JP2005055821A - Electric optical apparatus and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electric optical apparatus and an electronic device surely forming a light emitting layer on a step on a pixel electrode formed by wires set in a lower part. <P>SOLUTION: An insulation member 40a composed of a hydrophilic material is formed in a region Z1 on the pixel electrode 34 and corresponding to a position where a metal frame 21GF for a gate electrode and an electrode 21C for gate connection are superposedly disposed and formed via a interlayer insulation film 32, and to an outer periphery part thereof, respectively. A hydrophilic insulation member 40b is formed in a region Z2 on the pixel electrode 34 and corresponding to a position where a power source wire metal frame VF and a signal metal frame 21CF are superposedly disposed and formed via the insulation film 32, and an outer periphery part thereof, respectively. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an electro-optical device and an electronic apparatus.

  2. Description of the Related Art Conventionally, there is an active matrix driving method as one of driving methods for a display display including an electro-optical element such as a liquid crystal element, an organic electroluminescence element, an electrophoretic element, and an electron emitting element. An active matrix drive type display display includes a top emission type display in which a drive transistor, a signal line, and a power line for controlling each pixel are arranged below the pixel electrode.

  FIG. 7 is a partial cross-sectional view of a conventional top emission type display. As shown in FIG. 7, below the pixel electrode 81A, a gate electrode 82G, a drain electrode 82D, a source electrode 82S, a signal line 83a, and a power supply line 83b constituting the driving transistor 82 are formed. The light emitted from the light emitting layer 84 formed on the pixel electrode 81A is emitted from the cathode electrode 81C formed at a position facing the pixel electrode 81A.

  As described above, the top emission type display can be provided with the electrodes 82G, 82D, and 82S of the driving transistor 82, the signal line 83a, and the power supply line 83b below the pixel electrode 81A. The aperture ratio can be increased.

  However, in this type of top emission type display, for example, the signal line 83a does not maintain good coverage of the pixel electrode 81A formed in the upper layer. In particular, in a display having a multilayer wiring structure as shown in FIG. 7, in the portion where the signal line 83a and the power supply line 83b are arranged in the upper and lower layers adjacent to each other, the pixel electrode 81A formed in the upper layer is provided. The step formed on the surface of the film becomes large.

  Accordingly, the film thickness of the light emitting layer 81 on the pixel electrode 81A varies, and as a result, the pixel electrode 81A and the cathode electrode 81C are short-circuited or the light emission characteristics are deteriorated. For example, in the region where the film thickness of the light emitting layer 84 indicated by Q in the drawing is small, dark spots may grow while carriers are injected into the light emitting layer 84 to cause light emission. Unevenness occurs, and the display quality deteriorates.

Therefore, an interlayer insulating film 85 is formed under the pixel electrode 81A, and the interlayer insulating film 85 is subjected to a reflow process so that the surface thereof is planarized so that the coverage of the pixel electrode 81A and the light emitting layer 84 is improved. Is known (for example, Patent Document 1).
JP 2001-56650 A

However, the pixel electrode 81A obtained by the reflow process may leave a level difference of about 0.5 μm, for example. However, in the organic electroluminescence display in which the light emitting layer 84 is made of a polymer organic material, the step on the pixel electrode 81A is required to be smaller than about 0.5 μm. Therefore, in an organic electroluminescence display in which the light emitting layer 84 is made of a polymer organic material, it is difficult to improve the required coverage of the pixel electrode 81A and the light emitting layer 84 even if reflow treatment is performed. As a result, in particular, in an organic electroluminescence display, since the film thickness of the light emitting layer 84 of each pixel varies, luminance unevenness occurs from pixel to pixel and display quality deteriorates.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide an electro-optical device and an electronic apparatus that reliably form a light emitting layer at a step on a pixel electrode caused by wiring formed below. It is to provide.

  The present invention includes a substrate, a light emitting layer formed above the substrate and emitting light according to a signal level of a data signal, and disposed between the substrate and the light emitting layer, and driven based on the data signal. A wiring layer in which wirings constituting a driving element for generating a signal are formed, and the driving signal output from the driving element is supplied to the light emitting layer, formed between the light emitting layer and the wiring layer. And an insulator provided at a peripheral portion of the electrode so as to define a pixel light emission region, wherein the electrode is a pixel light emission region in a region inside the insulator. And an insulating member made of a hydrophilic material.

