JP2015204384A - Process liquid supply device, substrate processing apparatus, process liquid supply method, and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a process liquid supply device and a process liquid supply method capable of supplying a process liquid to a processing object while preventing the charging of the processing object or neutralizing of the processing object, and to provide a substrate processing apparatus and a substrate processing method capable of processing a substrate by using the process liquid, while preventing the charging of the substrate or neutralizing of the substrate.SOLUTION: A substrate processing apparatus 1 includes a water supply unit 5 for supplying water to the surface of a substrate W held by a spin chuck 3. The water supply unit 5 includes a water nozzle 13 having a delivery port 14, a water pipe 15 for supplying a process liquid to the water nozzle 13, a branch pipe 16 branched from the water pipe 15, and a soft X-ray irradiation unit 17 arranged oppositely to the branch pipe 16 and generating charges in the process liquid, by irradiating the process liquid existing in the branch pipe 16 with soft X-ray.

Description

  The present invention relates to a processing liquid supply apparatus, a substrate processing apparatus, a processing liquid supply method, and a substrate processing method. The processing object using the processing liquid includes a substrate, a container, and the like. Examples of substrates used as processing objects include semiconductor wafers, glass substrates for liquid crystal display devices, plasma display substrates, FED (Field Emission Display) substrates, OLED (organic electroluminescence) substrates, optical disk substrates, and magnetic substrates. Substrates such as a disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, and a solar cell substrate are included.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a treatment liquid is supplied to the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel, and the surface of the substrate is washed with the treatment liquid.
For example, a substrate processing apparatus that performs a single wafer cleaning process that processes substrates one by one, a spin chuck that rotates the substrate while holding the substrate substantially horizontally with a plurality of chuck pins, and the spin chuck And a processing liquid nozzle for supplying a processing liquid to the surface of the substrate rotated by.

  When processing the substrate, the substrate is rotated by a spin chuck. And a chemical | medical solution is supplied to the surface of the rotating substrate from a process liquid nozzle. The chemical solution supplied onto the surface of the substrate flows on the surface of the substrate toward the peripheral edge under the centrifugal force due to the rotation of the substrate. As a result, the chemical solution spreads over the entire surface of the substrate, and the treatment of the substrate surface with the chemical solution is achieved. And after the process by this chemical | medical solution, the rinse process for washing away the chemical | medical solution adhering to a board | substrate with a pure water is performed. That is, pure water is supplied from the treatment liquid nozzle to the surface of the substrate rotated by the spin chuck, and the pure water spreads by receiving the centrifugal force due to the rotation of the substrate, so that the chemical solution adhered to the surface of the substrate Is washed away. After the rinsing process, the rotation speed of the substrate by the spin chuck is increased, and a spin dry process is performed in which pure water adhering to the substrate is shaken off and dried.

JP 2005-191511 A

  However, in such a conventional substrate processing apparatus, during the rinsing process, contact separation occurs between the surface of the rotating substrate and pure water, and the substrate may be fluidly charged. When the substrate is a glass substrate or a silicon wafer, the substrate is positively charged. If the substrate is charged, there is a risk of destruction of devices formed on the surface of the substrate when the discharge of the charge occurs.

The problem of preventing charging during the cleaning process (rinsing process) is not limited to the case where the object to be processed is a substrate, but is a problem common to cases where the object to be processed is a container or the like.
Accordingly, an object of the present invention is to provide a processing liquid supply apparatus and a processing liquid supply method capable of supplying a processing liquid to the processing object while preventing or neutralizing the processing object.
Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of performing a process using a processing liquid on the substrate while preventing or eliminating the charge of the substrate.

  The invention according to claim 1 for achieving the above object includes a processing liquid nozzle (13; 713) having a discharge port (14; 714) for discharging a processing liquid to the processing object (W; 802). A treatment liquid pipe (15) for supplying a treatment liquid to the treatment liquid nozzle, a branch pipe (16; 216) branched from the treatment liquid pipe, and disposed opposite to the branch pipe, the interior of the branch pipe And a processing liquid supply device (5; 205; 305; 405) including a processing liquid existing in the substrate and a charge transfer unit (17; 317; 417) that transfers electrons through the conductive window (71; 318; 418). 705).

In this section, the alphanumeric characters in parentheses represent reference signs of corresponding components in the embodiments described later, but the scope of the claims is not limited to the embodiments by these reference numerals.
According to this configuration, charges are transferred between the processing liquid present in the branch pipes by the charge transfer unit. The processing liquid discharged from the discharge port of the processing liquid pipe is supplied to the processing object and comes into contact with the processing object.

When the processing liquid discharged from the discharge port is connected in a liquid state between the discharge port and the object to be processed, a portion where charge is transferred in the processing liquid in the branch pipe (hereinafter referred to as “charge of processing liquid”). The transfer part is referred to as “the transfer part”) and the processing liquid in contact with the processing object is connected via the processing liquid.
At this time, if the processing object is positively charged, the negative charge (electrons) in the charge transfer portion of the processing liquid is caused to the processing target due to the potential difference between the charge transfer portion of the processing liquid and the processing target. It moves along the treatment liquid connected to the liquid toward the treatment liquid in contact with the liquid. As a result, the processing liquid in contact with the processing target has a negative charge in an amount commensurate with the charging of the processing target, and thus the positively charged processing target is neutralized.

On the other hand, when the object to be processed is negatively charged, the negative charge from the object to be processed becomes the positive charge of the part to be charged and received in the process liquid due to the potential difference between the charge-receiving part of the process liquid and the object to be processed. It moves along the processing liquid connected to the liquid. As a result, the object that is negatively charged is neutralized.
Therefore, it is possible to prevent the charging of the processing object during the supply of the processing liquid.

Further, even when the processing target is charged before the processing liquid is supplied, the processing target can be satisfactorily discharged.
As described above, the treatment liquid can be supplied to the treatment object while preventing the charge of the treatment object or eliminating the charge.
According to a second aspect of the present invention, the processing liquid discharged from the discharge port is set to a flow rate such that the processing liquid forms a continuous flow connected to both the discharge port and the processing object. The processing liquid supply apparatus according to claim 1.

According to this configuration, the processing liquid discharged from the discharge port forms a continuous flow that is connected to both the discharge port and the object to be processed. Thereby, it is realizable to connect a discharge outlet and a process target object with a process liquid with a simple structure.
The processing liquid supply device controls the first flow rate adjustment unit (19) for adjusting the flow rate of the processing liquid supplied from the processing liquid pipe to the discharge port, and the first flow rate adjustment unit, And a discharge control unit (40) for adjusting the flow rate of the processing liquid discharged from the discharge port so that the processing liquid forms a continuous flow connected to both the discharge port and the object to be processed. Also good.

As described in claim 3, the branch pipe has a discharge port (23) and includes a discharge pipe (22) for discharging a processing liquid flowing through the branch pipe. The processing liquid supply apparatus may be used.
The invention described in claim 4 is the processing liquid supply apparatus according to claim 3, wherein the processing liquid discharged from the discharge port is set to a small flow rate so that the processing liquid does not become a continuous flow. .

  According to this configuration, the processing liquid discharged from the discharge port does not form a continuous flow but drops, for example, in the form of droplets. In this case, the discharge port is not connected to the peripheral member via the processing liquid. Therefore, it is possible to prevent the charge generated in the charge transfer portion of the processing liquid from leaking from the discharge port. Thereby, the charge generated in the charge transfer portion of the processing liquid can be efficiently used only for the exchange of charges with the processing liquid in contact with the processing target. Thereby, antistatic efficiency or static elimination efficiency can be improved.

The processing liquid that has passed through the discharge pipe is normally discarded. However, since the flow rate of the processing liquid discharged from the discharge port is small, it is possible to reduce the amount of processing liquid (discarded liquid) that is discarded.
The processing liquid supply device controls a second flow rate adjustment unit (21) that adjusts the flow rate of the processing liquid supplied from the branch pipe to the discharge port, and the second flow rate adjustment unit, It may further include a discharge control unit (40) that adjusts the flow rate of the processing liquid discharged from the discharge port to a small flow rate so that the processing liquid does not become a continuous flow.

  According to a fifth aspect of the present invention, the processing liquid pipe and the branch pipe include a processing liquid included in a portion (216C) downstream of the facing position (216A) facing the charge transfer unit in the branch pipe. The electrical resistance value of the part (216B) upstream of the facing position in the branch pipe and the part of the processing liquid pipe downstream from the branch position (15A) of the branch pipe ( The processing liquid supply apparatus according to claim 3 or 4, wherein the processing liquid supply apparatus is set to be larger than a sum of electric resistance values of 15B).

According to this configuration, the electrical resistance value of the downstream portion of the branch pipe from the facing position facing the charge transfer unit is higher than the facing position of the branch pipe facing the charge transfer unit, and the processing liquid. The sum of the electrical resistance values on the downstream side of the branch position of the branch pipe in the pipe is larger.
Therefore, the charge generated in the processing liquid in the branch pipe by the charge transfer unit moves more toward the discharge port rather than the discharge port due to the ratio of the electrical resistance of each processing solution. Thereby, it is possible to suppress the charge generated in the processing liquid in the branch pipe from leaking from the discharge port side, and the generated charge can be efficiently used for the exchange of charges with the processing object. it can. Thereby, antistatic efficiency or static elimination efficiency can be improved.

  As described in claim 6, the charge transfer unit may include an X-ray irradiation unit (17) for irradiating the processing liquid existing in the branch pipe with X-rays. In this case, the processing liquid existing in the branch pipe is irradiated with X-rays. In the portion of the treatment liquid that is irradiated with X-rays, the water molecules are ionized by excitation of water molecules, and as a result, a plasma state in which positive charges and negative charges are mixed is formed.

In the present specification and claims, “X-ray” refers to an electromagnetic wave having a wavelength of about 0.001 nm to 10 nm, and “soft X-ray” (about 0.1 nm to 10 nm) having a relatively long wavelength. And “hard X-ray” (about 0.001 nm to 0.1 nm) having a relatively short wavelength.
As described in claim 7, the charge transfer unit may include an atmospheric pressure plasma unit (317) that discharges plasma gas in an atmospheric pressure environment. In this case, the plasma gas contains a large amount of positive charges and negative charges, and charges are imparted to the processing liquid existing in the branch pipe via the conductive window (318).

As described in claim 8, the charge transfer unit may include a discharge unit (417) that generates a discharge (corona discharge) and supplies the ionized gas. In this case, the electric charge generated by the discharge is applied to the processing liquid existing in the branch pipe through the conductive window (418).
The invention described in claim 9 for achieving the above object includes a substrate holding means (3; 704) for holding the substrate (W), and a processing liquid supply according to any one of claims 1 to 8. A substrate processing apparatus (1) including a device (5; 205; 305; 405; 705) and supplying the processing liquid discharged from the discharge port to the main surface of the substrate held by the substrate holding means. 201; 301; 401; 501; 601; 701).

According to this configuration, the inside of the branch pipe communicates with the discharge port of the processing liquid pipe. Electric charges are generated in the processing liquid present in the branch pipe by the charge transfer unit. The processing liquid discharged from the discharge port of the processing liquid piping is supplied to the processing target and comes into contact with the processing target.
When the processing liquid discharged from the discharge port is connected in a liquid state between the discharge port and the processing object, a portion (hereinafter, referred to as charge) is exchanged between the processing object and the processing liquid in the branch pipe. Is connected via the processing liquid.

