JP2017080753A - Ultrasonic soldering method and ultrasonic soldering device - Google Patents

Ultrasonic soldering method and ultrasonic soldering device Download PDF

Info

Publication number
JP2017080753A
JP2017080753A JP2015209440A JP2015209440A JP2017080753A JP 2017080753 A JP2017080753 A JP 2017080753A JP 2015209440 A JP2015209440 A JP 2015209440A JP 2015209440 A JP2015209440 A JP 2015209440A JP 2017080753 A JP2017080753 A JP 2017080753A
Authority
JP
Japan
Prior art keywords
paste
solder
ultrasonic
soldering
bus bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015209440A
Other languages
Japanese (ja)
Other versions
JP6696665B2 (en
Inventor
浩一 上迫
Koichi Kamisako
浩一 上迫
傑也 新井
Takuya Arai
傑也 新井
ミエ子 菅原
Mieko Sugawara
ミエ子 菅原
小林 賢一
Kenichi Kobayashi
賢一 小林
秀利 小宮
Hidetoshi Komiya
秀利 小宮
正五 松井
Shogo Matsui
正五 松井
周平 横山
Shuhei Yokoyama
周平 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Art Beam Co Ltd
Tokyo University of Agriculture and Technology NUC
Original Assignee
Art Beam Co Ltd
Tokyo University of Agriculture and Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Art Beam Co Ltd, Tokyo University of Agriculture and Technology NUC filed Critical Art Beam Co Ltd
Priority to JP2015209440A priority Critical patent/JP6696665B2/en
Priority to TW105118748A priority patent/TWI630049B/en
Priority to KR1020160078529A priority patent/KR20170048135A/en
Priority to CN201610537479.1A priority patent/CN106607644B/en
Priority to PCT/JP2016/079948 priority patent/WO2017073299A1/en
Publication of JP2017080753A publication Critical patent/JP2017080753A/en
Priority to KR1020180167094A priority patent/KR102002796B1/en
Application granted granted Critical
Publication of JP6696665B2 publication Critical patent/JP6696665B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/06Soldering, e.g. brazing, or unsoldering making use of vibrations, e.g. supersonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/0008Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016Brazing of electronic components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/19Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/20Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B23K20/106Features related to sonotrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/02Soldering irons; Bits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/02Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

PURPOSE: To provide an ultrasonic soldering method and an ultrasonic soldering device capable of performing soldering to an electrode or the like which does not contain Ag or lead, or has a reduced amount of inclusion thereof, as a part to be soldered.CONSTITUTION: An ultrasonic soldering method includes: a preliminary heating step in which a substrate made by applying a paste containing no Ag, Cu or Pb onto an arbitrary part and sintering the paste or a paste part on the substrate is preliminarily heated at a first prescribed temperature lower than a melting point of solder; and an ultrasonic soldering step in which a solder iron tip part is abutted on the paste part or is moved while being abutted on the paste part and soldering is performed on the paste part, in such a state that the solder supplied while applying the ultrasonic onto the solder iron tip part abutted on the paste part of the substrate of the first prescribed temperature preliminarily heated in the preliminary heating step is molten, and in such a state as to be adjusted to a second prescribed temperature lower than the temperature at which the solder is molten when the ultrasonic is not applied.SELECTED DRAWING: Figure 2

Description

本発明は、基板上の任意部分にペーストを塗布して焼結した部分に半田付けする超音波半田付け方法および超音波半田付け装置に関するものである。   The present invention relates to an ultrasonic soldering method and an ultrasonic soldering apparatus in which a paste is applied to an arbitrary part on a substrate and soldered to a sintered part.

従来、再生可能エネルギー利用の一つである太陽電池は、20世紀の主役である半導体技術をベースにその開発が行われている。人類の生存を左右する地球レベルの重要な開発である。その開発の課題は太陽光を電気エネルギーに変換する効率ばかりではなく製造コストの低減および無公害という課題にも向き合いながら進められている。これらを実現する取り組みは、特に、電極に使用されている銀(Ag)や鉛(Pb)の使用量を低減ないし無くすことが重要とされている。   Conventionally, solar cells, which are one of the uses of renewable energy, have been developed based on semiconductor technology, which is the leading role in the 20th century. It is an important development at the global level that affects the survival of humankind. The challenge of the development is progressing while facing not only the efficiency of converting sunlight into electric energy but also the problem of reduction in manufacturing costs and pollution-free. In efforts to achieve these, it is particularly important to reduce or eliminate the amount of silver (Ag) and lead (Pb) used in the electrodes.

一般に、太陽電池の構造は、図18の(a)の平面図および(b)の断面図に示すように、太陽光エネルギーを電気エネルギーに変換するN型/P型のシリコン基板43、シリコン基板43の表面の反射を防止機能を有し、絶縁体薄膜である窒化シリコン膜45、シリコン基板43中に発生した電子を取り出すフィンガー電極42、フィンガー電極42で取り出した電子を集めるバスバー電極41、バスバー電極41に集めた電子を外部に取り出す引出リード電極47の各要素より構成されている。   In general, as shown in the plan view of FIG. 18A and the cross-sectional view of FIG. 18B, the solar cell has an N-type / P-type silicon substrate 43 that converts solar energy into electric energy, and a silicon substrate. 43 has a function of preventing reflection of the surface of the silicon nitride film 45, which is an insulating thin film, a finger electrode 42 for extracting electrons generated in the silicon substrate 43, a bus bar electrode 41 for collecting electrons extracted by the finger electrode 42, a bus bar It consists of each element of an extraction lead electrode 47 for taking out the electrons collected on the electrode 41 to the outside.

このうち、バスバー電極(バス電極)41、フィンガー電極42に、銀(銀ペースト)および鉛(鉛ガラス)が使用されており、これの銀の使用量を無くし、あるいは低減し、更に、鉛(鉛ガラス)の使用量を低減ないし無くし、低コストかつ無公害にすることが望まれている。   Among these, silver (silver paste) and lead (lead glass) are used for the bus bar electrode (bus electrode) 41 and the finger electrode 42, and the amount of silver used is eliminated or reduced. It is desired to reduce or eliminate the amount of (lead glass) used, and to reduce costs and pollution.

特に、上記電極(バスバー電極41、フィンガー電極42を焼結して形成するために従来は銀ペースト(あるいは一部Cuペースト)を用い、この銀ペーストには、銀成分(粉末)、ガラス成分(鉛ガラス)、有機材の成分、有機溶媒の成分、樹脂の成分を含んでいるので、この先頭2つの銀成分(粉末)およびガラス成分(鉛ガラス)を無くし、代わりのものに置き換えて(例えばNTAガラス(後述する)に置き換えて)、これをスクリーン印刷して焼結して形成した電極(Ag,Cu.Pb無)に引出リード線等を半田付けすることが望まれている。   In particular, a silver paste (or a part of Cu paste) has been conventionally used to sinter and form the electrodes (the bus bar electrode 41 and the finger electrode 42). The silver paste includes a silver component (powder), a glass component ( (Lead glass), organic material component, organic solvent component, resin component, so the first two silver components (powder) and glass component (lead glass) are eliminated and replaced with (for example, It is desired to solder an extraction lead wire or the like to an electrode (without Ag, Cu.Pb) formed by screen printing and sintering this (replaced with NTA glass (described later)).

上述した例えば太陽電池を構成する電極(バスバー電極41およびフィンガー電極42等)を焼結して形成するために従来の銀ペースト中の銀成分(粉末)およびガラス成分(鉛ガラス)を無くし、代わりのものに置き換え(例えばNTAガラス)で置き換えて、銀、鉛を無くしあるいは低減したNTAペースト(特願2015−191857)を焼結して形成した電極部分にはAg等がない(あるいはAg等が僅かしかない)ために従来の半田付けができないという事態が発生した。   For example, the silver component (powder) and glass component (lead glass) in the conventional silver paste are eliminated and replaced in order to sinter and form the electrodes (such as the bus bar electrode 41 and the finger electrode 42) that constitute the solar cell described above. In the electrode part formed by sintering with NTA paste (Japanese Patent Application No. 2015-191857) in which silver or lead has been eliminated or reduced, for example, there is no Ag or the like (or Ag etc.) For this reason, the conventional soldering cannot be performed.

これを解決して、Ag等がないあるいは僅かしかない部分(電極等)に半田付けすることが要望されている。   It is desired to solve this problem and to solder to a portion (electrode or the like) having no Ag or the like.

本発明者らは、ペーストに後述するNTAガラス(バナジン酸塩ガラス)100%を用いてAgとガラス(鉛ガラス)を含まない、あるいは若干混入したペースト(以下NTAペーストという)を焼結して作成したバス電極等上に半田付けを可能する方法を発見した。該方法で半田付けした太陽電池は従来の銀ペーストを用いた場合よりも優れた特性を有する太陽電池の作成が可能(後述する)であることも発見した。このNTAペーストを焼結した部分(電極等)に半田付けする手法は、上述した太陽電池のバス電極等に限らず、スクリーン印刷などで電極等を作成する場合にも使える半田付け手法である。   The present inventors sintered NTA glass (vanadate glass) 100%, which will be described later, into a paste that does not contain Ag or glass (lead glass) or is slightly mixed (hereinafter referred to as NTA paste). I discovered a method that enables soldering on the created bus electrodes. It has also been found that solar cells soldered by this method can produce solar cells having characteristics superior to those obtained when a conventional silver paste is used (described later). The method of soldering the NTA paste to the sintered part (electrodes or the like) is not limited to the above-described solar cell bus electrode or the like, but is a soldering method that can be used when electrodes or the like are produced by screen printing or the like.

本発明は、これら発見に基づき、銀の使用量を無くし、ないし若干混入し、および鉛(鉛ガラス)の使用量を低減ないし無くしたペースト(例えばNTAペースト)を焼結して作成した例えば太陽電池のバス電極(バスバー電極)上に後述する超音波半田付けして表面に半田付け(いわゆる半田メッキ)、および引出リード線等を半田付けして従来通りに取り付けることを可能にし、その結果、被半田付け部分にAgや鉛を含まないあるいは混入量を削減した電極等への半田付けを可能にした。   Based on these findings, the present invention is made by sintering a paste (for example, NTA paste) that eliminates or slightly mixes silver and reduces or eliminates the use of lead (lead glass). Ultrasonic soldering, which will be described later, on the battery bus electrode (bus bar electrode) and soldering to the surface (so-called solder plating), and soldering lead wires etc. can be attached as usual, and as a result, Soldering to an electrode or the like that does not contain Ag or lead or has reduced the amount of contamination is made possible.

そのため、本発明は、基板上の任意部分にペーストを塗布して焼結した部分に半田付けする半田付け方法において、Ag、Cu、Pbを含まないペーストを任意部分に塗布して焼結した基板あるいは基板上のペースト部分を、半田の溶融温度よりも低い第1の所定温度に予備加熱する予備加熱ステップと、予備加熱ステップで予備加熱した第1の所定温度の基板のペースト部分に、当接する半田コテ先部分に超音波を印加した状態で供給した半田が溶融する、超音波を印加しないときに半田が溶融する温度よりも低い、第2の所定温度に調整した状態で、半田コテ先部分をペースト部分に当接してあるいは当接しながら移動して当該ペースト部分に半田付けする超音波半田付けステップとを有する。   Therefore, the present invention relates to a soldering method in which a paste is applied to an arbitrary portion on a substrate and soldered to a sintered portion, and a paste that does not contain Ag, Cu, Pb is applied to an arbitrary portion and sintered. Alternatively, the paste portion on the substrate is brought into contact with the preheating step for preheating the first predetermined temperature lower than the melting temperature of the solder and the paste portion of the first predetermined temperature substrate preliminarily heated in the preheating step. The solder iron tip portion is adjusted to a second predetermined temperature, which is lower than the temperature at which the solder melts when no ultrasonic wave is applied. And an ultrasonic soldering step of soldering to the paste part by moving while abutting on the paste part.

この際、第1の所定温度を、室温以上から第2の所定温度の範囲内の温度とするようにしている。   At this time, the first predetermined temperature is set to a temperature within the range from room temperature to the second predetermined temperature.