  According to this, even when a step is generated on the electrode due to the wiring layer, the insulating member is provided in the region where the step is present, so that, for example, the light emitting layer made of a polymer organic material is securely adhered. Can be formed. Accordingly, it is possible to prevent a short circuit between the electrode and the electrode formed through the light emitting layer in the region having the step. In addition, since the light emitting layer can be reliably formed in a region having a step on the electrode, the thickness of the light emitting layer formed on the electrode can be made uniform accordingly. Furthermore, since the film thickness of the light emitting layer formed on the electrode can be made uniform, a region where the film thickness of the light emitting layer is small is gradually displayed in black so that the so-called dark spot is prevented from growing. be able to. As a result, the display quality of the electro-optical device can be improved. In addition, the yield of the electro-optical device can be improved.

In this electro-optical device, the insulating member may be formed on the electrode in a region corresponding to an edge portion of the wiring.
According to this, even if the region corresponding to the electrode in the region corresponding to the edge portion of the wiring is raised compared to the other region, the region corresponding to the electrode is made of, for example, a polymer organic material. The configured light emitting layer can be formed in close contact with each other. From this, the yield of the electro-optical device can be improved.

In this electro-optical device, the insulating member may be formed on the electrode in a region corresponding to a peripheral portion of a region including the wiring constituting the driving element.
According to this, even if the region corresponding to the electrode in the region corresponding to the peripheral portion of the region including the wiring constituting the drive element is raised compared to the other regions, the region corresponding to the peripheral portion In addition, for example, a light emitting layer made of a polymer organic material can be reliably adhered and formed. From this, the yield of the electro-optical device can be improved.

In this electro-optical device, the insulating member may be made of silicon dioxide, a hydrophilic polymer material, or an SOG film.
According to this, the insulating member is made of any one of silicon dioxide, a hydrophilic polymer material, or SOG, so that a step formed on the electrode by the wiring formed in the wiring layer is formed. A light emitting layer can be formed reliably. In addition, the thickness of the light emitting layer formed on the electrode can be made uniform.

In this electro-optical device, the light emitted from the light emitting layer may be emitted from the side facing the substrate.
According to this, the light emitted from the light emitting layer is emitted from the side facing the substrate.
In a so-called top emission type electro-optical device, the light emitting layer can be reliably formed in a region where a step formed on the electrode is formed by the wiring formed in the wiring layer. In addition, the thickness of the light emitting layer formed on the electrode can be made uniform.

In the electro-optical device, the light emitting layer may be made of an organic material.
According to this, in the electro-optical device in which the light emitting layer is made of an organic material, for example, the light emitting layer can be reliably formed in a region where a step formed on the electrode is formed. Moreover, the film thickness of the light emitting layer formed on the electrode can be made uniform.

In this electro-optical device, the organic material may be composed of a polymer material.
According to this, in the electro-optical device in which the light emitting layer is made of a polymer material, for example, the light emitting layer can be reliably formed in a region where a step formed on the electrode is formed. Moreover, the film thickness of the light emitting layer formed on the electrode can be made uniform.

In the electro-optical device, the light emitting layer may be formed using an ink jet method.
According to this, in the electro-optical device in which the light emitting layer is formed using the ink jet method, for example, the light emitting layer can be reliably formed in a region where a step generated on the electrode is formed. Moreover, the film thickness of the light emitting layer formed on the electrode can be made uniform.

The electronic apparatus of the present invention includes the electro-optical device described above.
According to this, since the light emitting layer can be reliably formed in the region where the step formed on the electrode is formed, an electronic apparatus including the electro-optical device with improved display quality is provided. be able to.

Hereinafter, each embodiment in which the present invention is applied to an organic electroluminescence display will be described with reference to the drawings. Each embodiment shows one mode of the present invention, does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. Furthermore, in each figure shown below, in order to make each layer and each member large enough to be recognized on the drawing, the scale is varied for each layer and each member.
(First embodiment)
A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a block diagram for explaining an electrical configuration of an organic electroluminescence display. FIG. 2 is a circuit diagram showing an electrical configuration of the display panel unit and the data line driving circuit. FIG. 3 is a circuit diagram of the pixel.

  As shown in FIG. 1, the organic electroluminescence display 10 includes a signal generation circuit 11, a display panel unit 12, a scanning line driving circuit 13, and a data line driving circuit 14. Each of the signal generation circuit 11, the scanning line driving circuit 13, and the data line driving circuit 14 of the organic electroluminescence display 10 may be configured by independent electronic components. For example, each of the signal generation circuit 11, the scanning line driving circuit 13, and the data line driving circuit 14 may be configured by a one-chip semiconductor integrated circuit device. Further, all or a part of the signal generation circuit 11, the scanning line driving circuit 13, and the data line driving circuit 14 may be configured by a programmable IC chip, and the function may be realized by software by a program written in the IC chip. Good.

