JP2015531957A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2015531957A5 JP2015531957A5 JP2015532159A JP2015532159A JP2015531957A5 JP 2015531957 A5 JP2015531957 A5 JP 2015531957A5 JP 2015532159 A JP2015532159 A JP 2015532159A JP 2015532159 A JP2015532159 A JP 2015532159A JP 2015531957 A5 JP2015531957 A5 JP 2015531957A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- voltage
- bit line
- memory cell
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 claims description 26
- 239000003990 capacitor Substances 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261702338P | 2012-09-18 | 2012-09-18 | |
| US61/702,338 | 2012-09-18 | ||
| US14/029,741 US9129695B2 (en) | 2012-09-18 | 2013-09-17 | Self-biasing current reference |
| US14/029,741 | 2013-09-17 | ||
| PCT/US2013/060302 WO2014047114A1 (en) | 2012-09-18 | 2013-09-18 | Self-biasing current reference |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015531957A JP2015531957A (ja) | 2015-11-05 |
| JP2015531957A5 true JP2015531957A5 (https=) | 2016-11-10 |
Family
ID=50274321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015532159A Ceased JP2015531957A (ja) | 2012-09-18 | 2013-09-18 | 自己バイアス電流基準 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9129695B2 (https=) |
| EP (1) | EP2898512A1 (https=) |
| JP (1) | JP2015531957A (https=) |
| KR (1) | KR20150058408A (https=) |
| CN (1) | CN104704571A (https=) |
| WO (1) | WO2014047114A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9129680B2 (en) * | 2012-09-18 | 2015-09-08 | Microchip Technology Incorporated | Self-biasing multi-reference |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6052307A (en) * | 1998-08-11 | 2000-04-18 | Texas Instruments Incorporated | Leakage tolerant sense amplifier |
| JP2001229686A (ja) * | 1999-12-08 | 2001-08-24 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置 |
| US6407946B2 (en) * | 1999-12-08 | 2002-06-18 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile semiconductor memory device |
| US6891768B2 (en) | 2002-11-13 | 2005-05-10 | Hewlett-Packard Development Company, L.P. | Power-saving reading of magnetic memory devices |
| FR2888659A1 (fr) * | 2005-07-18 | 2007-01-19 | St Microelectronics Sa | Amplificateur de lecture pour memoire non volatile |
| KR100781984B1 (ko) | 2006-11-03 | 2007-12-06 | 삼성전자주식회사 | 셀프 레퍼런스를 갖는 센스앰프 회로 및 그에 의한 센싱방법 |
| US7498885B2 (en) * | 2006-11-03 | 2009-03-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Voltage controlled oscillator with gain compensation |
| JP5231972B2 (ja) * | 2008-12-18 | 2013-07-10 | 力晶科技股▲ふん▼有限公司 | 不揮発性半導体記憶装置 |
| US8467253B2 (en) | 2010-05-24 | 2013-06-18 | Hewlett-Packard Development Company, L.P. | Reading memory elements within a crossbar array |
-
2013
- 2013-09-17 US US14/029,741 patent/US9129695B2/en active Active
- 2013-09-18 CN CN201380050999.4A patent/CN104704571A/zh active Pending
- 2013-09-18 EP EP13770772.5A patent/EP2898512A1/en not_active Withdrawn
- 2013-09-18 JP JP2015532159A patent/JP2015531957A/ja not_active Ceased
- 2013-09-18 KR KR1020157009899A patent/KR20150058408A/ko not_active Withdrawn
- 2013-09-18 WO PCT/US2013/060302 patent/WO2014047114A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015531958A5 (https=) | ||
| JP2013254945A5 (https=) | ||
| TWI525636B (zh) | 用於讀出放大器的低電壓電流參考產生器 | |
| JP2010097606A5 (ja) | 半導体装置 | |
| JP2013009285A5 (https=) | ||
| WO2012171989A3 (en) | Non-volatile memory element | |
| JP2012257197A5 (ja) | 半導体装置 | |
| JP2008293594A5 (https=) | ||
| JP2012079401A5 (ja) | 半導体装置及びその検査方法 | |
| CN106601285B (zh) | 存储器装置及其操作方法 | |
| JP2012142066A5 (https=) | ||
| JP2013008431A5 (ja) | 記憶装置 | |
| JP2016528660A5 (https=) | ||
| US20160260473A1 (en) | Semiconductor memory device | |
| JP2016146227A5 (ja) | 半導体装置 | |
| US9129680B2 (en) | Self-biasing multi-reference | |
| JP2014160526A5 (ja) | 半導体装置 | |
| EP3264416A3 (en) | High speed sensing for advanced nanometer flash memory device | |
| TWI614762B (zh) | 用於自我參考之匹配線感測的匹配線預充電架構 | |
| JP2013131286A5 (ja) | 記憶装置 | |
| JP2010267328A5 (https=) | ||
| JP2012253753A5 (https=) | ||
| JP2015531957A5 (https=) | ||
| JP2013257933A5 (ja) | 記憶装置 | |
| CN103411680A (zh) | 一种红外焦平面阵列及其读出电路的使能控制电路 |