また、第2の所定温度を、超音波を印加しないときに半田が溶融する温度よりも10から40℃低い範囲内の温度とするようにしている。   Further, the second predetermined temperature is set to a temperature within a range of 10 to 40 ° C. lower than the temperature at which the solder melts when no ultrasonic wave is applied.

また、Ag,Cu、Pbを含まないペーストとして、Ag,Cu、Pbを含まなくかつバナジン酸塩ガラスを100wt%、あるいはCu,Pbを含まなくかつAgを0以上から50wt%を含み残りをバナジン酸塩ガラス、としたNTAペーストとするようにしている。   In addition, as a paste not containing Ag, Cu, Pb, it does not contain Ag, Cu, Pb and vanadate glass is 100 wt%, or it does not contain Cu, Pb and Ag contains 0 to 50 wt% and the rest is vanadine. The NTA paste is an acid salt glass.

また、半田は、少なくともSn、Zn、Clを含むようにしている。   The solder contains at least Sn, Zn, and Cl.

また、超音波半田付けステップで半田付けする際に、ペースト部分に当該ペースト中の有機溶剤が残留しないように予め乾燥あるいは加熱乾燥するようにしている。   Further, when soldering in the ultrasonic soldering step, drying or heat drying is performed in advance so that the organic solvent in the paste does not remain in the paste portion.

また、基板上に塗布するペースト部分が、可及的に滑らかになるようにして焼結するようにしている。   Further, the paste portion applied on the substrate is sintered so as to be as smooth as possible.

また、超音波は、20KHzから150KHzの周波数とするようにしている。   The ultrasonic wave has a frequency of 20 KHz to 150 KHz.

本発明は、上述したように、Ag,Cu、Pbを含まない例えば導電性のNTAガラス100%のNTAペースト、更に50%程度迄(更に含有量を少なくしても可)にしたNTAペーストを、従来の銀(あるいはCu)ペーストの代わりに用いて電極を焼成し、これに超音波半田付けすることにより、従来の銀ペースト中の銀の使用量を無くし、あるいは低減し、かつ鉛(鉛ガラス)の利用量を低減ないし無くしても、ペースト焼結部分に半田付けして引出リード線等を取り付けることができることを発見した。これらにより、下記の特徴がある。   As described above, the present invention includes, for example, a conductive NTA glass 100% NTA paste that does not contain Ag, Cu, and Pb, and an NTA paste that is further reduced to about 50% (the content can be further reduced). The electrode is fired instead of the conventional silver (or Cu) paste, and the solder is ultrasonically soldered to eliminate or reduce the amount of silver used in the conventional silver paste, and lead (lead) It has been discovered that even if the amount of glass used is reduced or eliminated, it is possible to solder the paste sintered part and attach a lead wire or the like. These have the following characteristics.

第1に、例えば太陽電池のバスバー電極(バス電極)を形成するのに導電性のバナジン酸塩ガラスであるNTAガラス(登録商標第5009023号、特許第5333976号等参照)100%、更に50%程度迄を、銀ペーストの代わりに用い、Agの使用量を無くし、ないし低減し、更に、鉛(鉛ガラス)の使用量を低減ないし無くしても、本願発明の超音波半田付けによってペースト焼結部分に半田付けすることができた。   First, for example, to form a bus bar electrode (bus electrode) of a solar cell, NTA glass which is a conductive vanadate glass (see registered trademark 5009023, Japanese Patent No. 5333976, etc.) 100%, and further 50% To the extent, instead of silver paste, the amount of Ag used is eliminated or reduced, and even if the amount of lead (lead glass) is reduced or eliminated, paste sintering is performed by ultrasonic soldering of the present invention. It was possible to solder to the part.

第2に、例えばバスバー電極(バス電極)をNTAガラス100%ないし50%程度(更に含有量を少なくしても可)を用いることにより、太陽光エネルギーを電子エネルギーに変換する効率がほぼ同じあるいは若干高い、バスバー電極としての効果を発揮する電極形成が現初期段階の実験結果として得られた(図17参照)。これはNTAガラスが(1)導電性を有すること、(2)NTAガラスを用いたことでフィンガー電極が当該バスバー電極(バス電極)の上面の高さと同じ部分あるいは突き抜けて上面に突出した部分が形成され、これら部分がリード電極の本発明の超音波半田付けで接合され、結果として高電子濃度領域とリード電極とが直接にフィンガー電極で接続されること、その他の要因(例えば下記の「第3に」を参照)に起因すると考察される。   Second, for example, by using about 100% to 50% of NTA glass as a bus bar electrode (bus electrode) (the content can be further reduced), the efficiency of converting solar energy into electronic energy is substantially the same or A slightly higher electrode formation exhibiting the effect as a bus bar electrode was obtained as an experimental result at the present initial stage (see FIG. 17). This is because NTA glass is (1) conductive, and (2) the NTA glass is used so that the finger electrode has the same height as the upper surface of the bus bar electrode (bus electrode) or the portion protruding through the upper surface. These portions are joined by the ultrasonic soldering of the lead electrode according to the present invention, and as a result, the high electron concentration region and the lead electrode are directly connected by the finger electrode, and other factors (for example, the “first” described below) 3) ”).

第3に、従来と異なり、フィンガー電極の形成とバスバー電極の形成とを異なるガラスフリットを含有したペーストを用いることにある。従来、フィンガー電極の形成においてはファイアスルーと呼ばれる現象を生ずる必要があった。これは、銀の焼結助剤として用いているガラスフリットの中の成分分子、例えば鉛ガラス中の鉛分子の働きによってシリコン基板の表層に形成された窒化シリコン膜の絶縁層を突き破ってフィンガー電極を形成するようにしてシリコン基板に生成された電子を効率よく集めていた。しかし、バスバー電極の形成については、ファイヤースルー現象は必要でない。従来はバスバー電極も鉛成分を含んだ鉛ガラスを焼結助剤にして焼結していたので構造は異なるもののバスバー電極とシリコン基板との電気的な導通路が形成されて変換効率を低減する事となっていた。バスバー電極形成に用いる焼結助剤をファイヤースルー現象の生じないNTAガラスを用いることによって変換効率の低減を無くすことができた。そして、NTAペーストで焼結したバスバー電極の部分に本発明の超音波半田付けで引出リード線を半田付けして電荷を取り出すことが可能となった。   Third, unlike the prior art, the finger electrode and the bus bar electrode are formed using a paste containing glass frit that is different. Conventionally, it has been necessary to generate a phenomenon called fire-through in the formation of finger electrodes. This is a finger electrode that breaks through the insulating layer of the silicon nitride film formed on the surface layer of the silicon substrate by the action of component molecules in the glass frit used as a sintering aid for silver, for example, lead molecules in lead glass. As a result, the electrons generated on the silicon substrate were efficiently collected. However, the fire-through phenomenon is not necessary for the formation of the bus bar electrode. Conventionally, the bus bar electrode was also sintered using lead glass containing lead component as a sintering aid, but although the structure is different, an electrical conduction path between the bus bar electrode and the silicon substrate is formed to reduce the conversion efficiency. It was a thing. By using NTA glass that does not cause a fire-through phenomenon as the sintering aid used for forming the bus bar electrode, reduction in conversion efficiency could be eliminated. Then, it becomes possible to take out the electric charge by soldering the lead wire to the portion of the bus bar electrode sintered with the NTA paste by the ultrasonic soldering of the present invention.

図1は、本発明の1実施例構成図を示す。この図1は、太陽電池の電極の超音波半田付けの例であり、バスバー電極5に引出リード線であるリボン7を超音波半田付けする例を取り上げて以下詳細に説明する。ここで、超音波半田付けは、電極に半田メッキすること(引出リード線なし)や、電極にリード線等を半田付けすることを含む、以下同様。   FIG. 1 shows a block diagram of an embodiment of the present invention. FIG. 1 is an example of ultrasonic soldering of electrodes of a solar cell, and will be described in detail below by taking an example of ultrasonic soldering a ribbon 7 as a lead lead wire to a bus bar electrode 5. Here, ultrasonic soldering includes solder plating on electrodes (without lead wires) and soldering leads to electrodes, etc.

図1の(a)は超音波半田付けした要部の正面図を模式的に示し、図1の(b)は点線の円状部分の拡大した側面図を模式的に示す。   FIG. 1 (a) schematically shows a front view of a main part subjected to ultrasonic soldering, and FIG. 1 (b) schematically shows an enlarged side view of a dotted circular portion.

図1の(a)および(b)において、太陽電池は、シリコン基板1の裏側に設けた裏面電極2、更にシリコン基板1の表側に設けた窒化膜3、バスバー電極5、窒化膜3を貫通する態様でシリコン基板1のPN層に発生した電子を取り出すフィンガー電極4、フィンガー電極4の上に半田6で本発明の超音波半田付けしたリボン7(引出リード線)からなる構造を持つものである。ここでは、電極であるバスバー電極5の上に半田6でリボン7を超音波半田付けするときの様子を模式的に示したものである。   1 (a) and 1 (b), the solar cell penetrates the back electrode 2 provided on the back side of the silicon substrate 1, the nitride film 3, the bus bar electrode 5, and the nitride film 3 provided on the front side of the silicon substrate 1. In this manner, it has a structure comprising a finger electrode 4 for taking out electrons generated in the PN layer of the silicon substrate 1 and a ribbon 7 (lead lead wire) ultrasonically soldered on the finger electrode 4 with solder 6 on the finger electrode 4 of the present invention. is there. Here, a state in which the ribbon 7 is ultrasonically soldered with the solder 6 on the bus bar electrode 5 as an electrode is schematically shown.

バスバー電極5は、本発明者らが発見したAg,Cu、Pbを含まなくかつバナジン酸塩ガラス100wt%としたNTAペースト(特願2015−202461号)を焼結して形成した当該バスバー電極5にはAg,Cu、Pbを全く含まない、あるいはCu,Pbを含まなくかつAgを0以上から50wt%を含み残りをバナジン酸塩ガラスからなるNTAペーストを焼結して形成した当該バスバー電極にはAgが50%以下であるため、従来の通常の半田付けでは半田付けが不可ないし極めて困難である電極である。特に、Ag、Cu,Pbを全く含まないバスバー電極5の場合には完全に従来の半田付け不可、Agを50%以下含む場合にAgの部分のみ半田付け可能で他の部分は半田付け不可で機械的強度が極めて弱く、剥離してしまう。本発明の超音波半田付けでは、NTAペーストを焼結した部分、すなわち、Ag,Cu,Pbなどがない部分あるいはある部分とない部分との全面に渡って超音波半田付け(超音波半田メッキ)が実験の結果、可能であることを発見した(図7、図8の写真参照)。   The bus bar electrode 5 is formed by sintering NTA paste (Japanese Patent Application No. 2015-202461) which does not contain Ag, Cu, Pb and is 100% by weight vanadate glass discovered by the present inventors. In the bus bar electrode formed by sintering an NTA paste which does not contain Ag, Cu, Pb, or does not contain Cu, Pb and contains Ag from 0 to 50 wt% and the rest is made of vanadate glass. Since Ag is 50% or less, it is an electrode that is impossible or extremely difficult to solder by conventional ordinary soldering. In particular, in the case of the bus bar electrode 5 which does not contain Ag, Cu, Pb at all, the conventional soldering is completely impossible. When the Ag content is 50% or less, only the Ag part can be soldered and the other parts cannot be soldered. The mechanical strength is extremely weak and the film peels off. In the ultrasonic soldering of the present invention, ultrasonic soldering (ultrasonic solder plating) is performed over the entire surface of a portion where the NTA paste is sintered, that is, a portion where there is no Ag, Cu, Pb or the like, or a portion where there is not. As a result of the experiment, it was found that this is possible (see the photographs in FIGS. 7 and 8).

図‐2では半田6は、バスバー電極5の上に超音波半田付けする半田であって、少なくともSn、Zn,Clを含む半田であり、本発明の超音波半田コテ先部分24で溶解して半田付けするものである。   In FIG. 2, the solder 6 is solder to be ultrasonically soldered onto the bus bar electrode 5 and contains at least Sn, Zn, and Cl, and is melted at the ultrasonic soldering tip portion 24 of the present invention. It is to be soldered.

