JP2017134902A - 被覆導電性粒子、回路接続材料及び接続構造体 - Google Patents
被覆導電性粒子、回路接続材料及び接続構造体 Download PDFInfo
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
【解決手段】導電性粒子と、導電性粒子の表面の少なくとも一部を被覆する有機金属錯体と、を備える被覆導電性粒子。
【選択図】図1
Description
[一般式(1)、(2)中、Mは金属イオンを表し、L1、L2、L3及びL4は、それぞれ独立に、アルコキシ陰イオン、β−ジケトンの共役陰イオン又はβ−ケトエステルの共役陰イオンを表す。]
本実施形態に係る被覆導電性粒子は、導電性粒子と、導電性粒子の表面の少なくとも一部を被覆する有機金属錯体と、を備える。
本実施形態に係る回路接続材料は、少なくとも上述の被覆導電性粒子を含有する。図1は、回路接続材料の一実施形態を示す模式断面図である。図1に示すように、回路接続材料1は、例えば、接着剤成分2中に上述の被覆導電性粒子3が分散されてなるフィルム(フィルム状導電性接着剤)であってよい。
[一般式(4)、(5)、(6)中、R1及びX−は、それぞれ一般式(3)におけるR1及びX−と同一の定義内容を示す。]
(測定条件)
装置:東ソー株式会社製 GPC−8020
検出器:東ソー株式会社製 RI−8020
カラム:日立化成株式会社製 Gelpack GL−A−160−S+GL−A150
試料濃度:120mg/3mL
溶媒:テトラヒドロフラン
注入量:60μL
圧力:2.9MPa(30kgf/cm2)
流量:1.00mL/min
図2は、接続構造体の一実施形態を示す模式断面図である。図2に示すように、接続構造体10は、相互に対向する第一の回路部材20及び第二の回路部材30を備えており、第一の回路部材20と第二の回路部材30との間には、これらを接続する回路接続部材40が設けられている。
次に、上述した接続構造体10の製造方法について説明する。
次に、本実施形態に係る半導体装置について説明する。図4は、半導体装置の一実施形態を示す模式断面図である。図4に示すように、半導体装置50は、半導体素子51と、半導体素子の支持部材となる基板52とを備えており、半導体素子51と基板52との間には、これらを電気的に接続する半導体素子接続部材53が設けられている。半導体素子接続部材53は基板52の主面52a上に積層され、半導体素子51は更にその半導体素子接続部材53上に積層されている。
ポリスチレンを核とする粒子の表面に、厚み0.2μmのニッケル層を設け、このニッケル層の外側に、厚み0.02μmの金層を設けた。これにより、平均粒径3μm、比重2.5の導電性粒子Xが得られた。
(実施例1)
被覆導電性粒子として製造例1で作製した被覆導電性粒子Aを、カチオン重合物質としてビスフェノールA型エポキシ樹脂(商品名:jER828、三菱化学(株)製)を、スルホニウム塩型カチオン発生剤としてα−ナフチルメチル−4−ヒドロキシフェニルメチルスルホニウムヘキサフルオロアンチモネートを、フィルム形成材としてフェノキシ樹脂(商品名:YP−70、新日鉄住金化学(株)製)を、シランカップリング剤としてγ−グリシドキシトリメトキシシラン(商品名:KBM−403、信越化学(株)製)をそれぞれ用いた。表2に示した混合比(質量比)となるよう各成分を配合して接着剤組成物を調製し、厚み50μmのPET樹脂フィルム上に塗工装置を用いて接着剤組成物を塗布し、70℃で5分間の熱風乾燥によって接着剤層の厚みが20μmである接着フィルム(回路接続材料)を得た。
被覆導電性粒子として、被覆導電性粒子Aの代わりに製造例2で作製した被覆導電性粒子Bを用いたこと以外は、実施例1と同様にして回路接続材料を得た。
被覆導電性粒子として、被覆導電性粒子Aの代わりに製造例3で作製した被覆導電性粒子Cを用いたこと以外は、実施例1と同様にして回路接続材料を得た。
被覆導電性粒子として、被覆導電性粒子Aの代わりに製造例4で作製した被覆導電性粒子Dを用いたこと以外は、実施例1と同様にして回路接続材料を得た。
被覆導電性粒子として、被覆導電性粒子Aの代わりに製造例5で作製した被覆導電性粒子Eを用いたこと以外は、実施例1と同様にして回路接続材料を得た。
被覆導電性粒子Aの代わりに導電性粒子X(被覆処理のない導電性粒子)を用いたこと以外は、実施例1と同様にして回路接続材料を得た。
実施例1〜5及び比較例1の回路接続材料について、示差走査熱量測定を実施した結果を表3に示す。測定は、示差走査熱量測定装置(製品名:DSC Pyris、(株)パーキンエルマージャパン製)を用いて、窒素雰囲気下(20mL/分)、昇温速度5℃/分の条件で行った。この測定を、作製した直後(「初期」という)の回路接続材料と、40℃にて24時間保管した後(「24時間保存後」という)の回路接続材料について行った。初期に対する24時間保存後の発熱量の減少量(発熱量減少率)も併せて表3に示す。
