CN104681123A - Solar battery back silver paste and preparing method thereof as well as solar battery and preparing method thereof - Google Patents
Solar battery back silver paste and preparing method thereof as well as solar battery and preparing method thereof Download PDFInfo
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Abstract
The invention provides a solar battery back silver paste. The solar battery back silver paste contains first silver powder, second silver powder, glass powder and organic carriers; by taking the total weight of the solar battery back silver paste as a reference, the content of the first silver powder is 20 to 25wt%, the content of the second silver powder is 25 to 30wt%, the content of the glass powder is 1 to 10wt% and the content of the organic carries is 30 to 55et%; the aperture of the first silver powder is 0.1 to 0.5 microns; the aperture of the second silver powder is 1 to 10 microns and the softening point temperature of the glass powder is 600 to 700 DEG C. The invention also provides a preparing method of the solar battery back paste, a method for preparing a solar battery by adopting the paste and the solar battery prepared by the method. The solar battery back silver paste provided by the invention is low in sintering temperature and simple in preparing method and has well welding performance; the manufacturing cost of a battery piece is greatly reduced and the photoelectric conversion efficiency of the solar battery is improved.
Description
Technical field
The invention belongs to technical field of solar batteries, be specifically related to a kind of back silver paste of solar cell and preparation method thereof, adopt the method that this back silver paste prepares solar cell and the solar cell prepared by the method.
Background technology
Solar energy is a kind of green energy resource, is more and more subject to people's attention, so solar cell arises at the historic moment because it is pollution-free, inexhaustible, not by advantages such as resource advantage restrictions.Solar cell is a kind of semiconductor device that solar energy can be converted to electric energy, and under the condition of illumination, solar cell can generation current, to be got up by electric collecting and transfer out by grid line and electrode.Wherein, back silver paste of solar cell is the chief component of solar cell electric slurry, and it is mainly used for making back side main grid in manufacture of solar cells, plays the effect of deriving of being confluxed by the electric current that aluminium back surface field is collected.
Rear surface of solar cell silver slurry forms primarily of silver powder, glass dust and organic carrier.Silver powder, as the function phase in slurry, plays the effect of conduction.To need due to back side main grid and metal electrode is welded together is connected into assembly, therefore, the solderability of silver layer, soldering resistance, become the important performance characteristic of back silver paste of solar cell with the adhesive force of silicon substrate and conductivity.Except these performance parameters, the cost of back silver paste of solar cell also drastically influence the production cost of solar cell.Therefore, prepare and a kind of there is excellent soldering resistance and solderability, strong adhesive force, high conductivity and the back silver paste of solar cell of low cost constitutes key technology main points in manufacture of solar cells.
The silver powder of open employing 0.5-1 micron and 1-3 micron two kinds of small particle diameter is had to prepare back silver used for solar batteries slurry in prior art, it forms silver-colored silicon alloy phase when being conducive to sintering, but the eutectic temperature of this silver-colored silicon alloy phase is at about 840 DEG C, cause sintering temperature need higher than this temperature, energy resource consumption be large.Also have collocation to use nano-silver powder and micro-silver powder to starch electric conductor as silver in prior art, but the minimum easy appearance of the nano-silver powder particle diameter wherein adopted is reunited, increase the dispersion difficulty of silver powder, increase the preparation difficulty of silver slurry, cost is also higher simultaneously.
Summary of the invention
The invention solves silver powder in the high and silver-colored slurry of sintering temperature that the silver of rear surface of solar cell in prior art slurry exists easily to reunite and cause preparing the technical problem that difficulty is large, cost is high.
The invention provides a kind of back silver paste of solar cell, containing the first silver powder, the second silver powder, glass dust and organic carrier in described back silver paste of solar cell; With the total weight of described back silver paste of solar cell for benchmark, wherein the content of the first silver powder is 20-25wt%, and the content of the second silver powder is 25-30wt%, and the content of glass dust is 1-10wt%, and the content of organic carrier is 30-55wt%; The particle diameter of described first silver powder is 0.1-0.5 μm, and the particle diameter of the second silver powder is 1-10 μm, and the softening point temperature of glass dust is 600-700 DEG C.
