CN106607644A - Ultrasonic soldering method and ultrasonic soldering device - Google Patents
Ultrasonic soldering method and ultrasonic soldering device Download PDFInfo
- Publication number
- CN106607644A CN106607644A CN201610537479.1A CN201610537479A CN106607644A CN 106607644 A CN106607644 A CN 106607644A CN 201610537479 A CN201610537479 A CN 201610537479A CN 106607644 A CN106607644 A CN 106607644A
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- China
- Prior art keywords
- solder
- cream
- bus
- temperature
- electrode
- Prior art date
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- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000005476 soldering Methods 0.000 title abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims abstract description 113
- 229910052709 silver Inorganic materials 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 229910052745 lead Inorganic materials 0.000 claims abstract description 17
- 239000000155 melt Substances 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 239000006071 cream Substances 0.000 claims description 66
- 238000003466 welding Methods 0.000 claims description 49
- 238000002604 ultrasonography Methods 0.000 claims description 38
- 239000011521 glass Substances 0.000 claims description 37
- 238000002360 preparation method Methods 0.000 claims description 18
- 238000005219 brazing Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 20
- 239000004332 silver Substances 0.000 description 20
- 238000002474 experimental method Methods 0.000 description 17
- 239000010949 copper Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 238000000605 extraction Methods 0.000 description 14
- 239000005355 lead glass Substances 0.000 description 14
- 238000010304 firing Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 238000010422 painting Methods 0.000 description 12
- 238000005245 sintering Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000012144 step-by-step procedure Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/06—Soldering, e.g. brazing, or unsoldering making use of vibrations, e.g. supersonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
- B23K20/106—Features related to sonotrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/02—Soldering irons; Bits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
The present invention relates to an ultrasonic soldering method and an ultrasonic soldering device. The purpose of the present invention is to make it possible to solder a section to be soldered to an electrode or similar that does not include Ag or Pb, or includes a reduced amount thereof. The present invention has a preheating step in which either a substrate to which a paste that does not include Ag, Cu, or Pb has been applied to an arbitrary section thereof and sintered, or the paste section on the substrate is preheated to a first prescribed temperature that is lower than the melting point of a solder; and an ultrasonic soldering step in which a soldering iron tip section is brought into contact with, or moved while in contact with, the paste section of the substrate that was preheated to the first prescribed temperature in the preheating step, while the soldering iron tip section that contacts the paste section is adjusted to a second prescribed temperature, said second prescribed temperature allowing the supplied solder to melt while ultrasonic waves are applied to the soldering iron tip section and, while ultrasonic waves are not applied, being lower than the temperature at which the solder melts, thereby soldering the paste section.
Description
Technical field
The present invention relates to the coating cream on substrate and it is sintered after the ultrasonic welding method that welded of part
And ultrasonic brazing unit.
Background technology
In the past, it is using the semiconductor technology of the leading role in 20th century as base using the solar cell of one of regenerative resource
Plinth and carry out its exploitation.It is the important exploitation of the global level for affecting human survival.The exploitation problem is not only the sun
Light is converted into the efficiency of electric energy, also faces to cut down manufacturing cost and non-harmful problem while being in progress.Realize these
Set about carrying out, cut down or do not use the usage amount particular importance of silver (Ag) and the lead (pb) used in electrode.
Generally, the construction of solar cell, as shown in the plane graph of Figure 18 (a) and the profile of Figure 18 (b), by following each
Key element is constituted：The silicon substrate 43 of N-type/p-type, is that the sunlight energy is converted into into electric energy；Silicon nitride 45, with preventing silicon substrate
The function of the surface reflection of plate 43 and for insulator film；Finger electrode (finger electrode) 42, takes out in silicon substrate
Produced electronics in 43；Bus-bar electrode (bus bar electrode) 41, with finger electrode 42 taken out electricity is collected
Son；And extraction wire 47, it is taken out to outside by collecting to the electronics of bus-bar electrode 41.
Wherein, bus-bar electrode (bus electrode, bus electrode) 41 and finger electrode 42 using silver-colored (silver paste) and
Lead (lead glass), preferably will not use silver or cut down the usage amount of silver, what is more, the usage amount of lead (lead glass) is cut down or
Do not use so as to be formed as inexpensive and nuisanceless.
Particularly, to form above-mentioned electrode (bus-bar electrode 41, finger electrode 42) to sinter, in the past using silver paste (or
A part of copper cream), in the silver paste, due to containing silver-colored composition (powder), glass ingredient (lead glass), organic material composition, organic
Solvent composition, resinous principle, therefore expect not use wherein the above two silver-colored composition (powder) and glass ingredient (lead glass),
And change by substitute replace (for example replacing with NTA glass (in aftermentioned explanation)), then at this Jing screen painting and sintering and formed
Electrode (without Ag, Cu, Pb) welding extraction wire etc..
The content of the invention
[the invention problem to be solved]
The electrode (bus-bar electrode 41 and finger electrode 42 etc.) for constituting above-mentioned such as solar cell is formed to sinter,
The silver-colored composition (powder) and glass ingredient (lead glass) in conventional silver paste is not used, is changed by substitute (such as NTA glass)
Displacement, wherein, by do not use or cuts down silver-colored, lead NTA cream (Japanese Patent Application the 2015-191857th) is sintered and the electricity that formed
In the part of pole, because without Ag etc. (or only Ag slightly), generation can not carry out the situation of conventional welding.
Expect to have and solve this situation, and welded in the part (electrode etc.) for having no or only Ag slightly etc..
[means to solve the problem]
The present inventors, discovery 100% NTA glass (vanadate glass) described later used in by cream, and by
The cream (hereinafter referred to as cream) that do not contain or be only mixed into Ag slightly and glass (lead glass) is sintered and bus electrode for being made etc.
On the method welded.It has also been found that the solar cell welded by the method is compared to the feelings using conventional silver paste
Shape, can be made with the solar cell compared with excellent specific property (in aftermentioned explanation).In the sintered part of the NTA cream (electrode etc.) weldering
The maneuver for connecing is not limited to bus electrode of above-mentioned solar cell etc., also can be made when electrode etc. is made in screen painting etc.
Welding maneuver.