At this time, if the processing object is positively charged, the negative charge (electrons) in the charge transfer portion of the processing liquid is caused to the processing target due to the potential difference between the charge transfer portion of the processing liquid and the processing target. It moves along the treatment liquid connected to the liquid toward the treatment liquid in contact with the liquid. As a result, the processing object that is positively charged is discharged.
On the other hand, when the processing object is negatively charged, due to the potential difference between the processing object and the charge transfer portion of the processing liquid, the electrons from the processing object travel along the processing liquid connected to the liquid. It moves toward the positive charge of the charge transfer portion of the liquid. As a result, the object that is negatively charged is neutralized.

Therefore, it is possible to prevent the object to be charged from being charged when the processing liquid is supplied, and the substrate is not charged due to contact separation with the processing liquid.
Further, even when the processing target is charged before the processing liquid is supplied, the processing target can be satisfactorily discharged.
As described above, the substrate can be treated with the treatment liquid while preventing the charge of the substrate or eliminating the charge.

The substrate holding means may include a substrate holding and rotating means (3) that rotates the substrate around a predetermined vertical rotation axis while holding the substrate in a horizontal posture, and holds the substrate while holding the substrate. A substrate holding / conveying means (704) for conveying in a predetermined conveying direction (X) may be included.
The processing tank (502) which stores a processing liquid as described in Claim 10, and immerses a process target object in the processing liquid, The processing liquid supply apparatus as described in any one of Claims 1-8. (5; 205; 305; 405; 705), and the processing liquid discharged from the discharge port may be stored in the processing tank.

  In order to achieve the above-mentioned object, the invention according to claim 11 is characterized in that from the discharge port (14; 714) of the treatment liquid nozzle (13; 713) of the treatment liquid supply device (5; 205; 305; 405; 705). A treatment liquid supply method for discharging a treatment liquid and supplying the treatment liquid to a treatment object (W; 802), wherein the discharge port is disposed opposite to the treatment object; The processing liquid existing inside the branch pipe (16; 216) branched from the processing liquid pipe (15) for supplying the processing liquid to the processing liquid nozzle, and the charge to be transferred by the charge transfer unit (17; 317; 417) In addition to the transfer process (S4) and the process liquid discharge process (S4) for discharging the process liquid from the discharge port in parallel with the charge transfer process, in the process liquid discharge process, the discharge port and the processing object Treatment liquid between objects Is provided in a liquid state.

According to this method, the same effect as the effect described in relation to claim 1 can be obtained.
According to a twelfth aspect of the present invention, in the processing liquid discharge step, the processing liquid discharged from the discharge port has a continuous flow shape connected to both the discharge port and the processing object. 11. The processing liquid supply method according to 11.
According to this method, the same function and effect as those described in relation to claim 2 are obtained.

  According to a thirteenth aspect of the present invention, the main surface of the substrate (W) is processed using a processing liquid supplied from a processing liquid supply device (5; 205; 305; 405; 705). A substrate processing method for disposing an ejection port (14; 714) opposite to a main surface of the substrate held by a substrate holding means (3; 704); A charge transfer step (in which charges are transferred by the charge transfer unit (17; 317; 417) and the processing solution existing inside the branch pipe (16; 216) branched from the processing liquid pipe (15) for supplying the processing liquid to S4) and a processing liquid discharge step (S4) for discharging a processing liquid from the discharge port in parallel with the charge transfer step, and in the processing liquid discharge step, the discharge port and the main surface of the substrate The treatment liquid is connected to the liquid state between That is a substrate processing method.

  According to this method, the same function and effect as those described in connection with claim 9 are achieved.

It is a figure which shows the structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the structure of a part of soft X-ray irradiation unit and branch piping shown in FIG. It is process drawing which shows the process example performed in the substrate processing apparatus shown in FIG. It is a timing chart for demonstrating the water supply process shown in FIG. It is a figure which shows the state which has given the water supply process to the board | substrate. It is a figure which shows the structure of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. It is a figure for demonstrating the modification of the branch piping which concerns on 2nd Embodiment of this invention. It is a figure which shows the structure of the substrate processing apparatus which concerns on 3rd Embodiment of this invention. It is a figure which shows the structure of the substrate processing apparatus which concerns on 4th Embodiment of this invention. It is a figure which shows the structure of the substrate processing apparatus which concerns on 5th Embodiment of this invention. It is a figure which shows the structure of the substrate processing apparatus which concerns on 6th Embodiment of this invention. It is a figure which shows the structure of the substrate processing apparatus which concerns on 7th Embodiment of this invention. It is a perspective view which shows the structure of the roller conveyance unit shown in FIG. It is sectional drawing which shows the state which has given the water supply process to the board | substrate. It is a figure which shows the structure of the articles | goods washing apparatus with which the process liquid supply apparatus which concerns on 8th Embodiment of this invention was applied. It is a perspective view which shows the structure of the board | substrate container shown in FIG. It is a figure which shows the structure of the articles | goods washing apparatus with which the process liquid supply apparatus which concerns on 9th Embodiment of this invention was applied. It is a figure which shows the structure of the substrate processing apparatus which concerns on another form.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention.
The substrate processing apparatus 1 is a single wafer used for processing a surface (processing target surface) of a circular semiconductor wafer (silicon wafer) as an example of a substrate (processing target) W with a processing solution (chemical solution and water). Device. In this embodiment, water is used for rinsing the substrate W performed after the chemical treatment.

  The substrate processing apparatus 1 is held in a processing chamber 2 partitioned by a partition wall (not shown), a spin chuck (substrate holding and rotating means) 3 that holds and rotates the substrate W in a horizontal position, and the spin chuck 3. A chemical supply unit 4 for supplying a chemical to the surface of the substrate W, and a water supply unit (treatment liquid supply) for supplying DIW (deionized water) as an example of water to the surface of the substrate W Device) 5.

  As the spin chuck 3, for example, a pinching type is adopted. Specifically, the spin chuck 3 includes a spin motor 6, a spin shaft 7 integrated with a drive shaft of the spin motor 6, and a disk-shaped spin base attached to the upper end of the spin shaft 7 substantially horizontally. 8 and a plurality of clamping members 9 provided at substantially equal intervals at a plurality of locations on the peripheral edge of the spin base 8. As a result, the spin chuck 3 rotates the spin base 8 by the rotational driving force of the spin motor 6 in a state where the substrate W is sandwiched by the plurality of sandwiching members 9, thereby bringing the substrate W into a substantially horizontal posture. In this state, the spin base 8 can be rotated around the vertical rotation axis A1.

Note that the spin chuck 3 is not limited to a sandwich type, and for example, the back surface of the substrate W is vacuum-sucked to hold the substrate W in a horizontal posture and further rotate around a vertical rotation axis in that state. Thus, a vacuum chucking type (vacuum chuck) that can rotate the held substrate W may be employed.
The chemical solution supply unit 4 includes a chemical solution nozzle 10, a chemical solution pipe 11, and a chemical solution valve 12. The chemical liquid nozzle 10 is, for example, a straight nozzle that discharges chemical liquid in a continuous flow state, and is fixedly disposed above the spin chuck 3 with its discharge port directed toward the center of the substrate W. The chemical liquid pipe 11 is connected to the chemical liquid nozzle 10 and supplies the chemical liquid from the chemical liquid supply source to the chemical liquid nozzle 10. The chemical liquid valve 12 is interposed in the middle of the chemical liquid pipe 11 and switches discharge / discharge stop of the chemical liquid from the chemical liquid nozzle 10.

The chemical nozzle 10 does not need to be fixedly disposed with respect to the spin chuck 3. For example, the chemical nozzle 10 is attached to an arm that can swing in a horizontal plane above the spin chuck 3, and the substrate W is moved by the swing of the arm. A so-called scan nozzle may be employed in which the position where the chemical solution is deposited on the surface of the nozzle is scanned.
In addition, as a chemical | medical solution, the thing according to the content of the process with respect to the surface of the board | substrate W is used. For example, when performing a cleaning process for removing particles from the surface of the substrate W, APM (ammonia-hydrogen peroxide mixture) or the like is used. Further, when performing a cleaning process for etching an oxide film or the like from the surface of the substrate W, hydrofluoric acid, BHF (Buffered HF), TMAH (tetramethylammonium hydroxide aqueous solution) or the like is used. When performing a resist stripping process for stripping the formed resist film or a polymer stripping process for removing the resist residue remaining as a polymer on the surface of the substrate W after stripping the resist, SPM (sulfuric acid / A resist stripping solution and a polymer removing solution such as hydrogen peroxide mixture (sulfuric acid / hydrogen peroxide mixture) and APM (ammonia-hydrogen peroxide mixture) are used. Cleaning treatment to remove metal contaminants includes hydrofluoric acid, HPM (hydrochloric acid / hydrogen peroxide mixture) and SPM (sulfuric acid / hydrogen peroxide mixture). Is used.

  The water supply unit 5 includes a water nozzle (treatment liquid nozzle) 13, a water pipe (treatment liquid pipe) 15, a branch pipe 16 branched from a middle portion of the water pipe 15, and a soft X-ray irradiation unit as a charge transfer unit. (X-ray irradiation unit) 17. The soft X-ray irradiation unit 17 is disposed so as to face the middle portion of the branch pipe 16 and irradiates water existing in the branch pipe 16 with soft X-rays.

  The water nozzle 13 is, for example, a straight nozzle that discharges a chemical solution in a continuous flow state, and is fixedly disposed with the discharge port 14 directed toward the center of the substrate W. The water nozzle 13 does not need to be fixedly arranged with respect to the spin chuck 3. For example, the water nozzle 13 is attached to an arm that can swing in a horizontal plane above the spin chuck 3, and the substrate W is moved by the swing of the arm. A so-called scan nozzle form in which the liquid landing position on the surface of the liquid is scanned may be employed.

  The water pipe 15 is connected to the water nozzle 13 and supplies water (DIW) from a water supply source (DIW supply source) to the water nozzle 13. The water pipe 15 is formed using a resin material such as polyvinyl-chloride, PTFE (polytetra-fluoroethylene), PFA (perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer). . A branch pipe 16 branches from a predetermined branch position 15 </ b> A in the water pipe 15. A water valve 18 and a water flow rate adjusting valve (first flow rate adjusting unit) 19 are provided in a portion of the water pipe 15 downstream of the branch position 15A of the branch pipe 16 (hereinafter referred to as “downstream portion 15B”). Are interposed in this order from the water nozzle 13 side. The water valve 18 switches supply / stop of water from the water nozzle 13. The water flow rate adjustment valve 19 adjusts the flow rate of water discharged from the water nozzle 13. The water flow rate adjusting valve 19 includes a valve body in which a valve seat is provided, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. The same applies to other flow rate adjusting valves.

Valves 18 and 19 are covered with a fluororesin (PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer) or the like) at a portion defining the flow path. The same applies to the other valves.
The branch pipe 16 is a discharge pipe for discharging water flowing through the water pipe 15 to the outside of the pipe. The branch pipe 16 is formed using a resin material such as polyvinyl-chloride, PTFE (polytetra-fluoroethylene), or PFA (perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer). . The same applies to other branch pipes. A discharge nozzle 22 is attached to the tip of the branch pipe 16 (the end opposite to the end branched from the water pipe 15). The discharge nozzle 22 is, for example, a straight nozzle that discharges water in a continuous flow state, and is fixedly disposed with the discharge port 23 serving as a discharge port facing downward, for example. The discharge nozzle 22 has a discharge port 23. The upstream side portion of the branch pipe 16 (attachment position of the soft X-ray irradiation unit 17 (opposite position facing the soft X-ray irradiation unit 17 in the branch pipe 16) 16A (a portion on the upstream side of FIG. 2) In 16B, a branch valve 20 and a branch flow rate adjustment valve (second flow rate adjustment unit) 21 are interposed in this order from the discharge nozzle 22 side. The branch valve 20 switches between discharging / stopping water from the discharge nozzle 22. The branch flow rate adjustment valve 21 adjusts the flow rate of water discharged from the discharge nozzle 22.

