CN104752554B - A kind of preparation method of back electrode of solar cell - Google Patents
A kind of preparation method of back electrode of solar cell Download PDFInfo
- Publication number
- CN104752554B CN104752554B CN201310749971.1A CN201310749971A CN104752554B CN 104752554 B CN104752554 B CN 104752554B CN 201310749971 A CN201310749971 A CN 201310749971A CN 104752554 B CN104752554 B CN 104752554B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- back electrode
- preparation
- bsf
- soldering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 88
- 238000005476 soldering Methods 0.000 claims abstract description 191
- 230000004907 flux Effects 0.000 claims abstract description 106
- 229910000679 solder Inorganic materials 0.000 claims abstract description 80
- 238000003466 welding Methods 0.000 claims abstract description 75
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000000853 adhesive Substances 0.000 claims abstract description 17
- 230000001070 adhesive effect Effects 0.000 claims abstract description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 82
- 229910052742 iron Inorganic materials 0.000 claims description 41
- 238000005507 spraying Methods 0.000 claims description 31
- -1 ammonium fluoroborate Chemical compound 0.000 claims description 27
- 239000007921 spray Substances 0.000 claims description 26
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 238000004021 metal welding Methods 0.000 claims description 11
- 239000011701 zinc Substances 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 239000001856 Ethyl cellulose Substances 0.000 claims description 8
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical group CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 8
- 229920001249 ethyl cellulose Polymers 0.000 claims description 8
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 8
- 229920000180 alkyd Polymers 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 239000005011 phenolic resin Substances 0.000 claims description 5
- 229920001568 phenolic resin Polymers 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 229920001470 polyketone Polymers 0.000 claims description 5
- 150000003839 salts Chemical group 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- JVCDUTIVKYCTFB-UHFFFAOYSA-N [Bi].[Zn].[Sn] Chemical compound [Bi].[Zn].[Sn] JVCDUTIVKYCTFB-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 3
- 229910001369 Brass Inorganic materials 0.000 claims description 3
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 3
- AYAVGFXUFNOHLN-UHFFFAOYSA-N [Sb].[Sn].[Bi].[Zn] Chemical compound [Sb].[Sn].[Bi].[Zn] AYAVGFXUFNOHLN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002140 antimony alloy Substances 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- 239000010951 brass Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- LIQLLTGUOSHGKY-UHFFFAOYSA-N [B].[F] Chemical group [B].[F] LIQLLTGUOSHGKY-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 abstract description 36
- 239000004332 silver Substances 0.000 abstract description 36
- 229910052782 aluminium Inorganic materials 0.000 abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 29
- 238000004519 manufacturing process Methods 0.000 abstract description 29
- 239000004411 aluminium Substances 0.000 abstract description 18
- 238000013467 fragmentation Methods 0.000 abstract description 7
- 238000006062 fragmentation reaction Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 208000037656 Respiratory Sounds Diseases 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 230000008569 process Effects 0.000 description 13
- 238000001035 drying Methods 0.000 description 11
- 238000007650 screen-printing Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 239000012776 electronic material Substances 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 8
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 241000167857 Bourreria Species 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- HTMVPCLORYBQKH-UHFFFAOYSA-N OB(O)O.N.N.N.[F] Chemical compound OB(O)O.N.N.N.[F] HTMVPCLORYBQKH-UHFFFAOYSA-N 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- FAWGZAFXDJGWBB-UHFFFAOYSA-N antimony(3+) Chemical compound [Sb+3] FAWGZAFXDJGWBB-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The preparation method of back electrode of solar cell provided by the invention, soldering flux band is formed on the surface of Al-BSF using soldering flux first, then the solder band of non-silver metal material is formed on the surface of soldering flux band, the pellumina on Al-BSF surface can be abolished by the setting of soldering flux band, Al-BSF surface is set to expose fresh metallic aluminium, the non-silver wire subsequently fed（Solder）Melted under the heat effect of soldering tip, fused solution merges with metallic aluminium, so that the solder of molten condition is adhered to the surface of the Al-BSF well, avoid the use of silver, reduce cost, avoid and use ultrasonic vibration apparatus, the intensity of finished product significantly improves, fragmentation and crackle substantially reduce, substantially increase the quality of back electrode of solar cell, the back electrode of solar cell prepared using the preparation method of the present invention, fragmentation and hidden to split rate low, back electrode and the adhesive force of Al-BSF are strong, with the good welding performance of photovoltaic welding belt, average photoelectric efficiency meets the requirements, low manufacture cost.
Description
Technical field
The present invention relates to a kind of preparation method of back electrode of solar cell, belong to area of solar cell.
Background technology
Crystal silicon solar energy battery occupies more than 80% share of photovoltaic cell dimensions of market, and is expected to turn into future
The mainstay of supply of electric power.
The method that tradition prepares crystalline silicon solar battery electrode is metallization process, is specially：By polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, first using silk-screen printing back side silver paste, then dry, overleaf silver paste remainder shady face part,
Back field aluminum paste is printed, after drying, then after phototropic face printing front side silver paste, process of passing through tunnel stove sintering, obtains possessing Al-BSF, silver
The solar battery sheet of back electrode line and front electrode line, the technique are simply ripe.But the program uses slurry to use
Containing conductive silver slurry, therefore, its material cost is of a relatively high.
In face of the as above defect of traditional handicraft, how using conductive electrode of the non-silver material as solar cell, and protect
The performances such as good conduction, adhesive force and welding are held, turn into the focus of current electrode of solar battery research.
Chinese patent literature CN102248243A and CN102969406A individually disclose a kind of side for solder-coated
Method and device, using non-silver wire as welding wire, when soldering tip heats, welding wire turns into the molten metal of molten condition, the melting
The molten metal of state is coated to solar cell Al-BSF surface under the ultrasonic vibration effect that ultrasonic wave is applied, by coated
Form the back electrode of solar cell.Practice have shown that the back electrode formed by the coated, should compared to traditional printing silver electrode
The adhesive strength of coated and Al-BSF is high, the good welding performance with photovoltaic welding belt.But this method needs the ultrasound specially designed
Wave device, equipment cost increase；Also, when being coated using the program, after wire melting, ultrasonic wave passes through molten
The molten metal of state is applied on silicon chip of solar cell, and ultrasonic vibration easily causes the broken or hidden of silicon chip and split.
The content of the invention
Therefore, the technical problem to be solved in the present invention is to overcome rear electrode for crystal silicon solar battery of the prior art
Preparation method cost is high and silicon chip is broken or it is hidden split the defects of rate is high, so as to provide, a kind of cost is low, silicon chip is broken and hidden
Split low rate and the preparation method of back electrode and the strong back electrode of solar cell of the adhesive force of Al-BSF.
Therefore, the present invention provides a kind of preparation method of back electrode of solar cell, comprise the following steps：
S10：Some soldering flux bands formed by soldering flux are formed on the Al-BSF surface of solar cell；S20：Pass through
Non-silver metal welding wire is adhered to and forms some solder bands by the Al-BSF surface of soldering flux band covering by the mode of soldering,
Back electrode is formed after the solder band cooling.
During soldering, there is gap between the soldering flux band and soldering tip, the non-silver metal welding wire is described in the gap
Soldering tip is heated to molten condition, the non-silver metal of molten condition under the drive of the soldering tip along the soldering flux Tape movement with
The solder band is formed on the Al-BSF surface.
The soldering flux is triethanolamine-fluoboric acid salt form soldering flux.
The triethanolamine-fluoboric acid salt form soldering flux includes the component of following mass parts：The mass of borofluoride 5.0 ~ 30
Part, the mass parts of organic adhesive 3.0 ~ 25, the mass parts of triethanolamine 60 ~ 95.
Borofluoride is one or more of mixtures in zinc fluoroborate, ammonium fluoroborate, fluoboric acid cadmium.
The organic adhesive is ethyl cellulose, NC Nitroncellulose, alkyd resin, phenolic resin, epoxy resin, phenolic ketone
One or more of mixtures in resin, novolac epoxy resin or polyketone resin.
The width of the soldering flux band is 5.0 ~ 20mm, and thickness is 2.0 ~ 40 μm.
The width of the soldering flux band is 8.0 ~ 12mm, and thickness is 5.0 ~ 20 μm.
The both ends of the length direction of the soldering flux band respectively with the Al-BSF edge shape near the end
D at interval, d are 5.0 ~ 20mm.
Some solder bands being parallel to each other are formed on the surface of the Al-BSF.
The width of the width of the solder band≤soldering flux band.
The width of the solder band is 2.0 ~ 10mm, and thickness is 0.2 ~ 20 μm.
The width of the solder band is 2.0 ~ 5.0mm, and thickness is 1.0 ~ 5.0 μm.
The non-silver metal welding wire is pure tin or tin alloy.
The tin alloy is one kind of red brass, tin zinc bismuth alloy or tin zinc bismuth antimony alloy.
A diameter of 0.2 ~ 2.0 mm of the non-silver metal welding wire.
A diameter of 0.8 ~ 1.0mm of the non-silver metal welding wire.
During charging, the non-silver metal welding wire is 30 ~ 60 ° with the angle γ that the Al-BSF surface is formed.
In the step S10, the soldering agent solution containing soldering flux is finely sprayed to by the way of spray gun spraying
The Al-BSF surface forms the soldering flux band.
The soldering agent solution by triethanolamine by being heated to 50 ~ 60 DEG C, then organic binder bond is added thereto, finally
Borofluoride is added, 0.5 ~ 2h is stirred, it is fully dissolved obtained.
The nozzle diameter of the spray gun be 5.0 ~ 50 μm, the front end of the nozzle it is vertical with the Al-BSF surface away from
From h1For 2.0 ~ 50mm, the axis of the nozzle is 60 ~ 90 ° with the angle α that the Al-BSF surface is formed.
The soldering tip is the soldering tip of electric iron, and the soldering tip of the electric iron has the inclined-plane towards the Al-BSF surface,
The vertical range h of the front end on the inclined-plane and the Al-BSF surface2For 0.1 ~ 2.0mm, the inclined-plane and the Al-BSF
The angle β that surface is formed is 5.0 ~ 30 °, and the soldering tip of the electric iron is being with the width w on the perpendicular direction of its direct of travel
3.0~10mm。
The vertical range h of the front end on the inclined-plane and the Al-BSF surface2For 0.2 ~ 1.0mm, the inclined-plane and aluminium
The angle β that back surface field surface is formed is 10 ~ 20 °.
The heating-up temperature of the soldering tip is 300 ~ 500 DEG C.
The preparation method of back electrode of solar cell provided by the invention has advantages below：
1. the preparation method of back electrode of solar cell provided by the invention, first using soldering flux on the surface of Al-BSF
Soldering flux band is formed, then the solder band of non-silver metal material is formed on the surface of soldering flux band in a manner of soldering, not only keeps away
The use of silver is exempted from, has reduced cost, it is thus also avoided that using ultrasonic vibration apparatus, reduced the broken or hidden of silicon chip and split.
2. the preparation method of back electrode of solar cell provided by the invention, Al-BSF surface is abolished by using soldering flux
Pellumina, Al-BSF surface is exposed fresh metallic aluminium, then by simple brazing mode, the non-silver that will subsequently feed
Wire（Solder）Melted under the heat effect of soldering tip, fused solution merges with metallic aluminium, is covered in above metallic aluminium
Soldering flux, which is now heated, all to volatilize so that the solder of molten condition is adhered to the surface of the Al-BSF well, not only keeps away
The use of silver is exempted from, has reduced cost, and avoided using ultrasonic vibration apparatus, prepared using the preparation method of the present invention
Back electrode and the adhesive strength of Al-BSF significantly improve, the fragmentation and crackle of finished product solar cell substantially reduce, and carry significantly
The high quality of solar cell, the solar cell containing the back electrode prepared using preparation method provided by the invention, is broken
Piece and it is hidden split that rate is low, the adhesive force of back electrode and Al-BSF is strong, with the welding performance of photovoltaic welding belt might as well, average photoelectric efficiency symbol
Close and require, the low manufacture cost of electrode.
3. the preparation method of back electrode of solar cell provided by the invention, the soldering flux is triethanolamine-fluoboric acid
Salt form soldering flux, the soldering flux include the component of following mass parts, and containing the mass parts of borofluoride 5.0 ~ 30, organic adhesive is
3.0 ~ 25 mass parts, the mass parts of triethanolamine 60 ~ 95.The borofluoride is in zinc fluoroborate, ammonium fluoroborate, fluoboric acid cadmium
One or more of mixtures；Organic adhesive is ethyl cellulose, NC Nitroncellulose, alkyd resin, phenolic resin, asphalt mixtures modified by epoxy resin
Fat, novolac epoxy resin, aldehyde ketone resin, one or more of mixtures of polyketone resin.The soldering flux of mentioned component can be more
The good pellumina for abolishing Al-BSF surface, and the quality on Al-BSF surface will not be damaged so that the solder band can
The surface of the Al-BSF is preferably adhered to, improves adhesion strength.
4. the preparation method of back electrode of solar cell provided by the invention, the soldering flux is prepared using following methods,
Triethanolamine is heated to 50 ~ 60 DEG C, adds organic binder bond, is eventually adding borofluoride, stirs 0.5 ~ 2h, fully dissolving
After obtain the soldering agent solution.The soldering agent solution formed, it is easy to by way of spraying even application to Al-BSF
Ad-hoc location, form quality some soldering flux bands evenly, improve whole rear electrode for crystal silicon solar battery
Quality；And above-mentioned soldering flux also allows for the volatilization during solder band is subsequently formed.
5. the preparation method of back electrode of solar cell provided by the invention, the width, thickness to soldering flux band are further
It is optimized, further raising has been carried out to the performance of solar cell, the too thick soldering flux that easily causes of soldering flux band is follow-up
Under heated condition, organic matter volatilization residual is excessive, and the contact resistance of the weld strength and battery of solder and Al-BSF can be caused
Adverse effect；It is too thin to be not enough to remove pellumina, the weld strength of solder and Al-BSF may be influenceed.It is of the invention preferred
The width of the soldering flux band of formation is 5.0 ~ 20mm, and further preferred width is 8.0 ~ 12mm, and preferred thickness is 2.0 ~ 40 μm, is entered
One step preferred thickness is 5.0 ~ 20 μm.
6. the preparation method of back electrode of solar cell provided by the invention, the both ends of the length direction of the solder band
5.0 ~ 20mm is generally with forming interval d, interval d near the Al-BSF edge of the end respectively, this kind design
It can further prevent from polluting cell piece edge when welding wire is heated and coated and form short circuit.
7. the preparation method of back electrode of solar cell provided by the invention, the welding wire used is non-silver wire, specifically
For pure tin or tin alloy, it is preferred to use in tin alloy, more specifically red brass, tin zinc bismuth alloy or tin zinc bismuth antimony alloy
It is a kind of.The being mutually dissolved property of zinc-aluminium is strong, adds zinc in the alloy, and melt solder liquid can be made to be spread into metallic aluminium rapidly, can be big
Width improves weld strength.Addition bismuth, antimony element conveniently adjust the fusing point of welding wire, adjust the melting time of welding wire, and then control weldering
The coating speed of material strip.
8. the preparation method of back electrode of solar cell provided by the invention, welding wire forms certain angle with Al-BSF surface
γ is spent, is typically chosen as 30 ~ 60 °.This kind sets the entrance and melting for facilitating welding wire.
9. the preparation method of back electrode of solar cell provided by the invention, further the diameter of welding wire is carried out excellent
Change, further optimized with the formation speed and performance of butt welding material strip, in order to ensure optimal effect, welding wire it is a diameter of
0.2 ~ 2.0 mm, preferably 0.8 ~ 1.0mm.
10. the preparation method of back electrode of solar cell provided by the invention, inclined-plane and the Al-BSF table of electric soldering iron tip
Face, form slanted angle β and certain clearance distance h2, angle and gap are two very crucial parameters, on the one hand they
Heating melting and charging rate of the welding wire under soldering tip are influenceed, on the other hand influences the capillary suction velocity of welding wire, and then is influenceed
The coating speed and performance of solder band.In order to ensure optimal effect, the least significant end on the inclined-plane and the Al-BSF surface
Vertical height h2For 0.1 ~ 2.0mm, the inclined-plane is 5.0 ~ 30 ° with the angle β that Al-BSF surface is formed.
11. the preparation method of back electrode of solar cell provided by the invention, the width w of soldering tip influences coated with solder band
Width, in order to ensure optimal process efficiency and be easy to form the solder band of required width, the width w of the electric soldering iron tip
For 3.0 ~ 10mm.
12. the nozzle diameter of the preparation method of back electrode of solar cell provided by the invention, preferably spray gun is 5.0 ~ 50 μ
M, nozzle and the vertical range h on Al-BSF surface1For 2.0 ~ 50mm, the Al-BSF surface institute of straight line and solar cell where nozzle
Into angle α be 60 ~ 90 °, consequently facilitating forming more excellent soldering flux band.
Brief description of the drawings
Fig. 1 is the schematic diagram using spray gun spraying soldering flux.
Fig. 2 is distribution schematic diagram of the soldering flux band on the Al-BSF surface of solar battery sheet.
The soldering tip of electric iron and the relative position schematic diagram of welding wire when Fig. 3 is coated with solder band.
Fig. 4 is distribution schematic diagram of the solder band on the aluminium back surface field surface of solar battery sheet.
Fig. 5 is the sectional view on the inclined-plane of the soldering tip of electric iron.
1- spray guns in figure；2- solar cell pieces（Al-BSF surface is upward）；3- soldering flux bands；4- electric iron；5- soldering tips；6-
Welding wire；7- solder bands（Back electrode band）.
In figure, h1For the vertical range of the front end and Al-BSF surface of nozzle；α is the axis of nozzle and the Al-BSF
The angle that surface is formed； h2For the least significant end and the vertical range on Al-BSF surface on inclined-plane；β is inclined-plane and Al-BSF surface shape
Into angle；γ is the angle that the welding wire is formed with Al-BSF surface；D is the both ends difference of the length direction of solder band
With near the interval at the Al-BSF edge of the end；W be soldering tip with the width on the perpendicular direction of its direct of travel
Degree.
Embodiment
In order that technical problem solved by the invention, technical scheme and beneficial effect are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only explaining
The present invention, it is not intended to limit the present invention.
Embodiment 1
The present embodiment provides a kind of preparation method of back electrode of solar cell, comprises the following steps：
Step 1：The preparation of silicon chip
Be 156 × 156mm from specification, thickness be 180 μm（Before corrosion）Polysilicon chip, by the polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, silk-screen printing back field aluminum paste is used in whole shady face（Shuo He electronic materials limited company
The 108C aluminium pastes of production）And after drying, republish front side silver paste（The 17F silver pastes of Dupont companies production）, process of passing through tunnel stove burning
After knot, possessed the silicon chip of Al-BSF and positive electricity polar curve；
Step 2：The preparation of soldering flux
The triethanolamine of 70 mass parts is heated to 55 DEG C, adds the ethyl cellulose of 10 mass parts（Viscosity specification is
20mPas, the production of LG-DOW company）, the zinc fluoroborate of 20 mass parts is then added, 1h is stirred, makes ethyl cellulose and fluorine
Firebrake ZB is completely dissolved, and obtains uniform soldering agent solution；
Step 3：The preparation of back electrode
First, the surface spraying liquid flux using automatic spraying machine to the Al-BSF of solar battery sheet 2, institute
Stating automatic spraying machine has spray gun 1, and the nozzle diameter of the spray gun 1 is 30 μm, the axis of the nozzle and the Al-BSF table
The angle α that face is formed is 60 °, the vertical range h of the front end of the nozzle and the Al-BSF surface1For 30mm, such as Fig. 1 institutes
Show, the mobile linear velocity of the cell piece is 120mm/s, obtains 3 soldering flux bands 3, as shown in Figure 2；Every soldering flux band
Width is 8.0mm, and thickness is 5.0 μm；
Then, as shown in figure 3, the soldering tip 5 for having bevelled electric iron 4 is moved to above the Al-BSF so that institute
The least significant end and solar cell piece Al-BSF surface formation height for stating inclined-plane are h2Gap, and cause the electric iron 4 weldering
First 5 inclined-plane and the Al-BSF surface of solar cell form angle β, wherein, h2For 0.5mm, β is 30 °, with direct of travel phase
Vertical direction, the width w of soldering tip is 6.0mm, as shown in Figure 5；
Then, the welding wire 6 that non-silver wire is formed is sent to the inclined-plane and the sun of the soldering tip 5 of the electric iron 4
In the gap that cell piece Al-BSF surface is formed, the welding wire forms angle γ with Al-BSF surface, and γ is 45 °, such as Fig. 3
Shown, in the gap, the welding wire 6 is heated to 500 DEG C by soldering tip 5, forms the molten metal of molten condition, the molten metal
Al-BSF surface described in drive lower edge in the soldering tip is advanced, and is adhered to Al-BSF surface and is formed solder band 7, every solder
It is 6.0mm with 7 width, thickness is 6.0 μm；The both ends of the length direction of soldering flux band respectively near the end
The Al-BSF edge forms interval d, d 15mm, and the width of the solder band 7 is less than the width of the soldering flux band 3, cooling
The solder band 7 afterwards forms the backplate of battery, as shown in Figure 4.
In the present embodiment, the welding wire 6 used is non-silver wire, specially tin zinc（Sn95Zn5.0）Alloy, welding wire it is straight
Elect 0.8mm as in footpath.
Embodiment 2
The present embodiment provides a kind of preparation method of back electrode of solar cell, comprises the following steps：
Step 1：The preparation of silicon chip
Be 156 × 156mm from specification, thickness be 180 μm（Before corrosion）Polysilicon chip, by the polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, silk-screen printing back field aluminum paste is used in whole shady face（Shuo He electronic materials limited company
The 108C aluminium pastes of production）And after drying, republish front side silver paste（The 17F silver pastes of Dupont companies production）, process of passing through tunnel stove burning
After knot, possessed the silicon chip of Al-BSF and positive electricity polar curve;
Step 2：The preparation of soldering flux
The triethanolamine of 95 mass parts is heated to 60 DEG C, adds the NC Nitroncellulose of 15 mass parts（The trade mark is L-type,
Luzhou north chemical industrial company produces）, the ammonium fluoroborate of 30 mass parts is then added, 2h is stirred, makes NC Nitroncellulose and fluorine
Ammonium borate is completely dissolved, and obtains uniform soldering agent solution；
Step 3：The preparation of back electrode
First, the surface spraying liquid flux using automatic spraying machine to the Al-BSF, the automatic spraying attachment
There is spray gun 1, the nozzle diameter of the spray gun 1 is 25 μm, and the angle α that the axis of the nozzle is formed with the Al-BSF surface is
90 °, the distance h of the front end of the nozzle and the Al-BSF surface1For 50mm, the mobile linear velocity of the cell piece is
100mm/s, 3 soldering flux bands 3 are obtained, the width of every soldering flux band 3 is 10mm, and thickness is 10 μm；
Then, the soldering tip 5 for having bevelled electric iron 4 is moved to above the Al-BSF so that the inclined-plane is most
It is h that end forms height with solar cell piece Al-BSF surface2Gap, and cause the electric iron 4 soldering tip 5 inclined-plane with
The Al-BSF surface of solar cell forms angle β, wherein, h2For 2.0mm, β is 25 °, soldering tip 5 it is perpendicular with direct of travel
The width w in direction be 5mm；
Then, the welding wire 6 that non-silver wire is formed is sent to the inclined-plane and the sun of the soldering tip 5 of the electric iron 4
In the gap that cell piece Al-BSF surface is formed, the welding wire 6 forms angle γ with Al-BSF surface, and γ is 30 °, between described
In gap, the welding wire 6 is heated to 350 DEG C by soldering tip 5, forms the molten metal of molten condition, the molten metal is in the soldering tip 5
Drive the surface of soldering flux band 3 described in lower edge to advance, and be adhered to the Al-BSF surface and form solder band 7, every solder band 7
Width is 4.0mm, and thickness is 3.0 μm；The edge of solder band 7 and the interval d at cell piece edge are 20mm, the solder band 7
Width is less than the width of the soldering flux band 3, and the solder band 7 after cooling forms the backplate of battery.
In the present embodiment, the welding wire 6 used is non-silver wire, specially tin zinc bismuth（Sn92Zn5.0Bi3.0）Alloy, weldering
The diameter of silk 6 elects 1.0mm as.
Embodiment 3
The present embodiment provides a kind of preparation method of back electrode of solar cell, comprises the following steps：
Step 1：The preparation of silicon chip
Be 156 × 156mm from specification, thickness be 180 μm（Before corrosion）Polysilicon chip, by the polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, silk-screen printing back field aluminum paste is used in whole shady face（Shuo He electronic materials limited company
The 108C aluminium pastes of production）And after drying, republish front side silver paste（The 17F silver pastes of Dupont companies production）, process of passing through tunnel stove burning
After knot, possessed the silicon chip of Al-BSF and positive electricity polar curve;
Step 2：The preparation of soldering flux
The triethanolamine of 80 mass parts is heated to 50 DEG C, adds the alkyd resin of 25 mass parts（The trade mark is
AK2380A, produced with moral Chemical Co., Ltd.）, the fluoboric acid cadmium of 17 mass parts is then added, 0.5h is stirred, makes alkyd resin
It is completely dissolved with fluoboric acid cadmium, obtains uniform soldering agent solution；
Step 3：The preparation of back electrode
First, the surface spraying liquid flux using automatic spraying machine to the Al-BSF, the automatic spraying attachment
There is spray gun 1, the nozzle diameter of the spray gun 1 is 28 μm, and the angle α that the axis of the nozzle is formed with the Al-BSF surface is
75 °, the distance h of the front end of the nozzle and the Al-BSF surface1For 2.0mm, the mobile linear velocity of the cell piece is
110mm/s, 3 soldering flux bands 3 are obtained, the width of every soldering flux band 3 is 20mm, and thickness is 15 μm；
Then, the soldering tip 5 for having bevelled electric iron 4 is moved to above the Al-BSF so that the inclined-plane is most
It is h that end forms height with solar cell piece Al-BSF surface2Gap, and cause the electric iron 4 soldering tip 5 inclined-plane with
The Al-BSF surface of solar cell forms angle β, wherein, h2For 1.5mm, β is 30 °, soldering tip 5 it is vertical with direct of travel
The width w in direction is 10mm；
Then, the welding wire 6 that non-silver wire is formed is sent to the inclined-plane and the sun of the soldering tip 5 of the electric iron 4
In the gap that cell piece Al-BSF surface is formed, the welding wire 6 forms angle γ with Al-BSF surface, and γ is 60 °, in institute
State in gap, the welding wire 6 is heated to 400 DEG C by soldering tip 5, forms the molten metal of molten condition, the molten metal is in the weldering
The surface of soldering flux band 3 described in first 5 drive lower edge is advanced, and is adhered to the Al-BSF surface and is formed solder band 7, every solder
It is 10mm with 7 width, thickness is 5 μm；The edge of solder band 7 and the interval d at cell piece edge are 12mm, the solder band 7
Width be less than the width of the soldering flux band 3, the solder band 7 after cooling forms the backplate of battery.
In the present embodiment, the welding wire 6 used is non-silver wire, specially tin zinc bismuth antimony（Sn90Zn5.0Bi3.0Sb2.0）
Alloy, the diameter of welding wire 6 elect 2.0mm as.
Embodiment 4
The present embodiment provides a kind of preparation method of back electrode of solar cell, comprises the following steps：
Step 1：The preparation of silicon chip
Be 156 × 156mm from specification, thickness be 180 μm（Before corrosion）Polysilicon chip, by the polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, silk-screen printing back field aluminum paste is used in whole shady face（Shuo He electronic materials limited company
The 108C aluminium pastes of production）And after drying, republish front side silver paste（The 17F silver pastes of Dupont companies production）, process of passing through tunnel stove burning
After knot, possessed the silicon chip of Al-BSF and positive electricity polar curve;
Step 2：The preparation of soldering flux
The triethanolamine of 60 mass parts is heated to 58 DEG C, adds the phenolic resin of 20 mass parts（The trade mark is 2402, on
Extra large resin processing plant of Xinhua production）, the zinc fluoroborate of 20 mass parts is then added, 1.5h is stirred, makes phenolic resin and zinc fluoroborate complete
Fully dissolved, obtain uniform soldering agent solution；
Step 3：The preparation of back electrode
First, the surface spraying liquid flux using automatic spraying machine to the Al-BSF, the automatic spraying attachment
There is spray gun 1, the nozzle diameter of the spray gun 1 is 20 μm, and the angle α that the axis of the nozzle is formed with the Al-BSF surface is
85 °, the distance h of the front end of the nozzle and the Al-BSF surface1For 3.0mm, the mobile linear velocity of the cell piece is
110mm/s, 3 soldering flux bands 3 are obtained, the width of every soldering flux band 3 is 5.0mm, and thickness is 2.0 μm；
Then, the soldering tip 5 for having bevelled electric iron 4 is moved to above the Al-BSF so that the inclined-plane is most
It is h that end forms height with solar cell piece Al-BSF surface2Gap, and cause the electric iron 4 soldering tip 5 inclined-plane with
The Al-BSF surface of solar cell forms angle β, wherein, h2For 0.2 mm, β is 5 °, soldering tip 5 it is vertical with direct of travel
The width w in direction is 3mm；
Then, the welding wire 6 that non-silver wire is formed is sent to the inclined-plane and the sun of the soldering tip 5 of the electric iron 4
In the gap that cell piece Al-BSF surface is formed, the welding wire 6 forms angle γ with Al-BSF surface, and γ is 50 °, in institute
State in gap, the welding wire 6 is heated to 450 DEG C by soldering tip 5, forms the molten metal of molten condition, the molten metal is in the weldering
The surface of soldering flux band 3 described in first 5 drive lower edge is advanced, and is adhered to the Al-BSF surface and is formed solder band 7, every solder
It is 2.0mm with 7 width, thickness is 0.2 μm；The edge of solder band 7 and the interval d at cell piece edge are 10mm, the solder
It is less than the width of the soldering flux band 3 with 7 width, the solder band 7 after cooling forms the backplate of battery.
In the present embodiment, the welding wire 6 used is non-silver wire, specially tin zinc（Sn95Zn5.0）Alloy, welding wire 6
Diameter elects 0.2mm as.
Embodiment 5
The present embodiment provides a kind of preparation method of back electrode of solar cell, comprises the following steps：
Step 1：The preparation of silicon chip
Be 156 × 156mm from specification, thickness be 180 μm（Before corrosion）Polysilicon chip, by the polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, silk-screen printing back field aluminum paste is used in whole shady face（Shuo He electronic materials limited company
The 108C aluminium pastes of production）And after drying, republish front side silver paste（The 17F silver pastes of Dupont companies production）, process of passing through tunnel stove burning
After knot, possessed the silicon chip of Al-BSF and positive electricity polar curve；
Step 2：The preparation of soldering flux
The triethanolamine of 83 mass parts is heated to 58 DEG C, add 12 mass parts epoxy resin (trade mark DER317,
LG-DOW company produces), the zinc fluoroborate of 5 mass parts is then added, 1.6h is stirred, makes epoxy resin and zinc fluoroborate complete
Dissolving, obtains uniform soldering agent solution；
Step 3：The preparation of back electrode
First, the surface spraying liquid flux using automatic spraying machine to the Al-BSF, the automatic spraying attachment
There is spray gun 1, the nozzle diameter of the spray gun 1 is 50 μm, and the angle α that the axis of the nozzle is formed with the Al-BSF surface is
80 °, the distance h of the front end of the nozzle and the Al-BSF surface1For 45mm, the mobile linear velocity of the cell piece is
100mm/s, 3 soldering flux bands 3 are obtained, the width of every soldering flux band 3 is 8mm, and thickness is 20 μm；
Then, the soldering tip 5 for having bevelled electric iron 4 is moved to above the Al-BSF so that the inclined-plane is most
It is h that end forms height with solar cell piece Al-BSF surface2Gap, and cause the electric iron 4 soldering tip 5 inclined-plane with
The Al-BSF surface of solar cell forms angle β, wherein, h2For 0.8mm, β is 18 °, soldering tip 5 it is perpendicular with direct of travel
The width w in direction be 8.0mm；
Then, the welding wire 6 that non-silver wire is formed is sent to the inclined-plane and the sun of the soldering tip 5 of the electric iron 4
In the gap that cell piece Al-BSF surface is formed, the welding wire 6 forms angle γ with Al-BSF surface, and γ is 60 °, in institute
State in gap, the welding wire 6 is heated to 300 DEG C by soldering tip 5, forms the molten metal of molten condition, the molten metal is in the weldering
The surface of soldering flux band 3 described in first 5 drive lower edge is advanced, and is adhered to the Al-BSF surface and is formed solder band 7, every solder
It is 8.0mm with 7 width, thickness is 20 μm；The edge of solder band 7 and the interval d at cell piece edge are 18mm, the solder band
7 width is less than the width of the soldering flux band 3, and the solder band 7 after cooling forms the backplate of battery.
In the present embodiment, for the welding wire 6 used for non-silver wire, specially pure tin, the diameter of welding wire 6 elects 0.6mm as.
Embodiment 6
The present embodiment provides a kind of preparation method of back electrode of solar cell, comprises the following steps：
Step 1：The preparation of silicon chip
Be 156 × 156mm from specification, thickness be 180 μm（Before corrosion）Polysilicon chip, by the polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, silk-screen printing back field aluminum paste is used in whole shady face（Shuo He electronic materials limited company
The 108C aluminium pastes of production）And after drying, republish front side silver paste（The 17F silver pastes of Dupont companies production）, process of passing through tunnel stove burning
After knot, possessed the silicon chip of Al-BSF and positive electricity polar curve;
Step 2：The preparation of soldering flux
The triethanolamine of 64 mass parts is heated to 55 DEG C, adds the aldehyde ketone resin of 12 mass parts（The trade mark is UK300,
Hindustan ink resins company of India produces）, then add the zinc fluoroborates of 24 mass parts, stir 1h, make aldehyde ketone resin and
Zinc fluoroborate is completely dissolved, and obtains uniform soldering agent solution；
Step 3：The preparation of back electrode
First, the surface spraying liquid flux using automatic spraying machine to the Al-BSF, the automatic spraying attachment
There is spray gun 1, the nozzle diameter of the spray gun 1 is 5.0 μm, the angle α that the axis of the nozzle is formed with the Al-BSF surface
For 90 °, the distance h of the front end of the nozzle and the Al-BSF surface1For 10mm, the mobile linear velocity of the cell piece is
100mm/s, 3 soldering flux bands 3 are obtained, the width of every soldering flux band 3 is 6.0mm, and thickness is 40 μm；
Then, the soldering tip 5 for having bevelled electric iron 4 is moved to above the Al-BSF so that the inclined-plane with too
It is h that positive cell piece Al-BSF surface, which forms height,2Gap, and cause the electric iron 4 soldering tip 5 inclined-plane and solar-electricity
The Al-BSF surface in pond forms angle β, wherein, h2For 0.1mm, β is 20 °, the direction perpendicular with direct of travel of soldering tip 5
Width w is 6.0mm；
Then, the welding wire 6 that non-silver wire is formed is sent to the inclined-plane and the sun of the soldering tip 5 of the electric iron 4
In the gap that cell piece Al-BSF surface is formed, the welding wire 6 forms angle γ with Al-BSF surface, and γ is 35 °, in institute
State in gap, the welding wire 6 is heated to 450 DEG C by soldering tip 5, forms the molten metal of molten condition, the molten metal is in the weldering
The surface of soldering flux band 3 described in first 5 drive lower edge is advanced, and is adhered to the Al-BSF surface and is formed solder band 7, every solder
It is 3.0mm with 7 width, thickness is 1.0 μm；The edge of solder band 7 and the interval d at cell piece edge are 18mm, the solder
It is less than the width of the soldering flux band 3 with 7 width, the solder band 7 after cooling forms the backplate of battery.
In the present embodiment, the welding wire 6 used is non-silver wire, specially tin zinc（Sn95Zn5.0）Alloy, welding wire 6
Diameter elects 0.5mm as.
Embodiment 7
The present embodiment provides a kind of preparation method of back electrode of solar cell, comprises the following steps：
Step 1：The preparation of silicon chip
Be 156 × 156mm from specification, thickness be 180 μm（Before corrosion）Polysilicon chip, by the polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, silk-screen printing back field aluminum paste is used in whole shady face（Shuo He electronic materials limited company
The 108C aluminium pastes of production）And after drying, republish front side silver paste（The 17F silver pastes of Dupont companies production）, process of passing through tunnel stove burning
After knot, possessed the silicon chip of Al-BSF and positive electricity polar curve;
Step 2：The preparation of soldering flux
The triethanolamine of 61 mass parts is heated to 55 DEG C, adds the polyketone resin of 13 mass parts（The trade mark is CF120,
Ke Lifu Industrial Co., Ltd.s of Shenzhen produce）, then add the zinc fluoroborates of 26 mass parts, stir 1h, make polyketone resin and
Zinc fluoroborate is completely dissolved, and obtains uniform soldering agent solution；
Step 3：The preparation of back electrode
First, the surface spraying liquid flux using automatic spraying machine to the Al-BSF, the automatic spraying attachment
There is spray gun 1, the nozzle diameter of the spray gun 1 is 40 μm, and the angle α that the axis of the nozzle is formed with the Al-BSF surface is
60 °, the distance h of the front end of the nozzle and the Al-BSF surface1For 30mm, the mobile linear velocity of the cell piece is
120mm/s, 3 soldering flux bands 3 are obtained, the width of every soldering flux band 3 is 5.0mm, and thickness is 2.0 μm；
Then, the soldering tip 5 for having bevelled electric iron 4 is moved to above the Al-BSF so that the inclined-plane is most
It is h that end forms height with solar cell piece Al-BSF surface2Gap, and cause the electric iron 4 soldering tip 5 inclined-plane with
The Al-BSF surface of solar cell forms angle β, wherein, h2For 1.0 mm, β is 30 °, soldering tip 5 it is vertical with direct of travel
The width w in direction be 4.0mm,
Then, the welding wire 6 that non-silver wire is formed is sent to the inclined-plane and the sun of the soldering tip 5 of the electric iron 4
In the gap that cell piece Al-BSF surface is formed, the welding wire 6 forms angle γ with Al-BSF surface, and γ is 50 °, in institute
State in gap, the welding wire 6 is heated to 500 DEG C by soldering tip 5, forms the molten metal of molten condition, the molten metal is in the weldering
The surface of soldering flux band 3 described in first 5 drive lower edge is advanced, and is adhered to the Al-BSF surface and is formed solder band 7, every solder
It is 3.0mm with 7 width, thickness is 0.8 μm；The edge of solder band 7 and the interval d at cell piece edge are 5.0mm, the solder
It is less than the width of the soldering flux band 3 with 7 width, the solder band 7 after cooling forms the backplate of battery.
In the present embodiment, the welding wire 6 used is non-silver wire, specially tin zinc（Sn95Zn5.0）Alloy, welding wire 6
Diameter elects 0.5mm as.
Embodiment 8
The present embodiment provides a kind of preparation method of back electrode of solar cell, comprises the following steps：
Step 1：The preparation of silicon chip
Be 156 × 156mm from specification, thickness be 180 μm（Before corrosion）Polysilicon chip, by the polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, silk-screen printing back field aluminum paste is used in whole shady face（Shuo He electronic materials limited company
The 108C aluminium pastes of production）And after drying, republish front side silver paste（The 17F silver pastes of Dupont companies production）, process of passing through tunnel stove burning
After knot, possessed the silicon chip of Al-BSF and positive electricity polar curve;
Step 2：The preparation of soldering flux
The triethanolamine of 70 mass parts is heated to 55 DEG C, adds the ethyl cellulose of 10 mass parts（Viscosity specification is
20mPas, the production of LG-DOW company）, it is 1 in mass ratio then to add 20 mass parts：The zinc fluoroborate and fluorine boron of 1 mixing
The mixture of sour ammonium, 1h is stirred, the mixture of ethyl cellulose, zinc fluoroborate and ammonium fluoroborate is completely dissolved, obtained
Even soldering agent solution；
Step 3：The preparation of back electrode
First, the surface spraying liquid flux using automatic spraying machine to the Al-BSF, the automatic spraying attachment
There is spray gun 1, the nozzle diameter of the spray gun 1 is 35 μm, and the angle α that the axis of the nozzle is formed with the Al-BSF surface is
60 °, the distance h of the front end of the nozzle and the Al-BSF surface1For 30mm, the mobile linear velocity of the cell piece is
120mm/s, obtain 3 soldering flux bands 3；The width of every soldering flux band 3 is 11mm, and thickness is 3.0 μm；
Then, the soldering tip 5 for having bevelled electric iron 4 is moved to above the Al-BSF so that the inclined-plane is most
It is h that end forms height with solar cell piece Al-BSF surface2Gap, and cause the electric iron 4 soldering tip 5 inclined-plane with
The Al-BSF surface of solar cell forms angle β, wherein, h2For 0.5mm, β is 30 °, soldering tip 5 it is vertical with direct of travel
The width w in direction is 8.0mm；
Then, the welding wire 6 that non-silver wire is formed is sent to the inclined-plane and the sun of the soldering tip 5 of the electric iron 4
In the gap that cell piece Al-BSF surface is formed, the welding wire 6 forms angle γ with Al-BSF surface, and γ is 60 °, in institute
State in gap, the welding wire 6 is heated to 300 DEG C by soldering tip 5, forms the molten metal of molten condition, the molten metal is in the weldering
The surface of soldering flux band 3 described in first 5 drive lower edge is advanced, and is adhered to the Al-BSF surface and is formed solder band 7, every solder
It is 5.0mm with 7 width, thickness is 3.0 μm；The edge of solder band 7 and the interval d at cell piece edge are 8.0mm, the solder
It is less than the width of the soldering flux band 3 with 7 width, the solder band 7 after cooling forms the backplate of battery.
In the present embodiment, the welding wire 6 used is non-silver wire, specially tin zinc（Sn95Zn5.0）Alloy, welding wire 6
Diameter elects 0.8mm as.
Embodiment 9
The present embodiment provides a kind of preparation method of back electrode of solar cell, comprises the following steps：
Step 1：The preparation of silicon chip
Be 156 × 156mm from specification, thickness be 180 μm（Before corrosion）Polysilicon chip, by the polycrystalline silicon texturing,
After PN junction processed, coated with antireflection film, silk-screen printing back field aluminum paste is used in whole shady face（Shuo He electronic materials limited company
The 108C aluminium pastes of production）And after drying, republish front side silver paste（The 17F silver pastes of Dupont companies production）, process of passing through tunnel stove burning
After knot, possessed the silicon chip of Al-BSF and positive electricity polar curve;
Step 2：The preparation of soldering flux
The triethanolamine of 72 mass parts is heated to 55 DEG C, adds in mass ratio the 1 of 3 mass parts:The ethyl of 1 mixing is fine
Dimension element（Viscosity specification is 20mPas, and LG-DOW company produces）And alkyd resin（AK2380A, with moral Chemical Co., Ltd.
Production）Mixture, then add the zinc fluoroborates of 25 mass parts, stir 1.0h, make the mixed of ethyl cellulose and alkyd resin
Compound and zinc fluoroborate are completely dissolved, and obtain uniform soldering agent solution；
Step 3：The preparation of back electrode
First, the surface spraying liquid flux using automatic spraying machine to the Al-BSF, the automatic spraying attachment
There is spray gun 1, the nozzle diameter of the spray gun 1 is 40 μm, and the angle α that the axis of the nozzle is formed with the Al-BSF surface is
60 °, the distance h of the front end of the nozzle and the Al-BSF surface1For 3.0mm, the mobile linear velocity of the cell piece is
120mm/s, 3 soldering flux bands 3 are obtained, the width of every soldering flux band 3 is 8.0mm, and thickness is 5.0 μm；
Then, the soldering tip 5 for having bevelled electric iron 4 is moved to above the Al-BSF so that the inclined-plane is most
It is h that front end forms height with solar cell piece Al-BSF surface2Gap, and cause the electric iron 4 soldering tip 5 inclined-plane with
The Al-BSF surface of solar cell forms angle β, wherein, h2For 0.50 mm, β is 30 °, soldering tip 5 it is vertical with direct of travel
The width w in direction be 6.0mm；
Then, the welding wire 6 that non-silver wire is formed is sent to the most end on the inclined-plane of the soldering tip 5 of the electric iron 4
In the gap that end is formed with solar cell piece Al-BSF surface, the welding wire 6 forms angle γ, γ with Al-BSF surface and is
30 °, in the gap, the welding wire 6 is heated to 500 DEG C by soldering tip 5, forms the molten metal of molten condition, the molten metal
The surface of soldering flux band 3 described in drive lower edge in the soldering tip 5 is advanced, and is adhered to the Al-BSF surface and is formed solder band 7,
The width of every solder band 7 is 5.0mm, and thickness is 10 μm；The edge of solder band 7 and the interval d at cell piece edge are 15mm, institute
The width for stating solder band 7 is less than the width of the soldering flux band 3, and the solder band 7 after cooling forms the backplate of battery.
In the present embodiment, the welding wire 6 used is non-silver wire, specially tin zinc（Sn95Zn5.0）Alloy, welding wire 6
Diameter elects 1.0mm as.
Comparative example 1
The back electrode of solar cell is prepared using the patent CN102248243A methods provided.
Silicon chip is prepared using step 1 same as Example 1, then using ultrasonic wave electric iron automatic welder（The equipment
Main function components be ultrasonic wave electric iron, the production of MECS Inc. of South Korea, model MR-5030）Constructed, soldering tip temperature
380 ± 20 DEG C are arranged to, ultrasonic frequency is 30K ± 1K hertz, and the power output of ultrasonic wave electric iron is 500W.Wire
Material uses tin zinc（Sn95Zn5.0）The spacing distance of alloy, wire and Al-BSF is 0.1 ~ 0.3mm, by the electricity of bonding machine
Wire is heated and melted by the plumb joint of flatiron, then fused mass is continuously coated on to the Al-BSF surface of silicon chip, after cooling i.e.
Obtain that there is continuous band-shaped back electrode band；Width and the thickness for obtaining back electrode band are same as Example 1.Pass through above-mentioned step
Suddenly, the solar battery sheet of this comparative example is obtained.
Comparative example 2
Back electrode of solar cell is prepared using the method for traditional silk-screened back silver paste.
Preparation specification is 156 × 156mm, and thickness is 180 μm（Before corrosion）Polysilicon chip, by polycrystalline silicon texturing, system
After PN junction, coated with antireflection film, first using silk-screen printing back side silver paste（The PV505 silver pastes of Dupont companies）, carry on the back silver-colored structure and use
Three four sections of lines are made（I.e. back of the body silver is three, every each four sections）, printing weight in wet base is 40 ~ 45mg, is then dried, in the remaining back of the body of back silver paste
Smooth surface part, print back field aluminum paste（The 108C aluminium pastes of Shuo He electronic materials limited company production）, after drying, then to light
Print front side silver paste in face（The 17F silver pastes of Dupont companies production）, after process of passing through tunnel stove sintering, what obtained traditional handicraft made
The silver-colored back electrode band of Disjunct distribution.By above-mentioned steps, the solar battery sheet of this comparative example is obtained.
Performance test
1. fragment hidden splits rate：10000 batteries are prepared using the preparation method described in embodiment and comparative example, used
Fragmentation figures are visually observed, using EL testers（Electroluminescent tester, many gloomy productions in Shaanxi）Cell piece is hidden splits situation for test,
It is shown in Table 1, fragment in table 1 or hidden splits average value of the rate for 10000 batteries.
2. adhesive force：100 batteries are prepared using the preparation method described in embodiment and comparative example, win footpath between fields from Shanghai
1.2 × 0.2mm tin-lead weldings, dried after being soaked with Henkel X32-10I types scaling powder, then in 320 DEG C of back of the body electricity to preparing
Pole carries out manual welding, after cell piece natural cooling, using mountain degree SH-100 puller systems to being in 45 ° between welding and cell piece
At the uniform velocity stretch, record crest value tension when welding and cell piece are peeled off, and then obtain adhering to force data, be shown in Table 1, it is attached in table 1
Average value of the force data for 100 batteries.
3. average photoelectric efficiency：Each cell piece is tested to obtain using single flash operation simulation test instrument.Test-strips
Part is standard test condition（STC）：Light intensity：1000W/m2；Spectrum：AM1.5；Temperature：25℃.
Table 1
| Fragmentation hidden splits rate | Adhesive force | Average photoelectric efficiency | |
| Embodiment 1 | 5.3%% | 13.4 | 17.66% |
| Embodiment 2 | 5.0%% | 13.3 | 17.65% |
| Embodiment 3 | 5.4%% | 13.6 | 17.68% |
| Embodiment 4 | 5.5%% | 13.0 | 17.62% |
| Embodiment 5 | 5.1%% | 13.8 | 17.64% |
| Embodiment 6 | 5.3%% | 13.2 | 17.63% |
| Embodiment 7 | 5.2%% | 13.1 | 17.62% |
| Embodiment 8 | 5.0%% | 13.4 | 17.66% |
| Embodiment 9 | 5.3%% | 13.2 | 17.65% |
| Comparative example 1 | 23%% | 13.3 | 17.64% |
| Comparative example 2 | 0.3%% | 3.30 | 17.62% |
The fragment of the back electrode prepared using the method for the present invention is can be seen that from the test result of table 1 or hidden to split rate small
In using ultrasonic wave electric iron weldering welding back electrode band（Comparative example 1）Fragment or hidden split rate, and adhesive force between the two
And average photoelectric transformation efficiency approaches.Using traditional silk-screened back silver paste（Comparative example 2）Method prepare back electrode, although
Its fragmentation or it is hidden split rate very little, but its adhesive force is low more than battery prepared by the method using the present invention, it is often more important that, the biography
The material cost of system method is high.
Data above illustrates, using the back electrode of solar cell of preparation method provided by the invention preparation, fragmentation or hidden
Split that rate is low, the adhesive force of solder band and Al-BSF is strong, with the welding performance of photovoltaic welding belt might as well, average photoelectric efficiency conforms to
Ask, the low manufacture cost of electrode.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.For
For those of ordinary skill in the art, other various forms of changes or change can also be made on the basis of the above description
It is dynamic.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change or change thus extended out
Among moving still in the protection domain of the invention.
Claims (24)
1. a kind of preparation method of back electrode of solar cell, it is characterised in that comprise the following steps：
S10：Some soldering flux bands formed by soldering flux are formed on the Al-BSF surface of solar cell；
S20：Non-silver metal welding wire is adhered to by way of soldering and formed by the Al-BSF surface of soldering flux band covering
Solder band, back electrode is formed after the solder band cooling.
2. the preparation method of back electrode of solar cell according to claim 1, it is characterised in that：During soldering, the pricker
There is gap between solder flux band and soldering tip, the non-silver metal welding wire is heated to molten condition in the gap by the soldering tip, melts
Melt the non-silver metal of state under the drive of the soldering tip along the soldering flux Tape movement to be formed on the Al-BSF surface
The solder band.
3. the preparation method of the back electrode of solar cell according to claim 1 or 2, it is characterised in that：The soldering
Agent is triethanolamine-fluoboric acid salt form soldering flux.
4. the preparation method of back electrode of solar cell according to claim 3, it is characterised in that：The triethanolamine-
Fluoboric acid salt form soldering flux includes the component of following mass parts：The mass parts of borofluoride 5.0~30, organic adhesive 3.0~25
Mass parts, the mass parts of triethanolamine 60~95.
5. the preparation method of back electrode of solar cell according to claim 3, it is characterised in that：Borofluoride is fluorine boron
One or more of mixtures in sour zinc, ammonium fluoroborate, fluoboric acid cadmium.
6. the preparation method of back electrode of solar cell according to claim 4, the organic adhesive is ethyl cellulose
It is one or more of mixed in element, NC Nitroncellulose, alkyd resin, phenolic resin, epoxy resin, phenolic ketone resin or polyketone resin
Compound.
7. the preparation method of the back electrode of solar cell according to any one of claim 1-2, it is characterised in that：It is described
The width of soldering flux band is 5.0~20mm, and thickness is 2.0~40 μm.
8. the preparation method of back electrode of solar cell according to claim 7, it is characterised in that：The soldering flux band
Width is 8.0~12mm, and thickness is 5.0~20 μm.
9. the preparation method of the back electrode of solar cell according to any one of claim 1-2, it is characterised in that：It is described
The both ends of the length direction of soldering flux band are respectively with forming interval d, d near the Al-BSF edge of the end
5.0~20mm.
10. the preparation method of the back electrode of solar cell according to any one of claim 1-2, it is characterised in that：
The surface of the Al-BSF forms some solder bands being parallel to each other.
11. the preparation method of the back electrode of solar cell according to any one of claim 1-2, it is characterised in that：Institute
State the width of width≤soldering flux band of solder band.
12. the preparation method of back electrode of solar cell according to claim 11, it is characterised in that：The width of solder band
For 2.0~10mm, thickness is 0.2~20 μm.
13. the preparation method of back electrode of solar cell according to claim 12, it is characterised in that：The solder band
Width is 2.0~5.0mm, and thickness is 1.0~5.0 μm.
14. the preparation method of the back electrode of solar cell according to any one of claim 1-2, it is characterised in that：Institute
It is pure tin or tin alloy to state non-silver metal welding wire.
15. the preparation method of back electrode of solar cell according to claim 14, it is characterised in that：The tin alloy is
One kind of red brass, tin zinc bismuth alloy or tin zinc bismuth antimony alloy.
16. the preparation method of the back electrode of solar cell according to any one of claim 1-2, it is characterised in that：Institute
State a diameter of 0.2~2.0mm of non-silver metal welding wire.
17. the preparation method of back electrode of solar cell according to claim 16, it is characterised in that：The non-silver metal
A diameter of 0.8~1.0mm of welding wire.
18. the preparation method of the back electrode of solar cell according to any one of claim 1-2, it is characterised in that：Enter
During material, the non-silver metal welding wire is 30~60 ° with the angle γ that the Al-BSF surface is formed.
19. the preparation method of the back electrode of solar cell according to any one of claim 1-2, it is characterised in that：
In the step S10, the soldering agent solution containing soldering flux is finely sprayed into the Al-BSF by the way of spray gun spraying
Surface forms the soldering flux band.
20. the preparation method of back electrode of solar cell according to claim 19, it is characterised in that：The soldering flux is molten
Liquid by triethanolamine by being heated to 50~60 DEG C, then organic binder bond is added thereto, and is eventually adding borofluoride, stirs
0.5~2h, it is set fully to dissolve obtained.
21. the preparation method of back electrode of solar cell according to claim 19, it is characterised in that：The spray of the spray gun
A diameter of 5.0~50 μm of mouth, the vertical range h of the front end of the nozzle and the Al-BSF surface1For 2.0~50mm, institute
It is 60~90 ° to state the axis of nozzle and the angle α of Al-BSF surface formation.
22. the preparation method of back electrode of solar cell according to claim 2, it is characterised in that：The soldering tip is electricity
The soldering tip of flatiron, the soldering tip of the electric iron have the inclined-plane towards the Al-BSF surface, the front end on the inclined-plane and institute
State the vertical range h on Al-BSF surface2For 0.1~2.0mm, the inclined-plane is 5.0 with the angle β that the Al-BSF surface is formed
~30 °, the soldering tip of the electric iron is being 3.0~10mm with the width w on the perpendicular direction of its direct of travel.
23. the preparation method of back electrode of solar cell according to claim 22, it is characterised in that：The inclined-plane is most
The vertical range h of front end and the Al-BSF surface2The angle β formed for 0.2~1.0mm, the inclined-plane with Al-BSF surface
For 10~20 °.
24. the preparation method of back electrode of solar cell according to claim 2, it is characterised in that：The soldering tip adds
Hot temperature is 300~500 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310749971.1A CN104752554B (en) | 2013-12-31 | 2013-12-31 | A kind of preparation method of back electrode of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310749971.1A CN104752554B (en) | 2013-12-31 | 2013-12-31 | A kind of preparation method of back electrode of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104752554A CN104752554A (en) | 2015-07-01 |
| CN104752554B true CN104752554B (en) | 2018-03-13 |
Family
ID=53591943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310749971.1A Active CN104752554B (en) | 2013-12-31 | 2013-12-31 | A kind of preparation method of back electrode of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104752554B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356424B (en) * | 2016-09-20 | 2019-03-29 | 哈尔滨工业大学 | The method of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor |
| CN108963030A (en) * | 2018-06-14 | 2018-12-07 | 长安大学 | The preparation method of silicon-based nano structure photovoltaic material |
| CN110504045A (en) * | 2019-08-09 | 2019-11-26 | 江苏国瓷泓源光电科技有限公司 | A kind of crystal silicon solar batteries PERC aluminium paste of high-tensile strength and preparation method thereof |
| CN112719493B (en) * | 2020-12-23 | 2022-06-10 | 新疆大全新能源股份有限公司 | Process for welding babbit metal on bearing bush |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101480764A (en) * | 2009-02-05 | 2009-07-15 | 深圳市亿铖达工业有限公司 | Water-soluble aluminum and aluminum alloy soft soldering brazing flux as well as preparation method thereof |
| CN102139425A (en) * | 2011-04-13 | 2011-08-03 | 广州瀚源电子科技有限公司 | High-reliability soldering flux for aluminum soft soldering |
| CN102208490A (en) * | 2011-05-23 | 2011-10-05 | 武汉珈伟光伏照明有限公司 | Method and device for manufacturing solar cell electrode |
| CN102969406A (en) * | 2012-12-13 | 2013-03-13 | 常州比太科技有限公司 | Manufacturing method for electrodes of crystalline silicon solar cell |
| CN103182580A (en) * | 2011-12-29 | 2013-07-03 | 日清纺精密机器株式会社 | Flat wire soldering device used for solar cell |
-
2013
- 2013-12-31 CN CN201310749971.1A patent/CN104752554B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101480764A (en) * | 2009-02-05 | 2009-07-15 | 深圳市亿铖达工业有限公司 | Water-soluble aluminum and aluminum alloy soft soldering brazing flux as well as preparation method thereof |
| CN102139425A (en) * | 2011-04-13 | 2011-08-03 | 广州瀚源电子科技有限公司 | High-reliability soldering flux for aluminum soft soldering |
| CN102208490A (en) * | 2011-05-23 | 2011-10-05 | 武汉珈伟光伏照明有限公司 | Method and device for manufacturing solar cell electrode |
| CN103182580A (en) * | 2011-12-29 | 2013-07-03 | 日清纺精密机器株式会社 | Flat wire soldering device used for solar cell |
| CN102969406A (en) * | 2012-12-13 | 2013-03-13 | 常州比太科技有限公司 | Manufacturing method for electrodes of crystalline silicon solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104752554A (en) | 2015-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104752554B (en) | A kind of preparation method of back electrode of solar cell | |
| CN102891213B (en) | solar cell electrode made of active solder and method thereof | |
| CN102365689A (en) | Metal pastes and use thereof in the production of silicon solar cells | |
| CN104103335A (en) | Metal wire for solar energy battery back electrode and preparation method thereof, solar energy battery sheet and preparation thereof, and solar energy battery assembly | |
| CN102365688A (en) | Metal pastes and use thereof in the production of silicon solar cells | |
| CN102969406A (en) | Manufacturing method for electrodes of crystalline silicon solar cell | |
| CN104752531B (en) | Electrode slurry and back electrode of solar cell used for solar batteries and preparation method thereof | |
| CN103681942B (en) | The preparation method of crystalline silicon SE solar cell piece and crystalline silicon SE solar cell piece | |
| CN104028870A (en) | High-frequency induction solderingmethod for antennaon composite dielectric substrate | |
| CN103503080A (en) | Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell | |
| CN205406542U (en) | Photovoltaic module welds area | |
| CN104021836B (en) | Metal wire for solar cell back electrode and preparation method thereof, back electrode and preparation method thereof, solar cell sheet and cell assembly | |
| WO2017073299A1 (en) | Ultrasonic soldering method and ultrasonic soldering device | |
| CN101986436A (en) | Electrode structure of solar cell and preparation method thereof | |
| CN102642096A (en) | Solder, tin-plated solder strip adopting solder and preparation methods of solder and tin-plated solder strip | |
| CN106356424B (en) | The method of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor | |
| CN104021835B (en) | Metal wire for solar cell back electrode and preparation method thereof, back electrode and preparation method thereof, solar cell sheet and cell assembly | |
| CN108188613A (en) | A kind of active solder and its preparation method and application | |
| CN104143584A (en) | Manufacturing method of solar cell back electrode, solar cell and solar cell module | |
| CN104347736A (en) | Solar cell and solar cell assembly | |
| CN109509571A (en) | A kind of kamash alloy and copper strips composite material and preparation method | |
| CN104021839B (en) | A kind of back electrode of solar cell wire and preparation method, back electrode and preparation method, solar battery sheet and battery component | |
| CN104347735A (en) | Solar cell and solar cell assembly | |
| CN106001984A (en) | Magnesium alloy brazing filler metal based on rare earth magnesium alloy braze as well as preparation method and brazing technology of magnesium alloy brazing filler metal | |
| CN111040632A (en) | Photovoltaic precoating material, precoating welding strip and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |