-03 | Spts Technologies Ltd | Method of depositing silicon nitride |
GB201813451D0 (en) | 2018-08-17 | 2018-10-03 | Spts Technologies Ltd | Plasma apparatus |
EP4064324A4 (en) * | 2020-02-19 | 2023-12-06 | En2Core Technology, Inc | ANTENNA STRUCTURE AND PLASMA GENERATING DEVICE THEREFROM |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05171470A (ja) * | 1990-07-17 | 1993-07-09 | Balzers Ag | エッチングあるいはコーティング装置 |
JPH09120957A (ja) * | 1995-08-23 | 1997-05-06 | Fujitsu Ltd | プラズマ装置及びプラズマ処理方法 |
JP2003502822A (ja) * | 1999-06-18 | 2003-01-21 | アプライド マテリアルズ インコーポレイテッド | ヘリコン波を発生することができる誘導性アンテナを内部に有するプラズマリアクター |
JP2006524422A (ja) * | 2003-04-17 | 2006-10-26 | プラズマ コントロール システムズ,エルエルシー | プラズマ発生装置、方法、および調整可能デューティサイクルを有するrf駆動回路 |
WO2009142016A1 (ja) * | 2008-05-22 | 2009-11-26 | 株式会社イー・エム・ディー | プラズマ生成装置およびプラズマ処理装置 |
JP2010098174A (ja) * | 2008-10-17 | 2010-04-30 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2013191593A (ja) * | 2012-03-12 | 2013-09-26 | Tokyo Electron Ltd | プラズマ処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4018070A1 (de) | 1990-06-06 | 1991-12-12 | Bayer Ag | Morpholinoharnstoff-derivate |
US6077384A (en) | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
US5589737A (en) | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
US5710486A (en) * | 1995-05-08 | 1998-01-20 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
DE10147998A1 (de) * | 2001-09-28 | 2003-04-10 | Unaxis Balzers Ag | Verfahren und Vorrichtung zur Erzeugung eines Plasmas |
US20120160806A1 (en) | 2009-08-21 | 2012-06-28 | Godyak Valery A | Inductive plasma source |
KR101711687B1 (ko) * | 2009-09-28 | 2017-03-02 | 램 리써치 코포레이션 | 일체형 한정 링 배열 및 그 방법 |
JP2013254723A (ja) * | 2012-05-11 | 2013-12-19 | Hitachi High-Technologies Corp | プラズマ処理装置 |
US20140053984A1 (en) * | 2012-08-27 | 2014-02-27 | Hyun Ho Doh | Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system |
JP6001963B2 (ja) | 2012-08-31 | 2016-10-05 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ生成装置、アンテナ構造体及びプラズマ生成方法 |
US20140141619A1 (en) * | 2012-11-19 | 2014-05-22 | Tokyo Electron Limited | Capacitively coupled plasma equipment with uniform plasma density |
US9607819B1 (en) * | 2016-02-03 | 2017-03-28 | The Charles Stark Draper Laboratory Inc. | Non-radioactive, capacitive discharge plasma ion source and method |
-
2016
- 2016-03-01 GB GBGB1603581.8A patent/GB201603581D0/en not_active Ceased
-
2017
- 2017-02-28 KR KR1020170026297A patent/KR20170102438A/ko not_active Application Discontinuation
- 2017-03-01 US US15/446,052 patent/US10446374B2/en active Active
- 2017-03-01 TW TW106106625A patent/TWI784944B/zh active
- 2017-03-01 JP JP2017038127A patent/JP6807777B2/ja active Active
- 2017-03-01 EP EP17158675.3A patent/EP3214637B1/en active Active
- 2017-03-01 CN CN201710116676.0A patent/CN107146754B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05171470A (ja) * | 1990-07-17 | 1993-07-09 | Balzers Ag | エッチングあるいはコーティング装置 |
JPH09120957A (ja) * | 1995-08-23 | 1997-05-06 | Fujitsu Ltd | プラズマ装置及びプラズマ処理方法 |
JP2003502822A (ja) * | 1999-06-18 | 2003-01-21 | アプライド マテリアルズ インコーポレイテッド | ヘリコン波を発生することができる誘導性アンテナを内部に有するプラズマリアクター |
JP2006524422A (ja) * | 2003-04-17 | 2006-10-26 | プラズマ コントロール システムズ,エルエルシー | プラズマ発生装置、方法、および調整可能デューティサイクルを有するrf駆動回路 |
WO2009142016A1 (ja) * | 2008-05-22 | 2009-11-26 | 株式会社イー・エム・ディー | プラズマ生成装置およびプラズマ処理装置 |
JP2010098174A (ja) * | 2008-10-17 | 2010-04-30 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2013191593A (ja) * | 2012-03-12 | 2013-09-26 | Tokyo Electron Ltd | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
EP3214637B1 (en) | 2020-09-23 |
TWI784944B (zh) | 2022-12-01 |
GB201603581D0 (en) | 2016-04-13 |
EP3214637A1 (en) | 2017-09-06 |
US10446374B2 (en) | 2019-10-15 |
CN107146754B (zh) | 2020-08-07 |
CN107146754A (zh) | 2017-09-08 |
TW201742678A (zh) | 2017-12-16 |
JP6807777B2 (ja) | 2021-01-06 |
KR20170102438A (ko) | 2017-09-11 |
US20170256384A1 (en) | 2017-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11728139B2 (en) | Process chamber for cyclic and selective material removal and etching | |
KR102539151B1 (ko) | 기판 처리 방법 | |
TWI431683B (zh) | Plasma processing device and plasma processing method | |
US9767996B2 (en) | Application of powered electrostatic faraday shield to recondition dielectric window in ICP plasmas | |
US6239553B1 (en) | RF plasma source for material processing | |
US6320320B1 (en) | Method and apparatus for producing uniform process rates | |
KR101094124B1 (ko) | 균일한 프로세스 레이트를 발생시키는 안테나 | |
KR100841118B1 (ko) | 플라즈마 처리 장치 및 플라즈마 처리 방법 | |
TWI502619B (zh) | 用於電漿處理設備之電極、電漿處理設備、以及使用電漿處理設備產生電漿的方法 | |
JP2016143890A5 (ja) | ||
JP2016143890A (ja) | 自己配列されたパターニング集積化スキームにおけるパターン密度を増加させるための方法 | |
KR101929675B1 (ko) | 플라즈마 처리 장치 | |
JP2019216140A (ja) | 成膜装置及び成膜装置におけるクリーニング方法 | |
KR101957348B1 (ko) | 플라즈마 처리 장치 및 플라즈마 처리 방법 | |
JPH05206072A (ja) | 誘導rf結合を用いたプラズマ加工装置とその方法 | |
KR0170387B1 (ko) | 고주파 반도체 웨이퍼 가공장치 및 방법 | |
JP6807777B2 (ja) | プラズマ処理装置 | |
KR102278074B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
US20180047542A1 (en) | Inductively coupled plasma chamber having a multi-zone showerhead | |
WO2019230526A1 (ja) | 成膜装置及び成膜方法 | |
KR20110022952A (ko) | 기판 처리 장치 | |
KR100855880B1 (ko) | 기판 처리 장치 및 플라즈마 밀도의 제어 방법 | |
TWI775166B (zh) | 等離子體處理裝置及其處理基片的方法 | |
JP2007266536A (ja) | プラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20200109 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20200116 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200302 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6807777 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |