JP2016146351A - Organic light emitting display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a novel and improved organic light emitting display device, capable of improving display quality by preventing a pixel defining film that surrounds an edge portion of a pixel electrode from falling down.SOLUTION: An organic light emitting display device includes: a flattening film covering a plurality of thin film transistors formed on a substrate; a plurality of via holes 220 each of which exposes any one of source and drain electrodes of each of the plurality of thin film transistors while penetrating through the flattening film; a plurality of pixel electrodes 230 electrically connected to the respective thin film transistors through the via holes; a pixel defining film 240 formed on the flattening film so as to cover each via hole and the edge of each pixel electrode; and an organic film which is interposed between the pixel electrode and a counter electrode to have a light emitting layer. Each via hole is formed to be farthest from the boundary between a pixel defining film and a light emitting portion 231 which is not covered by the pixel defining film of each pixel electrode which is adjacently disposed around each via hole.SELECTED DRAWING: Figure 3

Description

  The present invention relates to an organic light emitting display device.

  The organic light emitting display device has a structure including an organic film including a pixel electrode, a counter electrode, and a light emitting layer positioned between the two electrodes. By applying a voltage to the pixel electrode and the counter electrode, an electron is displayed. It is a self-luminous display device that emits light by recombination of holes and holes in the light emitting layer.

  Such an organic light emitting display device is not only lighter and thinner than a CRT (Cathode Ray Tube) monitor or LCD (Liquid Crystal Display), but also has a wide viewing angle, fast response speed, and low power consumption. Due to its advantages, it is attracting attention as a next-generation display device.

  In addition, the organic light emitting display device is divided into a passive drive (Passive Matrix: PM) method and an active drive (Active Matrix: AM) method, depending on the drive method, but the active drive type organic light emitting display device is more expensive. It is advantageous in improving resolution, high image quality, low power consumption and long life characteristics.

  In the active driving type organic light emitting display device, a thin film transistor (TFT) provided on a substrate and a pixel electrode are electrically connected through a via hole. At this time, a pixel definition layer (PDL) surrounds the edge of each pixel electrode and defines a light emitting region.

JP 2005-158708 A

  However, there is a problem that the pixel definition film surrounding the edge of the pixel electrode is depressed due to the step of the via hole formed near the pixel electrode.

  Therefore, the present invention has been made in view of the above problems, and an object of the present invention is to prevent the pixel definition film surrounding the edge of the pixel electrode from being depressed and to improve display quality. It is an object of the present invention to provide a new and improved organic light emitting display device capable of satisfying the requirements.

  In order to solve the above problems, according to an aspect of the present invention, a substrate, a plurality of thin film transistors formed on the substrate, a planarization film covering the plurality of thin film transistors, and the planarization film are penetrated. A plurality of via holes exposing one of source and drain electrodes of the plurality of thin film transistors, and a plurality of pixel electrodes formed on the planarization film and electrically connected to the thin film transistors through the via holes. A pixel defining film formed on the planarizing film so as to cover each via hole and an edge of each pixel electrode; a counter electrode disposed opposite to the pixel electrode; and the pixel electrode; An organic film including a light emitting layer interposed between the counter electrodes, and each via hole is arranged adjacent to the periphery of each via hole. Wherein the light emitting portion that is not covered by the pixel defining layer, the organic light emitting display device, characterized in that is furthest it forms the boundary between the pixel defining layer is provided.

  The distance between each via hole and the boundary of the light emitting portion of each pixel electrode arranged adjacent to the periphery of each via hole may be constant.

  In addition, the light emitting unit may not be arranged on a straight line connecting between adjacent via holes.

  The surface of the planarization film may be formed entirely flat.

  In addition, the height of the surface of the pixel definition film formed on the via hole may be lower than the height of the surface of the pixel electrode formed on the light emitting unit.

  The pixel defining layer may have a thickness of 500 mm to 5000 mm.

  The light emitting layer may be formed on the light emitting unit.

  In addition, the light emitting portions of the pixel electrodes may be formed in a regular pattern.

  The pixel electrode may be a reflective electrode.

  In addition, a buffer film may be further provided on the substrate.

  In order to solve the above problems, according to another aspect of the present invention, a substrate, a plurality of thin film transistors formed on one surface of the substrate, a planarization film covering the plurality of thin film transistors, and the planarization A plurality of via holes that expose one of source and drain electrodes of the plurality of thin film transistors while penetrating the passivation film, and are formed on the planarization film and electrically connected to the thin film transistors through the via holes. And formed on the planarization film so as to cover the plurality of pixel electrodes patterned along the first direction and the second direction intersecting perpendicularly to each other, and the via holes and the edges of the pixel electrodes. A pixel defining film, a counter electrode disposed opposite to the pixel electrode, and an organic film including a light emitting layer interposed between the pixel electrode and the counter electrode. In addition, each via hole is a pixel defining film of a light emitting part that is not covered by a pixel defining film of the pixel electrode arranged adjacent to each other along the first direction and the second direction around each via hole. An organic light emitting display device characterized in that the organic light emitting display device is formed farthest from the boundary between the two is provided.

  The light emitting portions of the pixel electrodes may be formed in a regular pattern along the first direction and the second direction.

  Each via hole has a position where a straight line passing between the two light emitting portions adjacent to each via hole in the first direction intersects with a straight line passing between the two light emitting portions adjacent in the second direction. May be formed.

  In addition, each via hole includes a straight line passing through the center of a straight line connecting two light emitting units adjacent to each via hole in the first direction, and a straight line center connecting two light emitting units adjacent in the second direction. It may be formed at a position where a straight line passing through crosses.

  In addition, the distance between each via hole and the boundary of the light emitting portion of each pixel electrode arranged adjacent to the periphery of each via hole may be constant.

  In addition, on the first straight line connecting each via hole to the via hole adjacent to the first direction adjacent to the via hole and on the second straight line connecting the via hole adjacent to the second direction of the via hole, The light emitting unit may not be arranged.

  The surface of the planarization film may be formed entirely flat.

  In addition, the height of the surface of the pixel definition film formed on the via hole may be lower than the height of the surface of the pixel electrode formed on the light emitting unit.

  The pixel defining layer may have a thickness of 500 mm to 5000 mm.

  The light emitting layer may be formed on the light emitting unit.

  In addition, the via hole connection portion of the pixel electrode may have a pattern having the same shape.

  The pixel electrode may be a reflective electrode.

  In addition, a buffer film may be further provided on the substrate.

  As described above, according to the present invention, first, even when the thickness of the thin pixel defining film near the via hole collapses, the original thickness of the pixel defining film is maintained at the boundary of the light emitting portion. it can. Second, it is possible to accurately define the light emitting region. Third, display quality can be improved when the pattern of the light emitting layer is formed by a transfer method using a laser or vacuum deposition.

1 is a schematic cross-sectional view of an organic light emitting display device according to an embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of an organic light emitting display device according to another embodiment of the present invention. It is a top view which shows a part of display part shown in FIG. 1 or FIG. 2 in detail. FIG. 4 is a cross-sectional view taken along line AA in FIG. 3. FIG. 5 is a cross-sectional view in which an organic film and a counter electrode are added on the pixel electrode of FIG. 4. FIG. 4 is a cross-sectional view schematically showing an arrangement relationship between light emitting portions and via holes of the pixel electrode of FIG. 3.

  Exemplary embodiments of the present invention will be described below in detail with reference to the accompanying drawings. In addition, in this specification and drawing, about the component which has the substantially same function structure, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol.

  FIG. 1 is a cross-sectional view schematically illustrating an organic light emitting display device according to an embodiment of the present invention.

  As shown in FIG. 1, in the organic light emitting display device according to the present embodiment, a display unit 20 is provided on a substrate 10.

  Further, a sealing substrate 30 for sealing the display unit 20 is provided on the substrate 10.

  The sealing substrate 30 blocks the penetration of outside air and moisture into the display unit 20.

  The edges of the substrate 10 and the sealing substrate 30 are joined by the sealing material 40, and the space 25 between the substrate 10 and the sealing substrate 30 is sealed. A hygroscopic material and a filler can be located in the space 25.

  Further, instead of the sealing substrate 30 and the sealing material 40, the display unit 20 may be protected from the outside air by forming a thin film sealing film 50 on the organic light emitting display unit 20 as shown in FIG. The sealing film 50 has a structure in which, for example, a film made of an inorganic material such as silicon oxide or silicon nitride and a film made of an organic material such as epoxy or polyimide are alternately formed. The structure of the sealing film 50 is not necessarily limited to this, and any structure can be applied as long as it is a transparent thin-film sealing structure.

  3 is a plan view showing a part of the display unit 20 of FIG. 1 or 2 in more detail, FIG. 4 is a cross-sectional view taken along line AA of FIG. 3, and FIG. FIG. 6 is a cross-sectional view in which an organic film 250 and a counter electrode 260 are added on the pixel electrode 230, and FIG. FIG.

  3 to 6, a plurality of thin film transistors TR are provided on the substrate 10, and the thin film transistors TR are electrically connected to the pixel electrodes 230 through the via holes 220.

Substrate 10 may be formed by of a transparent glass material mainly composed of SiO _2. Of course, an opaque material is also possible, and it can be formed of other materials such as a plastic material.

  A buffer film 211 is formed on the upper surface of the substrate 10, and a thin film transistor TR is formed on the buffer film 211.

  The buffer film 211 serves to prevent impure elements from penetrating and to flatten the surface, and may be formed of various materials capable of performing such a role. For example, the buffer film 211 is formed of an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, or titanium nitride, an organic material such as polyimide, polyester, or acrylic, or a laminate thereof. Can be done. The buffer film 211 is not an essential component and may not be provided as necessary.

  Meanwhile, in FIG. 3 to FIG. 6, only one driving thin film transistor TR electrically connected to the pixel electrode 230 is displayed, but this is for convenience of explanation. A switching thin film transistor and a capacitor may be further provided. In addition, various wirings such as a scan line, a data line, and a driving line connected to the thin film transistor and the capacitor may be further included.

  The semiconductor active layer 212 may be made of an inorganic semiconductor such as amorphous silicon or polysilicon, but is not limited thereto, and an organic semiconductor or an oxide semiconductor can also be used. The semiconductor active layer 212 includes source and drain regions 212b and 212c, and a channel region 212a between them.

  A gate insulating film 213 is formed on the buffer film 211 so as to cover the semiconductor active layer 212, and a gate electrode 214 is formed on the gate insulating film 213.

  An interlayer insulating film 215 is formed on the gate insulating film 213 so as to cover the gate electrode 214, and a source electrode 216 and a drain electrode 217 are formed on the interlayer insulating film 215. The source region and the drain of the semiconductor active layer 212, respectively. The regions 212b and 212c are contacted through contact holes.

  The structure of the thin film transistor TR described above is not limited to the structure shown in FIGS. 3 to 6, and various types of thin film transistors can be applied. For example, the thin film transistor TR is formed with a top gate structure, but may be formed with a bottom gate structure in which the gate electrode 214 is disposed under the semiconductor active layer 212. Of course, all other thin film transistor structures that can be applied can be applied.

  A planarization film 218 is formed so as to cover the thin film transistor TR.

  The planarization film 218 is for reducing the level difference of the substrate 10 provided with a plurality of thin film transistors TR, but can be a single or a plurality of layers of insulating films whose upper surfaces are planarized. As the planarizing film 218, one or more substances selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenol resin can be used.

  Meanwhile, although not shown in FIGS. 3 to 6, a passivation film may be further provided on the source electrode 216 and the drain electrode 217.

  A via hole 220 is formed through the planarization film 218 to expose the drain electrode 217 of the thin film transistor TR. Through the via hole 220, the pixel electrode 230 formed in a predetermined pattern on the planarizing film 218 and the thin film transistor TR are electrically connected. Of course, the drawing shows that the pixel electrode 230 is connected to the drain electrode 217 of the thin film transistor TR, but this is an example, and the pixel electrode 230 is electrically connected to the source electrode 216 through the via hole 220. Can be done.

  The pixel electrode 230 is divided into a light emitting part 231 that is not covered by a pixel definition layer (PDL) 240 and pixel definition film forming parts 232 a and 232 b whose edges are covered by the pixel definition film 240. .

  The pixel definition film forming portions 232a and 232b may be divided into a via hole connecting portion 232b that connects the light emitting portion 231 and the via hole 220, and a remaining edge region 232a of the pixel electrode 230. As shown in FIG. 3, the via hole connection part 232 b according to the present embodiment is shown to have the same pattern, but the present invention is not limited to this.

