JP2015211139A5 - - Google Patents

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Publication number
JP2015211139A5
JP2015211139A5 JP2014092095A JP2014092095A JP2015211139A5 JP 2015211139 A5 JP2015211139 A5 JP 2015211139A5 JP 2014092095 A JP2014092095 A JP 2014092095A JP 2014092095 A JP2014092095 A JP 2014092095A JP 2015211139 A5 JP2015211139 A5 JP 2015211139A5
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JP
Japan
Prior art keywords
frequency power
wafer
amount
dry etching
heat input
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JP2014092095A
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English (en)
Japanese (ja)
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JP6200849B2 (ja
JP2015211139A (ja
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Publication of JP2015211139A5 publication Critical patent/JP2015211139A5/ja
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JP2014092095A 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法 Active JP6200849B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014092095A JP6200849B2 (ja) 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014092095A JP6200849B2 (ja) 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法

Publications (3)

Publication Number Publication Date
JP2015211139A JP2015211139A (ja) 2015-11-24
JP2015211139A5 true JP2015211139A5 (de) 2017-01-19
JP6200849B2 JP6200849B2 (ja) 2017-09-20

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JP2014092095A Active JP6200849B2 (ja) 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法

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JP (1) JP6200849B2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6907217B2 (ja) * 2016-01-20 2021-07-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 横方向ハードマスク凹部縮小のためのハイブリッドカーボンハードマスク
WO2018037799A1 (ja) * 2016-08-25 2018-03-01 日本ゼオン株式会社 プラズマエッチング方法
JP6928548B2 (ja) * 2017-12-27 2021-09-01 東京エレクトロン株式会社 エッチング方法
US20200203234A1 (en) * 2018-12-14 2020-06-25 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Method of forming high aspect ratio features in semiconductor substrate
CN112119484B (zh) * 2019-04-19 2024-03-22 株式会社日立高新技术 等离子体处理方法
JP7296277B2 (ja) * 2019-08-22 2023-06-22 東京エレクトロン株式会社 エッチングする方法、デバイス製造方法、及びプラズマ処理装置
CN117223091A (zh) * 2022-04-11 2023-12-12 株式会社日立高新技术 等离子处理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
JP2008071951A (ja) * 2006-09-14 2008-03-27 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP5491648B2 (ja) * 2006-10-06 2014-05-14 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法
JP2009193989A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP2010205967A (ja) * 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体

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