JP2016177861A5 - - Google Patents
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- JP2016177861A5 JP2016177861A5 JP2016055360A JP2016055360A JP2016177861A5 JP 2016177861 A5 JP2016177861 A5 JP 2016177861A5 JP 2016055360 A JP2016055360 A JP 2016055360A JP 2016055360 A JP2016055360 A JP 2016055360A JP 2016177861 A5 JP2016177861 A5 JP 2016177861A5
- Authority
- JP
- Japan
- Prior art keywords
- peg
- bearing surface
- near field
- air bearing
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000009792 diffusion process Methods 0.000 claims 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 239000010955 niobium Substances 0.000 claims 6
- 239000010948 rhodium Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N Hafnium Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N Rhenium Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 3
- 239000005092 Ruthenium Substances 0.000 claims 3
- 229910052735 hafnium Inorganic materials 0.000 claims 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 3
- 229910052741 iridium Inorganic materials 0.000 claims 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- 229910052702 rhenium Inorganic materials 0.000 claims 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 229910052720 vanadium Inorganic materials 0.000 claims 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium(0) Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 3
- 229910052727 yttrium Inorganic materials 0.000 claims 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 3
- 229910052726 zirconium Inorganic materials 0.000 claims 3
- 229910052689 Holmium Inorganic materials 0.000 claims 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N Neodymium Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 2
- 229910052770 Uranium Inorganic materials 0.000 claims 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 2
Claims (5)
- 空気軸受面（ＡＢＳ）を有する装置であって、
書込極と、
ペグおよびディスクを有する近接場トランスデューサ（ＮＦＴ）とを備え、
前記ペグは、前記装置の前記空気軸受面に位置し、さらに、
前記近接場トランスデューサの前記ディスクに隣接して配置されているヒートシンクと、
前記装置の前記空気軸受面において前記近接場トランスデューサの前記ペグに隣接して配置されている誘電体ギャップと、
前記書込極と、前記誘電体ギャップ、前記ディスク、および前記ヒートシンクとの間に配置されている適合拡散バリア層とを備え、
前記適合拡散バリア層は、１３５度以下の少なくとも１つの角度を形成している、装置。 - 前記適合拡散バリア層は、モリブデン（Ｍｏ）、タンタル（Ｔａ）、ニオブ（Ｎｂ）、ハフニウム（Ｈｆ）、ネオジム（Ｎｄ）、ホルミウム（Ｈｏ）、タングステン（Ｗ）、イリジウム（Ｉｒ）、ロジウム（Ｒｈ）、ルテニウム（Ｒｕ）、レニウム（Ｒｅ）、チタン（Ｔｉ）、ジルコニウム（Ｚｒ）、ニッケル（Ｎｉ）、ウラン（Ｕ）、イットリウム（Ｙ）、バナジウム（Ｖ）、またはこれらの組み合わせを含む、請求項１に記載の装置。
- 前記適合拡散バリア層は、ルテニウム（Ｒｕ）、イリジウム（Ｉｒ）、タンタル（Ｔａ）、ジルコニウム（Ｚｒ）、ニオブ（Ｎｂ）、ハフニウム（Ｈｆ）、またはこれらの組み合わせを含む、請求項１に記載の装置。
- 空気軸受面（ＡＢＳ）を有する装置であって、
書込極と、
ペグおよびディスクを有する近接場トランスデューサ（ＮＦＴ）とを備え、
前記ペグは、前記装置の前記空気軸受面に位置し、さらに、
前記近接場トランスデューサの前記ディスクに隣接して配置されているヒートシンクと、
前記装置の前記空気軸受面において前記近接場トランスデューサの前記ペグに隣接して配置されている誘電体ギャップと、
前記書込極と、前記誘電体ギャップ、前記ディスク、および前記ヒートシンクとの間に配置されている適合拡散バリア層とを備え、
前記適合拡散バリア層は、１１０度以下の少なくとも１つの角度を形成しており、かつ、モリブデン（Ｍｏ）、タンタル（Ｔａ）、ニオブ（Ｎｂ）、ハフニウム（Ｈｆ）、ネオジム（Ｎｄ）、ホルミウム（Ｈｏ）、タングステン（Ｗ）、イリジウム（Ｉｒ）、ロジウム（Ｒｈ）、ルテニウム（Ｒｕ）、レニウム（Ｒｅ）、チタン（Ｔｉ）、ジルコニウム（Ｚｒ）、ニッケル（Ｎｉ）、ウラン（Ｕ）、イットリウム（Ｙ）、バナジウム（Ｖ）、またはこれらの組み合わせを含む、装置。 - 空気軸受面（ＡＢＳ）を有する装置であって、
書込極と、
ペグおよびディスクを有する近接場トランスデューサ（ＮＦＴ）とを備え、
前記ペグは、前記装置の前記空気軸受面に位置し、さらに、
前記近接場トランスデューサの前記ディスクに隣接して配置されているヒートシンクと、
前記装置の前記空気軸受面において前記近接場トランスデューサの前記ペグに隣接して配置されている誘電体ギャップと、
前記書込極と、前記誘電体ギャップ、前記ディスク、および前記ヒートシンクとの間に配置されている適合拡散バリア層とをさらに備え、
前記適合拡散バリア層は、レニウム（Ｒｅ）、バナジウム（Ｖ）、またはこれらの組み合わせを含む、装置。
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562136555P | 2015-03-22 | 2015-03-22 | |
| US62/136,555 | 2015-03-22 | ||
| US201562167314P | 2015-05-28 | 2015-05-28 | |
| US62/167,314 | 2015-05-28 | ||
| US15/060,914 | 2016-03-04 | ||
| US15/060,914 US9792931B2 (en) | 2015-03-22 | 2016-03-04 | Devices including a difussion barrier layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016177861A JP2016177861A (ja) | 2016-10-06 |
| JP2016177861A5 true JP2016177861A5 (ja) | 2019-04-25 |
Family
ID=56925499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016055360A Pending JP2016177861A (ja) | 2015-03-22 | 2016-03-18 | 空気軸受面を有する装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US9792931B2 (ja) |
| JP (1) | JP2016177861A (ja) |
| KR (1) | KR101834276B1 (ja) |
| CN (1) | CN106024019B (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9281002B2 (en) | 2013-06-24 | 2016-03-08 | Seagate Technology Llc | Materials for near field transducers and near field transducers containing same |
| US9697856B2 (en) | 2013-12-06 | 2017-07-04 | Seagate Techology LLC | Methods of forming near field transducers and near field transducers formed thereby |
| WO2016077198A1 (en) | 2014-11-11 | 2016-05-19 | Seagate Technology Llc | Devices including a diffusion barrier layer |
| US9822444B2 (en) * | 2014-11-11 | 2017-11-21 | Seagate Technology Llc | Near-field transducer having secondary atom higher concentration at bottom of the peg |
| US9792931B2 (en) * | 2015-03-22 | 2017-10-17 | Seagate Technology Llc | Devices including a difussion barrier layer |
| US9852748B1 (en) * | 2015-12-08 | 2017-12-26 | Seagate Technology Llc | Devices including a NFT having at least one amorphous alloy layer |
| US10121496B1 (en) * | 2017-02-23 | 2018-11-06 | Seagate Technology Llc | Heat-assisted magnetic recording head having peg coupler and plasmonic pad |
| US10839832B1 (en) | 2019-12-30 | 2020-11-17 | Western Digital Technologies, Inc. | MAMR recording head with high damping trailing shield seed layer |
| US11380354B2 (en) * | 2020-04-22 | 2022-07-05 | Seagate Technology Llc | Heat-assisted magnetic recording head having near-field transducer with sunken plasmonic plate |
| US11798581B1 (en) | 2021-04-02 | 2023-10-24 | Seagate Technology Llc | Heat-assisted magnetic recording head with nanoparticles |
| US11646058B1 (en) | 2022-03-30 | 2023-05-09 | Seagate Technology Llc | Heat-assisted magnetic recording head with a heat sink and a diffusion barrier |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7002228B2 (en) | 2003-02-18 | 2006-02-21 | Micron Technology, Inc. | Diffusion barrier for improving the thermal stability of MRAM devices |
| US7262936B2 (en) | 2004-03-01 | 2007-08-28 | Hitachi Global Storage Technologies Netherlands, B.V. | Heating device and magnetic recording head for thermally-assisted recording |
| US7623319B2 (en) * | 2004-11-30 | 2009-11-24 | Hitachi Global Storage Technologies Netherlands B.V. | Electrical connection structure for magnetic heads and method for making the same |
| US20070069383A1 (en) | 2005-09-28 | 2007-03-29 | Tokyo Electron Limited | Semiconductor device containing a ruthenium diffusion barrier and method of forming |
| US7791839B2 (en) | 2006-09-14 | 2010-09-07 | Hitachi Global Storage Technologies Netherlands B.V. | Thermally-assisted perpendicular magnetic recording system with write pole surrounding an optical channel and having recessed pole tip |
| JP2008146798A (ja) | 2006-12-13 | 2008-06-26 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッドスライダ |
| US8289650B2 (en) | 2007-09-19 | 2012-10-16 | Seagate Technology Llc | HAMR recording head having a sloped wall pole |
| JP4462346B2 (ja) | 2007-12-28 | 2010-05-12 | Ｔｄｋ株式会社 | 熱アシスト磁気ヘッド |
| US8331205B2 (en) | 2008-11-25 | 2012-12-11 | Seagate Technology Llc | Sloped pole for recording head with waveguide |
| US8472286B2 (en) * | 2008-12-31 | 2013-06-25 | HGST Netherlands B.V. | Near field transducer having main body and wings extending therefrom and only electrically coupled thereby |
| US8451555B2 (en) | 2009-02-24 | 2013-05-28 | Seagate Technology Llc | Recording head for heat assisted magnetic recording |
| US8810962B2 (en) | 2009-06-05 | 2014-08-19 | Headway Technologies, Inc. | Insertion under read shield for improved read gap actuation in dynamic flying height |
| US8213272B2 (en) | 2009-06-11 | 2012-07-03 | Tdk Corporation | Multilayered waveguide having protruded light-emitting end |
| US8102736B2 (en) | 2009-07-01 | 2012-01-24 | Tdk Corporation | Near-field light generator comprising waveguide with inclined end surface |
| US8934198B2 (en) * | 2010-02-23 | 2015-01-13 | Seagate Technology Llc | Recording head including NFT and heatsink |
| US8842391B2 (en) * | 2010-02-23 | 2014-09-23 | Seagate Technology Llc | Recording head including a near field transducer |
| US8339740B2 (en) | 2010-02-23 | 2012-12-25 | Seagate Technology Llc | Recording head for heat assisted magnetic recording with diffusion barrier surrounding a near field transducer |
| US9224416B2 (en) * | 2012-04-24 | 2015-12-29 | Seagate Technology Llc | Near field transducers including nitride materials |
| US8223597B2 (en) | 2010-06-22 | 2012-07-17 | Tdk Corporation | Thermally assisted head having reflection mirror for propagating light |
| US8351151B2 (en) | 2010-11-02 | 2013-01-08 | Hitachi Global Storage Technologies Netherlands B.V. | Thermally assisted magnetic write head employing a near field transducer (NFT) having a diffusion barrier layer between the near field transducer and a magnetic lip |
| US8553505B2 (en) | 2010-11-24 | 2013-10-08 | HGST Netherlands B.V. | Thermally assisted magnetic write head employing a plasmonic antenna comprising an alloyed film to improve the hardness and manufacturability of the antenna |
| US9053737B2 (en) * | 2010-12-22 | 2015-06-09 | Seagate Technology Llc | Heat assisted magnetic recording devices |
| US8565049B1 (en) * | 2012-06-26 | 2013-10-22 | Western Digital (Fremont), Llc | Method and system for reducing thermal protrusion of an NFT |
| US8945731B2 (en) * | 2012-06-29 | 2015-02-03 | Seagate Technology Llc | Interlayer for device including NFT and cladding layers |
| US9047908B2 (en) | 2013-04-23 | 2015-06-02 | HGST Netherlands B.V. | Heat-assisted magnetic recording (HAMR) head with diffusion barrier between waveguide core and write pole lip |
| KR101741617B1 (ko) | 2013-06-24 | 2017-05-30 | 시게이트 테크놀로지 엘엘씨 | 적어도 하나의 접착층을 포함하는 디바이스들 및 접착층들을 형성하는 방법 |
| US8976634B2 (en) * | 2013-06-24 | 2015-03-10 | Seagate Technology Llc | Devices including at least one intermixing layer |
| US9099117B2 (en) * | 2013-06-24 | 2015-08-04 | Seagate Technology Llc | Near-field transducer peg encapsulation |
| WO2016077198A1 (en) * | 2014-11-11 | 2016-05-19 | Seagate Technology Llc | Devices including a diffusion barrier layer |
| US9449625B1 (en) * | 2014-12-24 | 2016-09-20 | Western Digital (Fremont), Llc | Heat assisted magnetic recording head having a plurality of diffusion barrier layers |
| US9792931B2 (en) * | 2015-03-22 | 2017-10-17 | Seagate Technology Llc | Devices including a difussion barrier layer |
-
2016
- 2016-03-04 US US15/060,914 patent/US9792931B2/en active Active
- 2016-03-18 JP JP2016055360A patent/JP2016177861A/ja active Pending
- 2016-03-18 CN CN201610157325.XA patent/CN106024019B/zh active Active
- 2016-03-21 KR KR1020160033543A patent/KR101834276B1/ko active IP Right Grant
-
2017
- 2017-10-13 US US15/783,164 patent/US10192574B2/en active Active
-
2019
- 2019-01-29 US US16/260,910 patent/US10580440B2/en active Active
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