JP2016210962A - 電極形成用組成物ならびにこれを用いて製造された電極および太陽電池 - Google Patents

電極形成用組成物ならびにこれを用いて製造された電極および太陽電池 Download PDF

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Publication number
JP2016210962A
JP2016210962A JP2016048853A JP2016048853A JP2016210962A JP 2016210962 A JP2016210962 A JP 2016210962A JP 2016048853 A JP2016048853 A JP 2016048853A JP 2016048853 A JP2016048853 A JP 2016048853A JP 2016210962 A JP2016210962 A JP 2016210962A
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JP
Japan
Prior art keywords
meth
electrode
acrylate
composition
glass frit
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Pending
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JP2016048853A
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English (en)
Japanese (ja)
Inventor
東 ▲せき▼ 金
Dong-Joek Kim
東 ▲せき▼ 金
周 熙 金
Ju Hee Kim
周 熙 金
永 起 朴
Young Ki Park
永 起 朴
東 一 申
Toichi Shin
東 一 申
錫 鉉 鄭
Seok Hyun Jung
錫 鉉 鄭
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
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Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of JP2016210962A publication Critical patent/JP2016210962A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14Conductive material dispersed in non-conductive inorganic material
    • H01B1/16Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Sustainable Energy (AREA)
  • Conductive Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2016048853A 2015-04-28 2016-03-11 電極形成用組成物ならびにこれを用いて製造された電極および太陽電池 Pending JP2016210962A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20150059696 2015-04-28
KR10-2015-0059696 2015-04-28
KR1020160022005A KR101976661B1 (ko) 2015-04-28 2016-02-24 전극 형성용 조성물 및 이로부터 제조된 전극과 태양전지
KR10-2016-0022005 2016-02-24

Publications (1)

Publication Number Publication Date
JP2016210962A true JP2016210962A (ja) 2016-12-15

Family

ID=57529758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016048853A Pending JP2016210962A (ja) 2015-04-28 2016-03-11 電極形成用組成物ならびにこれを用いて製造された電極および太陽電池

Country Status (4)

Country Link
JP (1) JP2016210962A (zh)
KR (1) KR101976661B1 (zh)
CN (1) CN106098139B (zh)
TW (1) TWI598887B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180063750A (ko) * 2016-12-02 2018-06-12 삼성에스디아이 주식회사 태양전지용 핑거 전극의 제조방법
KR20190073210A (ko) * 2017-12-18 2019-06-26 삼성에스디아이 주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
KR102220531B1 (ko) * 2018-04-23 2021-02-24 삼성에스디아이 주식회사 전극 형성용 조성물 및 이로부터 제조된 전극과 태양전지

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69910335T2 (de) * 1998-12-11 2004-07-01 E.I. Du Pont De Nemours And Co., Wilmington Zusammensetzung für ein Silber enthaltendes, lichtempfindliches, leitendes Band und das damit behandelte Band
KR100996235B1 (ko) * 2004-06-01 2010-11-25 주식회사 동진쎄미켐 PDP 어드레스 전극용 Pb 미함유 Ag 페이스트 조성물
KR20120008135A (ko) * 2010-07-16 2012-01-30 주식회사 동진쎄미켐 접착증진제를 함유하는 저온소성용 열경화성 전극 페이스트
JP5559509B2 (ja) * 2009-10-28 2014-07-23 昭栄化学工業株式会社 太陽電池電極形成用導電性ペースト
KR101309813B1 (ko) * 2010-12-10 2013-09-23 제일모직주식회사 전극 형성용 조성물 및 이로부터 형성된 전극
CN102956283B (zh) 2012-10-25 2016-08-03 上海玻纳电子科技有限公司 一种新型高效晶硅太阳能电池用无铅化银浆及其制备与应用
DE102014014322B4 (de) * 2014-10-01 2017-11-23 Ferro Gmbh Tellurat-Fügeglas mit Verarbeitungstemperaturen ≦ 400 °C

Also Published As

Publication number Publication date
KR101976661B1 (ko) 2019-05-09
KR20160128203A (ko) 2016-11-07
TWI598887B (zh) 2017-09-11
CN106098139B (zh) 2018-06-22
CN106098139A (zh) 2016-11-09
TW201638968A (zh) 2016-11-01

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