JP2016191104A - Sputtering filming method, metallized resin film manufacturing method using the former method, and sputtering filming apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering filming apparatus capable of preventing the blocking phenomenon which is liable to occur at the taking-up time immediately after a sputtering filming operation.SOLUTION: A sputtering filming apparatus comprises: a winding-out roll 52 of a long-sized resin film F; a taking-up roll 76 of the long-sized resin film F; a roll group for defining the transfer passage of the long-sized resin film F to be transported by roll to roll from the winding-out roll 52 and to the taking-up roll 76; and sputtering filming means 57 to 60 for applying a sputtering filming treatment to one face of the long-sized resin film F running on said transfer passage. Between the sputtering filming means 57 to 60 and the taking-up roller 76 on said transfer passage, there is interposed resin surface modification means 77 for modifying the face opposed to the face of the long-sized resin film F, which is subjected to the sputtering deposition of the long-sized resin film F, by an iron beam or a plasma irradiation.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a sputtering film forming method, a metallized resin film manufacturing method using the same, and a sputtering film forming apparatus.

  In an electronic device such as a liquid crystal panel, a notebook computer, a digital camera, and a mobile phone, a flexible wiring board provided with a patterned metal layer on a resin film is used. Such a flexible wiring board can be manufactured by performing wiring processing such as photolithography or etching on a metallized resin film in which a metal film is formed on one side or both sides of a resin film.

  As a method for producing the metallized resin film, conventionally, a method for producing a metal foil by attaching it to a resin film with an adhesive, a method for producing a metal foil by coating a resin solution and then drying (casting method), or Known is a method of forming a metal film on a resin film by vacuum deposition (vacuum deposition, sputtering, ion plating, ion beam sputtering, etc.) or wet plating (metalizing). ing.

  Regarding the metallizing method, for example, Patent Document 1 discloses a method for producing a metallized resin film using a sputtering method capable of forming a metal film having a low adhesion rate but excellent adhesion. In Patent Document 1, a technique using two types of sputtering targets is proposed in order to further increase the adhesion of the metal film. In this technique, a thin metal seed layer is first formed using monel metal or the like as a sputtering target, and then a thick metal film is formed on the metal seed layer using copper or the like as a sputtering target.

  Patent Document 2 discloses a metallized resin by first forming a thin metal base layer using a sputtering method, and then forming a thick metal film on the metal base layer using a wet plating method. A method for efficiently producing a film is disclosed. In this film forming method of Patent Document 2, a wet plating method having a high film forming speed and a sputtering method having a low film forming speed but excellent adhesion are used in combination, and the film forming method of Patent Document 1 using only the sputtering method is used. Compared with the method, the deposition efficiency can be increased.

  Furthermore, as a technique for continuously forming a film on a resin film by sputtering, the long resin film is wound around a can roll equipped with a cooling mechanism while being conveyed by a roll-to-roll method. Sputtering web coaters that perform filming are widely used. However, in the sputtering web coater, a metallized resin film having a high activity on the metal surface immediately after forming the metal film is wound as it is with a winding roll, so that a phenomenon called blocking may occur. This phenomenon is such that the metal film of the lower metallized resin film that overlaps each other sticks to the resin surface of the upper metallized resin film, and from the winding roll at the site where this phenomenon occurs When unwinding the metallized resin film, the metal film of the lower metallized resin film may be peeled off.

  In order to prevent the occurrence of such a blocking phenomenon, a method of applying an organic liquid to the surface of a metal film immediately after film formation as described in Patent Document 3 and a method of oxidizing the metal film surface with an ion beam or plasma have been proposed. . Further, as described in Patent Document 4, a method for preventing blocking by forming a metal oxide film on the surface of the metal film has been proposed. Thus, when continuously forming a metal film on the surface of a long resin film, it is desired to prevent the blocking phenomenon of the metallized resin film.

