JPH0233153A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To shorten the manufacturing process of a semiconductor, to enhance processing precision, and to avoid damage of a substrate by forming a selectively reactive region on a substrate and repeating operations of alternately bringing 2 kinds of raw materials into contact with them. CONSTITUTION:A thin film is formed on the whole surface of the substrate 11, and the region 13, e.g., capable of producing a desired functional group is formed by irradiating the thin film with electromagnetic waves 12 through a photomask, then, the thin film is brought into contact with the raw material AXl (l>=2) to condense it with the functional group and to fix it, and then brought into contact with the raw material BYm (m>=2) to condense it with the functional group X, and in succession alternately brought into contact with one of AXl and BYm alone to selectively form an organic polymer (a) or an inorganic compound (b), where the polymer (a) is formed, preferably by growing polyester, polyamide, or polyimide through reactions I, II, and III, and the compound (b) is, preferably, formed by growing the oxide or nitride of an element of group II-VI.

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to a method for forming a thin film used in the manufacturing process of semiconductor integrated circuit devices, etc., and particularly relates to a method for forming a thin film locally and selectively according to a desired pattern. The present invention relates to a method of depositing a compound thin film.

(Prior Art) The microfabrication process used in the manufacture of semiconductor integrated circuit devices is usually performed by the method shown in FIGS. 8(a) to 8(e). First, a thin film 2 to be microfabricated is deposited uniformly over the entire surface of the semiconductor substrate 1, and a photoresist 3 is applied over the entire surface of the thin film 2 (as shown in FIG. 8(a)). next,
The photoresist 3 is irradiated with light 4 that has passed through a predetermined photomask (not shown) (as shown in FIG. 3B). Continuing,
The photoresist 3 in the exposed area is selectively removed by a developing process (as shown in FIG. 1C). Furthermore, using the remaining photoresist 3 as a mask, the exposed portions of the thin film 2 are etched away using reactive ion etching or the like (as shown in FIG. 3(d)).

Although the above-described method is widely used in the manufacturing process of semiconductor devices, it has many problems as described below.

First, there is a problem that the process is long. That is, although the photoresist is used only as a mask and is removed after etching, it takes a long time for development. Therefore, if a thin film can be selectively formed without using photoresist, the process can be significantly shortened.

Second, it is difficult to improve exposure accuracy any further than currently. That is, when using a photoresist as a mask for reactive ion etching, the photoresist needs to have a film thickness of a certain level or more in order to obtain resistance as a mask. However, since the depth of focus during exposure is shallow, the thicker the resist film, the lower the exposure accuracy. The pattern accuracy during this exposure is determined by the wavelength of the light used for exposure and the numerical aperture of the lens, but if you try to improve accuracy by shortening the wavelength or increasing the numerical aperture, the depth of focus will inevitably become further. It becomes shallow. Therefore, unless the film thickness of the photoresist is reduced, a significant improvement in exposure accuracy cannot be expected.

Third, there is the problem of damage to the substrate due to reactive ion etching. That is, in reactive ion etching, charged particles are accelerated by an electric field and collide with the substrate, which may cause damage such as electrostatic breakdown or crystal disorder.

(Problems to be Solved by the Invention) The present invention has been made to solve the above-mentioned problems, and it shortens the manufacturing process of semiconductor integrated circuits, improves processing accuracy, and prevents damage to the substrate. The aim is to achieve higher integration and reliability of devices.

[Structure of the Invention] (Means for Solving the Problems) A method for manufacturing a semiconductor device of the present invention selectively injects Axj (j)≧2) and BY, (
m≧2) An organic polymer compound ÷AB+ which is a condensation product of raw materials represented by m≧2). or an inorganic compound (AB). In growing AX, (II≧2) and BY, (m≧2), a predetermined region of the surface of the semiconductor substrate is selectively treated.
A step of forming a region that selectively reacts with one of the raw materials represented by
≧2) and BYm (m≧2), the operation of bringing the raw material gases or vapors represented by m≧2 into contact with each other individually and alternately is repeated multiple times to form an organic polymer compound +AB+. or an inorganic compound (AB).

Hereinafter, the principle of the method of the present invention will be explained in more detail with reference to FIGS. 1(a) to (e).

In the present invention, first, a predetermined region on the surface of the semiconductor substrate 11 is selectively processed to improve AXI (ff≧2) and BY+
A region that selectively reacts with either one of the raw materials represented by ++ (m≧2) is formed (as shown in FIG. 1(a)). In this step, a thin film is usually formed on the entire surface of the semiconductor substrate 11 in advance, and electromagnetic waves (visible light, electron beams, X-rays, etc.)
2, and a method of exposing through a photomask using a normal exposure device can be applied.

The thin film used is one that generates a functional group that selectively reacts with one of the two raw materials when irradiated with electromagnetic waves. In this case, functional groups exist in the region irradiated with electromagnetic waves, and reaction products grow in that region due to subsequent reactions. Furthermore, the thin film may have a functional group that selectively reacts with one of the two types of raw materials, and can be selectively welded and removed by irradiation with electromagnetic waves. In this case, functional groups exist in areas that were not irradiated with electromagnetic waves,
Subsequent reactions cause reaction products to grow in that area. Therefore, in the method of the present invention, it is possible to form a thin film corresponding to the case where a conventional positive resist or negative resist is used.

FIG. 1(a) shows the former of the two reaction forms described above, that is, a thin film is used that generates a functional group that selectively reacts with one of the two raw materials by irradiation with electromagnetic waves 12, and is exposed to light. This is an example of a case where the region is a region 13 having a functional group.

Next, the gas or vapor of one of the raw materials AX is brought into contact with the semiconductor substrate 11 that has undergone the above-described treatment. As a result, a condensation reaction occurs between the functional groups on the surface of the semiconductor substrate 11 and the raw material AX, and the raw material AX is fixed to the surface of the semiconductor substrate 11. As a result, the surface is in a state rich in functional groups X (as shown in FIG. 3(b)).

Subsequently, the semiconductor substrate 11 is brought into contact with the gas or vapor of the other raw material BY-. As a result, the functional group X on the surface of the semiconductor substrate 11 and the raw material BY undergo a condensation reaction, and the raw material BY is fixed to the surface of the semiconductor substrate 11.

As a result, the surface is rich in functional groups Y (
(Illustrated in figure (e)). Furthermore, raw material AX,
The organic polymer compound +AB± or the inorganic compound (AB) is selectively grown by bringing the gases or vapors of BY and BY into contact with each other individually and alternately ((d) and (e)
).

In addition, organic polymer compound +AB+. When growing polyester, polyamide or polyimide, Axs
The raw materials represented by C1≧2) and sy-(m≧2) include an organic compound having a plurality of carboxyl groups (e.g. terephthalic acid) and an organic compound having a plurality of hydroxyl groups or amino groups (e.g. ethylene glycol). used.

In addition, when growing inorganic compounds (AB), oxides or nitrides of elements in groups 2 to 6, AX* (
As raw materials represented by N≧2) and BYs (m≧2), halides of elements of Groups 2 to 6 (for example, 5
iCII4) and H2O or NH.

(Function) According to the method of the present invention, an organic polymer compound +AB+ or an inorganic compound (AB),
can be selectively grown, and can be used as is as an etching mask or a material for forming semiconductor elements. Therefore, the process can be significantly shortened compared to the conventional method. Also, an organic polymer compound +AB+ selectively grown on the surface of a semiconductor substrate. or inorganic compounds (AB
), even when used as an etching mask for reactive ion etching, the film is thin and has sufficient resistance as a mask, so it is advantageous for processing fine patterns. Furthermore, when an inorganic compound (AB) is selectively grown on the surface of a semiconductor substrate and used as a constituent material for a semiconductor element, it is not necessary to use reactive ion etching as in the past, so damage to the substrate can be significantly reduced. can be reduced to

(Example) Embodiments of the present invention will be described below with reference to the drawings.

In the following examples, a reaction apparatus shown in FIG. 7 was used as a thin film forming apparatus.

