JP2015529011A - 多孔性低誘電率膜の誘電率を低減させる方法 - Google Patents

多孔性低誘電率膜の誘電率を低減させる方法 Download PDF

Info

Publication number
JP2015529011A
JP2015529011A JP2015521627A JP2015521627A JP2015529011A JP 2015529011 A JP2015529011 A JP 2015529011A JP 2015521627 A JP2015521627 A JP 2015521627A JP 2015521627 A JP2015521627 A JP 2015521627A JP 2015529011 A JP2015529011 A JP 2015529011A
Authority
JP
Japan
Prior art keywords
dielectric constant
dielectric film
low dielectric
silicon
exposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015521627A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015529011A5 (OSRAM
Inventor
ケルヴィン チャン，
ケルヴィン チャン，
チン シュイ，
チン シュイ，
カン サブ イム，
カン サブ イム，
アレクサンドロス ティー． デモス，
アレクサンドロス ティー． デモス，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2015529011A publication Critical patent/JP2015529011A/ja
Publication of JP2015529011A5 publication Critical patent/JP2015529011A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
    • H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2015521627A 2012-07-13 2013-06-18 多孔性低誘電率膜の誘電率を低減させる方法 Pending JP2015529011A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261671191P 2012-07-13 2012-07-13
US61/671,191 2012-07-13
PCT/US2013/046285 WO2014011364A1 (en) 2012-07-13 2013-06-18 Method to reduce dielectric constant of a porous low-k film

Publications (2)

Publication Number Publication Date
JP2015529011A true JP2015529011A (ja) 2015-10-01
JP2015529011A5 JP2015529011A5 (OSRAM) 2016-08-04

Family

ID=49914335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015521627A Pending JP2015529011A (ja) 2012-07-13 2013-06-18 多孔性低誘電率膜の誘電率を低減させる方法

Country Status (6)

Country Link
US (1) US8993444B2 (OSRAM)
JP (1) JP2015529011A (OSRAM)
KR (1) KR102109482B1 (OSRAM)
CN (1) CN104471687A (OSRAM)
TW (1) TWI581331B (OSRAM)
WO (1) WO2014011364A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115190919A (zh) * 2020-04-20 2022-10-14 应用材料公司 具有共用的气体输送和排气系统的多个热cvd腔室

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5905476B2 (ja) * 2010-10-19 2016-04-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｎａｎｏｃｕｒｅｕｖチャンバ用の石英シャワーヘッド
US9318364B2 (en) * 2014-01-13 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device metallization systems and methods
US9362107B2 (en) * 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
TWI752221B (zh) * 2017-04-27 2022-01-11 日商東京威力科創股份有限公司 使用有機矽酸鹽做為圖案化膜之方法及系統
US11469100B2 (en) 2019-05-30 2022-10-11 Applied Materials, Inc. Methods of post treating dielectric films with microwave radiation
US12410523B1 (en) * 2024-03-29 2025-09-09 Applied Materials, Inc. Integrated low k recovery and ALD metal deposition process for advanced technology node

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340651A (ja) * 1999-05-28 2000-12-08 Hitachi Chem Co Ltd 低誘電率膜の製造法
JP2002324838A (ja) * 2001-03-15 2002-11-08 Chartered Semiconductor Mfg Ltd デュアルダマシン相互接続における有機物誘電体の密着性を改良する方法
JP2006049798A (ja) * 2004-07-02 2006-02-16 Tokyo Electron Ltd 溝配線または接続孔を有する半導体装置の製造方法
JP2006077245A (ja) * 2004-09-07 2006-03-23 Rohm & Haas Electronic Materials Llc 多孔質物質およびその製造方法
JP2010287655A (ja) * 2009-06-10 2010-12-24 Toshiba Corp 半導体装置の製造方法
US20110117678A1 (en) * 2006-10-30 2011-05-19 Varadarajan Bhadri N Carbon containing low-k dielectric constant recovery using uv treatment

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475930B1 (en) * 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
EP1172847A3 (en) * 2000-07-10 2004-07-28 Interuniversitair Micro-Elektronica Centrum Vzw A method to produce a porous oxygen-silicon layer
US7541200B1 (en) * 2002-01-24 2009-06-02 Novellus Systems, Inc. Treatment of low k films with a silylating agent for damage repair
US7709371B2 (en) * 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US7049247B2 (en) * 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US7678682B2 (en) * 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
CN1787186A (zh) * 2004-12-09 2006-06-14 富士通株式会社 半导体器件制造方法
US20060251827A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US7482281B2 (en) * 2005-09-29 2009-01-27 Tokyo Electron Limited Substrate processing method
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
US20090061633A1 (en) 2007-08-31 2009-03-05 Fujitsu Limited Method of manufacturing semiconductor device
JP5304033B2 (ja) * 2007-08-31 2013-10-02 富士通株式会社 半導体装置の製造方法
US20100065758A1 (en) 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
US20100087062A1 (en) 2008-10-06 2010-04-08 Applied Materials, Inc. High temperature bd development for memory applications
US8242460B2 (en) * 2010-03-29 2012-08-14 Tokyo Electron Limited Ultraviolet treatment apparatus
KR101928348B1 (ko) 2011-04-08 2018-12-12 어플라이드 머티어리얼스, 인코포레이티드 자외선 처리, 화학적 처리, 및 증착을 위한 장치 및 방법
US8492170B2 (en) * 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
US8216861B1 (en) 2011-06-28 2012-07-10 Applied Materials, Inc. Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340651A (ja) * 1999-05-28 2000-12-08 Hitachi Chem Co Ltd 低誘電率膜の製造法
JP2002324838A (ja) * 2001-03-15 2002-11-08 Chartered Semiconductor Mfg Ltd デュアルダマシン相互接続における有機物誘電体の密着性を改良する方法
JP2006049798A (ja) * 2004-07-02 2006-02-16 Tokyo Electron Ltd 溝配線または接続孔を有する半導体装置の製造方法
JP2006077245A (ja) * 2004-09-07 2006-03-23 Rohm & Haas Electronic Materials Llc 多孔質物質およびその製造方法
US20110117678A1 (en) * 2006-10-30 2011-05-19 Varadarajan Bhadri N Carbon containing low-k dielectric constant recovery using uv treatment
JP2010287655A (ja) * 2009-06-10 2010-12-24 Toshiba Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115190919A (zh) * 2020-04-20 2022-10-14 应用材料公司 具有共用的气体输送和排气系统的多个热cvd腔室
JP2023517446A (ja) * 2020-04-20 2023-04-26 アプライド マテリアルズ インコーポレイテッド 共有供給及び排気システムを備えたマルチ熱ｃｖｄチャンバ
JP7462763B2 (ja) 2020-04-20 2024-04-05 アプライド マテリアルズ インコーポレイテッド 共有供給及び排気システムを備えたマルチ熱ｃｖｄチャンバ
US12037701B2 (en) 2020-04-20 2024-07-16 Applied Materials, Inc. Multi-thermal CVD chambers with shared gas delivery and exhaust system

Also Published As

Publication number Publication date
TWI581331B (zh) 2017-05-01
WO2014011364A1 (en) 2014-01-16
CN104471687A (zh) 2015-03-25
TW201405658A (zh) 2014-02-01
US8993444B2 (en) 2015-03-31
US20140017895A1 (en) 2014-01-16
KR20150035509A (ko) 2015-04-06
KR102109482B1 (ko) 2020-05-12

Similar Documents

Publication Publication Date Title
JP6422536B2 (ja) 気相化学曝露による低誘電率誘電体の損傷修復
US7851232B2 (en) UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
KR102109482B1 (ko) 다공성 저-ｋ 막의 유전 상수를 감소시키기 위한 방법
JP5905476B2 (ja) Ｎａｎｏｃｕｒｅｕｖチャンバ用の石英シャワーヘッド
US8481422B2 (en) Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer
US8702870B2 (en) Superimposition of rapid periodic and extensive post multiple substrate UV-ozone clean sequences for high throughput and stable substrate to substrate performance
US8657961B2 (en) Method for UV based silylation chamber clean
KR20140010449A (ko) 손상된 저 k 필름들의 복구 및 기공 밀봉을 위한 자외선 보조형 시릴화
CN102770580A (zh) 藉由等离子体增强化学气相沉积使用含有具有机官能基的硅的杂化前驱物所形成的超低介电材料
US10373823B2 (en) Deployment of light energy within specific spectral bands in specific sequences for deposition, treatment and removal of materials
TWI387050B (zh) 低介電係數絕緣膜之損壞復原方法及半導體裝置之製造方法
WO2015084538A1 (en) Uv-assisted photochemical vapor deposition for damaged low k films pore sealing
JP2004363558A (ja) 半導体装置の製造方法およびプラズマエッチング装置のクリーニング方法
WO2009158169A1 (en) Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance
US20200381248A1 (en) Methods of post treating dielectric films with microwave radiation
JP2012204693A (ja) 基板処理装置及び半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160616

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160616

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170517

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170926

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20171225

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180226

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180605