JP2017003295A - Measurement device and semiconductor device measurement method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a measurement device and semiconductor device measurement method that can use a known measurement device as it is, and can measure electric characteristics of a semiconductor device of various pad arrangements.SOLUTION: A measurement device comprises: a substrate; a first probe that is fixed to the substrate, and is extendable/contractable in the long-side direction; a second probe that is fixed to the substrate and extendable/contractable in the long-side direction; and a mask that includes an opening part contracting the first probe in comparison with a state where a semiconductor device hits a tip end of the first probe and force is not applied on the first probe, and causing the second probe to pass.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a measuring device for measuring electrical characteristics of a semiconductor device such as an IGBT (Insulated Gate Bipolar Transistor), and a measuring method for the semiconductor device.

  Patent Document 1 discloses a measuring apparatus including a plurality of extendable probes (conductive contacts). When measuring the electrical characteristics of the semiconductor device with this measuring apparatus, one probe is brought into contact with the terminal of the semiconductor device, while another probe is not brought into contact with the terminal of the semiconductor device by being contracted by the guide plate. More specifically, by reducing the opening diameter of the guide plate, a probe that is not used for measurement is brought into contact with the guide plate and is contracted.

JP 2012-145454 A

  However, in the measuring apparatus of the above-mentioned patent document, in order to bring the guide plate into contact with the probe, a protrusion must be provided in the short direction of the probe. Use of a measuring device having such a special shape causes high costs.

  In addition, since the probes cannot be brought close to each other by providing the protrusions in the short direction of the probes, the probes cannot be provided at a high density.

  The present invention has been made to solve the above-described problems, and a known measuring device in which a probe is fixed to a substrate can be used as it is, and the electrical characteristics of semiconductor devices having various electrode arrangements can be used. It is an object of the present invention to provide a measuring device capable of measuring and a measuring method of a semiconductor device.

  A measuring apparatus according to the invention of the present application includes a substrate, a first probe fixed to the substrate and capable of extending and contracting in the longitudinal direction, a second probe fixed to the substrate and capable of extending and contracting in the longitudinal direction, and the first probe. And a mask having an opening through which the first probe is contracted and the second probe is passed, compared to a state where no force is applied to the first probe.

  Another measuring apparatus according to the invention of the present application is a tray supporting the semiconductor device, a first substrate above the tray, and being fixed to the first substrate while exposing an upper surface and a lower surface of the semiconductor device. A first probe that can be expanded and contracted in the direction of the tray; a second probe that is fixed to the first substrate and can be expanded and contracted in the direction of the tray; a second substrate below the tray; and the second substrate. A third probe fixed and extendable in the direction of the tray, and a fourth probe fixed to the second substrate and extendable in the direction of the tray are provided.

  The method for measuring a semiconductor device according to the invention of the present application includes a step of placing a semiconductor device having an upper surface electrode on a stage, a substrate, a first probe fixed to the substrate and capable of expanding and contracting in the direction of the stage, A second probe fixed to the substrate and capable of expanding and contracting in the direction of the stage; and the first probe is contracted as compared to a state where no force is applied to the first probe at the tip of the first probe; A contact step of bringing a measuring jig having an opening through which the two probes pass through close to the upper surface electrode and bringing the second probe into contact with the upper surface electrode; And a step of measuring the electrical characteristics of the device.

  According to the present invention, by making at least one probe unusable with a mask, it is possible to use a well-known measuring device in which a probe is fixed to a substrate as it is, and to electrically use semiconductor devices having various pad arrangements. The characteristics can be measured.

1 is a configuration diagram illustrating a measurement apparatus according to Embodiment 1. FIG. It is a front view of the 1st probe which expands and contracts in a longitudinal direction. It is sectional drawing of a mask. It is a bottom view of a mask. It is a figure which shows the semiconductor device etc. which were mounted on the stage. It is a figure which shows the contact state of an electrode and a probe. It is a figure which shows the measurement jig | tool etc. after finishing a contact process. FIG. 6 is a partial cross-sectional view illustrating a measurement apparatus and a semiconductor device according to a second embodiment. FIG. 6 is a partial cross-sectional view showing a measurement apparatus and a semiconductor device according to a third embodiment. FIG. 6 is a partial cross-sectional view showing a measuring apparatus and a semiconductor device according to a fourth embodiment. It is a figure which shows the measuring apparatus and semiconductor device which concern on Embodiment 5. FIG. It is a figure which shows the measuring apparatus and semiconductor device after a contact process. It is a figure which shows the measuring apparatus and semiconductor device which concern on Embodiment 6. FIG. It is a figure which shows the measuring apparatus and semiconductor device after a contact process. FIG. 10 is a diagram illustrating a method for measuring a semiconductor device according to a seventh embodiment.

  A measurement apparatus according to an embodiment of the present invention and a measurement method of a semiconductor device will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.

Embodiment 1 FIG.
FIG. 1 is a configuration diagram illustrating a measuring apparatus according to the first embodiment. This measuring apparatus includes a substrate 10 made of, for example, ceramic. A first probe 14 that can expand and contract in the longitudinal direction (Z direction) and second probes 16 and 18 that can expand and contract in the longitudinal direction (Z direction) are fixed to the substrate 10. In FIG. 1, five first probes 14, one second probe 16, and one second probe 18 are shown. Although it will not specifically limit if the 1st probe 14 and the 2nd probes 16 and 18 can be expanded-contracted to a longitudinal direction, For example, it is a known spring type probe.

  FIG. 2 is a front view of the first probe 14 that expands and contracts in the longitudinal direction. The first probe 14 includes a base portion 14a. The upper end of the base portion 14 a is connected to the substrate 10. The base part 14a is connected with an expansion / contraction part 14c in which a spring member such as a spring is incorporated and can be expanded and contracted. A distal end portion 14d that contacts the upper surface electrode 30a of the semiconductor device is connected to the expandable portion 14c. A portion of the tip end portion 14d facing the upper surface electrode 30a has a rounded shape, and this rounded portion mechanically and electrically contacts the upper surface electrode 30a. A connection portion 14b that is electrically connected to the tip portion 14d and serves as an output end to the outside is connected to the upper portion of the base portion 14a.

  Although the material of the 1st probe 14 will not be specifically limited if it is an electroconductive material, For example, they are copper, tungsten, or rhenium tungsten. The tip portion 14d may be coated with, for example, gold, palladium, tantalum, platinum, or the like to improve conductivity and durability.

  FIG. 2A shows an initial state in which the first probe 14 and the upper surface electrode 30a are separated. FIG. 2B is a diagram illustrating that the first probe 14 is moved in the arrow direction (Z negative direction) and the tip portion 14d is brought into contact with the upper surface electrode 30a. FIG. 2C shows a state in which the first probe 14 is further lowered from the state of FIG. 2B, the spring of the expansion / contraction part 14c is contracted, and the expansion / contraction part 14c is pushed into the base part 14a. In the state of FIG. 2C, the tip 14d is pressed against the upper surface electrode 30a with an appropriate force, so that the first probe 14 and the upper surface electrode 30a are reliably in contact with each other. The second probes 16 and 18 have the same configuration as the first probe 14.

  Returning to the description of FIG. A mask 12 is fixed to the substrate 10. Although the mask 12 covers the first probe 14, a cross section of the mask 12 is shown so that the first probe 14 can be seen. The mask 12 is fixed to the substrate 10 in a removable state by any method. For example, the mask 12 is fixed to the substrate 10 by fitting the mask 12 into a groove provided in the substrate 10. Alternatively, the mask 12 may be screwed to the substrate 10. One purpose of providing the mask 12 is to shrink a predetermined probe so that it cannot be used for measurement. FIG. 1 shows that the first probe 14 is contracted compared to a state in which the mask 12 hits the tip of the first probe 14 and no force is applied to the first probe 14. The mask 12 is provided with an opening 12a. The second probes 16 and 18 extend out of the mask 12 through the opening 12a.

