JP2016190963A - Adhesive film for semiconductor, dicing tape-integrated adhesive film for semiconductor, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive film that can sufficiently fill recesses and projections of a wiring board in a sealing process while preventing influences of curing by heat generating in a die bonding process or a wire bonding process, and that develops sufficient adhesive power by heating in a short time.SOLUTION: An adhesive sheet for a semiconductor has an adhesive layer, in which the adhesive layer shows a storage modulus of 3 MPa or less at 175°C measured at a frequency of 10 Hz by use of a dynamic viscoelasticity measurement device. After the adhesive layer is thermally press-bonded to a wiring board and cured at 150°C for 1 hour, the cured product of the adhesive layer shows a die shear strength of 0.3 MPa or more at 175°C.SELECTED DRAWING: None

Description

  The present invention relates to a semiconductor adhesive film, a dicing tape-integrated semiconductor adhesive film, and a semiconductor device.

  Conventionally, a silver paste has been mainly used for joining a semiconductor element and a wiring board for mounting a semiconductor element. However, with the recent miniaturization and high performance of semiconductor elements, there is a growing demand for miniaturization and miniaturization of wiring boards used. In response to these demands, silver paste addresses such demands by the occurrence of defects at the time of wire bonding due to protrusions and inclination of semiconductor elements, difficulty in controlling the thickness of the adhesive film, and the occurrence of voids in the adhesive film. I can't understand. For this reason, film adhesives have recently been used in order to meet the above requirements.

  The mounting substrate manufacturing process is as follows. First, the adhesive film is bonded to a dicing tape, and then the other surface of the adhesive film is bonded to the back surface of the semiconductor wafer. Thereafter, the wafer and the adhesive film are separated into semiconductor elements in a dicing process. Next, the semiconductor element with the adhesive film separated in the die bonding step is picked up and bonded to the wiring board (die attaching step). Thereafter, in order to prevent the semiconductor element bonded to the wiring board from being peeled off or removed during transportation, curing is performed in an oven for a short time (temporary curing step). Thereafter, a mounting substrate is obtained through a wire bonding process, a sealing process, a sealing material curing process, and a reflow process for soldering (see, for example, Patent Document 1).

JP 2009-88480 A

  Reliability is one of the most important characteristics as a mounting board on which various electronic components such as semiconductor elements are mounted. One factor that reduces the reliability is that the adhesive film cannot sufficiently bury the irregularities on the wiring board. The adhesive film attached to the upper surface of the wiring board in the die bonding process needs to bury the irregularities on the upper surface of the wiring board by a high temperature and pressure in the sealing process after the temporary curing process and the wire bonding process. However, in recent years, the capacity of the mounting substrate has been increased by laminating semiconductor elements with adhesive films on the wiring board in multiple stages, and by repeatedly performing the die bonding process and the wire bonding process in order to laminate the semiconductor elements in multiple stages. Due to the heating in these steps, curing of the adhesive film proceeds and the unevenness of the wiring substrate cannot be embedded in the sealing step, resulting in a problem that the reliability of the mounting substrate is lowered.

  From the viewpoint of increasing the capacity of the mounting substrate, an important characteristic of the adhesive film is the unevenness embedding property on the upper surface of the wiring substrate in the sealing step. For this purpose, it is necessary to cure the adhesive film which is not easily affected by heating in the die bonding process and the wire bonding process.

  On the other hand, the adhesive film that is not easily affected by heating in the die bonding process and the wire bonding process does not develop unless the thermal history is applied to the adherend for a long time, and after the semiconductor element with the adhesive film is bonded to the wiring board There is a risk that the semiconductor element bonded to the wiring substrate in the die bonding process or the wire bonding process may be peeled off or removed during transportation. Therefore, by adding an oven curing process, the adhesive force between the adhesive film and the wiring board is improved and the risk of peeling is avoided, but in the case of an adhesive film designed to be less susceptible to heating, the oven conditions are longer. There is a concern that the process time may be prolonged.