The present invention, can be by the usage amount for not using or being only mixed into silver and lead (lead glass) slightly according to these discoveries
Cut down or the cream (such as NTA cream) that do not use it is sintered and on the bus electrode (bus-bar electrode) of such as solar cell that is made
Ultrasonic bonding described later is carried out, with the solder on surface (namely plated solder) and extraction wire etc. so that such as
Conventional is mounted for possibility, and this is as a result, it is possible to for the electricity that Ag and lead or mixed volume Jing reductions are not contained in soldered part
Welded pole.
Therefore, the present invention be a kind of welding method, be on substrate arbitrary portion coating cream and it is sintered after portion
Divide the welding method welded, and with following step：Preparation heating stepses, are not contained to being coated with arbitrary portion
The cream of Ag, Cu, Pb and it is sintered after substrate or cream part on the substrate, preparation is heated to the melt temperature less than solder
First assigned temperature；And ultrasonic welding step, it is that preparation is heated to the first specified temperature in foregoing preliminary heating stepses
The cream part of the aforesaid base plate of degree, the state of the solder tip partial adjustment to the second assigned temperature by abutting, makes aforementioned
Solder tip part is connected to aforementioned cream part, or moves while aforementioned cream part is connected to, and to aforementioned cream
Welded part；Second assigned temperature is that the solder supplied in the state of ultrasound wave is applied produces melting, and low
The temperature of solder meeting fusion welding when ultrasound wave is not applied.
Now, the first assigned temperature is set to into room temperature with the temperature in up to the second specified for temperature ranges.
Also, aforementioned second assigned temperature is set to into 10 to 40 DEG C of models low compared with the temperature that solder when not applying ultrasound wave can be melted
Enclose interior temperature.
Also, as the cream for not containing Ag, Cu, Pb, be set to not contain Ag, Cu, Pb and vanadate glass is 100wt%, or,
Do not contain Cu, Pb and containing Ag be 0 with up to 50wt% remaining as the NTA cream of vanadate glass.
Also, solder at least contains Sn, Zn, Cl.
Also, when being welded in ultrasonic welding step, in order that the organic solvent in cream is not remained, in advance to this
Cream part is dried or heat drying.
Also, become smooth mode as much as possible with the cream part coated on substrate being sintered.
Also, ultrasound wave is set to the frequency of 20KHz to 150KHz.
[invention effect]
The present invention as described above, by using the NTA cream of the NTA glass 100% of such as electric conductivity for not containing Ag, Cu, Pb,
Even NTA glass sets to the NTA cream of 50% or so (also can more reduce content) and fires electricity to replace conventional silver (or Cu) cream
Pole, and ultrasonic bonding is carried out in the electrode, even if discovery does not use the silver in conventional silver paste or cuts down its usage amount, and
Cut down the utilization of lead (lead glass) or do not use, also cream sintering part can be welded and extraction wire etc. is installed.Whereby,
With following characteristics.
1st is in order to form the bus-bar electrode (bus electrode) of such as solar cell, using belonging to electric conductivity vanadate
The NTA glass (with reference to Japan registration trade mark the 5009023rd, Japanese Patent No. 5333976) 100% of glass, further for
To 50% or so, to replace silver paste, even if not using Ag or cutting down its usage amount, the usage amount of lead (lead glass) is more even cut down
Or do not use, the ultrasonic bonding that can also pass through the present invention is welded to cream sintering part.
2nd using NTA glass 100% to 50% or so by for example bus-bar electrode (bus electrode) (also can will more be subtracted
Few content), by the experimental result of current initial stage it is available almost identical with the efficiency that solar energy is converted to electron energy or
Slightly higher performance is formed (with reference to Figure 17) as the electrode of bus-bar electrode effect.It is because NTA glass forms as follows to investigate this
Person is reached：(1) with electric conductivity；(2) (conflux electricity with the bus-bar electrode to form finger electrode by using NTA glass
Pole) above for mutually level part or pass and in the part for projecting above, and with the supersonic welding of the invention of wire
Fetch these parts of engagement, as a result, high electron concentration field is directly connected with wire with finger electrode；And, other factors (ginseng
As usual such as following " 3 ").
3rd is different from conventional, and it is the formation that the cream for using contains the formation with finger electrode and bus-bar electrode
For different frits.In the past, in the formation of finger electrode, it is necessary to produce the phenomenon for referred to as burning (fire through).
This be by using as silver sintering aid frit in component molecules, such as the effect of the lead molecule in lead glass,
In the way of making its breakthrough Jing be formed in the silicon nitride film on the top layer of silicon substrate and form finger electrode, efficiently collect and generate
In the electronics of silicon substrate.However, in the formation of bus-bar electrode, and phenomenon need not be burnt.In the past, due to bus-bar electrode
Also the lead glass containing lead composition is used to be sintered as sintering aid, therefore the different bus-bar electrode of structure and silicon substrate
Plate can form the situation of electrically conduct road and the efficiency that changes reduction.Helped by forming used sintering in bus-bar electrode
Agent use will not occur the NTA glass for burning phenomenon, can eliminate the reduction of conversion efficiency.And, what is sintered with NTA cream
The part of bus-bar electrode, can take out electric charge with the ultrasonic bonding of present invention welding extraction wire.
Description of the drawings
Fig. 1 is one embodiment of the invention pie graph.
Fig. 2 is one embodiment of the invention pie graph (its 2).
Fig. 3 is the explanatory diagram (solder material etc.) of the present invention.
Fig. 4 is the action specification flow chart of the present invention.
Fig. 5 is the action specification flow chart (continuing) of the present invention.
Fig. 6 is the characteristic example of the ultrasonic brazing unit of the present invention.
Fig. 7 is the ultrasonic bonding example (NTA100%) of the present invention.
Fig. 8 is the ultrasonic bonding example (NTA50%) of the present invention.
Fig. 9 is that (step completes figure for one embodiment of the invention structural map：Profile).
Figure 10 is the action specification flow chart of the present invention.
Figure 11 is the step-by-step procedures figure (its 1) of the present invention.
Figure 12 is the step-by-step procedures figure (its 2) of the present invention.
Figure 13 is detailed description of the invention figure (firing of bus-bar electrode).
Figure 14 is the explanatory diagram (bus-bar electrode) (its 1) of the present invention.
Figure 15 is the explanatory diagram (bus-bar electrode) (its 2) of the present invention.
Figure 16 is the explanatory diagram (ultrasonic bonding) of the present invention.
Figure 17 is the measure example (efficiency) of the present invention.
Figure 18 is the explanatory diagram of prior art.