  A connecting portion 20 is provided on the upper surface of the substrate 10. The connection unit 20 is electrically connected to the first probe 14 and the second probes 16 and 18 by, for example, a metal plate provided on the substrate 10. The connection unit 20 is connected to the measurement unit 24 via the signal line 22. Therefore, the first probe 14 and the second probes 16 and 18 and the measurement unit 24 are electrically connected.

  A stage 32 is provided for mounting the semiconductor device. The stage 32 is not particularly limited as long as it contacts and fixes the semiconductor device. However, the stage 32 is a chuck stage that vacuum-sucks or electrostatically-sucks a semiconductor device (chip) or a wafer on which a plurality of semiconductor devices are formed. . The chuck stage has been widely used since it has excellent maintainability. The surface of the stage 32 that comes into contact with the lower surface electrode of the semiconductor device is electrically connected to a connection portion 34 provided on the side surface of the stage. The connection unit 34 is electrically connected to the measurement unit 24 via the signal line 36. The stage 32 is made of a metal material such as copper or aluminum so as to function as a lower electrode during measurement. Note that the surface of the stage 32 may be coated with, for example, gold, aluminum, or nickel to improve the conductivity and durability of the stage.

  When measuring a semiconductor device, it is composed of a probe in contact with the upper surface electrode of the semiconductor device, a connection unit 20, a signal line 22, a measurement unit 24, a signal line 36, a connection unit 34, and a stage 32 in contact with the lower surface electrode of the semiconductor device. Current is passed through the path. It is preferable to provide each connecting portion at a position where the current path length from the connecting portion 20 to the connecting portion 34 substantially matches through any probe so that the current density applied to each probe substantially matches. Specifically, the X coordinate of each probe is preferably set to a value between the X coordinate of the connection unit 20 and the X coordinate of the connection unit 34.

  The substrate 10 can be moved in any direction by the arm 40. Although the substrate 10 is held by one arm 40 here, the present invention is not limited to this, and the substrate 10 may be stably held by a plurality of arms. Instead of moving the substrate 10, the stage 32 on which the semiconductor device is placed may be moved.

  The measurement unit 24 moves the arm in an arbitrary direction, and at the time of measurement, flows current or applies voltage to the semiconductor device in order to acquire data of predetermined measurement items. The measurement unit 24 includes, for example, a memory that stores a program and a processor that executes the program.

  FIG. 3 is a cross-sectional view of the mask 12 and the like. The mask 12 includes a connecting portion 12A provided to be fixed (connected) to the substrate 10 and a contact portion 12B connected to the connecting portion 12A and in contact with the tip of the first probe 14 in a contracted state. The material of the connecting portion 12A may be an insulator such as PPS resin or a metal such as aluminum or stainless steel. The contact portion 12B includes a metal portion 12C, a first insulating portion 12D provided on the upper surface of the metal portion 12C, and a second insulating portion 12E provided on the lower surface of the metal portion 12C.

  The tip of the first probe 14 is in contact with the first insulating portion 12D. Thereby, the 1st probe 14 and the metal part 12C can be insulated. By making the first insulating portion 12D an insulating material such as polyimide and a soft material to some extent, the first probe 14 can be prevented from coming into contact with the first insulating portion 12D and being damaged.

  The second insulating portion 12E is formed on the surface (lower surface) of the mask 12 that faces the stage. The second insulating portion 12E is a portion that is close to or in contact with the semiconductor device to be measured. Therefore, it is preferable that the second insulating portion 12E is also made of a material having an insulating property and a certain degree of softness. The material of the second insulating portion 12E is, for example, polyimide.