  A drain pan 24 is disposed below the discharge nozzle 22 at a predetermined interval from the discharge port 23 of the discharge nozzle 22. The drainage pan 24 has a dish shape and is provided so that a small amount of received water can be stored. The drain pan 24 may be formed using, for example, a metal material. Further, the drain pan 24 may be grounded. The water discharged from the discharge nozzle 22 is received by the drain pan 24 and stored. The water stored in the drain pan 24 is sent to the waste liquid apparatus outside the machine through the drain port 24A and is subjected to waste liquid treatment.

FIG. 2 is a cross-sectional view showing a partial configuration of the soft X-ray irradiation unit 17 and the branch pipe 16 shown in FIG.
At the attachment position 16A of the branch pipe 16, a pipe side opening 16E is formed in the pipe wall. A soft X-ray irradiation unit 17 is attached to the attachment position 16A so as to close the piping side opening 16E. The inside of the branch pipe 16 communicates with the discharge port 14 (see FIG. 1) of the water pipe 15.

  The soft X-ray irradiation unit 17 includes a soft X-ray generator 25 and a cover 26 made of, for example, polyvinyl chloride that covers the periphery of the soft X-ray generator 25. The cover 26 is a horizontally long rectangular box surrounding the soft X-ray generator 25 with a space from the soft X-ray generator 25, and the soft X-ray generator 25 is formed on a vertical plate-like horizontal wall 26 </ b> A. A unit-side opening 28 having a size matching the pipe-side opening 16E is formed in a portion facing the irradiation window 35 described next. The soft X-ray irradiation unit 17 is attached to the branch pipe 16 so that the unit side opening 28 of the cover 26 coincides with the pipe side opening 16E of the branch pipe 16 and the lateral wall 26A is in close contact with the outer periphery of the branch pipe 16. ing.

The unit side opening 28 is closed by a window member (conductive window) 71 made of a material that can transmit soft X-rays, for example, beryllium (Be). The window member 71 closes the unit side opening 28 from the inside of the cover 26. The window member 71 closes not only the unit side opening 28 but also the pipe side opening 16E.
The soft X-ray generator 25 emits (radiates) soft X-rays used for ionizing the processing liquid passing through the branch pipe 16. The soft X-ray generator 25 includes a case body 29, a soft X-ray tube 30 that is long to generate soft X-rays, and a high voltage unit 31 that supplies a high voltage to the soft X-ray tube 30. Yes. The case body 29 is in the shape of a horizontally long rectangular tube that accommodates the soft X-ray tube 30 and the high voltage unit 31, and is made of a material having conductivity and heat conductivity (for example, a metal material such as aluminum). It is formed using.

The high voltage unit 31 inputs a driving voltage having a high potential of 9.5 kV, for example, to the soft X-ray tube 30. The high voltage unit 31 is supplied with a voltage from a power source (not shown) through a feed line 43 drawn out of the cover 26 through a through hole 42 formed in the cover 26.
The soft X-ray tube 30 is made of a glass or metal cylindrical vacuum tube, and is arranged so that the tube direction is horizontal. One end (opening end, left end shown in FIG. 2) of the soft X-ray tube 30 forms a circular opening 41. The other end of the soft X-ray tube 30 (the right end shown in FIG. 2) is closed and serves as a stem 32. In the soft X-ray tube 30, a filament 33 serving as a cathode and a target 36 serving as an anode are disposed so as to face each other. The soft X-ray tube 30 houses a filament 33 and a focus 34. Specifically, a filament 33 as a cathode is disposed on the stem 32. The filament 33 is electrically connected to the high voltage unit 31. The filament 33 is surrounded by a cylindrical focus 34.

  The open end portion of the soft X-ray tube 30 is closed by a plate-shaped irradiation window 35 having a vertical posture. For example, beryllium (Be) is used as the material of the irradiation window 35. The irradiation window 35 has a disk shape, for example, and is fixed to the wall surface of the open end of the soft X-ray tube 30 by silver brazing. The thickness of the irradiation window 35 is set to about 0.3 mm, for example. The irradiation window 35 faces the inner surface 71 </ b> A of the window member 71 and is arranged at a minute distance from the window member 71. A metal target 36 such as tungsten (W) or tantalum (Ta) is formed on the inner surface 35A of the irradiation window 35 by vapor deposition. A metal having a large atomic weight and a high melting point is used for the target 36.

  When the driving voltage from the high voltage unit 31 is applied to the filament 33 which is a cathode, the filament 33 emits electrons. The electrons emitted from the filament 33 are converged by the focus 34 to become an electron beam and collide with the target 36 to generate soft X-rays. The generated soft X-rays are emitted (radiated) from the irradiation window 35 toward the left as shown in FIG. 2, and irradiate the inside of the branch pipe 16 through the window member 71 and the pipe side opening 16E. The soft X-ray irradiation angle (irradiation range) from the irradiation window 35 is a wide angle (for example, 130 °) as shown in FIG. The soft X-ray irradiated from the irradiation window 35 to the inside of the branch pipe 16 has a wavelength of, for example, 0.13 to 0.4 nm.

  As shown in FIG. 1, the substrate processing apparatus 1 further includes a control unit 40 configured to include a microcomputer. The control unit 40 controls operations of the spin motor 6, the soft X-ray generator 25, and the like according to a predetermined program. The control unit 40 controls opening and closing of the water valve 18 and the branch valve 20 and controls the actuators of the flow rate adjusting valves 19 and 21 to control the opening degree of the flow rate adjusting valves 19 and 21.

  FIG. 3 is a process diagram showing a processing example of the substrate W executed in the substrate processing apparatus 1. FIG. 4 is a timing chart for explaining the water supply process (S4). FIG. 5 is a diagram showing a state where the water supply process (S4) is performed on the substrate W. FIG. The processing of the substrate W in the substrate processing apparatus 1 will be described with reference to FIGS. 4 and 5 will be referred to as appropriate.

During the processing of the substrate W, an unprocessed substrate W is carried into the processing chamber 2 by a transfer robot (not shown) (step S1), and the surface (device formation surface) is directed upward. Is passed on.
After the substrate W is held on the spin chuck 3, the control unit 40 controls the spin motor 6 to start rotation of the substrate W by the spin chuck 3 (step S2). The rotation speed of the substrate W is increased to a predetermined liquid processing speed (for example, 500 rpm), and then maintained at the liquid processing speed.

  When the rotation speed of the substrate W reaches the liquid processing speed, the control unit 40 opens the chemical liquid valve 12 and discharges the chemical liquid from the chemical liquid nozzle 10 toward the rotation center of the upper surface of the substrate W. The chemical solution supplied to the upper surface of the substrate W receives a centrifugal force due to the rotation of the substrate W and flows toward the periphery of the substrate W (spreads over the entire area of the substrate W). Thereby, the process by a chemical | medical solution is given to the whole surface of the board | substrate W (S3: Chemical process).

When a predetermined period has elapsed from the start of the supply of the chemical solution, the control unit 40 closes the chemical solution valve 12 and stops the supply of the chemical solution from the chemical solution nozzle 10. Further, the control unit 40 opens the water valve 18 and performs a water supply process (S4, that is, a rinsing process) for supplying water to the upper surface of the substrate W.
In this water supply process (step S4), the water valve 18 is opened, so that water from the water supply source flows through the water pipe 15 and is discharged from the discharge port 14 of the water nozzle 13, but slightly more ( The control unit 40 opens the branch valve 20 earlier (for example, about several seconds). Thereby, the water flowing through the water pipe 15 flows into the branch pipe 16 from the branch position 15 </ b> A and flows through the branch pipe 16. The water flowing through the branch pipe 16 is discharged from the discharge port 23 of the discharge nozzle 22.

  Further, almost simultaneously with the opening of the branch valve 20, as shown in FIGS. 4 and 5, the control unit 40 controls the soft X-ray generator 25 (see FIG. 2, the high-voltage unit 31) to perform soft X-rays. The generator 25 generates soft X-rays and irradiates the soft X-rays inside the attachment position 16 </ b> A of the branch pipe 16 through the window member 71 and the unit side opening 28. Thereby, soft X-rays are irradiated to the water flowing through the attachment position 16A (existing at the attachment position 16A). Of the water flowing through the attachment position 16A (existing at the attachment position 16A), the portion irradiated with soft X-rays (hereinafter referred to as “water charge exchange portion (treatment liquid charge exchange portion) D1”). .) Forms a plasma state in which a large amount of negative charges (electrons and negative ions) and a large amount of positive charges (positive ions) are mixed.

Further, during the water supply process (S4), the branch valve 20 is opened, and the branch flow rate adjusting valve 21 is also opened although its opening degree is small. Further, during the water supply process (S4), the water is in a liquid-tight state in the water pipe 15 and the branch pipe 16. Therefore, the discharge port 14 and the water charge transfer portion D1 are connected by water.
The water supply flow rate to the water nozzle 13 during the water supply process (S4) is set to a relatively large flow rate (for example, 0.5 to 2.0 L / min). The water supplied to the upper surface of the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the peripheral edge of the substrate W (spreads over the entire area of the substrate W). As a result, a liquid film 60 of water in contact with the entire area of the upper surface (covering the entire area of the upper surface) is formed on the upper surface of the substrate W. The chemical liquid adhering to the upper surface of the substrate W is washed away by the water liquid film 60.

  Since the water supply flow rate to the water nozzle 13 is set to a relatively large flow rate, the mode of water discharged from the discharge port 14 is the same for both the discharge port 14 and the liquid film 60 of water on the upper surface of the substrate W. It is connected in a continuous flow. In other words, the opening of the water flow rate adjusting valve 19 is such that the mode of water discharged from the discharge port 14 is a continuous flow that connects both the discharge port 14 and the liquid film 60 of water on the upper surface of the substrate W. Is set to

  On the other hand, the water supply flow rate to the discharge nozzle 22 during the water supply process (S4) is set to a relatively small flow rate (for example, 0.05 to 0.1 L / min). Therefore, the mode of water discharged from the discharge port 23 of the discharge nozzle 22 is not a continuous flow but a droplet. In other words, the opening degree of the branch flow rate adjusting valve 21 is set so that the water discharged from the discharge port 23 is in the form of droplets.

  During the water supply process (S4), the branch valve 20 is opened, and the branch flow rate adjusting valve 21 is also opened although its opening degree is small. Further, during the water supply process (S4), the water is in a liquid-tight state in the water pipe 15 and the branch pipe 16. Therefore, the discharge port 14 and the water charge transfer portion D1 are connected by water. Further, the liquid film 60 of water in contact with the substrate W and the discharge port 14 are connected by water. Thereby, the charge exchange part D1 of water and the liquid film 60 of water are connected through water.

When the substrate W is positively charged, as shown in FIG. 5, the negative charge from the water charge transfer portion D1 is caused by the potential difference between the water charge transfer portion D1 and the positively charged substrate W. It moves along the continuous flow of water toward the liquid film 60 of water on the upper surface of the substrate W. Thereby, the liquid film 60 of water on the upper surface of the substrate W has a large amount of negative charges (electrons), and the substrate W is discharged.
The water discharged from the discharge port 23 of the discharge nozzle 22 is received by the drain pan 24. Since water is discharged from the discharge port 23 of the discharge nozzle 22 in the form of droplets, the drain pan 24 and the discharge port 23 are not connected via water.

  As shown in FIGS. 1, 3, and 4, when a predetermined period has elapsed from the start of water supply, the control unit 40 closes the water valve 18 and stops supplying water, and then controls the high voltage unit 31. Then, the soft X-ray irradiation from the soft X-ray irradiation unit 17 is stopped, and the control unit 40 closes the branch valve 20 to stop the drainage of water. Thus, when the supply of water from the water nozzle 13 is stopped, the discharge of water from the discharge nozzle 22 is also stopped, but the timing is the discharge of water from the discharge nozzle 22 and the soft X-ray from the soft X-ray irradiation unit 17. The irradiation of the line starts early and ends late, and the water supply from the water nozzle 13 starts late and ends early. This avoids the supply of water from the water nozzle 13 to the substrate W in the state where the water discharge from the discharge nozzle 22 and the soft X-ray irradiation from the soft X-ray irradiation unit 17 are not performed. Because.

Thereafter, the control unit 40 controls the spin motor 6 to increase the rotation speed of the substrate W to a spin dry rotation speed (for example, 2500 rpm). Thereby, the water adhering to the upper surface of the substrate W after the rinsing process is shaken off by the centrifugal force and dried.
When the spin drying is performed for a predetermined drying time, the rotation of the spin chuck 3 is stopped. Thereafter, the processed substrate W is unloaded from the processing chamber 2 by the transfer robot.

As described above, according to the first embodiment, a large amount of negative charges (electrons) and a large amount of positive charges (positive ions) are generated by irradiating water flowing through the branch pipe 16 with soft X-rays. A mixed plasma state is formed in the water charge transfer portion D1.
On the other hand, the inside of the branch pipe 16 communicates with the discharge port 14 of the water pipe 15. In particular, during the water supply process (S 4), the valves 20 and 21 are opened, and the water pipe 15 and the branch pipe are opened. Water is in a liquid-tight state in the pipe 16. In addition, the liquid film 60 of water in contact with the substrate W and the discharge port 14 are connected by water. Thereby, the charge exchange part D1 of water and the liquid film 60 of water are connected through water.

  If the substrate W is positively charged, the negative charge (electrons) of the water charge transfer portion D1 is caused to the substrate W due to the potential difference between the water charge transfer portion D1 and the substrate W. It moves along the liquid connected to the liquid film 60 of the water in contact with the liquid. The moving negative charges (electrons) cancel the positive charging of the substrate W and work to prevent or suppress the charging of the substrate W.

Therefore, even if water is supplied to the rotating substrate W, charging of the substrate W due to contact separation with water does not occur. Therefore, charging of the substrate W during the rinsing process can be prevented. Further, even if the substrate W is charged before the rinsing process, the charge on the substrate W can be removed (that is, static elimination). As a result, device destruction due to charging of the substrate W can be prevented.
In addition, since the liquidity of water (DIW) does not change due to the soft X-ray irradiation, the device on the substrate W is adversely affected unlike the case where the substrate W is processed using an acidic processing solution such as carbonated water. There is no fear.

  Moreover, the water discharged from the discharge port 23 is dropped in the form of droplets. In this case, the discharge port 23 is not connected to the peripheral member through water. Therefore, it is possible to prevent the charge generated in the water charge transfer portion D <b> 1 from leaking from the discharge port 23. Thereby, the charge generated in the charge generation portion D1 of water can be efficiently used only for the exchange of charges with the liquid film 60 of water in contact with the substrate W. Thereby, antistatic efficiency or static elimination efficiency can be improved.

Moreover, although the water which passed through the branch piping 16 is discarded, since the flow volume of the water discharged from the discharge port 23 is small, it can aim at reduction of the quantity of discarded water (waste water).
FIG. 6A is a diagram showing a configuration of a substrate processing apparatus 201 according to the second embodiment of the present invention.
In FIG. 6A, the same reference numerals as those in FIGS. 1 to 5 are assigned to portions common to the first embodiment, and description thereof is omitted. In the substrate processing apparatus 201, a water supply unit (processing liquid supply apparatus) 205 is provided instead of the water supply unit 5 (see FIG. 1) according to the first embodiment. The water supply unit 205 is different from the water supply unit 5 in that a branch pipe 216 is provided instead of the branch pipe 16, and the other points are common to the water supply unit 5. That is, the soft X-ray irradiation unit 17 is attached to the branch pipe 216, and the upstream side portion of the branch pipe 216 (the mounting position of the soft X-ray irradiation unit 17 (facing the soft X-ray irradiation unit 17 in the branch pipe 216). The branch valve 20 and the branch flow rate adjustment valve 21 are interposed in this order from the discharge nozzle 22 side in the facing position) 216B on the upstream side of 216A.

Here, when the downstream pipe and the upstream pipe have the same pipe thickness, the pipe length of the branch pipe 216 and the mounting position 216A are the downstream portion of the branch pipe 216 (the mounting position of the soft X-ray irradiation unit 17). mounting position of the downstream portion than 216A) 216C of the pipe length _{L S2} (branch pipe facing position facing the soft X-ray irradiation unit 17 in 216) is, upstream portion of the branch pipe 216 (soft X-ray irradiation unit 17 216A an upstream-side portion) 216B of the pipe length _{L S1} than the downstream portion of the water pipe 15 (than the sum of the pipe length _{L P} of the downstream-side portion) 15B of the branch position 15A, so that extremely long (L _S2 >> (L _S1 + L _P )) is set. Specifically, in FIG. 6A, the downstream portion 216C of the branch pipe 216 is wound in a ring shape to increase the length of this portion.

Also in the substrate processing apparatus 201, processing examples equivalent to the processing examples shown in FIGS. 3 and 4 are executed.
At this time, since the same treatment liquid has the same electric resistance, the downstream portion 216C of the branch pipe 216 has a long pipe, so that the electric resistance also increases. Since the sum of the pipe lengths of the upstream portion 216B of the branch pipe 216 and the downstream portion 15B of the water pipe 15 is shorter than the downstream portion 216C of the branch pipe, the downstream portion 216C of the branch pipe has an electric resistance. Becomes larger. The electrical resistance of the processing liquid is inversely proportional to the square of the pipe diameter and increases in proportion to the length. Therefore, by reducing the pipe diameter at a part or all of the downstream portion 216C of the branch pipe 216, The electric resistance can be further increased. Specifically, the electrical resistance can be increased by reducing the pipe diameter of the entire downstream portion 216C. In addition, reducing the pipe diameter effectively works to reduce the flow rate of waste water.

  When the flow rate of water flowing through the branch pipe 216 is substantially the same as the flow rate of water flowing through the water pipe 15, as shown in FIG. 6A, the continuous flow of water discharged from the discharge port 23 of the discharge nozzle 22 Both the discharge port 23 and the drain pan 24 are connected. In this case, when the drain pan 24 is made of metal and connected to the ground, the charge generated in the charge transfer portion D1 of the water by the soft X-ray irradiation is converted into the continuous flow of water and drainage. There is a possibility of moving to the drain pan 24 through the pan 24. That is, the charge generated in the water charge transfer portion D1 leaks from the discharge port 23 side. For this reason, the charge generated in the charge exchange portion D1 of water is used for purposes other than the exchange of charges with the substrate W, and as a result, the antistatic efficiency or the charge removal efficiency may be reduced.

  According to the second embodiment, the electrical resistance of water in the downstream portion 216C is extremely higher than the sum of electrical resistances of water in the upstream portion 216B of the branch pipe 216 and the downstream portion 15B of the water pipe 15. That is, since the electrical resistance of water from the mounting position 216A to the discharge nozzle 22 is higher than the electrical resistance of water from the mounting position 216A to the water nozzle 13, it is generated in the water charge transfer portion D1 by the soft X-ray irradiation. The charge is more likely to move toward the discharge port 14 (upstream portion 216B) than to the discharge port 23 (downstream portion 216C). Thereby, it is possible to suppress the leakage of the charge generated in the water charge generation section D1 from the discharge port 23 side, and use the generated charge efficiently for exchanging charges with the substrate W. Can do. Thereby, antistatic efficiency or static elimination efficiency can be improved.

While pipe diameter of the branch pipe 216 has been described as being equivalent to the water pipe 15, as shown in FIG. 6B, the pipe diameter _{D S2} on the downstream side portion 216C of the branch pipe 216, the upstream portion 216B of the branch pipe 216 it may be provided shorter than the pipe diameter _{D P} of the downstream portion 15B of the pipe diameter _{D S1} and water pipe 15.
Also, the downstream portion 216C of the pipe diameter _{D S2} branch line 216, thin shorter than the pipe diameter _{D P} of the downstream portion 15B of the upstream portion 216B of the tube diameter _{D S1} and water pipe 15 of the branch pipe 216 Thus, the electrical resistance of the water in the downstream portion 216C of the branch pipe 216 is made (extremely) higher than the total amount of electrical resistance of the water in the upstream portion 216B of the branch pipe 216 and the downstream portion 15B of the water pipe 15. If possible, the pipe length L _S2 of the downstream part 216C of the branch pipe 216, the pipe length L _S1 of the upstream part 216B of the branch pipe 216, and the pipe length L _P of the downstream part 15B of the water pipe 15 are (L _S2 >> The relationship with (L _S1 + L _P )) may not be satisfied. Even in this case, it is possible to suppress the leakage of the charge generated in the water charge transfer portion D1 from the discharge port 23 side, and the generated charge is efficiently used for exchanging charges with the substrate W. be able to. Thereby, antistatic efficiency or static elimination efficiency can be improved.

  FIG. 7 is a diagram showing a configuration of a substrate processing apparatus 301 according to the third embodiment of the present invention. In FIG. 7, the same reference numerals as those in FIGS. 1 to 5 are assigned to portions common to the first embodiment, and description thereof is omitted. In the substrate processing apparatus 301, a water supply unit (processing liquid supply apparatus) 305 is provided instead of the water supply unit 5 (see FIG. 1) according to the first embodiment. The water supply unit 305 is different from the water supply unit 5 in that an atmospheric pressure plasma unit 317 is provided as a charge transfer unit instead of the soft X-ray irradiation unit 17 (see FIG. 2). In addition, a conductive window 318 for closing an opening (corresponding to the pipe side opening 16E in FIG. 2) formed in the pipe wall of the branch pipe 16 is provided at the attachment position 16A of the branch pipe 16. The discharge port 325 to be described next of the atmospheric pressure plasma unit 317 is attached to the branch pipe 16 in a state of facing the position facing the conductive window 318 of the branch pipe 16.

  The atmospheric pressure plasma unit 317 includes a casing 320 having a plasma generation space 319 inside, a generation electrode 321 for generating plasma, a GND electrode 322 disposed opposite to the generation electrode 321, and a gas (for example, air) in the plasma generation space 319. Or a gas supply unit 323 for supplying a mixture of nitrogen and oxygen, a mixture of argon and oxygen, or the like, and a power source (for example, a high frequency power source) 324 for applying a voltage to the generating electrode 321.

As shown in FIG. 7, a plurality of generation electrodes 321 and a plurality of GND electrodes 322 are alternately arranged. The GND electrode 322 is grounded. In a portion of the casing 320 facing the electrodes 321 and 322, a discharge port 325 for discharging the gas flowing through the plasma generation space 319 is formed.
The gas supply unit 323 includes a gas valve 326 that supplies gas from a gas supply source into the casing 320. When the gas valve 326 is opened, the gas from the gas supply source is supplied to the plasma generation space 319. As a result, the gas flows through the casing 320, flows between the generation electrode 321 and the GND electrode 322, and is discharged from the discharge port 325 to the outside of the casing 320.

