JP2015515641A5 - - Google Patents
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- JP2015515641A5 JP2015515641A5 JP2014558744A JP2014558744A JP2015515641A5 JP 2015515641 A5 JP2015515641 A5 JP 2015515641A5 JP 2014558744 A JP2014558744 A JP 2014558744A JP 2014558744 A JP2014558744 A JP 2014558744A JP 2015515641 A5 JP2015515641 A5 JP 2015515641A5
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- monoatomic layer
- layer
- region
- monoatomic
- gas mixture
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- 150000001875 compounds Chemical class 0.000 claims 9
- 239000000203 mixture Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 7
- 239000007789 gas Substances 0.000 claims 6
- 238000000231 atomic layer deposition Methods 0.000 claims 3
- 239000000376 reactant Substances 0.000 claims 3
- 239000012495 reaction gas Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000010926 purge Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Claims (16)
（ａ）基板表面上に化合物層の第１単原子層を形成するために、処理チャンバ内に配置された基板の表面に第１反応ガス混合物をパルス供給する工程と、
（ｂ）第１単原子層の第１領域を処理するために、エネルギー照射を向ける工程と、
（ｃ）第１単原子層を第１領域から除去する工程と、
（ｄ）第１単原子層の第２領域上に第２単原子層を選択的に形成するために、基板表面に第２反応ガス混合物をパルス供給する工程であって、第２単原子層は、第２領域上に化合物層を形成するために、第１単原子層と反応する工程を含む方法。 A method for forming a feature on a compound layer in a device comprising:
(A) pulsing a first reactant gas mixture to the surface of the substrate disposed in the processing chamber to form a first monoatomic layer of the compound layer on the substrate surface;
(B) directing energy irradiation to treat the first region of the first monoatomic layer;
(C) removing the first monoatomic layer from the first region;
(D) pulse supplying a second reactive gas mixture to the substrate surface to selectively form a second monoatomic layer on the second region of the first monoatomic layer , the second monoatomic layer The method comprising reacting with the first monoatomic layer to form a compound layer on the second region .
基板表面から処理された第１単原子層を除去するためにエッチング処理を行う請求項２記載の方法。3. The method of claim 2, wherein an etching process is performed to remove the processed first monoatomic layer from the substrate surface.
エネルギー照射が通過する、マスクによって保護されていない第１単原子層の第１領域にエネルギー照射を向ける工程を含む請求項１記載の方法。 The process of directing energy irradiation is
The method of claim 1, comprising directing the energy irradiation to a first region of the first monoatomic layer that is not protected by a mask through which the energy irradiation passes.
第１領域内の第１単原子層の化学的性質を変化させる請求項１記載の方法。 The process of directing energy irradiation is
The method of claim 1, wherein the chemical properties of the first monoatomic layer in the first region are varied.
原子層堆積プロセス内で実行される第１反応ガス混合物のパルス供給によって堆積される材料層の第１単原子層の第１領域を処理するために、エネルギー照射を向ける工程と、
化合物層の第１単原子層上に第２単原子層を形成するために、原子層堆積プロセスを実行し続ける工程であって、第２単原子層は、第１単原子層の第１領域には付着せず、第２単原子層は、第２領域上に化合物層を形成するために、第１単原子層と反応する工程と、
光照射によって処理された第１領域内の第１単原子層を除去する工程を含む方法。 A method for forming a feature on a compound layer in a device comprising:
Directing energy irradiation to treat a first region of a first monoatomic layer of a material layer deposited by pulsing a first reactant gas mixture performed within an atomic layer deposition process;
Continuing to perform an atomic layer deposition process to form a second monoatomic layer on the first monoatomic layer of the compound layer , wherein the second monoatomic layer is a first region of the first monoatomic layer. The second monoatomic layer reacts with the first monoatomic layer to form a compound layer on the second region; and
Removing the first monoatomic layer in the first region treated by light irradiation.
エネルギー照射によって未処理の第１単原子層の第２領域上のみに第２単原子層を選択的に形成する工程を含む請求項１２記載の方法。 The process of continuing to perform the atomic layer deposition process is:
The method according to claim 12 , further comprising the step of selectively forming the second monoatomic layer only on the second region of the untreated first monoatomic layer by energy irradiation.
第２単原子層を除去することなく基板表面から処理された第１単原子層を選択的に除去する工程を含む請求項１２記載の方法。 The step of removing the first monoatomic layer includes
13. The method of claim 12 , comprising selectively removing the treated first monoatomic layer from the substrate surface without removing the second monoatomic layer.