First, the reaction apparatus shown in FIG. 7 will be explained. In FIG. 7, first and second pipes 72 and 73 for introducing two types of raw material gases or raw material vapors are connected to a reaction vessel 71. In addition, the reaction vessel 71 is connected to a turbo molecular pump (not shown) through the exhaust lower 4.
It can exhaust up to 'Torr. A susceptor 7B is installed inside the reaction vessel 71 via a ceramic plate 75 for heat insulation. A tube 17 for temperature adjustment is embedded inside the ceramic plate 75 and the susceptor 7B. A semiconductor substrate 78, which is an object to be processed, is placed on this susceptor 76. During the reaction, the interior of the reaction vessel 71 is heated by a heater (not shown), and by circulating water or oil at a constant temperature within the tube 77, the temperature of the semiconductor substrate 78 can be controlled.

Using this reaction apparatus, by setting the inside of the reaction vessel 71 to a predetermined pressure, setting the semiconductor substrate 78 to a predetermined temperature, and switching the valves of the first and second piping 72, 73,
The process of bringing the two types of raw material gases or raw material vapors represented by the semiconductor substrates 71EAX and BY into contact with each other individually and alternately is repeated.

Example 1 An example in which the method of the present invention is applied to selectively form a polyester film that can be used as an etching mask on a silicon substrate is shown in FIGS. 2(a) to 2(f).
Explain with reference to.

First, methylnaphthoquinone (as shown in the figure) is coated on the surface of a silicon substrate 21 to a thickness of 100 mm as a photosensitizer by spin coating. Next, using a reduction exposure device, near ultraviolet light 23 with a wavelength of 43611 was applied at 500 mJ/cm through a photomask.
Exposure was performed by irradiating with a dose of 2 ((b) r
I! After that, this silicon substrate 21 was once taken out into the atmosphere. It is known that naphthoquinone diazide changes into indene carboxylic acid as shown in the following formula by exposure to light and reaction with moisture in the atmosphere. Therefore, a carboxyl group is included in the exposed region 22° (as shown in FIG. 2C).

Next, the silicon substrate 21 was carried into the reaction apparatus shown in FIG. 7, and ethylene glycol vapor and terephthalic acid vapor were alternately introduced into the reaction vessel 71 while maintaining the substrate temperature at 100°C. The pressure at the time of introduction of each steam was 0.1 Torr, and the exposure time for each steam was 0.1 seconds. Furthermore, when switching the steam, the exhaust was pumped down to 1 G-'Torr using a turbo molecular pump. This process was repeated 1000 times.

In these steps, as shown in Figure 2 (C), when ethylene glycol is applied, the carboxyl group of indene carboxylic acid and one of the two hydroxyl groups of ethylene glycol cause an esterification reaction, resulting in ethylene glycol. Glycol is fixed to the surface. As a result, the other hydroxyl group of ethylene glycol appears on the surface (Fig.
).

Next, as shown in Figure (d), when the supply of ethylene glycol is cut off and terephthalic acid is allowed to act, one of the two carboxyl groups of terephthalic acid and the hydroxyl group causes an esterification reaction, Terephthalic acid is fixed to the surface. As a result, the other carboxyl group of terephthalic acid appears on the surface (as shown in FIG. 2(e)). Furthermore, the same figure (
As shown in e), when the supply of terephthalic acid is cut off and ethylene glycol is allowed to act, an esterification reaction occurs between the carboxyl group and one of the two hydroxyl groups of ethylene glycol, causing ethylene glycol to stick to the surface. be done. By repeating the above steps, the silicon substrate 21
A polyester thin film 24 is selectively formed on the surface (as shown in FIG. 4(f)).

The thickness of this polyester thin film 24 was 5,000. Further, when this film was analyzed by infrared absorption spectroscopy, it was confirmed that it was a condensation polymer of terephthalic acid and ethylene glycol, that is, polyester. Note that since the polyester film 24 grows not only in the vertical direction but also in the horizontal direction, the width of the obtained pattern is 0.6 mm larger than the size at the time of exposure.
5- It was getting thicker. The polyester thin film 24 has relatively high resistance to RIE, and even when the thickness is 0.5 J, the resistance to RIE is relatively high. No. 1! It was also revealed that the mask functions well as a mask for processing thin films.