The signal generation circuit 11 receives a clock pulse CP and image digital data D supplied from an external device (not shown). The signal generation circuit 11 generates a horizontal synchronization signal HSYNC and a vertical synchronization signal VSYNC based on the clock pulse CP. The signal generation circuit 11 outputs the generated horizontal synchronization signal HSYNC to the scanning line driving circuit 13 and outputs the vertical synchronization signal VSYNC to the data line driving circuit 14. Further, the signal generation circuit 11 outputs the image digital data D to the data line driving circuit 14.

  As shown in FIG. 2, the display panel unit 12 includes n scanning lines Y1, Y2,..., Yn extending along the row direction. Further, the display panel unit 12 includes m data lines X1, X2,..., Xm extending along the column direction. Pixels 20 are formed at positions corresponding to the intersections of the scanning lines Y1, Y2,..., Yn and the data lines X1, X2,.

  Furthermore, the display panel unit 12 includes m power lines Lo extending in parallel with the data lines X1, X2,. The power supply voltage Vo is supplied to all the power supply lines Lo.

  Each pixel 20 is connected to the scanning line driving circuit 13 via a corresponding scanning line Y1, Y2,. Each pixel 20 is connected to the data line driving circuit 14 via corresponding data lines X1, X2,..., Xm. Further, each pixel 20 is connected to a power supply line Lo.

  Each of the pixels 20 includes a driving transistor Qd, a switching transistor Qsw, a holding capacitor Co, and an organic electroluminescence element OLED, as shown in FIG. FIG. 3 is an equivalent circuit diagram of the pixel 20 formed at a position corresponding to the intersection of the nth scanning line Yn and the mth data line Xm. Since all the electrical configurations of the pixels 20 are the same, only the pixels 20 formed at positions corresponding to the intersections of the nth scanning line Yn and the mth data line Xm will be described below for convenience of explanation. The description of other pixels 20 will be omitted.

  The drive transistor Qd is usually composed of a TFT (Thin Film Transistor). The drive transistor Qd has a P-type conductivity in this embodiment. The conductivity type of the switching transistor Qsw is N-type in this embodiment.

  The drain of the switching transistor Qsw is connected to the data line Xm. The gate of the switching transistor Qsw is connected to the scanning line Yn. The source of the switching transistor Qsw is connected to the gate of the drive transistor Qd. A holding capacitor Co is connected between the gate and source of the driving transistor Qd. The source of the driving transistor Qd is connected to the power supply line Lo. The drain of the drive transistor Qd is connected to the anode E1 of the organic electroluminescence element OLED. The cathode E2 of the organic electroluminescence element OLED is grounded.

  The scanning line driving circuit 13 generates scanning signals SC1, SC2,. Each of the scanning signals SC1, SC2,..., SCn is a voltage signal having an L level and an H level. Further, the scanning line driving circuit 13 sequentially drives the scanning lines Y1, Y2,..., Yn by sequentially outputting H level scanning signals to the respective scanning lines Y1, Y2,..., Yn according to the horizontal synchronization signal HSYNC. .

As shown in FIG. 2, the data line driving circuit 14 includes a plurality of single line drivers 14a. Each of the plurality of single line drivers 14a is connected to a corresponding data line X1, X2,. Each single line driver 14a receives the image digital data D output from the signal generation circuit 11. Each single line driver 14a creates data signals D1, D2,..., Dm, which are analog voltage signals of a level corresponding to the magnitude of the input image digital data D. The single line driver 14a receives the data signals D1, D2,..., Dm through the corresponding data lines X1, X2,..., Xm according to the vertical synchronization signal VSYNC output from the signal generation circuit 11. Output to 20 at once.

  When the scanning line driving circuit 13 outputs an H level scanning signal to one scanning line among the scanning lines Y1, Y2,..., Yn in accordance with the horizontal synchronization signal HSYNC, one line connected to the scanning line is output. Each of the switching transistors Qsw of all the pixels 20 is turned on. At this time, the data signals D1, D2,..., Dm are simultaneously output from the single line drivers 14a of the data line driving circuit 14 through the corresponding data lines X1, X2,. Then, a data signal is supplied to each holding capacitor Co of all the pixels 20 of the one row where the switching transistor Qsw is turned on. As a result, the internal state (charge amount of the holding capacitor Co) of the pixel 20 is set in the pixel 20 according to the data signal, and the conductivity of the driving transistor Qd is controlled accordingly. As a result, a driving current Iel having a level corresponding to the conductivity is supplied to the organic electroluminescence element OLED, and the organic electroluminescence element OLED emits light with a luminance corresponding to the current level of the driving current Iel.

  Thereafter, the data signals D1, D2,..., Dm are supplied to the respective pixels 20 by sequentially selecting the respective scanning lines Y1, Y2,..., Yn, and the respective organic electroluminescence elements OLED are brought to the current level of the driving current Iel. Emits light with a corresponding brightness. In this way, an image corresponding to the data signals D1, D2,..., Dm is displayed on the display panel unit 12.

  Next, the structure of the display panel unit 12 will be described with reference to FIGS. FIG. 4A is a top view of the pixel 20 including a part of the metal frame MP constituting the drive transistor Qd, the power supply line Lo, and the like constituting the pixel 20.

As shown in FIG. 4A, the metal frame MP includes a first metal frame M1 indicated by a two-point difference line and a second metal frame M2 indicated by a solid line.
The first metal frame M1 includes a gate electrode 21G constituting the gate of the driving transistor Qd, and a gate electrode metal frame connected to the gate electrode 21G and supplying the data signals D1, D2,..., Dm to the gate electrode 21G. 21GF is provided. The first metal frame M1 includes a power line metal frame VF that constitutes the power line Lo.

  The second metal frame M2 includes a drain electrode 21D that constitutes the drain of the drive transistor Qd, and a drain electrode metal frame 21DF that is connected to the drain electrode 21D and through which the drive current Iel flows. The second metal frame M2 includes a current supply electrode 21K that is connected to the drain electrode metal frame 21DF and supplies the drive current Iel to the anode E1 of the organic electroluminescence element OLED. Further, the second metal frame M2 includes a source electrode 21S that constitutes the source of the driving transistor Qd, and a source electrode metal frame 21SF that is connected to the source electrode 21S and supplies the power supply voltage Vo to the source electrode 21S. It has. The second metal frame M2 includes a gate connection electrode 21C and a signal line metal frame 21CF that is connected to the gate connection electrode 21C and supplies a data signal to the gate electrode 21G.

4B is a cross-sectional view of the display panel portion 12 including a part of the metal frame MP shown in FIG. 4A, and corresponds to a cross section taken along the line AA in FIG. doing.
As shown in FIG. 4B, an island-shaped silicon layer 30 is formed on the glass substrate GL in a region corresponding to the position where the drain electrode 21D, the source electrode 21S, and the gate electrode 21G are disposed. Yes. This silicon layer 30 is made of polycrystalline silicon in this embodiment. Further, a drain region 30D is formed in the vicinity of a position of the silicon layer 30 facing the drain electrode 21D. Similarly, a source region 30S is formed near the position of the silicon layer 30 facing the source electrode 21S. A channel region 30C is formed between the drain region 30D and the source region 30S of the silicon layer 30. The drain region 30D is electrically connected to the drain electrode 21D, and the source region 30S is electrically connected to the source electrode 21S.

  A gate insulating film 31 is formed in a region on the silicon layer 30 except for the position connected to the drain electrode 21D and the source electrode 21S. The gate insulating film 31 is directly formed on the glass substrate GL in a region where the silicon layer 30 is not formed.

  On the gate insulating film 31, the first metal frame M1 is formed. Specifically, the gate electrode 21G is formed on the gate insulating film 31 at a position facing the channel region 30C of the silicon layer 30. The gate electrode metal frame 21GF is formed in a region where the gate insulating film 31 is directly formed on the glass substrate GL. Further, the power supply line metal frame VF is formed on the right side of the gate electrode metal frame 21GF in the drawing.

An interlayer insulating film 32 is formed on the gate electrode 21G, the gate electrode metal frame 21GF, the power line metal frame VF, and the gate insulating film 31. The interlayer insulating film 32 is made of silicon dioxide (SiO ₂ ) in the present embodiment. A second metal frame M <b> 2 is formed on the interlayer insulating film 32. Specifically, the drain electrode 21D is formed on the interlayer insulating film 32 at a position facing the drain region 30D. Similarly, the source electrode 21S is formed on the interlayer insulating film 32 at a position facing the source region 30S.

  The gate connection electrode 21C is formed on the interlayer insulating film 32 at a position facing the gate electrode metal frame 21GF. Further, the signal line metal frame 21CF is formed on the interlayer insulating film 32 at a position facing the power line metal frame VF.

  A drain contact hole HD is formed in the interlayer insulating film 32 between the drain electrode 21D and the drain region 30D of the silicon layer 30 so as to communicate with the gate insulating film. The drain electrode 21D and the drain region 30D are electrically connected through a drain contact portion DCON formed by embedding a conductive material in the drain contact hole HD.

