JP7093329B2 - Laminated structures, semiconductor devices and semiconductor systems - Google Patents

Description

The present invention relates to laminated structures, semiconductor devices and semiconductor systems.

Oxide semiconductors typified by gallium oxide (Ga ₂ O ₃ ) are expected to be applied to next-generation switching devices capable of achieving high withstand voltage, low loss, and high heat resistance as semiconductors with a large bandgap.

Japanese Unexamined Patent Publication No. 2014-072463 Japanese Unexamined Patent Publication No. 2013-028480

Patent Document 1 describes a method for producing gallium oxide (α-Ga ₂ O ₃ ) having a corundum structure at a relatively low temperature, but since α-Ga ₂ O ₃ is a metastable phase, There is the problem of thermal instability.

On the other hand, β-Ga ₂ O ₃ is the most stable phase, and the above-mentioned phase transition does not occur. Here, in order to apply a crystalline oxide film having a beta-gallian structure such as β-Ga ₂ O ₃ to a semiconductor device, the semiconductor characteristics, particularly the mobility of the crystalline oxide film are controlled, and the mobility is particularly high. It must have mobility. Patent Document 2 discloses a technique for doping an α-Ga ₂ O ₃ film with impurities. However, until now, control of semiconductor properties such as mobility of a crystalline oxide film having a beta-gallian structure has been described. , The study has not been advanced. In particular, no technical knowledge has been obtained for obtaining a crystalline oxide film having a beta-galia structure with high mobility.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a laminated structure having a crystalline oxide film having a beta-galia structure having excellent mobility.

The present invention has been made to achieve the above object, and is a laminated structure having a substrate and a crystalline oxide film having a betagallian structure, wherein the substrate contains lithium tantalate as a main component. Provided is a laminated structure which is a single crystal substrate, wherein the crystalline oxide film contains a dopant and the mobility is 30 cm ² / Vs or more.

Such a laminated structure has a crystalline oxide film having high mobility, is applicable to a semiconductor device, and has excellent semiconductor characteristics. In addition, since both the crystalline oxide film having a beta-galia structure and the lithium tantalate substrate are thermally stable, deterioration and fluctuation of characteristics are effectively prevented even in the case of a high-temperature process during the manufacture of semiconductor devices. can.

At this time, it is possible to form a laminated structure in which the carrier density of the crystalline oxide film is 1.0 × 10 ¹⁸ / cm ³ or more.

This results in a laminated structure having a high carrier density and a crystalline oxide film more suitable for semiconductor devices.

At this time, the main surface of the crystalline oxide film in the laminated structure may be a laminated structure having an a-plane, a b-plane, a c-plane, or a (-201) plane.

This results in a laminated structure having a crystalline oxide film having a beta-galia structure with higher crystallinity.

At this time, the dopant can be a laminated structure of tin, germanium, or silicon.

This results in a laminated structure that is more stable and has a crystalline oxide film with higher electrical properties.

At this time, the crystalline oxide film can be a laminated structure containing gallium, indium or aluminum.

This results in a laminated structure having excellent crystallinity and a crystalline oxide film having higher electrical properties.

At this time, the crystalline oxide film can be a laminated structure containing at least gallium.

This results in a laminated structure having a crystalline oxide film that is particularly thermally stable.

At this time, the semiconductor device including the above-mentioned laminated structure can be obtained. Further, it can be a semiconductor system including the semiconductor device.

As a result, a semiconductor device and a semiconductor system having excellent characteristics are obtained.

As described above, according to the laminated structure of the present invention, it has a crystalline oxide film having a beta-galia structure with high mobility, is applicable to a semiconductor device, and has excellent semiconductor characteristics. Since such a laminated structure has excellent mobility, it is useful for semiconductor devices. Further, since both the crystalline oxide film having the beta-galia structure and the lithium tantalate substrate are thermally stable, deterioration of the characteristics can be effectively prevented even in the case of a high-temperature process during the manufacture of the semiconductor device.

It is a schematic block diagram which shows an example of the laminated structure which concerns on this invention. It is a schematic block diagram which shows an example of the film-forming apparatus used for the film-forming method which concerns on this invention. An example of the mist-forming part of the film forming apparatus is shown. The temperature characteristics of the mobility of the β-Ga ₂ O ₃ film (Example 12) are shown.

Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.

As described above, it has been required to provide a laminated structure having a crystalline oxide film having a beta-galia structure having a high mobility.

As a result of diligent studies on the above-mentioned problems, the present inventors have obtained a laminated structure having a substrate and a crystalline oxide film having a beta-galia structure, wherein the substrate is simply composed of lithium tartrate as a main component. It is a crystalline substrate, and the crystalline oxide film contains a dopant and has a mobility of 30 cm ² / Vs or more. The laminated structure has a highly mobile crystalline oxide film and is applicable to semiconductor devices. The present invention has been completed by finding that it is possible, the semiconductor characteristics are excellent, and the characteristics are thermally stable, so that the deterioration of the characteristics can be effectively prevented even in the case of a high temperature process at the time of manufacturing the semiconductor device.

