CN104347735A - Solar cell and solar cell assembly - Google Patents
Solar cell and solar cell assembly Download PDFInfo
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- CN104347735A CN104347735A CN201310316299.7A CN201310316299A CN104347735A CN 104347735 A CN104347735 A CN 104347735A CN 201310316299 A CN201310316299 A CN 201310316299A CN 104347735 A CN104347735 A CN 104347735A
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- solar battery
- battery sheet
- back electrode
- surface field
- back surface
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- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 54
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000004411 aluminium Substances 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 32
- 239000007921 spray Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000010891 electric arc Methods 0.000 claims description 9
- 238000000889 atomisation Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 7
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 5
- NZWXMOTXTNDNLK-UHFFFAOYSA-N [Cu].[Zn].[Ag] Chemical compound [Cu].[Zn].[Ag] NZWXMOTXTNDNLK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 238000002485 combustion reaction Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 24
- 229910052709 silver Inorganic materials 0.000 description 22
- 239000004332 silver Substances 0.000 description 22
- 238000003466 welding Methods 0.000 description 15
- 238000005507 spraying Methods 0.000 description 14
- 239000002002 slurry Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 8
- 238000007639 printing Methods 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 241000409201 Luina Species 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a solar cell. The solar cell comprises a silicon slice and an aluminum back surface field arranged at a back face of the silicon slice, and further comprises a whole-structure back electrode arranged on the aluminum back surface field, wherein the edge of the back electrode and the edge of the aluminum back surface field have a distance. The invention further provides a solar cell assembly containing the solar cell. The solar cell has relatively low internal resistance, so photoelectric conversion efficiency is high.
Description
Technical field
The invention belongs to area of solar cell, particularly relate to a kind of solar battery sheet and the solar module containing this solar battery sheet.
Background technology
The crystal silicon solar energy battery that current maturation is commercially produced is simple with its technological process, transformation efficiency is high, be convenient to the advantages such as large-scale production develops rapidly, and such battery occupies the share of more than 80% of photovoltaic market amount of batteries.Further, crystal silicon solar energy battery is expected to the mainstay becoming future electrical energy supply.
The method of the making crystalline silicon solar battery electrode of current business is metallization process, namely adopt the method for silk screen printing at shady face printing 2 ~ 3 back silver pastes of silicon chip, dry, and then except the region of printing back silver paste, print back aluminum slurry at the shady face of battery, dry, again at the phototropic face printing phototropic face silver slurry of battery, then burning freezing of a furnace first drying sintering forms.The program forms backplate after the zone sintering of shady face silver slurry, and form front electrode after the zone sintering of phototropic face silver slurry, technique is simply ripe.But the electricity conversion of the solar cell that the program prepares is lower.
Summary of the invention
The present invention is in order to the low technical problem of the electricity conversion that solves in prior art the solar cell adopting silk screen printing method for producing to obtain, and providing a kind of has certain a kind of solar battery sheet promoted and the solar module adopting this solar battery sheet to optoelectronic transformation efficiency.
Particularly, technical scheme of the present invention is:
A kind of solar battery sheet, comprises silicon chip and the aluminium back surface field being positioned at silicon chip back side; Also comprise the back electrode of the monolithic structure be positioned in aluminium back surface field, between the edge of described back electrode and the edge of aluminium back surface field, there is distance.
Present invention also offers a kind of solar module, described solar module comprises the backboard, sealant layer, cell piece, sealant layer and the photic zone that stack gradually; Wherein, described cell piece is solar battery sheet provided by the invention.
Solar battery sheet provided by the invention, wherein said back electrode shape is a monolithic structure, compared to silk screen print method of the prior art or welding cladding process, its formation process process is very fast, and the contact area of itself and aluminium back surface field is large, therefore high with aluminium back surface field bonding force, with photovoltaic welding belt good welding performance.In addition, the area of back electrode of the present invention is comparatively large, and the internal resistance of cell is effectively reduced; The area of aluminium back surface field increases to some extent compared to traditional silk-screened silver back electrode solar cell simultaneously, and the electricity conversion of solar battery sheet provided by the invention is also effectively promoted.