  Similarly, a source contact hole HS is formed in the interlayer insulating film 32 between the source electrode 21S and the source region 30S of the silicon layer 30 so as to communicate with the gate insulating film. The source electrode 21S and the source region 30S are electrically connected through a source contact portion SCON formed by embedding a conductive material in the source contact hole HS. The drain electrode 21D, the source electrode 21S, the gate electrode 21G, the drain contact portion DCON, the source contact portion SCON, and the silicon layer 30 constitute the drive transistor Qd.

Further, a gate contact hole HG in which the interlayer insulating film 32 is formed is formed in the interlayer insulating film 32 between the gate connection electrode 21C and the gate electrode metal frame 21GF. The gate connection electrode 21C and the gate electrode metal frame 21GF are electrically connected through a gate contact portion GCON formed by burying a conductive material in the gate contact hole HG. .

As described above, the display panel unit 12 has a multilayer wiring structure in which the first metal frame M1 and the second metal frame M2 are stacked with the interlayer insulating film 32 interposed therebetween.
An insulating layer 33 is formed on each of the electrodes 21D, 21S, 21C, the signal line metal frame 21CF, and the interlayer insulating film 32. In this embodiment, the insulating layer 33 is made of silicon dioxide (SiO ₂ ). On the insulating layer 33, a pixel electrode 34 and a first partition wall layer 35a are formed at predetermined positions, respectively. Specifically, the electrodes 21D, 21S, and 21G, the gate electrode metal frame 21GF, the gate connection electrode 21C, the signal line metal frame 21CF, and the power supply line metal frame VF that constitute the drive transistor Qd are disposed at the positions. A pixel electrode 34 is formed on the corresponding insulating layer 33. The pixel electrode 34 is electrically connected to the current supply electrode 21K shown in FIG. That is, the pixel electrode 34 corresponds to the anode E1 of the organic electroluminescence element OLED shown in FIG. 3, and supplies the drive current Iel output from the drive transistor Qd to the light emitting layer 36 formed on the pixel electrode 34. It is an electrode for doing. The pixel electrode 34 is made of a material having high optical reflectance. In the present embodiment, the pixel electrode 34 is composed of two layers of aluminum (Al) and tin-doped indium oxide (ITO).

The first partition layer 35a is formed on the peripheral edge of the pixel electrode 34, and is made of a hydrophilic inorganic material that is an insulator. For this reason, the inner side of the first partition layer 35a becomes a pixel light emitting region. That is, the pixel light emission region is defined by the first partition layer 35 a provided at the peripheral edge of the pixel electrode 34. The first partition layer 35a in the present embodiment is made of silicon dioxide (SiO ₂ ), which is a hydrophilic inorganic material.

A second partition layer 35b is formed on the first partition layer 35a. The surface of the second partition wall layer 35b is subjected to water repellency treatment by performing plasma treatment (CF ₄ plasma treatment) using methane tetrafluoride as a reaction gas in the air atmosphere.

A light emitting layer 36 made of a polymer organic material is formed in a region (hereinafter referred to as a pixel opening S) on the pixel electrode 34 and surrounded by the first and second partition layers 35a and 35b. Is formed. In the present embodiment, as described above, since the first partition layer 35a is made of hydrophilic silicon dioxide (SiO ₂ ), the light emitting layer 36 made of a polymer organic material is used as the first partition layer. It is formed in close contact with the surface of 35a. On the other hand, since the second partition layer 35b has been subjected to water repellency treatment as described above, the light emitting layer 36 made of a polymer organic material is formed in close contact with the entire surface of the second partition layer 35b. There is nothing. As a result, for example, when the light emitting layer 36 is formed by applying a polymer organic material to the pixel opening S using an inkjet method, the light emitting layer 36 is formed on the pixel electrode 34 of the pixel opening S. The polymer organic material can be attached with high accuracy.

  A cathode electrode 37 is formed over the entire surface of the light emitting layer 36 and the second partition layer 35b. The cathode electrode 37 is made of a light transmissive conductive material. The cathode electrode 37 is an electrode layer corresponding to the cathode E2 of the organic electroluminescence element OLED. In the present embodiment, the cathode electrode 37 is made of tin-doped indium oxide (ITO). A sealing substrate 38 made of a light transmissive material is formed on the cathode electrode 37.

Then, the drive current Iel output from the drain electrode 21D constituting the drive transistor Qd is supplied to the pixel electrode 34 via the drain electrode metal frame 21DF and the current supply electrode 21K. The light emitting layer 36 emits light according to the level. Then, the light emitted from the light emitting layer 36 is emitted to the outside through the cathode electrode 37 and the sealing substrate 38. At this time, as described above, since the pixel electrode 34 is composed of two layers of aluminum (Al) and tin-doped indium oxide (ITO), the light emitted from the light emitting layer 36 is emitted from the pixel electrode 34. The light is reflected and emitted from the sealing substrate 38 side. In this manner, a so-called top emission type organic electroluminescence display in which the light emitted from the light emitting layer 36 is emitted from the sealing substrate 38 side is configured.

