CN106356424A - Environment-friendly brazing method for Al back electrode and Cu electrode leads of Si wafer of solar cell - Google Patents
Environment-friendly brazing method for Al back electrode and Cu electrode leads of Si wafer of solar cell Download PDFInfo
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- CN106356424A CN106356424A CN201610834957.5A CN201610834957A CN106356424A CN 106356424 A CN106356424 A CN 106356424A CN 201610834957 A CN201610834957 A CN 201610834957A CN 106356424 A CN106356424 A CN 106356424A
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- solder
- solaode
- brazing
- piece
- back electrode
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- 238000005219 brazing Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 34
- 229910000679 solder Inorganic materials 0.000 claims abstract description 97
- 238000003466 welding Methods 0.000 claims abstract description 46
- 238000005476 soldering Methods 0.000 claims abstract description 39
- 239000011248 coating agent Substances 0.000 claims abstract description 19
- 238000000576 coating method Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000000155 melt Substances 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims description 17
- 230000007613 environmental effect Effects 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000945 filler Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 8
- 239000000523 sample Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 230000004907 flux Effects 0.000 abstract description 15
- 239000010949 copper Substances 0.000 abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052802 copper Inorganic materials 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000004021 metal welding Methods 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- -1 cu or al Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 240000000971 garden vetch Species 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/06—Soldering, e.g. brazing, or unsoldering making use of vibrations, e.g. supersonic vibrations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses an environment-friendly brazing method for the Al back electrode and Cu electrode leads of the Si wafer of a solar cell. The method includes: using lead-free Sn-based solder wires to fill solder, applying ultrasonic after the solder melts, and coating the Al back surface field of the solar cell with the solder; placing a copper solder strip on the pre-coated solder, and heating with soldering iron to melt the solder so as to form connection; or placing the copper solder strip coated with the lead-free Sn-based solder on the Al back surface field of the solar cell, and heating a to-be-welded part; applying ultrasonic after the solder melts to complete welding. The environment-friendly brazing method has the advantages that the problems that the Al back surface field electrode of the Si solar cell wafer cannot be brazed directly, brazing can only be performed after Ag welding spots are printed, and manufacturing cost increasing and performance lowering are caused are solved, the corrosion problem caused by the fact that the Al back electrode and Cu electrode leads are brazed by using brazing flux is solved, and the problem of high Si wafer damage rate caused by ultrasonic metal welding is solved.
Description
Technical field
The invention belongs to welding technology field, it is related to a kind of welding method of solar panel, more particularly, to one kind too
Sun energy battery si piece al back electrode and the method for cu contact conductor environmental protection soldering.
Background technology
Solar energy, as a kind of regenerative resource of cleaning, occupies an important position in energy field.Solar energy
Volt generation technology has also obtained mondial application and has promoted, and low manufacturing cost has become with the output of higher performance
Trend for solar panel development.
The output voltage of monolithic solar cell and power very limited it is therefore desirable to multiple solar battery cells are entered
Row connection in series-parallel is realizing certain power output.This is accomplished by welding together the both positive and negative polarity of solaode step by step.In silicon
The sensitive surface of solar panel typically prints silver grating line, and the soldering of silver grating line is easier, and is made using sn base solder and cooperation
The connection of silver grating line can easier be realized by brazing flux.
Printed back electrode is usually used al slurry, is primarily due to al and can form good Ohmic contact with si.Simultaneously
Al back surface field can also play following effect, and 1) form p+ passivation layer on si backboard surface, answering of minority carrier can be reduced
Conjunction rate, improves the open-circuit voltage of battery；2) al back surface field layer as back reflector, can improve the short circuit current of solaode；
3) electric current is exported to solder joint.But there is one layer of very form compact and stable oxide-film on al surface, sn solder is not coordinated to use
Low temperature brazing flux, therefore soldering al back surface field are very difficult.Now commonly used technique is to print weldability and conduction in si back surface field
Property good ag electrode, recycle the welding of coating snpb solder to carry out soldering.