Primary clustering symbol description
1st, 11,43 silicon substrate
2nd, 16,46 backplate
3 nitride films
4th, 42 finger electrode
5 bus-bar electrodes
6 solders
7 bands
12 high electron concentration regions (diffusing, doping)
13 dielectric films (silicon nitride film)
14 electronics conveying ends (finger electrode)
15th, 41 bus-bar electrode
17 wires
21 preparation warm tables
22 ultrasound wave flatirons
23 ultrasonic transmitters and heater
24 solder tip parts
44 N/P diffusion layers
45 silicon nitrides
47 extraction wire electrodes
71 bronze medals
72 pre-welding materials.
Specific embodiment
[embodiment 1]
Fig. 1 represents one embodiment of the invention pie graph.Fig. 1 is the example of the ultrasonic bonding of the electrode of solar cell, under
State and will be described in detail as the example of the band 7 of extraction wire using the ultrasonic bonding on bus-bar electrode 5.Herein, surpass
Sound wave welding is included to electrode plated solder (extraction wire etc.), and to electrode welding wire etc., it is following also identical.
Fig. 1 (a) schematically shows the front view of the major part Jing after ultrasonic bonding, and Fig. 1 (b) schematically shows dotted line
The amplified side view in toroidal part.
In Fig. 1 (a) and (b), solar cell have by：The backplate 2 at the back side of silicon substrate 1 is arranged on, is then arranged
The PN layers produced in silicon substrate 1 are taken out in the positive nitride film 3 of silicon substrate 1, bus-bar electrode 5, in the form of to run through nitride film 3
Electronics finger electrode 4, with the band 7 of ultrasonic bonding of the Jing of solder 6 present invention, (extraction is led above finger electrode 4
Line) structure that constituted.Herein, it is schematically illustrated in above the bus-bar electrode 5 as electrode and 7 is surpassed strip with solder 6
Appearance when sound wave is welded.
With regard to bus-bar electrode 5, due to found by the present inventors do not contain Ag, Cu, Pb and vanadate glass sets
NTA cream (Japanese Patent Application the 2015-202461st) for 100wt% it is sintered and in the bus-bar electrode 5 that formed, completely not
Containing Ag, Cu, Pb, or, contain 0 with up to 50wt% remaining as vanadate glass institute structure by Cu, Pb and Ag is not contained
Into NTA cream sintering and in the bus-bar electrode that formed, Ag is less than 50%, is consequently belonging to using in the past common welding
Shi Wufa is welded or the extremely difficult electrode for carrying out.Particularly in the situation of the bus-bar electrode 5 for being entirely free of Ag, Cu, Pb,
Conventional welding cannot being carried out completely, and containing less than 50% situation in Ag, the only part containing Ag is solderable, other parts
Cannot then weld and mechanical strength is extremely weak, there is the situation of stripping.In the ultrasonic bonding of the present invention, discovery can be to NTA cream Jing
The part of sintering, i.e. to do not contain Ag, Cu, Pb etc. part or containing and the part that do not contain all carry out supersonic welding
(ultrasound wave plated solder) is connect, such as the result tested (with reference to the photo of Fig. 7, Fig. 8).
In fig. 2, solder 6 is that the solder of ultrasonic bonding is carried out above bus-bar electrode 5, and is at least to contain
The solder of Sn, Zn, Cl, with the melting of ultrasound wave solder tip part 24 of the present invention welder is carried out.
Band 7 is the extraction wire that electric charge is taken out to outside from bus-bar electrode 5, herein, above the band of copper
And following in advance additional pre-welding material 72, easy supersonic welding is connected on bus-bar electrode 5 by solder 6 to make the band 7 of copper 71.
The preparation mounting solar cell of warm table 21 is overall and preparation be heated to the first assigned temperature (it is more than room temperature, ultrasound wave
The temperature in the scope below temperature that solder can be melted during welding).By carrying out preparing heating to prepare warm table 21, converging
The welding portion of stream row's electrode 5, from the heat that the ultrasound wave solder tip part 24 of the ultrasonic brazing unit of non-accompanying drawing is supplied
Amount is only needed on a small quantity, can carry out ultrasonic bonding, and ultrasound wave soldering iron tip end with the ultrasonic brazing unit of low capacity
Points 24 temperature control becomes easy and can be smoothed out ultrasonic bonding smooth.
Then, according to the composition of Fig. 1, using Fig. 2 composition when carrying out ultrasonic bonding is explained.
Fig. 2 represents one embodiment of the invention pie graph (its 2).
Fig. 2 (a) schematically shows the side view of the major part of the solar cell corresponding to Fig. 1 (b), Fig. 2 (b) and (c)
Schematically show front view during bus-bar 5 ultrasonic bonding of electrode with ultrasound wave flatiron 22.Fig. 2 (b) is represented and is welded in solder 6
It is connected to the situation person of bus-bar electrode 5, i.e. the composition of plated solder situation on bus-bar electrode 5, Fig. 2 (c) is represented solder
The 6 situation persons that bus-bar electrode 5 is welded in the band 7 of Jing pre-welding materials, i.e. the situation of band 7 is welded on bus-bar electrode 5
Constitute.
Omit the description because Fig. 2 (a) is identical with Fig. 1 (b).
In Fig. 2 (b) and (c), ultrasound wave flatiron 22 represents 1 of the ultrasonic brazing unit of the present invention, and it is as schemed institute
Show, heat and supply the ultrasonic transmitter and heater of ultrasound wave by solder tip part 24, by solder tip part 24
23 constitutors (with reference to Fig. 6).The frequency in the range of 20KHz to 150KHz is usually used, and then uses 60KHz in an experiment
Person.Heating capacity depends on the temperature of preparation warm table 21, but in an experiment using 10W or so person (with automatic temperature-adjusting adjustment)
(using the capacity person of the thermal capacity obtained by the corresponding size according to ultrasonic bonding part (part of bus-bar electrode 5)).
Solder tip part 24 is used for the temperature of the ultrasonic bonding part for melting solder 6 and heating bus-bar electrode 5
Spend and carry out ultrasonic bonding.Solder tip part 24 using the pointed head of cylinder in an experiment as illustrated, be cut into 45 degree
The inclined-plane person of left and right, but not limited to this shape makes etc. to improve volume production, it is possible to use elliptical shape or arbitrary shape, enter
One step uses the rotary body of rotation or sliding stand of slip etc., as long as ultrasound can be involved into conduction of heat will extremely carry out ultrasonic bonding
Then any shape all may be used for part.
