JP2015532765A - 気密のキャビティを製造するための装置および方法 - Google Patents
気密のキャビティを製造するための装置および方法 Download PDFInfo
- Publication number
- JP2015532765A JP2015532765A JP2015526915A JP2015526915A JP2015532765A JP 2015532765 A JP2015532765 A JP 2015532765A JP 2015526915 A JP2015526915 A JP 2015526915A JP 2015526915 A JP2015526915 A JP 2015526915A JP 2015532765 A JP2015532765 A JP 2015532765A
- Authority
- JP
- Japan
- Prior art keywords
- carrier
- precursor
- mld
- ald
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 95
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000002243 precursor Substances 0.000 claims abstract description 197
- 230000000295 complement effect Effects 0.000 claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 44
- 230000004888 barrier function Effects 0.000 claims description 41
- 238000009792 diffusion process Methods 0.000 claims description 27
- 238000005304 joining Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000006555 catalytic reaction Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000004807 localization Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 155
- 239000000126 substance Substances 0.000 description 139
- 238000000231 atomic layer deposition Methods 0.000 description 85
- 239000000463 material Substances 0.000 description 55
- 238000005538 encapsulation Methods 0.000 description 49
- 239000010408 film Substances 0.000 description 37
- 239000000203 mixture Substances 0.000 description 35
- 239000012876 carrier material Substances 0.000 description 17
- 239000011521 glass Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 17
- 239000000969 carrier Substances 0.000 description 15
- 239000004642 Polyimide Substances 0.000 description 12
- 229920001721 polyimide Polymers 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- -1 polydimethylsiloxane Polymers 0.000 description 11
- 229920000139 polyethylene terephthalate Polymers 0.000 description 11
- 239000005020 polyethylene terephthalate Substances 0.000 description 11
- 239000000376 reactant Substances 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 239000004698 Polyethylene Substances 0.000 description 10
- 239000004743 Polypropylene Substances 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000011065 in-situ storage Methods 0.000 description 10
- 239000011368 organic material Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 229920001643 poly(ether ketone) Polymers 0.000 description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 10
- 229920000573 polyethylene Polymers 0.000 description 10
- 239000004926 polymethyl methacrylate Substances 0.000 description 10
- 229920001155 polypropylene Polymers 0.000 description 10
- 229910052718 tin Inorganic materials 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 230000005693 optoelectronics Effects 0.000 description 8
- 230000008439 repair process Effects 0.000 description 8
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- 239000011147 inorganic material Substances 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 150000001722 carbon compounds Chemical class 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000005670 electromagnetic radiation Effects 0.000 description 6
- 125000000524 functional group Chemical group 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- 239000011112 polyethylene naphthalate Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000012876 topography Methods 0.000 description 6
- GDALETGZDYOOGB-UHFFFAOYSA-N Acridone Natural products C1=C(O)C=C2N(C)C3=CC=CC=C3C(=O)C2=C1O GDALETGZDYOOGB-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 5
