JP2015532787A - 基板内に浅いカウンタードーピング層を含むトンネリング接合太陽電池 - Google Patents
基板内に浅いカウンタードーピング層を含むトンネリング接合太陽電池 Download PDFInfo
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- 230000005641 tunneling Effects 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 title description 71
- 230000005684 electric field Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 28
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000005368 silicate glass Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 21
- 238000002161 passivation Methods 0.000 description 21
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 21
- 239000010408 film Substances 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910007611 Zn—In—O Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
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- 230000035515 penetration Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
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- 238000004140 cleaning Methods 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
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- 239000011574 phosphorus Substances 0.000 description 1
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- 238000007725 thermal activation Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
[0030] 本発明の実施形態は、結晶Si(c−Si)基板内に位置する浅いカウンタードーピング層を有するc−Siベースの太陽電池を提供する。この太陽電池は更に、量子トンネリングバリア(QTB:quantum-tunneling barrier)層を含む。カウンタードーピングは、c−Si基板とは反対の伝導型を有するドーパントをc−Siの表面にドーピングすることによって達成可能である。ドーピングの深さをできる限り浅くして、短絡電流(JSC)の増大効果を最大限にする。
[0031] ヘテロ接合ベースの太陽電池は、他のタイプの太陽電池に比べて優れた性能が実証されている。性能を更に向上させるため、一部のヘテロ接合太陽電池では、エミッタ−ベース界面におけるバンドベンディングを利用して、エミッタ表面を効果的に不活性化する(passivate)「電界効果」パッシベーションを生成する。しかしながら、ヘテロ接合は、内部及び界面の再結合速度が極めて低くなければならない。このような目標を達成するため、ヘテロ接合界面に、低伝導率の半導体材料(バンドギャップが大きい、移動度が低い、ドーピングが低濃度である等の半導体材料)の薄い層又は誘電膜を形成して、QTB層として機能させることが多い。
[0044] n型又はp型のドープされた高品質の太陽電池級シリコン(SG−Si:solar-grade silicon)ウェーハを用いて、太陽電池を構築することができる。一実施形態では、n型ドープSG−Siウェーハを選択する。図2は、本発明の一実施形態に従った、基板に浅いカウンタードーピング層を有するトンネリング接合太陽電池を製造するプロセスを示す図を表す。
Claims (26)
- トンネリング接合太陽電池を製造するための方法であって、
前記太陽電池のためのベース層を取得することであって、前記ベース層が、前記ベース層の残り部分とは反対の伝導ドーピング型を有する浅いカウンタードーピング層を含む、ことと、
前記浅いカウンタードーピング層に隣接してエミッタ層を形成することであって、前記エミッタ層が前記ベース層のバンドギャップよりも大きいバンドギャップを有する、ことと、
表面電界層を形成することと、
前側電極を形成することと、
後側電極を形成することと、
を備える、方法。 - 前記ベース層が、
単結晶シリコンウェーハ、及び
エピタキシャル成長させた結晶−Si(c−Si)薄膜、
の少なくとも一方を含む、請求項1に記載の方法。 - 前記浅いカウンタードーピング層が傾斜ドーピング濃度を有し、前記傾斜ドーピングのピーク値が1×1018/cm3から5×1020/cm3の範囲である、請求項1に記載の方法。
- 前記浅いカウンタードーピング層が300nm未満の厚さを有する、請求項1に記載の方法。
- 前記浅いカウンタードーピング層が、
ドーパントの熱的ドライブインによるシリケートガラスのドーピング、
ドーパントの熱的ドライブインによるa−Siのドーピング、
ドーパントの熱的ドライブインによる多結晶Siのドーピング、
イオン注入、及び
ドープしたc−Siの層のエピタキシャル成長、
の少なくとも1つを用いて形成される、請求項1に記載の方法。 - 前記ベース層と前記エミッタ層との間に第1の量子トンネリングバリア(QTB)層を形成すること、及び
前記ベース層と前記表面電界層との間に第2のQTB層を形成すること、
の少なくとも一方を更に備える、請求項1に記載の方法。 - 前記第1及び/又は第2のQTB層が、
酸化シリコン(SiOX)、
水素化SiOX、
窒化シリコン(SiNX)、
水素化SiNX、
酸化アルミニウム(AlOX)、