In the present embodiment, the display panel unit 12 configured as described above is on the pixel electrode 34, and the first metal frame M <b> 1 and the second metal frame M <b> 2 form the interlayer insulating film 32 below the pixel electrode 34. Insulating members 40a and 40b made of a hydrophilic material are formed in a region corresponding to a position where they are arranged to overlap each other. In the present embodiment, the insulating members 40a and 40b are each made of silicon dioxide (SiO ₂ ).

  More specifically, as shown in FIGS. 4A and 4B, the gate electrode metal frame 21GF and the gate connection electrode 21C are overlapped with each other via the interlayer insulating film 32 on the pixel electrode. Insulation in regions Z1 (regions shown by diagonal lines in FIG. 4 (a)) corresponding to the positions where they are arranged and their outer peripheral edges (this corresponds to the edge portion described in the claims) A member 40a is formed. The insulating member 40a is formed in a region corresponding to the edge portion of the gate connection electrode 21C.

  Further, a position on the pixel electrode 34 where the power line metal frame VF and the signal line metal frame 21CF are arranged to overlap each other via the interlayer insulating film 32 and an outer peripheral edge thereof (this is the scope of the claims) Insulating members 40b are formed in regions Z2 (corresponding to the edge portions described in FIG. 4A) (regions indicated by hatching in FIG. 4A). The insulating member 40b is formed except for a region corresponding to the central portion of the position where the power line metal frame VF and the signal line metal frame 21CF are arranged to be overlapped with each other. The regions Z1 and Z2 in which the insulating members 40a and 40b are respectively formed are regions in which a relatively large step such as about 1 μm is generated as compared with other regions.

  Therefore, by forming the hydrophilic insulating members 40a and 40b in the regions Z1 and Z2, respectively, the polymer organic that constitutes the light emitting layer 36 on the regions Z1 and Z2 where a relatively large step on the pixel electrode 34 is generated. The material can be reliably attached. As a result, it is possible to prevent the pixel electrode 34 and the cathode electrode 37 from contacting and short-circuiting in the regions Z1 and Z2. From this, the display quality of the organic electroluminescence display can be improved. Moreover, the yield of an organic electroluminescent display can be improved.

  Further, by forming the hydrophilic insulating members 40a and 40b in the regions Z1 and Z2, the film thickness of the light emitting layer 36 of the pixel 20 including the regions Z1 and Z2 can be made uniform. Therefore, the luminance of light emitted from the light emitting layer 36 can be made uniform. As a result, display unevenness of the organic electroluminescence display can be suppressed. Further, if the thickness of the light emitting layer 36 in the regions Z1 and Z2 is small, dark spots are likely to grow in the regions Z1 and Z2, but the regions are formed by forming hydrophilic insulating members 40a and 40b. The film thickness of the light emitting layer 36 in Z1 and Z2 can be increased. Therefore, the growth of dark spots can be suppressed. As a result, it can suppress that the display quality of an organic electroluminescent display falls.

Further, when the light emitting layer 36 is formed using the ink jet method, the light emitting layer 36 is reliably formed in the regions Z1 and Z2 in the regions Z1 and Z2 on the pixel electrode 34 as described above. can do. From this, the display quality of the organic electroluminescent display manufactured using the inkjet system can be improved. Moreover, the yield of an organic electroluminescent display can be improved.

  In addition, the board | substrate as described in a claim respond | corresponds to the glass substrate GL in this embodiment, for example. Further, the drive element described in the claims corresponds to, for example, the drive transistor Qd in the present embodiment. Furthermore, the wiring layer described in the claims corresponds to, for example, the power line Lo, the first metal frame M1, the second metal frame M2, the power line metal frame VF, or the signal line metal frame 21CF in the present embodiment. ing. In addition, the electro-optical device described in the claims corresponds to, for example, the organic electroluminescence display 10 in the present embodiment. The electrodes described in the claims correspond to, for example, the pixel electrode 34 in the present embodiment. In addition, the drive signal described in the claims corresponds to the drive current Iel in the present embodiment, for example.

According to the embodiment, the following features can be obtained.
(1) In the above embodiment, the gate electrode metal frame 21GF and the gate connection electrode 21C are disposed on the pixel electrode 34 so as to overlap each other with the interlayer insulating film 32 therebetween, and at the outer peripheral edge thereof. An insulating member 40a made of a hydrophilic material was formed in each corresponding region Z1. Further, a position on the pixel electrode 34 where the power line metal frame VF and the signal line metal frame 21CF are arranged to overlap each other via the interlayer insulating film 32 and a region Z2 corresponding to the outer peripheral edge portion thereof. A hydrophilic insulating member 40b was formed.

  Accordingly, it is possible to reliably attach the polymer organic material constituting the light emitting layer 36 to each of the regions Z1 and Z2 where a relatively large step on the pixel electrode 34 occurs. As a result, it is possible to prevent the pixel electrode 34 and the cathode electrode 37 from contacting and short-circuiting in the regions Z1 and Z2. From this, the display quality of the organic electroluminescence display can be improved. Moreover, the yield of an organic electroluminescent display can be improved.

  (2) In the embodiment, the insulating member 40a made of a hydrophilic material is formed in each of the regions Z1 and Z2 where a relatively large step on the pixel electrode 34 occurs. Accordingly, it is possible to reliably attach the polymer organic material constituting the light emitting layer 36 to each of the regions Z1 and Z2 where a relatively large step on the pixel electrode 34 occurs. As a result, the thickness of the light emitting layer 36 of the pixel 20 including the regions Z1 and Z2 can be made uniform. Thus, the luminance of light emitted from the light emitting layer 36 can be made uniform for each pixel 20.

  (3) In the above-described embodiment, the gate electrode metal frame 21GF and the gate connection electrode 21C are disposed on the pixel electrode 34 so as to overlap each other via the interlayer insulating film 32 and the outer peripheral edge thereof. An insulating member 40a made of a hydrophilic material was formed in each corresponding region Z1. Further, a position on the pixel electrode 34 where the power line metal frame VF and the signal line metal frame 21CF are arranged to overlap each other via the interlayer insulating film 32 and a region Z2 corresponding to the outer peripheral edge portion thereof. A hydrophilic insulating member 40b was formed.

Therefore, the film thickness of the light emitting layer 36 does not decrease in each of the regions Z1 and Z2 on the pixel electrode 34. As a result, it is possible to suppress the growth of dark spots in each of the regions Z1 and Z2. Therefore, it is possible to suppress the display quality of the organic electroluminescence display from being lowered accordingly.
(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG. The display panel unit according to the present embodiment has the same structure as that of the first embodiment except that the regions where the insulating members 40a and 40b made of a hydrophilic material are formed are different. Accordingly, the member numbers are assigned to the other structures, and detailed descriptions thereof are omitted.

  FIG. 5 is a top view of the pixel 20 including a part of the metal frame MP constituting the drive transistor Qd, the power supply line Lo, and the like constituting the pixel 20 described in the first embodiment. In the present embodiment, the outer periphery of the region R corresponding to the position on the pixel electrode 34 below which various driving elements for supplying the driving current Iel to the organic electroluminescence element OLED such as the driving transistor Qd are arranged and formed. An insulating layer made of a hydrophilic insulating material is formed in the region Z3. The region R in which various drive elements such as the drive transistor Qd are arranged and formed is generally raised by, for example, about 1 μm as compared with the other regions, and the region Z3 on the outer periphery of the region R is relatively large. A step occurs.

  In this embodiment, an insulating layer made of a hydrophilic material is formed on the pixel electrode 34 and in the region Z3 in the outer peripheral portion of the region R. Although other driving elements such as the switching transistor Qsw and the holding capacitor Co other than the driving transistor Qd are not shown in FIG. 5, they are formed in the region R in the vicinity of the formation position of the driving transistor Qd. ing.

As a result, the polymer organic material constituting the light emitting layer 36 can be reliably adhered to the pixel electrode 34 corresponding to the region Z3 on the outer peripheral portion of the region R. Therefore, the film thickness of the light emitting layer 36 can be made uniform. As a result, the same effect as that of the first embodiment can be obtained.
(Third embodiment)
Next, application of the electronic device of the organic electroluminescence display 10 as the electro-optical device described in the first and second embodiments will be described with reference to FIG. The organic electroluminescence display 10 can be applied to various electronic devices such as a mobile personal computer, a mobile phone, and a digital camera.

  FIG. 6 is a perspective view showing the configuration of the mobile personal computer. In FIG. 6, the personal computer 70 includes a main body 72 having a keyboard 71 and a display unit 73 using the organic electroluminescence display 10. Even in this case, the display unit 73 using the organic electroluminescence display 10 exhibits the same effects as those of the first and second embodiments.

In addition, embodiment of invention is not limited to said each embodiment, You may implement as follows.
In the first and second embodiments, the hydrophilic material constituting the insulating members 40a and 40b is made of silicon dioxide (SiO ₂ ). This may be composed of a hydrophilic polymer material or an SOG film (a film in which silanol (Si (OH) ₄ ) is dissolved in alcohol, for example, using a spinner). By doing in this way, the same effect as the above-mentioned embodiment can be produced.