As Fig. 2 (b) composition, can be ultrasonic by being fed to the solder 6 of the solder tip part 24 of ultrasound wave flatiron 22
Wave soldering is connected on bus-bar electrode 5, and plated solder is carried out on bus-bar electrode 5.
Such as the composition of Fig. 2 (c), can be by being fed to the solder 6 and Jing of the solder tip part 24 of ultrasound wave flatiron 22
The supersonic welding of band 7 of pre-welding material is connected on bus-bar electrode 5, and band 7 (extraction wire) is welded on bus-bar electrode 5.
Also, also in advance pre-welding material, and ultrasonic bonding band 7 thereon can be carried out as shown in Fig. 2 (b).
Fig. 3 represents the explanatory diagram of the present invention.Fig. 3 represents solder material etc..Fig. 3 is represented the sun electricity described in Fig. 1, Fig. 2
1 of the materials of solder 6 for being welded such as material, the band 7 of the bus-bar electrode 5 in pond itself etc..
As described above, in the present invention due to bus-bar electrode 5 by NTA glass cream (NTA cream) it is fired formed, with
Toward solder in the case of and cannot or extremely be difficult to welding, however, with the present invention ultrasonic bonding, preparation heating
Welded using solder 6 under state, whereby with ultrasonic bonding pole well on bus-bar electrode 5 weld plated solder and
Band 7 (extraction wire), already experiment is confirmed.
Then, according to Fig. 4 and Fig. 5 flow chart order, according to the composition of Fig. 1 to Fig. 3, explain solar cell
Electrode portion (such as bus-bar electrode 5) ultrasonic bonding the step of.
Fig. 4 represents the action specification flow chart of the present invention.
In the diagram, S1 is to form NTA bus-bar electrodes.This is the bus-bar electrode 5 of Fig. 1 to Fig. 3, by NTA glass
The NTA cream of 100wt% (to 50wt%) carries out screen painting and sintering, forms the bus-bar electrode 5 being made up of NTA.And,
Bus-bar electrode 5 is as described in right side.
1. to make cream in not residual organic solvent in the way of processed (solvent is vaporized).
2. it is sintered with making NTA glass electrodes surface become smooth mode.
Also, so-called 1. to make cream in not residual organic solvent in the way of processed (solvent is vaporized), refer in order that
Not residual organic solvent in NTA cream, and process or heat drying process are dried, the solvent in cream is fully evaporated
(being vaporized) eliminates.During residual solvent, it may occur that the phenomenon that ultrasonic bonding cannot be smoothed out.
So-called its 2. is sintered with making NTA glass electrodes become smooth mode, refer to it is noted that to become Fig. 1,
The part screen painting NTA cream of the bus-bar electrode 5 of Fig. 2 and sinter when, half tone is carried out in the mode for as becoming smooth as possible
Printing, and be sintered with becoming smooth mode as far as possible when firing and after sintering.On the contrary, it should be noted that avoid shape
Into tiny concavo-convex, sintered in the mode for as becoming smooth as possible.If when unsmooth, it may occur that ultrasonic bonding cannot be smooth
The phenomenon for carrying out.
S2 is the temperature being heated up to below the temperature that solder can melt when ultrasound wave is supplied by substrate-placing on warm table
Degree.This preparation heating-up temperature, when ultrasound wave solder tip part 24 is connected to solder 6 and supplies ultrasound wave and heats simultaneously,
Because temperature of the solder 6 when slightly below ultrasound wave is not supplied will be melted, therefore the temperature of solder tip part 24 is set
(adjustment) is to temperature (referred to as the second assigned temperature) lower temperature (first that can be melted when ultrasound wave is supplied compared with the solder 6
Assigned temperature (being more than room temperature, when supplying ultrasound wave below the melt temperature of solder)).Additionally, the second assigned temperature is located at side
Within the temperature range of solder 6 can be melted when supply ultrasound wave side adds hot solder 6, the solder 6 of the situation of ultrasound wave is not supplied
The low temperature of melt temperature, the temperature in the range of generally low 10 to 40 DEG C (is passed through experiment and is asked due to the species depending on solder
).
S3 is that, by solder tip part 24, temperature improves the scope of the temperature that can be melted when ultrasound wave is supplied to solder
It is interior.
S4 is that ultrasound wave 20 is supplied to solder tip part 24 to 150KHz.These S3, S4 are to solder tip part
While 24 supply ultrasound wave 20 are to 150KHz, its temperature is improved, set temperature (the second finger that (adjustment) can be melted to solder 6
Constant temperature degree).
By above-mentioned S1 to S4, complete sintered in NTA cream and carry out ultrasonic bonding on the bus-bar electrode 5 of formation
Preparation, i.e. complete solder tip part 24 to be connected to into solder 6 and is melted solder 6 and is carried out supersonic welding in bus-bar 5
The preparation for connecing.
In Figure 5, Fig. 5 continues S4, solder (plated solder) above bus-bar electrode.This is will to pass through S1 extremely
S4 completes the solder tip part 24 of ultrasonic bonding preparation, shown in Fig. 2 (b) described above, with bus-bar electrode 5 above
While supply solder 6, the solder tip part 24 is abutted, solder 6 is melted and supersonic welding is carried out on bus-bar electrode 5
Connect.By this ultrasonic bonding, shown in such as Fig. 7 (b) and Fig. 8 (b), solder 6 is set to be welded on bus-bar electrode 5.
By above-mentioned, can be above bus-bar electrode 5 by the ultrasonic bonding of solder 6 (plated solder).
S6 is carried out in the same manner as S3 and S4 in the way of additional bands 1.This is equally carried out with the S3 and S4 of Fig. 4, in order to
The band 7 of Jing pre-welding materials 72 is ultrasonically welded at into bus-bar electrode 5, solder tip part 24 is set into (adjustment) and is referred to as second
Constant temperature degree and supply ultrasound wave, be formed as can ultrasonic bonding band 7 state.If the solder of melting is to converge with plated solder
It is identical solder during stream row's electrode 5, then the second assigned temperature and ultrasound wave are identical with when S3, S4, if difference person then supplies
(applying) is adapted to (striked via experiment according to the species of solder 6, pre-welding material 72 etc.) in its second assigned temperature and ultrasound
Ripple.