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 5
- 239000004793 Polystyrene Substances 0.000 description 5
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 5
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- FZEYVTFCMJSGMP-UHFFFAOYSA-N acridone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3NC2=C1 FZEYVTFCMJSGMP-UHFFFAOYSA-N 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 229910052790 beryllium Inorganic materials 0.000 description 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052793 cadmium Inorganic materials 0.000 description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 229910003472 fullerene Inorganic materials 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910021389 graphene Inorganic materials 0.000 description 5
- 229920001903 high density polyethylene Polymers 0.000 description 5
- 239000004700 high-density polyethylene Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 229920001684 low density polyethylene Polymers 0.000 description 5
- 239000004702 low-density polyethylene Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 239000002052 molecular layer Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 5
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical compound C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 5
- PJQYNUFEEZFYIS-UHFFFAOYSA-N perylene maroon Chemical compound C=12C3=CC=C(C(N(C)C4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)N(C)C(=O)C4=CC=C3C1=C42 PJQYNUFEEZFYIS-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 5
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 5
- 229920000728 polyester Polymers 0.000 description 5
- 229920000098 polyolefin Polymers 0.000 description 5
- 229920000123 polythiophene Polymers 0.000 description 5
- 239000004800 polyvinyl chloride Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 229910052714 tellurium Inorganic materials 0.000 description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 5
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000249 desinfective effect Effects 0.000 description 4
- 239000003814 drug Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004049 embossing Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007142 ring opening reaction Methods 0.000 description 3
- LXEJRKJRKIFVNY-UHFFFAOYSA-N terephthaloyl chloride Chemical compound ClC(=O)C1=CC=C(C(Cl)=O)C=C1 LXEJRKJRKIFVNY-UHFFFAOYSA-N 0.000 description 3
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003350 kerosene Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920003366 poly(p-phenylene terephthalamide) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- BRNBYPNQQNFBEX-UHFFFAOYSA-N 2,2-dimethoxy-1,6,2-diazasilocane Chemical compound CO[Si]1(OC)CCCNCCN1 BRNBYPNQQNFBEX-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- AWSNMQUTBVZKHY-UHFFFAOYSA-N chloro-methoxy-dimethylsilane Chemical compound CO[Si](C)(C)Cl AWSNMQUTBVZKHY-UHFFFAOYSA-N 0.000 description 1
- 150000005676 cyclic carbonates Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000012939 laminating adhesive Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/06—Hermetically-sealed casings
- H05K5/065—Hermetically-sealed casings sealed by encapsulation, e.g. waterproof resin forming an integral casing, injection moulding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0197—Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/031—Anodic bondings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Catalysts (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
例えば約1nm〜約50nm、
例えば約50nm〜約200nm、
例えば約200nm〜約100μm
の層厚を有することができる。カプセル化層108、114のための物質として、例えば酸化アルミニウム、酸化亜鉛、酸化ジルコニウム、酸化チタン、酸化ハフニウム、酸化タンタル、酸化ランタニウム、酸化ケイ素、窒化ケイ素、オキシ窒化ケイ素、インジウム錫オキシド、インジウム亜鉛オキシド、アルミニウムをドープした酸化亜鉛、ならびにこれらの混合物および合金が適当でありうる。
本願は、2013年7月18日に出願されたPCT出願No.:PCT/EP2013/065220の米国特許法第371に従った国際段階での出願であり、2012年8月14日付けで出願されたドイツ国出願No.:10 2012 214 411.0からの優先権を主張するものであり、かつその開示内容は、参照のために本明細書に援用される。
技術分野
さまざまな実施態様は、気密のキャビティを製造する装置およびこの装置を製造するための方法に関する。
平面状有機素子、例えば有機発光ダイオードまたは有機光電素子は、有害物質の侵入から、例えば酸素および水の侵入から保護(カプセル化)されるべきであった。さもないと、有機層の有機物質または有機物質混合物の無制御の老化または崩壊をまねきうるからである。
さまざまな実施態様において、例えば、水および酸素に敏感な物質、物質混合物またはバリアフィルムを有する素子を、従来の接着剤なしに気密にカプセル化しうる、水および酸素に対して気密のキャビティを製造するための装置および方法が提供される。
図中、同じ参照符号は、一般に異なる視点から見た同じ部分に適用する。図は、必ずしも一定の縮尺で記載されておらず、代わりに、一般に、開示された実施態様の原理が強調されて説明されている。以下の図には、さまざまな実施態様が記載されている。
開示された実施態様は、特別な実施態様に関連して、特に提示されかつ記載されたものであるが、当業者であれば、形式上の詳細なさまざまな変更が、係属された特許請求の範囲によって規定されたように、開示された実施態様の精神および範囲から逸脱することなく可能であることは、理解されるべきである。したがって、開示された実施態様の範囲は、係属された特許請求の範囲によって示されており、それゆえに、請求の範囲が意味する等価の範囲内での全ての変更は、本明細書中に包含される。
Claims (15)
- ・ 少なくとも1つのALDプリカーサ(302)および/または少なくとも1つのMLDプリカーサ(302)で被覆されている第1の担体(102)と
・ 第1の担体(102)のALDプリカーサ(302)および/またはMLDプリカーサ(302)に対して相補的である、少なくとも1つのALDプリカーサ(304)および/または少なくとも1つのMLDプリカーサ(304)で被覆されている第2の担体(104)
を有する装置であって、
・ 第1の担体(102)と第2の担体(104)とは、少なくとも部分的に、第1の担体(102)のALDプリカーサ(302)と第2の担体(104)のALDプリカーサ(304)との間の原子接合部(118)により、ALD層(118)が形成されるように接合されており、および/または第1の担体(102)のMLDプリカーサ(302)と第2の担体(104)のMLDプリカーサ(304)との間の原子接合部(118)により、MLD層(118)が形成されるように接合されている、前記装置。 - 第1の担体(102)および第2の担体(104)が、水および/または酸素に対して拡散バリア(108、114)を有する、請求項1記載の装置。
- 第1の担体(102)のALDプリカーサ(302)および/またはMLDプリカーサ(302)と第2の担体(104)のALDプリカーサ(304)および/またはMLDプリカーサ(304)との接合によるALD層(118)および/またはMLD層(118)には、前記のALD層(118)および/またはMLD層(118)が第1の担体(102)と第2の担体(104)との間でキャビティ(100)を囲むように、第2の担体(104)につながって隙間なしに第1の担体(102)が接合されている、請求項1または2記載の装置。
- キャビティ(100)が、水および酸素の拡散流(124、126、128、130)に対して気密であるように密閉されている、請求項3記載の装置。
- キャビティ(100)中で有機素子(402)、殊に有機発光ダイオード(402)がカプセル化されている、請求項3または4記載の装置。
- 第1の担体(102)の表面または第2の担体(104)の表面は、カプセル化すべき素子(402)の素子担体(406)であるかまたはカプセル化すべき素子(402)を有する、請求項1から5までのいずれか1項に記載の装置。
- 第1の担体(102)と第2の担体(104)との間のキャビティ(100)中で気密の接合部(118)により、水性液体がカプセル化されている、請求項3から6までのいずれか1項に記載の装置。
- ・ 少なくとも1つのALDプリカーサ(302)および/または少なくとも1つのMLDプリカーサ(302)を第1の担体(102)上に施与し;
・ 少なくとも1つのALDプリカーサ(304)および/または少なくとも1つのMLDプリカーサ(304)を、第2の担体(104)上に施与し、その際、前記のALDプリカーサ(304)および/またはMLDプリカーサ(304)が第1の担体(102)上に施与されているALDプリカーサ(302)および/またはMLDプリカーサ(302)に対して相補的であり;および
・ 前記の第1の担体(102)上に施与されている、少なくとも1つのALDプリカーサ(302)および/または少なくとも1つのMLDプリカーサ(302)と、前記の第2の担体(104)上に施与されている、相補的な少なくとも1つのALDプリカーサ(304)および/または相補的な少なくとも1つのMLDプリカーサ(304)とを接合する、装置を製造する方法であって、
第1の担体(102)と第2の担体(104)とは、少なくとも部分的に、第1の担体(102)上に施与されているALDプリカーサ(302)と第2の担体(104)上に施与されているALDプリカーサ(304)との間の原子接合により、ALD層(118)が形成されるように接合されており、および/または第1の担体(102)上に施与されているMLDプリカーサ(302)と第2の担体(104)上に施与されているMLDプリカーサ(116)との間の原子接合により、MLD層(118)が形成されるように接合されている、前記の装置を製造する方法。 - 第1の担体(102)の表面および/または第2の担体(104)の表面を構造化する、請求項8記載の方法。
- 第1の担体(102)の表面および/または第2の担体(104)の表面を複数の互いに異なるALDプリカーサで被覆し、および/または複数の互いに異なるMLDプリカーサで被覆する、請求項9記載の方法。
- 第1の担体(102)の化学的に構造化された表面および/または微細構成的に構造化された表面は、第2の担体(104)の化学的に構造化された表面および/または微細構成的に構造化された表面に対して相補的である、請求項9または10記載の方法。
- 第1の担体(202、208、212)の構造化および/または第2の担体(204、210)の構造化は、ALDプリカーサ(110、116)またはMLDプリカーサ(110、116)の局在的な加熱または接合プロセスの触媒反応により形成される、請求項9または11記載の方法。
- ALDプリカーサ(110、116)および/またはMLDプリカーサ(110、116)による第1の担体(102)または第2の担体(104)の表面被覆が、反応性ALDプリカーサ(302、304)および/または反応性MLDプリカーサ(302、304)を、第1の担体(102)および/または第2の担体(104)の表面上で形成する、請求項10から12までのいずれか1項に記載の方法。
- 第1の担体(102)のALDプリカーサ(302)および/またはMLDプリカーサ(302)と第2の担体(104)のALDプリカーサ(304)および/またはMLDプリカーサ(304)との接合によるALD層(118)および/またはMLD層(118)には、前記のALD層(118)および/またはMLD層(118)が第1の担体(102)と第2の担体(104)との間でキャビティ(100)を囲むように、第2の担体(104)につながって隙間なしに第1の担体(102)が接合される、請求項8から13までのいずれか1項に記載の方法。
