JP2015207688A5 - - Google Patents
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- Publication number
- JP2015207688A5 JP2015207688A5 JP2014087999A JP2014087999A JP2015207688A5 JP 2015207688 A5 JP2015207688 A5 JP 2015207688A5 JP 2014087999 A JP2014087999 A JP 2014087999A JP 2014087999 A JP2014087999 A JP 2014087999A JP 2015207688 A5 JP2015207688 A5 JP 2015207688A5
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- gas
- dry etching
- etching method
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 230000003993 interaction Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014087999A JP6295130B2 (ja) | 2014-04-22 | 2014-04-22 | ドライエッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014087999A JP6295130B2 (ja) | 2014-04-22 | 2014-04-22 | ドライエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015207688A JP2015207688A (ja) | 2015-11-19 |
| JP2015207688A5 true JP2015207688A5 (enExample) | 2017-01-19 |
| JP6295130B2 JP6295130B2 (ja) | 2018-03-14 |
Family
ID=54604269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014087999A Active JP6295130B2 (ja) | 2014-04-22 | 2014-04-22 | ドライエッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6295130B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9865484B1 (en) * | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| JP7344867B2 (ja) * | 2017-08-04 | 2023-09-14 | ラム リサーチ コーポレーション | 水平表面上におけるＳｉＮの選択的堆積 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4376672A (en) * | 1981-10-26 | 1983-03-15 | Applied Materials, Inc. | Materials and methods for plasma etching of oxides and nitrides of silicon |
| JPH0722149B2 (ja) * | 1983-11-28 | 1995-03-08 | 株式会社日立製作所 | 平行平板形ドライエッチング装置 |
| JP2974512B2 (ja) * | 1992-08-21 | 1999-11-10 | 日新電機株式会社 | エッチング方法及び装置 |
| US6051504A (en) * | 1997-08-15 | 2000-04-18 | International Business Machines Corporation | Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma |
| US6461529B1 (en) * | 1999-04-26 | 2002-10-08 | International Business Machines Corporation | Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme |
| JP3439455B2 (ja) * | 2000-12-18 | 2003-08-25 | Ｎｅｃエレクトロニクス株式会社 | 異方性ドライエッチング方法 |
| US9324572B2 (en) * | 2010-03-04 | 2016-04-26 | Tokyo Electron Limited | Plasma etching method, method for producing semiconductor device, and plasma etching device |
| US8999856B2 (en) * | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
| JP5802454B2 (ja) * | 2011-06-30 | 2015-10-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
-
2014
- 2014-04-22 JP JP2014087999A patent/JP6295130B2/ja active Active
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