S7 is in the way of additional bands 2, ultrasound wave solder tip part to be connected to band and welded.This be by
Ultrasound wave solder tip part 24 is connected to band 7, makes in the solder of the band 7 or to be plated solder in remittance by pre-welding material 72
Flow the solder for arranging electrode 5 or the melt solder being externally supplied and be ultrasonically welded at bus-bar electrode 5.
S8 is to complete.The ultrasonic bonding of the band 7 for meaning to complete the copper on bus-bar electrode 5.
By above-mentioned, the NTA cream of solar cell can constituted Jing screen painting and on bus-bar electrode 5 after firing, it is sharp
Plated solder is carried out with ultrasonic bonding, and further welds band 7.
Fig. 6 represents the characteristic example of the ultrasonic brazing unit of the present invention.This expression is studying experiment described in Fig. 1 to Fig. 5
Used in 1 of characteristic of ultrasonic brazing unit.
In figure 6, it is following persons of the accompanying drawing used in experiment is studied as the characteristic of ultrasonic brazing unit.In amount
Due to production is contemplated during product, as long as so can be described in described Fig. 1 to Fig. 5 fired by NTA cream and be made
Carry out ultrasonic bonding above the grade of bus-bar electrode 5 well, then can adopt any characteristic person.
Additionally, the temperature of solder tip part 24 is measured by the thermometer of non-accompanying drawing (such as thermocouple embedment is ironed
Ferrum tip portion 24 is surveyed.And, the second assigned temperature is automatically adjusted to according to this measured value).
Fig. 7 represents the ultrasonic bonding example (NTA100%) of the present invention.The photo of accompanying drawing represents relevant in Fig. 4 and Fig. 5 institutes
NTA cream (NTA100%) the Jing screen paintings of explanation and the bus-bar electrode 5 (NTA100%) for sintering and being formed, in supersonic welding
Connect photo before and after.
Fig. 7 (a) represents the photo example of (NTA100%) before ultrasonic bonding.On the photo of Fig. 7 (a), horizontal is bar-shaped
Person is finger electrode 4 (Ag100%, with reference to Fig. 1, Fig. 2), the longitudinal banding person being such as coated in finger electrode 4 be Jing this
The NTA cream (100%) for studying experiment it is fired and formed bus-bar electrode (NTA100%) 5.For this bus-bar electrode
(NTA100%) 5 part, abuts solder tip part 24 and is welded in the present invention, or additional bands, is studied
Experiment.
Fig. 7 (b) represent on the bus-bar electrode (NTA100%) 5 of Fig. 7 (a), according to the step of described Fig. 4, Fig. 5 only
The photo example of ultrasonic bonding solder 6.In fact, the band 7 used as the extraction wire for making electric charge be taken out to outside is given
With ultrasonic bonding, but due to being welded with during band 7 and the state that cannot see below it, therefore represent herein and experimentally only will
Solder 6 gives ultrasonic bonding the latter.As illustrated, the part of bus-bar electrode (NTA100%) 5, can clearly see shallow white
Solder be welded on appearance on bus-bar electrode (NTA100%) 5.
As described above, by bus-bar electrode (NTA100%) according to Fig. 4, Fig. 5 of the present invention the step of, carries out ultrasound wave
Welding, confirms the situation for being capable of solder 6 on the bus-bar electrode 5 of the NTA100% that cannot be welded in the past
(the present inventors has found that this is true).
Then, in the same manner as the NTA100% of Fig. 7, represent in Fig. 8 with regard to the photo example of the bus-bar electrode 5 of NTA50%.
Fig. 8 represents the ultrasonic bonding example (NTA50%) of the present invention.The photo of accompanying drawing represents relevant described in Fig. 4 and Fig. 5
Bright NTA cream (NTA50%) Jing screen paintings and the bus-bar electrode (NTA50%) 5 for sintering and being formed, before ultrasonic bonding
And after photo.
Fig. 8 (a) represents the photo example of (NTA50%) before ultrasonic bonding.In the lateral sticks of Fig. 8 (a) photos upper part
Shape person is finger electrode 4 (Ag100%, with reference to Fig. 1, Fig. 2), the longitudinal banding person being such as coated in finger electrode 4 be Jing this
The NTA cream (50%) for studying experiment it is fired and formed bus-bar electrode (NTA50%) 5.For this bus-bar electrode
(NTA50%) 5 part, abuts solder tip part 24 and is welded in the present invention, or additional bands, carries out studying reality
Test.
Fig. 8 (b) represent on the bus-bar electrode (NTA50%) 5 of Fig. 8 (a), according to the step of already described Fig. 4, Fig. 5 only
The photo example of ultrasonic bonding solder 6.In fact, the band 7 used as the extraction wire for making electric charge be taken out to outside is entered
Row ultrasonic bonding, due to being welded with during band 7 and the state that cannot see below it, therefore represent herein experimentally only will weldering
Expect 6 ultrasonic bonding persons.As illustrated, the part of bus-bar electrode (NTA50%) 5, can clearly see albescent solder quilt
The appearance being welded on bus-bar electrode (NTA50%) 5.
As described above, carrying out ultrasound wave the step of by bus-bar electrode (NTA50%) according to Fig. 4, Fig. 5 of the present invention
Welding, confirms on the bus-bar electrode 5 of the NTA50% that cannot or extremely be difficult to weld or be easily peeled off in the past
It is capable of the situation (being found by the present inventors) of solder 6.
Following, when above-mentioned bus-bar electrode 5 of solar cell of ultrasonic bonding of the Jing present invention etc. is made realities
Apply example (experimental example) and be described in detail (below example and No. 2015-180720 (applying date of Japanese Patent Application：Heisei
On September 14th, 27) inventor, apply for the embodiment of artificial identical application case).
Fig. 9 represents that (step completes figure for one embodiment of the invention structural map:Profile).
In Fig. 9, silicon substrate 11 is known silicon semiconductor substrate.
High electron concentration region (diffusing, doping layer) 12 is equal on silicon substrate 11 by diffusing, doping and is formed with desired p
The known region (layer) of type/n-layer, in the direction incidence sunlight in figure, can produce electronics and (send out in silicon substrate 11
Electricity) and put aside the region of the electronics.Here, the electronics put aside passes through electronics conveying end (finger electrode (silver)) 14 upwardly-directed
It is removed (with reference to The effect of invention).
Dielectric film (silicon nitride film) 13 is sunlight is passed through (penetrating) and is made bus-bar electrode 15 with high electron concentration area
The known film that domain 14 is electrically insulated.
Electronics conveying end (finger electrode (silver)) 14 will be put aside in high electronics via the hole for being formed in dielectric film 13
The mouth (finger electrode) that electronics in concentration range 12 takes out.Finger electrode 14 is in the present invention as illustrated, when with NTA glass
When 100% (to 71% or so) fires bus-bar electrode 15, finger electrode 14 is that to form (firing) upper with bus-bar electrode 15
Face is mutually level part or passes and in the part for projecting above, and can make high electron concentration via the finger electrode 14
Electronics in region 12 is flowed directly into wire 17 (directly taking out electronics).That is, can be with high electron concentration region 12, finger electrode
14th, the path 1 (traditional path 1) of bus-bar electrode 15, wire 17, with high electron concentration region 12, finger electrode 14, wire
17 path 2 (present invention add path 2) this 2 paths are by the electronics (electric current) in high electron concentration region 12 via leading
Line 17 is taken out to outside, for result, the resistance value between high electron concentration region 12 and wire 17 can be made to be very little, subtracts
Low loss, can lift the efficiency of solar cell for result.
Bus-bar electrode (electrode 1 (NTA glass 100%)) 15 is to be electrically connected with multiple electronics conveying ends (finger electrode) 14
Electrode, be the electrode (with reference to The effect of invention) of the object of the usage amount for not using Ag or cutting down Ag.
Backplate (electrode 2 (aluminum)) 16 is formed in the known electrode below silicon substrate 11.
Wire (welding formed) 17, be electrically connected with multiple bus-bar electrodes 15 electronics (electric current I) is taken out to into outside
Wire；Or further by the wire ultrasonic bonding engagement finger electrode 14 in the present invention and bus-bar electrode 15
For mutually level part or part above bus-bar electrode 15 is passed above, and electronics (electric current) is taken out to outside
Wire.
Based on the construction of figure 1 above, from top to bottom during direction irradiation sunlight, sunlight is by without wire 17 and without electronics
The part of conveying end 14 and dielectric film 13, are incident to silicon substrate 11 and produce electronics.Then, put aside in high electron concentration region 12
Electronics, via electronics conveying end (finger electrode) 14, bus-bar electrode 15, the path 1 of wire 17, and electronics conveying end
(finger electrode) 14, the two paths of the path 2 of wire 17 are taken out to outside.Now, Figure 13 to Figure 17 as be described hereinafter, in weldering
Be mixed into 100% to 71% in cream (also can be less, with reference to Figure 17) NTA glass (conductive glass) as frit (frit) and
It is fired and forms bus-bar electrode 15, Ag can not be used or lower the usage amount of Ag.Hereinafter will sequentially explain.
Figure 10 represents the action specification flow chart of the present invention, and Figure 11 and Figure 12 represents the detailed configuration of each step.
In Fig. 10, S1 is to prepare silicon substrate.
S2 is to be cleaned.Shown in these S1, S2 such as Figure 11 (a), the face of the silicon substrate 11 prepared in S1 (is formed into high
The face in electron concentration region 12) clean well.
S3 is to be diffused doping.As shown in Figure 11 (b), carry out on the silicon substrate 11 that Figure 11 (a) was cleaned known
Diffusing, doping, form high electron concentration region 12.
S4 is to form anti-reflective film (silicon nitride film).As shown in Figure 11 (c), in the high electron concentration area for forming Figure 11 (b)
Behind domain 12, being used as anti-reflective film by known maneuver formation such as silicon nitride film (passes through sunlight, and reduces as far as possible
The film of surface reflection).
S5 is screen painting finger electrode.As shown in Figure 11 (d), after the silicon nitride film 13 for forming Figure 11 (c), half tone print
Scopiform into finger electrode 14 pattern.Printing material is that example is mixed into lead glass as frit person as used in silver.
S6 is that finger electrode is fired and it is burnt.The finger electrode carried out after screen painting to Figure 11 (d)
14 pattern (be mixed into silver and the frit of lead glass and winner) is fired, and such as Figure 11 (e) is shown, burns silicon nitride film 13
And it is formed at the finger electrode 14 for being formed with silver-colored (electric conductivity).
S7 is screen painting bus-bar electrode (electrode 1).As shown in Figure 12 (f), in the finger electrode 14 for forming Figure 11 (e)
Afterwards, screen painting forms the pattern of bus-bar electrode 15.Printing material for example uses NTA gases (100%) person as frit.
S8 is to fire bus-bar electrode.To Figure 12 (f) carry out screen painting after bus-bar electrode 15 pattern
(frit of NTA glass (100%)) be fired (even if the firing time it is longer also within 1 minute, fire 1 to 3 second with
On), shown in such as Figure 12 (g), bus-bar electrode 15 is formed at the superiors, and for the feature of the present invention, finger electrode 14 is to be formed
Be formed above the bus-bar electrode 15 of its superiors mutually level part or to pass above bus-bar electrode 15
Part.
Additionally, carrying out the printing of S5 and S7, also both can simultaneously be fired.
S9 is to form backplate (electrode 2).As shown in Figure 12 (h), formed for example in the downside (back side) of silicon substrate 11
Aluminium electrode.
S10 is that solder forms wire.As shown in Figure 12 (i), to weld the bus-bar electrode for being electrically connected Figure 12 (g)
Wire, for example formed with ultrasonic bonding and be electrically connected with, then can with high electron concentration region 12, finger electrode 14, converge
Stream row's electrode 16, the path 1 (traditional path 1) of wire 17, with high electron concentration region 12, finger electrode 14, wire 17
Path 2 (path 2 that the present invention is added) both paths, by the electronics (electric current) in high electron concentration field 12 via wire
17 are taken out to outside, can make resistance value between high electron concentration region 12 and wire 17 for very little and reduce loss, enter
And lift the efficiency of solar cell.That is, the path 2 that the present invention is added is that one end of finger electrode 14 is located at high electron concentration area
Among domain 12, and with above bus-bar electrode 15 of the other end with NTA glass 100% mutually level part or to pass
Part above bus-bar electrode 15, and directly engage (directly engage with ultrasonic bonding) wire, therefore shape in the part
Into high electron concentration region 12, finger electrode 14, wire 17 path 2.Also, path 1 is traditional path.
