JP2015501552A5 - - Google Patents

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Publication number
JP2015501552A5
JP2015501552A5 JP2014540338A JP2014540338A JP2015501552A5 JP 2015501552 A5 JP2015501552 A5 JP 2015501552A5 JP 2014540338 A JP2014540338 A JP 2014540338A JP 2014540338 A JP2014540338 A JP 2014540338A JP 2015501552 A5 JP2015501552 A5 JP 2015501552A5
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JP
Japan
Prior art keywords
deflection element
beam deflection
irradiance
location
distribution along
Prior art date
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JP2014540338A
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English (en)
Japanese (ja)
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JP2015501552A (ja
JP5864771B2 (ja
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Priority claimed from PCT/EP2012/004212 external-priority patent/WO2014056513A1/en
Publication of JP2015501552A publication Critical patent/JP2015501552A/ja
Publication of JP2015501552A5 publication Critical patent/JP2015501552A5/ja
Application granted granted Critical
Publication of JP5864771B2 publication Critical patent/JP5864771B2/ja
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JP2014540338A 2012-10-08 2012-10-08 マイクロリソグラフィ投影露光装置の照明系 Active JP5864771B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/004212 WO2014056513A1 (en) 2012-10-08 2012-10-08 Illumination system of a microlithographic projection exposure apparatus

Publications (3)

Publication Number Publication Date
JP2015501552A JP2015501552A (ja) 2015-01-15
JP2015501552A5 true JP2015501552A5 (enExample) 2015-08-13
JP5864771B2 JP5864771B2 (ja) 2016-02-17

Family

ID=47178539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014540338A Active JP5864771B2 (ja) 2012-10-08 2012-10-08 マイクロリソグラフィ投影露光装置の照明系

Country Status (5)

Country Link
US (1) US9261695B2 (enExample)
JP (1) JP5864771B2 (enExample)
KR (1) KR101591155B1 (enExample)
TW (1) TWI536122B (enExample)
WO (1) WO2014056513A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106502055B (zh) * 2015-09-06 2019-04-19 中芯国际集成电路制造(上海)有限公司 光刻失焦的检测方法
CN116414010B (zh) * 2023-04-06 2024-04-26 上海镭望光学科技有限公司 一种自由光瞳产生装置及其产生自由光瞳照明的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4401060B2 (ja) * 2001-06-01 2010-01-20 エーエスエムエル ネザーランズ ビー.ブイ. リトグラフ装置、およびデバイス製造方法
KR100480620B1 (ko) * 2002-09-19 2005-03-31 삼성전자주식회사 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법
JP4717813B2 (ja) * 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
US20060087634A1 (en) * 2004-10-25 2006-04-27 Brown Jay M Dynamic illumination uniformity and shape control for lithography
US8937706B2 (en) * 2007-03-30 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and method
KR20180072841A (ko) 2007-11-06 2018-06-29 가부시키가이샤 니콘 조명 광학계, 노광 장치 및 노광 방법
DE102008054582A1 (de) 2007-12-21 2009-07-09 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
CN105606344B (zh) * 2008-05-28 2019-07-30 株式会社尼康 照明光学系统、照明方法、曝光装置以及曝光方法
EP2202580B1 (en) * 2008-12-23 2011-06-22 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
NL2004429A (en) * 2009-08-25 2011-02-28 Asml Netherlands Bv Illumination system, lithographic apparatus and method of adjusting an illumination mode.
US8335999B2 (en) * 2010-06-11 2012-12-18 Orbotech Ltd. System and method for optical shearing
DE102010030089A1 (de) * 2010-06-15 2011-12-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikro-Lithografie sowie Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
WO2012034571A1 (en) * 2010-09-14 2012-03-22 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
JP2012099686A (ja) * 2010-11-04 2012-05-24 Nikon Corp 光源形成方法、露光方法、及びデバイス製造方法
JP6016169B2 (ja) * 2011-01-29 2016-10-26 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系
JP6120001B2 (ja) * 2011-10-24 2017-04-26 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法

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