JP2016111118A5 - - Google Patents

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Publication number
JP2016111118A5
JP2016111118A5 JP2014245704A JP2014245704A JP2016111118A5 JP 2016111118 A5 JP2016111118 A5 JP 2016111118A5 JP 2014245704 A JP2014245704 A JP 2014245704A JP 2014245704 A JP2014245704 A JP 2014245704A JP 2016111118 A5 JP2016111118 A5 JP 2016111118A5
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JP
Japan
Prior art keywords
diffraction grating
region
gain
semiconductor
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014245704A
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English (en)
Japanese (ja)
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JP6507604B2 (ja
JP2016111118A (ja
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Priority to JP2014245704A priority Critical patent/JP6507604B2/ja
Priority claimed from JP2014245704A external-priority patent/JP6507604B2/ja
Priority to US14/959,782 priority patent/US20160164249A1/en
Publication of JP2016111118A publication Critical patent/JP2016111118A/ja
Publication of JP2016111118A5 publication Critical patent/JP2016111118A5/ja
Application granted granted Critical
Publication of JP6507604B2 publication Critical patent/JP6507604B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014245704A 2014-12-04 2014-12-04 半導体レーザ及び半導体レーザアレイ Active JP6507604B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014245704A JP6507604B2 (ja) 2014-12-04 2014-12-04 半導体レーザ及び半導体レーザアレイ
US14/959,782 US20160164249A1 (en) 2014-12-04 2015-12-04 Semiconductor laser diode and laser array implementing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014245704A JP6507604B2 (ja) 2014-12-04 2014-12-04 半導体レーザ及び半導体レーザアレイ

Publications (3)

Publication Number Publication Date
JP2016111118A JP2016111118A (ja) 2016-06-20
JP2016111118A5 true JP2016111118A5 (enExample) 2017-10-26
JP6507604B2 JP6507604B2 (ja) 2019-05-08

Family

ID=56095183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014245704A Active JP6507604B2 (ja) 2014-12-04 2014-12-04 半導体レーザ及び半導体レーザアレイ

Country Status (2)

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US (1) US20160164249A1 (enExample)
JP (1) JP6507604B2 (enExample)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2381123B (en) * 2001-10-17 2005-02-23 Marconi Optical Components Ltd Tuneable laser
US6763165B1 (en) * 2002-01-15 2004-07-13 Adc Telecommunications, Inc. Grating assisted coupler with controlled start
JP4288953B2 (ja) * 2002-02-19 2009-07-01 三菱電機株式会社 波長可変半導体レーザ
JP2005317695A (ja) * 2004-04-28 2005-11-10 Furukawa Electric Co Ltd:The レーザ装置
JP4657853B2 (ja) * 2005-08-11 2011-03-23 住友電工デバイス・イノベーション株式会社 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法
US8571084B2 (en) * 2007-08-02 2013-10-29 Technische Universiteit Eindhoven Semiconductor laser device
JP5058087B2 (ja) * 2008-07-10 2012-10-24 三菱電機株式会社 波長可変半導体レーザ
JP5287460B2 (ja) * 2009-04-17 2013-09-11 富士通株式会社 半導体レーザ
JP5625459B2 (ja) * 2009-05-21 2014-11-19 住友電気工業株式会社 半導体レーザ素子及びその作製方法
JP2011119434A (ja) * 2009-12-03 2011-06-16 Renesas Electronics Corp 半導体レーザ素子及びその製造方法
JP2011253977A (ja) * 2010-06-03 2011-12-15 Mitsubishi Electric Corp Ｄｂｒレーザ
JP2013077645A (ja) * 2011-09-29 2013-04-25 Sumitomo Electric Device Innovations Inc 半導体レーザおよびその制御方法
JP6186864B2 (ja) * 2012-05-18 2017-08-30 住友電気工業株式会社 半導体レーザ
JP5692330B2 (ja) * 2013-10-18 2015-04-01 住友電気工業株式会社 波長可変レーザ、波長可変レーザ装置、及び波長可変レーザ制御方法

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