  When a voltage is applied between the generation electrode 321 and the GND electrode 322 by application of the power source 324 to the generation electrode 321, plasma is generated between the generation electrode 321 and the GND electrode 322. As a result, a plasma gas flow including a large amount of positive charges and negative charges is discharged from the discharge port 325. The discharged plasma gas flow is blown to the conductive window 318, so that a large amount of positive charges and negative charges contained in the plasma gas flow are generated in the vicinity of the conductive window 318 (from the conductive window 318 and the plasma flow discharge port 325). In the space between). A large amount of positive charges and negative charges existing in the vicinity of the conductive window 318 is in the form of facing the water existing in the attachment position 16A of the branch pipe 16 through the conductive window 318. At this time, when a negative charge is generated in the object to be processed, the negative charge moves to the conductive window 318 through the processing liquid due to a potential difference generated between the conductive window 318 and a large amount existing near the conductive window. By combining with the positive charge, the negative charge of the object to be processed is absorbed.

In addition, when a positive charge is generated in the object to be processed, a negative charge existing in a large amount in the vicinity of the conductive window 318 due to a potential difference generated between the conductive window 318 and the conductive window 318 passes through the conductive window 318 and the processing liquid. It is supplied to the object to be processed and the positive charge is removed (static elimination).
Also in the substrate processing apparatus 301, processing examples equivalent to the processing examples shown in FIGS. 3 and 4 are executed. The processing operation performed in the third embodiment is the same as that in the first embodiment except for the processing operation of the atmospheric pressure plasma unit 317. Hereinafter, the processing operation of the atmospheric pressure plasma unit 317 will be described focusing on the differences.

  In the water supply process (S4) in the substrate processing apparatus 301, the control unit 40 controls the atmospheric pressure plasma unit 317 (power source 324) almost simultaneously with the opening of the branch valve 20, and the atmospheric pressure plasma unit 317 is supplied with a large amount of positive pressure. Electric charges and negative charges are generated, and a plasma gas stream is blown from the discharge port 325 toward the conductive window 318. Thus, the water flowing through the attachment position 16A (existing at the attachment position 16A) communicates with the space where a large amount of positive charges and negative charges exist through the conductive window 318. When the object to be treated is negatively charged, the electrons in the water flowing through the attachment position 16 </ b> A are directed to the positive charge in the plasma gas flow near the conductive window 318 through the conductive window 318. Moving. At that time, positive charges are temporarily generated in the water flowing through the attachment position 16A. When the object to be treated is positively charged, electrons move from the plasma gas flow near the conductive window 318 to the water flowing through the conductive window 318 to the mounting position 16A, and temporarily. A negative charge is generated in the water flowing through the attachment position 16A. In other words, a large amount of positive charge and a large amount of negative charge are present in the water flowing through the attachment position 16A (hereinafter referred to as “the charge exchange portion of water (charge exchange portion of the treatment liquid) D2”). Equal to the situation.

  As in the case of the first embodiment, during the water supply process (S4), the branch valve 20 and the branch flow rate adjustment valve 21 are opened although their opening degrees are small. Further, during the water supply process (S4), the water is in a liquid-tight state in the water pipe 15 and the branch pipe 16. Therefore, the discharge port 14 and the water charge transfer portion D2 are connected by water. Further, the liquid film 60 of water in contact with the substrate W and the discharge port 14 are connected by water. Thereby, the charge exchange part D2 of water and the liquid film 60 of water are connected through water.

When the substrate W is positively charged, as shown in FIG. 7, due to the potential difference between the water charge exchange portion D2 and the positively charged substrate W, the water charge exchange portion D2 The negative charge moves along the continuous flow of water toward the liquid film 60 of water on the upper surface of the substrate W. As a result, the positive charges on the substrate W are removed (static elimination).
Therefore, even if water is supplied to the rotating substrate W, charging of the substrate W due to contact separation with water does not occur. Therefore, charging of the substrate W during the rinsing process can be prevented. Further, even if the substrate W is charged before the rinsing process, the charge on the substrate W can be removed (that is, static elimination). As a result, device destruction due to charging of the substrate W can be prevented.

Further, since the liquidity of the water (DIW) flowing through the branch pipe 16 does not change by blowing the plasma gas flow onto the conductive window 318, the substrate W is processed using an acidic processing liquid such as carbonated water. Unlike the case, the device on the substrate W may not be adversely affected.
Even when plasma is generated, the casing 320 of the atmospheric pressure plasma unit 317 is at a low temperature (for example, 40 ° C.) that can be touched by a person. Therefore, handling of the atmospheric pressure plasma unit 317 is easy.

FIG. 8 is a diagram showing a configuration of a substrate processing apparatus 401 according to the fourth embodiment of the present invention.
In FIG. 8, the same reference numerals as those in FIGS. 1 to 5 are assigned to portions common to the first embodiment, and description thereof is omitted. In the substrate processing apparatus 401, a water supply unit (processing liquid supply apparatus) 405 is provided instead of the water supply unit 5 (see FIG. 1) according to the first embodiment. The water supply unit 405 is different from the water supply unit 5 in that a corona discharge unit (discharge unit) 417 is provided as a charge transfer unit in place of the soft X-ray irradiation unit 17 (see FIG. 2). In addition, a conductive window 418 for closing an opening (corresponding to the pipe side opening 16E in FIG. 2) formed in the pipe wall of the branch pipe 16 is provided at the attachment position 16A of the branch pipe 16. The conductive window 418 has the same configuration as the conductive window 318 of the water supply unit according to the third embodiment.

  The corona discharge unit 417 includes a discharge needle electrode 419 and a power source (for example, an AC power source) 420 for applying an AC voltage to the needle electrode 419, for example. By application to the needle electrode 419 by the power source 420, corona discharge is generated around the needle electrode 419, and the gas in the vicinity of the needle electrode 419 is ionized. Thereby, the corona discharge unit 417 is configured so that the ionized gas 421 is supplied to the conductive window 418 and covers it. The ionized gas 421 contains a large amount of negative charges (electrons and negative ions) and a large amount of positive charges (positive ions). When the ionized gas 421 is supplied to the conductive window 418, a large amount of negative charges and a large amount of positive charges contained in the ionized gas 421 are present in the vicinity of the conductive window 418. A large amount of positive charge and a large amount of negative charge existing in the vicinity of the conductive window 418 are opposed to water existing in the attachment position 16A of the branch pipe 16 through the conductive window 418 in a state where it can be exchanged. It becomes a form.

  If a positive charge is generated in the processing object, the potential difference generated between the water discharged from the water nozzle 13 and the water in the branch pipe 16 is connected to the processing object and the conductive window 418. Thus, a large amount of negative charge existing in the vicinity of the conductive window 418 (ionized gas 421) is supplied to the object to be processed through the conductive window 418 and water, and the positive charge is removed (static elimination). Conversely, when a negative charge is generated in the object to be processed, the negative charge moves to the conductive window 418 through water due to a potential difference generated between the conductive window 418 and the vicinity of the conductive window. By combining with a large amount of positive charge existing in (ionized gas 421), the negative charge of the object to be treated is absorbed.

Also in the substrate processing apparatus 401, processing examples equivalent to the processing examples shown in FIGS. 3 and 4 are executed. The processing operation performed in the fourth embodiment is the same as that in the first embodiment except for the processing operation of the corona discharge unit 417. Hereinafter, the processing operation of the corona discharge unit 417 will be described focusing on the differences.
In the water supply process (S4) in the substrate processing apparatus 401, almost simultaneously with the opening of the branch valve 20, the control unit 40 controls the corona discharge unit 417 (power source 420) to generate the ionized gas 421, and the ionized gas. 421 covers the conductive window 418. Thus, the water flowing through the attachment position 16A (existing at the attachment position 16A) communicates with the space where a large amount of positive charges and a large amount of negative charges exist through the conductive window 418. Become. When the object to be treated is negatively charged, the electrons in the water flowing through the attachment position 16 </ b> A move toward the positive charge in the ionized gas 421 near the conductive window 418 through the conductive window 418. Moving. At that time, positive charges are temporarily generated in the water flowing through the attachment position 16A. When the object to be treated is positively charged, electrons move from the ionized gas 421 in the vicinity of the conductive window 418 to the water flowing through the conductive window 418 to the mounting position 16A, and temporarily A negative charge is generated in the water flowing through the attachment position 16A. In other words, a large amount of positive charge and a large amount of negative charge are present in the water flowing through the mounting position 16A (hereinafter referred to as “a charge transfer portion of water (charge transfer portion of the treatment liquid) D3”). Equal to the situation.

  In the case of the soft X-ray irradiation unit 17, water flowing through the mounting position 16 </ b> A is directly ionized through the window material 71 that can transmit soft X-rays, but the window material 71 transmits soft X-rays. Even in the case of the conductive windows 318 and 418 that cannot be used, a large amount of positive charges and negative charges can be generated in the water flowing through the mounting position 16A on the same principle as in the case of the atmospheric pressure plasma unit 317 and the corona discharge unit 417. .

  As in the case of the first embodiment, during the water supply process (S4), the branch valve 20 and the branch flow rate adjustment valve 21 are opened although their opening degrees are small. Further, during the water supply process (S4), the water is in a liquid-tight state in the water pipe 15 and the branch pipe 16. Therefore, the discharge port 14 and the water charge transfer portion D3 are connected by water. Further, the liquid film 60 of water in contact with the substrate W and the discharge port 14 are connected by water. Thereby, the charge exchange part D3 of water and the liquid film 60 of water are connected through water.

When the substrate W is positively charged, as shown in FIG. 8, the negative charge from the water charge transfer portion D3 is caused by the potential difference between the water charge transfer portion D3 and the positively charged substrate W. The electric charge moves along the continuous flow of water toward the liquid film 60 of water on the upper surface of the substrate W. Thereby, a negative charge is supplied to the liquid film 60 of water on the upper surface of the substrate W, and the positive charge is removed (static elimination).
Therefore, even if water is supplied to the rotating substrate W, charging of the substrate W due to contact separation with water does not occur. Therefore, charging of the substrate W during the rinsing process can be prevented. Further, even if the substrate W is charged before the rinsing process, the charge on the substrate W can be removed (that is, static elimination). As a result, device destruction due to charging of the substrate W can be prevented.

Further, since the liquidity of water (DIW) flowing through the branch pipe 16 is not changed by blowing the ionized gas 421 onto the conductive window 418, the substrate W is processed using an acidic processing liquid such as carbonated water. Unlike the case, the device on the substrate W may not be adversely affected.
As a modification of the fourth embodiment, a configuration in which an alternating voltage supply unit (not shown) for applying an alternating voltage is connected to the conductive window 418 instead of the corona discharge unit 417 is conceivable. Also with this configuration, the substrate W can be discharged by supplying electric charges to the conductive window 418 and supplying the water existing in the attachment position 16A of the branch pipe 16 through the conductive window 418. .

FIG. 9 is a diagram showing a configuration of a substrate processing apparatus 501 to which the processing liquid processing apparatus according to the fifth embodiment of the present invention is applied.
The substrate processing apparatus 501 is, for example, a batch type substrate processing apparatus that collectively performs processing liquid processing (cleaning processing) on a plurality of substrates W. The substrate processing apparatus 501 includes a processing tank 502 that stores the processing liquid, and a lifter 504 that immerses the substrate W in the processing liquid stored in the processing tank 502.

  The processing tank 502 has a double tank structure including an inner tank 507 and an outer tank 508 having an upper opening opened upward. The inner tank 507 is configured to store the processing liquid and accommodate a plurality of substrates W. The outer tank 508 is provided on the outer surface of the upper opening of the inner tank 507, and the height of the upper edge thereof is set higher than the height of the upper edge of the inner tank 507. The treatment liquid that has flowed out of the outer tank 508 passes through the drain pipe 519 and is discharged or collected.