Example 2 An example in which the method of the present invention is applied to forming an etching mask with high precision on a silicon substrate having steps will be described with reference to FIGS.

First, on the surface of the silicon substrate 31 having a step of 1p,
After forming a polystyrene film 32 with a thickness of 2 mm by a spin coating method and flattening the surface, eicosanoic acid (
A CHl(CH2) l5cOOH) monomolecular film 33 was formed. At this time, the eicosanoic acid was oriented so that its carboxyl group was on the upper surface (as shown in FIG. 3(a)). Next, a KrF excimer laser beam 34 with a wavelength of 249 ns is applied through a photomask to increase the laser output IW at the irradiated surface.
/ am"see for 3 seconds. As a result, the eicosanoic acid monomolecular film 33 in the exposed area was welded and completely removed (as shown in FIG. 2(b)).

Next, the silicon substrate 81 was carried into the reaction apparatus shown in FIG. 7, and while the substrate temperature was maintained at 150°C,
C12 gas and H20 vapor were alternately introduced into the reaction vessel 71. The pressure at the time of introduction of each gas or steam is I
Torr and the exposure time to gas or vapor is 0.2
Seconds. Also, S i CJ? When switching between 4 gas and H20 steam, the turbo molecular pump provides 10"'T.
It was evacuated to orr to ensure that the gas or steam used last time did not remain. This process was repeated 50 times.

In these steps, when S I CN 4 is first applied, the carboxyl group of eicosanoic acid remaining in the unexposed region reacts with S L Cf 4 according to the following formula, and S is fixed.

l -C0OH+S i Cjl a →-C-0-8
i CD s +HCjl Next, when the supply of S L Cfla is cut off and H2O is allowed to act, a substitution reaction between chlorine and hydroxyl group occurs according to the following formula.

-8i Cfl s +3H20→-8i (OH)
3 +3HCfI Furthermore, the supply of H2O is cut off and S i
C4! When a is applied, S on the surface according to the following equation
L CI) 4 is fixed.

18i (OH))+3SICj! 4-8i (O8i
CNs)s +3HCfl Thus S i Cf 2
By repeating the introduction of and H2O, the bond grows sequentially, and Si
Macromolecules of O2 tissue are formed.

The SiO2 film 34 thus formed exhibits strong resistance to reactive ion etching (hereinafter abbreviated as 02RIE) using oxygen gas. And this SiO□
Using the film 34 as a mask, the underlying polystyrene film 32 is coated with a
It can be processed by RIE (as shown in FIG. 3(d)).

Conventionally, a multilayer resist method has been used for microfabrication of surfaces with such steps, but the method of this embodiment can significantly shorten the process. Furthermore, since the developing step using a solution is omitted, it is suitable for processing finer patterns.

Note that, as in the case of Example 1, 5io which is selectively formed
The width of the pattern changes because the 2 film also grows laterally to the surface, but this effect can be reduced to a negligible level by making the SlO film sufficiently thin. .

In Example 1.2 above, a method of forming an etching mask for RIE on a substrate has been described, but it is also possible to directly deposit constituent materials of an integrated circuit element by selective growth. Hereinafter, such an embodiment will be described.

Example 3 Figures 4(a) to (4) show an example in which the method of the present invention is applied to selectively grow Sin on a silicon substrate.
This will be explained with reference to C).

First, the silicon substrate 41 is coated with tetraethoxysilane (81
(OCH2CH3) a) Immersed in the ethanol solution of a). As a result, tetraethoxysilane is hydrolyzed by the trace amount of water contained in the ethanol, and a silicon hydroxide thin film 42 is formed on the silicon substrate 41.

