JP2017038060A - 太陽電池及び太陽電池の製造方法 - Google Patents
太陽電池及び太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 201
- 239000000758 substrate Substances 0.000 claims abstract description 195
- 239000012535 impurity Substances 0.000 claims abstract description 133
- 230000005684 electric field Effects 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000005368 silicate glass Substances 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
- 239000000969 carrier Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004286 SiNxOy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
Claims (15)
- 第1導電型の不純物を含有した半導体基板の一面全体に前記第1導電型と反対の第2導電型の不純物を注入する段階と、
前記半導体基板の一面と側面の全面と前記半導体基板の反対面の端までドーピング防止膜を形成する段階と、
前記ドーピング防止膜が形成された状態で、前記半導体基板の反対面に前記半導体基板より高濃度で前記第1導電型の不純物を注入する段階と、
前記半導体基板を熱処理して、前記半導体基板に前記第2導電型のエミッタ部と前記第1導電型の背面電界部を同時に形成する熱処理段階と、
前記ドーピング防止膜を除去する洗浄工程とを含む、太陽電池の製造方法。 - 前記熱処理段階により、前記半導体基板に注入された前記第1、第2導電型の不純物が同時に活性化される、請求項1に記載の太陽電池の製造方法。
- 前記第2導電型の不純物を注入する段階においては、前記半導体基板の反対面の端に至る側面まで前記第2導電型の不純物が注入される、請求項1に記載の太陽電池の製造方法。
- 前記第2導電型の不純物を注入する段階において、前記第2導電型の不純物が半導体基板の側面に注入される深さは、前記第2導電型の不純物が半導体基板の一面に注入される深さより浅い、請求項3に記載の太陽電池の製造方法。
- 前記ドーピング防止膜形成段階において、前記半導体基板の反対面の端に形成される前記ドーピング防止膜は、前記半導体基板の側面に注入された前記第2導電型の不純物が露出される前記半導体基板の反対面の端を覆う、請求項3に記載の太陽電池の製造方法。
- 前記半導体基板の反対面の端に形成される前記ドーピング防止膜の幅は、前記第2導電型の不純物が露出される前記半導体基板の反対面の端領域の幅より狭い、請求項5に記載の太陽電池の製造方法。
- 前記ドーピング防止膜は、前記第1、第2導電型の不純物がドーピングされない、請求項1に記載の太陽電池の製造方法。
- 前記ドーピング防止膜は、シリカ(SiO2)を含む珪酸塩ガラス(silicate glass)である、請求項7に記載の太陽電池の製造方法。
- 前記第1導電型の不純物を注入する段階において、前記第1導電型の不純物は、前記半導体基板の反対面の端を除外した領域全体に注入される、請求項3に記載の太陽電池の製造方法。
- 前記第1導電型の不純物を注入する段階において、前記第1導電型の不純物は、前記第2導電型の不純物が露出される前記半導体基板の反対面の端から離隔して注入される、請求項7に記載の太陽電池の製造方法。
- 前記熱処理段階によって形成される前記エミッタ部と前記背面電界部は、前記半導体基板の反対面の端で互いに離隔する、請求項1に記載の太陽電池の製造方法。
- 第1導電型の不純物を含有する半導体基板と、
前記半導体基板の一面に位置し、前記第1導電型と反対の第2導電型の不純物がドーピングされたエミッタ部と、
前記半導体基板の反対面に位置し、前記半導体基板より前記第1導電型の不純物が高濃度にドーピングされる背面電界部と、
前記エミッタ部に接続される第1電極と、
前記背面電界部に接続される第2電極とを含み、
前記エミッタ部は、前記半導体基板の側面に、さらに位置するが、前記半導体基板の反対面の端の側面まで位置し、
前記背面電界部は、前記半導体基板の反対面の端に位置するエミッタ部から離隔される太陽電池。 - 前記半導体基板の側面に位置するエミッタ部の深さは、前記半導体基板の一面に位置するエミッタ部の深さより小さい請求項12に記載の太陽電池。
- 前記半導体基板の側面に位置するエミッタ部の深さは、1nm〜10nmの間であり、
前記半導体基板の一面に位置するエミッタ部の深さは、0.2μm〜2μmの間である、請求項13に記載の太陽電池。 - 前記半導体基板の背面に位置する背面電界部の上には背面保護膜がさらに位置し、
前記背面保護膜は、前記半導体基板の反対面の端から前記背面電界部と前記エミッタ部の間の離隔された部分に露出される前記半導体基板を覆う、請求項12に記載の太陽電池。
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EP3131123A1 (en) | 2017-02-15 |
JP6352349B2 (ja) | 2018-07-04 |
US20170047459A1 (en) | 2017-02-16 |
KR20170019597A (ko) | 2017-02-22 |
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