Further, the invention provides the preparation method of described back silver paste of solar cell, comprise and first glass dust is scattered in organic carrier, then the first silver powder and the second silver powder are added in batches, be ground to slurry fineness and be less than 15 μm, obtain described back silver paste of solar cell.
Present invention also offers a kind of preparation method of solar cell, comprise the following steps: first at silicon chip shady face successively printed back silver slurry and back field aluminum paste, at silicon chip phototropic face printing front side silver paste after oven dry, enter continuous tunnel furnace and dry and sinter, obtain described solar cell; Wherein, described back silver slurry is back silver paste of solar cell provided by the invention.
Finally, the invention provides a kind of solar cell, described solar cell is prepared by preparation method provided by the invention.
Back silver paste of solar cell provided by the invention, the first silver powder wherein adopted has good dispersive property relative to the nano-silver powder used in prior art, relative to the micro-silver powder used in prior art, there is higher specific surface energy, can finer and close and thicker silverskin be formed; The second silver powder adopted can improve its degree of supersaturation in glassy phase; Be the glass dust of 600-700 DEG C with the use of softening point temperature simultaneously, can thinner glassy layer be formed, thus reduce contact resistivity, also help silver-colored crystalline substance and be dispersed in glassy phase, form good ohmic contact with silicon substrate, improve the photoelectric conversion efficiency of solar cell.Rear surface of solar cell silver slurry provided by the invention simultaneously, its sintering temperature is low, and preparation method is simple, also has good welding performance, greatly can reduce the cost of manufacture of cell piece.
Embodiment
The invention provides a kind of back silver paste of solar cell, containing the first silver powder, the second silver powder, glass dust and organic carrier in described back silver paste of solar cell; With the total weight of described back silver paste of solar cell for benchmark, wherein the content of the first silver powder is 20-25wt%, and the content of the second silver powder is 25-30wt%, and the content of glass dust is 1-10wt%, and the content of organic carrier is 30-55wt%; The particle diameter of described first silver powder is 0.1-0.5 μm, and the particle diameter of the second silver powder is 1-10 μm, and the softening point temperature of glass dust is 600-700 DEG C.
As previously mentioned, also the electric conductor of silver powder as back silver paste of solar cell of open employing different-grain diameter is had in prior art, such as adopt two kinds of different-grain diameters but the micro-silver powder being the silver powder of small particle diameter or the nano-silver powder of minimum particle diameter and very big particle diameter is arranged in pairs or groups and used, there is the various technical problem being difficult to overcome.The present inventor is found by further research experiment, in the present invention, also the electric conductor that the silver powder of two kinds of different-grain diameters is starched as silver is adopted, it has the advantage mentioned in aforementioned prior art, simultaneously particle diameter is that first silver powder of 0.1-0.5 μm has larger specific surface energy, and silver slurry can be made to obtain the finer and close and thicker silverskin in surface at a relatively low sintering temperature; And the second silver powder that particle diameter is 1-10 μm has less specific surface energy, the meltage of silver in glass metal can be increased, and the silver powder adopting other different-grain diameters to coordinate all fails to reach this effect.
Particularly, the particle diameter of described first silver powder is 0.1-0.5 μm.Inventor finds, if the particle diameter of the first silver powder is less than 0.1 μm, silver powder is too little is difficult to dispersion; If particle diameter is greater than 0.5 μm, silver powder specific surface energy is less than normal, is difficult to form fine and close silverskin on surface.The particle diameter of described second silver powder is 1-10 μm, is preferably 1-6 μm.Inventor finds, if the particle diameter of the second silver powder is less than 1 μm, the meltage of silver powder can reduce greatly; If particle diameter is greater than 10 μm, the glassy layer formed after sintering is in uneven thickness, and the silver-colored crystal grain footpath that in glassy layer, recrystallization goes out is not of uniform size, skewness.
Particularly, particle diameter is selected to be first silver powder of 0.1-0.5 μm, it has good dispersive property relative to the nano-silver powder used in prior art, relative to the micro-silver powder used in prior art, there is higher specific surface energy, Argent grain can be caused under high temperature sintering motive force before dissolving just to sinter block silver into, decrease the meltage of silver in glassy phase, sinter in block silver process between Argent grain, hole between Argent grain shrinks until disappear, because the density ratio silver of glass dust is large, the sedimentation from space of glass metal in silver slurry forms glassy layer, thus form finer and close and thicker silverskin.And select particle diameter to be second silver powder of 1-10 μm, its specific surface energy is lower, is not easy sintering each other, adds the dissolving of silver in glassy phase, and the degree of supersaturation of silver in glassy phase is increased, and the brilliant quantity of the silver that in cooling procedure, recrystallization obtains is more.