リボン7は、バスバー電極5から電荷を外部に取り出す引出リード線であって、ここでは、銅のリボンの上面および下面に予めプリ半田72を付けて、銅71のリボン7が半田6によってバスバー電極5に超音波半田付けしやすくしたものである。   The ribbon 7 is a lead wire for taking out electric charge from the bus bar electrode 5 to the outside. Here, pre-solder 72 is preliminarily attached to the upper and lower surfaces of the copper ribbon, and the ribbon 71 of the copper 71 is soldered by the solder 6. 5 is easy to ultrasonic soldering.

予備加熱台11は、太陽電池全体を載せて第1の所定温度(室温以上、超音波半田付けするときに半田が溶解する温度以下の範囲内の温度)に予備加熱するものである。予備加熱台21で予備加熱することにより、バスバー電極5の半田付け部分に、図示外の超音波半田付け装置の超音波半田コテ先部分24から供給する熱量が少なくて済み、小容量の超音波半田付け装置で超音波半田付けが可能となると共に、超音波半田コテ先部分24の温度制御がしやすくかつ超音波半田付けがスムーズに可能となる。   The preheating table 11 is used to preheat the entire solar battery to a first predetermined temperature (room temperature or higher, a temperature within a range of solder melting temperature or less when ultrasonic soldering). By preheating with the preheating table 21, the amount of heat supplied to the soldering portion of the bus bar electrode 5 from the ultrasonic soldering tip portion 24 of the ultrasonic soldering device (not shown) can be reduced, and a small-capacity ultrasonic wave is required. The ultrasonic soldering can be performed by the soldering apparatus, the temperature of the ultrasonic soldering tip portion 24 can be easily controlled, and the ultrasonic soldering can be smoothly performed.

次に、図1の構成もとで、超音波半田付けするときの構成を図2を用いて詳細に説明する。   Next, the configuration when ultrasonic soldering is performed with the configuration of FIG. 1 will be described in detail with reference to FIG.

図2は、本発明の1実施例構成図(その2)を示す。   FIG. 2 shows a block diagram (part 2) of one embodiment of the present invention.

図2の(a)は図1の(b)に対応する太陽電池の要部の側面図を模式的に示し、図2の(b)と(c)は超音波半田コテ22でバスバー電極5を超音波半田付けするときの正面図を模式的に示す。図2の(b)は半田6をバスバー電極5に半田付けする場合のもの、即ち、バスバー電極5の上に半田メッキする場合の構成を示し、図2の(c)は半田6とプリ半田したリボン7とをバスバー電極5に半田付けする場合のもの、即ち、バスバー電極5の上にリボン7を半田付けする場合の構成を示す。   2A schematically shows a side view of the main part of the solar cell corresponding to FIG. 1B, and FIGS. 2B and 2C show an ultrasonic soldering iron 22 and a bus bar electrode 5. The front view when soldering is ultrasonically shown schematically. FIG. 2B shows a configuration in which the solder 6 is soldered to the bus bar electrode 5, that is, a configuration in which solder plating is performed on the bus bar electrode 5. FIG. A configuration in which the ribbon 7 is soldered to the bus bar electrode 5, that is, a configuration in which the ribbon 7 is soldered on the bus bar electrode 5 is shown.

図2の(a)は図1の(b)と同一であるので説明を省略する。   Since FIG. 2A is the same as FIG. 1B, the description thereof is omitted.

図2の(b)および(c)において、超音波半田コテ22は、本発明に係る超音波半田付け装置の1例を示し、図示のように、半田コテ先部分24とこれを加熱および超音波を供給する超音波発信機及びヒーター23から構成されるものである(図6参照)。通常は、20KHzないし150KHzの範囲内の周波数で、実験では60KHzのものを使用した。加熱容量は、予備加熱台11の温度に依存するが、実験では10W程度もの(自動温度調整付)を使用した(超音波半田付けする部分(バスバー電極5の部分)のサイズによる熱容量に対応した容量のものを使う)。   2B and 2C, an ultrasonic soldering iron 22 shows an example of an ultrasonic soldering apparatus according to the present invention. As shown in the drawing, the soldering iron tip portion 24 is heated and superposed. It is comprised from the ultrasonic transmitter and the heater 23 which supply a sound wave (refer FIG. 6). Usually, a frequency in the range of 20 KHz to 150 KHz and 60 KHz was used in the experiment. The heating capacity depends on the temperature of the preheating table 11, but in the experiment, about 10 W (with automatic temperature control) was used (corresponding to the heat capacity depending on the size of the part to be ultrasonically soldered (the part of the bus bar electrode 5)). Use the capacity.)

半田コテ先部分24は、半田6を溶融すると共にバスバー電極5の超音波半田付けする部分の温度を加熱して超音波半田付けするためのものである。半田コテ先部分24は、実験では図示のように、円柱の先頭を45度程度の斜面カットしたものを用いたが、この形状に限らず、量産製を高めるためなどに横長形状や任意形状や、更に回転する回転体やスライドするスライド台などでもよく、超音波と熱とを超音波半田付けする部分に伝導できればどのような形状でも良い。   The soldering iron tip portion 24 is used for ultrasonic soldering by melting the solder 6 and heating the temperature of the portion of the bus bar electrode 5 to be ultrasonic soldered. As shown in the experiment, the soldering iron tip portion 24 was obtained by cutting the top of a cylinder with a slope of about 45 degrees. However, the shape of the soldering iron tip 24 is not limited to this shape. Further, it may be a rotating body that rotates, a slide base that slides, or any other shape as long as it can conduct ultrasonic waves and heat to the ultrasonic soldering part.

図2の(b)のように構成し、超音波半田コテ22の半田コテ先部分24に供給された半田6をバスバー電極5の上に超音波半田付けすることにより、バスバー電極5の上に半田メッキを行うことが可能となる。   2B, the solder 6 supplied to the soldering iron tip portion 24 of the ultrasonic soldering iron 22 is ultrasonically soldered onto the busbar electrode 5, so that Solder plating can be performed.

図2の(c)のように構成し、超音波半田コテ22の半田コテ先部分24に供給された半田6とプリ半田したリボン7とをバスバー電極5の上に超音波半田付けすることにより、バスバー電極5の上にリボン7(引出リード線)を半田付けすることが可能となる。
また、予め図2の(b)のようにしてプリ半田付けしておき、この上にリボン7を超音波半田付けしてもよい。
2 (c), the solder 6 supplied to the solder iron tip portion 24 of the ultrasonic soldering iron 22 and the pre-soldered ribbon 7 are ultrasonically soldered onto the bus bar electrode 5. The ribbon 7 (lead lead wire) can be soldered on the bus bar electrode 5.
Alternatively, pre-soldering may be performed in advance as shown in FIG. 2B, and the ribbon 7 may be ultrasonically soldered thereon.

図3は、本発明の説明図を示す。図3は、半田材料等を示す。図3は、図1、図2で既述した太陽電池のバスバー電極5の自身の材料、リボン7等を半田付けする半田6の材料などの1例を示す。   FIG. 3 is an explanatory diagram of the present invention. FIG. 3 shows solder materials and the like. FIG. 3 shows an example of the material of the bus bar electrode 5 of the solar cell already described in FIGS. 1 and 2, the material of the solder 6 for soldering the ribbon 7 and the like.

工程順 従来 本発明(超音波半田付け)
・バスバー電極5 銀、約100wt% NTAガラス100wt%
(図1の(b)参照) (〜50wt%)
・半田6
(図2の(b)参照) SAC(スズ、銀、銅) 半田6(スズ、亜鉛、インジウム
の半田 アンチモン、アルミニウム等の金属
の組み合わせ又はその合金(スズー ー亜鉛の合金で、スズ20−40%
程度、残りは添加)
・リボン7 銅の周りをSAC等の 銅の周りを上記半田6で
(図2の(c)参照) 半田でコーティング コーティング(超音波半田付け)
以上のように、本発明では、バスバー電極5がNTAガラスのペースト(NTAペースト)を焼成して形成するため、従来の半田では半田付けが不可ないし極めて困難であるが、本発明の超音波半田付けで、予備加熱した状態で半田6を用いて半田付けすることにより、極めて良好にバスバー電極5の上に超音波半田付けで半田メッキや、リボン7(引出リード線)を半田付けすることが、実験により確かめられた(図7、図8の写真参照)。
Order of process Conventional invention (ultrasonic soldering)
-Bus bar electrode 5 Silver, about 100 wt% NTA glass 100 wt%
(See (b) of FIG. 1) (˜50 wt%)
・ Solder 6
(See (b) of FIG. 2) SAC (tin, silver, copper) Solder 6 (tin, zinc, indium
Soldering metals such as antimony and aluminum
Or a combination thereof (tin-zinc alloy, tin 20-40%
Degree, the rest is added)
-Ribbon 7 Copper around the copper, such as SAC The copper around the copper 6 (see Fig. 2 (c)) Coating with solder Coating (ultrasonic soldering)
As described above, in the present invention, since the bus bar electrode 5 is formed by firing NTA glass paste (NTA paste), soldering is impossible or extremely difficult with conventional solder. In addition, by soldering with the solder 6 in a preheated state, solder plating or ribbon 7 (lead lead wire) can be soldered onto the bus bar electrode 5 by ultrasonic soldering very well. This was confirmed by experiments (see the photographs in FIGS. 7 and 8).

次に、図4および図5のフローチャートの順番に従い、図1から図3の構成もとで、太陽電池の電極部(例えばバスバー電極5)の超音波半田付けの手順を詳細に説明する。   Next, the procedure of ultrasonic soldering of the electrode part (for example, bus bar electrode 5) of the solar cell will be described in detail according to the order of the flowcharts of FIGS.

図4は、本発明の動作説明フローチャート示す。   FIG. 4 is a flowchart for explaining the operation of the present invention.

図4において、S1は、NTAバスバー電極を形成する。これは、図1から図3のバスバー電極5をNTAガラス100wt%(〜50wt%)のNTAペーストをスクリーン印刷して焼結し、NTAからなるバスバー電極5を形成する。そして、NTAバスバー電極5は、右側に記載したように、
1.ペーストの有機溶剤がなくなるように処理(溶剤飛ばし)する。
In FIG. 4, S1 forms an NTA bus bar electrode. The bus bar electrode 5 of FIGS. 1 to 3 is formed by screen printing NTA glass 100 wt% (˜50 wt%) NTA paste and sintered to form the bus bar electrode 5 made of NTA. And, as described on the right side, the NTA bus bar electrode 5 is
1. The paste is treated so that the organic solvent disappears (solvent removal).

2.NTAガラス電極表面が平になるように焼結する。   2. Sinter so that the NTA glass electrode surface becomes flat.

また、1.のペーストの有機溶剤がなくなるように処理(溶剤飛ばし)するとは、NTAペースト中の有機溶剤がなくなるように、乾燥処理、あるいは加熱乾燥処理を行い、ペースト中の溶剤を十分に蒸発させて(飛ばして)無くする。溶剤が残留すると、超音波半田つけはうまくゆかない現象が現れる。   In addition, 1. To remove the organic solvent in the paste (free solvent), dry or heat dry the organic solvent in the NTA paste so that the solvent in the paste is sufficiently evaporated (fly away). And lose) If the solvent remains, the phenomenon that ultrasonic soldering does not work appears.

また、1.のペーストの有機溶剤がなくなるように処理(溶剤飛ばし)するとは、NTAペースト中の有機溶剤がなくなるように、乾燥処理、あるいは加熱乾燥処理を行い、ペースト中の溶剤を十分に蒸発させて(飛ばして)無くする。溶剤が残留すると、超音波半田つけはうまくゆかない現象が現れる。   In addition, 1. To remove the organic solvent in the paste (free solvent), dry or heat dry the organic solvent in the NTA paste so that the solvent in the paste is sufficiently evaporated (fly away). And lose) If the solvent remains, the phenomenon that ultrasonic soldering does not work appears.