The thickness of this silicon hydroxide thin film 42 is approximately 50 mm (as shown in FIG. 4(a)). Next, ArF excimer laser light 43 with a wavelength of 193 nm is applied to the irradiated surface through a photomask using a reduction exposure device, with a laser output of 2 W /
Exposure was performed for 3 seconds at cm2sec. As a result, the silicon hydroxide thin film 42 in the exposed area was repelled and completely removed (as shown in FIG. 2(b)).

Next, the silicon substrate 41 is carried into the reaction apparatus shown in FIG. 7, and while maintaining the substrate temperature at 200°C, S
i Cjl , gas and I20 vapor are alternately added to the reaction vessel 7.
It was introduced within 1. The pressure at the time of introduction of each gas or vapor was I Torr, and the exposure time to the gas or vapor was 0.2 seconds. In addition, when switching between 5iCjp4 gas and H, O vapor, a turbo molecular pump is used to
It was evacuated to Torr to ensure that no gas or steam from the previous use remained. This process was repeated 1000 times.

The reaction mechanism in these steps is the same as in Example 2. That is, when S i Cfla is first applied, the hydroxyl groups of silicon hydroxide remaining in the unexposed region react with S i CfI4, and S i C94 is fixed to the surface thereof. Next, S L Cf
When the supply of 1 is cut off and I20 is allowed to act, a substitution reaction between chlorine and hydroxyl group occurs. Furthermore, when the supply of I20 is cut off and S i Cjl is applied, S i
CN 4 is fixed. By repeating the introduction of S i C9 and HzO in this manner, Sin and macromolecules of the structure are formed in the unexposed region.

When the 5i02 film 44 thus formed was measured by infrared absorption spectroscopy, it was found that trace amounts of OH groups and Si--Cg bonds were present. Therefore, in an oxygen atmosphere, eoo℃
When annealed, these were removed and the film became suitable for use as an interlayer insulating film for semiconductor integrated circuit devices.

The structure shown in FIG. 4(e) can be directly applied to the manufacture of a semiconductor integrated circuit device in which the contact hole is formed in a region where the Si film is not grown.

Conventionally, such contact holes have been processed by RIE, but because the etching selectivity is not sufficient, the underlying silicon substrate is etched and damaged, resulting in an increase in contact resistance. On the other hand, since the method of this embodiment does not use RIE, such a problem does not occur at all.

Example 4 The method of the present invention
An embodiment applied to the manufacture of a drain type MOS) transistor will be described with reference to FIGS. 5(a) to 5(e).

First, a gate electrode 53 made of polycrystalline silicon is formed on the surface of a silicon substrate 51 via a gate oxide film 52, and using this gate electrode 58 as a mask, arsenic is ion-implanted at a low dose to form an n-type impurity layer 54. 54 (as shown in FIG. 5(a)). Next, in the same manner as in Example 3 above, this silicon substrate 51 was immersed in an ethanol solution of tetraethoxysilane to form a silicon hydroxide thin film 55 with a thickness of approximately 50 mm on the silicon substrate 51 (see FIG. b).

Next, the entire surface of the silicon substrate 51 was uniformly exposed to nearly parallel ArF excimer laser light 5B having a wavelength of 193 ns for 3 seconds at a laser output of 2 W/cm2 sec on the irradiated surface. As a result, the silicon hydroxide thin film 55 in the exposed area was repelled and completely removed, leaving a silicon hydroxide thin film 55° on the side wall of the gate electrode 53, which was in the shadow of the laser beam (see Fig. (C) As shown).

Next, the silicon substrate 51 is carried into a reaction apparatus 71 shown in FIG. 7, and as in Example 3, S i CN
A gas and I20 vapor were alternately introduced into the reaction vessel 71. As a result, after repeating the gas introduction 200 times, the SiO
It was formed into a membrane shape 7 (as shown in the same figure (d)). Next, using the gate electrode 53 and the SiO2 film 57 on its sidewall as a mask, arsenic is ion-implanted at a high dose to form an n+ type impurity layer 58.5.
8 was formed. The n-type impurity layers 54, 54 and n"
The source and drain regions are formed by the type impurity layers 58 and 58 (as shown in FIG. 3(e)).

Example 5 FIG. 6(a) shows an example in which the method of the present invention is applied to the formation of titanium nitride (T i N) used as a barrier layer to suppress the reaction between Si and wiring metal in a contact hole. This will be explained with reference to (d).

First, a StO film B2 was formed on the surface of the silicon substrate 61, and a contact hole 83 was opened in a predetermined region thereof (as shown in FIG. 6(a)). Next, in the same manner as in Example 3 above, this silicon substrate Bl was immersed in an ethanol solution of tetraethoxysilane to form a silicon hydroxide thin film B4 with a thickness of about 10 mm on the silicon substrate Bl (see FIG. b) Illustrated)
. Next, the entire surface of the silicon substrate 81 was irradiated with CO2 laser light B5 almost uniformly.

At this time, a mirror was used and the silicon substrate 61 was rotated so that the diverging laser light was irradiated obliquely onto the surface of the silicon substrate B1. As a result, the silicon hydroxide thin film B4 in the exposed area is completely removed by welding.
A silicon hydroxide thin film of 64° remained at the bottom of contact hole B3, which was not irradiated with laser light (see the same figure).
C) As shown).

Next, the silicon substrate 61 is carried into the reaction apparatus shown in FIG. 7, and titanium trichloride T i Cfl s gas and ammonia NH gas are alternately introduced into the reaction vessel 71 while maintaining the substrate temperature at 200°C. It was introduced in

The pressure at the time of introducing each gas was 0.1 Torr, and the exposure time to the gas was 0.5 seconds. Also, Ti
When switching between Cj13 gas and NH gas, the gas was evacuated to 10-'Torr using a turbo molecular pump to prevent the previously used gas or steam from remaining.

This process was repeated 80 times.

In these steps, when TLCIIs is first applied, the hydroxyl groups of the silicon hydroxide thin film 64° remaining at the bottom of the contact hole 63 react with TiClI3 according to the following formula, and TLCIIs is fixed on the surface thereof.

-8i OH+TiCjh -8i-0-TiCjh
Next, when the supply of TiCl3 is cut off and NH is allowed to act, a substitution reaction between chlorine and an amino group occurs according to the following formula.

18i-0-TICNz+2NH) -5t-o'
rt (NHz)2+2Hcj! Furthermore, when the supply of NH, is cut off and TLCN3 is applied, T i Cj! on the surface according to the following equation. s is fixed.

-TI(NHz)2+4Ticj! s −TI(N(
TiC#t)z)z+4Hc# By repeating the introduction of Tlcls and NH in this way, Ti-N-Tl bonds grow sequentially to form a macromolecule.

As a result, a TiN film 66 with a thickness of 600 mm was formed at the bottom of the contact hole 63. This TiN film 6B is conductive and chemically stable, and has the effect of suppressing the reaction between the silicon substrate 81 and wiring materials such as aluminum and tungsten, thereby improving the reliability of the connection part. .

In addition, in the above examples, polyester, SiO2, Ti
Although the case where N is selectively grown has been described, the method of the present invention is not limited to these examples, but can be applied generally to two types of materials that grow into polymers or macromolecules by causing a condensation reaction with each other. It can be applied to More specifically, in the case of organic polymer compounds, it can be applied to polyamides and polyimides in addition to polyesters. In the case of inorganic compounds, by using halides of elements belonging to Groups 2 to 6 and H2O or NH, oxides and nitrides of these elements can be selectively formed.

Furthermore, in the above embodiments, light irradiation was used to form a region that selectively reacts with one of the raw materials on the semiconductor substrate, but the invention is not limited to this, and ion beams, electron beams, etc. may be used. Good too. It is also possible to directly utilize differences in reactivity due to differences in underlying materials.

Furthermore, although the above embodiments have described a method in which gases are introduced alternately into a single container, a structure may also be adopted in which the semiconductor substrate sequentially moves back and forth through a plurality of containers filled with different gases in advance.