Accompanying drawing explanation
Fig. 1 is the side schematic view of solar battery sheet provided by the invention.
Fig. 2 is the shady face vertical view of solar cell provided by the invention.
In figure, 1---back electrode, 2---aluminium back surface field, 3---silicon chip.
Embodiment
The invention provides a kind of solar battery sheet, as shown in Figure 1 or 2, comprise silicon chip 3 and the aluminium back surface field 2 being positioned at silicon chip 3 back side; Also comprise the back electrode 1 of the monolithic structure be positioned in aluminium back surface field 2, between the edge of described back electrode 1 and the edge of aluminium back surface field 2, there is distance.
The present inventor is found by great many of experiments, affect at present the electricity conversion of solar cell because have a lot of aspect.The present invention is then from the viewpoint of the reduction internal resistance of cell, in the hope of improving the solar cell transformation efficiency of battery.And reduce the internal resistance of cell, mainly pass through the less noble metal of employing resistance at present as electrode material, but it will certainly improve battery cost of manufacture greatly.The present invention is then that the area by increasing back electrode reduces the internal resistance of cell.Therefore, in the present invention, the shape of described back electrode 1 is a monolithic structure, and its internal resistance is effectively reduced, and covers the most areas on aluminium back surface field 2 surface simultaneously, and when therefore adopting this back electrode collected current, internal resistance of cell value can reduce greatly.For preventing cell piece internal short-circuit, therefore in the present invention, between the edge of described back electrode 1 and the edge of aluminium back surface field 2, there is certain distance.If apart from excessive, then the area of back electrode 1 can be too small, less to the reducing effect of the internal resistance of cell; And apart from there is the potential safety hazard of internal short-circuit of battery time too small; Therefore, the present inventor is found by further experiment, under preferable case, comparatively suitable when the distance at the edge of the Edge Distance aluminium back surface field of described back electrode is 5.0 ~ 20mm.
In the present invention, the shape of described back electrode is whole piece structure, and particularly, or it can be square structure, other shape of circular configuration of a bulk, and the present invention is not particularly limited.
In the present invention, the thickness of described back electrode 1 is 0.5 ~ 50 micron, is preferably 1.0 ~ 20 microns, is more preferably 3.0 ~ 10 microns.
The present inventor is by realizing finding, current silk screen printing method for producing solar cell exists the high subject matter of cost and is that the electrode material cost that it adopts is high, namely adopts expensive noble metal; Inventor finds, can reduce the cost of solar battery sheet from two aspects: (1) adopts the relatively cheap non-silver material of price to substitute existing silk screen printing and obtains conductive silver paste; (2) electrode slurry consumption is reduced, specifically can by improving circuit precision or changing electrode shape.Due in the present invention, the shape of back electrode 1 is a monolithic structure, and it covers the most areas on aluminium back surface field 2 surface, and therefore its electrode material consumption will certainly increase, and battery cost may be caused to increase.Therefore, the present inventor passes through further experiment, especially by the material of other metal material adopting price relatively cheap as back electrode of the present invention, to substitute existing silver electrode.Therefore, as a kind of preferred implementation of the present invention, in the present invention, the material of described back electrode can adopt in fine copper, ormolu, Kufil, copper zinc-silver alloy one or more, its price reduces all greatly compared to silver electrode, therefore can not increase battery cost of manufacture while guarantee back electrode area increases.
In addition, in conventional silver back electrode solar cell, first at silicon chip back side electrode zone printed back electrode silver plasm, then republish back field aluminum paste in other region except electrode zone, after sintering, form aluminium back surface field and silver-colored back electrode.And in the present invention, then form aluminium back surface field 2 at the whole shady face of silicon chip 3, then in aluminium back surface field 2, form the back electrode 1 of monolithic structure, therefore in solar battery sheet provided by the invention the area of aluminium back surface field 2 comparatively conventional silver back electrode solar cell increase to some extent, make the electricity conversion of solar battery sheet provided by the invention obtain promoting further effectively.