  FIG. 4 is a bottom view of the mask 12. The opening 12a is quadrangular in plan view. It is preferable that the area of the opening 12a is equal to or smaller than the area of the upper surface electrode of the semiconductor device so that only the upper surface electrode is present immediately below the opening 12a. Thereby, an upper surface electrode and a probe can be made to contact reliably.

  A method for measuring a semiconductor device using the above-described measuring apparatus will be described. First, as a preparatory work for measurement, the parallelism of the probes is aligned. Then, with reference to the measurement menu (program) registered in the measurement unit 24, information on the arrangement of the upper surface electrode of the semiconductor device to be measured is acquired. This information is displayed on a display or the like, and the worker refers to the display and fixes the mask 12 on the substrate 10 in accordance with the arrangement of the upper surface electrodes of the semiconductor device.

  Thereafter, the semiconductor device is placed on the stage. FIG. 5 is a diagram showing the semiconductor device 30 and the like placed on the stage 32. The semiconductor device 30 has upper surface electrodes 30a and 30b and a lower surface electrode 30c. The semiconductor device 30 is an IGBT having a vertical structure that allows a large current to flow in the vertical direction, that is, the out-of-plane direction. In this case, the upper electrode 30a is a gate electrode, the upper electrode 30b is an emitter electrode, and the lower electrode 30c is a collector electrode. The lower surface electrode 30 c is in contact with the stage 32. Note that the measurement target may be a vertical semiconductor device other than the IGBT, or a horizontal semiconductor device that performs input / output on one surface (upper surface) of the semiconductor device.

  As shown in FIG. 5, the stage 32 is at a position facing the second probes 16 and 18 extending from the opening 12 a to the outside of the mask 12. The first probe 14 and the second probes 16 and 18 are fixed to the substrate 10 so as to expand and contract in the direction of the stage 32. The second probes 16 and 18 extending in the direction of the stage 32 through the opening 12a are extendable. On the other hand, the first probe 14 is maintained in a contracted state by the mask 12.

  Next, the process proceeds to the contact process. In the contact process, a measuring jig (referred to as a probe and a structure integrated therewith) is brought close to the upper surface electrodes 30a and 30b, and the second probes 16 and 18 are brought into contact with the upper surface electrodes 30a and 30b. Let FIG. 6 shows a state in which the second probes 16 and 18 are in contact with the upper surface electrodes 30a and 30b and the stage 32 is in contact with the lower surface electrode 30c. When flowing a large current through the semiconductor device 30, it is desirable to bring a plurality of second probes into contact with the upper surface electrode 30b.

  Thereafter, the measurement jig is brought closer to the semiconductor device 30. Then, the second probes 16 and 18 are contracted, and the second probes 16 and 18 are pressed against the upper surface electrodes 30a and 30b with an appropriate force. FIG. 7 is a diagram illustrating the measurement jig and the like after the contact process. When the contact process is finished, the mask comes into contact with the upper surface of the semiconductor device. Specifically, the second insulating portion 12E (see FIG. 3) is in contact with the upper surface electrode 30b of the semiconductor device. The second insulating portion 12E may be in wide contact with portions other than the upper surface electrode of the semiconductor device. The effect of fixing the semiconductor device 30 can be expected by bringing the mask 12 into contact with the semiconductor device 30. In addition, discharge can be prevented from occurring on the upper surface of the semiconductor device 30 during measurement. If the second insulating portion 12E is made of a soft material to some extent, damage to the semiconductor device 30 due to contact between the mask 12 and the semiconductor device 30 can be suppressed.

  Next, an electric current is passed between the second probes 16 and 18 and the stage 32 to measure the electrical characteristics of the semiconductor device 30. Measurement is performed by the measurement unit 24 based on a predetermined measurement sequence. In addition to such measurement, an evaluation may be performed to determine whether or not the measurement value is within a predetermined standard value range. When the measurement is completed, the measurement unit 24 makes full use of the arm 40 to move the substrate 10 upward, and separates the measurement jig from the semiconductor device 30.