（ａ）基板表面上に化合物層の第１単原子層を形成するために、処理チャンバ内に配置された基板の表面に第１反応ガス混合物をパルス供給する工程と、(A) pulsing a first reactant gas mixture to the surface of the substrate disposed in the processing chamber to form a first monoatomic layer of the compound layer on the substrate surface;
（ｂ）第１単原子層の第１領域を処理するために、光照射を向ける工程と、(B) directing light irradiation to treat the first region of the first monoatomic layer;
（ｃ）第１単原子層の第１領域上に第２単原子層を選択的に形成するために、第２反応ガス混合物をパルス供給する工程であって、第２単原子層は、第１領域上に化合物層を形成するために、第１単原子層と反応する工程と、(C) pulsing the second reactive gas mixture to selectively form the second monoatomic layer on the first region of the first monoatomic layer, the second monoatomic layer comprising: Reacting with the first monoatomic layer to form a compound layer on one region;
（ｄ）光照射によって処理されなかった第１単原子層の第２領域を選択的に除去する工程を含む方法。(D) A method including a step of selectively removing the second region of the first monoatomic layer that has not been processed by light irradiation.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261601511P | 2012-02-21 | 2012-02-21 | |
| US61/601,511 | 2012-02-21 | ||
| PCT/US2013/022988 WO2013126175A1 (en) | 2012-02-21 | 2013-01-24 | Atomic layer deposition lithography |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015515641A JP2015515641A (en) | 2015-05-28 |
| JP2015515641A5 true JP2015515641A5 (en) | 2015-07-09 |
| JP5771339B2 JP5771339B2 (en) | 2015-08-26 |
Family
ID=49003242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014558744A Expired - Fee Related JP5771339B2 (en) | 2012-02-21 | 2013-01-24 | Atomic layer deposition lithography |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8932802B2 (en) |
| JP (1) | JP5771339B2 (en) |
| KR (1) | KR20140129231A (en) |
| CN (1) | CN104115257A (en) |
| TW (1) | TW201337027A (en) |
| WO (1) | WO2013126175A1 (en) |
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| TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
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| JPH0210361A (en) * | 1988-03-28 | 1990-01-16 | Texas Instr Inc <Ti> | Method of obtaining pattern line drawing with high resolutions |
| JPH0233153A (en) * | 1988-07-22 | 1990-02-02 | Toshiba Corp | Manufacture of semiconductor device |
| EP0501278B1 (en) * | 1991-02-28 | 1998-09-30 | Texas Instruments Incorporated | Method to produce masking |
| JP3128995B2 (en) * | 1992-09-30 | 2001-01-29 | ソニー株式会社 | Method of forming selective epitaxial growth mask |
| JPH06208965A (en) * | 1993-01-08 | 1994-07-26 | Hitachi Ltd | Manufacture of semiconductor device |
| EP0809282A1 (en) * | 1996-04-26 | 1997-11-26 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | A method for treating a substrate surface, a method for producing an at least partially metallized substrate and a substrate having a treated surface |
| JP3289606B2 (en) * | 1996-07-11 | 2002-06-10 | 凸版印刷株式会社 | Blank for halftone type phase shift mask and halftone type phase shift mask |
| US7601652B2 (en) | 2005-06-21 | 2009-10-13 | Applied Materials, Inc. | Method for treating substrates and films with photoexcitation |
| US7531293B2 (en) * | 2006-06-02 | 2009-05-12 | International Business Machines Corporation | Radiation sensitive self-assembled monolayers and uses thereof |
| US8252697B2 (en) * | 2007-05-14 | 2012-08-28 | Micron Technology, Inc. | Zinc-tin oxide thin-film transistors |
| KR101049801B1 (en) * | 2009-03-05 | 2011-07-15 | 삼성모바일디스플레이주식회사 | Method for manufacturing polycrystalline silicon layer and atomic layer deposition apparatus used therein |
| US8318249B2 (en) * | 2009-11-20 | 2012-11-27 | Eastman Kodak Company | Method for selective deposition and devices |
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2013
- 2013-01-24 JP JP2014558744A patent/JP5771339B2/en not_active Expired - Fee Related
- 2013-01-24 WO PCT/US2013/022988 patent/WO2013126175A1/en active Application Filing
- 2013-01-24 KR KR1020147026300A patent/KR20140129231A/en not_active Application Discontinuation
- 2013-01-24 CN CN201380009300.XA patent/CN104115257A/en active Pending
- 2013-02-08 TW TW102105286A patent/TW201337027A/en unknown
- 2013-02-08 US US13/762,446 patent/US8932802B2/en not_active Expired - Fee Related
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