In the first and second embodiments, the present invention is an organic electroluminescence device having a structure in which the light emitting layer 36 is directly formed on the pixel electrode 34 and the cathode electrode 37 is directly formed on the light emitting layer 36. It was adapted to an organic electroluminescent display 10 equipped with an OLED. A hole transport layer is formed on the pixel electrode 34, a light emitting layer 36 is formed on the hole transport layer, an electron injection layer is formed on the light emitting layer 36, and the electron injection layer is formed on the electron injection layer. You may adapt to the organic electroluminescent display provided with the organic electroluminescent element OLED which comprised the structure in which the cathode electrode 37 was formed. By doing in this way, the same effect as the above-mentioned embodiment can be produced.

  In each of the above embodiments, the electro-optical device is embodied in the organic electroluminescence display 10 including the organic electroluminescence element whose light emitting layer is composed of an organic material. However, the present invention is not limited to this, and liquid crystal Any electro-optical device including an electro-optical device such as an element, an electrophoretic device, and an electron-emitting device may be applied.

  In each of the above embodiments, the top emission type organic electroluminescence display 10 is embodied. However, the embodiment may be applied to a so-called bottom emission type organic electroluminescence display.

  In each of the above embodiments, the present invention is applied to the organic electroluminescence display 10 in which the pixel 20 is configured by the driving transistor Qd having the silicon layer 30 configured by polysilicon. This may be applied to an organic electroluminescence display in which the pixel 20 is configured by a driving transistor having a silicon layer composed of a single crystal.

It is a block diagram for demonstrating the electrical structure of an organic electroluminescent display. It is a circuit diagram which shows the electrical structure of a display panel part and a data line drive circuit. It is a circuit diagram of a pixel. FIG. 4A is a top view of a display panel unit including a part of a metal frame that constitutes the driving transistor, a power supply line, and the like that constitute a pixel in the first embodiment. (B) is a partial cross section figure of the display panel part containing the metal frame along the AA line in (a). It is a top view of the display panel part containing a part of metal frame which comprises the drive transistor, power supply line, etc. which comprise the pixel in 2nd Embodiment. It is a perspective view which shows the structure of the mobile type personal computer for demonstrating 3rd Embodiment. It is a partial cross section figure of the conventional display panel part.

Explanation of symbols

  D1, D2,..., Dm ... data signal, GL ... glass substrate as substrate, Lo ... power supply line as wiring layer, M1 ... first metal frame as wiring layer, M2 ... second metal as wiring layer. Frame, OLED: Organic electroluminescence element, Qd: Driving transistor as driving element, VF: Power line metal frame as wiring layer, 10: Organic electroluminescence display as electro-optical device, 21CF: Signal line metal as wiring layer Frame, 32... Interlayer insulating film, 34... Pixel electrode as electrode, 36... Light emitting layer, 40 a and 40 b.

Claims (9)

A substrate,
A light emitting layer formed above the substrate and emitting light according to the signal level of the data signal;
A wiring layer formed between the substrate and the light emitting layer, and formed with a wiring constituting a driving element that generates a driving signal based on the data signal;
An electrode that is formed between the light emitting layer and the wiring layer and supplies the driving signal output from the driving element to the light emitting layer;
In an electro-optical device including an insulator provided on a peripheral portion of the electrode to define a pixel light emission region,
The electro-optical device, wherein the electrode includes an insulating member made of a hydrophilic material in a region inside the insulator which is a pixel light emitting region. The electro-optical device according to claim 1.
The electro-optical device, wherein the insulating member is formed on the electrode in a region corresponding to an edge portion of the wiring. The electro-optical device according to claim 1.
The electro-optical device, wherein the insulating member is formed on the electrode in a region corresponding to a peripheral portion of a region including the wiring constituting the driving element. The electro-optical device according to any one of claims 1 to 3,
The electro-optical device, wherein the insulating member is made of any one of silicon dioxide, silicon monoxide, silicon nitride, a hydrophilic polymer material, or an SOG film. The electro-optical device according to any one of claims 1 to 4,
The electro-optical device, wherein the light emitted from the light emitting layer is emitted from a side facing the substrate. The electro-optical device according to claim 1,
The electro-optical device, wherein the light emitting layer is made of an organic material. The electro-optical device according to claim 6.
The electro-optical device is characterized in that the organic material is made of a polymer material. The electro-optical device according to claim 6.
The electro-optical device is characterized in that the light emitting layer is formed using an ink jet method. An electronic apparatus comprising the electro-optical device according to claim 1.

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