JP2017005148A5 - - Google Patents
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- JP2017005148A5 JP2017005148A5 JP2015118588A JP2015118588A JP2017005148A5 JP 2017005148 A5 JP2017005148 A5 JP 2017005148A5 JP 2015118588 A JP2015118588 A JP 2015118588A JP 2015118588 A JP2015118588 A JP 2015118588A JP 2017005148 A5 JP2017005148 A5 JP 2017005148A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- film
- semiconductor film
- atoms
- film according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000010431 corundum Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015118588A JP6661124B2 (ja) | 2015-06-11 | 2015-06-11 | 半導体膜、積層構造体および半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015118588A JP6661124B2 (ja) | 2015-06-11 | 2015-06-11 | 半導体膜、積層構造体および半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017005148A JP2017005148A (ja) | 2017-01-05 |
| JP2017005148A5 true JP2017005148A5 (enrdf_load_stackoverflow) | 2018-08-02 |
| JP6661124B2 JP6661124B2 (ja) | 2020-03-11 |
Family
ID=57752333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015118588A Active JP6661124B2 (ja) | 2015-06-11 | 2015-06-11 | 半導体膜、積層構造体および半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6661124B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7078582B2 (ja) * | 2019-08-29 | 2022-05-31 | 信越化学工業株式会社 | 積層構造体、半導体装置及び結晶性酸化膜の成膜方法 |
| JP7078581B2 (ja) * | 2019-08-29 | 2022-05-31 | 信越化学工業株式会社 | 積層構造体及び半導体装置並びに積層構造体の製造方法 |
| JP7093329B2 (ja) * | 2019-09-02 | 2022-06-29 | 信越化学工業株式会社 | 積層構造体、半導体装置及び半導体システム |
| JP7348777B2 (ja) * | 2019-09-03 | 2023-09-21 | 信越化学工業株式会社 | 積層構造体の製造方法及び半導体装置の製造方法 |
| JP7097861B2 (ja) * | 2019-09-03 | 2022-07-08 | 信越化学工業株式会社 | 積層構造体、半導体装置及び半導体システム |
| JP7161457B2 (ja) * | 2019-09-03 | 2022-10-26 | 信越化学工業株式会社 | 積層構造体及び半導体装置並びに積層構造体の製造方法 |
| JP7161456B2 (ja) * | 2019-09-03 | 2022-10-26 | 信越化学工業株式会社 | 積層構造体及び半導体装置並びに積層構造体の製造方法 |
| JP6994694B2 (ja) * | 2020-02-27 | 2022-01-14 | 信越化学工業株式会社 | 成膜用霧化装置及びこれを用いた成膜装置 |
| CN114823977B (zh) * | 2022-04-25 | 2024-02-23 | 中国科学技术大学 | 氧化镓光电探测器的制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9099560B2 (en) * | 2012-01-20 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102101167B1 (ko) * | 2012-02-03 | 2020-04-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9362417B2 (en) * | 2012-02-03 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6175244B2 (ja) * | 2012-02-09 | 2017-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2015070248A (ja) * | 2013-10-01 | 2015-04-13 | 株式会社Flosfia | 酸化物薄膜及びその製造方法 |
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2015
- 2015-06-11 JP JP2015118588A patent/JP6661124B2/ja active Active