  If there is only one semiconductor device to be measured, the process ends at this stage. However, if there are a plurality of semiconductor devices to be measured, measurement is performed on an unmeasured semiconductor device. If the arrangement of the upper surface electrode of the semiconductor device after the measurement is different from the arrangement of the upper surface electrode of the semiconductor device to be measured next time, the mask needs to be replaced. For this reason, it is desirable to determine whether or not the mask needs to be replaced before proceeding to the next measurement, and to notify the operator if the mask needs to be replaced.

  Since the measuring apparatus according to Embodiment 1 of the present invention can be manufactured by simply fixing the mask 12 to a known measuring apparatus, it is suitable for cost reduction. Further, unlike the probe of Patent Document 1, it is not necessary to provide a protruding portion in the short direction of the probe, so that the probe can be provided with high density. By making the part which contacts the 1st probe 14 among the masks 12 into the material which has insulation, the insulation of the 1st probe 14 is securable.

  By making the opening 12a smaller than the upper surface electrodes 30a and 30b of the semiconductor device 30 in plan view, only the upper surface electrode can be provided directly under the opening 12a. Thereby, the 2nd probe which penetrates the opening part 12a can be made to contact an upper surface electrode reliably. The opening 12a may be formed to be circular in plan view. When the mask is made of metal, the electric field may concentrate on the corner of the mask and discharge may occur, but discharge can be suppressed by making the opening circular. In addition, since the circular opening can be easily formed by machining, the manufacturing cost of the mask can be reduced.

  Various modifications can be made to the material of the mask 12. For example, at least a part of the mask can be formed of a resin such as a PPS resin. Since the resin has insulating properties, it is possible to suppress discharge during measurement and to facilitate molding. On the other hand, at least a part of the mask may be formed of metal. When at least a part of the mask is made of metal, sufficient heat resistance and rigidity can be ensured as compared with the case where the mask is made of resin. The material of the mask is arbitrary as long as conduction between the first probe 14 and the semiconductor device 30 can be prevented.

  Various modifications can be made to the configuration and material of the first insulating portion 12D of FIG. For example, the first insulating portion 12D may include an insulating sheet attached to the metal portion 12C and a soft sheet softer than the insulating sheet attached to the insulating sheet. The insulating sheet is, for example, PPS resin. By adopting such a laminated structure as the first insulating portion, it is possible to prevent energization and protect the probe tip. In addition, the first insulating portion is made of a material that is insulative and softer than the metal portion 12C (for example, a soft material such as polyimide), thereby preventing energization of the first probe and the probe tip without providing a laminated structure. Can be protected.

  The second insulating portion 12E also has a laminated structure of an insulating sheet in contact with the metal portion 12C and a soft sheet that is in contact with the insulating sheet and is softer than the insulating sheet, or is formed of a soft material such as polyimide. Damage to the device can be suppressed. These modifications can also be applied as appropriate to the measurement apparatus and the semiconductor device measurement method according to the following embodiments. Since the following embodiment has much in common with the first embodiment, the difference from the first embodiment will be mainly described.

Embodiment 2. FIG.
FIG. 8 is a partial cross-sectional view showing the measurement apparatus and the semiconductor device according to the second embodiment. There are a plurality of semiconductor devices 30 and 31 under the substrate 10. The number of semiconductor devices under the substrate 10 is not particularly limited as long as it is plural. A partition 50 is placed on the stage 32 in order to install the plurality of semiconductor devices 30 and 31 at predetermined locations. The semiconductor devices 30 and 31 are placed on the stage 32 where it is exposed from the partition 50. In the contact step, the second probe is brought into contact with the plurality of semiconductor devices 30 and 31. The measurement can be efficiently performed by sequentially measuring the plurality of semiconductor devices 30 and 31.