Hereinafter, description will be given with reference to the drawings.

(Laminated structure)
In one embodiment of the laminated structure 1 according to the present invention, as shown in FIG. 1, a crystalline oxide film 20 having a betagallian structure is laminated on a single crystal substrate 10 containing lithium tantalate as a main component. It is a laminated structure 1. A buffer layer or the like may be interposed between the single crystal substrate 10 and the crystalline oxide film 20.

Here, the term "crystallinity" means that the crystalline state includes a polycrystalline state or a single crystal state. Amorphous may be mixed in polycrystal or single crystal.

(Single crystal substrate containing lithium tantalate as the main component)
First, a single crystal substrate containing lithium tantalate as a main component of the laminated structure according to the present invention will be described.

When manufacturing the laminated structure according to the present invention, first, a single crystal substrate containing lithium tantalate as a main component is prepared. Here, the "single crystal substrate containing lithium tantalate as a main component" includes a substrate containing 50 to 100% lithium tantalate.

Lithium tantalate has an ilmenite structure and its lattice constant is relatively close to α-Ga ₂ O ₃ . The magnitude relationship between the distances between oxygen atoms on the α-Ga ₂ O ₃ (001) plane, the β-Ga ₂ O ₃ (-201) plane, and the lithium tantalate (001) plane is generally α-Ga ₂ O ₃ <Lithium tantalate <β-Ga ₂ O ₃ . Since β-Ga ₂ O ₃ is energetically more stable than α-Ga ₂ O ₃ , α-Ga ₂ O ₃ is not formed on the lithium tantalate substrate even at low temperatures, and β-Ga ₂ O ₃ is formed. It is presumed that they are formed preferentially.

Hereinafter, the lithium tantalate single crystal substrate will be described in more detail. The lithium tantalate single crystal substrate can be obtained, for example, by growing a lithium tantalate single crystal by the Czochralski method to form a lithium tantalate single crystal ingot, and slicing this ingot to process it into a substrate shape.

The lithium tantalate single crystal substrate in the laminated structure according to the present invention is preferably cut so that the lattice constant on its surface is close to the lattice constant of the crystalline oxide film to be deposited later. For example, when depositing a crystalline oxide film containing β-Ga ₂ O ₃ as a main component, it is preferable that the crystal orientation is cut so as to be within Z ± 10 °, and more preferably, the crystal orientation is It should be cut so that it is within Z ± 5 °. Further, as the crystal orientation, it is preferable that the substrate has the a-plane, the m-plane, the r-plane, or the c-plane as the main plane. In the case of a single crystal substrate having such a main surface, the crystalline oxide film formed on the substrate becomes a more stable and highly mobile crystalline oxide film. In addition, it becomes a crystalline oxide film having higher crystallinity.

Further, in the lithium tantalate single crystal substrate used for the laminated structure of the present invention, it is preferable that the uniform polarization state of the substrate promotes uniform growth of the oxide single crystal film. That is, it is preferable that the lithium tantalate substrate is subjected to a single polarization treatment or a multi-polarization treatment.

To obtain a single-polarized substrate, for example, a lithium tantalate single crystal ingot prepared by the Czochralski method is heated to 700 ° C., and a voltage of 200 V is applied in the crystal direction Z direction for 10 hours. After performing the polling process, it is advisable to slice the ingot and process it into a substrate shape. Further, the substrate itself processed into the substrate shape may be heated to 700 ° C., and a voltage of 200 V may be applied in the crystal direction Z direction to perform polling processing for 10 hours.

When a substrate subjected to a single polarization treatment is used, further pyroelectricity suppressing treatment is performed on the substrate surface to prevent the substrate from being charged when the crystalline oxide film is deposited on the heated substrate. Is preferable. In the pyroelectric suppression treatment, for example, a lithium tantalate single crystal substrate subjected to a single polarization treatment is embedded in lithium carbonate powder, and the temperature is 350 ° C. or higher and the Curie temperature (about 610 ° C.) in a reducing gas atmosphere. Heat treatment is performed at the following temperature. At this time, the volume resistivity in the thickness direction of the substrate is 1.0 × 10 ¹¹ Ω · cm or more, 2.0 × 10 ¹³ Ω · cm or less, and the maximum and minimum values of the volume resistivity in the substrate. When the treatment is performed so that the ratio of the above is 4.0 or less, the electrical resistivity of the substrate when the crystalline oxide film is deposited on the substrate can be effectively suppressed.

On the other hand, in order to obtain a multipolarized substrate, for example, a single crystal (ingot or substrate) once monopolarized or a single crystal (ingot or substrate) not subjected to the single polarization treatment is subjected to. It is heated to 700 ° C. or higher and annealed for several hours (preferably 1000 ° C. or higher, more preferably 5 hours or longer, further preferably 10 hours or longer), subjected to strain relaxation treatment, and in the case of an ingot, it is sliced and used as a substrate. It is good to process it into a shape. It is preferable to use a multipolarized substrate because it is possible to suppress the charge of the substrate when the crystalline oxide film is deposited on the heated substrate. In particular, if the average polarization size of the surface of the substrate is set to 5 μm or less, charging can be effectively suppressed. When the charging effect of the lithium tantalate substrate is suppressed, it is preferable that the crystalline oxide film is stably deposited. It is preferable that the composition of the lithium tantalate single crystal (at least on the surface of the substrate) is a congluent composition, because the average domain size of the polarization on the surface of the substrate tends to be small. Here, in the case of lithium tantalate, the congluent composition means that the ratio of Li to Ta is Li: Ta = 48.5-α: 51.5 + α, and α is −0.5 ≦ α ≦ 0.5. It means that it is a range.

When the surface of the single crystal substrate containing lithium tantalate as a main component is polished smoothly so that the unevenness becomes small, a flat laminated film of a crystalline oxide film can be obtained. Ra is preferably 10 nm or less. It is more preferable that Ra is 5 nm or less.

In addition, ions selected from hydrogen, helium, argon, and other rare gases are injected in advance into the surface of the single crystal substrate containing lithium tantalate as the main component to deposit the crystalline oxide film, and the ion is injected from 50 nm of the deposited surface. It is also possible to form a fragile layer directly below 3 μm. By doing so, after the crystalline oxide film is deposited, the deposited crystalline oxide film can be easily peeled off from the lithium tantalate single crystal substrate by giving an impact to the fragile layer.

The thickness of the single crystal substrate is not particularly limited, but is preferably 10 to 2000 μm, and more preferably 50 to 800 μm. The area of the substrate is preferably 100 mm ² or more, and more preferably the diameter (diameter) is 2 inches (50 mm) or more.

(Crystalline oxide film)
The crystalline oxide film in the laminated structure according to the present invention is a crystalline oxide film having a beta-galia structure. Crystalline oxide films are usually composed of metal and oxygen. The crystalline oxide film may contain, as a metal component, one or more metals selected from, for example, gallium, iron, indium, aluminum, vanadium, titanium, chromium, rhodium, iridium, nickel and cobalt. In particular, it preferably contains gallium, indium or aluminum, and more preferably contains at least gallium. It has high crystallinity and is thermally more stable. The crystalline oxide film may be single crystal or polycrystal as long as it has a beta-gallian structure.

Among the crystalline oxide films having a beta-gallia structure, those containing β-Ga ₂ O ₃ as a main component (50 to 100% in the film) are particularly preferable. β-Ga ₂ O ₃ is a thermally more stable crystalline oxide film.

Dopants are contained in the crystalline oxide film. For example, n-type dopants such as tin, germanium, silicon, titanium, zirconium, vanadium or niobium, or p-type dopants such as copper, silver, tin, iridium and rhodium can be mentioned. The dopant is not particularly limited, but is preferably tin. The concentration of the dopant may be, for example, about 1 × 10 ¹⁶ / cm ³ to 1 × 10 ²² / cm ³ , or even at a low concentration of about 1 × 10 ¹⁷ / cm ³ or less, about 1 × 10 ²⁰ . A high concentration of / ^cm3 or more may be used.

The crystalline oxide film in the laminated structure according to the present invention has a mobility of 30 cm ² / Vs or more. The mobility is preferably 50 cm ² / Vs or more, and more preferably the mobility is 100 cm ² / Vs or more. A laminated structure having such a crystalline oxide film having excellent electrical characteristics has excellent characteristics when applied to a semiconductor device.

Further, in the crystalline oxide film in the laminated structure according to the present invention, the carrier density is preferably 1.0 × 10 ¹⁸ / cm ³ or more, more preferably 1.0 × 10 ¹⁹ / cm ³ or more. belongs to. The semiconductor characteristics will be higher.

Further, the crystalline oxide film in the laminated structure according to the present invention has an electrical resistivity of 50 mΩcm or less, preferably 20 mΩcm or less, and more preferably 5 mΩcm or less. With low resistance, the semiconductor characteristics are higher.

Further, the main surface of the crystalline oxide film may be an a-plane, a b-plane, a c-plane or a (-201) plane. Those having such a main surface have more excellent electrical characteristics and also have high crystallinity of the film, and are more excellent for application to semiconductor devices.

In the laminated structure according to the present invention, the film thickness of the crystalline oxide film is not particularly limited, but may be, for example, 1.0 to 50 μm, preferably 5.0 to 30 μm, and more preferably 10 to 30 μm. It is 20 μm.

Another layer may be interposed between the single crystal substrate and the crystalline oxide film. The other layer is a layer having a composition different from that of the substrate and the crystalline oxide film of the outermost layer, and may be, for example, a crystalline oxide film, an insulating film, a metal film, or the like.

The laminated structure according to the present invention or the crystalline oxide film obtained from the laminated structure can be used in a semiconductor device by appropriately designing the structure. For example, Schottky barrier diode (SBD), metal semiconductor field effect transistor (MESFET), high electron mobility transistor (HEMT), metal oxide film semiconductor field effect transistor (PWM), electrostatic induction transistor (SIT), junction electric field effect. Each semiconductor layer such as a transistor (JFET), an insulated gate type bipolar transistor (IGBT), and a light emitting diode (LED) can be configured. Further, a semiconductor system using these semiconductor devices can be obtained.

(Film formation device)
The laminated structure according to the present invention contains at least lithium tartrate as a main component of mist generated by atomizing or dropletizing an aqueous solution containing a dopant source and a metal source such as gallium, using a carrier gas. It can be produced by a method of transporting it to a single crystal substrate and then thermally reacting the mist on the single crystal substrate to form a crystalline oxide film. A film forming apparatus capable of forming a laminated structure including such a crystalline oxide film will be described.

FIG. 2 shows an example of the film forming apparatus 101. The film forming apparatus 101 has a mist-forming unit 120 that converts a raw material solution into a mist to generate mist, a carrier gas supply unit 130 that supplies a carrier gas that conveys the mist, and a heat-treated mist to form a film on a substrate. It has a film forming section 140, a mist forming section 120, and a transport section 109 that connects the film forming section 140 and conveys mist by a carrier gas. Further, the film forming apparatus 101 may be controlled in its operation by providing a control unit (not shown) for controlling the whole or a part of the film forming apparatus 101.

Here, the mist in the present invention refers to a general term for fine particles of liquid dispersed in a gas, and includes those called mist, droplets, and the like.

(Raw material solution)
The raw material solution (aqueous solution) 104a contains a metal source such as gallium. That is, in addition to gallium, it can contain one or more metals selected from, for example, iron, indium, aluminum, vanadium, titanium, chromium, rhodium, iridium, nickel and cobalt. In particular, it preferably contains gallium, indium or aluminum, and more preferably at least gallium. A complex or salt obtained by dissolving or dispersing the metal in water can be preferably used. Examples of the form of the complex include an acetylacetonate complex, a carbonyl complex, an ammine complex, and a hydride complex. Examples of the salt form include metal chloride salt, metal bromide salt, metal iodide salt and the like. Further, a metal obtained by dissolving the above metal in hydrobromic acid, hydrochloric acid, hydroiodic acid or the like can also be used as an aqueous salt solution. The solute concentration is preferably 0.01 to 1 mol / L.

The raw material solution 104a contains a dopant element for controlling the electrical properties of the crystalline oxide film. For example, n-type dopants such as tin, germanium, silicon, titanium, zirconium, vanadium or niobium, or p-type dopants such as copper, silver, tin, iridium and rhodium can be mentioned. The dopant is not particularly limited, but is preferably tin. Further, it is preferable that the dopant element is ionized. Therefore, an acid may be mixed with the raw material solution 104a to promote the dissolution of the dopant element. Examples of the acid include hydrogen halides such as hydrobromic acid, hydrochloric acid, and hydroiodic acid, hypochlorous acid, hypochloric acid, hypobromic acid, bromine acid, hypoiodic acid, and iodic acid. Examples thereof include halogenoxo acids, carboxylic acids such as formic acid, nitric acid, and the like. It should be noted that heating or applying ultrasonic waves is also effective for promoting dissolution.

(Mist conversion department)
The mist-forming unit 120 adjusts the raw material solution 104a to mist the raw material solution 104a to generate mist. The mist-forming means is not particularly limited as long as the raw material solution 104a can be mist-ized, and may be a known mist-forming means, but it is preferable to use a mist-forming means by ultrasonic vibration. This is because it can be made into a mist more stably.

An example of such a mist-forming unit 120 is shown in FIG. For example, the mist generation source 104 in which the raw material solution 104a is housed, a container 105 in which a medium capable of transmitting ultrasonic vibration, for example, water 105a, and an ultrasonic oscillator 106 attached to the bottom surface of the container 105 may be included. good. Specifically, the mist generation source 104 consisting of a container containing the raw material solution 104a is stored in the container 105 containing the water 105a by using a support (not shown). An ultrasonic oscillator 106 is provided at the bottom of the container 105, and the ultrasonic oscillator 106 and the oscillator 116 are connected to each other. Then, when the oscillator 116 is operated, the ultrasonic oscillator 106 vibrates, the ultrasonic waves propagate into the mist generation source 104 via the water 105a, and the raw material solution 104a is configured to become mist.