The pattern of the first silver powder of the present invention and the second silver powder can be the composition of sheet, granular, the arbitrary shape such as colloidal, amorphous state, dendroid or different morphologies powder.Wherein the cost of dendritic silver powder is higher, is also difficult to preparation.Therefore, in the present invention, described first silver powder, the second silver powder are preferably sheet or granular silver powder.More preferably, in situation, described second silver powder adopts flake silver powder; This be because the specific area of flake silver powder is relatively large, stable, oxidizability and oxidation potential lower, resistance is relatively low, simultaneously, flake silver powder can provide larger buoyancy, slow down the deposition velocity of flake silver powder, increase the dissolution time of silver powder in glassy phase, the dissolving of silver in glassy phase can be increased.
Further, inventor also finds, the particle diameter of silver powder, after reaching technical requirement, can't realize low contact resistivity, realizes good ohmic contact, needs to mate the glass dust using specific softening point temperature simultaneously.Particularly, in the present invention, the glass dust that use softening point temperature is 600-700 DEG C makes it need to reach higher temperature just can make the softening flowing of glass dust, therefore in sintering process, the flowing time of glass metal is shorter, thinner glassy layer can be formed, be conducive to the quantum mechanical tunneling that silver occurs, thus obtain low contact resistivity.The glass metal of high softening-point has higher crystallization temperature simultaneously, glass metal can be made to solidify in higher temperature, prevent the silver-colored crystalline phase counterdiffusion of separating out in glass metal from assembling, the silver crystalline substance that also can prevent glass metal from separating out precipitates completely from glass metal, thus be conducive to forming silver-colored crystalline substance and be evenly distributed in glassy layer, not only change the conductivity of glass itself, but also increase the multistage tunnel effect of electric current conduction, form good ohmic contact.
Particularly, in the present invention, the softening point temperature of described glass dust is 600-700 DEG C, and it belongs to high softening-point glass dust.Inventor is found by contrast experiment, if adopt the softening point temperature of glass dust lower than 600 DEG C, the mobility of glass dust is comparatively large, and the glassy layer of formation is thicker, is unfavorable for conducting; If softening point is higher than 700 DEG C, glass metal fusing is more late, and the wettability of glass metal to silicon electrode is poor, causes adhesion strength lower.
As previously mentioned, the high softening-point glass dust that the present invention adopts is due to its higher setting temperature, and the silver crystalline substance that recrystallization can be made to go out is more tiny, quantity is more is evenly dispersed in glassy phase.As a kind of preferred implementation of the present invention, described glass dust is flint glass powder.Particularly, in subsequent electrode sintering process, when temperature is higher than glass softening point temperature, glass dust softens melting, due to larger than silver of the density of glass dust, glass will sink under silver electrode and contact with silicon electrode, lead oxide in glass can generate plumbous simple substance with pasc reaction, plumbous meeting form silver-plumbous eutectic with silver at 304 DEG C, in cooling procedure, silver starts phase-splitting with plumbous according to phasor, the Argent grain of recrystallization is distributed in silicon face, therefore plumbous in glass dust existence can increase the dissolving of silver, even if at a relatively low sintering temperature also can by more silver-colored meltage, (sintering schedule is the technical term of inorganic ceramic sintering art can also to realize lower sintering schedule, refer to a complete sintering process, it comprises intensification, the process of insulation and cooling).The back of the body silver electrode that sintering more than can be made to obtain has good welding performance, forms good ohmic contact with silicon electrode.
Inventor is found by further contrast experiment, and with the total weight of glass dust for benchmark, lead content optimal proportion is 30-65wt%.Particularly, if lead content is lower than 30wt% in glassy phase, lead reduces the hydrotropy of silver, and in glassy phase, the meltage of silver reduces; If lead content is higher than 65wt% in glassy phase, because the corrosivity of high pbo glass to silicon is extremely strong, easily burns p-n junction, cause battery performance to reduce.
