CN104704571A - 自偏置电流参考 - Google Patents
自偏置电流参考 Download PDFInfo
- Publication number
- CN104704571A CN104704571A CN201380050999.4A CN201380050999A CN104704571A CN 104704571 A CN104704571 A CN 104704571A CN 201380050999 A CN201380050999 A CN 201380050999A CN 104704571 A CN104704571 A CN 104704571A
- Authority
- CN
- China
- Prior art keywords
- transistor
- bit line
- voltage
- current
- reference current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Read Only Memory (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261702338P | 2012-09-18 | 2012-09-18 | |
| US61/702,338 | 2012-09-18 | ||
| US14/029,741 US9129695B2 (en) | 2012-09-18 | 2013-09-17 | Self-biasing current reference |
| US14/029,741 | 2013-09-17 | ||
| PCT/US2013/060302 WO2014047114A1 (en) | 2012-09-18 | 2013-09-18 | Self-biasing current reference |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104704571A true CN104704571A (zh) | 2015-06-10 |
Family
ID=50274321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380050999.4A Pending CN104704571A (zh) | 2012-09-18 | 2013-09-18 | 自偏置电流参考 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9129695B2 (https=) |
| EP (1) | EP2898512A1 (https=) |
| JP (1) | JP2015531957A (https=) |
| KR (1) | KR20150058408A (https=) |
| CN (1) | CN104704571A (https=) |
| WO (1) | WO2014047114A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9129680B2 (en) * | 2012-09-18 | 2015-09-08 | Microchip Technology Incorporated | Self-biasing multi-reference |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080106345A1 (en) * | 2006-11-03 | 2008-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Voltage controlled oscillator with gain compensation |
| US20110286259A1 (en) * | 2010-05-24 | 2011-11-24 | Hewlett-Packard Development Company, L.P. | Reading Memory Elements Within a Crossbar Array |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6052307A (en) * | 1998-08-11 | 2000-04-18 | Texas Instruments Incorporated | Leakage tolerant sense amplifier |
| JP2001229686A (ja) * | 1999-12-08 | 2001-08-24 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置 |
| US6407946B2 (en) * | 1999-12-08 | 2002-06-18 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile semiconductor memory device |
| US6891768B2 (en) | 2002-11-13 | 2005-05-10 | Hewlett-Packard Development Company, L.P. | Power-saving reading of magnetic memory devices |
| FR2888659A1 (fr) * | 2005-07-18 | 2007-01-19 | St Microelectronics Sa | Amplificateur de lecture pour memoire non volatile |
| KR100781984B1 (ko) | 2006-11-03 | 2007-12-06 | 삼성전자주식회사 | 셀프 레퍼런스를 갖는 센스앰프 회로 및 그에 의한 센싱방법 |
| JP5231972B2 (ja) * | 2008-12-18 | 2013-07-10 | 力晶科技股▲ふん▼有限公司 | 不揮発性半導体記憶装置 |
-
2013
- 2013-09-17 US US14/029,741 patent/US9129695B2/en active Active
- 2013-09-18 CN CN201380050999.4A patent/CN104704571A/zh active Pending
- 2013-09-18 EP EP13770772.5A patent/EP2898512A1/en not_active Withdrawn
- 2013-09-18 JP JP2015532159A patent/JP2015531957A/ja not_active Ceased
- 2013-09-18 KR KR1020157009899A patent/KR20150058408A/ko not_active Withdrawn
- 2013-09-18 WO PCT/US2013/060302 patent/WO2014047114A1/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080106345A1 (en) * | 2006-11-03 | 2008-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Voltage controlled oscillator with gain compensation |
| US20110286259A1 (en) * | 2010-05-24 | 2011-11-24 | Hewlett-Packard Development Company, L.P. | Reading Memory Elements Within a Crossbar Array |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014047114A1 (en) | 2014-03-27 |
| KR20150058408A (ko) | 2015-05-28 |
| US20140078824A1 (en) | 2014-03-20 |
| US9129695B2 (en) | 2015-09-08 |
| JP2015531957A (ja) | 2015-11-05 |
| EP2898512A1 (en) | 2015-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105244051B (zh) | 感测放大器 | |
| CN104685568B (zh) | 用于感测存储器单元的自偏置多参考 | |
| CN104217744B (zh) | 电流感测放大器及其感测方法 | |
| CN101740095B (zh) | 存储电路及用于存储电路的追踪电路 | |
| KR101623296B1 (ko) | 여분의 감지 증폭기를 갖는 메모리 | |
| CN104778976B (zh) | 非易失性存储器 | |
| US8792293B2 (en) | Single-ended sense amplifier for solid-state memories | |
| CN101383182A (zh) | 半导体存储装置 | |
| US7352618B2 (en) | Multi-level cell memory device and associated read method | |
| CN105741877B (zh) | 感测电路、存储装置以及操作存储装置的方法 | |
| US7986579B2 (en) | Memory device and method thereof | |
| CN104112466A (zh) | 一种应用于mtp存储器的灵敏放大器 | |
| KR20080049662A (ko) | 반도체 기억 장치 | |
| CN104979000A (zh) | 感测装置及其数据感测方法 | |
| US20250182798A1 (en) | Sense amplifier | |
| US9129695B2 (en) | Self-biasing current reference | |
| CN100505101C (zh) | 一种用于电可擦除可编程只读存储器的灵敏放大器 | |
| CN1822227B (zh) | 多电平单元存储器器件及相关读取方法 | |
| CN101399074B (zh) | 集成电路中存储器电路及其控制方法 | |
| TWI555021B (zh) | 感測裝置及其資料感測方法 | |
| TW201530547A (zh) | 快閃記憶體裝置及其資料讀取方法 | |
| TW201515003A (zh) | 感測放大器及其感測方法 | |
| CN102169716B (zh) | 可操作于超负荷应力模式的存储器装置 | |
| CN101197192A (zh) | 闪存的写入电路与其写入方法 | |
| CN106340320A (zh) | 一种存储器读取方法及读取系统 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150610 |