酸窒化シリコン(SiON)、
水素化SiON、及び
1つ以上のバンドギャップの大きい半導体材料、
の少なくとも1つを含む、請求項6に記載の方法。 - 前記第1及び/又は第2のQTB層が1オングストロームから50オングストロームの厚さを有する、請求項6に記載の方法。
- 前記第1及び/又は第2のQTB層が、以下の技法すなわち
熱酸化、
原子層堆積、
ウェット又はスチーム酸化、
低圧ラジカル酸化、及び
プラズマエンハンストCVD(PECVD)、
の少なくとも1つを用いて形成される、請求項6に記載の方法。 - 前記エミッタ層及び/又は前記表面電界層が、
アモルファス−Si(a−Si)、
多結晶Si、及び
1つ以上のバンドギャップの大きい半導体材料、
の少なくとも1つを含む、請求項1に記載の方法。 - 前記エミッタ層及び/又は前記表面電界層が、ドーピング濃度が1×1015/cm3から5×1020/cm3の範囲である傾斜ドープアモルファス−Si(a−Si)層を含む、請求項10に記載の方法。
- 前記エミッタ層が入射太陽光に面する前記ベース層の前側に位置する、請求項1に記載の方法。
- 前記エミッタ層が入射光から離れた方向に面する前記ベース層の後側に位置する、請求項1に記載の方法。
- ベース層であって、このベース層の残り部分とは反対の伝導ドーピング型を有する浅いカウンタードーピング層を含むベース層と、
前記浅いカウンタードーピング層に隣接するエミッタ層であって、前記ベース層のバンドギャップよりも大きいバンドギャップを有するエミッタ層と、
前記ベース層の前記浅いカウンタードーピング層とは反対の側に隣接して位置する表面電界層と、
前側電極と、
後側電極と、
を備える、トンネリング接合太陽電池。 - 前記ベース層が、
単結晶シリコンウェーハ、
エピタキシャル成長させた結晶−Si(c−Si)薄膜、及び
傾斜ドーピングを含むエピタキシャル成長させた結晶−Si(c−Si)薄膜、
の少なくとも1つを含む、請求項14に記載の太陽電池。 - 前記浅いカウンタードーピング層が傾斜ドーピング濃度を有し、前記傾斜ドーピングのピーク値が1×1018/cm3から5×1020/cm3の範囲である、請求項14に記載の太陽電池。
- 前記浅いカウンタードーピング層が300nm未満の厚さを有する、請求項14に記載の太陽電池。
- 前記浅いカウンタードーピング層が、
ドーパントの熱的ドライブインによるシリケートガラスのドーピング、
ドーパントの熱的ドライブインによるa−Siのドーピング、
ドーパントの熱的ドライブインによる多結晶Siのドーピング、
イオン注入、及び
ドープしたc−Siの層のエピタキシャル成長、
の少なくとも1つを用いて形成される、請求項14に記載の太陽電池。 - 前記ベース層と前記エミッタ層との間の第1の量子トンネリングバリア(QTB)層、及び
前記ベース層と前記表面電界層との間の第2のQTB層、
の少なくとも一方を更に備える、請求項14に記載の太陽電池。 - 前記第1及び/又は第2のQTB層が、
酸化シリコン(SiOX)、
水素化SiOX、
窒化シリコン(SiNX)、
水素化SiNX、
酸化アルミニウム(AlOX)、
酸窒化シリコン(SiON)、
水素化SiON、及び
1つ以上のバンドギャップの大きい半導体材料、
の少なくとも1つを含む、請求項19に記載の太陽電池。 - 前記第1及び/又は第2のQTB層が1オングストロームから50オングストロームの厚さを有する、請求項19に記載の太陽電池。
- 前記第1及び/又は第2のQTB層が、以下の技法すなわち
熱酸化、
原子層堆積、
ウェット又はスチーム酸化、
低圧ラジカル酸化、及び
プラズマエンハンストCVD(PECVD)、
の少なくとも1つを用いて形成される、請求項19に記載の太陽電池。 - 前記エミッタ層及び/又は前記表面電界層が、
アモルファス−Si(a−Si)、
多結晶Si、及び
1つ以上のバンドギャップの大きい半導体材料、
の少なくとも1つを含む、請求項14に記載の太陽電池。 - 前記エミッタ層及び/又は前記表面電界層が、ドーピング濃度が1×1015/cm3から5×1020/cm3の範囲である傾斜ドープアモルファス−Si(a−Si)層を含む、請求項23に記載の太陽電池。
- 前記エミッタ層が入射太陽光に面する前記ベース層の前側に位置する、請求項14に記載の太陽電池。
- 前記エミッタ層が入射光から離れた方向に面する前記ベース層の後側に位置する、請求項14に記載の太陽電池。
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US13/601,521 US20130298973A1 (en) | 2012-05-14 | 2012-08-31 | Tunneling-junction solar cell with shallow counter doping layer in the substrate |
US13/601,521 | 2012-08-31 | ||
PCT/US2013/047422 WO2014035538A1 (en) | 2012-08-31 | 2013-06-24 | Tunneling-junction solar cell with shallow counter doping layer in the substrate |
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US (1) | US20130298973A1 (ja) |
EP (1) | EP2891189A1 (ja) |
JP (1) | JP2015532787A (ja) |
CN (1) | CN104718630B (ja) |
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US20130298973A1 (en) | 2013-11-14 |
CN104718630A (zh) | 2015-06-17 |
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AU2013309484A1 (en) | 2015-03-19 |
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EP2891189A1 (en) | 2015-07-08 |
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