Japanese Patent No. 3447070 Japanese Patent No. 3570802 JP 2009-249703 A JP 2010-053447 A

  The present invention has been made in view of the above situation, and is a metallized resin film that is likely to occur when a long resin film conveyed by a roll-to-roll method is formed by sputtering and wound up by a take-up roll. An object of the present invention is to provide a sputtering film forming apparatus and a film forming method capable of preventing the blocking phenomenon.

  In order to achieve the above object, a sputtering film forming apparatus according to the present invention includes an unwinding roll for unwinding a long resin film, a winding roll for winding the long resin film, and the winding roll from the unwinding roll. Sputter film formation that performs sputtering film formation on one surface of the roll group that defines the transport path of the long resin film that is transported roll-to-roll to the roll and the long resin film that travels on the transport path A sputtering film forming apparatus comprising: means on the opposite side to the surface on which the sputtering film formation of the long resin film is performed between the sputtering film forming means and the winding roll in the transport path A resin surface modifying means for modifying the surface is provided.

  In addition, the sputtering film forming method according to the present invention is characterized in that the long resin is formed after sputtering film formation is performed on one surface of a long resin film conveyed by a roll-to-roll from an unwinding roll to a winding roll. Before the film is taken up by the take-up roll, the surface of the resin opposite to the surface on which the long resin film is formed by sputtering is modified.

  According to the present invention, it is possible to suppress a blocking phenomenon that is likely to occur when a long resin film conveyed by a roll-to-roll method is formed by sputtering and wound by a winding roll. Thereby, since the problem that the metal layer of this metallized resin film peels from a resin film when unwinding a metallized resin film from a winding roll can be prevented, a high-quality flexible wiring board can be provided.

It is typical sectional drawing of one specific example of the metallized resin film which can be produced with the sputtering film-forming method concerning the present invention. It is typical sectional drawing of the other specific example of the metallized resin film which can be produced with the sputtering film-forming method concerning this invention. It is typical sectional drawing of the other specific example of the metallized resin film which can be produced with the sputtering film-forming method concerning this invention. It is a typical front view of one specific example of the sputtering film-forming apparatus which concerns on this invention.

  Hereinafter, a specific example of the sputtering film forming apparatus and the sputtering film forming method according to the present invention will be described by taking a case of producing a metallized resin film as an example. First, the metallized resin film produced by the sputtering film forming apparatus and the sputtering film forming method according to the present invention will be described. As shown in FIG. 1 (a), the metallized resin film includes a metal seed layer 12 formed on one surface 11a of the resin film 11 by a sputtering film formation method without using an adhesive, and the metal seed. It has a laminated structure including a metal layer 13 formed on the surface of the layer 12. The other surface 11b of the resin film 11 where the metal seed layer 12 and the metal layer 13 are not formed is subjected to a modification process.

  The material of the resin film 11 is polyimide film, polyamide film, polyester film, polytetrafluoroethylene film, polyphenylene sulfide film, polyethylene naphthalate film, olefin film, liquid crystal polymer film, or Teflon film. Is preferable from the viewpoints of flexibility as a metallized resin film, strength necessary for practical use, and electrical insulation suitable as a substrate material for a wiring circuit.

  The material of the metal seed layer 12 is preferably a metal such as nickel, chromium, tungsten, copper, or an alloy of two or more of these. Further, any of the above metals may be formed by sputtering in a reactive sputtering atmosphere to which oxygen or nitrogen is added. When the material of the metal seed layer 12 is a nickel-chromium alloy, the chromium content is preferably 15 to 25% by mass from the viewpoint of insulation reliability and wiring processing. The film thickness of the metal seed layer 12 is preferably 3 to 50 nm, and more preferably 3 to 35 nm from the viewpoint of wiring processing of the metallized resin film.

