CN214753801U - Series connection structure of heterojunction non-main grid battery piece - Google Patents

Series connection structure of heterojunction non-main grid battery piece Download PDF

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Publication number
CN214753801U
CN214753801U CN202120737002.4U CN202120737002U CN214753801U CN 214753801 U CN214753801 U CN 214753801U CN 202120737002 U CN202120737002 U CN 202120737002U CN 214753801 U CN214753801 U CN 214753801U
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China
Prior art keywords
heterojunction
battery piece
connection structure
adhesive film
battery
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Active
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CN202120737002.4U
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Chinese (zh)
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傅松楠
罗骞
尤宇文
谢延权
何广东
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Goldstone Fujian Energy Co Ltd
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Goldstone Fujian Energy Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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Abstract

The utility model discloses a heterojunction does not have tandem structure of main grid battery piece is equipped with one deck film protection between heterojunction does not have main grid battery piece and low melting point solder strip and glued membrane. The utility model discloses prevent at the lamination process, the interface layer between glued membrane melting infiltration battery piece and the solder strip appears, causes solder strip and the insulating problem of battery piece grid line.

Description

Series connection structure of heterojunction non-main grid battery piece
Technical Field
The utility model relates to a technical field that solar cell made especially relates to a heterojunction does not have tandem structure of main grid battery piece.
Background
The heterojunction battery is concerned by the industry due to the advantages of high conversion efficiency, low temperature coefficient, few process steps, no PID and LID attenuation of a P-type silicon chip and the like, and is expected to become the technical focus of the next generation. However, the manufacturing cost of the cell is high, which limits the advance of the technology, especially for the metal electrode module, since both sides of the cell need to use low-temperature silver paste, the consumption of the silver paste is large, and the price of the silver paste is high, the cost of the whole silver metal electrode accounts for 30% of the cost of the cell, so that the reduction of the consumption of the silver paste of the heterojunction cell is urgent.
In addition, low temperature soldering of heterojunction cells is also a technical problem in the industry. The silver paste and the interconnection bar need to be in good contact at 200 ℃, and firstly, a sufficient contact area needs to be formed between the main gate and the interconnection bar. However, in the current MBB technology, the width of a main grid of the battery is only less than 0.1mm (only a plurality of welding points are used for providing welding pull force for the battery), the window of a series welding process of the battery is small, and defects such as insufficient solder and over-welding are easy to occur in the manufacturing process. And there may be some potential safety concerns with respect to the reliability of subsequent components.
SUMMERY OF THE UTILITY MODEL
To the above problem, the utility model provides a heterojunction does not have tandem structure of main grid battery piece has reduced present heterojunction battery's low temperature silver thick liquid consumption by a wide margin, and avoids traditional series welding technology, has effectively improved badness such as rosin joint, the overwelding of subassembly.
A tandem structure of heterojunction master-less gate cells, comprising: and a layer of film protection is arranged between the heterojunction non-main-grid battery plate and the low-melting-point solder strip and the adhesive film.
Preferably, the thickness of the heterojunction main-gate-free battery plate is 100-150 um.
Preferably, the coating of the low-melting-point welding strip is a tin-bismuth or tin-lead series alloy conductive copper wire, the melting point is about 140-150 ℃, and the diameter is 0.2-0.35 mm.
Preferably, the adhesive film is EVA or POE, and the melting point is 140-150 ℃.
Preferably, the adhesive film has viscosity, the melting point is 150-160 ℃, and the maximum fluidity is lower than that of the adhesive film;
preferably, the lamination temperature is 150-.
The utility model has the advantages that: the low-temperature silver paste consumption can be saved by 40%; because the melting point of the film is higher than that of the adhesive film, and the fluidity is poorer than that of the adhesive film, the adhesive film can be ensured not to penetrate into an interface layer between the battery and the welding strip after being melted during lamination, so that the insulation between the welding strip and the grid line of the battery piece is caused, and the good ohmic contact between the heterojunction non-main-grid battery piece and the low-melting-point welding strip can be really realized.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. In the drawings:
fig. 1 is a top view of a heterojunction non-main gate battery of the present invention;
fig. 2 is a schematic diagram of the tandem structure of the heterojunction non-main gate battery plate of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1 and 2, the utility model provides a heterojunction does not have tandem structure of main grid battery piece, its characterized in that does not have main grid battery piece 3 of heterojunction and increases film 1/4 protection 5 between eutectic spot welding area 2 and the glued membrane to prevent the lamination process, glued membrane 5 melting infiltration battery piece 3 and the interface layer between welding area 2, cause the problem of welding area 2 and the 3 grid lines of battery piece are insulating. The heterojunction non-main-gate battery plate 3 has the size specifications of M2, G1, M6, M10 and the like, and the thickness of 100-150 mu M; the coating of the low-melting-point welding strip 2 is a tin-bismuth or tin-lead series alloy conductive copper wire, the melting point is 140-150 ℃, and the diameter is 0.2-0.35 mm; the adhesive film 5 is EVA or POE, and the melting point is 140-150 ℃; the film 1/4 has viscosity, melting point of about 150 ℃ and 160 ℃, and maximum fluidity far lower than that of the adhesive film 5; the lamination temperature was 150-160 ℃.
As shown in fig. 2, the series connection of the heterojunction battery plate without the main grid can be implemented by drawing two films 1 laid on the back of a battery plate 3 on a series welding machine, then drawing out a welding strip 2, and then grabbing a first battery plate 3, and at this time, finishing the joint of the grid line on the back of the first battery plate 3 and the welding strip 2; then, pulling out the welding strip 2 for connecting the front grid line of the first battery piece 3 with the back grid line of the second battery piece 3; then drawing out a film 4 which is laid on the front surface of the battery piece 3, and finishing the jointing of the grid line on the front surface of the first battery piece 3 and the welding strip 2; and then, grabbing the second battery piece 3, finishing the attachment of the grid line on the back of the second battery piece 3 and the welding strip 2, and repeating the steps to finally form a battery string to-be-manufactured assembly. The battery string, the adhesive film 5 and the patterned glass are prepared according to the conventional process and start to be laminated, and because the melting point of the adhesive film 1/4 is higher than that of the adhesive film 5 and the fluidity is poorer than that of the adhesive film 5, the adhesive film 5 can be ensured not to penetrate into an interface layer between the battery 3 and the solder strip 2 after being melted during lamination, so that the solder strip 2 is insulated from grid lines of the battery piece 3. At a lamination temperature of 150-.
The utility model discloses a heterojunction does not have main grid battery piece, can save 40% low temperature silver thick liquid quantity. Because the melting point of the film is higher than that of the adhesive film, and the fluidity is poorer than that of the adhesive film, the adhesive film can be ensured not to penetrate into an interface layer between the battery and the welding strip after being melted during lamination, so that the welding strip is insulated from a grid line of the battery, and good ohmic contact can be formed between the heterojunction non-main-grid battery and the low-melting-point welding strip.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims (5)

