CN106356424B - The method of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor - Google Patents
The method of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor Download PDFInfo
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- CN106356424B CN106356424B CN201610834957.5A CN201610834957A CN106356424B CN 106356424 B CN106356424 B CN 106356424B CN 201610834957 A CN201610834957 A CN 201610834957A CN 106356424 B CN106356424 B CN 106356424B
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- 238000005476 soldering Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000004020 conductor Substances 0.000 title claims abstract description 11
- 230000001681 protective effect Effects 0.000 title claims abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims abstract description 86
- 238000005219 brazing Methods 0.000 claims abstract description 49
- 238000003466 welding Methods 0.000 claims abstract description 46
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 238000002604 ultrasonography Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000000945 filler Substances 0.000 claims abstract description 12
- 239000000155 melt Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000000523 sample Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 2
- 229910016334 Bi—In Inorganic materials 0.000 claims description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 claims description 2
- 229910020830 Sn-Bi Inorganic materials 0.000 claims description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 claims description 2
- 229910020994 Sn-Zn Inorganic materials 0.000 claims description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 claims description 2
- 229910018728 Sn—Bi Inorganic materials 0.000 claims description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 claims description 2
- 229910018956 Sn—In Inorganic materials 0.000 claims description 2
- 229910009069 Sn—Zn Inorganic materials 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 230000004907 flux Effects 0.000 abstract description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052742 iron Inorganic materials 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 230000000630 rising effect Effects 0.000 abstract description 2
- 239000010949 copper Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910007637 SnAg Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910007116 SnPb Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910009070 Sn—Zn—Ag Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 240000000971 garden vetch Species 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/06—Soldering, e.g. brazing, or unsoldering making use of vibrations, e.g. supersonic vibrations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses the method for a kind of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor, the methods are as follows: fills solder with unleaded Sn base solder welding wire, applies ultrasound after brazing filler metal melts, coats solder in solar battery Al back surface field；Brazing belt electrode is placed on the solder of precoating, is heated using soldering iron, brazing filler metal melts are made, forms connection；Or the brazing band for coating unleaded Sn base solder is placed in solar battery Al back surface field, position to be welded is heated；After brazing filler metal melts, apply ultrasound, completes welding.The present invention not only solves Si solar battery sheet Al back surface field electrode and cannot directly be brazed, Ag solder joint can only be printed to be brazed again, the problem of causing manufacturing cost rising and performance to decline, and it solves using brazing flux soldering Al back electrode and Cu contact conductor bring etching problem, while solving the problems, such as Si piece caused by ultrasonic wave metal weldering breakage rate is high.
Description
Technical field
The invention belongs to welding technology field, it is related to a kind of welding method of solar panel, more particularly to one kind is too
The method of positive energy battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor.
Background technique
Solar energy occupies an important position in energy field as a kind of clean renewable energy.Solar energy
Volt generation technology has also obtained mondial application and popularization, low manufacturing cost and the output of higher performance at
For the trend of solar panel development.
The output voltage and power of monolithic solar cell are very limited, it is therefore desirable to by multiple solar battery cells into
Row realizes certain power output in series and parallel.This just needs step by step to weld together the positive and negative anodes of solar battery.In silicon
The light-receiving surface of solar panel generally prints silver grating line, and the soldering of silver grating line is easier, and is made using Sn base solder and cooperation
Brazing flux can easier realize the connection of silver grating line.
For printed back electrode usually using Al slurry, good Ohmic contact can be formed with Si by being primarily due to Al.Simultaneously
Al back surface field can also play the role of it is following, 1) Si backboard surface formed P+ passivation layer, can reduce answering for minority carrier
Conjunction rate improves the open-circuit voltage of battery；2) Al back surface field layer can be used as back reflector, improve the short circuit current of solar battery；
3) electric current is exported into solder joint.But there is one layer of very form compact and stable oxidation film on the surface Al, and Sn solder is not cooperated to use
Low temperature brazing flux, therefore it is very difficult to be brazed Al back surface field.The technique generallyd use now is to print weldability and conduction in Si back surface field
Property good Ag electrode, recycle the welding of coating SnPb solder to be brazed.
Currently, the patent of invention of related solar battery welding is the hair for brazing filler metal alloy system and welding tooling mostly
It is bright:
Shanghai Communications University's Wu Xue common vetch etc. (preparation of photovoltaic welding belt and performance study [D], 2013.) has studied photovoltaic welding belt
The technique of surface coating Sn63Pb37 solder.But the Pb in SnPb solder is a kind of environmentally harmful element, is gradually decreased
With stop using solder containing Pb to have become a kind of trend.