  As described above, the measurement jig according to the second embodiment needs to be formed long in the lateral direction so as to be able to contact a plurality of semiconductor devices, and thus is relatively large. On the other hand, when one semiconductor device 30 is provided under the substrate 10 as in the first embodiment, the size of the stage 32 and the substrate 10 can be reduced, so that the configuration of the measuring device can be simplified.

Embodiment 3 FIG.
FIG. 9 is a partial cross-sectional view showing the measurement apparatus and the semiconductor device according to the third embodiment. Below the substrate 10 are a plurality of stages 60, 62. The number of stages under the substrate 10 is not particularly limited as long as it is plural. By providing the partition 52 between the stages, the stage can be accurately placed at a predetermined location. At least one semiconductor device is mounted on one stage. Specifically, the semiconductor device 30 is placed on the stage 60, and the semiconductor device 31 is placed on the stage 62. In the contact step, the plurality of second probes fixed to the substrate 10 are brought into contact with the semiconductor devices 30 and 31 placed on the plurality of stages 60 and 62.

  In the case where a large number of semiconductor devices are vacuum-sucked on a large stage, the suction pressures for a plurality of semiconductor devices may not be made uniform because the suction pressure varies depending on the stage location. However, the suction pressure for the semiconductor device can be made uniform by providing a plurality of stages as in the third embodiment and sucking the semiconductor device for each stage. Moreover, since the damaged stage can be replaced individually, it can be expected to reduce the cost associated with the stage replacement.

Embodiment 4 FIG.
FIG. 10 is a partial cross-sectional view showing a measuring apparatus and a semiconductor device according to the fourth embodiment. The semiconductor device to be measured is a wafer on which a plurality of semiconductor devices 29, 30, 33, and 35 are formed. In the contact step, the second probe is brought into contact with the upper surface electrodes of the plurality of semiconductor devices 29, 30, 33, and 35 (a plurality of chips on the wafer). Thus, the measurement can be speeded up by bringing one measuring jig into contact with a plurality of semiconductor devices.

Embodiment 5. FIG.
FIG. 11 is a diagram illustrating the measurement apparatus and the semiconductor device 30 according to the fifth embodiment. The measurement apparatus according to the fifth embodiment includes a tray 100 that supports the semiconductor device 30 while exposing the upper and lower surfaces of the semiconductor device 30. Above the tray 100, there are a first substrate 11, a first probe 14 fixed to the first substrate 11, and a first probe 14 and second probes 16, 18 that can expand and contract in the direction of the tray 100. The first mask 13 is the same as the mask 12 of the first embodiment, and the first probe 14 is contracted as compared with a state in which the first probe 14 hits the tip of the first probe 14 and no force is applied to the first probe 14. Two openings for passing the probes 16 and 18 are provided.

  Below the tray 100, there are a second substrate 102, third probes 104 a and 104 g fixed to the second substrate 102, and extendable in the direction of the tray 100, and fourth probes 104 b, 104 c, 104 d, 104 e, and 104 f. . The third probes 104a and 104g and the fourth probes 104b, 104c, 104d, 104e, and 104f are electrically connected to the measurement unit 24. The first substrate 11 and the second substrate 102 can be moved to arbitrary positions by an arm controlled by a command from the measurement unit 24, for example.

  After the semiconductor device 30 is placed on the tray 100, the process proceeds to the contact process. In the contact step, the first substrate 11 and the second substrate 102 are moved in the direction indicated by the arrows in FIG. 11, and the first substrate 11 and the second substrate 102 are brought closer to the semiconductor device 30. When the contact process is finished, as shown in FIG. 12, the second probes 16, 18 come into contact with the upper surface electrodes 30a, 30b, and the fourth probes 104b, 104c, 104d, 104e, 104f come into contact with the lower surface electrode 30c. Since the third probes 104 a and 104 g are in contact with the lower surface of the tray 100, they are not in contact with the semiconductor device 30.