  As described above, the pixel definition film 240 is formed on the planarization film 218 so as to cover the edge of each pixel electrode 230 electrically connected to the via hole 220.

  The pixel definition film 240 serves to define a pixel while covering the edge of the pixel electrode 230 with a predetermined thickness. In addition, by increasing the distance between the end of the pixel electrode 230 and a counter electrode 260 described later, the arc may be prevented from being generated at the end of the pixel electrode 230.

  An organic film 250 and a counter electrode 260 are sequentially formed on the pixel electrode 230.

  The organic layer 250 may be a low molecular or high molecular organic layer. When a low molecular organic film is used, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL) are used. An electron injection layer (EIL: Electron Injection Layer) is formed by laminating a single or composite structure, and usable organic materials include copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl). Various applications are possible including -N, N'-diphenyl-benzidine (NPB) and tris-8-hydroxyquinoline aluminum (Alq3).

  On the other hand, when the polymer organic film is used, only the hole transport layer (HTL) may be included in the direction of the pixel electrode 230 around the light emitting layer. For the hole transport layer (HTL), polyethylenedihydroxythiophene (PEDOT: Poly- (2,4) -Ethylene-Dihydroxythiophene) or polyaniline (PANI) can be used.

  At this time, the light emitting layer is formed independently for each of red, green, and blue pixels, and the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer are common layers, and the red, green, It can be commonly applied to blue pixels.

  On the other hand, FIG. 5 shows that the organic film 250 including the light emitting layer is formed only on the opening of the pixel electrode 230, but this is an example, and these common layers are like the counter electrode 260. , And can be formed to cover the entire pixel area. The organic film 250 including such a light emitting layer can form a normal color pattern by a vacuum deposition method, an ink jet printing method, a spin coating method, or a laser induced thermal imaging (LITI) method.

  In particular, when a light-emitting material formed on a donor film is transferred onto the pixel electrode 230 by a laser transfer method (LITI), if the pixel-defining film 240 surrounding the light-emitting portion 231 is thick, the pixel-defining film 240 The light emitting material is not smoothly transferred at the boundary between the light emitting portions 231 due to the high step formed at the boundary between the light emitting portions 231 and the light emitting portions 231.

  On the other hand, even if the light emitting layer is not formed by the laser transfer method described above, if the pixel defining film 240 is thick, it is difficult to manufacture a thin display which is a recent trend. Due to various circumstances as described above, it is desirable to form the pixel defining layer 240 as thin as possible.

  When the pixel defining layer 240 is formed to be thin, if the via hole 220 is formed too close to the edge of the pixel electrode 230, in other words, the boundary of the light emitting portion 231 of the pixel electrode 230, The pixel definition layer 240 formed on the pixel electrode 230 cannot maintain the required thickness, and the phenomenon of collapse to the via hole 220 occurs. If so, the boundary of the light emitting portion 231 of the pixel electrode 230 becomes unclear, and the overall flatness of the pixel is lowered. As a result, when the light emitting layer pattern is formed by the above-described transfer method using laser or vacuum deposition, the boundary of the light emitting layer pattern is broken, resulting in a problem that display quality is deteriorated.

  In order to solve the above-described problem, according to the organic light emitting display device according to the present embodiment, the via hole 220 extends from the boundary of the light emitting portion 231 of each pixel electrode 230 disposed adjacent to the periphery of the via hole 220. Formed farthest.

  6 does not show the pixel definition film 240 and the pixel definition film forming portions 232a and 232b surrounded by the pixel definition film 240 in FIG. 3, and the light emitting portions 231-1 and 231-2 of the pixel electrode 230 are omitted. , 231-3,. . . FIG. 6 is a plan view schematically showing the arrangement relationship between the via hole 220 and the via hole 220.

  Referring to FIGS. 3 and 6, each via hole 220 includes light emitting portions 231-1, 231-2, 231-3,... Of each pixel electrode 230 disposed adjacent to the periphery of the via hole 220. . . Formed farthest from.

  Specifically, the light emitting unit 231 pattern of each pixel electrode 230 is regularly arranged along a first direction (x direction) and a second direction (y direction) perpendicular to the first direction (x direction). In this case, each via hole 220 includes two light emitting units 231-1 and 231-2 disposed adjacent to each other along the first direction (x direction) around each via hole 220, and the via hole 220. It is formed farthest from the boundary between the two light emitting units 231-1 and 231-3 arranged adjacent to each other along the second direction (y direction).

  Specifically, as illustrated in FIG. 6, each via hole 220 includes two light emitting units 231-1 and 231 disposed adjacent to each other along the first direction (x direction) around each via hole 220. −2 and a straight line l2 passing between the two light emitting units 231-1 and 231-3 arranged adjacent to each other along the second direction (y direction) around the via hole 220. Can be formed at a position where and intersect.

  More specifically, as shown in FIG. 6, the straight lines 11 and 12 are two light emitting units 231-1 arranged adjacent to each other around the via hole 220 along the first direction (x direction). A straight line l1 passing through the center of a straight line connecting 1,231-2 and a straight line connecting two light emitting units 231-1 and 231-3 arranged adjacent to each other in the second direction (y direction). It can be described as a straight line l2 passing through the center.

  3 and 4, the distance d between each via hole 220 and the boundary of the light emitting portion 231 of each pixel electrode 230 disposed adjacent to the periphery of each via hole 220 is formed constant. It can be seen that the distance d is designed such that each via hole 220 is separated as much as possible from the boundary between the adjacent light emitting portions 231.

  Meanwhile, as shown in FIGS. 3 and 6, the organic light emitting display device according to the present embodiment includes a straight line B <b> 1 connecting each via hole 220 and the via hole 220 adjacent to the via hole 220 in the first direction (x direction). It can be seen that the light emitting portion 231 of the pixel electrode 230 is not disposed on the straight line B2-B2 connecting the −B1 and the via hole 220 adjacent in the second direction (y direction). This is because each via hole 220 is designed to be separated from the adjacent light emitting unit 231 as far as possible.

  Therefore, according to the organic light emitting display device according to the present embodiment, even if the thin pixel definition film 240 near the via hole 220 collapses, the pixel definition film 240 is originally formed at the boundary of the light emitting unit 231. Therefore, the light emitting region can be defined accurately. As a result, when the light emitting layer pattern is formed by the above-described transfer method using laser or vacuum deposition, the boundary of the light emitting layer pattern is clearly maintained and the overall flatness of the pixel is maintained, so that the display quality is improved. improves.

  Meanwhile, in the organic light emitting display device according to the present embodiment, the pixel defining layer 240 is formed to be thin. As an example, the thickness of the pixel defining film 240 of the present embodiment is desirably 500 mm or more and 5000 mm or less. When the thickness of the pixel definition film 240 is less than 500 mm, the thickness is excessively thin and it is difficult to define the pixel. When the thickness is greater than 5000 mm, the boundary between the pixel definition film 240 and the light emitting unit 231. This is because the transfer of the light emitting layer cannot be smoothly performed by the laser thermal transfer method due to the step formed by the above.

  Referring to FIG. 4, since the pixel definition film 240 is thin, the height h <b> 2 from the bottom surface of the substrate 10 to the pixel definition film 240 formed on the via hole 220 is from the bottom surface of the substrate 10 to the light emitting unit 231. It can be seen that the height to the surface of the pixel electrode 230 formed in (1) is lower than h1. This is because the pixel defining film 240 having a small thickness cannot sufficiently fill the step formed in the via hole 220. However, in the present embodiment, since the via hole 220 is sufficiently far from the boundary of the light emitting portion 231 of the pixel electrode 230, the pixel defining film 240 formed on the via hole 220 has a reduced thickness. It can be seen that the thickness of the pixel definition film 240 at the boundary of the light emitting portion 231 that is separated from the light emitting portion 231 by the predetermined distance d is maintained as it is.

  Meanwhile, in the organic light emitting display device according to the present embodiment, the pixel electrode 230 may function as an anode electrode, and the counter electrode 260 may function as a cathode electrode. Of course, the polarities of the pixel electrode 230 and the counter electrode 260 may be reversed.

  According to an embodiment of the present invention, the pixel electrode 230 may be a reflective electrode, and the counter electrode 260 may be a transparent electrode. Accordingly, the display unit 20 is a front-emitting type that realizes an image in the direction of the counter electrode 260.