In the present invention, the step forming aluminium back surface field 2 at silicon chip 3 back side is known to the skilled person, and does not repeat herein.As the common practise of those skilled in the art, the phototropic face of described silicon chip 3 also has positive electrode (attached not shown), this positive electrode can be formed by sintering after printing phototropic face conventional in prior art silver slurry, and the present invention is not particularly limited, and repeats no more herein.
In the present invention, the back electrode of described monolithic structure, it can be formed by conventional silk screen printing, is also formed by additive method; Because back electrode of the present invention is a monolithic structure, compared to the banded silver electrode method of existing silk screen printing, it reduces greatly to electrode required precision, and therefore back electrode makes and requires also greatly to be reduced, and the process time shortens greatly.As a kind of preferred implementation of the present invention, described back electrode of solar cell is prepared by following steps:
S10, adopt electric arc, plasma arc or combustion flame to be heated to melting charging wire and/or metal powder, form point molten metal;
Point molten metal atomization is formed metallic by S20, then employing Compressed Gas, and carries metallic motion, and finally deposit to the aluminium back surface field surface of solar cell, the metal coating of a formation monolithic structure, namely obtains described back electrode.
The above-mentioned method preferably preparing back electrode, particular by being atomized by Compressed Gas after the first melting of electric arc, plasma arc or combustion flame again and depositing (i.e. hot spray process) formation, without the need to heating battery sheet in advance.Particularly, the step of hot spray process is: first adopt electric arc, plasma arc or combustion flame to produce heat to electrode metal (such as wire or metal powder) and carry out heat fused, then with high velocity air, molten metal is atomized, and accelerates to make them spray to the technology of surface of the work formation metal coating to the metallic of atomization.Sprayed on material (metallic namely after atomization) is cooled in the process of flight deposition, in spraying application, the thermal impact of matrix is very little, heating temperature is no more than 200 DEG C, matrix (i.e. the silicon substrate of solar battery sheet and aluminium back surface field overall) can not deform and performance change, coating quality is stablized, and the coated shape that spraying obtains and thickness easily control.
As a kind of preferred implementation of the present invention, when charging metal adopts wire, the method being heated to melting is preferably arc process.Adopt the temperature of arc heating can reach 5000 ~ 5500 DEG C, therefore can Flashmelt metal or alloy, Compressed Gas can make the speed of metallic reach 200 ~ 300 meter per seconds simultaneously, and therefore the bond strength on the metal coating that obtains of the method and aluminium back surface field surface is high.Meanwhile, during arc process heating hot metal, also can simultaneously composite wire charging, spray efficiency is also high.As the common practise of those skilled in the art, arc process adopts common various electric arc spraying equipments in prior art to carry out, and such as can adopt arc-spraying machine, electric arc spraying equipment is provided with meticulous spray gun.Namely in the present invention, the spray gun on electric arc spraying equipment is adopted to carry out heating and melting to charging metal, then adopt Compressed Gas that motlten metal is atomized, and metal coating is formed to the aluminium back surface field surface that the metallic of atomization accelerates to make them spray to solar cell, namely this metal coating forms back electrode of solar cell.
In the present invention, described Compressed Gas only for being atomized by point molten metal, and carries the motion of the metallic after atomization.Compressed Gas can be compressed air, but is not limited to this.Under preferable case, oxidized when being atomized for preventing molten metal bath, reduce the content of oxide in the metal level spraying and obtain, make the electric conductivity of the coating obtained and better with the welding performance of photovoltaic welding belt, described Compressed Gas preferably adopts the inert gas that chemical reaction does not occur with motlten metal, is generally nitrogen, argon gas or helium.Consider from cost angle, Compressed Gas is more preferably nitrogen.
In conjunction with the diameter selecting the meticulous Spray gun nozzle of electric arc spraying, the Distance geometry spray time of the pressure of Compressed Gas during adjustment spraying, Spray gun nozzle and the aluminium back surface field of solar cell, can obtain on solar battery aluminum back surface field surface thickness evenly, densification, sharp-edged round shape back electrode.Under preferable case, the diameter of the Spray gun nozzle adopted is 50 ~ 1000 microns, and the pressure of Compressed Gas is preferably 0.6 ~ 1.0Mpa, and the distance of the aluminium back surface field of Spray gun nozzle and solar cell is 2.0 ~ 50mm, and spray time is 0.1 ~ 5.0s.
