JP2016058408A - 光起電力装置 - Google Patents

光起電力装置 Download PDF

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Publication number
JP2016058408A
JP2016058408A JP2013017473A JP2013017473A JP2016058408A JP 2016058408 A JP2016058408 A JP 2016058408A JP 2013017473 A JP2013017473 A JP 2013017473A JP 2013017473 A JP2013017473 A JP 2013017473A JP 2016058408 A JP2016058408 A JP 2016058408A
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JP
Japan
Prior art keywords
layer
electrode
metal electrode
hole
base layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013017473A
Other languages
English (en)
Japanese (ja)
Inventor
篠原　亘
Wataru Shinohara
亘 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to JP2013017473A priority Critical patent/JP2016058408A/ja
Priority to PCT/JP2013/007546 priority patent/WO2014118863A1/fr
Publication of JP2016058408A publication Critical patent/JP2016058408A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2013017473A 2013-01-31 2013-01-31 光起電力装置 Pending JP2016058408A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013017473A JP2016058408A (ja) 2013-01-31 2013-01-31 光起電力装置
PCT/JP2013/007546 WO2014118863A1 (fr) 2013-01-31 2013-12-24 Dispositif photovoltaïque

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013017473A JP2016058408A (ja) 2013-01-31 2013-01-31 光起電力装置

Publications (1)

Publication Number Publication Date
JP2016058408A true JP2016058408A (ja) 2016-04-21

Family

ID=51261613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013017473A Pending JP2016058408A (ja) 2013-01-31 2013-01-31 光起電力装置

Country Status (2)

Country Link
JP (1) JP2016058408A (fr)
WO (1) WO2014118863A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101866384B1 (ko) * 2017-08-16 2018-06-12 충남대학교산학협력단 탄소 기판을 이용한 태양 전지 제조 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106611803B (zh) * 2015-10-19 2019-04-23 北京创昱科技有限公司 一种太阳能电池片、其制备方法及其组成的太阳能电池组

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03257874A (ja) * 1990-03-07 1991-11-18 Sanyo Electric Co Ltd 光起電力装置の製造方法
EP2068369A1 (fr) * 2007-12-03 2009-06-10 Interuniversitair Microelektronica Centrum (IMEC) Cellules photovoltaïques ayant un circuit métallique et une passivation améliorée
JP2010080885A (ja) * 2008-09-29 2010-04-08 Sanyo Electric Co Ltd 太陽電池の製造方法
JP2011187567A (ja) * 2010-03-05 2011-09-22 Sanyo Electric Co Ltd 太陽電池モジュール
JP2011210802A (ja) * 2010-03-29 2011-10-20 Napura:Kk 太陽電池
JP2011249748A (ja) * 2010-04-28 2011-12-08 Fuji Electric Co Ltd 薄膜太陽電池
JP2013243165A (ja) * 2010-09-16 2013-12-05 Sanyo Electric Co Ltd 光電変換装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101866384B1 (ko) * 2017-08-16 2018-06-12 충남대학교산학협력단 탄소 기판을 이용한 태양 전지 제조 방법

Also Published As

Publication number Publication date
WO2014118863A1 (fr) 2014-08-07

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