JP2016526859A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016526859A5 JP2016526859A5 JP2016525826A JP2016525826A JP2016526859A5 JP 2016526859 A5 JP2016526859 A5 JP 2016526859A5 JP 2016525826 A JP2016525826 A JP 2016525826A JP 2016525826 A JP2016525826 A JP 2016525826A JP 2016526859 A5 JP2016526859 A5 JP 2016526859A5
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- oxide semiconductor
- type metal
- semiconductor transistor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims 77
- 150000004706 metal oxides Chemical class 0.000 claims 77
- 239000004065 semiconductor Substances 0.000 claims 76
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/941,419 | 2013-07-12 | ||
| US13/941,419 US9245886B2 (en) | 2013-07-12 | 2013-07-12 | Switch supporting voltages greater than supply |
| PCT/US2014/046426 WO2015006741A1 (en) | 2013-07-12 | 2014-07-11 | Switch supporting voltages greater than supply |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016526859A JP2016526859A (ja) | 2016-09-05 |
| JP2016526859A5 true JP2016526859A5 (enExample) | 2017-08-17 |
| JP6239106B2 JP6239106B2 (ja) | 2017-11-29 |
Family
ID=51230240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016525826A Active JP6239106B2 (ja) | 2013-07-12 | 2014-07-11 | 電源電圧よりも大きい電圧を支持するスイッチ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9245886B2 (enExample) |
| EP (1) | EP3020132B1 (enExample) |
| JP (1) | JP6239106B2 (enExample) |
| KR (1) | KR102190347B1 (enExample) |
| CN (1) | CN105359412B (enExample) |
| WO (1) | WO2015006741A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10236873B2 (en) | 2015-03-17 | 2019-03-19 | Xilinx, Inc. | Analog switch having reduced gate-induced drain leakage |
| US10545053B2 (en) * | 2017-06-07 | 2020-01-28 | Xilinx, Inc. | Dynamic element matching in an integrated circuit |
| US10608630B1 (en) | 2018-06-26 | 2020-03-31 | Xilinx, Inc. | Method of increased supply rejection on single-ended complementary metal-oxide-semiconductor (CMOS) switches |
| JP7329411B2 (ja) * | 2019-10-18 | 2023-08-18 | エイブリック株式会社 | アナログスイッチ |
| US11190178B1 (en) * | 2020-10-28 | 2021-11-30 | Xilinx, Inc. | Gate induced drain leakage robust bootstrapped switch |
| WO2025072448A2 (en) * | 2023-09-28 | 2025-04-03 | Quantinuum Llc | High-voltage glitch-suppressed semiconductor switch for quantum object confinement apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927622A (ja) * | 1982-08-04 | 1984-02-14 | Sanyo Electric Co Ltd | アナログスイツチ回路 |
| JPH09167950A (ja) * | 1995-12-18 | 1997-06-24 | Nissan Motor Co Ltd | アナログスイッチ |
| GB2327544B (en) * | 1997-07-16 | 2001-02-07 | Ericsson Telefon Ab L M | Electronic analogue switch |
| JP5123724B2 (ja) * | 2008-04-25 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | アナログマルチプレクサ及びその選択信号生成方法 |
| US8289066B2 (en) | 2009-12-30 | 2012-10-16 | Stmicroelectronics Asia Pacific Pte Ltd. | Gate control circuit for high bandwidth switch design |
| US8519771B1 (en) * | 2010-12-22 | 2013-08-27 | Xilinx, Inc. | Methods and apparatus for receiving high and low voltage signals using a low supply voltage technology |
-
2013
- 2013-07-12 US US13/941,419 patent/US9245886B2/en active Active
-
2014
- 2014-07-11 JP JP2016525826A patent/JP6239106B2/ja active Active
- 2014-07-11 EP EP14744738.7A patent/EP3020132B1/en active Active
- 2014-07-11 WO PCT/US2014/046426 patent/WO2015006741A1/en not_active Ceased
- 2014-07-11 CN CN201480038555.3A patent/CN105359412B/zh active Active
- 2014-07-11 KR KR1020167003527A patent/KR102190347B1/ko active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016526859A5 (enExample) | ||
| CN103701443B (zh) | 提供过压、欠压和关机保护的低压模拟开关电路和相关方法和系统 | |
| JP2012257215A5 (enExample) | ||
| CN105874598A (zh) | 用于控制耗尽型晶体管的方法和电路 | |
| JP2015188209A5 (enExample) | ||
| JP2014180213A5 (enExample) | ||
| WO2016137685A3 (en) | Read-assist circuits for memory bit cells employing a p-type field-effect transistor (pfet) read port(s), and related memory systems and methods | |
| CN104137418B (zh) | 开关电路 | |
| JP2017076789A5 (enExample) | ||
| GB2544929A8 (en) | Low-temperature polycrystalline silicon semiconductor thin-film transistor-based GOA circuit | |
| GB2494311A (en) | Nanowire circuits in matched devices | |
| US10591532B2 (en) | Semiconductor integrated circuit | |
| JP2017513133A5 (enExample) | ||
| WO2017136105A1 (en) | Input/output (i/o) driver implementing dynamic gate biasing of buffer transistors | |
| WO2009018285A3 (en) | Voltage tolerant floating n-well circuit | |
| WO2016137681A3 (en) | P-type field-effect transistor (pfet)-based sense amplifiers for reading pfet pass-gate memory bit cells, and related memory systems and methods | |
| JP2016533662A5 (enExample) | ||
| US9768768B2 (en) | Failsafe interface circuit and related method | |
| JP6239106B2 (ja) | 電源電圧よりも大きい電圧を支持するスイッチ | |
| TWI415388B (zh) | 電晶體免於高電壓應力並可操作在低電壓之電位轉換電路 | |
| EP3311178B1 (en) | Voltage monitor circuit | |
| US10200038B2 (en) | Bootstrapping circuit and unipolar logic circuits using the same | |
| US10063233B2 (en) | Method of operating a pull-up circuit | |
| JP2016535487A5 (enExample) | ||
| US20130293991A1 (en) | Current leakage in rc esd clamps |