JP5864771B2 - マイクロリソグラフィ投影露光装置の照明系 - Google Patents
マイクロリソグラフィ投影露光装置の照明系 Download PDFInfo
- Publication number
- JP5864771B2 JP5864771B2 JP2014540338A JP2014540338A JP5864771B2 JP 5864771 B2 JP5864771 B2 JP 5864771B2 JP 2014540338 A JP2014540338 A JP 2014540338A JP 2014540338 A JP2014540338 A JP 2014540338A JP 5864771 B2 JP5864771 B2 JP 5864771B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- irradiance
- array
- pupil plane
- illumination system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005286 illumination Methods 0.000 title claims description 62
- 238000009826 distribution Methods 0.000 claims description 105
- 210000001747 pupil Anatomy 0.000 claims description 60
- 230000003287 optical effect Effects 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 19
- 230000003247 decreasing effect Effects 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 3
- 230000004069 differentiation Effects 0.000 claims 4
- 238000006073 displacement reaction Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 230000007774 longterm Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2012/004212 WO2014056513A1 (en) | 2012-10-08 | 2012-10-08 | Illumination system of a microlithographic projection exposure apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015501552A JP2015501552A (ja) | 2015-01-15 |
| JP2015501552A5 JP2015501552A5 (enExample) | 2015-08-13 |
| JP5864771B2 true JP5864771B2 (ja) | 2016-02-17 |
Family
ID=47178539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014540338A Active JP5864771B2 (ja) | 2012-10-08 | 2012-10-08 | マイクロリソグラフィ投影露光装置の照明系 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9261695B2 (enExample) |
| JP (1) | JP5864771B2 (enExample) |
| KR (1) | KR101591155B1 (enExample) |
| TW (1) | TWI536122B (enExample) |
| WO (1) | WO2014056513A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106502055B (zh) * | 2015-09-06 | 2019-04-19 | 中芯国际集成电路制造(上海)有限公司 | 光刻失焦的检测方法 |
| CN116414010B (zh) * | 2023-04-06 | 2024-04-26 | 上海镭望光学科技有限公司 | 一种自由光瞳产生装置及其产生自由光瞳照明的方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4401060B2 (ja) * | 2001-06-01 | 2010-01-20 | エーエスエムエル ネザーランズ ビー.ブイ. | リトグラフ装置、およびデバイス製造方法 |
| KR100480620B1 (ko) * | 2002-09-19 | 2005-03-31 | 삼성전자주식회사 | 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법 |
| JP4717813B2 (ja) * | 2003-09-12 | 2011-07-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光設備のための照明系 |
| US20060087634A1 (en) * | 2004-10-25 | 2006-04-27 | Brown Jay M | Dynamic illumination uniformity and shape control for lithography |
| US8937706B2 (en) * | 2007-03-30 | 2015-01-20 | Asml Netherlands B.V. | Lithographic apparatus and method |
| KR20180072841A (ko) | 2007-11-06 | 2018-06-29 | 가부시키가이샤 니콘 | 조명 광학계, 노광 장치 및 노광 방법 |
| DE102008054582A1 (de) | 2007-12-21 | 2009-07-09 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
| CN105606344B (zh) * | 2008-05-28 | 2019-07-30 | 株式会社尼康 | 照明光学系统、照明方法、曝光装置以及曝光方法 |
| EP2202580B1 (en) * | 2008-12-23 | 2011-06-22 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
| NL2004429A (en) * | 2009-08-25 | 2011-02-28 | Asml Netherlands Bv | Illumination system, lithographic apparatus and method of adjusting an illumination mode. |
| US8335999B2 (en) * | 2010-06-11 | 2012-12-18 | Orbotech Ltd. | System and method for optical shearing |
| DE102010030089A1 (de) * | 2010-06-15 | 2011-12-15 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikro-Lithografie sowie Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
| WO2012034571A1 (en) * | 2010-09-14 | 2012-03-22 | Carl Zeiss Smt Gmbh | Illumination system of a microlithographic projection exposure apparatus |
| JP2012099686A (ja) * | 2010-11-04 | 2012-05-24 | Nikon Corp | 光源形成方法、露光方法、及びデバイス製造方法 |
| JP6016169B2 (ja) * | 2011-01-29 | 2016-10-26 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の照明系 |
| JP6120001B2 (ja) * | 2011-10-24 | 2017-04-26 | 株式会社ニコン | 照明光学系、露光装置、およびデバイス製造方法 |
-
2012
- 2012-10-08 JP JP2014540338A patent/JP5864771B2/ja active Active
- 2012-10-08 KR KR1020137026834A patent/KR101591155B1/ko active Active
- 2012-10-08 WO PCT/EP2012/004212 patent/WO2014056513A1/en not_active Ceased
-
2013
- 2013-09-12 US US14/025,216 patent/US9261695B2/en active Active
- 2013-10-04 TW TW102135976A patent/TWI536122B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201423282A (zh) | 2014-06-16 |
| JP2015501552A (ja) | 2015-01-15 |
| TWI536122B (zh) | 2016-06-01 |
| WO2014056513A1 (en) | 2014-04-17 |
| KR20140080457A (ko) | 2014-06-30 |
| KR101591155B1 (ko) | 2016-02-02 |
| US9261695B2 (en) | 2016-02-16 |
| US20150070671A1 (en) | 2015-03-12 |
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