  The present invention is not affected by curing due to heat generated in the die-bonding process or wire-bonding process, can sufficiently bury the unevenness of the wiring board in the sealing process, and has a sufficient adhesive force by heating in a short time. It is an object of the present invention to provide an adhesive film, a dicing tape-integrated adhesive film for a semiconductor, and a semiconductor device.

  The present invention is characterized by the following.

  An adhesive sheet for a semiconductor having an adhesive layer, wherein the cured adhesive layer has a storage elastic modulus at 175 ° C. measured at a frequency of 10 Hz using a dynamic viscoelasticity measuring device of 3 MPa or less, An adhesive film for a semiconductor, wherein a die shear strength at 175 ° C. of a cured adhesive layer after the adhesive layer is thermocompression bonded to a wiring substrate and cured at 150 ° C. for 1 hour is 0.3 MPa or more.

（ｎは１〜３の整数であり、Ｒはメトキシ基（ＣＨ_３Ｏ−）またはメチル基（ＣＨ_３−）のいずれかで構成される）で表される半導体用接着フィルム。 The adhesive layer is an adhesive composition including an epoxy resin, an epoxy resin curing agent, an epoxy group-containing (meth) acrylic copolymer, and a silane coupling agent, and the silane coupling agent is formula:

(N is an integer of 1 to 3, and R is composed of either a methoxy group (CH ₃ O—) or a methyl group (CH ₃ —)).

  The adhesive film for semiconductors whose thickness of the said adhesive bond layer is 1-40 micrometers.

  The epoxy group-containing (meth) acrylic copolymer has a glass transition temperature (Tg) of −50 to 30 ° C. and contains 0.5 to 3.0% by mass of an epoxy group-containing repeating unit. Is an adhesive film for semiconductor, characterized in that is a copolymer of 100,000 or more.

  The ratio B / (A + B) between the total mass A of the epoxy resin and the epoxy resin curing agent and the mass B of the epoxy group-containing (meth) acrylic copolymer is 0.70 to 0.90. Adhesive film.

  The adhesive film for a semiconductor, wherein the adhesive composition further comprises 10 to 30 parts by mass of an inorganic filler having an average particle diameter of 0.01 to 0.1 μm with respect to 100 parts by mass of the resin.

  The adhesive film for a semiconductor, wherein the inorganic filler has a spherical shape.

  The adhesive film for semiconductors in which the said adhesive bond layer contains a silica filler.

  A dicing tape-integrated adhesive film for semiconductors, which is formed by integrating an adhesive film for semiconductors and a dicing tape.

  A semiconductor device having a structure in which a semiconductor element and a support member are bonded using an adhesive film for a semiconductor.

  According to the present invention, the unevenness of the wiring substrate can be sufficiently embedded in the sealing process without being affected by the heat generated in the die bonding process and the wire bonding process, and heating in a short time is sufficient. It is possible to provide an adhesive film, a dicing tape-integrated adhesive film for a semiconductor, and a semiconductor device capable of exhibiting a sufficient adhesive force.

(Adhesive film for semiconductors)
The adhesive layer constituting the adhesive film for semiconductor of the present invention has a storage elastic modulus at 175 ° C. of 3 MPa or less measured at a frequency of 10 Hz using a dynamic viscoelasticity measuring device in a C-stage state after curing. 175 degreeC assumes the temperature in a sealing process, and when it is 3 MPa or more, the uneven | corrugated embedding property of the wiring board upper surface in a sealing process may become inadequate.

  The storage elastic modulus of the cured adhesive layer was determined by curing the adhesive layer at 175 ° C. for 5 hours, and then using a dynamic viscoelasticity measuring apparatus (trade name DVE-V4, manufactured by Rheology). The layered product can be measured in a temperature-dependent measurement mode in which a tensile load is applied to the layered product and the frequency is measured from −50 to 300 ° C. at a frequency of 10 Hz and a heating rate of 3 to 10 ° C./min.

  The adhesive film for semiconductor of the present invention has a die shear strength at 175 ° C. of 0.3 MPa or more of the cured adhesive layer after thermocompression bonding to a wiring board and curing at 150 ° C. for 1 hour. When the die shear strength is less than 0.3 MPa, there is a possibility that peeling occurs between the adhesive film and the substrate when the substrate is conveyed, or foreign matter may be mixed between the silicon wafer and the adhesive sheet during molding.