1. A tandem connection structure of heterojunction master-less gate cells, comprising:
and a layer of film protection is arranged between the heterojunction non-main-grid battery plate and the low-melting-point solder strip and the adhesive film.
2. The tandem connection structure of heterojunction master-less cell plates of claim 1, wherein: the thickness of the heterojunction non-main gate battery plate is 100-150 mu m.
3. The tandem connection structure of heterojunction master-less cell plates of claim 1, wherein: the coating of the low-melting-point welding strip is a tin-bismuth or tin-lead series alloy conductive copper wire, the melting point is about 140 ℃ and 150 ℃, and the diameter is 0.2-0.35 mm.
4. The tandem connection structure of heterojunction master-less cell plates of claim 1, wherein: the adhesive film is EVA or POE, and the melting point is 140-150 ℃.
5. The tandem connection structure of heterojunction master-less cell plates of claim 1, wherein: the adhesive film has viscosity, melting point of about 150 ℃ and 160 ℃, and maximum fluidity lower than that of the adhesive film.
CN202120737002.4U 2021-04-12 2021-04-12 Series connection structure of heterojunction non-main grid battery piece Active CN214753801U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202120737002.4U CN214753801U (en) 2021-04-12 2021-04-12 Series connection structure of heterojunction non-main grid battery piece

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202120737002.4U CN214753801U (en) 2021-04-12 2021-04-12 Series connection structure of heterojunction non-main grid battery piece

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CN214753801U true CN214753801U (en) 2021-11-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115101600A (en) * 2022-07-29 2022-09-23 常州时创能源股份有限公司 Current leading-out structure of HJT battery and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115101600A (en) * 2022-07-29 2022-09-23 常州时创能源股份有限公司 Current leading-out structure of HJT battery and preparation method thereof

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