JP6239106B2 - 電源電圧よりも大きい電圧を支持するスイッチ - Google Patents

電源電圧よりも大きい電圧を支持するスイッチ Download PDF

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Publication number
JP6239106B2
JP6239106B2 JP2016525826A JP2016525826A JP6239106B2 JP 6239106 B2 JP6239106 B2 JP 6239106B2 JP 2016525826 A JP2016525826 A JP 2016525826A JP 2016525826 A JP2016525826 A JP 2016525826A JP 6239106 B2 JP6239106 B2 JP 6239106B2
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Japan
Prior art keywords
metal oxide
oxide semiconductor
type metal
semiconductor transistor
transistor
Prior art date
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JP2016525826A
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English (en)
Japanese (ja)
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JP2016526859A5 (enExample
JP2016526859A (ja
Inventor
ジェニングス，ジョン・ケイ
シカル，イオヌット・シィ
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Xilinx Inc
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Xilinx Inc
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Publication of JP2016526859A5 publication Critical patent/JP2016526859A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP2016525826A 2013-07-12 2014-07-11 電源電圧よりも大きい電圧を支持するスイッチ Active JP6239106B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/941,419 2013-07-12
US13/941,419 US9245886B2 (en) 2013-07-12 2013-07-12 Switch supporting voltages greater than supply
PCT/US2014/046426 WO2015006741A1 (en) 2013-07-12 2014-07-11 Switch supporting voltages greater than supply

Publications (3)

Publication Number Publication Date
JP2016526859A JP2016526859A (ja) 2016-09-05
JP2016526859A5 JP2016526859A5 (enExample) 2017-08-17
JP6239106B2 true JP6239106B2 (ja) 2017-11-29

Family

ID=51230240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016525826A Active JP6239106B2 (ja) 2013-07-12 2014-07-11 電源電圧よりも大きい電圧を支持するスイッチ

Country Status (6)

Country Link
US (1) US9245886B2 (enExample)
EP (1) EP3020132B1 (enExample)
JP (1) JP6239106B2 (enExample)
KR (1) KR102190347B1 (enExample)
CN (1) CN105359412B (enExample)
WO (1) WO2015006741A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10236873B2 (en) 2015-03-17 2019-03-19 Xilinx, Inc. Analog switch having reduced gate-induced drain leakage
US10545053B2 (en) * 2017-06-07 2020-01-28 Xilinx, Inc. Dynamic element matching in an integrated circuit
US10608630B1 (en) 2018-06-26 2020-03-31 Xilinx, Inc. Method of increased supply rejection on single-ended complementary metal-oxide-semiconductor (CMOS) switches
JP7329411B2 (ja) * 2019-10-18 2023-08-18 エイブリック株式会社 アナログスイッチ
US11190178B1 (en) * 2020-10-28 2021-11-30 Xilinx, Inc. Gate induced drain leakage robust bootstrapped switch
WO2025072448A2 (en) * 2023-09-28 2025-04-03 Quantinuum Llc High-voltage glitch-suppressed semiconductor switch for quantum object confinement apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927622A (ja) * 1982-08-04 1984-02-14 Sanyo Electric Co Ltd アナログスイツチ回路
JPH09167950A (ja) * 1995-12-18 1997-06-24 Nissan Motor Co Ltd アナログスイッチ
GB2327544B (en) * 1997-07-16 2001-02-07 Ericsson Telefon Ab L M Electronic analogue switch
JP5123724B2 (ja) * 2008-04-25 2013-01-23 ルネサスエレクトロニクス株式会社 アナログマルチプレクサ及びその選択信号生成方法
US8289066B2 (en) 2009-12-30 2012-10-16 Stmicroelectronics Asia Pacific Pte Ltd. Gate control circuit for high bandwidth switch design
US8519771B1 (en) * 2010-12-22 2013-08-27 Xilinx, Inc. Methods and apparatus for receiving high and low voltage signals using a low supply voltage technology

Also Published As

Publication number Publication date
WO2015006741A1 (en) 2015-01-15
EP3020132A1 (en) 2016-05-18
KR102190347B1 (ko) 2020-12-11
US9245886B2 (en) 2016-01-26
CN105359412B (zh) 2017-09-29
US20150014779A1 (en) 2015-01-15
KR20160032158A (ko) 2016-03-23
CN105359412A (zh) 2016-02-24
JP2016526859A (ja) 2016-09-05
EP3020132B1 (en) 2019-03-27

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