この2.のNTAガラス電極が平になるように焼結するとは、図1、図2のバスバー電極5となる部分に、NTAペーストをスクリーン印刷して焼結するときに可及的に平になるようにスクリーン印刷すると共に焼成時および焼結後に可及的に平になるように焼結するように注意する。逆に言えば、小さな凹凸が形成されないように注意し、可及的に平になるように焼結する。平でないと、超音波半田付けがうまくゆかない現象が現れる。   This 2. When the NTA glass electrode is sintered so as to be flat, the NTA paste is screen-printed on the portion to be the bus bar electrode 5 in FIGS. 1 and 2 so that it becomes as flat as possible. Care is taken to screen print and sinter as flat as possible during firing and after sintering. In other words, care should be taken not to form small irregularities and sintering should be as flat as possible. If it is not flat, the phenomenon that ultrasonic soldering does not work well appears.

S2は、基板を加熱台に乗せ、半田が超音波供給したときに溶ける温度以下の温度にあげる。この予備加熱温度は、超音波半田コテ先部分24を半田6に当接して超音波を供給と同時に加熱したときには、超音波を供給しないときよりも若干低い温度で半田6が溶融するので、この半田6が超音波を供給したときに溶融する温度(第2の所定温度という)よりも低い温度(第1の所定温度(室温以上であって、超音波供給したときに半田の溶融温度以下)に半田コテ先部分24の温度を設定(調整)する。尚、第2の所定温度は、超音波を供給しつつ半田6を加熱したときに半田6が溶融する温度の範囲であって、超音波を供給しない場合の半田6の溶融温度よりも通常、10〜40℃位低い範囲の温度(半田の種類に依存するので実験によって求める)である。   In S2, the substrate is placed on the heating table and raised to a temperature not higher than the temperature at which the solder melts when ultrasonically supplied. This preheating temperature is such that when the ultrasonic soldering iron tip 24 is brought into contact with the solder 6 and heated simultaneously with the supply of ultrasonic waves, the solder 6 melts at a slightly lower temperature than when no ultrasonic waves are supplied. A temperature lower than a temperature at which the solder 6 melts when ultrasonic waves are supplied (referred to as a second predetermined temperature) (first predetermined temperature (above room temperature and below the melting temperature of solder when ultrasonic waves are supplied)) The temperature of the soldering iron tip portion 24 is set (adjusted) to the soldering iron portion 24. The second predetermined temperature is a temperature range in which the solder 6 melts when the solder 6 is heated while supplying ultrasonic waves. The temperature is usually in the range of about 10 to 40 ° C. lower than the melting temperature of the solder 6 when no sound wave is supplied (determined by experiment because it depends on the type of solder).

S3は、半田コテ先部分24を、半田に超音波を供給したときに溶解する温度の範囲内に温度をあげる。   In step S3, the temperature of the soldering iron tip 24 is raised within a temperature range that melts when ultrasonic waves are supplied to the solder.

S4は、半田コテ先部分24に、超音波20〜150KHzを供する。これらS3、S4は、半田コテ先部分24に超音波20〜150KHzを供給しつつその温度をあげて、半田6が溶解する温度(第2の所定温度)に設定(調整)する。   S4 provides ultrasonic waves 20 to 150 KHz to the soldering iron tip 24. These S3 and S4 are set (adjusted) to a temperature (second predetermined temperature) at which the solder 6 is melted by raising the temperature while supplying the ultrasonic wave 20 to 150 KHz to the soldering tip portion 24.

以上のS1からS4により、NTAペーストを焼成して形成したバスバー電極5の上に、超音波半田付けする準備が完了、即ち、半田コテ先部分24を半田6に当接して半田6を溶解してバスバー電極5に超音波半田付けする準備が完了したこととなる。   By the above S1 to S4, preparation for ultrasonic soldering is completed on the bus bar electrode 5 formed by firing the NTA paste, that is, the solder iron tip portion 24 is brought into contact with the solder 6 and the solder 6 is dissolved. Thus, the preparation for ultrasonic soldering to the bus bar electrode 5 is completed.

図5において、S5は、S4に続き、バスバー電極の上面に半田を付ける(半田メッキする)。これは、S1からS4によって超音波半田付けの準備が完了した半田コテ先部分24を、既述した図2の(b)に示すように、バスバー電極5の上面に半田6を供給しつつ当該半田コテ先部分24を当接し、半田6を溶解してバスバー電極5に超音波半田付けする。この超音波半田付けにより、図7(b)及び図8(b)に示すように、バスバー電極5の上面に半田6が半田付けする。   In FIG. 5, S5 is followed by S4, and solder is applied to the upper surface of the bus bar electrode (solder plating). This is because the soldering iron tip portion 24 which has been prepared for ultrasonic soldering by S1 to S4 is supplied to the upper surface of the bus bar electrode 5 while supplying the solder 6 as shown in FIG. The soldering iron tip portion 24 is brought into contact, the solder 6 is melted, and ultrasonic soldering is performed on the bus bar electrode 5. By this ultrasonic soldering, the solder 6 is soldered to the upper surface of the bus bar electrode 5 as shown in FIGS. 7B and 8B.

以上によって、バスバー電極5の上面に半田6を超音波半田付け(半田メッキ)することが可能となる。   As described above, the solder 6 can be ultrasonically soldered (solder plated) on the upper surface of the bus bar electrode 5.

S6は、リボン付け1として、S3とS4と同様にする。これは、図4のS3とS4と同様にして、プリ半田72されたリボン7をバスバー電極5に超音波半田付けするために、半田コテ先部分24を第2の所定温度に設定(調整)すると共に超音波を供給し、リボン7を超音波半田付け可能な状態にする。溶融する半田がバスバー電極5を半田メッキしたときと同じ半田であれば、第2の所定温度および超音波はS3、S4とのときと同じであり、異なればそれに適合(半田6、プリ半田72などの種別毎に実験で求める)した第2の所定温度および超音波を供給(印加)する。   S6 is the same as S3 and S4 as ribbon attachment 1. In the same manner as S3 and S4 in FIG. 4, in order to ultrasonically solder the ribbon 7 that has been pre-soldered 72 to the bus bar electrode 5, the solder iron tip portion 24 is set (adjusted) to a second predetermined temperature. At the same time, an ultrasonic wave is supplied so that the ribbon 7 can be ultrasonically soldered. If the solder to be melted is the same solder as when the bus bar electrode 5 is solder-plated, the second predetermined temperature and ultrasonic wave are the same as those at S3 and S4. The second predetermined temperature and the ultrasonic wave that are obtained by experiment for each type are supplied (applied).

S7は、リボン付け2として、超音波半田コテ先部分をリボンに当接して半田付けする。これは、超音波半田コテ先部分24をリボン7に当接し、当該リボン7にプリ半田72されている半田、あるいはバスバー電極5に半田メッキされている半田、あるいは外部から供給した半田、を溶解してリボン7をバスバー電極5に超音波半田付けする。   In S7, as the ribbon attachment 2, the ultrasonic soldering iron tip is brought into contact with the ribbon and soldered. This is because the ultrasonic soldering iron tip 24 is brought into contact with the ribbon 7 and the solder pre-soldered 72 on the ribbon 7 or the solder plated on the bus bar electrode 5 or the solder supplied from the outside is dissolved. Then, the ribbon 7 is ultrasonically soldered to the bus bar electrode 5.

S8は、完成する。これは、バスバー電極5の上面に銅のリボン7の超音波半田付けを完了したことを意味する。   S8 is completed. This means that the ultrasonic soldering of the copper ribbon 7 to the upper surface of the bus bar electrode 5 has been completed.

以上によって、太陽電池を構成する、NTAペーストをスクリーン印刷して焼成したバスバー電極5の上に超音波半田付けにより、半田メッキ、更にリボン7を半田付けすることが可能となった。   As described above, solder plating and further ribbon 7 can be soldered by ultrasonic soldering on the bus bar electrode 5 that constitutes the solar cell and is screen-printed and fired with NTA paste.

図6は、本発明の超音波半田付け装置の特性例を示す。これは、図1から図5で既述した試作実験で用いた超音波半田付け装置の特性の1例を示す。   FIG. 6 shows an example of characteristics of the ultrasonic soldering apparatus of the present invention. This shows an example of the characteristics of the ultrasonic soldering apparatus used in the prototype experiment described with reference to FIGS.

図6において、超音波半田付け装置の特性として、図示の下記のものを試作実験に用いた。量産では量産性を考慮するので、既述した図1から図5に既述したNTAペーストを焼成して作成したバスバー電極5などの上面に、良好に超音波半田付けができれば、どのような特性のものを採用しての良い。   In FIG. 6, as the characteristics of the ultrasonic soldering apparatus, the following ones shown in the figure were used for the prototype experiment. Since mass production is considered in mass production, what kind of characteristics can be obtained if ultrasonic soldering can be satisfactorily performed on the upper surface of the bus bar electrode 5 or the like prepared by firing the NTA paste described in FIGS. Good thing to adopt.

項目 内容 備考
・超音波発信周波数 60KHz±5KHz
・発信出力 最大15W(実効10W)
・ヒーター温度 200〜500℃ 電源容量200W
(ヒーター部分の温度で、
半田コテ先部分の温度ではない。)
尚、半田コテ先部分24の温度は、図示外の温度計で計測する(例えば熱電対を半田コテ先部分24に埋め込んでおき実測する。そして、この実測値をもとに第2の所定温度に自動調整する)。
Item Contents Remarks ・ Ultrasonic transmission frequency 60KHz ± 5KHz
・ Output power: Maximum 15W (effective 10W)
・ Heater temperature 200 ~ 500 ℃ Power supply capacity 200W
(At the temperature of the heater part,
It is not the temperature of the soldering iron tip. )
The temperature of the soldering iron tip portion 24 is measured with a thermometer (not shown) (for example, a thermocouple is embedded in the soldering iron tip portion 24 and measured. Then, based on this measured value, a second predetermined temperature is measured. Automatically adjust).

図7は、本発明の超音波半田付け例(NTA100%)を示す。図示の写真は、図4および図5で説明した、NTAペースト(NTA100%)をスクリーン印刷して焼結して形成したバスバー電極(NTA100%)5について、超音波半田付け前と後の写真を示す。   FIG. 7 shows an example of ultrasonic soldering (NTA 100%) of the present invention. The photographs shown in FIG. 4 and FIG. 5 show the pictures before and after ultrasonic soldering of the bus bar electrode (NTA 100%) 5 formed by screen printing and sintering the NTA paste (NTA 100%). Show.

図7の(a)は超音波半田付け前(NTA100%)の写真の例を示す。図7の(a)の写真上で、横方向の棒状のものがフィンガー電極4(Ag100%,図1、図2参照)であり、フィンガー電極4の上に覆うように縦方向の帯状のものが、今回の試作実験したNTAペースト(100%)を焼成して形成したバスバー電極(NTA100%)5であある。このバスバー電極(NTA100%)5の部分に、本発明では半田コテ先部分24を当接して半田付けしたり、リボン付けしたり、試作実験した。   FIG. 7A shows an example of a photograph before ultrasonic soldering (NTA 100%). In the photograph of FIG. 7A, the bar in the horizontal direction is the finger electrode 4 (Ag 100%, see FIGS. 1 and 2), and the band in the vertical direction so as to cover the finger electrode 4 However, this is a bus bar electrode (NTA 100%) 5 formed by firing the NTA paste (100%) which was experimentally produced this time. In the present invention, a soldering iron tip portion 24 is brought into contact with the bus bar electrode (NTA 100%) 5 for soldering, ribboning, or a trial experiment.

図7の(b)は図7の(a)のバスバー電極(NTA100%)5の上に、半田6のみを既述した図4、図5の手順に従い超音波半田付けした写真例を示す。実際は、電荷を外部に取り出す引出リード線として使うリボン7を超音波半田付けするが、リボン7を半田付けしたのではその下の状態が見えなくなってしまうので、ここでは、実験的に半田6のみを超音波半田付けしたものを示す。図示のように、バスバー電極(NTA100%)5の部分は、白く光り半田がバスバー電極(NTA100%)の上に半田付けされている様子が明確に判明する。   FIG. 7B shows an example of a photograph in which only the solder 6 is ultrasonically soldered on the bus bar electrode (NTA 100%) 5 in FIG. 7A according to the procedure of FIGS. Actually, the ribbon 7 used as an extraction lead wire for taking out the electric charge is ultrasonically soldered. However, if the ribbon 7 is soldered, the state below the ribbon 7 becomes invisible. This is an ultrasonic soldered product. As shown in the figure, the portion of the bus bar electrode (NTA 100%) 5 shines white and clearly shows that the solder is soldered onto the bus bar electrode (NTA 100%).