  The metal layer 13 has a thickness of about 0.5 to 12 μm and is formed of a metal or metal composition different from that of the metal seed layer 12 described above. The material of the metal layer 13 is preferably copper, and the entire layer may be formed by a sputtering film formation method in the same manner as the metal seed layer 12, or as shown in FIG. The base layer 13a is formed, and then the thick metal layer 13b made of the same metal as the metal base layer 13a is formed on the metal base layer 13a by a method different from the sputtering film forming method, thereby forming the metal layer 13 May be formed. In this case, the thickness of the metal base layer 13a is preferably 3 to 1000 nm from the viewpoint of productivity.

  The thick metal layer 13b can be formed by, for example, a dry plating method such as a vapor deposition method or an electroplating method. When the thick metal layer 13b is formed by the electroplating method, the metal seed layer 12 alone has a high electric resistance and cannot be efficiently electroplated. Therefore, as described above, the metal seed is formed on the surface of the metal seed layer 12. A metal base layer 13 a having an electric resistance lower than that of the layer 12 is provided. That is, by laminating the metal seed layer 12 and the metal base layer 13a in this order on the surface of the resin film 11, a resin film with a metal base layer suitable for the electroplating method can be obtained.

  By performing sputtering film formation, electroplating, etc. in the same manner as described above on the surface of the so-called single-sided metallized resin film in which the metal layer is formed only on one side of the resin film as described above. A so-called double-sided metallized resin film in which the metal seed layer 12 and the metal layer 13 are formed on both sides of the resin film 11 as shown in FIG. Furthermore, as shown in FIG. 3, a so-called coated double-sided metallized resin film can be produced by forming a coating layer 14 on the uppermost surface of each double-sided metallized resin film, for example, by sputtering. Thus, by coating the surface of the metal layer 13 with the coating layer 14, a metallized resin film excellent in terms of appearance and the like can be produced. That is, since the metal layer 13 is generally formed of copper, the appearance of the metallized resin film is copper-colored. However, by making the material of the coating layer 14 a metal to which, for example, oxygen or nitrogen is added, Copper coloration due to the metal layer 13 can be suppressed.

  Next, a specific example of the sputtering film forming method of the present invention capable of producing the above-described resin film with a metal base layer will be described. In the following description, the first surface of the resin film on which film formation is performed is referred to as a first surface, and the opposite surface is referred to as a second surface. First, a metal seed layer is formed on the first surface of the long resin film continuously by roll-to-roll from the unwinding roll to the take-up roll by a sputtering film forming method. A metal base layer is formed on the surface of the seed layer by sputtering film formation.

  When the resin film with a metal base layer thus obtained is wound up with a take-up roll as it is immediately after film formation, the metal base layer on the first surface sticks to the second surface at the strongly contacted portion, so-called blocking. The phenomenon occurs. This is because the surface of the metal base layer immediately after film formation is highly active, and therefore easily adheres to the low molecular components of the resin film. Therefore, in the sputtering film forming method of one specific example of the present invention, after forming the metal seed layer and the metal base layer on the first surface of the resin film, the surface of the resin is coated on the second surface before winding with the winding roll. A reforming process is performed.

  Since the low molecular weight component on the second surface of the resin film can be positively removed by this resin surface modification treatment, when the resin film with the metal base layer is wound on a take-up roll, the metal base layer on the first surface and the second surface Even if the resin surface of the surface is in strong contact, the metal base layer can be prevented from sticking to the second surface. That is, low molecular components such as uncured oligomers at the time of manufacturing the resin film remain on the surface of the resin film, and a highly active metal base layer is easily adhered as it is. On the other hand, the low molecular component on the surface can be removed by modifying the resin film, and as a result, the highly active metal base layer is less likely to stick to the surface of the resin film.

  In addition, although it is desirable to remove the low molecular components on the surface of the above-described resin film on both the first surface and the second surface before sputtering film formation, both the first surface and the second surface are removed before film formation. Is costly. Therefore, in one specific example of the sputtering film forming method of the present invention, the first surface of the long resin film is subjected to the sputtering film forming, and then the second surface modification treatment is performed. As described above, by performing the resin surface modification treatment after the sputtering film formation, the low molecular components remaining in the long resin film from the beginning, the low molecular components generated during the sputtering film formation, and further on the transport path. Even when the low molecular component that has adhered is attached to the long resin film and conveyed, the low molecular component of the long resin film can be removed.