At present, the patent of invention of relevant solaode welding is sending out for brazing filler metal alloy system and welding tooling mostly
Bright:
Shanghai Communications University's Wu Xue common vetch etc. (preparation of photovoltaic welding belt and performance study [d], 2013.) have studied photovoltaic welding belt
The technique of surface-coated sn63pb37 solder.But the pb in snpb solder is a kind of environmentally harmful element, gradually decreases
Have become as a kind of trend with stopping using solder containing pb.
Cn105499830a discloses a kind of photovoltaic welding belt sn-zn-cu-al-bi system no lead multielement alloy.
Cn103801853a disclose a kind of containing antimony, silver, copper, bismuth, gallium, phosphorus unleaded sn base photovoltaic solder.Above-mentioned two patent is open
Solder be primarily directed to the welding of ag electrode, and supporting welding method is disclosed.
Cn101110458a discloses a kind of welding of the auto-ultrasonic for non-crystal silicon solar cell electrode welding and sets
Standby welding cu welding and ag electrode.Cn103503163a discloses the ultrasonic welding method of a kind of al welding and ag electrode.
This kind of patent adopts principle welding lead and the electrode of ultrasonic wave metal weldering, but because ultrasonic tool head needs to apply to si piece
Plus certain pressure, and vibrated, cell piece breakage rate in welding process can be caused to improve.
As a kind of noble metal, the use of ag makes manufacturing cost rise；Secondly ag and si can not form back surface field, leads to minority
The recombination rate of carrier improves, and open-circuit voltage declines.Therefore direct soldering al back surface field electrode, can avoid the use of ag, not only
Can reduces cost, and the performance of solaode can be improved.
The method that cn104952508a discloses a kind of use reaction flux direct soldering al back electrode, the brazing flux being used
In using heavy metal chloride as reactant, naf and/or kf is as reaction promoter, nh4Cl and/or nh4Br as wetting aid,
But this brazing flux is there is problems in that 1) this brazing flux is corrosivity brazing flux, the residual butt joint of its brazing flux has strong corrosivity；
2) toxic and harmful and smog can be produced during striping；3) brazing flux fusing point is higher, can only coordinate a small part sn base solder
Use.
Content of the invention
It is an object of the invention to provide a kind of solaode si piece al back electrode and cu contact conductor environmental protection soldering
Method, using unleaded sn base solder, apply ultrasonic in liquid solder, direct soldering si solar battery sheet al back surface field electrode
With cu contact conductor, not only solve si solar battery sheet al back surface field electrode can not directly soldering, ag solder joint can only be printed again
Soldering, leads to manufacturing cost rising and the problem of hydraulic performance decline, and solves using brazing flux soldering al back electrode and cu electrode
The etching problem that lead brings, solves the problems, such as that the si piece breakage rate that ultrasonic wave metal weldering causes is high simultaneously.
The purpose of the present invention is achieved through the following technical solutions:
A kind of solaode si piece al back electrode and the method for cu contact conductor environmental protection soldering, including following two
Technical scheme:
Technical scheme one, when carrying out soldering using unleaded sn base solder welding wire, carry out as steps described below:
Step one, with unleaded sn base solder welding wire fill solder, using resistance, sensing or Infrared Heating to soldering temperature
Degree, controls heating-up temperature to be 160～300 DEG C.
Step 2, after brazing filler metal melts, Ultrasonic probe is stretched in liquid solder, apply ultrasonic, in solaode
Al back surface field coats solder, and the ultrasonic application time of control is 0.1～20s, and frequency is 20～100khz, and amplitude is 1～25 μm.
Step 3, brazing belt electrode is placed on the solder of precoating, using flatiron heating, makes brazing filler metal melts, formed
Connect.
Technical scheme two, when using coating solder brazing band carry out soldering when, carry out as steps described below:
Step one, by coat unleaded sn base solder brazing band be positioned in solaode al back surface field, to position to be welded
Heated, heating-up temperature is 160～300 DEG C.
Step 2, after brazing filler metal melts, using and welding shape adapt to Ultrasonic probe apply ultrasonic, control ultrasonic when
Between be 0.1～20s, frequency be 20～100khz, amplitude be 1～25 μm.
Step 3, cool down in atmosphere, complete to weld.
In the present invention, solaode is monocrystal silicon, non-crystalline silicon or polysilicon solar cell plate.
In the present invention, in preparation process, in front, printing ag slurry forms front electrode to solar panel, overleaf
Silk screen printing al slurry forms back surface field, and then passing through sintering makes slurry and silicon chip form good Ohmic contact.
In the present invention, the unleaded sn base solder of use includes pure sn, sn-in, sn-bi, sn-bi-in, sn-zn, sn-bi-
Zn, sn-ag, sn-zn-ag, sn-cu, sn-ag-cu and other low-temperature brazing filler metals being not limited to mentioned kind.
In the present invention, a diameter of 0.5～2mm of unleaded sn base solder welding wire.
In the present invention, unleaded sn base solder is coated in brazing belt surface, and coating is carried out as steps described below: will be unleaded
Sn base solder is placed in solder bath, heating fusing, brazing band is continued through the solder of fusing with constant speed, completes copper
The coating of welding brazing filler metal on surface；The width of described brazing band is 0.5～2mm, and thickness is 0.1～0.5mm, coats unleaded sn base pricker
The thickness of material is 0.05～0.2mm.
In the present invention, welding inner core is not limited to other metals such as cu or al, ag.
In the present invention, ultrasonic using ultrasonic flatiron apply, ultrasonic be applied in liquid solder, not to si piece apply pressure,
To reduce breakage rate in welding for the si piece.
The present invention need not print ag solder joint in si back, without using brazing flux, apply sound field in liquid solder, use
Unleaded sn base solder welding wire or the welding filling solder coating unleaded sn base solder, direct soldering al back surface field, form back electrode
Connection.Compared to prior art, it is an advantage of the current invention that:
1st, the present invention uses the unleaded sn base solder of environmental protection, because pb element is environmentally harmful element,
Forbidden using in electronic product by European Union, so the use of lead-free brazing being inexorable trend in solaode welding.
2nd, direct soldering al back surface field electrode can avoid the use of ag, reduces the cost that solaode manufactures.
3rd, direct soldering al back surface field electrode can improve the photovoltaic property of solar battery sheet.
4th, the auxiliary of ultrasonic sound field avoids the use of corrosivity brazing flux.
5th, ultrasonic be applied directly in liquid solder, not to si piece apply pressure, solve conventional ultrasound metal welding and cause
Welding process in the high problem of si piece breakage rate.
6th, during welding al back surface field, do not use brazing flux, poisonous in corrosivity brazing flux residual and welding process to avoid
The generation of harmful vapors.
Brief description
Fig. 1 is solder view, a- welding wire, b- welding；
Fig. 2 coats the schematic diagram of solder for copper strips；
Fig. 3 is using coating schematic diagram ultrasonic during solder tinsel；
Fig. 4 is welding and coating solder layer welding schematic diagram；
Fig. 5 is using pure sn solder direct ultrasonic brazing al back surface field electrode interface pattern；
Fig. 6 is using snag solder direct ultrasonic brazing al back surface field electrode interface pattern；
Fig. 7 is the solar battery sheet macro morphology of direct soldering al back surface field electrode and the preparation of cu electrode.
Specific embodiment
Below in conjunction with the accompanying drawings technical scheme is further described, but is not limited thereto, every to this
Inventive technique scheme is modified or equivalent, without deviating from the spirit and scope of technical solution of the present invention, all should cover
In protection scope of the present invention.
Specific embodiment one: using pure sn solder in present embodiment, solder is wire-shaped, and a diameter of 1mm uses
Solaode be polysilicon solar cell, thickness be 180 μm, al back surface field thickness be 30 μm.
In present embodiment, using the side of pure sn solder direct soldering solaode al back surface field electrode and cu contact conductor
Method is carried out as steps described below:
Step one, it is heated to brazing temperature using ultrasonic flatiron, heating-up temperature is 260 DEG C, fills solder, pricker with solder wire
The view of material is as shown in Figure 1
Step 2, Ultrasonic probe is stretched in liquid solder, apply the ultrasonic of 1s, ultrasonic frequency is 60khz, amplitude
Scope is 1 μm, removes al surface film oxide and makes the abundant moistening of solder and sprawl, soldering schematic diagram is as shown in Figure 3.In order to reduce
Joint stress level, coats discontinuous two solders in back surface field.
Step 3, brazing belt electrode is placed on the solder of precoating, using flatiron heating, makes brazing filler metal melts, formed
Connect, soldering schematic diagram is as shown in Figure 4.
Interface schematic diagram is as shown in Figure 5.
Specific embodiment two: using snagcu solder in present embodiment, solder is wire-shaped, a diameter of 0.8mm,
Concrete composition is sn-3.0ag-0.5cu (wt.%).
In present embodiment, using the method for snagcu solder direct soldering solaode al back surface field and cu contact conductor
Carry out as steps described below:
Step one, it is heated to brazing temperature using ultrasonic flatiron, heating-up temperature is 240 DEG C, fills solder, pricker with solder wire
The view of material is as shown in Figure 1.
Step 2, Ultrasonic probe is stretched in liquid solder, apply the ultrasonic of 3s, ultrasonic frequency is 20khz, amplitude
Scope is 3 μm, removes al surface film oxide and makes the abundant moistening of solder and sprawl, soldering schematic diagram is as shown in Figure 3.In order to reduce
Joint stress level, coats discontinuous two solders in back surface field.
Step 3, brazing electrode band is placed on the solder of precoating, using flatiron heating, makes brazing filler metal melts, formed
Connect, soldering schematic diagram is as shown in Figure 4.
Specific embodiment three: using the brazing band of coating snbi solder in present embodiment.
In present embodiment, using the side of the brazing band direct soldering solaode al back surface field electrode of coating snbi solder
Method is carried out as steps described below:
Step one, sn-58bi (wt.%) solder is placed in solder bath, heating fusing, copper strips is continued through fusing
Solder, complete the coating of copper strip surface solder.Welding width is 2mm, and copper strips thickness is 0.15mm, and the thickness of coating solder is
0.05mm.The view of solder is as shown in figure 1, the schematic diagram of brazing belt surface coating solder is as shown in Figure 2.
Step 2, two weldings are positioned in al back surface field, Infrared Heating is carried out to position to be welded, heating-up temperature is 170
℃.
The Ultrasonic probe applying that step 3, employing are adapted to welding shape is ultrasonic, and ultrasonic application time is 15s, ultrasonic
Frequency be 80khz, amplitude range be 5 μm.
Step 4, cool down in atmosphere, complete to weld.
Specific embodiment four: using the brazing band of coating snag solder in present embodiment.
In present embodiment, using the side of the brazing band direct soldering solaode al back surface field electrode of coating snag solder
Method is carried out as steps described below:
Step one, sn-3.0ag (wt.%) solder is placed in solder bath, heating fusing, copper strips is continued through molten
The solder changed, completes the coating of copper strip surface solder.Welding width is 1.5mm, and copper strips thickness is 0.2mm, the thickness of coating solder
Spend for 0.1mm.The view of solder is as shown in figure 1, the schematic diagram of brazing belt surface coating solder is as shown in Figure 2.
Step 2, two weldings are positioned in al back surface field, sensing heating is carried out to position to be welded, heating-up temperature is 250
℃.
The Ultrasonic probe applying that step 3, employing are adapted to welding shape is ultrasonic, and ultrasonic application time is 5s, ultrasonic
Frequency is 40khz, and amplitude range is 6 μm.
Step 4, cool down in atmosphere, complete to weld.
Interface schematic diagram is as shown in fig. 6, the macro morphology of solar panel is as shown in Figure 7.
The open-circuit voltage of the solar battery sheet that embodiment of above obtains is as shown in table 1.
Table 1
Claims (10)
1. a kind of method of solaode si piece al back electrode and cu contact conductor environmental protection soldering is it is characterised in that described
Method and step is as follows:
Step one, with unleaded sn base solder welding wire fill solder, be heated to brazing temperature；
Step 2, after brazing filler metal melts, Ultrasonic probe is stretched into apply in liquid solder ultrasonic, in solaode al back surface field
Coating solder, control ultrasonic time is 0.1～20s, and frequency is 20～100khz, and amplitude is 1～25 μm；
Step 3, brazing belt electrode is placed on the solder of precoating, using flatiron heating, makes brazing filler metal melts, formed and connect.
2. the side of solaode si piece al back electrode according to claim 1 and cu contact conductor environmental protection soldering
Method is it is characterised in that described brazing temperature is 160～300 DEG C.
3. the side of solaode si piece al back electrode according to claim 1 and cu contact conductor environmental protection soldering
Method is it is characterised in that described unleaded sn base solder is pure sn, sn-in, sn-bi, sn-bi-in, sn-zn, sn-bi-zn, sn-
Ag, sn-zn-ag, sn-cu or sn-ag-cu.
4. the side of solaode si piece al back electrode according to claim 1 and cu contact conductor environmental protection soldering
Method is it is characterised in that a diameter of 0.5～2mm of described unleaded sn base solder welding wire.
5. the side of solaode si piece al back electrode according to claim 1 and cu contact conductor environmental protection soldering
Method is it is characterised in that described solaode is monocrystal silicon, non-crystalline silicon or polysilicon solar cell plate.
6. a kind of method of solaode si piece al back electrode and cu contact conductor environmental protection soldering is it is characterised in that described
Method and step is as follows:
Step one, by coat unleaded sn base solder brazing band be positioned in solaode al back surface field, position to be welded is carried out
Heating；
Step 2, after brazing filler metal melts, apply ultrasonic, controls ultrasonic time be 0.1～20s, frequency be 20～100khz, amplitude
For 1～25 μm；
Step 3, cool down in atmosphere, complete to weld.
7. the side of solaode si piece al back electrode according to claim 6 and cu contact conductor environmental protection soldering
Method is it is characterised in that described heating-up temperature is 160～300 DEG C.
8. the side of solaode si piece al back electrode according to claim 6 and cu contact conductor environmental protection soldering
Method is it is characterised in that described unleaded sn base solder is pure sn, sn-in, sn-bi, sn-bi-in, sn-zn, sn-bi-zn, sn-
Ag, sn-zn-ag, sn-cu or sn-ag-cu.
9. the side of solaode si piece al back electrode according to claim 6 and cu contact conductor environmental protection soldering
It is characterised in that the width of described brazing band is 0.5～2mm, thickness is 0.1～0.5mm to method, coats the thickness of unleaded sn base solder
Spend for 0.05～0.2mm.
10. the side of solaode si piece al back electrode according to claim 6 and cu contact conductor environmental protection soldering
Method is it is characterised in that described solaode is monocrystal silicon, non-crystalline silicon or polysilicon solar cell plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610834957.5A CN106356424B (en) | 2016-09-20 | 2016-09-20 | The method of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610834957.5A CN106356424B (en) | 2016-09-20 | 2016-09-20 | The method of solar battery Si piece Al back electrode and the environmentally protective soldering of Cu contact conductor |
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| CN106356424B CN106356424B (en) | 2019-03-29 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109175567A (en) * | 2018-11-01 | 2019-01-11 | 中国电子科技集团公司第三十八研究所 | A kind of method for welding of micro-strip plate large area ground connection |
| CN114473284A (en) * | 2022-02-07 | 2022-05-13 | 郑州机械研究所有限公司 | Brazing flux filling device |
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| CN114473284A (en) * | 2022-02-07 | 2022-05-13 | 郑州机械研究所有限公司 | Brazing flux filling device |
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| CN106356424B (en) | 2019-03-29 |
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