ガラス基板(コーニング#1737、外形38mm×28mm、厚さ0.5mm、表面にITO(酸化インジウム錫)配線パターン(パターン幅50μm、ピッチ50μm)を有するもの)に、PET樹脂フィルムから実施例1〜5及び比較例1の各回路接続材料を2×20mmの大きさで転写した。ICチップ(外形1.7mm×17.2mm、厚さ0.55mm、バンプの大きさ50μm×50μm、バンプのピッチ50μm)を、160℃5秒間及び150℃5秒間のそれぞれの接続条件で、80MPa(バンプ面積換算)の荷重をかけて加熱・加圧して実装した。また、24時間保存後の回路接続材料についても同様に実装した。
上記のようにして作製した接続構造体の隣接回路間の抵抗値(14端子測定した中の最大値)を評価した。得られた結果を表4に示す。
Claims (5)
- 導電性粒子と、前記導電性粒子の表面の少なくとも一部を被覆する有機金属錯体と、を備える被覆導電性粒子。
- 前記有機金属錯体を構成する金属が、アルミニウム、チタン及びジルコニウムからなる群から選ばれる少なくとも一種である、請求項1又は2に記載の被覆導電性粒子。
- カチオン重合性化合物と、カチオン発生剤と、請求項1〜3のいずれか一項に記載の被覆導電性粒子と、を含有する回路接続材料。
- 第一の基板上に第一の回路電極が形成されてなる第一の回路部材と、
第二の基板上に第二の回路電極が形成されてなり、前記第一の回路電極と前記第二の回路電極とが互いに対向するように配置された第二の回路部材と、
前記第一の回路部材と前記第二の回路部材との間に設けられ、前記第一の回路電極と前記第二の回路電極とを互いに電気的に接続するように、前記第一の回路部材と第二の回路部材とを互いに接続する回路接続部材と、を備え、
前記回路接続部材が請求項4に記載の回路接続材料の硬化物からなる、接続構造体。
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KR20230011946A (ko) | 2020-05-20 | 2023-01-25 | 니폰 가가쿠 고교 가부시키가이샤 | 도전성 입자, 그것을 사용한 도전성 재료 및 접속 구조체 |
WO2023054559A1 (ja) * | 2021-09-30 | 2023-04-06 | 積水化学工業株式会社 | 硬化性樹脂組成物、コーティング層、及び、フィルム |
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JPH03237107A (ja) * | 1990-02-14 | 1991-10-23 | Sanshin Chem Ind Co Ltd | カチオン重合開始剤および重合性組成物 |
JPH1021741A (ja) * | 1996-07-03 | 1998-01-23 | Asahi Chem Ind Co Ltd | 異方導電性組成物及びフィルム |
JP2013028726A (ja) * | 2011-07-28 | 2013-02-07 | Sekisui Chem Co Ltd | 異方性導電材料及び接続構造体 |
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JPH03237107A (ja) * | 1990-02-14 | 1991-10-23 | Sanshin Chem Ind Co Ltd | カチオン重合開始剤および重合性組成物 |
JPH1021741A (ja) * | 1996-07-03 | 1998-01-23 | Asahi Chem Ind Co Ltd | 異方導電性組成物及びフィルム |
JP2013028726A (ja) * | 2011-07-28 | 2013-02-07 | Sekisui Chem Co Ltd | 異方性導電材料及び接続構造体 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20230011946A (ko) | 2020-05-20 | 2023-01-25 | 니폰 가가쿠 고교 가부시키가이샤 | 도전성 입자, 그것을 사용한 도전성 재료 및 접속 구조체 |
WO2023054559A1 (ja) * | 2021-09-30 | 2023-04-06 | 積水化学工業株式会社 | 硬化性樹脂組成物、コーティング層、及び、フィルム |
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