Particularly, in the present invention, described glass dust can directly adopt containing plumbous various glass dust in this area, and the present invention is not particularly limited, such as, can select SiO
2, B
2o
3, ZnO, Bi
2o
3, V
2o
5, at least one in alkali metal compound and PbO be as the bulk composition of glass.As a kind of preferred implementation of the present invention, described glass dust is lead silicate glass powder or lead borosilicate glass powder.Described glass dust can be made by oneself, also can be commercially available.
Organic component of the present invention comprises binding agent, organic solvent, and with the total weight of described back silver paste of solar cell for benchmark, binder content is 10-15%, and solvent is 20-40%.Described binding agent can be selected from ethyl cellulose, celluloid, alkyd resins, (methyl) acrylic resin one or more.Described organic solvent can be selected from terpinol, butyl, ethylene glycol monobutyl ether, ethylene glycol phenyl ether, tributyl citrate, diethylene glycol monobutyl ether acetate, positive butyl ester, butyl carbitol, ten diester alcohol etc. one or more.Described organic carrier can be purchased, and also can make by oneself, such as, binding agent can be added in above-mentioned organic solvent, make it fully dissolve and stir, obtain described organic carrier at 50 ~ 70 DEG C.
Further, the invention provides the preparation method of described back silver paste of solar cell, comprise and first glass dust is scattered in organic carrier, then the first silver powder and the second silver powder are added in batches, be ground to slurry fineness and be less than 15 μm, obtain described back silver paste of solar cell.
Particularly, load weighted organic carrier in proportion first can be placed in the stainless cylinder of steel of high speed dispersor, while stirring, add described glass dust, stir evenly; Then add the first silver powder, the second silver powder in batches, every batch adds and first to stir evenly afterwards, then adds next batch; After all adding, stir evenly at a high speed; Repeatedly be ground to slurry fineness 15 μm with three-roll grinder again, described back silver paste of solar cell can be obtained.
Present invention also offers a kind of preparation method of solar cell, comprise the following steps: first at silicon chip shady face successively printed back silver slurry and back field aluminum paste, at silicon chip phototropic face printing front side silver paste after oven dry, enter continuous tunnel furnace and dry and sinter, obtain described solar cell; Wherein, described back silver slurry is back silver paste of solar cell provided by the invention.
In the present invention, described front side silver paste, back field aluminum paste material are the various conventional slurry that those skilled in the art commonly use, and the present invention is not particularly limited, and repeats no more herein.Described silicon chip can be monocrystalline silicon piece or polysilicon chip, and the present invention is not particularly limited.The printing process of various slurry is also conventionally known to one of skill in the art, such as, can be silk screen printing, but be not limited to this.
As previously mentioned, rear surface of solar cell silver slurry provided by the invention has lower sintering temperature, and particularly, the peak temperature of its sintering is 740-780 DEG C.Sintering time under peak temperature is 1-3 second.
Finally, the invention provides a kind of solar cell, described solar cell is prepared by preparation method provided by the invention.
Solar cell provided by the invention, its back silver electrode outward appearance is good, and the weld strength of electrode and photovoltaic welding belt is high, has lower contact resistance, effectively can improve photoelectric conversion efficiency while greatly reducing battery cost of manufacture.
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.Embodiment and raw material that comparative example adopts all are commercially available, and the present invention is not particularly limited.
Embodiment 1
(1) 10g celluloid is added in 37g tributyl citrate, and disperses to mix at 60 DEG C, form as clear as crystal organic carrier.In above-mentioned organic carrier, adding 6g lead silicate glass powder, (softening point temperature is 605 DEG C, lead content 35wt%), then add particle silver powder that 20.5g particle diameter is 460nm in batches, 26.5g particle diameter is the particle silver powder of 4 μm, grind 3 times with three-roll grinder after abundant mixing and be less than 15 μm to slurry fineness, obtain the back silver paste of solar cell of the present embodiment, be designated as S1.