[Effects of the Invention] As detailed above, according to the present invention, it is possible to selectively grow an organic polymer or macromolecule film directly on a semiconductor substrate. Therefore, if the method of the present invention is utilized for forming an etching mask, effects such as shortening of process steps and improvement of pattern accuracy can be obtained. Furthermore, if the constituent materials of an integrated circuit element are directly formed by the method of the present invention, the process can be significantly shortened, and the reliability of the element can be improved by avoiding damage caused by microfabrication.

[Brief explanation of the drawing]

Figures 1 (a) to (e) are explanatory diagrams showing the principle of the method of the present invention, and Figures 2 (a) to (f) are selectively forming a polyester film on a silicon substrate in Example 1 of the present invention. 3(a) to 3(d) are sectional views showing a method of selectively forming a StO film on a silicon substrate in Example 2 of the present invention, and FIG. 4(a) ~(C) is a cross-sectional view showing a method of selectively forming a 5LO2 film on a silicon substrate in Example 3 of the present invention, and FIGS. 5(a) to (e)
6(a) to 6(d) are cross-sectional views showing a method for manufacturing an LDD structure MOS transistor in Example 4 of the present invention.
is a cross-sectional view showing a method of selectively forming a TiN film at the bottom of a contact hole in Example 5 of the present invention, FIG. 7 is a cross-sectional view of a reaction apparatus used in Example of the present invention,
FIGS. 8(a) to 8(d) are cross-sectional views showing a conventional method of manufacturing a semiconductor device. 11... Semiconductor substrate, 12... Electromagnetic wave, 13...
Region having a functional group, 21... silicon substrate, 22.
... Methylnaphthoquinonediazide film, 23... Near ultraviolet rays, 24... Polyester film, 31... Silicon substrate, 32... Polystyrene film, 33... Eicosanoic acid monomolecular film, 34... KrF Excimer laser light, 35
...5102 film, 41... silicon substrate, 42...
- Silicon hydroxide thin film, 43... ArF excimer laser light, 44... 5LO2 film, 51... silicon substrate, 52... gate oxide film, 53... gate electrode, 54... n-type impurity layer, 55... silicon hydroxide thin film, 5B... ArFz xima laser beam, 57
・S i O2 film, 58...n+ type impurity layer, B1・
...Silicon substrate, 62...5i02 film, 83...
Contact hole, 64... silicon hydroxide thin film,
65...CO2 laser light, 8B...TiN film. Applicant's agent Patent attorney Takehiko Suzue ↓ j h2 Figure 1 Figure 2 Porridge diagram Figure Figure Figure

Claims (3)

[Claims] (1) Selectively apply AX_l to a predetermined region on the surface of the semiconductor substrate.
(l≧2) and BY_m (m≧2) When growing an organic polymer compound that is a condensation product of raw materials ▲There are mathematical formulas, chemical formulas, tables, etc.▼ or an inorganic compound (AB)_n, the above-mentioned semiconductor By selectively treating a predetermined region of the substrate surface, AX_l (l≧2) and BY_m (m≧2)
A step of forming a region that selectively reacts with one of the raw materials represented by AX_l (l≧2
) and BY_m (m≧2) by repeating the operation of contacting each raw material gas or vapor individually and alternately multiple times to form an organic polymer compound ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ or an inorganic compound ( A method for manufacturing a semiconductor device, comprising the step of selectively growing AB)_n. (2) Using an organic compound having a plurality of carboxyl groups and an organic compound having a plurality of hydroxyl groups or amino groups as raw materials represented by AX_l (l≧2) and BY_m (m≧2), the following (1) is carried out. ~According to formula (3), ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(1) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(2) ▲There are mathematical formulas, chemical formulas, tables, etc.▼・(3) The method for manufacturing a semiconductor device according to claim (1), characterized in that polyester, polyamide, or polyimide is grown as the organic polymer compound ▲which has a mathematical formula, chemical formula, table, etc.▼. (3) As the raw materials represented by AX_l (l≧2) and BY_m (m≧2), a halide of an element from Group 2 to Group 6 and H_2O or NH_3 are used, and an inorganic compound (
2. The method for manufacturing a semiconductor device according to claim 1, wherein an oxide or nitride of an element from Group 2 to Group 6 is grown as AB)_n.