- キャビティ(100)中で有機素子(402)をカプセル化する、請求項14記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012214411.0A DE102012214411B4 (de) | 2012-08-14 | 2012-08-14 | Vorrichtung und verfahren zum herstellen hermetisch dichter kavitäten |
DE102012214411.0 | 2012-08-14 | ||
PCT/EP2013/065220 WO2014026823A1 (de) | 2012-08-14 | 2013-07-18 | Vorrichtung und verfahren zum herstellen hermetisch dichter kavitäten |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015532765A true JP2015532765A (ja) | 2015-11-12 |
JP6072253B2 JP6072253B2 (ja) | 2017-02-01 |
Family
ID=48985724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015526915A Expired - Fee Related JP6072253B2 (ja) | 2012-08-14 | 2013-07-18 | 気密のキャビティを製造するための装置および方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9692009B2 (ja) |
JP (1) | JP6072253B2 (ja) |
KR (1) | KR101635126B1 (ja) |
CN (1) | CN104641485B (ja) |
DE (1) | DE102012214411B4 (ja) |
WO (1) | WO2014026823A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021524674A (ja) * | 2018-05-25 | 2021-09-13 | ネーデルランセ オルハニサチエ フォール トゥーヘパスト−ナツールウェーテンシャッペルック オンデルズク テーエヌオーNederlandse Organisatie voor toegepast−natuurwetenschappelijk onderzoek TNO | 伸縮可能な電子デバイス |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10804094B2 (en) | 2016-05-06 | 2020-10-13 | Applied Materials, Inc. | Methods of depositing SiCON with C, O and N compositional control |
DE102014112696B4 (de) * | 2014-09-03 | 2023-09-07 | Pictiva Displays International Limited | Organisches Bauelement |
WO2017141870A1 (ja) * | 2016-02-18 | 2017-08-24 | シャープ株式会社 | 有機el表示装置の製造方法及び有機el表示装置 |
JP6815158B2 (ja) * | 2016-10-13 | 2021-01-20 | 東京エレクトロン株式会社 | 酸化チタン膜の成膜方法およびハードマスクの形成方法 |
CN108074499A (zh) * | 2017-12-27 | 2018-05-25 | 周卫江 | 一种led模组及其封装方法 |
DE102019202721B4 (de) * | 2019-02-28 | 2021-03-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | 3d-flexfolien-package |
DE102019202716B4 (de) | 2019-02-28 | 2020-12-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Flex-folien-package mit coplanarer topologie für hochfrequenzsignale und verfahren zum herstellen eines derartigen flex-folien-packages |
DE102019202715A1 (de) * | 2019-02-28 | 2020-09-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Folienbasiertes package mit distanzausgleich |
DE102019202718B4 (de) | 2019-02-28 | 2020-12-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dünnes Dual-Folienpackage und Verfahren zum Herstellen desselben |
KR102224346B1 (ko) * | 2019-07-11 | 2021-03-05 | 한양대학교 산학협력단 | 유무기 하이브리드층, 이 층을 구비하는 유무기 적층체, 및 이 적층체를 가스 배리어로 구비하는 유기전자소자 |
CN110518143A (zh) * | 2019-08-19 | 2019-11-29 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板及其制备方法 |
CN110508155B (zh) * | 2019-08-21 | 2021-09-03 | 南京大学 | 一种锌基无机-有机杂化纳米多孔分离膜的制备方法 |
US11447865B2 (en) | 2020-11-17 | 2022-09-20 | Applied Materials, Inc. | Deposition of low-κ films |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003066868A (ja) * | 2001-08-24 | 2003-03-05 | Matsushita Electric Ind Co Ltd | 表示パネルおよびそれを用いた情報表示装置 |
JP2005011649A (ja) * | 2003-06-18 | 2005-01-13 | Sanyo Electric Co Ltd | 接着方法、その接着方法を利用可能なエレクトロルミネッセンスパネルの製造方法、及びエレクトロルミネッセンスパネル |
JP2009199902A (ja) * | 2008-02-21 | 2009-09-03 | Seiko Epson Corp | 有機発光装置および電子機器 |
JP2013218805A (ja) * | 2012-04-05 | 2013-10-24 | Sumitomo Chemical Co Ltd | 有機el装置及びその製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6503330B1 (en) * | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
JP4240276B2 (ja) | 2002-07-05 | 2009-03-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
US20050181212A1 (en) * | 2004-02-17 | 2005-08-18 | General Electric Company | Composite articles having diffusion barriers and devices incorporating the same |
