JP2015526770A - 投影露光装置の光学素子を保護するためのブロック素子 - Google Patents
投影露光装置の光学素子を保護するためのブロック素子 Download PDFInfo
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- JP2015526770A JP2015526770A JP2015529071A JP2015529071A JP2015526770A JP 2015526770 A JP2015526770 A JP 2015526770A JP 2015529071 A JP2015529071 A JP 2015529071A JP 2015529071 A JP2015529071 A JP 2015529071A JP 2015526770 A JP2015526770 A JP 2015526770A
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- 230000004888 barrier function Effects 0.000 claims abstract description 41
- 238000012544 monitoring process Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000001393 microlithography Methods 0.000 claims abstract description 4
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract 2
- 230000001902 propagating effect Effects 0.000 claims abstract 2
- 238000004146 energy storage Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
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- 230000005855 radiation Effects 0.000 description 40
- 238000005286 illumination Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000012806 monitoring device Methods 0.000 description 12
- 230000003595 spectral effect Effects 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 210000001747 pupil Anatomy 0.000 description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
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- 230000008859 change Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
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- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (13)
- マイクロリソグラフィ用の投影露光装置、特にEUV投影露光装置であって、該投影露光装置を動作させる電磁放射を伝搬させるビーム経路と、前記ビーム経路に配置される少なくとも1つのフィルタ(55)とを備え、前記投影露光装置は前記フィルタを監視する少なくとも1つのセンサデバイスをさらに備え、
待機位置とバリア位置との間を移動可能な少なくとも1つのブロック素子(60)が設けられ、該ブロック素子の移動は少なくとも前記センサデバイスの信号に依存して生じさせることができ、前記投影露光装置は、前記ブロック素子を駆動させる開ループおよび/または閉ループ制御ユニット並びにアクチュエータを備え、該アクチュエータは駆動エネルギーを貯蔵するエネルギー貯蔵を有することを特徴とする投影露光装置。 - 請求項1に記載の投影露光装置において、前記アクチュエータが電気エネルギーまたはフローエネルギーに基づいて駆動エネルギーを提供することを特徴とする投影露光装置。
- 請求項1または2に記載の投影露光装置において、前記アクチュエータが電気モータ、リニアモータ、電磁石、圧電アクチュエータ、磁歪アクチュエータ、 電歪アクチュエータ、空気圧駆動デバイスおよびバルブから成る群より選択されることを特徴とする投影露光装置。
- 請求項1〜3のいずれか1項に記載の投影露光装置において、前記エネルギー貯蔵が、機械エネルギー貯蔵、機械バネ(403,453)、ガス圧アキュムレータおよび電気エネルギー貯蔵から成る群より選択されることを特徴とする投影露光装置。
- 請求項1〜4のいずれか1項に記載の投影露光装置において、前記ブロック素子がパネル素子(401)と軸受装置(402、454)とを有することを特徴とする投影露光装置。
- 請求項5に記載の投影露光装置において、前記軸受装置が回転軸受(454)および/または直線運動のためのリニア軸受(402)および/または組み合わせ運動、特に角度加速運動または螺旋運動のための軸受を有することを特徴とする投影露光装置。
- 請求項5または6に記載の投影露光装置において、前記軸受装置が摩擦の低減された、または摩擦のない軸受、特に空気軸受、または少なくとも1つのコンポーネントがDLC(ダイヤモンド状炭素)層を有する軸受コンポーネントを含む軸受を有することを特徴とする投影露光装置。
- 請求項5〜7のいずれか1項に記載の投影露光装置において、前記パネル素子(401)の大きさは、25cm2〜3000cm2、特に250cm2〜2500cm2、好適には400cm2〜1000cm2であることを特徴とする投影露光装置。
- 請求項1〜8のいずれか1項に記載の投影露光装置において、前記ブロック素子が前記待機位置から前記バリア位置へ移動する駆動時間は50ms以下であることを特徴とする投影露光装置。
- 請求項1〜9のいずれか1項に記載の投影露光装置において、複数のブロック素子(480〜483)、特に2〜6のブロック素子が共にバリア領域を形成するように配置されることを特徴とする投影露光装置。
- 請求項1〜10のいずれか1項に記載の投影露光装置において、複数のブロック素子(480〜483)が前後に、および/または横方向にオフセットして、および/または相互に角度をなして配置されることを特徴とする投影露光装置。
- 請求項1〜11のいずれか1項に記載の投影露光装置において、複数のブロック素子が前記待機位置から前記バリア位置への、その移動方向が少なくとも相互に部分的に対向する、または相互に角度をなすような移動シーケンスを有するように配置されることを特徴とする投影露光装置。
- 特に請求項1〜12のいずれか1項に記載の投影露光装置を動作させる方法であって、ビーム経路に配置されたフィルタの破損または損傷を少なくとも1つのセンサデバイスによって監視し、少なくとも1つのブロック素子を設け、これは待機位置とバリア位置との間を前記センサデバイスの信号に依存して移動し、前記バリア位置において前記投影露光装置の領域を遮断し、前記フィルタの破損物が前記投影露光装置の遮断領域に入り込まないようにする方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261696849P | 2012-09-05 | 2012-09-05 | |
DE102012215697.6A DE102012215697A1 (de) | 2012-09-05 | 2012-09-05 | Blockierelement zum Schutz von optischen Elementen in Projektionsbelichtungsanlagen |
DE102012215697.6 | 2012-09-05 | ||
US61/696,849 | 2012-09-05 | ||