  For the die shear strength, the adhesive layer surface of the adhesive film is attached to a silicon wafer at 70 ° C., and the adhesive layer is pressure-bonded to an uneven wiring board under conditions of a pressure of 0.15 MPa, a time of 1.0 seconds, and a temperature of 120 ° C. It can be cured at 150 ° C. for 1 hour to prepare a sample of the cured adhesive, and can be measured at a measurement temperature of 175 ° C. using a universal bond tester (manufactured by Dage).

  Moreover, the adhesive film for semiconductor of the present invention is applied to the organic substrate with the adhesive layer surface, cured at 70 ° C. for 3 hours, and then subjected to moisture absorption under the conditions of 85 ° C., relative humidity 85%, holding time 48 hours, The ratio of the die shear strength at 265 ° C. of the cured adhesive layer to the organic substrate before and after the treatment (die shear strength after moisture absorption treatment / die shear strength before moisture absorption treatment) is preferably 0.7 or more. When the die shear strength ratio is less than 0.7, solder reflow resistance is poor, and peeling may occur between the adhesive layer and the substrate. The die shear strength is an index of adhesive strength, and the larger the die shear strength ratio, the better the solder reflow resistance and the higher the reliability.

  The die shear strength ratio can be obtained as follows. The adhesive layer surface of the adhesive film is affixed to the half element at a temperature of 70 ° C., a pressure of 0.3 MPa, and a speed of 0.3 m / min, and then an organic substrate under the conditions of 0.1 MPa, time 5 seconds, and temperature 120 ° C. And then cured at 175 ° C. for 5 hours, followed by moisture absorption treatment under conditions of a temperature of 85 ° C., a relative humidity of 85% and a holding time of 48 hours, and a measuring temperature of 265 ° C. using a universal bond tester (manufactured by Dage). Measure the die shear strength after the moisture absorption treatment, and calculate the die shear strength ratio.

  As a method of setting the die shear strength ratio to 0.7 or more, for example, a phenol resin having a water absorption of 2% by mass or less is used as a curing agent which is a component constituting the adhesive layer, and a blending amount of the curing accelerator is adjusted. To do.

(Adhesive layer)
Hereinafter, the adhesive layer which comprises the adhesive film for semiconductors of this invention is demonstrated.

(Epoxy group-containing (meth) acrylic copolymer)
The epoxy group-containing (meth) acrylic copolymer used in the present invention has a glass transition temperature (Tg) of −50 to 30 ° C. and contains 0.5 to 3.0% by mass of an epoxy group-containing repeating unit. , A copolymer having a weight average molecular weight of 100,000 or more.

  As the epoxy group-containing (meth) acrylic copolymer, for example, a (meth) acrylic ester copolymer and acrylic rubber can be used, and acrylic rubber is more preferable. The acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer of butyl acrylate and acrylonitrile or the like, a copolymer of ethyl acrylate and acrylonitrile, or the like.

  As the functional monomer of the acrylic copolymer, those that are incompatible with the epoxy resin, the epoxy resin and the acrylic copolymer are separated after curing, and the reflow crack resistance and heat resistance are effectively expressed. It is preferable at the point which can obtain an agent. Among these, it is preferable to use glycidyl acrylate or glycidyl methacrylate which is incompatible with the epoxy resin. The amount of the epoxy group-containing repeating unit needs to be contained in the epoxy group-containing (meth) acrylic copolymer in an amount of 0.5 to 3.0% by mass. When it is in this range, securing of adhesive force and prevention of gelation can be achieved simultaneously.

  In addition to the epoxy group-containing repeating units in the copolymer, ethyl or butyl (meth) acrylic repeating units, or a mixture of both can be used. The mixing ratio is determined in consideration of the glass transition temperature (hereinafter referred to as “Tg”) −50 to 30 ° C. of the copolymer of the present invention.