US6872319B2 (en) * | 2002-09-30 | 2005-03-29 | Rockwell Scientific Licensing, Llc | Process for high yield fabrication of MEMS devices |
US20040189195A1 (en) * | 2003-03-24 | 2004-09-30 | Osram Opto Semiconductors Gmbh | Devices including, methods using, and compositions of reflowable getters |
US7581443B2 (en) * | 2005-07-20 | 2009-09-01 | The Boeing Company | Disc resonator gyroscopes |
US7109092B2 (en) * | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
WO2006014591A2 (en) * | 2004-07-08 | 2006-02-09 | Itn Energy Systems, Inc. | Permeation barriers for flexible electronics |
US7091568B2 (en) * | 2004-12-22 | 2006-08-15 | Freescale Semiconductor, Inc. | Electronic device including dielectric layer, and a process for forming the electronic device |
TW200636306A (en) * | 2005-02-03 | 2006-10-16 | Fuji Photo Film Co Ltd | Polarizing plate and liquid crystal display device |
US7647836B2 (en) * | 2005-02-10 | 2010-01-19 | Cardiomems, Inc. | Hermetic chamber with electrical feedthroughs |
US7767498B2 (en) | 2005-08-25 | 2010-08-03 | Vitex Systems, Inc. | Encapsulated devices and method of making |
US20080248648A1 (en) * | 2007-04-06 | 2008-10-09 | Thompson David M | Deposition precursors for semiconductor applications |
JP5220106B2 (ja) * | 2007-06-22 | 2013-06-26 | ザ・リージエンツ・オブ・ザ・ユニバーシティ・オブ・コロラド | 原子層堆積法及び分子層堆積法を用いて製造された有機電子デバイス用の保護被膜 |
US20090081356A1 (en) * | 2007-09-26 | 2009-03-26 | Fedorovskaya Elena A | Process for forming thin film encapsulation layers |
US7858144B2 (en) * | 2007-09-26 | 2010-12-28 | Eastman Kodak Company | Process for depositing organic materials |
JP4471002B2 (ja) * | 2008-01-23 | 2010-06-02 | セイコーエプソン株式会社 | 接合体の形成方法 |
GB2470854A (en) | 2008-04-23 | 2010-12-08 | Agilent Technologies Inc | Microstructured separation element with a porous surface coating |
FR2933538B1 (fr) * | 2008-07-07 | 2012-09-21 | Commissariat Energie Atomique | Dispositif electroluminescent d'affichage, d'eclairage ou de signalisation, et son procede de fabrication |
US8926906B2 (en) | 2008-07-21 | 2015-01-06 | Concordia University | Microfluidic device and method for fabricating the microfluidic device |
US20110291544A1 (en) * | 2010-05-31 | 2011-12-01 | Industrial Technology Research Institute | Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof |
-
2012
- 2012-08-14 DE DE102012214411.0A patent/DE102012214411B4/de not_active Expired - Fee Related
-
2013
- 2013-07-18 JP JP2015526915A patent/JP6072253B2/ja not_active Expired - Fee Related
- 2013-07-18 WO PCT/EP2013/065220 patent/WO2014026823A1/de active Application Filing
- 2013-07-18 US US14/417,169 patent/US9692009B2/en active Active
- 2013-07-18 KR KR1020157004232A patent/KR101635126B1/ko active IP Right Grant
- 2013-07-18 CN CN201380043579.3A patent/CN104641485B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003066868A (ja) * | 2001-08-24 | 2003-03-05 | Matsushita Electric Ind Co Ltd | 表示パネルおよびそれを用いた情報表示装置 |
JP2005011649A (ja) * | 2003-06-18 | 2005-01-13 | Sanyo Electric Co Ltd | 接着方法、その接着方法を利用可能なエレクトロルミネッセンスパネルの製造方法、及びエレクトロルミネッセンスパネル |
JP2009199902A (ja) * | 2008-02-21 | 2009-09-03 | Seiko Epson Corp | 有機発光装置および電子機器 |
JP2013218805A (ja) * | 2012-04-05 | 2013-10-24 | Sumitomo Chemical Co Ltd | 有機el装置及びその製造方法 |
Non-Patent Citations (2)
Title |
---|
JPN5015008915; SUNG GAP IM: 'A CONFORMAL NANO-ADHESIVE VIA INTIATED CHEMICAL VAPOR DEPOSITION FOR MICROFLUIDIC DEVICES' LAB ON A CHIP V9, 20081107, P411-416, ROYAL SOCIETY OF CHEMISTRY * |