The step of by the above, solar cell can be made in silicon substrate.
Figure 13 represents detailed description of the invention figure (firing of bus-bar electrode).
Figure 13 (a) schematically shows the example for firing bus-bar electrode with silver 100%, NTA0% (weight ratio), and Figure 13 (b) shows
Meaning property represent with silver 50%, NTA50% (weight ratio) fire bus-bar electrode example, Figure 13 (c) schematically show with
NTA100% (weight ratio) fires the example of bus-bar electrode.Even if the firing time is longer also within 1 minute, and is set to 1 to 3 second
More than.
Such as the accompanying drawing of Figure 13 (a), Figure 13 (b) and Figure 13 (c), to become roughly the same construction in the way of the sun that formed
Battery studies experiment, is obtained experimental result described as follows.
The conversion efficiency of solar cell
Ag 100%, the NTA 0% of Figure 13 (a) average about 17.0%
Ag 50%, the NTA 50% of Figure 13 (b) average about 17.0%
Ag 0%, the NTA 100% of Figure 13 (c) average about 17.2%
Experimental result is studied, for the material of the pattern of printing bus-bar electrode, is made in Figure 13 (a) and Figure 13 (b)
Conversion efficiency during solar cell is average about 17.0%, obtains roughly the same result, furthermore, changed in Figure 13 (c)
Efficiency is average about 17.2%.Learnt by Initial Experimental Stage result, Figure 13 (a) to (c) is in the model of roughly the same conversion efficiency
In enclosing, or the NTA 100% of Figure 13 (c) is slightly higher conversion efficiency.Additionally, NTA glass is made up of vanadium, barium, ferrum, especially
It is that ferrum is internally strongly bonded and residues in inside this, even if the property also minimum with its associativity is mixed with other materials
(with reference to Japanese Patent No. 5333976 etc.), more and speculate be by described high electron concentration region of the invention and wire it
Between path (path 1 with path 2 arranged side by side) improvement caused by.
Figure 14 and Figure 15 represent the explanatory diagram (bus-bar electrode) of the present invention.
Figure 14 (a) and Figure 14 (b) is NTA 50%, Ag50% person, wherein, Figure 14 (a) represents all plane graphs, Figure 14
B () represents enlarged drawing.Figure 15 (c) is NTA 100%, Ag, and Figure 15 (c) represents enlarged drawing.
In Figure 14 (a) and Figure 14 (b), bus-bar electrode 15 is strip as shown in all plane graphs of Figure 14 (a)
Electrode, when this is amplified with optical microscope, can be observed the construction as shown in Figure 14 (b).
In Figure 14 (b), bus-bar electrode 15 using the frit of traditional Ag and lead glass when being fired, and Ag is equal
Disperse evenly, but Ag the and NTA glass using the present invention frit be fired (even if it is longer also within 1 minute, 1
Firing to more than 3 seconds) when, such as shown in the Figure 14 (b), clear Ag aggregations are formed in the central part of bus-bar electrode 15
Point.Therefore, as illustrated by one section of The effect of invention, it is mixed into NTA glass in Ag and carries out short time firing (even if longer be also
1 minute, the firing of more than 1 to 3 second) when, Ag can be gathered in middle body and electric conductivity is lifted (compared to traditional Ag equably
Scattered situation, electric conductivity can be lifted), and because NTA glass itself also has the property effect of the sum total such as electric conductivity, even if reducing Ag's
Ratio and increase NTA glass, manufacture as conversion efficiency during solar cell it has been observed that for about 16.9%, can obtain in an experiment
To roughly the same result.
And, firing temperature is 500 DEG C to 900 DEG C, but need to be determined depending on experiment most suitable when solar cell is made as
Temperature.The too low or too high construction that cannot be obtained such as Figure 14 (b), need to determine according to experiment.
In Figure 15 (c), bus-bar electrode 15 is the electrode of the wider strip of transverse width of the middle body of accompanying drawing, table
Show the present invention 1 of enlarged photograph of NTA 100%.
Can be clear, the bus-bar electrode 15 of this Figure 15 (c) is the finger electrode 14 with the narrower width in longitudinal direction
Pass the bus-bar electrode 15 and in the somewhat prominent part in upside, and around the part of the protrusion relatively script finger electrode
14 width is thicker.Then, on the bus-bar electrode 15 of diagram, with, width identical with the width of the bus-bar electrode 15 slightly
Little or slightly larger width, in the way of Figure 16 as be described hereinafter is explained in detail ultrasonic bonding is carried out, whereby can be with aforesaid path
1 (photoelectron concentration range 12, finger electrode 14, bus-bar electrode 15, the path 1 of wire 17) and (the photoelectron concentration area of path 2
Domain 12, finger electrode 14, the path 2 of wire 17) two kinds of pathway conductives connection high concentration electric subregion and the wire, reduce electric
The loss of sub (electric current) and be efficiently taken out to outside, obtain the conversion efficiency roughly the same with Figure 14 (a), (b), or slightly higher
Conversion efficiency (about 17.2%).
And, firing temperature be 500 roughly the same with Figure 14 (a), (b) DEG C to 900 DEG C, but need to determine according to experiment system
Into as temperature most suitable during solar cell.The too low or too high construction that cannot be obtained such as Figure 15 (c), need to determine according to experiment
It is fixed.
Figure 16 represents the explanatory diagram (ultrasonic bonding) of the present invention.This is the situation person of the NTA 100% of aforementioned Figure 15 (c)
(and, may be equally applied to Figure 14 (a), (b)).
State after Figure 16 (a) expressions finger electrode 14 is fired.
Figure 16 (b) represents conventional case, is on the bus-bar electrode 15 of Figure 16 (a), to weld the here figure being represented by dotted lines
For the wire 17 of slightly larger (alternatively identical or less).It is to carry out general welding in this conventional case, therefore the institute of finger electrode 14
Prominent part (Ag) and the solder joints of wire 17, but the not prominent part (part of NTA100%) of finger electrode 14 with lead
The not fully solder joints of line 17, mechanical strength is simultaneously insufficient.On the other hand, in the ultrasonic bonding of Figure 16 (c) described later
When solder joints, mechanical strength can be substantially improved.
