JP2016513331A - メモリデバイスの電力管理 - Google Patents
メモリデバイスの電力管理 Download PDFInfo
- Publication number
- JP2016513331A JP2016513331A JP2015559237A JP2015559237A JP2016513331A JP 2016513331 A JP2016513331 A JP 2016513331A JP 2015559237 A JP2015559237 A JP 2015559237A JP 2015559237 A JP2015559237 A JP 2015559237A JP 2016513331 A JP2016513331 A JP 2016513331A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- bias voltage
- power management
- time interval
- clock signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/08—Control thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/065—Sense amplifier drivers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2227—Standby or low power modes
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Amplifiers (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Power Sources (AREA)
- Manipulation Of Pulses (AREA)
Abstract
Description
Claims (16)
- メモリデバイスにおいて使用するための電力管理回路であって、
クロック信号を生成するためのシステムデバイスクロックと、
時間間隔を識別するためのタイミング回路と、
前記クロック信号を受信し、前記時間間隔内で前記クロック信号のパルスをカウントするための第1の回路と、
前記カウンタ回路の出力に応じて検知増幅器のバイアス電圧を変更するための第2の回路と、を備える、電力管理回路。 - 前記タイミング回路が前記時間間隔を変えるように設定可能である、請求項1に記載の電力管理回路。
- 前記第1の回路がカウンタを備える、請求項1に記載の電力管理回路。
- 前記第1の回路が複数のANDゲートを更に備える、請求項3に記載の電力管理回路。
- 前記第1の回路が複数のラッチを更に備える、請求項4に記載の電力管理回路。
- 前記第2の回路がバイアス電圧変調器を備える、請求項1に記載の電力管理回路。
- 前記バイアス電圧変調器が検知増幅器に接続される、請求項6に記載の電力管理回路。
- 前記バイアス電圧変調器が、前記バイアス電圧変調器に対する1つ以上の入力の変化に応じてバイアス電圧を変更する、請求項6に記載の電力管理回路。
- メモリデバイスのための電力管理方法であって、
システムデバイスクロックによってクロック信号を生成する工程と、
タイミング回路によって時間間隔を識別する工程と、
第1の回路によって前記クロック信号を受信し、前記時間間隔内で前記クロック信号のパルスをカウントする工程と、
第2の回路によって前記カウンタ回路の出力に応じて検知増幅器の前記バイアス電圧を変更する工程と、を含む、方法。 - 前記タイミング回路が前記時間間隔を変えるように設定可能である、請求項9に記載の方法。
- 前記第1の回路がカウンタを備える、請求項9に記載の方法。
- 前記第1の回路が複数のANDゲートを更に備える、請求項11に記載の方法。
- 前記第1の回路が複数のラッチを更に備える、請求項12に記載の方法。
- 前記第2の回路がバイアス電圧変調器を備える、請求項9に記載の方法。
- 前記バイアス電圧変調器が検知増幅器に接続される、請求項14に記載の方法。
- 前記バイアス電圧変調器が、前記バイアス電圧変調器に対する1つ以上の入力の変化に応じてバイアス電圧を変更する、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/830,246 | 2013-03-14 | ||
US13/830,246 US9910473B2 (en) | 2013-03-14 | 2013-03-14 | Power management for a memory device |
PCT/US2014/011722 WO2014143398A1 (en) | 2013-03-14 | 2014-01-15 | Power management for a memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2016513331A true JP2016513331A (ja) | 2016-05-12 |
Family
ID=50031615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015559237A Pending JP2016513331A (ja) | 2013-03-14 | 2014-01-15 | メモリデバイスの電力管理 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9910473B2 (ja) |
EP (1) | EP2948952B1 (ja) |
JP (1) | JP2016513331A (ja) |
KR (1) | KR101752580B1 (ja) |
CN (1) | CN105074827B (ja) |
TW (1) | TWI529710B (ja) |
WO (1) | WO2014143398A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9910473B2 (en) * | 2013-03-14 | 2018-03-06 | Silicon Storage Technology, Inc. | Power management for a memory device |
KR102557324B1 (ko) * | 2016-02-15 | 2023-07-20 | 에스케이하이닉스 주식회사 | 메모리 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998013742A1 (fr) * | 1996-09-25 | 1998-04-02 | Matsushita Electric Industrial Co., Ltd. | Circuit de conversion frequence-tension, circuit d'evaluation de quantite de retard, systeme a circuit de conversion frequence-tension, procede d'adaptation des caracteristiques entree/sortie du circuit de conversion, et dispositif de reglage automatique pour les caracteristiques entree/sortie dudit circuit |
JPH10209284A (ja) * | 1997-01-20 | 1998-08-07 | Fujitsu Ltd | 半導体装置及び信号伝送システム |
JPH1125686A (ja) * | 1997-07-04 | 1999-01-29 | Toshiba Corp | 半導体記憶装置 |
JP2002175689A (ja) * | 2000-09-29 | 2002-06-21 | Mitsubishi Electric Corp | 半導体集積回路装置 |