JPN5015008916; JINGJING XU: 'AMINE FUNCTIONALIZATION BY INITIATED CHEMICAL VAPOR DEPOSITION (ICVD) 以下備考' [ONLINE] , 20110613 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021524674A (ja) * | 2018-05-25 | 2021-09-13 | ネーデルランセ オルハニサチエ フォール トゥーヘパスト−ナツールウェーテンシャッペルック オンデルズク テーエヌオーNederlandse Organisatie voor toegepast−natuurwetenschappelijk onderzoek TNO | 伸縮可能な電子デバイス |
JP7506608B2 (ja) | 2018-05-25 | 2024-06-26 | ネーデルランセ オルハニサチエ フォール トゥーヘパスト-ナツールウェーテンシャッペルック オンデルズク テーエヌオー | 伸縮可能な電子デバイス |
Also Published As
Publication number | Publication date |
---|---|
KR101635126B1 (ko) | 2016-06-30 |
DE102012214411A1 (de) | 2014-02-20 |
US9692009B2 (en) | 2017-06-27 |
KR20150038131A (ko) | 2015-04-08 |
CN104641485A (zh) | 2015-05-20 |
WO2014026823A1 (de) | 2014-02-20 |
DE102012214411B4 (de) | 2022-05-25 |
JP6072253B2 (ja) | 2017-02-01 |
CN104641485B (zh) | 2017-03-08 |
US20150207101A1 (en) | 2015-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6072253B2 (ja) | 気密のキャビティを製造するための装置および方法 | |
Zou et al. | Boosting perovskite light-emitting diode performance via tailoring interfacial contact | |
Gong et al. | High-performance all-inorganic CsPbCl3 perovskite nanocrystal photodetectors with superior stability | |
Hong et al. | Low-dimensional halide perovskites: review and issues | |
Li et al. | First-principles calculations of the electronic properties of SiC-based bilayer and trilayer heterostructures | |
Chen et al. | Flexible optoelectronic devices based on metal halide perovskites | |
Seo et al. | Laminated graphene films for flexible transparent thin film encapsulation | |
Neupane et al. | 2D organic semiconductors, the future of green nanotechnology | |
Choi et al. | Reduced water vapor transmission rate of graphene gas barrier films for flexible organic field-effect transistors | |
Yang et al. | Realization of thin film encapsulation by atomic layer deposition of Al2O3 at low temperature | |
US9530987B2 (en) | Structure and method for packaging organic optoelectronic device | |
Wei et al. | In situ light-initiated ligands cross-linking enables efficient all-solution-processed perovskite light-emitting diodes | |
US20130059155A1 (en) | Gas barrier thin film, electronic device including the same, and method of preparing gas barrier thin film | |
TW200941789A (en) | Device with encapsulation arrangement | |
US20120314726A1 (en) | Laser diode using zinc oxide nanorods and manufacturing method thereof | |
CN1728404A (zh) | Tft、有该tft的电子器件及有该tft的平板显示器件 | |
TWI496826B (zh) | 具有高阻隔性的封裝材料 | |
Yi et al. | Roll-transferred graphene encapsulant for robust perovskite solar cells | |
CN104347820A (zh) | Amoled器件及制备方法 | |
US20190051862A1 (en) | Display panel and method of manufacturing same | |
Reddy et al. | Residue-and-polymer-free graphene transfer: DNA-CTMA/graphene/GaN bio-hybrid photodiode for light-sensitive applications | |
JP5935263B2 (ja) | ガスバリア性フィルム、ガスバリア性フィルムの製造方法、及びガスバリア性フィルムを有する有機電子デバイス | |
An et al. | Strategy for the fabrication of perovskite-based green micro LED for ultra high-resolution displays by micro-molding process and surface passivation | |
Ghosh et al. | Heavy mediator at quantum dot/graphene heterojunction for efficient charge carrier transfer: Alternative approach for high-performance optoelectronic devices | |
Kim et al. | 2D Materials in the display industry: status and prospects |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160310 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160411 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160706 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161205 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161227 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6072253 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |