JP2016146505A - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
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- JP2016146505A JP2016146505A JP2016079117A JP2016079117A JP2016146505A JP 2016146505 A JP2016146505 A JP 2016146505A JP 2016079117 A JP2016079117 A JP 2016079117A JP 2016079117 A JP2016079117 A JP 2016079117A JP 2016146505 A JP2016146505 A JP 2016146505A
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- 239000000758 substrate Substances 0.000 title claims abstract description 257
- 238000003672 processing method Methods 0.000 title claims description 16
- 238000006884 silylation reaction Methods 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims abstract description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 48
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 47
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000007788 liquid Substances 0.000 claims description 146
- 238000000034 method Methods 0.000 claims description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 45
- 239000001301 oxygen Substances 0.000 claims description 45
- 229910052760 oxygen Inorganic materials 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 15
- XCOBLONWWXQEBS-KPKJPENVSA-N N,O-bis(trimethylsilyl)trifluoroacetamide Chemical compound C[Si](C)(C)O\C(C(F)(F)F)=N\[Si](C)(C)C XCOBLONWWXQEBS-KPKJPENVSA-N 0.000 claims description 6
- MSPCIZMDDUQPGJ-UHFFFAOYSA-N N-methyl-N-(trimethylsilyl)trifluoroacetamide Chemical compound C[Si](C)(C)N(C)C(=O)C(F)(F)F MSPCIZMDDUQPGJ-UHFFFAOYSA-N 0.000 claims description 6
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 claims description 6
- JOOMLFKONHCLCJ-UHFFFAOYSA-N N-(trimethylsilyl)diethylamine Chemical compound CCN(CC)[Si](C)(C)C JOOMLFKONHCLCJ-UHFFFAOYSA-N 0.000 claims description 5
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 claims description 5
- CSRZQMIRAZTJOY-UHFFFAOYSA-N trimethylsilyl iodide Substances C[Si](C)(C)I CSRZQMIRAZTJOY-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 29
- 239000010408 film Substances 0.000 description 126
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 55
- 229910001873 dinitrogen Inorganic materials 0.000 description 52
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 47
- 230000000903 blocking effect Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 20
- 239000011261 inert gas Substances 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 238000010586 diagram Methods 0.000 description 17
- 239000011550 stock solution Substances 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 11
- 238000002156 mixing Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000011068 loading method Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000011272 standard treatment Methods 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910008284 Si—F Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- -1 MTMSA Chemical compound 0.000 description 1
- YKFRUJSEPGHZFJ-UHFFFAOYSA-N N-trimethylsilylimidazole Chemical compound C[Si](C)(C)N1C=CN=C1 YKFRUJSEPGHZFJ-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- LWFWUJCJKPUZLV-UHFFFAOYSA-N n-trimethylsilylacetamide Chemical compound CC(=O)N[Si](C)(C)C LWFWUJCJKPUZLV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- SIOVKLKJSOKLIF-HJWRWDBZSA-N trimethylsilyl (1z)-n-trimethylsilylethanimidate Chemical compound C[Si](C)(C)OC(/C)=N\[Si](C)(C)C SIOVKLKJSOKLIF-HJWRWDBZSA-N 0.000 description 1
- 210000002845 virion Anatomy 0.000 description 1
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Abstract
【解決手段】基板処理装置1では、酸化膜除去部4にて基板9の一の主面上のシリコン酸化膜が除去された後、シリル化処理部6にてシリル化材料を付与して、当該主面に対してシリル化処理が施される。これにより、シリコン酸化膜の除去後、シリコンゲルマニウム膜の形成までのQタイムを長くするとともに、シリコンゲルマニウム膜の形成におけるプリベイクの温度を低くすることができる。
【選択図】図1
Description
4 酸化膜除去部
5 処理液供給部
6,6a シリル化処理部
7 処理ユニット
8,8a,8b 蒸気処理部
9 基板
31 センターロボット
43,72 除去液ノズル
44,73 リンス液ノズル
71 スピンチャック
81 ホットプレート
S12,S13,S15 ステップ
請求項2に記載の発明は、請求項1に記載の基板処理方法であって、前記a)工程が、a1)前記シリコン酸化膜を除去する除去液を前記主面に付与する工程を備え、前記a1)工程が、酸素濃度が100ppm以下に調整された雰囲気のもとで実行される。
請求項4に記載の発明は、請求項1ないし3のいずれかに記載の基板処理方法であって、前記b)工程において、シリル化材料であるTMSI、BSTFA、BSA、MSTFA、TMSDMA、TMSDEA、MTMSA、TMCS、または、HMDSが前記主面に付与される。
Claims (3)
- シリコン基板におけるシリコンゲルマニウム膜の形成の前工程として、前記シリコン基板を処理する基板処理方法であって、
a)シリコン基板の一の主面上のシリコン酸化膜を除去する工程と、
b)シリル化材料であるTMSI、BSTFA、BSA、MSTFA、TMSDMA、TMSDEA、MTMSA、TMCS、または、HMDSを付与して前記主面に対してシリル化処理を施す工程と、
を備えることを特徴とする基板処理方法。 - 請求項1に記載の基板処理方法であって、
前記a)工程が、
a1)前記シリコン酸化膜を除去する除去液を前記主面に付与する工程と、
a2)前記主面にリンス液を付与する工程と、
を備え、
前記除去液および前記リンス液の少なくとも一方における酸素濃度が20ppb以下に低減されていることを特徴とする基板処理方法。 - 請求項1または2に記載の基板処理方法であって、
前記シリコン基板においてトランジスタ用のパターンが形成されていることを特徴とする基板処理方法。
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JP2016079117A JP6216404B2 (ja) | 2016-04-11 | 2016-04-11 | 基板処理方法 |
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JP2016079117A JP6216404B2 (ja) | 2016-04-11 | 2016-04-11 | 基板処理方法 |
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JP2011187415A Division JP5917861B2 (ja) | 2011-08-30 | 2011-08-30 | 基板処理方法 |
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JP2016146505A true JP2016146505A (ja) | 2016-08-12 |
JP6216404B2 JP6216404B2 (ja) | 2017-10-18 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10256215A (ja) * | 1997-01-10 | 1998-09-25 | Toshiba Corp | 半導体被処理面の調製方法 |
JP2003077844A (ja) * | 2001-09-03 | 2003-03-14 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2005142478A (ja) * | 2003-11-10 | 2005-06-02 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US20060199399A1 (en) * | 2005-02-22 | 2006-09-07 | Muscat Anthony J | Surface manipulation and selective deposition processes using adsorbed halogen atoms |
JP2010114414A (ja) * | 2008-06-16 | 2010-05-20 | Toshiba Corp | 半導体基板の表面処理方法 |
JP2011071169A (ja) * | 2009-09-24 | 2011-04-07 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
-
2016
- 2016-04-11 JP JP2016079117A patent/JP6216404B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10256215A (ja) * | 1997-01-10 | 1998-09-25 | Toshiba Corp | 半導体被処理面の調製方法 |
JP2003077844A (ja) * | 2001-09-03 | 2003-03-14 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2005142478A (ja) * | 2003-11-10 | 2005-06-02 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US20060199399A1 (en) * | 2005-02-22 | 2006-09-07 | Muscat Anthony J | Surface manipulation and selective deposition processes using adsorbed halogen atoms |
JP2010114414A (ja) * | 2008-06-16 | 2010-05-20 | Toshiba Corp | 半導体基板の表面処理方法 |
JP2011071169A (ja) * | 2009-09-24 | 2011-04-07 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
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