As previously mentioned, because in the present invention, the area of back electrode is larger, it makes raw material dosage increases, and for preventing the also corresponding increase of battery cost, price can be adopted in the present invention compared to cheaply a lot of other metal material of silver electrode to make the back electrode of solar cell of the present invention.Particularly, in the present invention, the wire that formation back electrode adopts or metal powder without the need to adopting noble metal (such as fine silver), and directly can adopt the various base metal being applicable to back electrode of solar cell material.Such as, the wire adopted when adopting the hot-spraying technique that preferably provides of the present invention to form back electrode or the material of metal powder can adopt in fine copper, ormolu, Kufil or copper zinc-silver alloy one or more.Accordingly, the material of the back electrode adopting the wire of aforementioned material or metal powder to be formed also is correspondingly one or more in fine copper, ormolu, Kufil or copper zinc-silver alloy.
Inventor is found by further experiment, in the present invention, preferred employing fine copper is as the material of wire in the present invention or metal powder, main cause is: pure copper material abundance, cheap, the volume resistance obtaining back electrode is relatively little (relative to the copper alloy etc. of formation being mixed with other metals, mix except silver), and with the good welding performance of its photovoltaic welding belt, weld strength is high.
Described wire prepares by following method: cast after being fused in proportion by each raw metal again, extrude, wire drawing obtains, but be not limited to this.Wherein, the metal simple-substance raw material that in raw metal i.e. its composition, each element is corresponding.Wherein, the technique of fusion, casting, extruding, wire drawing is conventionally known to one of skill in the art, and the present invention is not particularly limited, and repeats no more herein.Under preferable case, described diameter wiry is 0.1 ~ 2.0mm.
The preparation method of described metal powder can adopt the various methods preparing powder conventional in prior art to obtain, such as nitrogen atomization method, solution phase chemical reduction etc.Under preferable case, the middle particle diameter of described metal powder is 0.5 ~ 100 micron.
The present invention is adopted preferably to prepare the method for back electrode, it is without the need to heating battery sheet in advance, spraying can form the back electrode of monolithic structure of the present invention, preparation rapidly, raw materials consumption is few, and the back electrode thickness obtained is even, fine and close, neat in edge, high with aluminium back surface field bonding force, might as well with the welding performance of photovoltaic welding belt.
Finally, present invention also offers a kind of solar module, described solar module comprises the backboard, sealant layer, cell piece, sealant layer and the photic zone that stack gradually; Wherein, described cell piece is solar battery sheet provided by the invention.Wherein, backboard, sealant layer and euphotic structure and material are the common practise of those skilled in the art, and the present invention is not particularly limited.
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Embodiment 1 ~ 4
(1) preparation of cell piece before thermal spraying
Polysilicon chip specification is: 156 × 156mm, and thickness is 200 microns (before corrosion).After this polycrystalline silicon texturing, PN junction processed, coated with antireflection film, silk screen printing back field aluminum paste (the large standing grain science and technology in Taiwan is adopted at whole shady face, 108C aluminium paste) and after drying, republish front side silver paste (Dupont company, 17F silver slurry), after process of passing through tunnel stove sintering, possessed the silicon chip of aluminium back surface field and positive electricity polar curve.
