JP2017054991A - 撮像素子及びそれを用いた撮像装置 - Google Patents

撮像素子及びそれを用いた撮像装置 Download PDF

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Publication number
JP2017054991A
JP2017054991A JP2015178951A JP2015178951A JP2017054991A JP 2017054991 A JP2017054991 A JP 2017054991A JP 2015178951 A JP2015178951 A JP 2015178951A JP 2015178951 A JP2015178951 A JP 2015178951A JP 2017054991 A JP2017054991 A JP 2017054991A
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JP
Japan
Prior art keywords
incident
absorber
photoelectric conversion
light
microlens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2015178951A
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English (en)
Japanese (ja)
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JP2017054991A5 (enExample
Inventor
愛彦 沼田
Aihiko Numata
愛彦 沼田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2015178951A priority Critical patent/JP2017054991A/ja
Priority to US15/256,289 priority patent/US20170077154A1/en
Publication of JP2017054991A publication Critical patent/JP2017054991A/ja
Publication of JP2017054991A5 publication Critical patent/JP2017054991A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2015178951A 2015-09-10 2015-09-10 撮像素子及びそれを用いた撮像装置 Withdrawn JP2017054991A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015178951A JP2017054991A (ja) 2015-09-10 2015-09-10 撮像素子及びそれを用いた撮像装置
US15/256,289 US20170077154A1 (en) 2015-09-10 2016-09-02 Image sensor and image pickup apparatus including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015178951A JP2017054991A (ja) 2015-09-10 2015-09-10 撮像素子及びそれを用いた撮像装置

Publications (2)

Publication Number Publication Date
JP2017054991A true JP2017054991A (ja) 2017-03-16
JP2017054991A5 JP2017054991A5 (enExample) 2018-10-18

Family

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Family Applications (1)

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JP2015178951A Withdrawn JP2017054991A (ja) 2015-09-10 2015-09-10 撮像素子及びそれを用いた撮像装置

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US (1) US20170077154A1 (enExample)
JP (1) JP2017054991A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088029A (ja) * 2018-11-19 2020-06-04 キヤノン株式会社 撮像素子および撮像装置
JP2020126978A (ja) * 2019-02-06 2020-08-20 キヤノン株式会社 撮像素子および撮像装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102661391B1 (ko) * 2016-10-12 2024-04-26 삼성전자주식회사 이미지 센서
TWI884979B (zh) * 2019-08-30 2025-06-01 日商凸版印刷股份有限公司 光電轉換元件、攝像元件及攝像系統

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7119319B2 (en) * 2004-04-08 2006-10-10 Canon Kabushiki Kaisha Solid-state image sensing element and its design support method, and image sensing device
JP5422889B2 (ja) * 2007-12-27 2014-02-19 株式会社ニコン 固体撮像素子及びこれを用いた撮像装置
FR2929460B1 (fr) * 2008-03-27 2010-04-23 Fed Mogul Systems Prot Group Dispositif de protection, notamment pour un element de connexion
JP5853351B2 (ja) * 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088029A (ja) * 2018-11-19 2020-06-04 キヤノン株式会社 撮像素子および撮像装置
JP7330687B2 (ja) 2018-11-19 2023-08-22 キヤノン株式会社 撮像素子および撮像装置
JP2023159224A (ja) * 2018-11-19 2023-10-31 キヤノン株式会社 撮像素子および撮像装置
JP2020126978A (ja) * 2019-02-06 2020-08-20 キヤノン株式会社 撮像素子および撮像装置
JP7352359B2 (ja) 2019-02-06 2023-09-28 キヤノン株式会社 撮像素子および撮像装置

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Publication number Publication date
US20170077154A1 (en) 2017-03-16

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