CN105359412B - 支持高于电源的电压的开关 - Google Patents

支持高于电源的电压的开关 Download PDF

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Publication number
CN105359412B
CN105359412B CN201480038555.3A CN201480038555A CN105359412B CN 105359412 B CN105359412 B CN 105359412B CN 201480038555 A CN201480038555 A CN 201480038555A CN 105359412 B CN105359412 B CN 105359412B
Authority
CN
China
Prior art keywords
type metal
transistor
semiconductor transistor
oxide
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480038555.3A
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English (en)
Chinese (zh)
Other versions
CN105359412A (zh
Inventor
J·K·詹宁斯
I·C·西卡尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xilinx Inc
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Xilinx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xilinx Inc filed Critical Xilinx Inc
Publication of CN105359412A publication Critical patent/CN105359412A/zh
Application granted granted Critical
Publication of CN105359412B publication Critical patent/CN105359412B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
CN201480038555.3A 2013-07-12 2014-07-11 支持高于电源的电压的开关 Active CN105359412B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/941,419 2013-07-12
US13/941,419 US9245886B2 (en) 2013-07-12 2013-07-12 Switch supporting voltages greater than supply
PCT/US2014/046426 WO2015006741A1 (en) 2013-07-12 2014-07-11 Switch supporting voltages greater than supply

Publications (2)

Publication Number Publication Date
CN105359412A CN105359412A (zh) 2016-02-24
CN105359412B true CN105359412B (zh) 2017-09-29

Family

ID=51230240

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480038555.3A Active CN105359412B (zh) 2013-07-12 2014-07-11 支持高于电源的电压的开关

Country Status (6)

Country Link
US (1) US9245886B2 (enExample)
EP (1) EP3020132B1 (enExample)
JP (1) JP6239106B2 (enExample)
KR (1) KR102190347B1 (enExample)
CN (1) CN105359412B (enExample)
WO (1) WO2015006741A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10236873B2 (en) * 2015-03-17 2019-03-19 Xilinx, Inc. Analog switch having reduced gate-induced drain leakage
US10545053B2 (en) * 2017-06-07 2020-01-28 Xilinx, Inc. Dynamic element matching in an integrated circuit
US10608630B1 (en) 2018-06-26 2020-03-31 Xilinx, Inc. Method of increased supply rejection on single-ended complementary metal-oxide-semiconductor (CMOS) switches
JP7329411B2 (ja) 2019-10-18 2023-08-18 エイブリック株式会社 アナログスイッチ
US11190178B1 (en) * 2020-10-28 2021-11-30 Xilinx, Inc. Gate induced drain leakage robust bootstrapped switch
WO2025072448A2 (en) * 2023-09-28 2025-04-03 Quantinuum Llc High-voltage glitch-suppressed semiconductor switch for quantum object confinement apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101567681A (zh) * 2008-04-25 2009-10-28 恩益禧电子股份有限公司 模拟多路复用器及其选择信号生成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927622A (ja) * 1982-08-04 1984-02-14 Sanyo Electric Co Ltd アナログスイツチ回路
JPH09167950A (ja) * 1995-12-18 1997-06-24 Nissan Motor Co Ltd アナログスイッチ
GB2327544B (en) * 1997-07-16 2001-02-07 Ericsson Telefon Ab L M Electronic analogue switch
US8289066B2 (en) 2009-12-30 2012-10-16 Stmicroelectronics Asia Pacific Pte Ltd. Gate control circuit for high bandwidth switch design
US8519771B1 (en) * 2010-12-22 2013-08-27 Xilinx, Inc. Methods and apparatus for receiving high and low voltage signals using a low supply voltage technology

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101567681A (zh) * 2008-04-25 2009-10-28 恩益禧电子股份有限公司 模拟多路复用器及其选择信号生成方法

Also Published As

Publication number Publication date
WO2015006741A1 (en) 2015-01-15
EP3020132A1 (en) 2016-05-18
US20150014779A1 (en) 2015-01-15
JP2016526859A (ja) 2016-09-05
CN105359412A (zh) 2016-02-24
EP3020132B1 (en) 2019-03-27
US9245886B2 (en) 2016-01-26
KR20160032158A (ko) 2016-03-23
KR102190347B1 (ko) 2020-12-11
JP6239106B2 (ja) 2017-11-29

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