Figure 16 (c) represents the example of the present invention, is (the bus-bar electrode of Figure 15 (c) of bus-bar electrode 15 in Figure 16 (a)
15) the slightly larger wire 17 that ultrasonic bonding is represented by dotted lines on.In the example of this present invention, ultrasonic bonding is carried out, therefore finger-like
The part (Ag) that electrode 14 is projected and the solder joints of wire 17, and, the part (part of NTA100%) without finger electrode 14
With the also solder joints of wire 17, therefore mechanical strength is substantially improved, at the same improve aforesaid path 2 (high electron concentration region 12,
Finger electrode 14, bus-bar electrode 15, the path 2 of wire 17) electric conductivity.
Figure 17 represents the measure example (efficiency) of the present invention.This Figure 17 makes NTA by 100% for aforesaid bus-bar electrode 15
Good measure example when being changed to 70%, the transverse axis of Figure 17 represents the numbering of sample, and the longitudinal axis represents efficiency (%).Sample sets
For：
Solar cell is made with these, each measurement result (efficiency) is as shown in drawings.Further, since be Initial Experimental Stage, therefore
As illustrated, being presented suitable discrete in measurement result, but all fall within the range of 16.9 to 17.5, even and if with NTA
100% makes bus-bar electrode 15 (that is, making without Ag) to manufacture during solar cell, still be obtained with NTA 70% (or
Further be in a ratio of same degree or slightly higher efficiency for 80%, 90%), and can it is clear also can using NTA 100% (
It is bright it is found that this is true).
Claims (10)
1. a kind of ultrasonic welding method, be to the arbitrary portion coating cream on the substrate and it is sintered after part welded
Welding method, and have steps of：
Preparation heating stepses, be by arbitrary portion be coated with do not contain the cream of Ag, Cu, Pb and it is sintered after substrate or the base
Cream part on plate, preparation is heated to the first assigned temperature of the melt temperature less than solder；And
Ultrasonic welding step, is that preparation is heated to the substrate of the first assigned temperature in the prepared heating stepses
Cream part, by being the state of the second assigned temperature by the solder tip partial adjustment of abutting, and makes the solder tip part
It is connected to the cream part or abuts while moving, and be welded in the cream part；Second assigned temperature is to apply super
The solder supplied in the state of sound wave produces melting, and the temperature that can be melted less than solder when not applying ultrasound wave.
2. ultrasonic welding method as claimed in claim 1, wherein, first assigned temperature is set to room temperature with up to described
Temperature in the range of second assigned temperature.
3. ultrasonic welding method as claimed in claim 1 or 2, wherein, second assigned temperature is set to not apply to surpass
Temperature in the range of solder can be melted during sound wave temperature is low 10 to 40 DEG C.
4. ultrasonic welding method as claimed any one in claims 1 to 3, wherein, the cream for not containing Ag, Cu, Pb
It is set to not contain Ag, Cu, Pb and vanadate glass is the NTA cream of 100wt%, or does not contain Cu, Pb and be more than 0 containing Ag
To 50wt% remaining as the NTA cream of vanadate glass.
5. the ultrasonic welding method as any one of Claims 1-4, wherein, the solder at least containing Sn, Zn,
Cl。
6. the ultrasonic welding method as any one of claim 1 to 5, wherein, in the ultrasonic welding step
When being welded, in order that the organic solvent in cream is not remained, and the cream part is dried in advance or heat drying.
7. the ultrasonic welding method as any one of claim 1 to 6, wherein, to coat the cream portion of the substrate
Point becoming smooth mode as much as possible is sintered.
8. the ultrasonic welding method as any one of claim 1 to 7, wherein, the ultrasound wave is set to 20KHz extremely
The frequency of 150KHz.
9. the ultrasonic welding method as any one of claim 1 to 8, wherein, the portion of the coating cream on the substrate
It is allocated as the electrode part for solar cell.
10. a kind of ultrasonic brazing unit, be to the arbitrary portion coating cream on the substrate and it is sintered after part weld
Welder, and with following means：
Preparation heater meanses, be by arbitrary portion be coated with do not contain the cream of Ag, Cu, Pb and it is sintered after substrate or the base
Cream part on plate, preparation is heated to first assigned temperature low less than the melt temperature of solder；And
Ultrasonic bonding means, are Jing preparations are heated to be the first assigned temperature in the prepared heating stepses the substrates
Cream part, by the solder tip part that will be abutted, is adjusting the state to the second assigned temperature, makes the solder tip part
The cream part is connected to, or is moved while abutting, and the cream part is welded；Second assigned temperature
It is that the solder supplied in the state of ultrasound wave is applied produces melting, and can melts less than solder when not applying ultrasound wave
Temperature.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015209440A JP6696665B2 (en) | 2015-10-25 | 2015-10-25 | Ultrasonic soldering method and ultrasonic soldering apparatus |
| JP2015-209440 | 2015-10-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106607644A true CN106607644A (en) | 2017-05-03 |
| CN106607644B CN106607644B (en) | 2020-02-14 |
Family
ID=58614773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610537479.1A Active CN106607644B (en) | 2015-10-25 | 2016-07-08 | Ultrasonic welding method and ultrasonic welding device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6696665B2 (en) |
| KR (2) | KR20170048135A (en) |
| CN (1) | CN106607644B (en) |
| TW (1) | TWI630049B (en) |
| WO (1) | WO2017073299A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108672867A (en) * | 2018-05-28 | 2018-10-19 | 东莞市新玛博创超声波科技有限公司 | The flux-free impulse ultrasound low temperature brazing method of copper-based material |
| CN108838507A (en) * | 2018-06-28 | 2018-11-20 | 北京铂阳顶荣光伏科技有限公司 | A kind of welding method of busbar |
| CN113226613A (en) * | 2018-12-18 | 2021-08-06 | 亚特比目有限会社 | Ultrasonic welding device and ultrasonic welding method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI699899B (en) * | 2018-06-26 | 2020-07-21 | 日商亞特比目有限公司 | Solar cell and method for manufacturing solar cell |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2017080753A (en) | 2017-05-18 |
| TWI630049B (en) | 2018-07-21 |
| JP6696665B2 (en) | 2020-05-20 |
| TW201714691A (en) | 2017-05-01 |
| CN106607644B (en) | 2020-02-14 |
| KR20190000346A (en) | 2019-01-02 |
| WO2017073299A1 (en) | 2017-05-04 |
| KR20170048135A (en) | 2017-05-08 |
| KR102002796B1 (en) | 2019-07-23 |
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