(2) polysilicon chip specification is: 156 × 156mm, and thickness is 200 μm (before corrosion), and before printing, thickness is 180 μm.After by silicon wafer wool making, PN junction processed, plating silicon nitride anti-reflecting film, the back silver paste of solar cell S1 of first screen printing step (1), dry at remaining shady face part silk screen printing back field aluminum paste (the large standing grain in Taiwan science and technology 108C aluminium paste) after oven dry, then silk screen printing front side silver paste (Dupont company, 17F silver slurry), enters in chain band sintering furnace and sinters, sintering peak temperature is 780 DEG C, under peak temperature, sintering time is 2 seconds, obtains the solar cell of the present embodiment, is designated as S10.
Embodiment 2
(1) 14.2g ethyl cellulose is added in 33g terpinol, and disperses to mix at 60 DEG C, form as clear as crystal organic carrier.(softening point temperature is 685 DEG C to add 1.8g lead borosilicate glass powder to above-mentioned organic carrier, lead content 63wt%), then add particle silver powder that 24.6g particle diameter is 130nm in batches, 26.4g particle diameter is the flake silver powder of 8.51 μm, after grinding 3 times with three-roll grinder after abundant mixing, 15 μm are less than to slurry fineness, obtain the back silver paste of solar cell of the present embodiment, be designated as S2.
Polysilicon chip specification is: 156 × 156mm, and thickness is 200 μm (before corrosion), and before printing, thickness is 180 μm.After by silicon wafer wool making, PN junction processed, plating silicon nitride anti-reflecting film, the back silver paste of solar cell S2 of first screen printing step (1), dry at remaining shady face part silk screen printing back field aluminum paste (the large standing grain in Taiwan science and technology 108C aluminium paste) after oven dry, then silk screen printing front side silver paste (Dupont company, 17F silver slurry), enters in chain band sintering furnace and sinters, sintering peak temperature is 740 DEG C, under peak temperature, sintering time is 3 seconds, obtains the solar cell of the present embodiment, is designated as S20.
Embodiment 3
(1) 15g alkyd resins is added in 25g butyl, and disperses to mix at 70 DEG C, form as clear as crystal organic carrier.(softening point temperature is 650 DEG C to add 9g lead borosilicate glass powder to above-mentioned organic carrier, lead content 49wt%), then add flake silver powder that 22g particle diameter is 320nm in batches, 29g particle diameter is the particle silver powder of 1.12 μm, grind 3 times with three-roll grinder after abundant mixing and be less than 15 μm to slurry fineness, obtain the back silver paste of solar cell of the present embodiment, be designated as S3.
(2) polysilicon chip specification is: 156 × 156mm, and thickness is 200 μm (before corrosion), and before printing, thickness is 180 μm.After by silicon wafer wool making, PN junction processed, plating silicon nitride anti-reflecting film, the back silver paste of solar cell S3 of first screen printing step (1), dry at remaining shady face part silk screen printing back field aluminum paste (the large standing grain in Taiwan science and technology 108C aluminium paste) after oven dry, then silk screen printing front side silver paste (Dupont company, 17F silver slurry), enters in chain band sintering furnace and sinters, sintering peak temperature is 760 DEG C, under peak temperature, sintering time is 2 seconds, obtains the solar cell of the present embodiment, is designated as S30.
Embodiment 4
(1) 13g acrylic resin is added in the mixed solution of 8g terpinol, 10g butyl, 11g tributyl citrate, and disperses to mix at 70 DEG C, form as clear as crystal organic carrier.In above-mentioned organic carrier, adding 50g lead silicate glass powder, (softening point temperature is 630 DEG C, lead content 50wt%), then add flake silver powder that 24g particle diameter is 250nm in batches, 29g particle diameter is the flake silver powder of 2.5 μm, grind 3 times with three-roll grinder after abundant mixing and be less than 15 μm to slurry fineness, obtain the back silver paste of solar cell of the present embodiment, be designated as S4.
(2) polysilicon chip specification is: 156 × 156mm, and thickness is 200 μm (before corrosion), and before printing, thickness is 180 μm.After by silicon wafer wool making, PN junction processed, plating silicon nitride anti-reflecting film, the back silver paste of solar cell S4 of first screen printing step (1), dry at remaining shady face part silk screen printing back field aluminum paste (the large standing grain in Taiwan science and technology 108C aluminium paste) after oven dry, then silk screen printing front side silver paste (Dupont company, 17F silver slurry), enters in chain band sintering furnace and sinters, sintering peak temperature is 760 DEG C, under peak temperature, sintering time is 1 second, obtains the solar cell of the present embodiment, is designated as S40.
