JP2016530699A - プラズマ処理システムのためのアンテナアレイ構成 - Google Patents

プラズマ処理システムのためのアンテナアレイ構成 Download PDF

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Publication number
JP2016530699A
JP2016530699A JP2016516652A JP2016516652A JP2016530699A JP 2016530699 A JP2016530699 A JP 2016530699A JP 2016516652 A JP2016516652 A JP 2016516652A JP 2016516652 A JP2016516652 A JP 2016516652A JP 2016530699 A JP2016530699 A JP 2016530699A
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JP
Japan
Prior art keywords
antenna array
loop antenna
deposition system
closed
closed loop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016516652A
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English (en)
Japanese (ja)
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JP2016530699A5 (zh
Inventor
ジョン エム． ホワイト，
ジョン エム． ホワイト，
ジョゼフ クデラ，
ジョゼフ クデラ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2016530699A publication Critical patent/JP2016530699A/ja
Publication of JP2016530699A5 publication Critical patent/JP2016530699A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2016516652A 2013-05-31 2014-04-15 プラズマ処理システムのためのアンテナアレイ構成 Pending JP2016530699A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361829476P 2013-05-31 2013-05-31
US61/829,476 2013-05-31
PCT/US2014/034144 WO2014193553A1 (en) 2013-05-31 2014-04-15 Antenna array configurations for plasma processing systems

Publications (2)

Publication Number Publication Date
JP2016530699A true JP2016530699A (ja) 2016-09-29
JP2016530699A5 JP2016530699A5 (zh) 2017-06-01

Family

ID=51989299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016516652A Pending JP2016530699A (ja) 2013-05-31 2014-04-15 プラズマ処理システムのためのアンテナアレイ構成

Country Status (4)

Country Link
JP (1) JP2016530699A (zh)
KR (1) KR20160016917A (zh)
CN (1) CN105340063A (zh)
WO (1) WO2014193553A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10682059B1 (en) * 2018-12-28 2020-06-16 Endra Life Sciences Inc. Radio frequency applicator and thermoacoustic imaging system employing the same

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112010U (zh) * 1989-02-27 1990-09-07
JPH04290428A (ja) * 1990-12-03 1992-10-15 Applied Materials Inc Ｕｈｆ／ｖｈｆ共振アンテナ供給源を用いたプラズマリアクタ
JPH051383A (ja) * 1991-06-25 1993-01-08 Canon Inc 大面積マイクロ波プラズマｃｖｄ装置
JPH06251896A (ja) * 1992-12-28 1994-09-09 Hitachi Ltd プラズマ処理方法及び装置
JPH08277472A (ja) * 1995-04-04 1996-10-22 Canon Inc 堆積膜の製造装置およびその製造方法
JPH11243062A (ja) * 1997-12-10 1999-09-07 Canon Inc プラズマｃｖｄ方法及びプラズマｃｖｄ装置
JP2000345351A (ja) * 1999-05-31 2000-12-12 Anelva Corp プラズマｃｖｄ装置
JP2001035697A (ja) * 1999-07-27 2001-02-09 Japan Science & Technology Corp プラズマ発生装置
JP2011515030A (ja) * 2008-01-30 2011-05-12 アプライド マテリアルズ インコーポレイテッド インピーダンス遷移部との統合マイクロ波導波管

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
KR200253559Y1 (ko) * 2001-07-30 2001-11-22 주식회사 플라즈마트 회전방향으로 균일한 플라즈마 밀도를 발생시키는유도결합형 플라즈마 발생장치의 안테나구조
KR100523851B1 (ko) * 2003-05-07 2005-10-27 학교법인 성균관대학 대면적처리용 내장형 선형안테나를 구비하는 유도결합플라즈마 처리장치
EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
JP4471589B2 (ja) * 2003-05-26 2010-06-02 三井造船株式会社 プラズマ発生用アンテナ装置及びプラズマ処理装置
JP4324205B2 (ja) * 2007-03-30 2009-09-02 三井造船株式会社 プラズマ生成装置およびプラズマ成膜装置
TW200845833A (en) * 2007-05-01 2008-11-16 Delta Electronics Inc Plasma generating device
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20120279943A1 (en) * 2011-05-03 2012-11-08 Applied Materials, Inc. Processing chamber with cooled gas delivery line

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112010U (zh) * 1989-02-27 1990-09-07
JPH04290428A (ja) * 1990-12-03 1992-10-15 Applied Materials Inc Ｕｈｆ／ｖｈｆ共振アンテナ供給源を用いたプラズマリアクタ
JPH051383A (ja) * 1991-06-25 1993-01-08 Canon Inc 大面積マイクロ波プラズマｃｖｄ装置
JPH06251896A (ja) * 1992-12-28 1994-09-09 Hitachi Ltd プラズマ処理方法及び装置
JPH08277472A (ja) * 1995-04-04 1996-10-22 Canon Inc 堆積膜の製造装置およびその製造方法
JPH11243062A (ja) * 1997-12-10 1999-09-07 Canon Inc プラズマｃｖｄ方法及びプラズマｃｖｄ装置
JP2000345351A (ja) * 1999-05-31 2000-12-12 Anelva Corp プラズマｃｖｄ装置
JP2001035697A (ja) * 1999-07-27 2001-02-09 Japan Science & Technology Corp プラズマ発生装置
JP2011515030A (ja) * 2008-01-30 2011-05-12 アプライド マテリアルズ インコーポレイテッド インピーダンス遷移部との統合マイクロ波導波管

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
伊藤 憲和, 外5名: "新型電極を用いたVHF-PECVD法によるa-Si:Hの大面積製膜", 第６１回応用物理学会学術講演会講演予稿集, vol. 5a-R-1, JPN6018034860, September 2000 (2000-09-01), pages 841, ISSN: 0003873803 *

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Publication number Publication date
CN105340063A (zh) 2016-02-17
WO2014193553A1 (en) 2014-12-04
KR20160016917A (ko) 2016-02-15

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