  The modification treatment of the resin surface is preferably performed by ion beam or plasma. At that time, it is only necessary to remove the low molecular component on the second surface of the resin film, and excessive modification treatment is not preferable. In order to avoid excessive modification treatment, it is desirable to use a rare gas for ion beam treatment or plasma treatment. That is, in general, the resin surface is modified in an atmosphere containing oxygen gas or nitrogen gas. However, if oxygen gas or the like is used, excessive resin surface modification treatment tends to occur. On the other hand, by using a rare gas, the surface of the long resin film can be modified so weakly that only the low-molecular components on the second surface can be removed, and it is not excessively processed.

  For example, when argon is used as a rare gas, after reducing the pressure in the decompression chamber for modifying the resin surface, argon is introduced to keep the pressure in the decompression chamber at 10 Pa or less, preferably about 1 Pa, and in this state, An appropriate modification treatment can be performed by irradiating the second surface of the length resin film with an argon ion beam or irradiating with plasma.

  In addition, since the output of plasma discharge in ion beam irradiation or plasma irradiation when modifying the resin surface varies depending on the long resin film to be used, low molecular components are generated from the surface of the surface-modified long resin film. What is necessary is just to define a process condition so that it may almost disappear. When an excessive resin surface modification treatment is performed, the functional group at the terminal of the oligomer generated by cutting the polymer increases on the surface of the long resin film, so it can be determined whether or not the treatment conditions are excessive. In addition, quantitative analysis of low molecular components such as oligomers present on the surface of the long resin film described above elutes the oligomer components by immersing the resin in a lower alcohol such as ethanol so as not to dissolve the long resin film, The alcohol solution from which the oligomer component is eluted can be obtained by a known organic chemistry analysis method such as gas chromatography or infrared absorption analysis.

  Next, a sputtering film forming apparatus according to a specific example of the present invention capable of producing the above-described resin film with a metal base layer will be described by taking a sputtering web coater 50 shown in FIG. 4 as an example. The sputtering web coater 50 forms a seed layer and a metal base layer on the first surface of the long resin film F by a sputtering method in the first decompression chamber 51, and the long resin film F in the second decompression chamber 71. A reforming treatment is performed on the second surface.

  Since these first decompression chamber 51 and second decompression chamber 71 have different suitable atmospheric pressures, they are partitioned by a partition wall 72 and differentially exhausted. The partition wall 72 is provided with an opening 72 a so that the resin film F from the first decompression chamber 51 toward the second decompression chamber 71 can pass therethrough. The opening 72a is provided with a pair of slit rolls 73 that sandwich the film-formed resin film F passing through from above and below. Although this slit roll 73 does not need to be provided, the airtightness of each decompression chamber can be further enhanced by providing it.

  In the first decompression chamber 51, an unwinding roll 52 for unwinding the long long resin film F and a can equipped with a water cooling temperature adjusting mechanism inside the long resin film F so as to be wound around the outer peripheral surface and cooled. Four magnetron sputter cathodes 57, 58, 59, and 60 as sputtering film forming means provided along the transport path of the long resin film F at a position facing the outer peripheral surface of the roll 56 and the can roll 56; Is provided. Furthermore, free rolls 53 and 54 and a feed roll 55 that define a conveyance path from the unwinding roll 52 to the can roll 56, and a feed roll 61 and a free roll 62 that define a conveyance path from the can roll 56 to the slit roll 73, 63 are arranged in this order.