  An epoxy group-containing (meth) acrylic copolymer containing 0.5 to 2.7% by mass of this epoxy group-containing repeating unit is, for example, HTR-860P manufactured by Teikoku Chemical Industry Co., Ltd. containing 3% by mass of glycidyl. 3 (trade name) can be used. The polymerization method is not particularly limited, and pearl polymerization, solution polymerization, and the like can be used. As a result, the tackiness of the adhesive layer in the B-stage state is appropriate, and the handleability is good.

  The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 to 3,000,000, preferably 500,000 to 2,000,000. If the weight average molecular weight is within this range, the strength, flexibility, and tackiness of the film and film can be controlled appropriately, the flowability is good, and the circuit fillability of the wiring is kept good. Can do.

(Epoxy resin and Poxy resin curing agent)
The ratio B / (A + B) between the total mass A of the epoxy resin and the epoxy resin curing agent and the mass B of the epoxy group-containing (meth) acrylic copolymer is preferably 0.70 to 0.90. If it is 0.70 or less, the elastic modulus is high, and the embedding property on the upper surface of the wiring board is lowered in the sealing process, and a space (void) may remain between the film and the wiring board. This foams in the reflow process, PKG reliability may be reduced. On the other hand, when the value is 0.90 or more, the die shear strength is lowered, and there is a concern that the adhesive film is peeled off from the substrate when the substrate is conveyed.

(Inorganic filler)
The inorganic filler that is optionally used in the present invention is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, Aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica can be used, and these can be used alone or in combination of two or more. In order to improve thermal conductivity, it is preferable that aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica or the like is contained. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, crystalline silica, It is preferable that amorphous silica or the like is contained. The inorganic filler is preferably spherical.

  As for the usage-amount of an inorganic filler, 10-30 mass parts is preferable with respect to 100 mass parts of adhesive compositions. If it is 10 parts by mass or less, the adhesiveness is lowered, and the PKG (package) reliability may be lowered. If it is 30 parts by mass or more, the elastic modulus increases, and it may be difficult to maintain sufficient softness to follow the substrate unevenness. The average particle size of the inorganic filler is preferably 0.01 μm to 0.1 μm from the viewpoint of adhesiveness and the thickness of the adhesive layer. When the thickness is 0.01 μm or less, filler aggregates cause the filler aggregates to be deposited on the film, which may cause deterioration of the film appearance. If the film thickness is 0.1 μm or more, there is a concern that when the film is thinned, streaky scratches caused by the filler cause the film appearance to deteriorate. In addition, when thermocompression bonding is performed on a wiring board with unevenness, the die shear strength is reduced due to a reduction in the bonding area, and there is a concern that the adhesive film may be peeled off from the board when the board is transported.

(Curing accelerator)
Moreover, a hardening accelerator can also be added to the adhesive composition of this invention. The curing accelerator is not particularly limited, and various imidazoles can be used. Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, etc., and these include one kind or two or more kinds. It can also be used together.

  0.05-0.2 mass part is preferable with respect to 100 mass parts of total mass with an epoxy resin and an epoxy resin hardening | curing agent, and, as for the addition amount of a hardening accelerator, 0.05-0.1 mass part is more preferable. Within this range, it is possible to achieve both the embedding property of the top surface of the wiring substrate in the sealing step and the PKG reliability. If it is 0.05 parts by mass or less, the film cannot be completely cured in the sealing material curing step, and there is a fear that the PKG reliability is lowered. If it is 0.2 parts by mass or more, the film cures by heating before the sealing process, and the film becomes hard, so that the uneven embedding property on the upper surface of the wiring board in the sealing process is lowered, and a space ( Voids) may remain, which may foam during the reflow process and reduce PKG reliability.

(Other materials)
In addition to the epoxy resin, curing agent, epoxy group-containing (meth) acrylic copolymer, inorganic filler, and curing accelerator, the resin composition constituting the adhesive film may include a catalyst, an additive, and a cup as necessary. Various additives such as a ring agent may be further included. Although there is no restriction | limiting in particular, In order to improve the adhesive force with respect to a to-be-adhered body, it is preferable that a coupling agent is included.

（ｎは１〜３の整数であり、Ｒはメトキシ基（ＣＨ_３Ｏ−）またはメチル基（ＣＨ_３−）のいずれかで構成される）で表されるシランカップリング剤を含んでいることが望ましい。 (Coupling agent)
Among the resin compositions constituting the adhesive film, the following general formula is used as a coupling agent:

(N is an integer of 1 to 3, and R includes a silane coupling agent represented by a methoxy group (CH ₃ O—) or a methyl group (CH ₃ —)). Is desirable.

  Examples of the silane coupling agent include 3- (N-phenyl) aminopropyltrimethoxysilane, 3- (N-phenyl) aminomethyltrimethoxysilane, 3- (N-phenyl) aminodimethoxymethylsilane, and the like. May be used alone or in combination of two or more.

(Support)
The adhesive film of the present invention can be obtained by forming a film by dissolving or dispersing the adhesive composition of the present invention in a solvent to form a varnish, coating the substrate on a support, heating, and removing the solvent. .

  As the support, plastic films such as polytetrafluoroethylene, polyethylene terephthalate, polyethylene, polypropylene, polymethylpentene, and polyimide can be used. These supports may be used after the surface is released from the mold. it can. Further, the support can be used after being peeled off at the time of use to make only the adhesive film, or can be used as a support with an adhesive film together with the support, and the support can be removed later.

(solvent)
Although it does not specifically limit as a solvent for varnishing said adhesive composition, In consideration of the volatility at the time of film preparation, etc., methanol, ethanol, 2-methoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, It is preferable to use a solvent having a relatively low boiling point such as methyl isobutyl ketone, 2-ethoxyethanol, toluene, and xylene. In order to improve the coating properties, a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, and cyclohexanone can be added.

(Dispersion of filler)
In the production of the varnish when the inorganic filler is added to the adhesive composition of the present invention, in consideration of the dispersibility of the inorganic filler, it is preferable to use a raking machine, a three roll, a ball mill or a bead mill. These can be used in combination. In addition, after mixing the inorganic filler and the low molecular weight material in advance, the mixing time can be shortened by blending the high molecular weight material. Further, after the varnish is formed, the bubbles in the varnish can be removed by vacuum degassing or the like.

(Coating)
As a method for applying varnish to the support (coating method), known methods can be used, for example, knife coating method, roll coating method, spray coating method, gravure coating method, bar coating method, curtain coating method. Etc.

(Adhesive film thickness)
The thickness of the adhesive film (the thickness of the adhesive layer) is not particularly limited, but is preferably 3 to 40 μm. When the thickness is within this range, it is possible to sufficiently exhibit the unevenness embedding property of the wiring board and it is economical.

(Film laminate)
Moreover, in order to obtain desired thickness, the adhesive film of this invention can also bond 2 or more sheets. In this case, the bonding conditions for preventing peeling of the adhesive films are necessary.

(Dicing tape integrated semiconductor adhesive film)
The adhesive film of the present invention may be used by itself, but can also be used as a dicing tape-integrated adhesive film in which the adhesive film of the present invention is laminated on a conventionally known dicing tape. As a method of laminating the adhesive film on the dicing tape, printing, as well as press and hot roll laminating methods of pre-made adhesive film on the dicing tape can be mentioned. A roll laminating method is preferred. The film thickness of the dicing tape is not particularly limited and is appropriately determined based on the knowledge of those skilled in the art depending on the film thickness of the adhesive film and the application of the dicing tape-integrated adhesive film. The film has a handleability of 60 to 200 μm, preferably 70 to 170 μm in terms of good handleability.

(Wiring board)
As the wiring board for mounting on a semiconductor used in the present invention, a lead frame having a die pad, a ceramic substrate, an organic substrate, or the like can be used without being limited to the substrate material. As the ceramic substrate, an alumina substrate, an aluminum nitride substrate, or the like can be used. As the organic substrate, an FR-4 substrate in which an epoxy resin is impregnated in a glass cloth, a BT substrate in which a bismaleimide-triazine resin is impregnated, a polyimide film substrate using a polyimide film as a base material, or the like is used. Can do.

