JP2016538761A - 包絡線追跡システムのための包絡線経路内の信号の減らされた帯域幅 - Google Patents

包絡線追跡システムのための包絡線経路内の信号の減らされた帯域幅 Download PDF

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JP2016538761A
JP2016538761A JP2016523993A JP2016523993A JP2016538761A JP 2016538761 A JP2016538761 A JP 2016538761A JP 2016523993 A JP2016523993 A JP 2016523993A JP 2016523993 A JP2016523993 A JP 2016523993A JP 2016538761 A JP2016538761 A JP 2016538761A
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Prior art keywords
envelope
input
power amplifier
signal
path
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Ceased
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JP2016523993A
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Japanese (ja)
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JP2016538761A5 (https=
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ジェラード・ウィンペニー
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スナップトラック・インコーポレーテッド
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Publication of JP2016538761A5 publication Critical patent/JP2016538761A5/ja
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216Continuous control
    • H03F1/0222Continuous control by using a signal derived from the input signal
    • H03F1/0227Continuous control by using a signal derived from the input signal using supply converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216Continuous control
    • H03F1/0222Continuous control by using a signal derived from the input signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3294Acting on the real and imaginary components of the input signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/005Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements using switched capacitors, e.g. dynamic amplifiers; using switched capacitors as resistors in differential amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/102A non-specified detector of a signal envelope being used in an amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/111Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2201/00Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
    • H03F2201/32Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
    • H03F2201/3206Multiple channels are combined and amplified by only one amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21181Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the supply current of a power amplifier being continuously controlled, e.g. by controlling current sources or resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21184Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the supply current of a power amplifier being continuously measured, e.g. by a resistor, a current mirror, to produce a controlling signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21193Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the supply voltage of a power amplifier being continuously controlled, e.g. by an active potentiometer

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
JP2016523993A 2013-10-21 2014-10-20 包絡線追跡システムのための包絡線経路内の信号の減らされた帯域幅 Ceased JP2016538761A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1318524.4 2013-10-21
GB1318524.4A GB2519361B (en) 2013-10-21 2013-10-21 Reduced bandwidth of signal in an envelope path for envelope tracking system
PCT/EP2014/072447 WO2015059096A1 (en) 2013-10-21 2014-10-20 Reduced bandwidth of signal in an envelope path for envelope tracking system

Publications (2)

Publication Number Publication Date
JP2016538761A true JP2016538761A (ja) 2016-12-08
JP2016538761A5 JP2016538761A5 (https=) 2017-11-16

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JP2016523993A Ceased JP2016538761A (ja) 2013-10-21 2014-10-20 包絡線追跡システムのための包絡線経路内の信号の減らされた帯域幅

Country Status (7)

Country Link
US (1) US9350302B2 (https=)
EP (1) EP3061184B1 (https=)
JP (1) JP2016538761A (https=)
KR (1) KR20160074551A (https=)
CN (1) CN105684300A (https=)
GB (1) GB2519361B (https=)
WO (1) WO2015059096A1 (https=)

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JP2022502885A (ja) * 2018-04-25 2022-01-11 ウパテック クラスg高周波パワー・アンプ向けのベースバンド線形化のシステム及び方法

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EP2974005B1 (en) 2013-03-14 2018-06-20 Quantance, Inc. Et system with adjustment for noise
WO2014151777A1 (en) 2013-03-15 2014-09-25 Quantance, Inc. Envelope tracking system with internal power amplifier characterization
KR20160027302A (ko) * 2014-08-28 2016-03-10 한국전자통신연구원 반송파 집성과 포락선 추적을 지원하는 rf 송신기
US10097137B2 (en) * 2014-08-29 2018-10-09 Kabushiki Kaisha Toshiba Timing alignment sensitivity for envelope tracking
JP2016082549A (ja) * 2014-10-22 2016-05-16 富士通株式会社 ピーク抑圧装置
US9391649B2 (en) * 2014-11-17 2016-07-12 Microsoft Technology Licensing, Llc Envelope shaping in envelope tracking power amplification
US9590668B1 (en) 2015-11-30 2017-03-07 NanoSemi Technologies Digital compensator
US10084630B2 (en) * 2015-12-29 2018-09-25 Blue Danube Systems, Inc. Multi-beam crest factor reduction
US10812166B2 (en) 2016-10-07 2020-10-20 Nanosemi, Inc. Beam steering digital predistortion
US11057004B2 (en) 2017-02-25 2021-07-06 Nanosemi, Inc. Multiband digital predistorter
CN108540098B (zh) * 2017-03-06 2021-04-06 中兴通讯股份有限公司 一种包络跟踪方法和移动终端
US10141961B1 (en) 2017-05-18 2018-11-27 Nanosemi, Inc. Passive intermodulation cancellation
KR102454810B1 (ko) * 2017-05-26 2022-10-13 삼성전기주식회사 옵셋 제거 기능을 갖는 엔벨로프-추적 전류 바이어스 회로
US10931318B2 (en) * 2017-06-09 2021-02-23 Nanosemi, Inc. Subsampled linearization system
US11115067B2 (en) 2017-06-09 2021-09-07 Nanosemi, Inc. Multi-band linearization system
US10581470B2 (en) 2017-06-09 2020-03-03 Nanosemi, Inc. Linearization system
US11323188B2 (en) 2017-07-12 2022-05-03 Nanosemi, Inc. Monitoring systems and methods for radios implemented with digital predistortion
US11303251B2 (en) 2017-10-02 2022-04-12 Nanosemi, Inc. Digital predistortion adjustment based on determination of load condition characteristics
JP2021523629A (ja) 2018-05-11 2021-09-02 ナノセミ, インク.Nanosemi, Inc. 非線形システム用デジタル補償器
US10644657B1 (en) 2018-05-11 2020-05-05 Nanosemi, Inc. Multi-band digital compensator for a non-linear system
US10931238B2 (en) * 2018-05-25 2021-02-23 Nanosemi, Inc. Linearization with envelope tracking or average power tracking
EP3804127A1 (en) 2018-05-25 2021-04-14 NanoSemi, Inc. Digital predistortion in varying operating conditions
US11863210B2 (en) 2018-05-25 2024-01-02 Nanosemi, Inc. Linearization with level tracking
EP3804249A4 (en) 2018-05-29 2022-01-26 Telefonaktiebolaget LM Ericsson (publ) METHOD AND APPARATUS FOR SHAPING MULTI-CARRIER SIGNAL ENVELOPE IN ENVELOPE TRACKING TRANSMISSION
US10873301B2 (en) * 2019-04-08 2020-12-22 Qorvo Us, Inc. Dual-input voltage memory digital pre-distortion circuit and related envelope tracking apparatus
WO2020209421A1 (ko) * 2019-04-11 2020-10-15 엘지전자 주식회사 엔벨로프 트래킹을 지원하는 전자기기 및 그 전자기기의 제어 방법
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Also Published As

Publication number Publication date
EP3061184A1 (en) 2016-08-31
GB201318524D0 (en) 2013-12-04
GB2519361B (en) 2015-09-16
KR20160074551A (ko) 2016-06-28
WO2015059096A1 (en) 2015-04-30
US9350302B2 (en) 2016-05-24
GB2519361A (en) 2015-04-22
EP3061184B1 (en) 2018-02-14
US20150123735A1 (en) 2015-05-07
CN105684300A (zh) 2016-06-15

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