  Thus, in the first decompression chamber 51, since sputtering film formation is performed with the long resin film F wound around the outer peripheral surface of the can roll 56, thermal damage due to plasma during film formation can be suppressed. it can. In addition, it is preferable to use a plate-like target for the magnetron sputtering cathode. However, nodule (growth of foreign matter) may occur in the plate-like target, so that no nodule is generated and the use efficiency of the target is high. A rotary target may be used. Further, in the case where control is performed so that the long resin film F is brought into close contact with the rotationally driven can roll 56 at a differential speed, the feed rolls 55 and 56 may be rotationally driven.

  Furthermore, a surface treatment unit for performing plasma treatment or ion beam treatment in which argon gas, oxygen gas, or the like is introduced can be arranged in a portion preceding the portion in the first decompression chamber 51 where the sputtering film formation is performed. is there. By disposing such a surface treatment unit, both surfaces of the long resin film F can be cleaned and activated.

  In the second decompression chamber 71, an ion beam irradiation device or a plasma discharge device is used to perform a modification treatment on the second surface of the long resin film F formed on the first surface in the first decompression chamber 51. Resin surface modification means 77 is provided. Furthermore, free rolls 74 and 75 for guiding the long resin film F, and a winding roll 76 for winding the long resin film F processed by the resin surface modifying means 77 are provided. The winding roll 76 and the above-described unwinding roll 52 in the first decompression chamber 51 are torque-controlled by a powder clutch or the like, and the tension balance of the long resin film F is maintained. In order to measure the tension of the long resin film F, tension sensors may be attached to the free roll 74 and the free rolls 54 and 62 in the first decompression chamber 51 described above. The second decompression chamber 71 is provided with an introduction portion (not shown) for introducing an inert gas (rare gas).

  With such a configuration, the long resin film F unwound from the unwinding roll 52 by the rotation of the can roll 56 provided with the driving means is subjected to water-cooled temperature control via the free rolls 53 and 54 and the feed roll 55. Here, four magnetron sputter cathodes 57, 58, to which metal targets for film formation of the seed layer and metal base layer are respectively attached while being wound around the outer peripheral surface of the can roll 56 and cooled. 59, 60 (for example, the magnetron sputter cathode 57 is used for forming a seed layer, and the magnetron sputter cathodes 58, 59, 60 are used for forming a metal base layer). Layers are deposited in this order. The formed long resin film F leaves the first decompression chamber 51 through the feed roll 61 and the free rolls 62 and 63, and then the second decompression through the slit roll 73 provided in the opening 72a of the partition wall 72. It is carried into the chamber 71.

  In the second decompression chamber 71, the long resin film F that has been subjected to film formation is guided by the free roll 74, and then the second surface is modified by the resin surface modification means 77. Thereafter, the film is wound up by a winding roll 76 through a free roll 75. The long base resin film with the metal base layer obtained by the film forming treatment and the reforming treatment on both sides is obtained by winding the metal base layer on the first surface of the long resin film when the roll is wound by the take-up roll 76. Even if the resin surface on the second surface is in strong contact, the low-molecular component on the second surface is almost removed, so that the blocking phenomenon hardly occurs. Therefore, since the problem which the metal base layer of a long resin film with a metal base layer peels from a resin film hardly arises, it becomes possible to produce a high quality metallized resin film.

  In order to form the metal base layer on both sides of the long resin film, for example, the metal base in which the first surface and the second surface of the long resin film are respectively formed and modified by the sputtering web coater 50 described above. The second surface of the layered long resin film may be similarly formed by sputtering using the sputtering web coater 50 again. In this case, the resin surface modification means 77 needs to be stopped in order to prevent the resin surface modification process from being performed on the first surface side after the film formation on the second surface. When the metal base layer is formed on the second surface in this manner, the metal base layer on the second surface comes into contact with the metal base layer on the first surface when wound with a winding roll immediately after the film formation on the second surface. However, in this case, such a problem can be avoided by inserting a known slip sheet between the two metal base layers.

  In addition, when a thick metal layer is formed on the surface of a metal base layer of a long resin film with a single-sided or double-sided metal base layer using a wet plating method, it may be thickened only by an electroplating process. A thick film may be formed by combining electroless plating treatment as plating and electrolytic plating treatment as secondary plating. In either case, general wet plating conditions can be adopted as the various conditions for the wet plating process. In addition, on each surface of the long resin film, the total thickness of the metal layers formed on the surface of the seed layer by a dry method (sputtering method) or a wet plating method is preferably 12 μm or less.

  The metallized resin film obtained above can obtain a flexible wiring board by patterning a wiring circuit using a known semi-additive method or subtractive method. For example, a metallized resin film is prepared by the above-described method, a screen printing or dry film is laminated on the metal film to form a photosensitive resist film, and then exposed and developed to form a patterned mask. Next, the metal film is selectively removed by etching with an etchant such as a ferric chloride solution, and then the resist film is removed to form a predetermined wiring circuit pattern. In addition, it can also use for the touchscreen sensor of a display screen by processing into a fine line | wire with a width of 10 micrometers or less.

  In the case of a double-sided metallized resin film, a wiring circuit pattern can be formed on both sides of the flexible sheet by patterning both sides by the above method. Whether all the wiring patterns are divided into several wiring areas depends on the distribution of the wiring density of the wiring circuit patterns. For example, the wiring pattern is divided into a high-density wiring region and a wiring region each having a wiring width and a wiring interval of 50 μm or less, and the wiring substrate is divided in consideration of the difference in thermal expansion from the printed circuit board and handling conditions. What is necessary is just to divide suitably, setting a size to about 10-65 mm.

  In the case of a double-sided metallized resin film, a via hole is formed as necessary. A conventional method can be used for forming the via hole. For example, a via hole penetrating the metal layer and the resin film is formed at a predetermined position of the wiring pattern by laser processing or the like. The inner diameter of the via hole is preferably small as long as it does not hinder the conductivity in the hole, and is usually 100 μm or less, preferably 50 μm or less. The via hole is made conductive by a method of filling a conductive metal such as copper by plating, vapor deposition, sputtering or the like, or a method of pressing a conductive paste using a mask having a predetermined opening pattern and then drying. . This allows electrical connection between different layers.

  According to the above-described method for producing a metallized resin film of one embodiment of the present invention, a high-quality metallized resin film having excellent adhesion to the metal base layer and almost no pinholes can be efficiently produced. It becomes possible to improve the reliability of electronic devices such as liquid crystal televisions and mobile phones using a flexible wiring board obtained by patterning.

[Example 1]
A long resin film with a metal base layer was prepared using a sputtering web coater 50 as shown in FIG. For the long resin film F, a PET film “Lumirror (registered trademark)” manufactured by Toray Industries, Inc. having a width of 500 mm, a length of 1000 m, and a thickness of 25 μm was used. In order to form a metal seed layer of nickel-chromium alloy with a film thickness of 25 nm and a copper metal base layer with a film thickness of 100 nm, a sputtering mass of 57 mass% nickel-chromium alloy sputtering target is attached to the sputtering cathode 57, and sputtering is performed. A copper sputtering target was attached to the cathodes 58, 59 and 60. As the resin surface modification means 77, an ion beam irradiation apparatus PPALS manufactured by General Plasma Inc. was used, and ion beam treatment was performed under conditions of a gas pressure of 1.2 × 10 ⁻² Pa and a voltage of 2000V. Argon gas was used for the ion beam. In this way, after the metal layer was formed on the first surface of the long resin film F, the second surface was modified and wound up by the winding roll 76.

  Next, the long resin film with a metal base layer wound up on the winding roll 76 is unwound, rewound so that the front and back surfaces are reversed, and set again on the unwinding roll 52 of the sputtering web coater 50. . During this rewinding, no blocking phenomenon was observed in the winding roll 76. Then, except that the power supply to the ion beam irradiation apparatus was stopped, sputtering film formation was performed on the second surface side not formed on the long resin film with the metal base layer in the same manner as described above, and the winding roll 76 Winded up. In addition, at the time of this winding, it wound up, inserting a long interleaving paper between both metal base layers. When the obtained long resin film with a double-sided metal base layer was visually confirmed, neither the first surface nor the second surface was found uneven or peeled due to the blocking phenomenon.

[Example 2]
A plasma discharge device manufactured by JEOL Ltd. was used as the resin surface modification means 77 and plasma treatment was performed under the conditions of a gas pressure of 1.6 Pa and a voltage of 1200 V on both sides of the PET film in the same manner as in Example 1 above. A metal layer was deposited. Note that argon gas was used as the plasma gas. As a result, the occurrence of blocking phenomenon was not observed when the film was rewound in the same manner as in Example 1 after film formation on one side. Moreover, when the long-sided resin film with a double-sided metal base layer was visually confirmed after double-sided film formation, the unevenness | corrugation and peeling resulting from a blocking phenomenon were not looked at by either the 1st surface and the 2nd surface.

[Comparative example]
In order to form a metal layer on both sides of the PET film in the same manner as in Example 1 except that the power supply to the ion beam irradiation apparatus is stopped, a take-up roll of the PET film with the metal layer formed only on the first surface When trying to unwind from 76, it was not possible to smoothly unwind from the take-up roll 76 due to the blocking phenomenon.

DESCRIPTION OF SYMBOLS 11 Resin film 11a 1st surface 11b 2nd surface 12 Metal seed layer 13a Metal base layer 13b Thick metal layer 13 Metal layer 14 Covering layer 50 Sputtering web coater 51 First decompression chamber 52 Unwinding roll 53, 54, 62, 63 Free roll 55, 61 Feed roll 56 Cooling can roll 57, 58, 59, 60 Magnetron sputter cathode 71 Second decompression chamber 72 Bulkhead 72a Opening 73 Slit roll 74, 75 Free roll 76 Winding roll 77 Resin surface modification means F Long resin film

Claims (8)

Of the unwinding roll which unwinds a long resin film, the winding roll which winds up the said long resin film, and the said long resin film conveyed by the roll to roll from the said unwinding roll to the said winding roll A sputtering film forming apparatus comprising: a roll group that defines a transport path; and a sputtering film forming unit that performs sputtering film formation on one surface of the long resin film that travels along the transport path,
A resin surface modifying means for modifying the surface of the long resin film opposite to the surface on which the sputtering film formation is performed is provided between the sputtering film forming means and the winding roll in the transport path. A sputtering film forming apparatus characterized in that:   2. The sputtering film forming apparatus according to claim 1, wherein the resin surface modifying unit is an ion beam irradiation unit configured to irradiate an ion beam toward the opposite surface of the long resin film.   The sputtering film forming apparatus according to claim 1, wherein the resin surface modifying unit is a plasma irradiation unit that irradiates plasma toward the opposite surface of the long resin film.   After performing sputtering film formation on one surface of the long resin film conveyed by roll-to-roll from the unwinding roll to the winding roll, before winding the long resin film with the winding roll, A sputtering film forming method, comprising: modifying a resin surface opposite to a surface on which a long resin film is formed by sputtering.   The sputtering film forming method according to claim 4, wherein the reforming process is an ion beam process using a rare gas.   The sputtering film forming method according to claim 4, wherein the modification treatment is a plasma treatment using a rare gas. A method for producing a metallized resin film comprising a long resin film and a metal layer formed on one surface thereof without an adhesive,
The sputtering film forming method according to claim 4, wherein a seed layer and a part or all of the metal layer on the surface of the seed layer are formed on the surface of the long resin film. A method for producing a metallized resin film. A method for producing a double-sided metallized resin film comprising a long resin film and a metal layer formed on both sides thereof without an adhesive,
A second seed layer and a second seed layer on the surface of the second seed layer are formed by sputtering on a resin surface on which the metallized resin film produced by the manufacturing method according to claim 7 is not formed. A method for producing a double-sided metallized resin film, wherein a part or the whole of a metal layer is formed.

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