PCT/EP2013/068383 WO2014037449A1 (en) | 2012-09-05 | 2013-09-05 | Blocking element for protecting optical elements in projection exposure apparatuses |
Publications (2)
Publication Number | Publication Date |
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JP2015526770A true JP2015526770A (ja) | 2015-09-10 |
JP6349313B2 JP6349313B2 (ja) | 2018-06-27 |
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JP2015529071A Active JP6349313B2 (ja) | 2012-09-05 | 2013-09-05 | 投影露光装置の光学素子を保護するためのブロック素子 |
Country Status (4)
Country | Link |
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US (1) | US9684243B2 (ja) |
JP (1) | JP6349313B2 (ja) |
DE (1) | DE102012215697A1 (ja) |
WO (1) | WO2014037449A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102015220144A1 (de) * | 2015-10-16 | 2017-04-20 | Carl Zeiss Smt Gmbh | Optisches System und Lithographieanlage |
DE102015221929A1 (de) * | 2015-11-09 | 2017-05-11 | Carl Zeiss Smt Gmbh | Anordnung für eine Lithographieanlage und Lithographieanlage |
Citations (4)
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JPS6435299A (en) * | 1987-07-30 | 1989-02-06 | Nec Corp | Protection of x-ray source and device therefor |
JPS6461700A (en) * | 1987-08-31 | 1989-03-08 | Nec Corp | Synchrotron radiation light exposing device |
US20100128367A1 (en) * | 2006-09-28 | 2010-05-27 | Carl Zeiss Smt Ag | Projection objective for a microlithography apparatus and method |
JP2012504329A (ja) * | 2008-09-30 | 2012-02-16 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 半導体部品を製造するためのマイクロリソグラフィ用の投影露光装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10116059B4 (de) * | 2001-03-30 | 2007-03-01 | Tesa Scribos Gmbh | Lithograph mit bewegter Linse und Verfahren zum Herstellen digitaler Hologramme in einem Speichermedium |
US7372623B2 (en) | 2005-03-29 | 2008-05-13 | Asml Netherlands B.V. | Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
US7653095B2 (en) * | 2005-06-30 | 2010-01-26 | Cymer, Inc. | Active bandwidth control for a laser |
GB0605725D0 (en) | 2006-03-23 | 2006-05-03 | Boc Group Plc | Spectral filter repair |
DE102008041628A1 (de) | 2007-09-14 | 2009-03-19 | Carl Zeiss Smt Ag | Verfahren zur Reinigung von Vakuumkammern und Vakuumkammer |
US20130194562A1 (en) * | 2010-10-14 | 2013-08-01 | Asml Netherlands B.V. | Lithographic Apparatus and Device Manufacturing Method |
DE102012210035A1 (de) | 2012-06-14 | 2013-05-23 | Carl Zeiss Smt Gmbh | EUV-Lithographieanlage und Verfahren zum Detektieren von Partikeln in einer EUV-Lithographieanlage |
-
2012
- 2012-09-05 DE DE102012215697.6A patent/DE102012215697A1/de not_active Withdrawn
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2013
- 2013-09-05 JP JP2015529071A patent/JP6349313B2/ja active Active
- 2013-09-05 WO PCT/EP2013/068383 patent/WO2014037449A1/en active Application Filing
-
2015
- 2015-03-05 US US14/639,828 patent/US9684243B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6435299A (en) * | 1987-07-30 | 1989-02-06 | Nec Corp | Protection of x-ray source and device therefor |
JPS6461700A (en) * | 1987-08-31 | 1989-03-08 | Nec Corp | Synchrotron radiation light exposing device |
US20100128367A1 (en) * | 2006-09-28 | 2010-05-27 | Carl Zeiss Smt Ag | Projection objective for a microlithography apparatus and method |
JP2012504329A (ja) * | 2008-09-30 | 2012-02-16 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 半導体部品を製造するためのマイクロリソグラフィ用の投影露光装置 |
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Publication number | Publication date |
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US9684243B2 (en) | 2017-06-20 |
US20150177626A1 (en) | 2015-06-25 |
DE102012215697A1 (de) | 2014-03-06 |
JP6349313B2 (ja) | 2018-06-27 |
WO2014037449A1 (en) | 2014-03-13 |
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