以上のように、バスバー電極(NTA100%)の上に本発明の図4、図5の手順に従い超音波半田付けすることにより、従来の半田付けで不可能であったNTA100%のバスバー電極5の上に半田6を半田付けできることが確認できた(本発明者らが発見した)。   As described above, ultrasonic soldering is performed on the bus bar electrode (NTA 100%) according to the procedure of FIGS. 4 and 5 of the present invention, so that the bus bar electrode 5 of NTA 100%, which is impossible by conventional soldering, can be obtained. It has been confirmed that the solder 6 can be soldered on (discovered by the present inventors).

次に、図7のNTA100%と同様に、NTA50%のバスバー電極5についての写真の例を図8に示す。   Next, FIG. 8 shows an example of a photograph of the bus bar electrode 5 of NTA 50%, similarly to NTA 100% of FIG.

図8は、本発明の超音波半田付け例(NTA50%)を示す。図示の写真は、図4および図5で説明した、NTAペースト(NTA50%)をスクリーン印刷して焼結して形成したバスバー電極(NTA50%)5について、超音波半田付け前と後の写真を示す。   FIG. 8 shows an example of ultrasonic soldering (NTA 50%) of the present invention. The photographs shown in FIG. 4 and FIG. 5 are photographs of the bus bar electrode (NTA 50%) 5 formed by screen printing and sintering the NTA paste (NTA 50%) before and after ultrasonic soldering. Show.

図8の(a)は超音波半田付け前(NTA50%)の写真の例を示す。図8の(a)の写真上の上端部分の横方向の棒状のものがフィンガー電極4(Ag100%,図1、図2参照)であり、フィンガー電極4の上に覆うように縦方向の帯状のものが、今回の試作実験したNTAペースト(50%)を焼成して形成したバスバー電極(NTA50%)5である。このバスバー電極(NTA50%)5の部分に、本発明では半田コテ先部分24を当接して半田付けしたり、リボン付けしたり、試作実験した。   FIG. 8A shows an example of a photograph before ultrasonic soldering (NTA 50%). 8A is a finger electrode 4 (Ag 100%, see FIG. 1 and FIG. 2) at the top end of the upper end portion on the photograph. Is a bus bar electrode (NTA 50%) 5 formed by firing the NTA paste (50%) which was experimentally produced this time. In the present invention, a soldering iron tip portion 24 was brought into contact with the bus bar electrode (NTA 50%) 5 for soldering, ribboning, or a trial experiment.

図8の(b)は図8の(a)のバスバー電極(NTA50%)5の上に、半田6のみを既述した図4、図5の手順に従い超音波半田付けした写真例を示す。実際は、電荷を外部に取り出す引出リード線として使うリボン7を超音波半田付けするが、リボン7を半田付けしたのではその下の状態が見えなくなってしまうので、ここでは、実験的に半田6のみを超音波半田付けしたものを示す。図示のように、バスバー電極(NTA50%)5の部分は、白く光り半田がバスバー電極(NTA50%)の上に半田付けされている様子が明確に判明する。   FIG. 8B shows an example of a photograph in which only the solder 6 is ultrasonically soldered on the bus bar electrode (NTA 50%) 5 in FIG. 8A according to the procedure of FIGS. Actually, the ribbon 7 used as an extraction lead wire for taking out the electric charge is ultrasonically soldered. However, if the ribbon 7 is soldered, the state below the ribbon 7 becomes invisible. This is an ultrasonic soldered product. As shown in the figure, the portion of the bus bar electrode (NTA 50%) 5 shines white and clearly shows that the solder is soldered onto the bus bar electrode (NTA 50%).

以上のように、バスバー電極(NTA50%)の上に本発明の図4、図5の手順に従い超音波半田付けすることにより、従来の半田付けで不可能あるいは極めて困難、あるいは剥離しやすかったNTA50%のバスバー電極5の上に半田6を半田付けできることが確認できた(本発明者らが発見した)。   As described above, by performing ultrasonic soldering on the bus bar electrode (NTA 50%) according to the procedure of FIGS. 4 and 5 of the present invention, the NTA 50 which is impossible or extremely difficult by conventional soldering or easily peeled off. It was confirmed that the solder 6 could be soldered onto the% bus bar electrode 5 (discovered by the present inventors).

以下、上述した本発明の超音波半田付けした太陽電電のバスバー電極5等を作成したときの実施例(実験例)を詳細に説明する(以下の実施例は特願2015−180720号(出願日:平成27年9月14日)の発明者、出願人が同一の出願の実施例である)。   Hereinafter, an example (experimental example) when the above-described ultrasonic soldered solar electric bus bar electrode 5 of the present invention is prepared will be described in detail (the following example is Japanese Patent Application No. 2015-180720 (application date)). : Inventor and applicant of September 14, 2015) are examples of the same application).

図9は、本発明の1実施例構造図(工程の完成図:断面図)を示す。   FIG. 9 shows a structural diagram of one embodiment of the present invention (process completion drawing: sectional view).

図9において、シリコン基板11は、公知の半導体のシリコン基板である。   In FIG. 9, a silicon substrate 11 is a known semiconductor silicon substrate.

高電子濃度領域(拡散ドーピング層)12は、シリコン基板11の上に所望のp型/n型の層を拡散ドーピングなどで形成した公知の領域(層)であって、図では上方向から太陽光が入射するとシリコン基板11で電子を発生(発電)し、その電子を蓄積する領域である。ここでは、蓄積した電子は電子取出口(フィンガー電極(銀))14によって上方向に取り出されるものである(発明の効果参照)。   The high electron concentration region (diffusion doping layer) 12 is a known region (layer) in which a desired p-type / n-type layer is formed on the silicon substrate 11 by diffusion doping or the like. This is a region where electrons are generated (power generation) in the silicon substrate 11 when light is incident and the electrons are accumulated. Here, the accumulated electrons are taken out upward by an electron outlet (finger electrode (silver)) 14 (see the effect of the invention).

絶縁膜(窒化シリコン膜)13は、太陽光を通過(透過)させ、かつバスバー電極15と高電子濃度領域14とを電気的に絶縁する公知の膜である。   The insulating film (silicon nitride film) 13 is a known film that allows sunlight to pass (transmits) and electrically insulates the bus bar electrode 15 from the high electron concentration region 14.

電子取出口(フィンガー電極(銀))14は、高電子濃度領域12中に蓄積した電子を絶縁膜13に形成した穴を介して取り出す口(フィンガー電極)である。フィンガー電極14は、本発明では、図示のように、バスバー電極15をNTAガラス100%(ないし71%程度)で焼成した場合には、フィンガー電極14がバスバー電極15の上面の高さと同じ部分あるいは突き抜けて上面に突出した部分を形成(焼成)し(NTAペーストの厚さをコントロールすることで行う)、高電子濃度領域12中の電子を当該フィンガー電極14を介してリード線17に直接に流入させる(電子を直接に取り出させる)ことが可能となる。つまり、高電子濃度領域12、フィンガー電極14、バスバー電極15、リード線17の経路1(従来の経路1)と、高電子濃度領域12、フィンガー電極14、リード線17の経路2(本発明で追加された経路2)との2つの経路で高電子濃度領域12中の電子(電流)をリード線17を介して外部に取り出すことができ、結果として、高電子濃度領域12とリード線17との間の抵抗値を非常に小さくすることが可能となり、損失を低減して結果として太陽電池の効率を向上させることができる。   The electron take-out port (finger electrode (silver)) 14 is a port (finger electrode) that takes out electrons accumulated in the high electron concentration region 12 through a hole formed in the insulating film 13. In the present invention, as shown in the figure, when the bus bar electrode 15 is baked with NTA glass 100% (or about 71%), the finger electrode 14 is the same as the height of the upper surface of the bus bar electrode 15 or A portion protruding through and projecting to the upper surface is formed (fired) (by controlling the thickness of the NTA paste), and electrons in the high electron concentration region 12 directly flow into the lead wire 17 through the finger electrode 14 (Electrons can be taken out directly). That is, the high electron concentration region 12, the finger electrode 14, the bus bar electrode 15, and the route 1 of the lead wire 17 (conventional route 1), and the high electron concentration region 12, the finger electrode 14, and the route 2 of the lead wire 17 (in the present invention). Electrons (current) in the high electron concentration region 12 can be extracted to the outside through the lead wire 17 through two routes including the added route 2). As a result, the high electron concentration region 12 and the lead wire 17 It is possible to make the resistance value between the two very small, thereby reducing the loss and consequently improving the efficiency of the solar cell.

バスバー電極(電極1(NTAガラス100%))15は、複数の電子取出口(フィンガーバー電極)14を電気的に接続する電極であって、Agの使用量を無くす、ないし削減する対象の電極である(発明の効果参照)。   A bus bar electrode (electrode 1 (NTA glass 100%)) 15 is an electrode for electrically connecting a plurality of electron outlets (finger bar electrodes) 14, and an electrode to be used to eliminate or reduce the amount of Ag used (See the effect of the invention).

裏面電極(電極2(アルミ))16は、シリコン基板11の下面に形成した公知の電極である。   The back electrode (electrode 2 (aluminum)) 16 is a known electrode formed on the lower surface of the silicon substrate 11.

リード線(ハンダ形成)17は、複数のバスバー電極15を電気的に連結した電子(電流I)を外部に取り出したり、更に、本発明ではフィンガー電極14がバスバー電極15の上面と同じ高さの部分あるいは突き抜けた部分に、当該リード線を超音波半田付けして接合し電子(電流)を外部に取出したりするリード線である。   The lead wire (solder formation) 17 takes out electrons (current I) electrically connected to the plurality of bus bar electrodes 15 to the outside, and in the present invention, the finger electrode 14 has the same height as the upper surface of the bus bar electrode 15. It is a lead wire that takes out the electrons (current) to the outside by ultrasonic soldering the lead wire to the portion or the protruding portion.

以上の図9の構造のもとで、上から下方向に太陽光を照射すると、太陽光はリード線17および電子取出口14の無い部分と絶縁膜13を通過し、シリコン基板11に入射して電子を発生する。その後、高電子濃度領域12に蓄積した電子は、電子取出口(フィンガー電極)14、バスバー電極15、リード線17の経路1、および電子取出口(フィンガー電極)14、リード線17の経路2の両経路を介して外部に取り出される。この際、図13から図17で後述するように、バスバー電極15を、ペーストにガラスフリットとしてNTAガラス(導電性ガラス)100%ないし71%(更に少なくても可、図17参照)を混入して焼成して形成し、Agの使用量を無くし、ないし低減することが可能となる。以下順次詳細に説明する。   Under the structure shown in FIG. 9, when sunlight is irradiated from above to below, the sunlight passes through the portion without the lead wire 17 and the electron outlet 14 and the insulating film 13 and enters the silicon substrate 11. To generate electrons. Thereafter, the electrons accumulated in the high electron concentration region 12 pass through the electron take-out port (finger electrode) 14, the bus bar electrode 15, the route 1 of the lead wire 17, and the electron take-out port (finger electrode) 14 and the route 2 of the lead wire 17. It is taken out via both paths. At this time, as will be described later with reference to FIGS. 13 to 17, the bus bar electrode 15 is mixed with NTA glass (conductive glass) 100% to 71% (more or less, see FIG. 17) as glass frit in the paste. It is possible to eliminate or reduce the amount of Ag used. Details will be sequentially described below.

図10は、本発明の動作説明フローチャートを示し、図11および図12は各工程の詳細構造を示す。   FIG. 10 shows a flowchart for explaining the operation of the present invention, and FIGS. 11 and 12 show the detailed structure of each process.

図10において、S1は、シリコン基板を準備する。   In FIG. 10, a silicon substrate is prepared in S1.

S2は、クリーニングする。これらS1、S2は、図11の(a)に示すように、S1で準備したシリコン基板11の面(高電子濃度領域12を形成する面)を綺麗にクリーニングする。   In S2, cleaning is performed. These S1 and S2 cleanly clean the surface (surface on which the high electron concentration region 12 is formed) of the silicon substrate 11 prepared in S1, as shown in FIG.

S3は、拡散ドーピングする。これは、図11の(b)に示すように、図11(a)でクリーニングしたシリコン基板11の上に公知の拡散ドーピングを行い、高電子濃度領域12を形成する。   S3 is diffusion doped. As shown in FIG. 11B, this involves performing known diffusion doping on the silicon substrate 11 cleaned in FIG. 11A to form a high electron concentration region 12.

S4は、反射防止膜(窒化シリコン膜)を形成する。これは、図11の(c)に示すように、図11の(b)の高電子濃度領域12を形成した上に、反射防止膜(太陽光を通過させ、かつ表面反射を可及的に低減した膜)として例えば窒化シリコン膜を公知の手法で形成する。   In S4, an antireflection film (silicon nitride film) is formed. As shown in FIG. 11 (c), the high electron concentration region 12 of FIG. 11 (b) is formed, and an antireflection film (sunlight is passed through and surface reflection is made as much as possible. For example, a silicon nitride film is formed by a known method as the reduced film.

S5は、フィンガー電極をスクリーン印刷する。これは、図11の(d)に示すように、図11の(c)の窒化シリコン膜13を形成した上に、形成するフィンガー電極14のパターンをスクリーン印刷する。印刷材料は、例えば銀にフリットとして鉛ガラスを混入したものを用いる。   S5 screen-prints the finger electrodes. As shown in FIG. 11 (d), the pattern of the finger electrode 14 to be formed is screen-printed on the silicon nitride film 13 shown in FIG. 11 (c). As the printing material, for example, silver mixed with lead glass as a frit is used.

S6は、フィンガー電極を焼成し、ファイヤースルーさせる。これは、図11の(d)でスクリーン印刷したフィンガー電極14のパターン(銀と鉛ガラスのフリットを混入したもの)を焼成し、図11の(e)に示すように、窒化シリコン膜13にファイヤースルーさせてその中に銀(導電性)を形成したフィンガー電極14を形成する。   In S6, the finger electrode is fired and fired through. This is because the finger electrode 14 pattern (mixed with silver and lead glass frit) screen-printed in FIG. 11 (d) is baked, and the silicon nitride film 13 is formed as shown in FIG. 11 (e). The finger electrode 14 in which silver (conductivity) is formed is formed through fire-through.

S7は、バスバー電極(電極1)をスクリーン印刷する。これは、図12の(f)に示すように、図11の(e)のフィンガー電極14を形成した上に、形成するバスバー電極15のパターンをスクリーン印刷する。印刷材料は、例えばフリットとしてNTAガス(100%)のものを用いる。   S7 screen-prints the bus bar electrode (electrode 1). As shown in FIG. 12 (f), the pattern of the bus bar electrode 15 to be formed is screen-printed on the finger electrode 14 shown in FIG. 11 (e). For the printing material, for example, NTA gas (100%) is used as a frit.

S8は、バスバー電極を焼成する。これは、図12の(f)でスクリーン印刷したバスバー電極15のパターン(NTAガラス(100%)のフリット)を焼成(焼成時間は長くても1分以内、1〜3秒以上で焼成)し、図12の(g)に示すように、バスバー電極15が最上層に形成され、かつ本発明の特徴である、フィンガー電極14が当該最上層に形成されたバスバー電極15の上面と同じ高さの部分、あるいは突き抜けた部分が形成される。(これは膜厚コントロールで行う。)
尚、S5及びS7の印刷を行い、両者を同時に焼成してもよい。
In S8, the bus bar electrode is fired. This is because the bus bar electrode 15 pattern (NTA glass (100%) frit) screen-printed in (f) of FIG. 12 is fired (fired within 1 minute at most, 1-3 seconds or longer). As shown in FIG. 12G, the bus bar electrode 15 is formed in the uppermost layer, and the finger electrode 14 is the same height as the upper surface of the bus bar electrode 15 formed in the uppermost layer, which is a feature of the present invention. Or a portion that has been penetrated. (This is done by controlling the film thickness.)
Note that S5 and S7 may be printed and both may be fired simultaneously.

S9は、裏面電極(電極2)を形成する。これは、図12の(h)に示すように、シリコン基板11の下側(裏面)に例えばアルミ電極を形成する。   S9 forms a back electrode (electrode 2). For example, an aluminum electrode is formed on the lower side (back surface) of the silicon substrate 11 as shown in FIG.

S10は、リード線をハンダ形成する。これは、図12の(i)に示すように、図12の(g)のバスバー電極を電気的に接続するリード線をハンダで形成、例えば超音波半田付けで形成して電気的に接続すると、高電子濃度領域12、フィンガー電極14、バスバー電極16、リード線17の経路1(従来の経路1)と、高電子濃度領域12、フィンガー電極14、リード線17の経路2(本発明で追加した経路2)との両経路で、高電子濃度領域12中の電子(電流)をリード線17を介して外部に取り出すことが可能となり、高電子濃度領域12とリード線17との間の抵抗値を非常に小さくしてロスを低減して太陽電池の効率を向上させることができる。すなわち、本発明で追加した経路2は、フィンガー電極14の一端が高電子濃度領域12の中にあり、他端がNTAガラス100%のバスバー電極15の上面と同じ高さの部分あるいは突き抜けた部分があり、この部分にリード線が直接接合(超音波半田付けで直接接合)されるので、高電子濃度領域12、フィンガー電極14、リード線17の経路2が形成される。なお、経路1は、従来の経路である。   S10 solders the lead wire. As shown in FIG. 12 (i), when the lead wires for electrically connecting the bus bar electrodes in FIG. 12 (g) are formed by solder, for example, formed by ultrasonic soldering and electrically connected. High electron concentration region 12, finger electrode 14, bus bar electrode 16, path 1 of lead wire 17 (conventional path 1) and high electron concentration region 12, finger electrode 14, lead wire 17 path 2 (added in the present invention) In both the paths 2) and 2), the electrons (current) in the high electron concentration region 12 can be taken out via the lead wire 17, and the resistance between the high electron concentration region 12 and the lead wire 17 can be extracted. The value can be made very small to reduce loss and improve solar cell efficiency. That is, in the path 2 added in the present invention, one end of the finger electrode 14 is in the high electron concentration region 12, and the other end is a portion that is the same height as the top surface of the bus bar electrode 15 made of NTA glass 100% or a portion that penetrates. Since the lead wire is directly joined to this portion (direct joining by ultrasonic soldering), the path 2 of the high electron concentration region 12, the finger electrode 14, and the lead wire 17 is formed. The route 1 is a conventional route.

以上の工程により、シリコン基板に太陽電池を作成することが可能となる。   Through the above steps, a solar cell can be formed on the silicon substrate.

図13は、本発明の詳細説明図(バスバー電極の焼成)を示す。   FIG. 13 is a detailed explanatory view (firing of bus bar electrodes) of the present invention.

図13の(a)はバスバー電極を銀100%、NTA0%(重量比)で焼成した例を模式的に示し、図13の(b)はバスバー電極を銀50%、NTA50%(重量比)で焼成した例を模式的に示し、図13の(c)はバスバー電極をNTA100%(重量比)で焼成した例を模式的に示す。焼成時間は、長くても1分以内で、1〜3秒以上とした。   13A schematically shows an example in which the bus bar electrode is baked with 100% silver and 0% NTA (weight ratio), and FIG. 13B shows the bus bar electrode with 50% silver and NTA 50% weight ratio. FIG. 13C schematically shows an example in which the bus bar electrode is fired at 100% NTA (weight ratio). The firing time was set to 1 to 3 seconds or longer within 1 minute at the longest.

図13の(a)と図13の(b)と図13の(c)とで図示のようにほぼ同構造となるように形成した太陽電池の試作実験では下記のような実験結果が得られた。   In a prototype experiment of a solar cell formed to have substantially the same structure as shown in FIGS. 13A, 13B and 13C, the following experimental results are obtained. It was.

太陽電池の変換効率
図13の(a)のAg 100%、NTA 0% 平均約17.0%
図13の(b)のAg 50%、NTA 50% 平均約17.0%
図13の(c)のAg 0%、NTA 100% 平均約17.2%
試作実験結果は、バスバー電極のパターンを印刷する材料として、図13の(a)と、図13の(b)とでは太陽電池を作成したときの変換効率が平均約17.0%でほぼ同じ結果が得られ、更に、図13の(c)では変換効率が平均約17.2%が得られた。これら図13の(a)から(c)のいずれもほぼ同じ変換効率の範囲内か、あるいは図13の(c)のNTA 100%が若干高い変換効率であることが初期実験結果から判明する。尚、NTAガラスは、バナジウム、バリウム、鉄から構成され、特に鉄は内部的に強く結合して当該内部に留まっており、他の材料と混合してもその結合性は極めて小さい性質を有すること(特許第5333976号等参照)、更に既述した本発明の高電子濃度領域とリード線との間の経路(経路1と、経路2とが並列)の改善によると推測される。
Conversion efficiency of solar cells
Fig. 13 (a) Ag 100%, NTA 0% Average of about 17.0%
Fig. 13 (b) Ag 50%, NTA 50% Average of about 17.0%
13 (c) Ag 0%, NTA 100% Average 17.2%
As a result of trial manufacture, the conversion efficiency when solar cells are formed is almost the same at about 17.0% on average in FIG. 13 (a) and FIG. 13 (b) as materials for printing the bus bar electrode pattern. The result was obtained. Further, in FIG. 13C, an average conversion efficiency of about 17.2% was obtained. It can be seen from the initial experimental results that all of (a) to (c) in FIG. 13 are within the same conversion efficiency range, or that NTA 100% in (c) in FIG. NTA glass is composed of vanadium, barium, and iron. In particular, iron is strongly bonded internally and stays in the interior, and its bonding property is extremely small even when mixed with other materials. (See Japanese Patent No. 5333976 and the like), and it is presumed to be due to the improvement of the path between the high electron concentration region of the present invention and the lead wire (path 1 and path 2 are in parallel).

図14および図15は、本発明の説明図(バスバー電極)を示す。   14 and 15 are explanatory diagrams (bus bar electrodes) of the present invention.

図14の(a)および図14の(b)はNTA 50%、Ag50%のものであって、図14の(a)は全体平面図を示し、図14の(b)は拡大図を示す。図15の(c)はNTA 100% Ag 0%のものであって、図15の(c)は拡大図を示す。   14 (a) and 14 (b) are NTA 50% and Ag 50%, FIG. 14 (a) shows an overall plan view, and FIG. 14 (b) shows an enlarged view. . FIG. 15 (c) shows NTA 100% Ag 0%, and FIG. 15 (c) shows an enlarged view.

図14の(a)および図14の(b)において、バスバー電極15は、図14の(a)の全体平面図に示すように、長いバー状の電極であって、これを光学顕微鏡で拡大すると図14の(b)に示すような構造が観察された。   14 (a) and 14 (b), the bus bar electrode 15 is a long bar-shaped electrode as shown in the overall plan view of FIG. 14 (a), and this is enlarged by an optical microscope. Then, a structure as shown in FIG. 14B was observed.

図14の(b)において、バスバー電極15は、従来のAgと鉛ガラスのフリットで焼成した場合にはAgが均一に分散していたが、本発明のAgとNTAガラスのフリットで焼成(長くても1分以内、1〜3秒以上の焼成)した場合には当該図14の(b)に示すように、バスバー電極15の中央部分にAgが集まって形成されることが判明した。そのため、発明の効果の欄で説明したように、AgにNTAガラスを混入して短時間焼成(長くても1分、1〜3秒以上の焼成)するとAgが中央部分に集まって導電性が向上し(従来はAgは均一に分散していた場合に比較して導電性が向上し)、かつNTAガラス自身も導電性を有することなどの総合的な作用によりAgの割合を減らしてNTAガラスを増やしても、太陽電池として製造した場合の変換効率は既述したように約16.9%と実験ではほぼ同じ結果が得られた。   In FIG. 14 (b), the bus bar electrode 15 was fired with the conventional Ag and NTA glass frit when it was fired with the conventional Ag and lead glass frit. In the case of firing within 1 minute for 1 to 3 seconds or more, it has been found that Ag is collected and formed in the central portion of the bus bar electrode 15 as shown in FIG. Therefore, as explained in the column of the effect of the invention, when NTA glass is mixed with Ag and fired for a short time (at least 1 minute, firing for 1 to 3 seconds or more), Ag collects in the central portion and becomes conductive. NTA glass is improved by reducing the Ag ratio due to comprehensive actions such as improved (conventionally improved Ag compared to the case where Ag was dispersed uniformly in the past) and NTA glass itself also has conductivity. As described above, the conversion efficiency when manufactured as a solar cell was about 16.9% even in the experiment.

尚、焼成温度は、500℃から900℃であるが、太陽電池として作成した場合に最適な温度を実験により決定することが必要である。低すぎても高すぎても図14の(b)のような構造が得られず、実験で決定することが必要である。   The firing temperature is 500 ° C. to 900 ° C., but it is necessary to determine the optimum temperature by experiment when it is produced as a solar cell. If it is too low or too high, the structure as shown in FIG. 14B cannot be obtained, and it is necessary to determine by experiment.

図15の(c)において、バスバー電極15は、図示の中央部分の横方向の幅の広いバー状の電極であって、本発明に係るNTA 100%の拡大写真の1例を示す。   In FIG. 15C, the bus bar electrode 15 is a bar-shaped electrode having a wide lateral width at the center portion shown in the figure, and shows an example of an enlarged photograph of 100% NTA according to the present invention.

この図15の(c)のバスバー電極15は、縦方向に幅の狭いフィンガー電極14が当該バスバー電極15を突き抜けて上側に少し突出した部分があり、かつ当該突出した部分の周囲が元のフィンガー電極14の幅よりも太くなっていることが判明する。そして、図示のバスバー電極15の上に、当該バスバー電極15の幅と同じ、若干小さい、あるいは若干大きい幅で、後述する図16で詳細に説明するように、超音波半田付けすることにより、既述した経路1(光電子濃度領域12、フィンガー電極14、バスバー電極15、リード線17の経路1)および経路2(光電子濃度領域12、フィンガー電極14、リード線17の経路2)の両経路で高濃度電子領域と当該リード線とを導電接続し、電子(電流)の損失を低減して外部に効率的に取り出すことが可能となり、図14の(a)、(b)とほぼ同じ変換効率、あるいは若干高い変換効率(約17.2%)が得られた。   The bus bar electrode 15 in FIG. 15C has a portion in which the finger electrode 14 narrow in the vertical direction penetrates the bus bar electrode 15 and slightly protrudes upward, and the periphery of the protruding portion is the original finger. It turns out that it is thicker than the width of the electrode 14. Then, ultrasonic soldering is performed on the bus bar electrode 15 as shown in FIG. 16 to be described later in detail with a width that is the same as the width of the bus bar electrode 15, slightly smaller or slightly larger. High in both paths 1 (path 1 of photoelectron concentration region 12, finger electrode 14, bus bar electrode 15, lead wire 17) and path 2 (path 2 of photoelectron concentration region 12, finger electrode 14, lead wire 17) described above. The concentration electron region and the lead wire are conductively connected to reduce the loss of electrons (current) and can be efficiently extracted to the outside. The conversion efficiency is substantially the same as that shown in FIGS. Alternatively, a slightly high conversion efficiency (about 17.2%) was obtained.

尚、焼成温度は、図14の(a)、(b)とほぼ同じ500℃から900℃であるが、太陽電池として作成した場合に最適な温度を実験により決定することが必要である。低すぎても高すぎても図15の(c)のような構造が得られず、実験で決定することが必要である。   The firing temperature is about 500 ° C. to 900 ° C., which is almost the same as that shown in FIGS. 14A and 14B, but it is necessary to determine an optimum temperature by experiment when it is fabricated as a solar cell. If it is too low or too high, the structure as shown in FIG. 15C cannot be obtained, and it is necessary to determine by experiment.

図16は、本発明の説明図(超音波半田付け)を示す。これは、既述した図15の(c)のNTA 100% の場合のものである(尚、同様に、図14の(a)、(b)に適用してもよい)。   FIG. 16 shows an explanatory diagram (ultrasonic soldering) of the present invention. This is the case of NTA 100% in FIG. 15C described above (in the same manner, it may be applied to FIGS. 14A and 14B).

図16の(a)は、フィンガー電極14を焼成した後の状態を示す。   FIG. 16A shows a state after the finger electrode 14 is fired.

図16の(b)は、図16の(a)のバスバー電極15の上に、点線で示す、ここでは、若干大きめ(あるいは同じ、あるいは小さくてもよい)のリード線17を半田付けする従来の例を示す。この従来の例では、通常の半田付けで行うので、フィンガー電極14が突出した部分(Ag)とリード線17とは半田接合するが、フィンガー電極14の突出していない部分(NTA100%の部分)とリード線17とは十分に半田接合しなく、機械的強度が十分ではない。一方、後述する図16の(c)の超音波半田付けした場合には、半田接合し、機械的強度が大幅に向上した。   FIG. 16B shows a conventional method in which a slightly larger (or the same or smaller) lead wire 17 is soldered on the bus bar electrode 15 shown in FIG. An example of In this conventional example, since normal soldering is performed, the portion (Ag) where the finger electrode 14 protrudes and the lead wire 17 are soldered together, but the portion where the finger electrode 14 does not protrude (portion of NTA 100%) The lead wire 17 is not sufficiently soldered and the mechanical strength is not sufficient. On the other hand, when ultrasonic soldering of FIG. 16C described later was performed, solder bonding was performed, and the mechanical strength was greatly improved.

図16の(c)は、図16の(a)のバスバー電極15(図15の(c)のバスバー電極15)の上に、点線で示す、若干大きめのリード線17を超音波半田付けする本発明の例を示す。この本発明の例では、超音波半田付けで行うので、フィンガー電極14が突出した部分(Ag)とリード線17とは半田接合し、更に、フィンガー電極14のない部分(NTA100%の部分)とリード線17とも半田接合し、機械的強度が大幅に向上すると共に、既述した経路2(高電子濃度領域12、フィンガー電極14、バスバー電極15、リード線17の経路2)の導電性が向上した。   In FIG. 16C, a slightly larger lead wire 17 indicated by a dotted line is ultrasonically soldered on the bus bar electrode 15 in FIG. 16A (the bus bar electrode 15 in FIG. 15C). The example of this invention is shown. In this example of the present invention, since the soldering is performed by ultrasonic soldering, the portion (Ag) from which the finger electrode 14 protrudes and the lead wire 17 are soldered together, and further, the portion without the finger electrode 14 (portion of NTA 100%) The lead wire 17 is also soldered to significantly improve the mechanical strength, and the conductivity of the path 2 (the high electron concentration region 12, the finger electrode 14, the bus bar electrode 15, the path 2 of the lead wire 17) described above is improved. did.

図17は、本発明の測定例(効率)を示す。本図17は、既述したバスバー電極15について、NTAを100%から70%に変化させたときの良好な測定例であって、図17の横軸はサンプルの番号を示し、縦軸は効率(%)を示す。サンプルは、
・NTA 100% Ag 0%
・NTA 90% Ag 10%
・NTA 80% Ag 20%
・NTA 70% Ag 30%
とし、これらで太陽電池を作成し、各測定結果(効率)は図示の通りであった。尚、初期実験であるので、測定結果には図示のようにかなりのバラツキがあるが、16.9から17.5の範囲内に収まっており、NTA 100%でバスバー電極15を作成(つまり、Agなしで作成)して太陽電池を製造した場合でも、NTA 70%(あるいは、更に80%、90%)に比して同程度ないし若干高い効率が得られ、NTA 100%でも使えることが判明した(発明者らはこの事実を発見した)。
FIG. 17 shows a measurement example (efficiency) of the present invention. FIG. 17 is a good measurement example when the NTA is changed from 100% to 70% for the bus bar electrode 15 described above. The horizontal axis in FIG. 17 indicates the sample number, and the vertical axis indicates the efficiency. (%). sample,
・ NTA 100% Ag 0%
・ NTA 90% Ag 10%
・ NTA 80% Ag 20%
・ NTA 70% Ag 30%
These were used to make solar cells, and each measurement result (efficiency) was as shown. In addition, since it is an initial experiment, there are considerable variations in the measurement results as shown in the figure, but they are within the range of 16.9 to 17.5, and the bus bar electrode 15 is created with NTA 100% (that is, Even when a solar cell is manufactured without using Ag), it is found that the efficiency is comparable or slightly higher than that of NTA 70% (or 80%, 90%) and can be used even with NTA 100%. (The inventors found this fact).

本発明の1実施例構成図である。1 is a configuration diagram of one embodiment of the present invention. 本発明の1実施例構成図(その2)である。FIG. 3 is a configuration diagram (Part 2) of an embodiment of the present invention. 本発明の説明図(半田材料等)である。It is explanatory drawing (solder material etc.) of this invention. 本発明の動作説明フローチャートである。It is an operation | movement explanatory flowchart of this invention. 本発明の動作説明フローチャート(続き)である。It is an operation | movement description flowchart (continuation) of this invention. 本発明の超音波半田付け装置の特性例である。It is an example of the characteristic of the ultrasonic soldering apparatus of this invention. 本発明の超音波半田付け例(NTA100%)である。It is an example of ultrasonic soldering (NTA 100%) of the present invention. 本発明の超音波半田付け例(NTA50%)である。It is an example of ultrasonic soldering (NTA 50%) of the present invention. 本発明の1実施例構造図(工程の完成図:断面図)である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 本発明の動作説明フローチャートである。It is an operation | movement explanatory flowchart of this invention. 本発明の詳細工程説明図(その1)である。It is detailed process explanatory drawing (the 1) of this invention. 本発明の詳細工程説明図(その2)である。It is detailed process explanatory drawing (the 2) of this invention. 本発明の詳細説明図(バスバー電極の焼成)である。It is detailed explanatory drawing (baking of a bus-bar electrode) of this invention. 本発明の説明図(バスバー電極)である。It is explanatory drawing (bus-bar electrode) of this invention. 本発明の説明図(バスバー電極)である。It is explanatory drawing (bus-bar electrode) of this invention. 本発明の説明図(超音波半田付け)である。It is explanatory drawing (ultrasonic soldering) of this invention. 本発明の測定例(効率)である。It is a measurement example (efficiency) of the present invention. 従来技術の説明図である。It is explanatory drawing of a prior art.

1:シリコン基板
2:裏面電極
3:窒化膜
4:フィンガー電極
5:バスバー電極
6:半田
7:リボン
71:銅
72:プリ半田
21:予備加熱台
22:超音波半田コテ
23:超音波発信機及びヒーター
24:半田コテ先部分
11:シリコン基板
12:高電子濃度領域(拡散ドーピング)
13:絶縁膜(窒化シリコン膜)
14:電子取出口(フィンガー電極)
15:バスバー電極
16:裏面電極
17:リード線
1: Silicon substrate 2: Back electrode 3: Nitride film 4: Finger electrode 5: Bus bar electrode 6: Solder 7: Ribbon 71: Copper 72: Pre-solder 21: Preheating table 22: Ultrasonic soldering iron 23: Ultrasonic transmitter And heater 24: soldering iron tip 11: silicon substrate 12: high electron concentration region (diffusion doping)
13: Insulating film (silicon nitride film)
14: Electron outlet (finger electrode)
15: Bus bar electrode 16: Back electrode 17: Lead wire

Claims (10)