Embodiment 5
(1) 10g celluloid is added in 37g tributyl citrate, and disperses to mix at 60 DEG C, form as clear as crystal organic carrier.In above-mentioned organic carrier, adding 6g lead silicate glass powder, (softening point temperature is 605 DEG C, lead content 35%), then add particle silver powder that 20.5g particle diameter is 460nm in batches, 26.5g particle diameter is the flake silver powder of 4 μm, grind 3 times with three-roll grinder after abundant mixing and be less than 15 μm to slurry fineness, obtain the back silver paste of solar cell of the present embodiment, be designated as S5.
(2) polysilicon chip specification is: 156 × 156mm, and thickness is 200 μm (before corrosion), and before printing, thickness is 180 μm.After by silicon wafer wool making, PN junction processed, plating silicon nitride anti-reflecting film, the back silver paste of solar cell S5 of first screen printing step (1), dry at remaining shady face part silk screen printing back field aluminum paste (the large standing grain in Taiwan science and technology 108C aluminium paste) after oven dry, then silk screen printing front side silver paste (Dupont company, 17F silver slurry), enters in chain band sintering furnace and sinters, sintering peak temperature is 780 DEG C, under peak temperature, sintering time is 2 seconds, obtains the solar cell of the present embodiment, is designated as S50.
Comparative example 1
Adopt step in the same manner as in Example 1 to prepare back silver paste of solar cell DS1 in the present embodiment and solar battery sheet DS10, difference is:
In step (1), in organic carrier, adding 6g lead silicate glass powder, (softening point temperature is 605 DEG C, lead content 35wt%), then add particle silver powder that 20.5g particle diameter is 60nm in batches, 26.5g particle diameter is the particle silver powder of 4 μm, fully grind 3 times with three-roll grinder after mixing and be less than 15 μm to slurry fineness;
In step (2), adopt the S1 in back silver paste of solar cell DS1 alternate embodiment.
Comparative example 2
Adopt step in the same manner as in Example 1 to prepare back silver paste of solar cell DS2 in the present embodiment and solar battery sheet DS20, difference is:
In step (1), in organic carrier, adding 6g lead silicate glass powder, (softening point temperature is 605 DEG C, lead content 35wt%), then add particle silver powder that 20.5g particle diameter is 460nm in batches, 26.5g particle diameter is the particle silver powder of 13 μm, fully grind 3 times with three-roll grinder after mixing and be less than 15 μm to slurry fineness;
In step (2), adopt the S1 in back silver paste of solar cell DS2 alternate embodiment.
Comparative example 3
Adopt step in the same manner as in Example 1 to prepare back silver paste of solar cell DS3 in the present embodiment and solar battery sheet DS30, difference is:
In step (1), in organic carrier, adding 6g lead silicate glass powder, (softening point temperature is 605 DEG C, lead content 35wt%), then add particle silver powder that 20.5g particle diameter is 900nm in batches, 26.5g particle diameter is grind 3 times with three-roll grinder after particle silver powder, the fully mixing of 4 μm to be less than 15 μm to slurry fineness;
In step (2), adopt the S1 in back silver paste of solar cell DS3 alternate embodiment.
Comparative example 4
Adopt step in the same manner as in Example 1 to prepare back silver paste of solar cell DS4 in the present embodiment and solar battery sheet DS40, difference is:
In step (1), in organic carrier, adding 6g lead silicate glass powder, (softening point temperature is 605 DEG C, lead content 35wt%), then add particle silver powder that 20.5g particle diameter is 460nm in batches, 26.5g particle diameter is the particle silver powder of 0.7 μm, fully grind 3 times with three-roll grinder after mixing and be less than 15 μm to slurry fineness;
In step (2), adopt the S1 in back silver paste of solar cell DS4 alternate embodiment.
Performance test
Carry out following performance test to each solar battery sheet S10-S50 and DS10-DS40, test result is as shown in table 1.
