JP2017005148A5

JP2017005148A5 -

Info

Publication number: JP2017005148A5
Application number: JP2015118588A
Authority: JP
Filing date: 2015-06-11
Publication date: 2018-08-02
Anticipated expiration: 2035-06-11

Description

すなわち、本発明は、以下の発明に関する。
［１］ガリウムを含有する酸化物半導体を主成分として含む半導体膜であって、膜の一部または全部における水素濃度が２×１０^１７（ａｔｏｍｓ／ｃｍ^３）以下であることを特徴とする半導体膜。
［２］水素濃度が１×１０^１７（ａｔｏｍｓ／ｃｍ^３）以下である前記［１］記載の半導体膜。
［３］
膜の最表面から１００ｎｍ以上の深さにおける膜中の水素濃度が２×１０ ^１７（ａｔｏｍｓ／ｃｍ ^３）以下である請求項１記載の結晶性半導体膜。
［４］膜の一部または全部におけるハロゲン濃度が１×１０^１６（ａｔｏｍｓ／ｃｍ^３）以下である前記［１］〜［３］のいずれかに記載の半導体膜。
［５］酸化物半導体がコランダム構造を有する前記［１］〜［４］のいずれかに記載の半導体膜。
［６］酸化物半導体が、α−Ｇａ_２Ｏ_３を含む前記［１］〜［５］のいずれかに記載の半導体膜。
［７］ドーパントを含む、前記［１］〜［６］のいずれかに記載の半導体膜。
［８］前記［１］〜［７］のいずれかに記載の半導体膜を含む半導体装置。
［９］ダイオードまたはトランジスタである前記［８］記載の半導体装置。 That is, the present invention relates to the following inventions.
[1] A semiconductor film containing an oxide semiconductor containing gallium as a main component, wherein a hydrogen concentration in a part or all of the film is 2 × 10 ¹⁷ (atoms / cm ³ ) or less. film.
[2] The semiconductor film according to [1], wherein the hydrogen concentration is 1 × 10 ¹⁷ (atoms / cm ³ ) or less.
[3]
2. The crystalline semiconductor film according to claim 1 , wherein a hydrogen concentration in the film at a depth of 100 nm or more from the outermost surface of the film is 2 × 10 ¹⁷ (atoms / cm ³ ) or less.
[ 4 ] The semiconductor film according to any one of [1] to [3], wherein the halogen concentration in a part or all of the film is 1 × 10 ¹⁶ (atoms / cm ³ ) or less.
[ 5 ] The semiconductor film according to any one of [1] to [ 4 ], wherein the oxide semiconductor has a corundum structure.
[ 6 ] The semiconductor film according to any one of [1] to [ 5 ], wherein the oxide semiconductor contains α-Ga ₂ O ₃ .
[ 7 ] The semiconductor film according to any one of [1] to [6], including a dopant.
[8] Before SL [1] to a semiconductor device including a semiconductor film according to any one of [7].
[ 9 ] The semiconductor device according to [ 8 ], which is a diode or a transistor.

Claims

A semiconductor film including an oxide semiconductor containing gallium as a main component, wherein a hydrogen concentration in a part or all of the film is 2 × 10 ¹⁷ (atoms / cm ³ ) or less.

The semiconductor film according to claim 1, wherein the hydrogen concentration is 1 × 10 ¹⁷ (atoms / cm ³ ) or less.

The hydrogen concentration in the film at a depth of 100 nm or more from the outermost surface of the film is 2 × 10 ^１７17 (Atoms / cm ^３3 2. The crystalline semiconductor film according to claim 1, wherein:

The semiconductor film of any one of claims 1 to 3 of halogen concentration in some or all of the film is ^{1 × 10 16 (atoms / cm} 3) or less.

The semiconductor film according to any one of claims 1 to 4, the oxide semiconductor has a corundum structure.

Oxide semiconductor, a semiconductor film according to any one of claims 1 to 5 including the _α-Ga 2 _{O 3.}

The semiconductor film in any one of Claims 1-6 containing a dopant.

Semiconductor device including a semiconductor film according to any one of claims 1-7.

9. The semiconductor device according to claim 8, which is a diode or a transistor.