CN105499830A discloses a kind of photovoltaic welding belt Sn-Zn-Cu-Al-Bi system without lead multielement alloy.
CN103801853A disclose it is a kind of containing antimony, silver, copper, bismuth, gallium, phosphorus unleaded Sn base photovoltaic solder.Above-mentioned two patent disclosure
Solder primarily directed to the welding of Ag electrode, and do not disclose matched welding method.
CN101110458A discloses a kind of auto-ultrasonic welding for non-crystal silicon solar cell electrode welding and sets
It is standby to weld Cu welding and Ag electrode.CN103503163A discloses the ultrasonic welding method of a kind of Al welding and Ag electrode.
This kind of patent uses the principle welding lead and electrode of ultrasonic wave metal weldering, but since ultrasonic tool head needs to apply to Si piece
Add certain pressure, and vibrated, will cause cell piece breakage rate in welding process and improve.
As a kind of noble metal, the use of Ag rises manufacturing cost；Secondly Ag and Si cannot form back surface field, lead to minority
The recombination rate of carrier improves, open-circuit voltage decline.Therefore it is directly brazed Al back surface field electrode, it can be to avoid the use of Ag, not only
It can reduce cost, and the performance of solar battery can be improved.
CN104952508A discloses a kind of method that Al back electrode is directly brazed using reaction flux, used brazing flux
In using heavy metal chloride as reactant, NaF and/or KF are as reaction promoter, NH4Cl and/or NH4Br as wetting aid,
But this brazing flux has the following problems: 1) this brazing flux is corrosivity brazing flux, and brazing flux residual butt joint has strong corrosivity；
2) toxic and harmful gas and smog can be generated during striping；3) brazing flux fusing point is higher, can only be with unification small part Sn base solder
It uses.
Summary of the invention
The object of the present invention is to provide a kind of solar battery Si piece Al back electrodes and the environmentally protective soldering of Cu contact conductor
Method apply ultrasound in liquid solder using unleaded Sn base solder, be directly brazed Si solar battery sheet Al back surface field electrode
With Cu contact conductor, not only solving Si solar battery sheet Al back surface field electrode cannot be directly brazed, and can only print Ag solder joint again
The problem of being brazed, manufacturing cost rising and performance caused to decline, and solve using brazing flux soldering Al back electrode and Cu electrode
Lead bring etching problem, at the same solve the problems, such as ultrasonic wave metal weldering caused by Si piece breakage rate is high.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of method of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor, including following two
Technical solution:
Technical solution one, when being brazed using unleaded Sn base solder welding wire, carry out as steps described below:
Step 1: filling solder with unleaded Sn base solder welding wire, resistance, induction or infrared heating to soldering temperature are utilized
Degree, control heating temperature are 160~300 DEG C.
Step 2: protruding into Ultrasonic probe in liquid solder after brazing filler metal melts, apply ultrasound, in solar battery
Al back surface field coats solder, and controlling ultrasonic application time is 0.1~20s, and frequency is 20~100KHz, and amplitude is 1~25 μm.
Step 3: brazing belt electrode is placed on the solder of precoating, heated using soldering iron, make brazing filler metal melts, formed
Connection.
Technical solution two, when using coating solder brazing band be brazed when, carry out as steps described below:
Step 1: the brazing band for coating unleaded Sn base solder is placed in solar battery Al back surface field, to position to be welded
It is heated, heating temperature is 160~300 DEG C.
Step 2: applying ultrasound using the Ultrasonic probe adapted to welding shape, when control is ultrasonic after brazing filler metal melts
Between be 0.1~20s, frequency be 20~100KHz, amplitude be 1~25 μm.
Step 3: cooling down in air, welding is completed.
In the present invention, solar battery is monocrystalline silicon, amorphous silicon or polycrystalline silicon solar panel.
In the present invention, during the preparation process, in front, printing Ag slurry forms front electrode to solar panel, overleaf
Silk-screen printing Al slurry forms back surface field, then so that slurry and silicon wafer is formed good Ohmic contact by sintering.
In the present invention, the unleaded Sn base solder used includes pure Sn, Sn-In, Sn-Bi, Sn-Bi-In, Sn-Zn, Sn-Bi-
Zn, Sn-Ag, Sn-Zn-Ag, Sn-Cu, Sn-Ag-Cu and other low-temperature brazing filler metals for being not limited to mentioned kind.
In the present invention, the diameter of unleaded Sn base solder welding wire is 0.5~2mm.
In the present invention, unleaded Sn base solder is coated in brazing belt surface, and coating carries out as steps described below: will be unleaded
Sn base solder is placed in solder bath, and brazing band is continued through the solder of fusing with constant speed, completes copper by heating fusing
The coating of welding brazing filler metal on surface；The width of the brazing band coats unleaded Sn base pricker for 0.5~2mm with a thickness of 0.1~0.5mm
Material with a thickness of 0.05~0.2mm.
In the present invention, welding inner core is not limited to Cu, is also possible to other metals such as Al, Ag.
In the present invention, ultrasound is applied using ultrasonic soldering iron, and ultrasound is applied in liquid solder, does not apply pressure to Si piece,
To reduce breakage rate of the Si piece in welding.
The present invention is not necessarily to apply sound field in liquid solder without using brazing flux in Si back printing Ag solder joint, uses
The welding of unleaded Sn base solder welding wire or the unleaded Sn base solder of coating fills solder, directly soldering Al back surface field, forms back electrode
Connection.Compared with the prior art, the present invention has the advantages that
1, the present invention uses environmentally protective unleaded Sn base solder, since Pb element is environmentally harmful element,
Forbidden using in electronic product by European Union, so the use of lead-free brazing being inexorable trend in solar battery welding.
2, directly soldering Al back surface field electrode can reduce the cost of solar battery manufacture to avoid the use of Ag.
3, being directly brazed Al back surface field electrode can be improved the photovoltaic property of solar battery sheet.
4, the auxiliary of ultrasonic sound field avoids the use of corrosivity brazing flux.
5, ultrasound is applied directly in liquid solder, does not apply pressure to Si piece, solves conventional ultrasound metal welding and cause
Welding process in Si piece the problem of breakage rate is high.
6, during welding Al back surface field, brazing flux is not used, to avoid toxic in corrosivity brazing flux residual and welding process
The generation of harmful vapors.
Detailed description of the invention
Fig. 1 is solder status diagram, a- welding wire, b- welding；
Fig. 2 is the schematic diagram that copper strips coats solder；
Fig. 3 is to coat schematic diagram using ultrasound when solder wire；
Fig. 4 is that welding and coating solder layer weld schematic diagram；
Fig. 5 is to use the direct ultrasonic brazing Al back surface field electrode interface pattern of pure Sn solder；
Fig. 6 is to use the direct ultrasonic brazing Al back surface field electrode interface pattern of SnAg solder；
Fig. 7 is the solar battery sheet macro morphology of directly soldering Al back surface field electrode and the preparation of Cu electrode.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawing, and however, it is not limited to this, all to this
Inventive technique scheme is modified or replaced equivalently, and without departing from the spirit and scope of the technical solution of the present invention, should all be covered
Within the protection scope of the present invention.
Specific embodiment 1: using pure Sn solder in present embodiment, solder is wire-shaped, and diameter 1mm is used
Solar battery be polysilicon solar cell, with a thickness of 180 μm, Al back surface field is with a thickness of 30 μm.
In present embodiment, the side of solar battery Al back surface field electrode and Cu contact conductor is directly brazed using pure Sn solder
Method carries out as steps described below:
Step 1: being heated to brazing temperature using ultrasonic soldering iron, heating temperature is 260 DEG C, fills solder, pricker with solder wire
The status diagram of material is as shown in Figure 1
Step 2: Ultrasonic probe is protruded into liquid solder, apply the ultrasound of 1s, ultrasonic frequency is 60KHz, amplitude
Range is 1 μm, removes Al surface film oxide and solder is made sufficiently to soak and sprawl, soldering schematic diagram is as shown in Figure 3.In order to reduce
Joint stress level coats discontinuous two solders in back surface field.
Step 3: brazing belt electrode is placed on the solder of precoating, heated using soldering iron, make brazing filler metal melts, formed
Connection, soldering schematic diagram are as shown in Figure 4.
Interface schematic diagram is as shown in Figure 5.
Specific embodiment 2: using SnAgCu solder in present embodiment, solder is wire-shaped, diameter 0.8mm,
Specific ingredient is Sn-3.0Ag-0.5Cu (wt.%).
In present embodiment, the method for solar battery Al back surface field and Cu contact conductor is directly brazed using SnAgCu solder
It carries out as steps described below:
Step 1: being heated to brazing temperature using ultrasonic soldering iron, heating temperature is 240 DEG C, fills solder, pricker with solder wire
The status diagram of material is as shown in Figure 1.
Step 2: Ultrasonic probe is protruded into liquid solder, apply the ultrasound of 3s, ultrasonic frequency is 20KHz, amplitude
Range is 3 μm, removes Al surface film oxide and solder is made sufficiently to soak and sprawl, soldering schematic diagram is as shown in Figure 3.In order to reduce
Joint stress level coats discontinuous two solders in back surface field.