  The shape of the wiring may be any of single-sided wiring, double-sided wiring, and multilayer wiring, and may be provided with through-holes and non-through-holes that are electrically connected as necessary. Further, when the wiring appears on the outer surface of the semiconductor device, it is preferable to provide a protective resin layer.

(Crimping)
As a method of attaching the adhesive film to the wiring board, a method of cutting the adhesive film into a predetermined shape and thermocompression bonding the cut adhesive film to a desired position on the wiring board is generally limited. Not what you want.

(Semiconductor element)
As the semiconductor element, a general semiconductor element such as an IC, LSI, VLSI can be used.

(Semiconductor device)
Using the adhesive film for a semiconductor of the present invention, a semiconductor device having a structure in which a semiconductor element and a wiring board are bonded can be manufactured.

(Warpage of semiconductor device)
The thermal stress generated between the semiconductor element and the wiring board is significant when the area difference between the semiconductor element and the wiring board is small, but the semiconductor device of the present invention relieves the thermal stress by using a low elastic modulus adhesive film. To ensure reliability. These effects appear very effectively when the area of the semiconductor element is 70% or more of the area of the wiring board. In such a semiconductor device in which the difference in area between the semiconductor element and the wiring board is small, the external connection terminals are often provided in an area.

(Adhesive layer volatiles)
In addition, as a characteristic of the adhesive film of the present invention, the volatile matter from the adhesive layer is heated in a process such as a process of thermocompression bonding the adhesive film to a desired position of the wiring board or a process of connecting by wire bonding. Can be suppressed.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.

  As an epoxy resin, a cresol novolac type epoxy resin having an epoxy equivalent of 210 (trade name: YDCN-700-10, manufactured by Toto Kasei Co., Ltd.) and a phenol resin (trade name: XLC-LL, manufactured by Mitsui Chemicals, Inc.) as an epoxy resin curing agent. ), 3-mercaptopropyltrimethoxysilane (Momentive Performance Materials Japan G.K., trade name: A-189) and 3- (N-phenyl) aminopropyltrimethoxysilane as silane coupling agents (Product name: Y9669, manufactured by Momentive Performance Materials Japan G.K.), curing accelerator (product name: 2PZ-CN, manufactured by Shikoku Kasei Kogyo Co., Ltd.), filler, average particle size of about 0.050 μm True spherical silica (product name: A composition consisting A050C), were stirred and mixed by adding cyclohexanone.

  An acrylic rubber containing 3.0% by mass of a glycidyl group-containing repeating unit (trade name: HTR-860P-3, weight average molecular weight 800,000, manufactured by Nagase Chemtech Co., Ltd.). Acrylate / ethyl acrylate / acrylonitrile / glycidyl methacrylate containing 39.4 / 29.3 / 30.3 / 3) and vacuum degassing. The thus-prepared varnish was applied onto a release-treated 38 μm thick polyethylene terephthalate film and dried by heating at 90 ° C. for 5 minutes and at 130 ° C. for 5 minutes to form a B-stage coating film having a thickness of 20 μm. And an adhesive film provided with a carrier film was produced. Similarly, each adhesive film shown in Table 1 was produced. Table 1 shows the parts by mass of Examples 1-3 and Comparative Examples 1-2.

  The ratio of the total mass A of the epoxy resin and the epoxy resin curing agent and the mass B of the epoxy group-containing (meth) acrylic copolymer (acrylic rubber) in the prepared adhesive composition is also shown in Table 1. .

(Die shear strength)
A semiconductor chip with an adhesive film (vertical 5 mm × width 5 mm) under the conditions of a temperature of 120 ° C., a pressure of 0.15 MPa, and a time of 1.0 seconds, a wiring substrate (organic substrate, resist is manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: AUS308 The upper and lower surfaces are approximately 6 μm in height, and cured at 150 ° C. for 1 hour to prepare a sample of the cured adhesive, and measured at a measurement temperature of 175 ° C. using a universal bond tester (manufactured by Dage).