  When the stage is brought into contact with the lower surface electrode 30c, there is a problem that foreign matter is caught between the lower surface electrode 30c and the stage, and this foreign matter damages the semiconductor device 30 or decreases the measurement accuracy. However, as in the fifth embodiment of the present invention, by bringing the probe into contact with the lower surface electrode 30c, it is possible to prevent harmful effects caused by foreign matter.

  The measurement jigs below and above the tray 100 are exactly the same for the substrate and the probe. Since both measurement jigs have a known configuration (except for the mask), they are suitable for cost reduction.

Embodiment 6 FIG.
FIG. 13 is a diagram illustrating a measurement apparatus and a semiconductor device according to the sixth embodiment. The measuring apparatus according to the sixth embodiment includes a first mask 13 and a second mask 122. The first mask 13 has an opening through which the first probe 14 is contracted and the second probes 16 and 18 are passed compared to a state where the first probe 14 is in contact with the tip of the first probe 14 and no force is applied to the first probe 14. The second mask 122 has an opening through which the fourth probes 126 and 128 are passed by contracting the third probe 124 as compared to a state in which no force is applied to the third probe 124 at the tip of the third probe 124.

  FIG. 14 is a diagram illustrating the measurement apparatus and the semiconductor device after the contact process. The fourth probes 126 and 128 are directly below the second probes 16 and 18. Specifically, in the semiconductor device, the portion pushed downward by the second probe 16 is pushed upward by the fourth probe 126, and the portion pushed downward by the second probe 18 is pushed upward by the fourth probe 128. It is. Therefore, the load applied to the semiconductor device becomes uniform, and the semiconductor device can be prevented from cracking.

  When all the probes fixed to the first substrate 11 are used, the first mask 13 may be omitted. When all the probes fixed to the second substrate 120 are used, the second mask 122 may be omitted.

Embodiment 7 FIG.
FIG. 15 is a diagram illustrating a semiconductor device measurement method according to the seventh embodiment. In this embodiment, the mask 130 is fixed to the stage 32 after the semiconductor device 30 is placed on the stage 32. In the contact process, the first probe 14 contacts the mask 130 and contracts in the longitudinal direction. On the other hand, the second probes 16 and 18 pass through the openings of the mask 130 and come into contact with the upper surface electrodes 30a and 30b.

  When the mask 12 is fixed to the substrate 10 as described in the first embodiment or the like, the outer shape of the measurement jig becomes larger than when the mask 12 is not fixed. For this reason, it is conceivable that the moving measuring jig collides with an existing part, or the arm becomes difficult to grasp the measuring jig. However, by fixing the mask 130 to the stage 32 as in the seventh embodiment of the present invention, the above-described adverse effects can be avoided.

  You may combine suitably the characteristic of the measuring device concerning each embodiment described so far, and the measuring method of a semiconductor device.

  DESCRIPTION OF SYMBOLS 10 Board | substrate, 12 Mask, 12A Connection part, 12B Contact part, 12C Metal part, 12D 1st insulation part, 12E 2nd insulation part, 12a Opening part, 13 1st mask, 14 1st probe, 16, 18 2nd probe 30 Semiconductor device, 30a, 30b Upper surface electrode, 30c Lower surface electrode

Claims (25)