Step 3: brazing electrode band is placed on the solder of precoating, heated using soldering iron, make brazing filler metal melts, formed
Connection, soldering schematic diagram are as shown in Figure 4.
Specific embodiment 3: using the brazing band of coating SnBi solder in present embodiment.
In present embodiment, the side of solar battery Al back surface field electrode is directly brazed using the brazing band of coating SnBi solder
Method carries out as steps described below:
Step 1: Sn-58Bi (wt.%) solder is placed in solder bath, copper strips is continued through fusing by heating fusing
Solder, complete copper strip surface solder coating.Welding width is 2mm, copper strips with a thickness of 0.15mm, coat solder with a thickness of
0.05mm.The status diagram of solder is as shown in Figure 1, the schematic diagram of brazing belt surface coating solder is as shown in Figure 2.
Step 2: two weldings are placed in Al back surface field, infrared heating, heating temperature 170 are carried out to position to be welded
℃。
Step 3: applying ultrasound using the Ultrasonic probe adapted to welding shape, ultrasonic application time is 15s, ultrasound
Frequency be 80KHz, amplitude range be 5 μm.
Step 4: cooling down in air, welding is completed.
Specific embodiment 4: using the brazing band of coating SnAg solder in present embodiment.
In present embodiment, the side of solar battery Al back surface field electrode is directly brazed using the brazing band of coating SnAg solder
Method carries out as steps described below:
Step 1: Sn-3.0Ag (wt.%) solder is placed in solder bath, heating fusing is continued through copper strips molten
The solder of change completes the coating of copper strip surface solder.Welding width is 1.5mm, and copper strips coats the thickness of solder with a thickness of 0.2mm
Degree is 0.1mm.The status diagram of solder is as shown in Figure 1, the schematic diagram of brazing belt surface coating solder is as shown in Figure 2.
Step 2: two weldings are placed in Al back surface field, induction heating, heating temperature 250 are carried out to position to be welded
℃。
Step 3: applying ultrasound using the Ultrasonic probe adapted to welding shape, ultrasonic application time is 5s, ultrasonic
Frequency is 40KHz, and amplitude range is 6 μm.
Step 4: cooling down in air, welding is completed.
Interface schematic diagram is as shown in fig. 6, the macro morphology of solar panel is as shown in Figure 7.
The open-circuit voltage for the solar battery sheet that embodiment of above obtains is as shown in table 1.
Table 1
Claims (1)
1. a kind of method of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor, it is characterised in that described
Method and step is as follows:
Step 1: the brazing band for coating unleaded Sn base solder is placed in solar battery Al back surface field, position to be welded is carried out
Heating, the heating temperature are 160~300 DEG C；
Step 2: applying ultrasound after brazing filler metal melts, control ultrasonic time is 0.1~20s, and frequency is 20~100KHz, amplitude
It is 1~25 μm；
Step 3: cooling down in air, welding is completed；
The width of the brazing band is 0.5~2mm, with a thickness of 0.1~0.5mm, coat unleaded Sn base solder with a thickness of 0.05
~0.2mm；
Ultrasound is applied using the Ultrasonic probe adapted to welding shape；
The unleaded Sn base solder is pure Sn, Sn-In, Sn-Bi, Sn-Bi-In, Sn-Zn, Sn-Bi-Zn, Sn-Ag, Sn-Zn-
Ag, Sn-Cu or Sn-Ag-Cu；
The solar battery is monocrystalline silicon, amorphous silicon or polycrystalline silicon solar panel.
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| CN201610834957.5A CN106356424B (en) | 2016-09-20 | 2016-09-20 | The method of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor |
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| CN109175567A (en) * | 2018-11-01 | 2019-01-11 | 中国电子科技集团公司第三十八研究所 | A kind of method for welding of micro-strip plate large area ground connection |
| KR102422569B1 (en) * | 2019-12-27 | 2022-07-20 | 주식회사 아모그린텍 | Ribbon for brazing and manufacturing method thereof |
| CN114473284A (en) * | 2022-02-07 | 2022-05-13 | 郑州机械研究所有限公司 | Brazing flux filling device |
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| CN101375412A (en) * | 2006-01-31 | 2009-02-25 | 昭和砚壳石油株式会社 | In solder covered copper foil ribbon conductor wire and its connection method |
| CN102248243A (en) * | 2010-05-05 | 2011-11-23 | 肖特太阳能股份公司 | Method and device for introducing solder onto a workpiece |
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