WO2003036722A1 (fr) * | 2001-10-26 | 2003-05-01 | Fujitsu Limited | Circuit integre a semi-conducteur, dispositif electronique dans lequel ce circuit integre est incorpore et procede d'economie d'energie |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US5946267A (en) | 1997-11-25 | 1999-08-31 | Atmel Corporation | Zero power high speed configuration memory |
JP4297552B2 (ja) * | 1998-07-06 | 2009-07-15 | 富士通マイクロエレクトロニクス株式会社 | セルフ・タイミング制御回路 |
WO2001009901A1 (fr) | 1999-08-02 | 2001-02-08 | Seiko Epson Corporation | Dispositif a semi-conducteurs integres et appareil electronique monte avec ce dispositif |
JP3374803B2 (ja) * | 1999-09-28 | 2003-02-10 | 日本電気株式会社 | 無線機器 |
US7149909B2 (en) | 2002-05-09 | 2006-12-12 | Intel Corporation | Power management for an integrated graphics device |
JP4597470B2 (ja) | 2002-07-25 | 2010-12-15 | 富士通セミコンダクター株式会社 | 半導体メモリ |
US7050354B2 (en) | 2003-12-16 | 2006-05-23 | Freescale Semiconductor, Inc. | Low-power compiler-programmable memory with fast access timing |
DE602005006422T2 (de) * | 2004-06-21 | 2009-06-18 | Koninklijke Philips Electronics N.V. | Strom-management |
US7245555B2 (en) | 2005-12-12 | 2007-07-17 | Atmel Corporation | Automatic address transition detection (ATD) control for reduction of sense amplifier power consumption |
US20080001677A1 (en) * | 2006-05-22 | 2008-01-03 | Udi Shaked | Ring oscillator clock |
US8612794B2 (en) * | 2009-12-03 | 2013-12-17 | Casio Electronics Manufacturing Co., Ltd. | Clock signal generating device and electronic device |
JP2012230737A (ja) | 2011-04-26 | 2012-11-22 | Elpida Memory Inc | 半導体装置 |
US9910473B2 (en) * | 2013-03-14 | 2018-03-06 | Silicon Storage Technology, Inc. | Power management for a memory device |
-
2013
- 2013-03-14 US US13/830,246 patent/US9910473B2/en active Active
-
2014
- 2014-01-15 KR KR1020157022446A patent/KR101752580B1/ko active IP Right Grant
- 2014-01-15 CN CN201480009430.8A patent/CN105074827B/zh active Active
- 2014-01-15 JP JP2015559237A patent/JP2016513331A/ja active Pending
- 2014-01-15 EP EP14702397.2A patent/EP2948952B1/en active Active
- 2014-01-15 WO PCT/US2014/011722 patent/WO2014143398A1/en active Application Filing
- 2014-01-24 TW TW103102679A patent/TWI529710B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998013742A1 (fr) * | 1996-09-25 | 1998-04-02 | Matsushita Electric Industrial Co., Ltd. | Circuit de conversion frequence-tension, circuit d'evaluation de quantite de retard, systeme a circuit de conversion frequence-tension, procede d'adaptation des caracteristiques entree/sortie du circuit de conversion, et dispositif de reglage automatique pour les caracteristiques entree/sortie dudit circuit |
JPH10209284A (ja) * | 1997-01-20 | 1998-08-07 | Fujitsu Ltd | 半導体装置及び信号伝送システム |
JPH1125686A (ja) * | 1997-07-04 | 1999-01-29 | Toshiba Corp | 半導体記憶装置 |
JP2002175689A (ja) * | 2000-09-29 | 2002-06-21 | Mitsubishi Electric Corp | 半導体集積回路装置 |
WO2003036722A1 (fr) * | 2001-10-26 | 2003-05-01 | Fujitsu Limited | Circuit integre a semi-conducteur, dispositif electronique dans lequel ce circuit integre est incorpore et procede d'economie d'energie |
Also Published As
Publication number | Publication date |
---|---|
EP2948952A1 (en) | 2015-12-02 |
CN105074827A (zh) | 2015-11-18 |
US20140281611A1 (en) | 2014-09-18 |
CN105074827B (zh) | 2018-06-05 |
WO2014143398A1 (en) | 2014-09-18 |
KR101752580B1 (ko) | 2017-06-29 |
KR20150110672A (ko) | 2015-10-02 |
TW201443893A (zh) | 2014-11-16 |
EP2948952B1 (en) | 2017-03-15 |
TWI529710B (zh) | 2016-04-11 |
US9910473B2 (en) | 2018-03-06 |
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