For this reason, the pixel electrode 230 includes a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca and their compounds, and ITO having a high work function. (Indium
Tin Oxide), IZO (Indium Zinc Oxide), ZnO, or In ₂ O ₃ . The counter electrode 260 may be formed of a metal having a small work function, that is, Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, or an alloy thereof.

However, the present invention is not limited thereto, and the pixel electrode 230 may be a transparent electrode. In this case, it is sufficient that the pixel electrode 230 described above is made of ITO, IZO, ZnO, or In ₂ O ₃ having a high work function without a reflective film.

  On the other hand, since the components shown in the drawings can be enlarged or reduced for convenience of explanation, the present invention is not restricted by the size and shape of the components shown in the drawings. It will be appreciated that various modifications and other equivalent embodiments are possible. Therefore, the true technical protection scope of the present invention must be determined by the technical idea of the claims.

  The present invention is applicable to display related technical fields.

DESCRIPTION OF SYMBOLS 10 Substrate 20 Display part 30 Sealing substrate 40 Sealing material 50 Sealing film TR Thin film transistor 211 Buffer film 212 Semiconductor active layer 212a Channel region 212b, 212c Source / drain region 213 Gate insulating film 214 Gate electrode 215 Interlayer insulating film 216 Source electrode 217 Drain electrode 218 Planarization film 220 Via hole 230 Pixel electrode 231 Light emitting part 232a, 232b Pixel definition film forming part 240 Pixel definition film 250 Organic film 260 Counter electrode

Claims (12)

A substrate,
A plurality of thin film transistors formed on one surface of the substrate;
A planarization film covering the plurality of thin film transistors;
A plurality of via holes exposing one of the source and drain electrodes of the plurality of thin film transistors while penetrating the planarization film;
A plurality of pixel electrodes formed on the planarization layer, electrically connected to the thin film transistors through the via holes, and patterned along a first direction and a second direction intersecting each other vertically;
A pixel definition film formed in a single layer on the planarization film so as to cover each via hole and the edge of each pixel electrode;
A counter electrode disposed to face the pixel electrode;
An organic film including a light emitting layer interposed between the pixel electrode and the counter electrode,
The pixel defining layer is thicker than the organic layer,
The organic film is superimposed on a part of the upper surface of the pixel definition film,
The via hole exposes the outer electrode from the light emitting layer corresponding to the via hole of the source and drain electrodes,
Each via hole includes the pixel defining film of the light emitting unit that is not covered by the pixel defining film of the pixel electrode arranged adjacent to each other along the first direction and the second direction around each via hole. An organic light-emitting display device, wherein the organic light-emitting display device is regularly formed at positions where straight lines passing through the center between the boundaries of the two intersect.   The organic light emitting display device according to claim 1, wherein the light emitting part of each pixel electrode is formed in a regular pattern along the first direction and the second direction.   Each via hole has a straight line passing through the center of a straight line connecting two light emitting units adjacent in the first direction to the via hole, and a straight line connecting two light emitting units adjacent in the second direction. The organic light emitting display device according to claim 1, wherein the organic light emitting display device is formed at a position where a straight line passing therethrough intersects.   The distance between each via hole and the boundary of the light emitting portion of each pixel electrode arranged adjacent to the periphery of each via hole is constant. The organic light-emitting display device as described.   On the first straight line connecting each via hole to the via hole adjacent to the first direction adjacent to the via hole, and to the second straight line connecting the via hole adjacent to the second direction of the via hole, the light emission is performed. The organic light-emitting display device according to claim 1, wherein no part is arranged.   6. The organic light emitting display device according to claim 1, wherein a surface of the planarizing film is entirely flat.   The height of the surface of the pixel definition film formed on the via hole is formed lower than the height of the surface of the pixel electrode formed on the light emitting part. 2. The organic light emitting display device according to item 1.   8. The organic light emitting display device according to claim 1, wherein the pixel defining film has a thickness of 500 to 5000 mm. 9.   The organic light emitting display device according to claim 1, wherein the light emitting layer is formed on the light emitting unit.   10. The organic light emitting display device according to claim 1, wherein the via hole connection portion of the pixel electrode has a pattern having the same shape. 11.   The organic light emitting display device according to claim 1, wherein the pixel electrode is a reflective electrode. The organic light emitting display device according to claim 1, further comprising a buffer film on the substrate.

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