(Transport section)
The transport unit 109 connects the mist-forming unit 120 and the film-forming unit 140. The mist is conveyed by the carrier gas from the mist generation source 104 of the mist-forming unit 120 to the film-forming chamber 107 of the film-forming unit 140 via the transport unit 109. The transport unit 109 may be, for example, a supply pipe 109a. As the supply tube 109a, for example, a quartz tube, a resin tube, or the like can be used.

(Film film part)
The film forming unit 140 heats the mist to cause a thermal reaction to form a film on a part or all of the surface of the substrate (single crystal substrate) 110. The film forming unit 140 is provided with, for example, a film forming chamber 107, and a substrate (single crystal substrate) 110 is installed in the film forming chamber 107, and a hot plate for heating the substrate (single crystal substrate) 110 is provided. 108 can be provided. The hot plate 108 may be provided outside the film forming chamber 107 as shown in FIG. 2, or may be provided inside the film forming chamber 107. Further, the film forming chamber 107 may be provided with an exhaust gas exhaust port 112 at a position that does not affect the supply of mist to the substrate (single crystal substrate) 110.

Further, the substrate (single crystal substrate) 110 may be installed on the upper surface of the film forming chamber 107 for face-down, or the substrate (single crystal substrate) 110 may be installed on the bottom surface of the film forming chamber 107 to face down. It may be up.

The thermal reaction may be such that the mist reacts by heating, and the reaction conditions and the like are not particularly limited. It can be appropriately set according to the raw material and the film film. For example, the heating temperature can be in the range of 250 to 900 ° C, preferably in the range of 300 ° C to 800 ° C, and more preferably in the range of 350 ° C to 700 ° C.

The thermal reaction may be carried out under any of a vacuum, a non-oxygen atmosphere, a reducing gas atmosphere, an air atmosphere and an oxygen atmosphere, and may be appropriately set according to the film film. Further, the reaction pressure may be carried out under any condition of atmospheric pressure, pressurization or reduced pressure, but the film formation under atmospheric pressure is preferable because the apparatus configuration can be simplified.

(Carrier gas supply section)
The carrier gas supply unit 130 has a carrier gas source 102a for supplying the carrier gas, and a flow rate control valve 103a for adjusting the flow rate of the carrier gas (hereinafter referred to as “main carrier gas”) sent out from the carrier gas source 102a. May be provided. Further, it is also possible to provide a dilution carrier gas source 102b for supplying a dilution carrier gas as needed, and a flow rate control valve 103b for adjusting the flow rate of the dilution carrier gas sent out from the dilution carrier gas source 102b. ..

The type of carrier gas is not particularly limited and can be appropriately selected depending on the film film. For example, an inert gas such as oxygen, ozone, nitrogen or argon, or a reducing gas such as hydrogen gas or forming gas can be mentioned. Further, the type of carrier gas may be one type or two or more types. For example, a diluted gas obtained by diluting the same gas as the first carrier gas with another gas (for example, diluted 10-fold) may be further used as the second carrier gas, or air may be used.

In the present specification, the flow rate Q of the carrier gas refers to the total flow rate of the carrier gas. In the above example, the total flow rate of the main carrier gas sent out from the carrier gas source 102a and the flow rate of the dilution carrier gas sent out from the dilution carrier gas source 102b is defined as the carrier gas flow rate Q.

The flow rate Q of the carrier gas is appropriately determined depending on the size of the film forming chamber and the substrate, but is usually 1 to 60 L / min, preferably 2 to 40 L / min.

(Film formation method)
Next, an example of a method for forming a crystalline oxide film according to the present invention will be described with reference to FIG. 2. First, the raw material solution 104a is housed in the mist generation source 104 of the mist conversion unit 120, and a single crystal substrate containing lithium tantalate as a main component, which is a substrate (single crystal substrate) 110, is directly or formed on the hot plate 108. It is installed through the wall of the membrane chamber 107 to operate the hot plate 108. Since lithium tantalate used as a single crystal substrate has a large coefficient of thermal expansion, it is preferable to gradually raise the temperature from a low temperature.

Next, the flow control valves 103a and 103b are opened to supply the carrier gas from the carrier gas sources 102a and 102b into the film forming chamber 107, and the atmosphere of the film forming chamber 107 is sufficiently replaced with the carrier gas, and the main carrier gas is sufficiently replaced. The carrier gas flow rate Q is controlled by adjusting the flow rate of the carrier gas and the flow rate of the carrier gas for dilution, respectively.

In the step of generating mist, the ultrasonic vibrator 106 is vibrated and the vibration is propagated to the raw material solution 104a through water 105a to mist the raw material solution 104a and generate mist. Next, in the step of transporting the mist by the carrier gas, the mist is transported from the mist-forming section 120 to the film forming section 140 via the transport section 109 by the carrier gas, and is introduced into the film forming chamber 107. The mist introduced into the film forming chamber 107 in the process of forming a film is heat-treated by the heat of the hot plate 108 in the film forming chamber 107 and undergoes a thermal reaction to form a film on the substrate (single crystal substrate) 110. To.

(Annealing process)
After forming the crystalline oxide film, it is also possible to flatten the film surface and perform annealing in order to further stabilize the electrical characteristics. As a condition of the annealing treatment, for example, the temperature can be set to 500 ° C. or higher. The upper limit is not particularly limited as long as the crystalline oxide film or the single crystal substrate can withstand the heat treatment, but can be, for example, 1000 ° C. The time of the annealing treatment is not particularly limited, but may be, for example, 1 minute or more. Further, in consideration of productivity, it is preferably 1 hour or less, and more preferably 30 minutes or less. The atmosphere of the annealing treatment is not particularly limited, but it is preferable to use an inert gas atmosphere such as nitrogen or a rare gas. Further, by such an annealing treatment, the surface roughness (arithmetic mean roughness: Ra) of the crystalline oxide film can be reduced to 0.1 μm or less. The effect of stabilizing electrical characteristics can be expected. The surface roughness represents an arithmetic mean roughness (Ra) calculated based on JIS B0601 using the surface shape measurement result for a region of 10 μm square by an atomic force microscope (AFM).

(Peeling)
The single crystal substrate may be peeled off from the crystalline oxide film. The peeling means is not particularly limited and may be a known means. For example, a means for peeling by applying a mechanical impact, a means for peeling by applying heat and utilizing thermal stress, a means for peeling by applying vibration such as ultrasonic waves, a means for etching and peeling, laser lift-off, and the like can be mentioned. Be done. By the peeling, a crystalline oxide film can be obtained as a self-supporting film.

(electrode)
A general method can be used for forming the electrodes required for forming the semiconductor device. That is, in addition to vapor deposition, sputtering, CVD, plating, etc., any printing method such as bonding with a resin or the like may be used. The electrode materials include Al, Ag, Ti, Pd, Au, Cu, Cr, Fe, W, Ta, Nb, Mn, Mo, Hf, Co, Zr, Sn, Pt, V, Ni, Ir, Zn, In. , Nd and other metals, as well as metal oxide conductive films such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO) and indium zinc oxide (IZO), and organic conductive compounds such as polyaniline, polythiophene or polypyrrole. Either of these may be used, and two or more of these alloys and mixtures may be used. The thickness of the electrode is preferably 1 to 1000 nm, more preferably 10 to 500 nm.

Hereinafter, the present invention will be described in detail with reference to examples, but this is not limited to the present invention.

(Example 1)
A laminated structure in which non-doped β-Ga ₂ O ₃ was formed as a buffer layer on a lithium tantalate single crystal substrate and β-Ga ₂ O ₃ was formed as a crystalline oxide film on the non-doped β-Ga 2 O 3 was prepared. , Evaluated. The manufacturing conditions are as follows.

(Structure of laminated structure)
Substrate: Lithium tantalate single crystal substrate manufactured by Shin-Etsu Chemical Co., Ltd.
Diameter 2 inches (50 mm), thickness 200 μm, m surface
Mirror finish buffer layer: β-Ga ₂ O ₃ (non-doped)
Crystalline oxide film: β-Ga ₂ O ₃

(Conditions for forming a crystalline oxide film)
Film formation method: Mist CVD method Raw material aqueous solution: Gallium bromide
Tin chloride
Ga: Sn = 1: 0.02
Hydrogen bromide 10%
Carrier gas: N ₂ , 2 L / min
Diluted gas: N ₂ , 4.5 L / min
Film formation temperature: 400 ° C
Film formation time: 180 minutes

Specifically, first, a lithium tantalate single crystal substrate having a congluent composition (Li / (Li + Ta) value of 0.485) was prepared as a single crystal substrate. The lithium tantalate single crystal produced by the Czochralski method is Z-axis cut, processed into an m-plane substrate, heat-treated at 700 ° C. for 10 hours, subjected to multipolarization treatment, and the surface is polished. The surface roughness Ra was set to 0.5 nm.

Next, a raw material aqueous solution was prepared. Using gallium bromide as the gallium source, the concentration of gallium bromide is 1.0 × 10 ^-1 mol / L, and the atomic number ratio of gallium bromide and tin chloride is 1: 0.02. The aqueous solution was adjusted as described above. A 48% hydrobromic acid solution having a volume ratio of 10% was added to the prepared aqueous solution to prepare a raw material aqueous solution.

The raw material solution 104a obtained as described above was housed in the mist generation source 104. Next, as the substrate (single crystal substrate) 110, a lithium tantalate single crystal substrate having a main surface of m surface, a diameter of 2 inches (50 mm), and a thickness of 200 μm is placed on a hot plate 108 in the film forming chamber 107. The hot plate 108 was operated to raise the temperature to 400 ° C.

Subsequently, the flow control valves 103a and 103b are opened to supply nitrogen gas as a carrier gas from the carrier gas sources 102a and 102b into the film forming chamber 107, and the atmosphere of the film forming chamber 107 is sufficiently replaced with the carrier gas. The flow rate of the main carrier gas was adjusted to 2 L / min, and the flow rate of the carrier gas for dilution was adjusted to 4.5 L / min. That is, the carrier gas flow rate Q = 6.5 L / min.

Next, the ultrasonic vibrator 106 was vibrated at 2.4 MHz, and the vibration was propagated to the raw material solution 104a through water 105a to mist the raw material solution 104a to generate mist. This mist was introduced into the film forming chamber 107 through the supply pipe 109a by the carrier gas. Then, under the conditions of atmospheric pressure, 400 ° C., and a film forming time of 180 minutes, the mist was thermally reacted in the film forming chamber 107 to form Ga ₂ O ₃ on the lithium tantalate single crystal substrate.

The film thickness of the formed crystalline oxide film was measured using a reflectance spectroscopic film thickness meter. The film thickness of the crystalline oxide film obtained in this example was 2.9 μm.

(Example 2-4)
A crystalline oxide film was obtained in the same manner as in Example 1 except that an m-plane lithium tantalate substrate having an off-angle was used as the substrate. The off-angle was 0.5 ° in Example 2, 3.0 ° in Example 3, and 4.0 ° in Example 4. The film thickness of the obtained crystalline oxide film was 3.4 μm in Example 2, 3.1 μm in Example 3, and 1.8 μm in Example 4, respectively.

(Example 5)
Gallium iodide was used instead of gallium bromide as the raw material solution, and the atomic number ratio of gallium to tin was changed to 1: 0.05, and β-Ga ₂ O ₃ was used as a substrate on the surface and as a buffer layer. A crystalline oxide film was obtained in the same manner as in Example 1 except that an m-plane lithium tantalum substrate on which (Sn-doped) was laminated was used. The film thickness of the obtained crystalline oxide film was 3.3 μm.

(Example 6)
As the substrate, a crystalline oxide film was formed in the same manner as in Example 1 except that an m-plane lithium tantalate substrate having no buffer layer laminated on the surface was used and the film formation time was set to 60 minutes. Obtained. The film thickness of the obtained crystalline oxide film was 0.6 μm.

(Example 7)
As a substrate, a lithium a-plane tantalate substrate having β-Ga ₂ O ₃ (non-doped) laminated on the surface as a buffer layer was used, and as a raw material solution, germanium oxide was used instead of tin chloride, and gallium was used. A crystalline oxide film was obtained in the same manner as in Example 1 except that the atomic number ratio of germanium was 1: 0.02. The film thickness of the obtained crystalline oxide film was 3.2 μm.

(Example 8)
A crystalline oxide film was obtained in the same manner as in Example 1 except that an a-side lithium tantalate substrate on which β-Ga ₂ O ₃ (Sn-doped) was laminated as a buffer layer was used as the substrate. .. The film thickness of the obtained crystalline oxide film was 2.8 μm.

(Example 9)
A crystalline oxide film was obtained in the same manner as in Example 1 except that silicon bromide was used as the dopant raw material. The film thickness of the obtained crystalline oxide film was 2.8 μm.

(Example 10)
As the raw material solution, gallium acetylacetonate was used instead of gallium bromide, the atomic number ratio of gallium to tin was changed to 1: 0.08, and the concentration of gallium was 5.0 × ^10-2 . A crystalline oxide film was obtained in the same manner as in Example 1. The film thickness of the obtained crystalline oxide film was 1.6 μm.

(Example 11)
A crystalline oxide film was obtained in the same manner as in Example 1 except that a c-plane lithium tantalate substrate having β-Ga ₂ O ₃ (non-doped) laminated on the surface as a buffer layer was used as the substrate. The film thickness of the obtained crystalline oxide film was 3.0 μm.

(Example 12)
A crystalline oxide film was obtained in the same manner as in Example 11 except that gallium iodide was used as the raw material solution instead of gallium bromide. The film thickness of the obtained crystalline oxide film was 3.6 μm.

(Example 13)
A crystalline oxide film was obtained in the same manner as in Example 1 except that an r-plane lithium tantalate substrate on which β-Ga ₂ O ₃ (non-doped) was laminated as a buffer layer was used as the substrate. The film thickness of the obtained crystalline oxide film was 2.9 μm.

(Comparative example)
The film was formed in the same manner as in Example 1 except that a lithium tantalate substrate having a (013) surface as a main surface was used as the substrate.

(Evaluation of crystallinity)
The phase of the formed crystalline oxide film was identified by performing a 2θ / ω scan from 10 degrees to 120 degrees using an XRD diffractometer. The measurement was performed using CuKα ray. As a result, the obtained crystalline oxide film was c-plane β-Ga ₂ O ₃ in Examples 1-6, 9 and 10, and b-plane β-Ga ₂ O ₃ in Examples 7 and 8. In Examples 11 and 12, it was β-Ga ₂ O ₃ having the (-201) plane as the main plane, and in Example 13, it was β-Ga ₂ O ₃ a-plane. The plane orientation of the crystalline oxide film obtained in the comparative example could not be identified.

The crystalline oxide film obtained in Examples 1-6, 9 and 10 was around 31.8 degrees, and the crystalline oxide film obtained in Examples 7 and 8 was around 61.1 degrees. The crystalline oxide film obtained in 11 and 12 has a locking curve near 38.5 degrees, and the crystalline oxide film obtained in Example 13 has a locking curve at a 2θ / ω scan peak position near 30.2 degrees. Table 1 shows the results of measuring the half price range. In the comparative example, the half width was not calculated.

(Evaluation of electrical characteristics 1)
The Hall effect was measured by the van der pauw method for the crystalline oxide films obtained in Examples 1-13 and Comparative Examples. Table 1 shows the measured carrier density, mobility and resistivity. As shown in Table 1, in the comparative example, the mobility was 10 cm ² / Vs or less, and the film had a low mobility. However, the crystalline oxide film according to the present invention has excellent electrical characteristics, and in particular. It can be seen that the mobility is high. The carrier density was also less than 1.0 × 10 ¹⁸ / cm ³ in Comparative Example, but in Example 1-13, a carrier density having a high carrier density was obtained.

(Evaluation of electrical characteristics 2)
The temperature characteristics of the mobility of the β-Ga ₂ O ₃ film (carrier density 2.78 × 10 ¹⁹ ) obtained in Example 12 were investigated using a temperature variable Hall effect measuring device. The results are shown in Table 2 and FIG. As is clear from Table 2 and FIG. 4, the mobility is 157 cm ² / Vs even in the low temperature range, and the electrical characteristics are good even in the high temperature range.

The present invention is not limited to the above embodiment. The above-described embodiment is an example, and any one having substantially the same structure as the technical idea described in the claims of the present invention and having the same effect and effect is the present invention. Is included in the technical scope of.

1 ... laminated structure, 10 ... single crystal substrate, 20 ... crystalline oxide film,
101 ... film forming apparatus, 102a ... carrier gas source,
102b ... Carrier gas source for dilution, 103a ... Flow control valve,
103b ... Flow control valve, 104 ... Mist source, 104a ... Raw material solution (aqueous solution),
105 ... container, 105a ... water, 106 ... ultrasonic oscillator, 107 ... film formation chamber,
108 ... hot plate, 109 ... transport section, 109a ... supply pipe,
110 ... Substrate (single crystal substrate), 112 ... Exhaust port, 116 ... Oscillator,
120 ... Mist conversion section, 130 ... Carrier gas supply section, 140 ... Film formation section.

Claims (8)

A laminated structure having a substrate and a crystalline oxide film having a beta-galia structure.
The substrate is a single crystal substrate containing lithium tantalate as a main component.
A laminated structure characterized in that the crystalline oxide film contains a dopant and has a mobility of 30 cm ² / Vs or more. The laminated structure according to claim 1, wherein the carrier density of the crystalline oxide film is 1.0 × 10 ¹⁸ / cm ³ or more. The laminated structure according to claim 1 or 2, wherein the main surface of the crystalline oxide film in the laminated structure is an a-plane, a b-plane, a c-plane or a (-201) plane. .. The laminated structure according to any one of claims 1 to 3, wherein the dopant is tin, germanium, or silicon. The laminated structure according to any one of claims 1 to 4, wherein the crystalline oxide film contains gallium, indium, or aluminum. The laminated structure according to any one of claims 1 to 5, wherein the crystalline oxide film contains at least gallium. A semiconductor device comprising the laminated structure according to any one of claims 1 to 6. A semiconductor system comprising the semiconductor device according to claim 7.

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