基板上の任意部分にペーストを塗布して焼結した部分に半田付けする半田付け方法において、
Ag、Cu、Pbを含まないペーストを任意部分に塗布して焼結した基板あるいは該基板上のペースト部分を、半田の溶融温度よりも低い第1の所定温度に予備加熱する予備加熱ステップと、
前記予備加熱ステップで予備加熱した第1の所定温度の前記基板のペースト部分に、当接する半田コテ先部分に超音波を印加した状態で供給した半田が溶融する、超音波を印加しないときに半田が溶融する温度よりも低い、第2の所定温度に調整した状態で、前記半田コテ先部分を前記ペースト部分に当接してあるいは当接しながら移動して当該ペースト部分に半田付けする超音波半田付けステップと
を有することを特徴とする超音波半田付け方法。
In a soldering method of applying paste to an arbitrary part on a substrate and soldering to a sintered part,
A preheating step of preheating a substrate which is formed by applying a paste containing no Ag, Cu or Pb to an arbitrary portion and sintering the paste or a paste portion on the substrate to a first predetermined temperature lower than the melting temperature of the solder;
Solder supplied in a state where ultrasonic waves are applied to the soldering iron tip portion in contact with the paste portion of the substrate at the first predetermined temperature preheated in the preheating step is melted. Ultrasonic soldering in which the soldering iron tip part is in contact with or in contact with the paste part and is soldered to the paste part in a state adjusted to a second predetermined temperature lower than the melting temperature of the solder And an ultrasonic soldering method.
前記第1の所定温度を、室温以上から前記第2の所定温度の範囲内の温度としたことを特徴とする請求項1記載の超音波半田付け方法。   2. The ultrasonic soldering method according to claim 1, wherein the first predetermined temperature is a temperature within a range from room temperature to the second predetermined temperature. 前記第2の所定温度を、超音波を印加しないときに半田が溶融する温度よりも10から40℃低い範囲内の温度としたことを特徴とする請求項1ないし請求項2のいずれかに記載の超音波半田付け方法。   3. The second predetermined temperature is set to a temperature within a range of 10 to 40 ° C. lower than a temperature at which solder melts when no ultrasonic wave is applied. 3. Ultrasonic soldering method. 前記Ag,Cu、Pbを含まないペーストとして、Ag,Cu、Pbを含まなくかつバナジン酸塩ガラスを100wt%、あるいはCu,Pbを含まなくかつAgを0以上から50wt%を含み残りをバナジン酸塩ガラス、としたNTAペーストとしたことを特徴とする請求項1から請求項3のいずれかに記載の超音波半田付け方法。   As a paste containing no Ag, Cu, or Pb, 100 wt% of vanadate glass without containing Ag, Cu, or Pb, or 100 wt% of vanadate glass, and containing 0 to 50 wt% of Ag and the rest of vanadic acid The ultrasonic soldering method according to any one of claims 1 to 3, wherein the salt glass is an NTA paste. 前記半田は、少なくともSn、Zn、Clを含むことを特徴とする請求項1から請求項4のいずれかに記載の超音波半田付け方法。   The ultrasonic soldering method according to claim 1, wherein the solder contains at least Sn, Zn, and Cl. 前記超音波半田付けステップで半田付けする際に、ペースト部分に当該ペースト中の有機溶剤が残留しないように予め乾燥あるいは加熱乾燥したことを特徴とする請求項1から請求項5のいずれかに記載の超音波半田付け方法。   6. The solder according to any one of claims 1 to 5, wherein when the soldering is performed in the ultrasonic soldering step, the organic solvent in the paste does not remain in the paste portion in advance or is dried by heating. Ultrasonic soldering method. 前記基板上に塗布するペースト部分が、可及的に滑らかになるようにして焼結したことを特徴とする請求項1から請求項6のいずれかに記載の超音波半田付け方法。   The ultrasonic soldering method according to any one of claims 1 to 6, wherein a paste portion to be coated on the substrate is sintered so as to be as smooth as possible. 前記超音波は、20KHzから150KHzの周波数としたことを特徴とする請求項1から請求項7のいずれかに記載の超音波半田付け方法。   The ultrasonic soldering method according to claim 1, wherein the ultrasonic wave has a frequency of 20 KHz to 150 KHz. 前記基板上のペーストを塗布する部分を、太陽電池の電極の部分としたことを特徴とする請求項1から請求項8のいずれかに記載の超音波半田付け方法。   9. The ultrasonic soldering method according to claim 1, wherein a portion of the substrate to which the paste is applied is an electrode portion of a solar cell. 基板上の任意部分にペーストを塗布して焼結した部分に半田付けする半田付け装置において、
Ag、Cu、Pbを含まないペーストを任意部分に塗布して焼結した基板あるいは該基板上のペースト部分を、半田の溶融温度よりも低い第1の所定温度に予備加熱する予備加熱手段と、
前記予備加熱手段で予備加熱した第1の所定温度の前記基板のペースト部分に、当接する半田コテ先部分に超音波を印加した状態で供給した半田が溶融する、超音波を印加しないときに半田が溶融する温度よりも低い、第2の所定温度に調整した状態で、前記半田コテ先部分を前記ペースト部分に当接してあるいは当接しながら移動して当該ペースト部分に半田付けする超音波半田付け手段と
を備えたことを特徴とする超音波半田付け装置。
In a soldering device that applies paste to an arbitrary part on a substrate and solders it to a sintered part,
A preheating means for preheating a substrate that is formed by applying a paste not containing Ag, Cu, or Pb and sintering the paste or a paste portion on the substrate to a first predetermined temperature lower than the melting temperature of the solder;
Solder supplied in a state where ultrasonic waves are applied to a soldering iron tip portion in contact with the paste portion of the substrate at the first predetermined temperature preheated by the preheating means melts, and solder is applied when no ultrasonic waves are applied. Ultrasonic soldering in which the soldering iron tip part is in contact with or in contact with the paste part and is soldered to the paste part in a state adjusted to a second predetermined temperature lower than the melting temperature of the solder And an ultrasonic soldering apparatus.
JP2015209440A 2015-10-25 2015-10-25 Ultrasonic soldering method and ultrasonic soldering apparatus Expired - Fee Related JP6696665B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015209440A JP6696665B2 (en) 2015-10-25 2015-10-25 Ultrasonic soldering method and ultrasonic soldering apparatus
TW105118748A TWI630049B (en) 2015-10-25 2016-06-15 Ultrasonic soldering method and ultrasonic soldering apparatus
KR1020160078529A KR20170048135A (en) 2015-10-25 2016-06-23 Method of ultrasonic soldering and ultrasonic soldering device
CN201610537479.1A CN106607644B (en) 2015-10-25 2016-07-08 Ultrasonic welding method and ultrasonic welding device
PCT/JP2016/079948 WO2017073299A1 (en) 2015-10-25 2016-10-07 Ultrasonic soldering method and ultrasonic soldering device
KR1020180167094A KR102002796B1 (en) 2015-10-25 2018-12-21 Method of ultrasonic soldering and ultrasonic soldering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015209440A JP6696665B2 (en) 2015-10-25 2015-10-25 Ultrasonic soldering method and ultrasonic soldering apparatus

Publications (2)

Publication Number Publication Date
JP2017080753A true JP2017080753A (en) 2017-05-18
JP6696665B2 JP6696665B2 (en) 2020-05-20

Family

ID=58614773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015209440A Expired - Fee Related JP6696665B2 (en) 2015-10-25 2015-10-25 Ultrasonic soldering method and ultrasonic soldering apparatus

Country Status (5)

Country Link
JP (1) JP6696665B2 (en)
KR (2) KR20170048135A (en)
CN (1) CN106607644B (en)
TW (1) TWI630049B (en)
WO (1) WO2017073299A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020129410A1 (en) * 2018-12-18 2021-10-14 アートビーム有限会社 Ultrasonic soldering equipment and ultrasonic soldering method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108672867B (en) * 2018-05-28 2021-03-02 东莞市新玛博创超声波科技有限公司 Fluxing agent-free pulse ultrasonic low-temperature brazing method for copper-based material
TWI699899B (en) * 2018-06-26 2020-07-21 日商亞特比目有限公司 Solar cell and method for manufacturing solar cell
CN108838507A (en) * 2018-06-28 2018-11-20 北京铂阳顶荣光伏科技有限公司 A kind of welding method of busbar

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3205423B2 (en) * 1993-03-25 2001-09-04 黒田電気株式会社 Soldering method and equipment
JP3232963B2 (en) * 1994-10-11 2001-11-26 株式会社日立製作所 Lead-free solder for connecting organic substrates and mounted products using the same
DE19842276A1 (en) * 1998-09-16 2000-03-30 Bosch Gmbh Robert Paste for welding ceramics to metals and method for making a welded joint
US6464324B1 (en) * 2000-01-31 2002-10-15 Picojet, Inc. Microfluid device and ultrasonic bonding process
JPWO2004039526A1 (en) * 2002-11-01 2006-02-23 有限会社 テクノラボ Soldering method and device
US20060091184A1 (en) * 2004-10-28 2006-05-04 Art Bayot Method of mitigating voids during solder reflow
JP2009072827A (en) * 2007-08-24 2009-04-09 Hitachi Metals Ltd Method of manufacturing member to be formed with solder layer
DE102008037613A1 (en) * 2008-11-28 2010-06-02 Schott Solar Ag Method of making a metal contact
JP2010142848A (en) * 2008-12-19 2010-07-01 Ijr:Kk Brazing method and brazing apparatus
JP2011005545A (en) * 2009-05-25 2011-01-13 Hitachi Metals Ltd Solder alloy, and soldered body using the same
US20110180139A1 (en) * 2010-01-25 2011-07-28 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
US20140158196A1 (en) * 2011-07-25 2014-06-12 Yoshiaki Kurihara Element and photovoltaic cell
DE102011052256B4 (en) * 2011-07-28 2015-04-16 Hanwha Q.CELLS GmbH Process for producing a solar cell
CN102751359A (en) * 2012-07-05 2012-10-24 合肥海润光伏科技有限公司 Crystalline silicon solar battery slice string and manufacturing method thereof
JP5958701B2 (en) * 2012-07-17 2016-08-02 デクセリアルズ株式会社 Wiring material, solar cell module, and method for manufacturing solar cell module
CN103107242B (en) * 2013-01-29 2015-12-02 上海交通大学 Prepare the method for pucherite solar cell on the glass substrate
CN103418876A (en) * 2013-08-21 2013-12-04 宁波海融电器有限公司 Ultrasonic soldering device
CN103681922A (en) * 2013-11-26 2014-03-26 青岛宇泰新能源科技有限公司 Method for connecting solar cells
US20150194546A1 (en) * 2014-01-09 2015-07-09 Heraeus Precious Metals North America Conshohocken Llc Low-silver electroconductive paste
CN203875447U (en) * 2014-05-27 2014-10-15 张曹 Ultrasonic wave low-temperature brazing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020129410A1 (en) * 2018-12-18 2021-10-14 アートビーム有限会社 Ultrasonic soldering equipment and ultrasonic soldering method

Also Published As

Publication number Publication date
WO2017073299A1 (en) 2017-05-04
CN106607644B (en) 2020-02-14
JP6696665B2 (en) 2020-05-20
TW201714691A (en) 2017-05-01
CN106607644A (en) 2017-05-03
TWI630049B (en) 2018-07-21
KR20190000346A (en) 2019-01-02
KR102002796B1 (en) 2019-07-23
KR20170048135A (en) 2017-05-08

Similar Documents

Publication Publication Date Title
JP5116363B2 (en) Manufacturing method of conductor wire
KR102002796B1 (en) Method of ultrasonic soldering and ultrasonic soldering device
KR20200138136A (en) Solar cell and process of manufacture of solar cell
CN104103335A (en) Metal wire for solar energy battery back electrode and preparation method thereof, solar energy battery sheet and preparation thereof, and solar energy battery assembly
WO2018012248A1 (en) Solar cell and solar cell manufacturing method
JP6932659B2 (en) Solar cells and solar cell manufacturing methods
JP5433729B2 (en) Manufacturing method of solar cell
JP7058390B2 (en) Solar cells and methods for manufacturing solar cells
KR102314772B1 (en) Solar cell and manufacturing method of solar cell
CN106571171B (en) NTA cream
KR101791480B1 (en) Solar cell and process of manufacture of solar cell
TWI720664B (en) Solar cell and method for manufacturing solar cell
JP2020141141A (en) Solar battery and manufacturing method for solar battery
TWI714127B (en) Solar cell and method for manufacturing solar cell
TWI699899B (en) Solar cell and method for manufacturing solar cell
CN110379868A (en) The manufacturing method of solar cell and solar cell
JP2009194013A (en) Method of forming baked electrode and method of manufacturing photoelectric conversion element using same
CN102856428A (en) Wire with active solder coating and method of using same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181003

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191016

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191210

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200407

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200410

R150 Certificate of patent or registration of utility model

Ref document number: 6696665

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees