JP2017096719A - Temperature sensor and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature sensor that is free from a poor continuity even though electrodes are thin, and a method of manufacturing the same.SOLUTION: A temperature sensor comprises an insulation film 2, a thin film thermistor section 3 made of a thermistor material and formed on the insulation film, a pair of counter electrodes 4 patterned on the thin film thermistor section to face each other, and a pair of connection electrodes 5 patterned on the thin film thermistor section and connected to the pair of counter electrodes. The thin thermistor section is formed to cover at least entire bottom surfaces of the connection electrodes.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a temperature sensor with high productivity and high reliability and a method for manufacturing the same.

  In recent years, development of a film type thermistor sensor in which a thermistor material is formed on a resin film has been studied, and development of a thermistor material that can be directly formed on a film is desired. That is, it is expected that a flexible thermistor sensor can be obtained by using a film. Furthermore, although development of a very thin thermistor sensor having a thickness of about 0.1 mm is desired, conventionally, a substrate material using ceramics such as alumina is often used. When thinned, there were problems such as being very brittle and fragile, but it is expected that a very thin thermistor sensor can be obtained by using a film.

In particular, as a thermistor material that can be directly formed on a film without firing, it is a metal nitride material used in the thermistors described in Patent Documents 1 and 2, and has the general formula: Ti _x Al _y N _z (0.70 ≦ y /(X+y)≦0.95, 0.4 ≦ z ≦ 0.5, x + y + z = 1), and a thermistor whose crystal structure is a single phase of a hexagonal wurtzite type Metal nitride materials have been developed.

  As shown in FIG. 8, a temperature sensor using a thin film thermistor such as a metal nitride material for the thermistor has a thin film thermistor portion 103 formed on the insulating film 2, and the thin film thermistor portion 103 is formed on the thin film thermistor portion 103. A pair of counter electrodes 104 which are comb-shaped electrodes arranged to face each other, and a pair of connection electrodes 105 connected to the pair of counter electrodes 104 and patterned on the insulating film 2 are provided.

JP 2013-179161 A JP 2013-211144 A

The following problems remain in the conventional technology.
As shown in FIG. 8A, the connection electrode 105 connected to the counter electrode 104 extends from the insulating film 2 to the thin film thermistor portion 103, so that a step is formed at the edge of the thin film thermistor portion 103. Part 105a is produced. In this case, the electrode film thickness tends to be thin at the stepped portion 105a, and if it is too thin, there is a risk of poor conduction. In particular, as shown in FIG. 8B, when the thin film thermistor portion 103 is thickened for resistance adjustment, or when the connecting electrode 105 is thinned for cost reduction, the stepped portion 105a causes poor conduction. There was the inconvenience that it became easy.
In addition, when the connection electrode 105 is directly formed on the insulating film 2, the adhesion may be weakened by a heat test or the like.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a temperature sensor capable of preventing poor conduction even with a thin electrode and a manufacturing method thereof.

  The present invention employs the following configuration in order to solve the above problems. That is, the temperature sensor according to the first invention includes an insulating film, a thin film thermistor portion formed of the thermistor material on the insulating film, and a pair of patterns formed opposite to each other on the thin film thermistor portion. A counter electrode and a pair of connection electrodes patterned on the thin film thermistor portion and connected to the pair of counter electrodes, and the thin film thermistor portion is formed at least on the entire lower surface of the connection electrode. It is characterized by.

  In the temperature sensor of the present invention, since the thin film thermistor portion is formed at least on the entire lower surface of the connection electrode, the connection electrode can be flattened without causing a step portion, thereby preventing conduction failure. Therefore, even when the thin film thermistor portion is set thick, the connection electrode is set thin, or both are set, the occurrence of poor conduction can be prevented. In addition, since the connection electrode is not directly formed on the insulating film, but formed on the thin film thermistor, it suppresses the decrease in adhesiveness even in heat resistance tests compared to the case where it is formed on the insulating film. can do.

A temperature sensor according to a second invention is the temperature sensor according to the first invention, wherein one end sides of the pair of connection electrodes are connected to the pair of counter electrodes and the other end sides extend in parallel to each other, and the thin film thermistor The portion is not formed to be connected in an opposing direction between at least the other end sides of the pair of connection electrodes.
That is, in this temperature sensor, since the thin film thermistor portion is not formed in the opposing direction between at least the other end sides of the pair of connection electrodes, the thin film thermistor portion is interposed between the other ends of the pair of connection electrodes. Since the resistance of the thin film thermistor portion can be measured only between the pair of counter electrodes without conducting, the temperature can be measured with high accuracy.

A method for manufacturing a temperature sensor according to a third invention is a method for manufacturing the temperature sensor according to the first or second invention, wherein a thermistor material is formed on the insulating film by sputtering using a thermistor sputtering target. Forming a thermistor layer by forming a film, forming an electrode layer by sputtering an electrode material on the thermistor layer using an electrode sputtering target, and forming the electrode layer An electrode patterning step of patterning and forming the electrode layer after the step to form the counter electrode and the connection electrode, and a thermistor patterning step of patterning and forming the thermistor layer to form the thin film thermistor portion after the electrode patterning step. It is characterized by having.
That is, in this temperature sensor manufacturing method, since the patterning is performed after the thermistor layer forming step and the electrode layer forming step, it is not necessary to perform the patterning step between the respective sputterings, thereby improving productivity. it can.

According to a fourth aspect of the present invention, there is provided the temperature sensor manufacturing method according to the third aspect, wherein the thermistor layer forming step and the electrode layer forming step are performed by winding the long, strip-shaped insulating film into a roll shape. A film conveying step of winding the insulating film fed from the unwinding roll with a winding roll that is driven to rotate, and the insulating property being arranged between the unwinding roll and the winding roll and being unwound from the unwinding roll A supporting step of supporting the film on the outer peripheral surface of a rotatable film-forming roll, and in the thermistor layer forming step, using a thermistor sputtering target disposed opposite to the outer peripheral surface for supporting the insulating film. The thermistor layer is formed by sputtering the thermistor material on the opposing insulating film. In the electrode layer forming step, the electrode material is formed on the facing thermistor layer by using an electrode sputtering target disposed facing the outer peripheral surface that supports the insulating film on which the thermistor layer is formed. The electrode layer is formed by film formation by sputtering.
That is, in this temperature sensor manufacturing method, a so-called roll-to-roll method is employed, so that film formation can be performed continuously or intermittently while conveying a long insulating film.

According to a fifth aspect of the present invention, there is provided the temperature sensor manufacturing method according to the fourth aspect, wherein the thermistor sputtering target is directed to the traveling direction of the insulating film supported on the outer peripheral surface of the same film-forming roll, These are arranged in order of the sputtering target for electrodes, and the thermistor layer forming step and the electrode layer forming step are continuously performed on the same film forming roll.
That is, in this temperature sensor manufacturing method, the thermistor layer forming step and the electrode layer forming step are continuously performed on the same film forming roll, so that the thermistor layer and the electrode layer are continuously formed on the same film forming roll. Film formation and lamination, and high productivity can be obtained.

The present invention has the following effects.
That is, according to the temperature sensor of the present invention, since the thin film thermistor portion is formed at least on the entire lower surface of the connection electrode, the connection electrode can be flattened without a stepped portion, thereby preventing conduction failure. A decrease in adhesion of the connection electrode can be suppressed by a heat test or the like.
Further, according to the temperature sensor manufacturing method of the present invention, the patterning is performed after the thermistor layer forming step and the electrode layer forming step, so that it is not necessary to perform the patterning step during each sputtering, and the productivity is increased. Can be improved. In particular, by adopting a so-called roll-to-roll method, film formation can be performed continuously or intermittently while conveying a long insulating film, and high mass productivity is obtained.

In 1st Embodiment of the temperature sensor which concerns on this invention, and its manufacturing method, it is the top view (a) which shows a temperature sensor, and the top view (b) which shows the state except a counter electrode and a connection electrode. It is the sectional view on the AA line of FIG. In 1st Embodiment, it is a front view which shows the manufacturing apparatus at the time of performing a thermistor layer formation process. In 1st Embodiment, it is a front view which shows the manufacturing apparatus at the time of performing an electrode layer formation process. In 2nd Embodiment of the temperature sensor which concerns on this invention, and its manufacturing method, it is the top view (a) which shows a temperature sensor, and the top view (b) which shows the state except a counter electrode and a connection electrode. In 3rd Embodiment of the temperature sensor which concerns on this invention, and its manufacturing method, it is a top view (a) which shows a temperature sensor, and a top view (b) which shows the state except a counter electrode and a connection electrode. In 4th Embodiment of the temperature sensor which concerns on this invention, and its manufacturing method, it is a front view which shows the manufacturing apparatus at the time of performing a thermistor layer formation process and an electrode layer formation process. In the conventional example of the temperature sensor which concerns on this invention, and its manufacturing method, it is sectional drawing (a) which shows a temperature sensor when a thin film thermistor part is thin, and sectional drawing (b) which shows a temperature sensor when a thin film thermistor part is thick .

  Hereinafter, a first embodiment of a temperature sensor and a manufacturing method thereof according to the present invention will be described with reference to FIGS. In each drawing used for the following description, the scale is appropriately changed in order to make each member recognizable or easily recognizable.

  As shown in FIGS. 1 and 2, the temperature sensor 1 of the present embodiment includes an insulating film 2, a thin film thermistor portion 3 formed of a thermistor material on the insulating film 2, and a thin film thermistor portion 3. A pair of counter electrodes 4 patterned in opposition and a pair of connection electrodes 5 patterned on the thin film thermistor portion 3 and connected to the pair of counter electrodes 4 are provided.

  The thin film thermistor portion 3 is formed at least on the entire lower surface of the connection electrode 5. In this embodiment, as shown in FIG. 1B, the thin film thermistor portion 3 is formed on almost the entire surface of the insulating film 2, and the length of the insulating film 2 is increased as shown in FIG. The entire counter electrode 4 extending along the side is formed on the thin film thermistor portion 3.

The said insulating film 2 is formed in the rectangular shape or strip | belt shape, for example with the polyimide resin sheet of thickness 7.5-125 micrometers. In addition, as the insulating film 2, PET: polyethylene terephthalate, PEN: polyethylene naphthalate, or the like may be used.
The thin film thermistor portion 3 is, for example, a metal nitride film for a thermistor, and is a TiAlN film. In particular, the metal nitride film for the thermistor produced in the present embodiment has a general formula: Ti _x Al _y N _z (0.70 ≦ y / (x + y) ≦ 0.95, 0.4 ≦ z ≦ 0.5, x + y + z = 1), and its crystal structure is a single phase of a hexagonal wurtzite type.

The counter electrode 4 and the connection electrode 5 have, for example, a Cr or NiCr bonding layer having a thickness of 5 to 100 nm and an outermost layer formed of a noble metal such as Au on the bonding layer with a thickness of 50 to 1000 nm. ing.
The pair of counter electrodes 4 has a comb pattern in which comb portions are arranged alternately and arranged in opposition to each other.

The pair of counter electrodes 4 is disposed on one end side of the insulating film 2.
One end side of the pair of connection electrodes 5 is connected to the pair of counter electrodes 4, and the other end side extends in parallel to each other and extends to the other end side of the insulating film 2. Note that a pad portion to which a lead frame, a lead wire and the like are connected is formed at the other end of the pair of connection electrodes 5.

An insulating protective film that covers the connection electrode 5, the counter electrode 4, and the thin film thermistor portion 3 excluding the pad portion may be formed on the insulating film 2, and further with a pair of insulating protective tapes. The temperature sensors 1 may be bonded to each other with the top and bottom interposed therebetween.
The protective film is an insulating resin film or the like, and for example, a polyimide film having a thickness of 20 μm is employed.
For example, a fluorocarbon resin film such as Teflon (registered trademark) is used as the protective tape.

  As shown in FIG. 3, the manufacturing method of the temperature sensor 1 of the present embodiment is thermistor layer formation in which a thermistor layer is formed by sputtering a thermistor material on the insulating film 2 using a sputtering target 16A for thermistor. Steps and electrode layers for forming electrode layers (joining layer 5a and outermost layer 5b) by sputtering an electrode material on the thermistor layer 3a using sputtering targets 16B and 16C for electrodes as shown in FIG. A thin film thermistor portion 3 is formed by patterning and forming the thermistor layer 3a after the forming step, the electrode patterning step of forming the counter electrode 4 and the connection electrode 5 by patterning and forming the electrode layer after the electrode layer forming step, and the electrode patterning step. A thermistor patterning step.

  Further, in the manufacturing method of the present embodiment, the thermistor layer forming step and the electrode layer forming step include the step of forming the insulating film 2 fed out from the unwinding roll 14a in which the long and strip-like insulating film 2 is wound in a roll shape. A film transporting process for winding with a winding roll 14b that is driven to rotate, and a film forming roll 15 that can rotate the insulating film 2 that is arranged between the winding roll 14a and the winding roll 14b and that is fed from the winding roll 14a. And a supporting step for supporting the outer peripheral surface 15a.

In the thermistor layer forming step, as shown in FIG. 3, the thermistor material is sputtered onto the opposing insulating film 2 using the thermistor sputtering target 16A disposed opposite to the outer peripheral surface 15a that supports the insulating film 2. To form the thermistor layer 3a.
Further, in the electrode layer forming step, as shown in FIG. 4, electrode sputtering targets 16 </ b> B and 16 </ b> C disposed opposite to the outer peripheral surface 15 a that supports the insulating film 2 on which the thermistor layer 3 a is formed, An electrode material is formed on the opposing thermistor layer 3a by sputtering to form electrode layers (bonding layer 5a and outermost layer 5b).

  As shown in FIG. 3, the manufacturing apparatus used for this manufacturing method has a roll-out insulating film 2 that is wound in a roll shape and a roll-out roll 14a that is wound in a roll shape, and an insulation that is fed out from the roll-out roll 14a. Between a film transport mechanism 14 having a rotatable winding roll 14b for winding the conductive film 2 and a drive source 14c for rotating the winding roll 14b, and an unwinding roll 14a and a winding roll 14b. And a rotatable film forming roll 15 that supports the insulating film 2 fed out from the unwinding roll 14a by the outer peripheral surface 15a.

  In this manufacturing apparatus, during the thermistor layer forming step, as shown in FIG. 3, the thermistor material is sputtered on the surface of the insulating film 2 on the outer peripheral surface 15a that is disposed opposite to the outer peripheral surface 5a that supports the insulating film 2. Thermistor sputtering target 16 </ b> A capable of film formation is provided. In addition, in the electrode layer forming step, the manufacturing apparatus has an outer peripheral surface 15a that supports the insulating film 2 on which the thermistor layer 3a is formed, instead of the thermistor sputtering target 16A, as shown in FIG. Two electrode sputtering targets 16B and 16C for the bonding layer 5a and the outermost layer 5b arranged opposite to each other are provided.

  The film transport mechanism 14 has a function of bringing the insulating film 2 to be transported into contact with the outer peripheral surface 15a of the film forming roll 15 so as to be in close contact therewith. That is, when the winding roll 14b is rotated by the drive source 14c and the insulating film 2 is conveyed, a certain tension is applied to the insulating film 2 between the winding roll 14a and the winding roll 14b. Then, the insulating film 2 is applied to the lower side of the outer peripheral surface of the film forming roll 15, and the insulating film 2 is pulled from above the film forming roll 15, thereby lowering the insulating film 2 to the lower side of the outer peripheral surface of the film forming roll 15. It is set to be pressed against. In the present embodiment, the unwinding roll 14a, the winding roll 14b, and the film forming roll 15 are arranged so that the insulating film 2 is in contact with at least about half of the outer peripheral surface 15a of the film forming roll 15. .

The drive source 14c is a motor or the like and rotates at least the take-up roll 14b. In this embodiment, the unwind roll 14a is also rotationally driven by another drive source 14c.
The film forming roll 15 has a pipe (not shown) through which a cooling / heating medium flows inside substantially the entire circumference of the outer peripheral surface 15a. In other words, the piping is disposed in the vicinity of the outer peripheral surface 15a along the outer peripheral surface 15a with a copper tube or the like, and the temperature of the film forming roll 15 is adjusted by circulating a cooling / heating medium in the piping. .
The film transport mechanism 14 and the film forming roll 15 are both installed together with a sputtering target in a vacuum chamber (not shown) of the sputtering apparatus.