Table 1
。
As can be seen from the test result of upper table 1, adopt the solar cell S10-S50 that back silver paste of solar cell provided by the invention prepares, its back silver electrode outward appearance is good, the weld strength of electrode and photovoltaic welding belt is high, there is lower contact resistance, effectively can improve photoelectric conversion efficiency while greatly reducing battery cost of manufacture, obviously be better than the sample DS10-DS40 of comparative example.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. a back silver paste of solar cell, is characterized in that, containing the first silver powder, the second silver powder, glass dust and organic carrier in described back silver paste of solar cell; With the total weight of described back silver paste of solar cell for benchmark, wherein the content of the first silver powder is 20-25wt%, and the content of the second silver powder is 25-30wt%, and the content of glass dust is 1-10wt%, and the content of organic carrier is 30-55wt%; The particle diameter of described first silver powder is 0.1-0.5 μm, and the particle diameter of the second silver powder is 1-10 μm, and the softening point temperature of glass dust is 600-700 DEG C.
2. back silver paste of solar cell according to claim 1, is characterized in that, described second silver powder is flake silver powder.
3. back silver paste of solar cell according to claim 1 and 2, is characterized in that, the particle diameter of described second silver powder is 1-6 μm.
4. back silver paste of solar cell according to claim 1, is characterized in that, described glass dust is flint glass powder, and the lead content in described glass dust is 30-65wt%.
5. the back silver paste of solar cell according to claim 1 or 4, is characterized in that, described glass dust is lead silicate glass powder or lead borosilicate glass powder.
6. back silver paste of solar cell according to claim 1, is characterized in that, containing binding agent and organic solvent in described organic carrier; With the quality of described back silver paste of solar cell for benchmark, wherein the content of binding agent is 10-15wt%, and solvent is 20-40wt%.
7. back silver paste of solar cell according to claim 6, it is characterized in that, described binding agent be selected from ethyl cellulose, celluloid, alkyd resins, acrylic resin one or more, described organic solvent be selected from terpinol, butyl, ethylene glycol monobutyl ether, ethylene glycol phenyl ether, tributyl citrate, diethylene glycol monobutyl ether acetate, positive butyl ester, butyl carbitol, ten diester alcohol etc. one or more.
8. the preparation method of back silver paste of solar cell according to claim 1, it is characterized in that, comprise and first glass dust is scattered in organic carrier, then the first silver powder and the second silver powder are added in batches, be ground to slurry fineness and be less than 15 μm, obtain described back silver paste of solar cell.
9. a preparation method for solar cell, comprises the following steps: first at silicon chip shady face successively printed back silver slurry and back field aluminum paste, at silicon chip phototropic face printing front side silver paste after oven dry, enters continuous tunnel furnace and dries and sinter, obtain described solar cell; It is characterized in that, described back silver slurry is the back silver paste of solar cell described in any one of claim 1-7.
10. preparation method according to claim 9, is characterized in that, the peak temperature of sintering is 740-780 DEG C.
11. 1 kinds of solar cells, is characterized in that, described solar cell is prepared by the preparation method described in claim 9 or 10.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN107871542A (en) * | 2016-09-27 | 2018-04-03 | 株式会社则武 | Silver paste and electronic component |
| CN107871542B (en) * | 2016-09-27 | 2021-09-07 | 株式会社则武 | Silver paste and electronic component |
| CN107658046A (en) * | 2017-09-25 | 2018-02-02 | 江苏时瑞电子科技有限公司 | A kind of high adhesion force conductive silver paste and preparation method thereof |
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| CN109524483A (en) * | 2018-11-26 | 2019-03-26 | 西安交通大学 | The high-frequency micro-vibration networking densification process of more partial size composite conducting ag paste electrodes |
| CN109524483B (en) * | 2018-11-26 | 2021-05-28 | 西安交通大学 | High-frequency micro-vibration networking compacting method for multi-particle-size composite conductive silver paste electrode |
| CN112037959A (en) * | 2020-09-01 | 2020-12-04 | 深圳纳弘熠岦光学科技有限公司 | Silver paste, silver paste preparation method and solar cell grid line |
| CN114530277A (en) * | 2022-03-23 | 2022-05-24 | 河北晶乐光电科技有限公司 | Back electrode silver paste composition, preparation method thereof and solar cell |
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