(2) preparation of back electrode
(main function components of this equipment is arc-spraying machine to adopt the meticulous flush coater of automatic electric arc, Foshan company of section of China produces, model is 400) to construct, the diameter of Spray gun nozzle is 250 ± 5.0 microns, and the spacing distance of Spray gun nozzle and aluminium back surface field is 10 ± 2.0mm.Adopt arc-spraying machine by wire heating and melting, wherein composition wiry is as shown in table 1, diameter wiry is 0.5mm, employing pressure is that the compressed nitrogen of 0.8MPa carries out atomization formation metallic to point molten metal, and carry the aluminium back surface field surface that metallic motion is finally deposited on silicon chip, the back electrode of the square structure of 126mm × 126mm is become, as shown in Figure 2 at aluminium back surface field surface spraying; Concrete spray time is 1.00s, and the thickness of the back electrode of formation is 3.0 ~ 6.0 microns, and the distance at the edge of the Edge Distance aluminium back surface field of the back electrode of this square structure is 15mm.By above-mentioned steps, obtain the solar battery sheet of each embodiment, be designated as S1 ~ S4 respectively.
Embodiment 5
Adopt the wire of embodiment 1 same composition and identical step to prepare the solar battery sheet S5 of the present embodiment, difference is: in step (2), and adjustment spray time is 0.50s, and the thickness of the back electrode of formation is 1.0 ~ 3.0 microns; The shape of back electrode is the square structure of 146mm × 146mm, and the distance at the edge of its Edge Distance aluminium back surface field is 5mm.
Embodiment 6
Adopt the wire of embodiment 1 same composition and identical step to prepare the solar battery sheet S6 of the present embodiment, difference is: in step (2), and adjustment spray time is 2.00s, and the thickness of the back electrode of formation is 8.0 ~ 10 microns; The shape of back electrode is the square structure of 116mm × 116mm, and the distance at the edge of its Edge Distance aluminium back surface field is 20mm.
Comparative example 1
The step (1) identical with embodiment 1 is adopted to prepare cell piece, then silicon chip being heated to aluminium back surface field surface temperature is 200 ± 10 DEG C, then (main function components of this equipment is ultrasonic wave electric iron to adopt ultrasonic wave electric iron automatic welder(welding machine), MECS Inc. of Korea S produces, model is MR-5030) construct, plumb joint temperature is set to 380 ± 20 DEG C, ultrasonic frequency is 30K ± 1K hertz, the power output of ultrasonic wave electric iron is 500W, and composition wiry adopts common solder stick (to consist of Sn
99.3cu
0.7); The spacing distance of wire and aluminium back surface field is 0.1 ~ 0.3mm, relies on the electric soldering bit of bonding machine by wire heating and melting, then by the aluminium back surface field surface of fused mass continuous coating in silicon chip, namely obtains having continuous band-shaped back electrode band after cooling; Continuous coating 3 on a slice cell piece, the width obtaining back electrode band is 4.0 ~ 6.0mm, and thickness is 3.0 ~ 6.0 microns.By above-mentioned steps, obtain the solar battery sheet of this comparative example, be designated as DS1.
Comparative example 2
Polysilicon chip specification is: 156 × 156mm, and thickness is 200 microns (before corrosion), and before printing, thickness is 180 microns.After by silicon wafer wool making, PN junction processed, coated with antireflection film, first adopt silk screen printing back silver slurry (the PV505 silver slurry of Dupont company), carry on the back silver-colored structure and adopt four sections, three line system (namely carrying on the back silver is three), printing weight in wet base is 0.040g.Dry, in the remaining shady face part of back of the body silver slurry, printing back field aluminum paste (the large standing grain science and technology in Taiwan, 108C aluminium paste), after oven dry, then at phototropic face printing front side silver paste (Dupont company, 17F silver slurry), after process of passing through tunnel stove sintering, obtain the solar battery sheet DS2 possessing aluminium back surface field, silver-colored back electrode line and front electrode line.
Performance test
1, bonding force: select victory footpath between fields, Shanghai 1.2 × 0.2mm tin lead welding band, post-drying is soaked with Henkel X32-10I type scaling powder, then at 320 DEG C, manual welding is carried out to the back electrode prepared, after cell piece S1-S6 and DS1-DS2 cools naturally, mountain degree SH-100 puller system is used at the uniform velocity to stretch in 45 ° between welding and cell piece, crest value tension when record welding and cell piece are peeled off, unit is N/mm.
2, photoelectric efficiency: adopt single flash operation simulation test instrument to carry out test to each cell piece S1-S6 and DS1-DS2 and obtain.Test condition is standard test condition (STC): light intensity: 1000W/m
2; Spectrum: AM1.5; Temperature: 25 DEG C.
Each test is all got 100 cell pieces and is tested, and test result is averaged, as shown in table 1.
Table 1
Note: in upper table 1, symbol of element subscript represents the percent mass composition of this metallic element, as Cu
60zn
40represent that this alloy is made up of the copper of 60wt% and the zinc of 40wt%.
As can be seen from the test result of upper table 1, the bonding force of solar battery sheet S1 ~ S6 provided by the invention is more than 16.4N/mm.And comparative example 1 can not adopt metal copper wire to carry out ultrasonic bonding, common solder stick can only be adopted to weld, and the bonding force of the solar battery sheet DS1 obtained is only 13.5N/mm, the bonding force of the solar battery sheet DS2 adopting the method for comparative example 2 to prepare is only 5.60 N/mm.
Illustrate from above data, in solar battery sheet provided by the invention, the adhesive force of back electrode and aluminium back surface field is good, high with the bonding force of common photovoltaic welding belt, and the photoelectric conversion efficiency of solar battery sheet is obviously promoted simultaneously.In addition, the solar cell that the preferred embodiment for the present invention provides, the preparation of its back electrode does not use silver slurry, effectively reduces the material cost of electrode, adds the competitiveness of solar cell power generation and conventional batteries.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (14)
1. a solar battery sheet, comprises silicon chip and the aluminium back surface field being positioned at silicon chip back side; It is characterized in that, also comprise the back electrode of the monolithic structure be positioned in aluminium back surface field, between the edge of described back electrode and the edge of aluminium back surface field, there is distance.
2. solar battery sheet according to claim 1, is characterized in that, the distance at the edge of the Edge Distance aluminium back surface field of described back electrode is 5.0 ~ 20mm.
3. solar battery sheet according to claim 1, is characterized in that, the shape of described back electrode is square or circular.
4. solar battery sheet according to claim 1, is characterized in that, the thickness of described back electrode is 0.5 ~ 50 micron.
5. solar battery sheet according to claim 1, is characterized in that, the material of described back electrode is one or more in fine copper, ormolu, Kufil, copper zinc-silver alloy.
6. solar battery sheet according to claim 1, is characterized in that, described back electrode is prepared by following steps:
S10, adopt electric arc, plasma arc or combustion flame to be heated to melting charging wire and/or metal powder, form point molten metal;
Point molten metal atomization is formed metallic by S20, then employing Compressed Gas, and carries metallic motion, and finally deposit to the aluminium back surface field surface of solar cell, the metal coating of a formation monolithic structure, namely obtains described back electrode.
7. solar battery sheet according to claim 6, is characterized in that, described in be heated to melting method be arc process, charging metal is wire.
8. solar battery sheet according to claim 7, is characterized in that, the diameter of the Spray gun nozzle that described arc process adopts is 50 ~ 1000 microns, and the distance on the aluminium back surface field surface of Spray gun nozzle and solar cell is 2.0 ~ 50mm, and spray time is 0.1 ~ 5.0s.
9. solar battery sheet according to claim 6, is characterized in that, described Compressed Gas is nitrogen, argon gas or helium.
10. the solar battery sheet according to claim 5 or 8, is characterized in that, the pressure of described Compressed Gas is 0.6 ~ 1.0Mpa.
11. solar battery sheets according to claim 6, is characterized in that, the material of described wire or metal powder is one or more in fine copper, ormolu, Kufil, copper zinc-silver alloy.
12. solar battery sheets according to claim 6, is characterized in that, described diameter wiry is 0.1 ~ 2.0mm.
13. solar battery sheets according to claim 6, is characterized in that, the middle particle diameter of described metal powder is 0.5 ~ 100 micron.
14. 1 kinds of solar modules, described solar module comprises the backboard, sealant layer, cell piece, sealant layer and the photic zone that stack gradually; It is characterized in that, described cell piece is the solar battery sheet described in any one of claim 1 ~ 13.
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