  The vacuum chamber is provided with a gas inlet (not shown) for introducing a mixed gas of Ar gas + nitrogen gas. Further, a cathode electrode (not shown) is disposed on the back side of each sputtering target, and the film forming roll 15 is an anode electrode. That is, a voltage is applied between the sputtering target on the cathode electrode side and the film forming roll 15 serving as the anode electrode, and reactive sputtering film formation is performed on the surface of the insulating film 2 on the film forming roll 15.

A Ti—Al alloy sputtering target is used as the thermistor sputtering target 16A. That is, the thermistor layer 3 a is formed on the surface of the insulating film 2 by performing reactive sputtering in a nitrogen-containing atmosphere using a Ti—Al alloy sputtering target.
Moreover, it is preferable to set the sputtering gas pressure in the reactive sputtering to less than 0.67 Pa.

More specifically, for example, a thermistor layer 3a having a thickness of 200 nm is formed on the insulating film 2 of a polyimide film having a thickness of 50 μm by a reactive sputtering method. The sputtering conditions at that time are, for example, ultimate vacuum: 5 × 10 ⁻⁶ Pa, sputtering gas pressure: 0.4 Pa, target input power (power density): 2.5 W / cm ² , and a mixed gas of Ar gas + nitrogen gas In the atmosphere, the partial pressure of nitrogen gas is set to 20%.

  In this way, in the thermistor layer forming step, as shown in FIG. 3, the insulating film 2 is fed from the unwinding roll 14a to the winding roll 14b, and the film formation of the thermistor layer 3a is long in the middle film forming roll 15. This is performed over the entire length of the insulating film 2.

Next, the insulating film 2 with the thermistor layer 3a taken up by the take-up roll 14b is wound from the take-up roll 14b by rotating the unwind roll 14a and the take-up roll 14b in the reverse direction as shown in FIG. It sends out to the taking-out roll 14a, and the electrode layer formation process is performed in the film-forming roll 15 in the middle.
At this time, for example, a Cr target is used as the electrode sputtering target 16B for the bonding layer 5a, and an Au target is used as the electrode sputtering target 16C for the outermost layer 5b.

The electrode sputtering target 16B for the bonding layer 5a and the electrode sputtering target 16C for the outermost layer 5b are in this order with respect to the traveling direction of the insulating film 2 supported on the outer peripheral surface 15a of the film forming roll 15. They are arranged side by side, and are formed in the order of the bonding layer 5a and the outermost layer 5b. For example, a Cr film bonding layer 5a is formed to a thickness of 20 nm, and an Au film outermost layer 5b is formed on the bonding layer 5a to a thickness of 200 nm.
In this manufacturing method, the thermistor layer 3a and the bonding layer 5a and the outermost layer 5b are formed separately, so that the thermistor layer 3a and the bonding layer 5a and the outermost layer 5b are formed at the same rate. Suitable for large differences.

After each of the above sputtering, resist is applied, exposed using a mask having a desired pattern shape, and after development, unnecessary electrode portions are wet-etched in the order of commercially available Au etchant and Cr etchant, and the resist is peeled off. As shown in FIG. 1A, desired counter electrodes 4 and connection electrodes 5 are formed.
Further, the thermistor layer 3a unnecessary _Ti x _Al y _{N z} by wet etching in a commercial Ti etchant, as shown in FIGS. 1 (a) (b), a thin film thermistor portion of a desired shape on the resist stripping Set to 3. In addition, when forming the thin film thermistor part 3 on the whole surface on the insulating film 2, it does not need to pattern-form the thermistor layer 3a.

  Then, while forming a protective film, adhesion | attachment of a protective tape, etc., the long insulating film 2 is cut | disconnected for every temperature sensor, and a temperature sensor is produced.

As described above, in the temperature sensor 1 of the present embodiment, the thin film thermistor portion 3 is formed at least on the entire lower surface of the connection electrode 5. Can be prevented. Therefore, even if the thin film thermistor portion 3 is set thick and the connection electrode 5 is set thin, the occurrence of poor conduction can be prevented.
Further, since the connection electrode 5 is not directly formed on the insulating film 2 but is formed on the thin film thermistor portion 3, it is more adhesive in a heat resistance test or the like than when formed on the insulating film 2. Can be suppressed.

Moreover, in the manufacturing method of the temperature sensor 1 of this embodiment, since patterning is performed after performing the thermistor layer forming step and the electrode layer forming step, it is not necessary to perform a patterning step between each sputtering, and productivity is increased. Can be improved.
Furthermore, by adopting a so-called roll-to-roll method, film formation can be performed continuously or intermittently while conveying the long insulating film 2.

When the thin film thermistor portion 3 is formed on the insulating film 2 in a flat state, after the film formation, the thin insulating film 2 is bent with the thin film thermistor portion 3 side concaved by the tensile stress of the thin film thermistor portion 3. There is a case. For this reason, when the insulating film 2 is flattened in a subsequent process such as patterning, a pulling force is applied to the thin film thermistor portion 3 to easily cause a crack.
On the other hand, in this embodiment, since the thin film thermistor part 3 is formed on the convex curved surface of the insulating film 2 that has been bent in advance on the film forming roll 15, the tensile stress of the thin film thermistor part 3 is increased after film formation. Even if it occurs, a force is applied in a direction to lower the curvature of the insulating film 2 while keeping the thin film thermistor portion 3 side convex. For this reason, even when the insulating film 2 is flattened in a subsequent process such as patterning, a force is applied in the direction in which the thin film thermistor portion 3 is compressed, and cracks are less likely to occur.
Further, when the thin film thermistor portion 3 is formed on the entire lower surface of the connection electrode 5, the insulating film 2 is curved in the extending direction over the entire surface, so that the insulating film 2 has a curvature in the extending direction and has a temperature. When the sensor 1 is used while being curved, since the curved shape is supported, it is difficult for stress to be applied to the thin film thermistor portion 3, and cracking is less likely to occur.

  Next, second to fourth embodiments of the temperature sensor according to the present invention will be described below with reference to FIGS. In the following description of each embodiment, the same constituent elements described in the above embodiment are denoted by the same reference numerals, and the description thereof is omitted.

The difference between the second embodiment and the first embodiment is that, in the first embodiment, the thin film thermistor portion 3 is formed on almost the entire surface of the insulating film 2, whereas the temperature sensor of the second embodiment. 21, as shown in FIG. 5, the thin film thermistor portion 23 is not formed in the opposing direction between at least the other end sides of the pair of connection electrodes 5.
That is, in the second embodiment, by patterning the thermistor layer 3a, the thin film thermistor portion 23 is formed under the counter electrode 4a and the periphery of the counter electrode portion 23a, the extended pair of connection electrodes 5, and the It is comprised with a pair of connection electrode part 23b which consists of the circumference | surroundings. Accordingly, the thermistor layer 3a is not provided between the pair of connection electrode portions 23b on the other end side.

  As described above, in the temperature sensor 21 according to the second embodiment, the thin film thermistor portion 23 is not formed in a facing direction between at least the other end sides of the pair of connection electrodes 5. Since conduction between the ends via the thin film thermistor portion 23 is not possible and the resistance of the thin film thermistor portion 23 can be measured only between the pair of counter electrodes 4, temperature measurement with high accuracy becomes possible.

Next, the difference between the third embodiment and the second embodiment is that in the second embodiment, the counter electrode portion 23a is formed slightly wider than the counter electrode 4, and the width of the connection electrode portion 23b is connected. The temperature sensor 31 of the third embodiment is formed slightly wider than the electrode 5, whereas the counter electrode portion 33 a is formed only under the counter electrode 4 as shown in FIG. The part 33b is formed only under the connection electrode 5.
Therefore, in the temperature sensor 31 of the third embodiment, since the region of the thin film thermistor portion 33 is limited only under the electrodes, temperature measurement with high accuracy is possible as in the second embodiment.

  Next, the difference between the fourth embodiment and the first embodiment is that, in the first embodiment, after the thermistor layer forming step is performed over the entire length of the long insulating film 2, the sputtering target is used as an electrode sputtering target. While changing to 16B and 16C, the unwinding roll 14a and the winding roll 14b are reversely rotated to form the bonding layer 5a and the outermost layer 5b. In the fourth embodiment, thermistor sputtering is performed in advance. The target 16A and the two sputtering targets for electrodes 16B and 16C are set, and the thermistor layer forming step and the electrode layer forming step are continuously performed on the same film forming roll 15.

  That is, in the fourth embodiment, the thermistor sputtering target 16A, the electrode sputtering target 16B for the bonding layer 5a, with respect to the traveling direction of the insulating film 2 supported on the outer peripheral surface 15a of the same film forming roll 15, These are arranged in the order of the electrode sputtering target 16C for the outermost layer 5b. Therefore, since the thermistor layer 3a, the bonding layer 5a, and the outermost layer 5b are continuously formed and laminated by one winding of the insulating film 2, no target replacement operation or the like is required.

  As described above, in the fourth embodiment, the thermistor layer forming step and the electrode layer forming step are continuously performed on the same film forming roll 15. Therefore, the thermistor layer 3 a and the electrode layer are formed on the same film forming roll 15. Films can be continuously formed and stacked, and high productivity can be obtained.

  The technical scope of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

  DESCRIPTION OF SYMBOLS 1, 21, 31 ... Temperature sensor, 2 ... Insulating film, 3, 23, 33 ... Thin film thermistor part, 3a ... Thermistor layer, 4 ... Counter electrode, 5 ... Connection electrode, 14a ... Unwinding roll, 14b ... Winding up Roll, 15 ... Film forming roll, 15a ... Outer peripheral surface of film forming roll, 16A ... Sputtering target for thermistor, 16B, 16C ... Sputtering target for electrode

Claims (5)

An insulating film;
A thin film thermistor portion formed of a thermistor material on the insulating film;
A pair of counter electrodes patterned on the thin film thermistor portion to face each other;
A pattern formed on the thin film thermistor portion and a pair of connection electrodes connected to the pair of counter electrodes;
The temperature sensor, wherein the thin film thermistor portion is formed at least on the entire lower surface of the connection electrode. The temperature sensor according to claim 1,
One end side of the pair of connection electrodes is connected to the pair of counter electrodes and the other end side extends in parallel with each other,
The temperature sensor, wherein the thin film thermistor portion is not formed in an opposing direction between at least the other ends of the pair of connection electrodes. A method for manufacturing the temperature sensor according to claim 1 or 2,
A thermistor layer forming step of forming a thermistor layer by sputtering a thermistor material on the insulating film using a thermistor sputtering target;
An electrode layer forming step of forming an electrode layer by sputtering an electrode material on the thermistor layer using an electrode sputtering target; and
An electrode patterning step of patterning the electrode layer after the electrode layer forming step to form the counter electrode and the connection electrode;
And a thermistor patterning step of forming the thin film thermistor portion by patterning the thermistor layer after the electrode patterning step. In the manufacturing method of the temperature sensor according to claim 3,
In the thermistor layer forming step and the electrode layer forming step, the long and strip-like insulating film is wound on a winding roll that is rotationally driven to wind the insulating film that is fed from a winding roll. Film transport process to take,
A supporting step of supporting the insulating film, which is arranged between the unwinding roll and the winding roll and is fed from the unwinding roll, with an outer peripheral surface of a rotatable film-forming roll;
In the thermistor layer forming step, the thermistor material is formed by sputtering on the opposing insulating film, using the thermistor sputtering target disposed opposite to the outer peripheral surface supporting the insulating film. Forming a layer,
In the electrode layer forming step, the electrode material is sputtered onto the opposing thermistor layers using an electrode sputtering target disposed opposite to the outer peripheral surface that supports the insulating film on which the thermistor layer is formed. A method of manufacturing a temperature sensor, wherein the electrode layer is formed by film formation. In the manufacturing method of the temperature sensor according to claim 4,
With respect to the traveling direction of the insulating film supported on the outer peripheral surface of the same film forming roll, these are arranged side by side in the order of the sputtering target for the thermistor and the sputtering target for the electrode,
The method of manufacturing a temperature sensor, wherein the thermistor layer forming step and the electrode layer forming step are continuously performed on the same film forming roll.

Images