  A drain valve 520 is interposed on the bottom wall of the inner tank 507. The drainage valve 520 is a so-called piston valve that opens and closes a part of the bottom wall of the inner tank 507 by moving a piston (not shown) forward and backward. Due to the retreat of the piston (not shown), a part of the bottom surface of the inner tank 507 is detached and a drain port is formed on the bottom surface of the inner tank 507, whereby the processing liquid is quickly drained. Yes. That is, the processing tank 502 has a QDR (Quick Dump Rinse) function. The processing liquid discharged from the bottom of the inner tank 507 is sent to a waste liquid device for processing.

The lifter 504 includes a plurality of holding bars 511 extending horizontally. The plurality of substrates W are held in an upright posture (vertical posture) with the lower edges of the substrates W being brought into contact with each other by the plurality of holding bars 511 in a state where the plurality of substrates W are aligned in the front side of the page. The
The lifter 504 includes an elevating mechanism 522. The elevating mechanism 522 includes a processing position (position shown in FIG. 9) where the substrate W held by the lifter 504 is located in the inner tank 507, and a position where the substrate W held by the lifter 504 is located above the inner tank 507. The lifter 504 is moved up and down between the retracted position (not shown). Therefore, when the lifter 504 is moved to the processing position by the lifting mechanism 522, a plurality of substrates W held by the lifter 504 are immersed in the processing liquid. Thereby, the process using the process liquid with respect to the board | substrate W is performed.

The substrate processing apparatus 501 further includes a water supply unit 5 for supplying water as a processing liquid to the processing tank 502. Since the water supply unit 5 has the same configuration as that of the water supply unit 5 according to the first embodiment (see FIG. 1), the same reference numerals as those in FIG.
In the substrate processing apparatus 501, after water is stored in the processing tank 502, the substrates W are collectively put into the processing tank 502 by the lifter 504. The substrate W held by the lifter 504 is immersed in water stored in the inner tank 507. In this substrate immersion process, the supply of water from the water nozzle 13 of the water supply unit 5 is continued intermittently.

In parallel with the substrate immersion process, the control unit 40 controls the soft X-ray generator 25 (see FIG. 2; the high voltage unit 31) to irradiate the inside of the attachment position 16A of the branch pipe 16 with soft X-rays. As a result, a plasma state in which a large amount of negative charges (electrons and negative ions) and a large amount of positive charges (positive ions) are mixed is formed in the water charge transfer portion D1 (see FIG. 5).
In this substrate immersion treatment, the supply flow rate of water to the water nozzle 13 is set to a relatively large flow rate, and therefore the mode of water discharged from the discharge port 14 is stored in the discharge port 14 and the inner tank 507. It forms a continuous flow that leads to both of the water level. Furthermore, water is in a liquid-tight state in the water pipe 15 and the branch pipe 16 during the substrate immersion treatment. Therefore, the discharge port 14 and the water charge transfer portion D1 (see FIG. 5) are connected by water. Furthermore, the liquid level of the water stored in the inner tank 507 and the discharge port 14 are connected by water. Thereby, the charge transfer part D1 of water and the water stored in the inner tank 507 are connected via water.

  At this time, when the substrate W is positively charged, a negative charge (electron) from the water charge transfer portion D1 is caused by a potential difference between the charge transfer portion D1 of water (see FIG. 5) and the positively charged substrate W. ) Moves along the continuous flow of water toward the water stored in the inner tank 507. Thereby, a large amount of negative charge is supplied to the water stored in the inner tank 507, and the positively charged substrate W is neutralized.

As described above, also in the fifth embodiment, the same effects as the effects described in the first embodiment are achieved.
FIG. 10 is a diagram showing a configuration of a substrate processing apparatus 601 to which the processing liquid processing apparatus according to the sixth embodiment of the present invention is applied.
In the sixth embodiment, portions common to the fifth embodiment are denoted by the same reference numerals as in FIG. 9 and description thereof is omitted. The substrate processing apparatus 601 according to the sixth embodiment is different from the substrate processing apparatus 501 according to the fifth embodiment in that a plurality of substrates W are treated together with a cassette 602 that holds a plurality of substrates W collectively. This is a point immersed in 502. Although not shown in FIG. 10, the substrate processing apparatus 601 is provided with a configuration such as a lifter 504 (see FIG. 9) and an elevating mechanism 522 (see FIG. 9). The lifter 504 holds and lifts the cassette 602 in which a plurality of substrates W are collectively held. The cassette 602 is formed using a resin material such as polyvinyl-chloride, PTFE (polytetra-fluoroethylene), or PFA (perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer). .

In the substrate processing apparatus 601, after water is stored in the processing tank 502, a plurality of substrates W and a cassette 602 are put into the processing tank 502. Thereafter, the substrate immersion process as described in the fifth embodiment is performed.
During the substrate immersion process, the supply of water from the water nozzle 13 is continued intermittently. In this substrate immersion treatment, the supply flow rate of water to the water nozzle 13 is set to a relatively large flow rate, and therefore the mode of water discharged from the discharge port 14 is stored in the discharge port 14 and the inner tank 507. It forms a continuous flow that leads to both of the water level. Furthermore, water is in a liquid-tight state in the water pipe 15 and the branch pipe 16 during the substrate immersion treatment. Therefore, the discharge port 14 and the water charge transfer portion D1 (see FIG. 5) are connected by water. Furthermore, the liquid level of the water stored in the inner tank 507 and the discharge port 14 are connected by water. Thereby, the charge transfer part D1 of water and the water stored in the inner tank 507 are connected via water.

  At this time, if the substrate W or the cassette 602 is positively charged, the charge transfer portion D1 from the water is transferred due to a potential difference between the charge transfer portion D1 of the water and the positively charged substrate W or cassette 602. Negative charges (electrons) move toward the water stored in the inner tank 507 along the continuous flow of water. Thereby, a large amount of negative charge is supplied to the water stored in the inner tank 507, and the positively charged substrate W is neutralized.

As described above, also in the sixth embodiment, the same effects as the effects described in the first embodiment are achieved.
Further, charging of the cassette 602 during the water immersion process can be prevented. Further, even if the cassette 602 is charged before the immersion treatment, the charge on the substrate W can be removed (that is, static elimination).

The present invention can also be applied to a substrate transfer type substrate processing apparatus for processing a square (sheet-like) substrate.
FIG. 11 is an illustrative perspective view showing the configuration of a substrate processing apparatus 701 according to the seventh embodiment of the present invention. The substrate processing apparatus 701 is an apparatus used to clean the surface (surface to be processed) of a square glass substrate for a liquid crystal display device as an example of the substrate W using a processing liquid such as water. The length of one side of the rectangular substrate W to be processed is, for example, in the range of several tens of cm to 3 m, and the plate thickness is in the range of 0.05 to 1.2 mm.

Hereinafter, the horizontal direction along the conveyance direction of the substrate W described below is defined as the X direction, the horizontal direction orthogonal to the X direction is defined as the Y direction, and the vertical direction is defined as the Z direction.
The substrate processing apparatus 701 includes a roller transport unit 704 (substrate holding and transporting unit) for transporting the substrate W along the X direction, and DIW (treatment liquid) on the surface of the substrate W transported by the roller transport unit 704. A water supply unit (processing liquid supply device) 705 for supplying water (an example of water).

The substrate processing apparatus 701 includes a cleaning processing chamber 702 for supplying water to the surface of the substrate W and performing a cleaning process on the surface of the substrate W. In the cleaning treatment chamber 702, a water supply unit 705 is disposed above the roller transport unit 704.
The roller transport unit 704 is arranged extending in the left-right direction in the internal space of the cleaning processing chamber 702. The substrate W carried in from the substrate carry-in port 723 formed on the upstream side wall of the cleaning processing chamber 702 is transported through the inner space of the cleaning processing chamber 702 by the roller transport unit 704, and is transferred to the side wall of the cleaning processing chamber 702. It is carried out from the formed substrate carry-out port 724.

The substrate W is placed on the roller transport unit 704 with its surface facing upward. By transporting the substrate W along the X direction, the surface of the substrate W is scanned at the water supply position P0 and washed with water.
FIG. 12 is a perspective view showing the configuration of the roller transport unit 704.
In the roller conveyance unit 704, the conveyance rollers 755 are arranged in parallel at substantially the same pitch in the X direction. Each transport roller 755 is synchronously rotated in the same direction by driving of a drive unit (not shown).

  Each conveyance roller 755 includes a roller shaft 765 inclined with respect to a horizontal plane in a plane (YZ plane) orthogonal to the X direction. Therefore, the conveyance path realized by the roller conveyance unit 704 is entirely inclined in the Y direction with respect to the horizontal plane. The substrate W is transported while maintaining an inclined posture. The inclination angle α (see FIG. 13) of the substrate W with respect to the horizontal plane is set to about 5 °, for example.

Each conveyance roller 755 includes, for example, a pair of left and right side rollers 766 that are fitted on the left and right sides of the roller shaft 765 so as to be able to rotate together with the roller shaft 765, and a center roller 767 provided at the center of the roller shaft 765. Is a so-called partially supported transport roller.
Each of the side rollers 766 has a flange 766A provided integrally with the side roller 766 on the outer side. The ridge portion 766A prevents a lateral shift of the substrate W being transported, and prevents the substrate W from sliding along the inclined surface by the lower ridge portion 766A. Further, an O-ring (not shown) made of rubber or the like is externally fitted to each of the rollers 766 and 767, and the slippage of the substrate W is more reliably prevented by the anti-slip action of the O-ring.

  As shown in FIG. 11, the water supply unit 705 is different from the water supply unit 5 (FIG. 1 etc.) in that a plurality of (for example, three) water nozzles 713 are provided. That is, the water nozzle 713 includes a water pipe 715 for supplying water to the individual water nozzles 713 and a water collecting pipe (treatment liquid pipe) 15 to which the upstream ends of the individual water pipes 715 are connected. A branch pipe 16 branches from a predetermined branch position 15 </ b> A in the water collecting pipe 15. A water flow rate adjustment valve 719 and a water valve 718 are interposed in this order from the branch position 15A side in the downstream portion of the branch position 15A. The water valve 718 switches supply / stop of water from the plurality of water nozzles 713. The water flow rate adjustment valve 719 adjusts the flow rate of water discharged from the plurality of water nozzles 713. The water collecting pipe 15 is divided into a plurality of water pipes 715 on the downstream side of the branch position 15A. The water supply unit 705 has the same configuration as that of the water supply unit 5 (FIG. 1 and the like) except for the parts described above.

  FIG. 12 is a cross-sectional view illustrating a state in which the water supply unit 705 supplies water to the substrate W. As shown in FIG. 12, during the cleaning process, the water discharged from each discharge port 714 is supplied to the water supply position P0 on the upper surface of the substrate W, and flows along the inclined surface on the upper surface of the substrate W. Thereby, a liquid film of water is formed on the upper surface of the substrate W. The water supply flow rate to each water nozzle 713 is set to a relatively large flow rate (for example, 1 to several tens of L / min depending on the size of the glass substrate and the degree of cleaning). Therefore, the water discharged from the discharge port 714 of each water nozzle 713 is a continuous flow state in which the mode of water discharged from the discharge port 714 is connected to both the discharge port 714 and the liquid film of water on the upper surface of the substrate W. I am doing.

  In parallel with the cleaning process (water supply by the water supply unit 705), the control unit 40 controls the soft X-ray generator 25 (see FIG. 2, high voltage unit 31) to attach the branch pipe 16. The soft X-rays are irradiated inside 16A. As a result, a plasma state in which a large amount of negative charges (electrons and negative ions) and a large amount of positive charges (positive ions) are mixed is formed in the water charge transfer portion D1 (see FIG. 5).

  During the cleaning process, water is in a liquid-tight state in the water collecting pipe 15, the water pipe 715, and the branch pipe 16. Therefore, the discharge port 714 and the water charge transfer portion D1 (see FIG. 5) are connected by water. Furthermore, the liquid level of the water stored in the inner tank 507 and the discharge port 714 are connected by water. Thereby, the charge transfer part D1 of water and the water of the upper surface of the board | substrate W are connected through water.

At this time, when the substrate W is positively charged, a negative charge (electron) from the water charge transfer portion D1 is caused by a potential difference between the charge transfer portion D1 of water (see FIG. 5) and the positively charged substrate W. ) Move along the continuous flow of water toward the water on the substrate W. Thereby, a negative charge is supplied to the water on the substrate W, and the positively charged substrate W is neutralized.
As described above, also in the seventh embodiment, the same effects as the effects described in the first embodiment are achieved.

The present invention is also applicable to a processing apparatus that uses a substrate other than the substrate W as a processing target. Hereinafter, an article cleaning apparatus 801 that uses a substrate to be processed as a substrate container (container) 802 will be described as an example.
FIG. 14 is a diagram showing a configuration of an article cleaning apparatus 801 to which the processing liquid supply apparatus according to the eighth embodiment of the present invention is applied. The article cleaning apparatus 801 is an apparatus for cleaning the substrate container 802 using a processing liquid (cleaning liquid), for example, using the substrate container 802 as a processing target. FIG. 15 is a perspective view showing the configuration of the substrate container 802 shown in FIG.

  The article cleaning apparatus 801 cleans the substrate container 802 by immersing the substrate container 802 in the treatment tank 502. As shown in FIG. 14, the schematic configuration of the article cleaning apparatus 801 is equivalent to the configurations of the substrate processing apparatuses 501 and 601 according to the fifth and sixth embodiments. Therefore, in the eighth embodiment, the fifth and sixth Portions common to the embodiment are given the same reference numerals as those in FIGS. 9 and 10 and description thereof is omitted.

  As shown in FIG. 15, the substrate container 802 is a container that accommodates the substrate W in a sealed state. As an example of the substrate container 802, FOSB (Front Opening Shipping Box) can be cited. The FOSB is exclusively used to deliver the substrate W from the semiconductor wafer manufacturer to the semiconductor device manufacturer. The FOSB accommodates a plurality of unprocessed substrates W and prevents damage to the substrates W while maintaining the cleanliness of these substrates W.

  The substrate container 802 is attached to a bottomed box-shaped container body 803 having an opening 803A on the side, a lid 804 for opening and closing the opening 803A of the container body 803, and an inner wall of the container body 803. A multi-stage container support shelf 806 and a multi-stage lid support shelf 805 attached to the lid 804 are included. The substrate W is taken in and out of the container main body 803 through the opening 803A. The container body 803 and the lid 804 are each formed using a resin material such as polyvinyl-chloride.

In the article cleaning apparatus 801, after the substrate container 802 (container body 803) is put into the processing tank 502, the processing liquid (water) is stored in the processing tank 502. Accordingly, the substrate container 802 is immersed in the processing liquid (water), and the substrate container 802 is cleaned by intermittently continuing such immersion treatment for a predetermined period.
In parallel with the substrate immersion process, the control unit 40 controls the soft X-ray generator 25 (see FIG. 2; the high voltage unit 31) to irradiate the inside of the attachment position 16A of the branch pipe 16 with soft X-rays. As a result, a plasma state in which a large amount of negative charges (electrons and negative ions) and a large amount of positive charges (positive ions) are mixed is formed in the water charge transfer portion D1 (see FIG. 5).

  In this immersion treatment, the supply flow rate of water to the water nozzle 13 is set to a relatively large flow rate, so that the mode of water discharged from the discharge port 14 is stored in the discharge port 14 and the inner tank 507. It is in the form of a continuous stream that leads to both the liquid level of the water. Furthermore, water is in a liquid-tight state in the water pipe 15 and the branch pipe 16 during the substrate immersion treatment. Therefore, the discharge port 14 and the water charge generation portion D1 (see FIG. 5) are connected by water. Furthermore, the liquid level of the water stored in the inner tank 507 and the discharge port 14 are connected by water. Thereby, the charge transfer part D1 of water and the water stored in the inner tank 507 are connected via water.

At this time, when the substrate container 802 is positively charged, a difference in potential between the water charge exchange portion D1 (see FIG. 5) and the positively charged substrate container 802 causes the water charge exchange portion D1 to Negative charges (electrons) are supplied to the continuous flow of water toward the water stored in the inner tank 507, and the substrate container 802 (container body 803) is positively charged. Is neutralized.
Further, depending on the material of the substrate container 802, it is conceivable that the substrate container 802 is negatively charged. In this case, the negative charge (electrons) on the substrate container 802 is the charge exchange portion D1 of water (see FIG. 5), the negative charge of the substrate container 802 is removed (discharge) by moving to the charge transfer portion D1 through water and combining with a large amount of positive charge present in the charge transfer portion D1. Is done.

As described above, charging of the substrate container 802 during the immersion treatment can be prevented. In addition, even if the substrate container 802 is charged before the immersion treatment, the charge on the substrate container 802 can be removed (that is, static elimination).
FIG. 16 is a diagram showing a configuration of an article cleaning apparatus 901 to which the processing liquid supply apparatus according to the ninth embodiment of the present invention is applied.

  The article cleaning apparatus 901 includes a mounting table 907 for mounting the container body 803 of the substrate container 802. The article cleaning apparatus 901 also includes a water supply unit 5 that supplies water as an example of a cleaning liquid to the substrate container 802. The water supply unit 5 employs a configuration equivalent to the water supply unit 5 (see FIG. 1) according to the first embodiment. Therefore, the same reference numerals as those in the first embodiment are given to FIG.

The water nozzle 13 of the water supply unit 5 is disposed above the container main body 803 mounted on the mounting table 907 with the discharge port 14 facing downward.
In the cleaning process, water is supplied from the water supply unit 5 to the outer wall of the container body 803 of the substrate container 802. Specifically, the water valve 18 is opened, and water flowing through the water pipe 15 is supplied to the water nozzle 13. Accordingly, water is discharged downward from the discharge port 14 of the water nozzle 13 toward the upper surface of the outer wall of the container body 803.

The water supplied to the upper side surface of the outer wall of the container body 803 flows down along the upper side surface and the bottom surface, which are inclined surfaces. As a result, a liquid film 902 of water is formed on the outer wall of the container body 803. Due to the liquid film 902, dirt, dust, etc. adhering to the outer wall of the container body 803 are washed away.
In parallel with the cleaning process (water supply by the water supply unit 5), the control unit 40 controls the soft X-ray generator 25 (see FIG. 2, high voltage unit 31) to install the branch pipe 16. The soft X-rays are irradiated inside 16A. As a result, a plasma state in which a large amount of negative charges (electrons and negative ions) and a large amount of positive charges (positive ions) are mixed is formed in the water charge transfer portion D1 (see FIG. 5).

  During the cleaning process, water is in a liquid-tight state in the water pipe 15 and the branch pipe 16. Therefore, the discharge port 14 and the water charge transfer portion D1 (see FIG. 5) are connected by water. Further, the water liquid film 902 formed on the outer wall of the container body 803 and the discharge port 14 are connected by water. Thereby, the charge exchange part D1 of water and the liquid film 902 of water are connected through water.

  If the outer wall of the container body 803 is positively charged, the charge transfer of water is caused by the potential difference between the charge transfer portion D1 of the water and the outer wall of the container body 803 that is positively charged. Negative charges (electrons) from the portion D1 move along the continuous flow of water toward the liquid film of water in contact with the outer wall of the container body 803. Thereby, a negative charge is supplied to the water in contact with the outer wall of the container main body 803, and the positive charge can be removed (static elimination).

  Further, depending on the material of the substrate container 802, it is conceivable that the substrate container 802 is negatively charged. In this case, the negative charge (electrons) on the substrate container 802 is the charge exchange portion D1 of water (see FIG. 5), the negative charge of the substrate container 802 is removed (charge removal) by moving to the charge transfer portion D1 through the treatment liquid and coupling with a large amount of positive charge present in the charge transfer means D1. )

As described above, according to the ninth embodiment, charging of the container body 803 during the cleaning process can be prevented. Further, even if the container main body 803 is charged before the cleaning process, the charge on the container main body 803 can be removed (that is, static elimination).
In the eighth and ninth embodiments, the case where the container main body 803 of the substrate container 802 is cleaned has been described as an example. However, when the lid 804 and the support shelves 805 and 806 are cleaned, Similarly, by adopting a cleaning method, the lid 804 and the support shelves 805 and 806 can be cleaned while removing electricity from the lid 804 and the support shelves 805 and 806.

  Further, although the FOSB has been described as an example of the substrate container 802, the FOUP (Front Opening Unified) is used exclusively for transporting the substrate W in the factory of the semiconductor wafer manufacturer and accommodates the substrate W in a sealed state. Pod). In addition, as the substrate container 802, a substrate container of another form such as a SMIF (Standard Mechanical Interface) pod or OC (Open Cassette) can be exemplified.

In addition, the container is not limited to the one that accommodates the substrate W, and a medium container that accommodates a disk-shaped medium such as a CD, DVD, or a blue disk, or a component that accommodates an optical component such as a lens, mirror, or diffraction grating. Containers can be treated.
FIG. 17 is a diagram showing a configuration of a substrate processing apparatus 1001 according to another embodiment.
The substrate processing apparatus 1001 is different from the first embodiment in that a water supply unit (processing liquid supply apparatus) 1005 is provided instead of the water supply unit 5 (see FIG. 1). The water supply unit 1005 is different from the water supply unit 5 in that the soft X-ray irradiation unit 17 is not provided. The drain pan 1024 is formed using a metal material, and the drain pan 1024 is connected to the ground wire 1025 via a current limiting resistor 1026 having a resistance value of about 1 MΩ. The other points are common to the water supply unit 5. In FIG. 17, the same reference numerals as those in FIGS. 1 to 5 are assigned to portions common to the first embodiment, and description thereof is omitted.

Also in the substrate processing apparatus 1001, a processing example equivalent to the processing examples shown in FIGS. 3 and 4 is executed.
In the water supply process (S4), the control unit 40 (see FIG. 1) opens the valve 18 and discharges water from the discharge port 14 of the water nozzle 13. The control unit 40 opens the branch valve 20 slightly earlier (for example, about several seconds) than the opening of the water valve 18. Thereby, the water flowing through the water pipe 15 flows into the branch pipe 16 from the branch position 15 </ b> A and flows through the branch pipe 16. The water flowing through the branch pipe 16 is discharged from the discharge port 23 of the discharge nozzle 22.

  The water supply flow rate to the water nozzle 13 during the water supply process (S4) is set to a relatively large flow rate (for example, 0.5 to 2.0 L / min). The water supplied to the upper surface of the substrate W receives centrifugal force due to the rotation of the substrate W and flows toward the peripheral edge of the substrate W (spreads over the entire area of the substrate W). Thereby, a liquid film of water (equivalent to the liquid film 60 of water shown in FIG. 5) is formed on the upper surface of the substrate W in contact with the entire area of the upper surface (covering the entire area of the upper surface). The chemical liquid adhering to the upper surface of the substrate W is washed away by the water liquid film.

  Since the water supply flow rate to the water nozzle 13 is set to a relatively large flow rate, the mode of water discharged from the discharge port 14 is connected to both the discharge port 14 and the liquid film of water on the upper surface of the substrate W. It has a continuous flow. In other words, the opening of the water flow rate adjustment valve 19 is such that the mode of water discharged from the discharge port 14 is a continuous flow that connects both the discharge port 14 and the liquid film of water on the upper surface of the substrate W. Is set.

  The water discharged from the discharge port 23 of the discharge nozzle 22 is received by the drain pan 1024. The water supply flow rate to the discharge nozzle 22 during the water supply process (S4) is set to a relatively large flow rate (for example, 0.5 to 2.0 L / min). Therefore, the aspect of the water discharged from the discharge port 23 of the discharge nozzle 22 has a continuous flow that leads to both the discharge port 23 and the drain pan 1024.

During the water supply process (S4), the branch valve 20 and the branch flow rate adjustment valve 21 are opened. Further, during the water supply process (S4), the water is in a liquid-tight state in the water pipe 15 and the branch pipe 16. Therefore, the discharge port 14 and the drain pan 1024 connected to the ground are connected by water.
When the substrate W is positively charged, electrons are supplied from the ground with a potential difference between the drain pan 1024 that is grounded and the substrate W that is positively charged, and the ground wire 1025, the current limiting resistor 1026, It moves to the substrate W through the drain pan 1024 and the continuous flow of water. Thereby, the substrate W is neutralized or prevented from being charged. At this time, if there is no current limiting resistor 1026 for limiting the current flowing through the water in the branch pipe 16, a large current instantaneously flows from the highly charged substrate to the low-potential processing liquid, resulting in a high energy discharge. May cause damage to the substrate W, but the presence of the current limiting resistor 1026 can prevent such a problem. Note that, under the condition that the electrical resistance of the processing liquid from the surface of the substrate W to the ground wire 1025 is about 1 MΩ or more, the current limiting resistance 1026 is unnecessary because the processing liquid functions as the current limiting resistance 1026. Even in this case, even if the current limiting resistor 1026 is provided, there is almost no influence on the grounding effect, and it is preferable to provide the current limiting resistor 1026 in case the above condition is not satisfied.

In this embodiment, a portion (at least a tip portion) on the downstream side of the branch valve 20 of the branch pipe 16 may be constituted by a conductive tube, and the conductive tube may be grounded. In this case, the configuration of the conductive drain pan 1024 can be omitted.
In this other embodiment, as shown by a two-dot chain line in FIG. 17, a gas pipe 1010 for supplying purge gas (nitrogen, air, etc.) may be connected to the middle part of the branch pipe 16. A gas valve 1011 for opening and closing the gas pipe 1010 is interposed in the gas pipe 1010. After stopping the discharge of water from the water pipe 15, the gas valve 1011 is opened, and the purge gas is circulated to the part downstream of the branch valve 20 of the branch pipe 16, so that water droplets adhere to the part. Can be prevented. Thereby, the dripping of the water from the discharge port 23 can be suppressed reliably.

  When the supply of water from the water nozzle 13 is stopped, the branch valve 20 is closed and the branch pipe 16 is closed. In the unlikely event that the branch valve 20 fails and the branch valve 20 remains open, there is a risk that water will flow down the branch pipe 16. In this case, it is conceivable that the continuous flow of water discharged from the discharge port 23 of the discharge nozzle 22 connects both the discharge port 23 and the drain pan 1024. In this case, the drain pan 1024 is made of metal. For this reason, metal contamination may occur in water and the substrate W. However, in such a case, when the gas valve 1011 is opened and the purge gas is circulated to the downstream side of the branch valve 20 of the branch pipe 16, the water discharged from the discharge port 23 is drained. The water is in the form of droplets instead of a continuous stream. Thereby, the concern about the metal contamination as described above can be solved.

As mentioned above, although embodiment of this invention was described, this invention can also be implemented with another form.
For example, in the water supply units 5, 305, 405, and 705, the flow rate of water in the branch pipe 16 is set to a small flow rate so that the processing liquid discharged from the discharge port 23 using the branch flow rate adjustment valve 21 does not become a continuous flow. Although adjusted, a configuration is adopted in which a continuous flow is not discharged to the discharge port 23 (for example, only a droplet flow is discharged). With this configuration, the processing liquid discharged from the discharge port 23 does not become a continuous flow. It may be made like. In this case, a configuration in which the branch flow rate adjustment valve 21 is omitted may be used.

Moreover, although the case where the flow rate of the water in the water pipe 15 is adjusted using the water flow rate adjustment valve 19 so that the processing liquid discharged from the discharge ports 14 and 714 becomes a continuous flow has been described as an example, If water is discharged at a flow rate that forms a continuous flow from the outlets 14 and 714, the water flow rate adjustment valve 19 may be omitted.
The invention according to the second embodiment can be used in combination with the invention according to the third embodiment or the invention according to the fourth embodiment. That is, in the water supply unit 305 according to the third embodiment and the water supply unit 405 according to the fourth embodiment, a branch pipe 216 can be provided instead of the branch pipe 16.

In the fifth, sixth, eighth, and ninth embodiments, the case where the substrate processing apparatus and the article cleaning apparatus include the water supply unit 5 has been described as an example. Supply units 205, 305, 405, and 705 may be provided.
In the seventh embodiment, the case where the substrate processing apparatus 701 includes the water supply unit 705 has been described as an example. However, instead of the water supply unit 705, the water supply units 5, 205, 305, and 405 are provided. It may be.

Further, the water as the treatment liquid is not limited to DIW, and any one of electrolytic ion water, hydrogen water, and ozone-dissolved water can be adopted as water. In this case, the volume resistivity is preferably 10 ¹⁰ Ωcm or less from the viewpoint of static elimination performance. The theoretical value of volume resistivity of DIW is 1.8 × 10 ⁷ Ωcm, which is included in a preferable range.
Further, the treatment liquid is not limited to water and may be a chemical liquid (diluted chemical liquid). In this case, as the chemical solution, hydrofluoric acid diluted to a predetermined concentration, BHF (Buffered HF), APM (ammonia-hydrogen peroxide mixture), TMAH (tetramethylammonium hydroxide aqueous solution), ammonia Water, HPM (hydrochloric acid / hydrogen peroxide mixture), alcohol, organic solvent, etc. can be used.

  The substrate W has been described by taking a semiconductor wafer or a glass substrate for a liquid crystal display device as an example. However, the substrate W can also include a substrate for plasma display, a substrate for FED (Field Emission Display), and an OLED (organic electroluminescence). ) Substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, solar cell substrates, and the like. Moreover, as a material of a board | substrate, SiC, quartz, sapphire, a plastic, a ceramic, etc. other than silicon and glass can be illustrated.

  The above modifications may be implemented in any combination, and various design changes can be made within the scope of the matters described in the claims.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Spin chuck (substrate holding rotation means)
5 Water supply unit (treatment liquid supply device)
13 Treatment liquid nozzle 14 Discharge port 15 Treatment liquid piping (water piping)
15A Branch position 15B Downstream portion (portion downstream from the branch position of the branch pipe)
16 Branch piping 17 Soft X-ray irradiation unit 19 Water flow control valve (first flow control unit)
21 Branch flow control valve (second flow control unit)
23 Discharge port 40 Control unit (discharge control unit, discharge control unit)
71 Window member (conductive window)
201 substrate processing apparatus 205 water supply unit (processing liquid supply apparatus)
216 Branch piping 216A Mounting position (opposite position)
216B Upstream part (upstream part from the opposite position in the branch pipe)
216C Downstream portion (portion downstream from the opposing position in the branch pipe)
301 substrate processing apparatus 305 water supply unit (processing liquid supply apparatus)
317 Atmospheric pressure plasma unit 318 Conductive window 401 Substrate processing apparatus 405 Water supply unit (processing liquid supply apparatus)
417 Corona discharge unit (discharge unit)
418 Conductive window 501 Substrate processing device 502 Processing tank 601 Substrate processing device 701 Substrate processing device 704 Roller transport unit (substrate holding transport means)
705 Water supply unit (treatment liquid supply device)
713 Treatment liquid nozzle 714 Discharge port 802 Substrate container (object to be treated)
W substrate (object to be processed)

Claims (13)

A processing liquid nozzle having a discharge port for discharging the processing liquid to the processing object;
A treatment liquid pipe for supplying a treatment liquid to the treatment liquid nozzle;
A branch pipe branched from the treatment liquid pipe;
A processing liquid supply apparatus that includes a processing liquid that is disposed opposite to the branch pipe and that exists inside the branch pipe and a charge transfer unit that transfers electrons through a conductive window.   The processing liquid according to claim 1, wherein the processing liquid discharged from the discharge port is set to a flow rate such that the processing liquid forms a continuous flow that connects both the discharge port and the processing target. Feeding device.   The processing liquid supply apparatus according to claim 1, wherein the branch pipe has a discharge port, and includes a discharge pipe for discharging a processing liquid flowing through the branch pipe.   The processing liquid supply apparatus according to claim 3, wherein the processing liquid discharged from the discharge port is set to a small flow rate so that the processing liquid does not become a continuous flow.   The treatment liquid pipe and the branch pipe have an electrical resistance value of a treatment liquid contained in a portion of the branch pipe downstream of the facing position facing the charge transfer unit, compared to the facing position in the branch pipe. The processing according to claim 3 or 4, wherein the electrical resistance value of the upstream portion and the sum of the electrical resistance values of the downstream portion of the processing liquid piping with respect to the branching position of the branch piping are set. Liquid supply device.   The processing liquid supply apparatus according to claim 1, wherein the charge transfer unit includes an X-ray irradiation unit that irradiates the processing liquid existing in the branch pipe with X-rays.   The processing liquid supply apparatus according to claim 1, wherein the charge transfer unit includes an atmospheric pressure plasma unit that emits a plasma gas in an atmospheric pressure environment.   The processing liquid supply apparatus according to claim 1, wherein the charge transfer unit includes a discharge unit that generates a discharge and supplies the ionized gas.   A substrate holding means for holding a substrate and the processing liquid supply device according to any one of claims 1 to 8, wherein the processing liquid discharged from the discharge port is held by the substrate holding means. A substrate processing apparatus for supplying the main surface of the substrate.   A treatment tank that stores a treatment liquid and includes a treatment tank that immerses a treatment object in the treatment liquid and the treatment liquid supply device according to any one of claims 1 to 8, wherein the treatment is discharged from the discharge port. A substrate processing apparatus in which a liquid is stored in the processing tank. A processing liquid supply method for discharging a processing liquid from an outlet of a processing liquid nozzle of a processing liquid supply apparatus and supplying the processing liquid to a processing object,
An opposing arrangement step of arranging the discharge port opposite to the processing object;
A treatment liquid existing inside a branch pipe branched from a treatment liquid pipe for supplying the treatment liquid to the treatment liquid nozzle; and a charge transfer process for transferring charges by a charge transfer unit;
In parallel with the charge transfer step, a processing liquid discharge step for discharging a processing liquid from the discharge port, and in the processing liquid discharge step, the processing liquid is in a liquid state between the discharge port and the processing object. A processing solution supply method that is connected.   The processing liquid supply method according to claim 11, wherein in the processing liquid discharge step, the processing liquid discharged from the discharge port is in a continuous flow state connected to both the discharge port and the processing object. A substrate processing method for processing a main surface of a substrate using a processing liquid supplied from a processing liquid supply apparatus,
A counter-arrangement step of disposing the discharge port so as to oppose the main surface of the substrate held by the substrate holding means;
A treatment liquid existing inside a branch pipe branched from a treatment liquid pipe for supplying the treatment liquid to the treatment liquid nozzle; and a charge transfer process for transferring charges by a charge transfer unit;
In parallel with the charge transfer step, including a treatment liquid discharge step of discharging a treatment liquid from the discharge port,
In the processing liquid discharge step, the processing liquid is connected in a liquid state between the discharge port and the main surface of the substrate.

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