A substrate,
A first probe fixed to the substrate and capable of extending and contracting in the longitudinal direction;
A second probe fixed to the substrate and extendable in the longitudinal direction;
A mask having an opening through which the first probe is contracted and passed through the second probe as compared to a state where no force is applied to the first probe at the tip of the first probe. Measuring device.   The measurement apparatus according to claim 1, further comprising a measurement unit electrically connected to the first probe and the second probe. A stage at a position facing the second probe extending out of the mask from the opening,
The measuring apparatus according to claim 1, wherein the first probe and the second probe are configured to expand and contract in the direction of the stage. The mask includes a metal part and a first insulating part in contact with the metal part,
The measuring apparatus according to claim 1, wherein a tip of the first probe is in contact with the first insulating portion.   The measuring apparatus according to claim 4, wherein a material of the first insulating portion is polyimide.   The said 1st insulating part was equipped with the insulating sheet affixed on the said metal part, and the soft sheet softer than the said insulating sheet affixed on the said insulating sheet, The Claim 4 characterized by the above-mentioned. Measuring device.   The measuring apparatus according to claim 4, wherein the first insulating part is made of a material softer than the metal part while having insulating properties.   The measuring apparatus according to claim 3, wherein the mask includes a second insulating portion formed on a surface of the mask facing the stage.   The measuring apparatus according to claim 8, wherein the second insulating portion is polyimide.   The measuring apparatus according to claim 8, wherein the second insulating portion has a laminated structure of an insulating sheet and a soft sheet softer than the insulating sheet. A plurality of the stages,
The measuring apparatus according to claim 3, wherein there are a plurality of the stages immediately below the substrate.   The measurement apparatus according to claim 1, wherein at least a part of the mask is made of metal, and the opening is circular in a plan view.   The measuring apparatus according to claim 1, wherein at least a part of the mask is formed of a resin.   The measurement apparatus according to claim 1, wherein the mask is fixed to the substrate.   The measuring apparatus according to claim 3, wherein the mask is fixed to the stage. A tray for supporting the semiconductor device while exposing an upper surface and a lower surface of the semiconductor device;
A first substrate above the tray;
A first probe fixed to the first substrate and extendable in the direction of the tray;
A second probe fixed to the first substrate and extendable in the direction of the tray;
A second substrate below the tray;
A third probe fixed to the second substrate and extendable in the direction of the tray;
A measurement apparatus comprising: a fourth probe fixed to the second substrate and capable of extending and contracting in the direction of the tray.   A first mask having an opening through which the first probe is contracted and passed through the second probe compared to a state where no force is applied to the first probe at the tip of the first probe is provided. The measurement apparatus according to claim 16.   The second probe is provided with a second mask having an opening through which the fourth probe is contracted compared to a state where no force is applied to the third probe at the tip of the third probe and the fourth probe is passed therethrough. The measurement apparatus according to claim 16. A first mask having an opening through which the first probe is contracted compared to a state in which no force is applied to the first probe at the tip of the first probe, and the second probe is passed through;
A second mask having an opening through which the fourth probe is contracted compared to a state in which no force is applied to the third probe at the tip of the third probe, and the fourth probe is passed through;
The measurement apparatus according to claim 16, wherein the fourth probe is directly below the second probe. Placing a semiconductor device having an upper surface electrode on the stage;
A first probe fixed to the substrate and extendable in the direction of the stage; a second probe fixed to the substrate and extendable in the direction of the stage; and the first probe hitting a tip of the first probe Compared to a state in which no force is applied to one probe, the first probe is contracted, and a measurement jig having a mask having an opening through which the second probe passes is brought close to the upper surface electrode, and the second probe Contacting the probe with the upper surface electrode; and
A method of measuring a semiconductor device, comprising: passing an electric current through the second probe to measure an electrical characteristic of the semiconductor device.   21. The method for measuring a semiconductor device according to claim 20, wherein the opening is smaller than the upper surface electrode in plan view.   21. The method of measuring a semiconductor device according to claim 20, wherein there is one semiconductor device under the substrate.   The method for measuring a semiconductor device according to claim 20, wherein a plurality of the semiconductor devices are provided under the substrate. There are a plurality of the stages under the substrate,
A plurality of the second probes are fixed to the substrate,
21. The method of measuring a semiconductor device according to claim 20, wherein, in the contacting step, the second probe is brought into contact with the semiconductor device placed on a plurality of the stages. The semiconductor device is a wafer;
A plurality of the second probes are fixed to the substrate,
21. The method of measuring a semiconductor device according to claim 20, wherein, in the contacting step, the second probe is brought into contact with upper surface electrodes of a plurality of chips of the wafer.

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