(Elastic modulus)
The adhesive layer is laminated to a thickness of 160 μm and cut into a size of 4 mm in width and 40 mm in length. After curing at 175 ° C. for 5 hours, a tensile load was applied to the cured adhesive layer using a dynamic viscoelasticity measuring device (trade name DVE-V4, manufactured by Rheology), 10 mm between chucks, volume change rate. The measurement was performed in a temperature-dependent measurement mode in which measurement was performed at 5%, a frequency of 10 Hz, and a temperature increase rate of 3 to 10 ° C / min up to -50 to 300 ° C.

(Embedded evaluation)
A semiconductor chip with an adhesive film (length 7.5 mm × width 7.5 mm) was subjected to conditions of 120 ° C., 0.1 MPa, and 1 second under the conditions of a wiring board (organic substrate, resist manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: AUS308, A sample pasted on the upper surface with an unevenness of about 6 μm was prepared and cured on a hot plate (150 ° C., 6 hours). Thereafter, sealing is performed under the conditions of 175 ° C., 6.9 MPa, 120 seconds using a mold sealing material (manufactured by Hitachi Chemical Co., Ltd., trade name: CEL-9700HF) to produce an evaluation package, and a wiring board The filling property to the irregularities on the upper surface was observed. Observation was carried out with an ultrasonic microscope, and those with no gaps in the irregularities were marked with ◯, and those with certain gaps were marked with ×.

(Film appearance)
The produced varnish was applied onto a release-treated 38 μm thick polyethylene terephthalate film and dried by heating at 90 ° C. for 5 minutes and 130 ° C. for 5 minutes to form a B-stage coating film having a thickness of 20 μm. After forming, as a result of visually observing the appearance of the coating film surface, the case where an aggregate having a diameter of 1 mm or more was observed was evaluated as x, and the case where it was not observed was evaluated as ◯.

Claims (10)

  An adhesive sheet for a semiconductor having an adhesive layer, wherein the cured adhesive layer has a storage elastic modulus at 175 ° C. measured at a frequency of 10 Hz using a dynamic viscoelasticity measuring device of 3 MPa or less, An adhesive film for a semiconductor, wherein a die shear strength at 175 ° C. of a cured adhesive layer after the adhesive layer is thermocompression bonded to a wiring substrate and cured at 150 ° C. for 1 hour is 0.3 MPa or more. The adhesive layer is an adhesive composition including an epoxy resin, an epoxy resin curing agent, an epoxy group-containing (meth) acrylic copolymer, and a silane coupling agent, and the silane coupling agent is formula:

2. The adhesive film for a semiconductor according to claim 1, wherein n is an integer of 1 to 3, and R is composed of either a methoxy group (CH ₃ O—) or a methyl group (CH ₃ —).   The adhesive film for a semiconductor according to claim 1, wherein the adhesive layer has a thickness of 3 to 40 μm.   The epoxy group-containing (meth) acrylic copolymer has a glass transition temperature (Tg) of −50 to 30 ° C. and contains 0.5 to 3.0% by mass of an epoxy group-containing repeating unit. The adhesive film for semiconductor according to any one of claims 1 to 3, wherein is a copolymer of 100,000 or more.   The ratio B / (A + B) between the total mass A of the epoxy resin and the epoxy resin curing agent and the mass B of the epoxy group-containing (meth) acrylic copolymer is 0.70 to 0.90. The adhesive film for semiconductors as described in any one of 1-4.   6. The adhesive composition according to claim 1, wherein the adhesive composition further comprises 10 to 30 parts by mass of an inorganic filler having an average particle diameter of 0.01 to 0.1 μm with respect to 100 parts by mass of the resin. The adhesive film for semiconductors as described.   The adhesive film for a semiconductor according to claim 1, wherein the inorganic filler is spherical.   The adhesive film for a semiconductor according to any one of claims 1 to 7, wherein the adhesive layer contains a silica filler.   A dicing tape-integrated adhesive film for semiconductors, wherein the semiconductor adhesive film according to any one of claims 1 to 8 and a dicing tape are integrated.   The semiconductor device which has a structure which adhere | attached the semiconductor element and the wiring board using the adhesive film for semiconductors as described in any one of Claims 1-9.