JPS6047400A - Device for removing soltion charge - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The invention relates to an apparatus for removing static electricity from bath liquids or droplets.

In recent years, integrated circuits mounted on conductive substrates have become more highly integrated with advances in microfabrication technology for the surface of semiconductor substrates, and we are now seeing the realization of large-capacity, high-speed VLSIs. In the future, further refinement and development of microfabrication techniques for the surface of semiconductor substrates, including photolithography techniques, will be necessary for further increasing the degree of integration of integrated circuits. Furthermore, VLSIV formed by making full use of such microfabrication technology (C-
In C, cleaning of the v1-Sl manufacturing process is required. This is due to the fact that as the dimensions of the individual elements constituting VLSI have been miniaturized, there has been a risk of contamination or adhesion of fine particles to the elements.

This is because the νL8+ 'F' property deteriorates or the retention of non-defective products is completely reduced. For this purpose, research and development of cleaning technology for air, pure water, chemicals, and liquids (IJ) is becoming increasingly important.

”-However, here, the cleaning method for the above gases, liquids, solids, etc.
As a result, static electricity is likely to occur on the materials being handled. This is because static electricity generated due to contact or friction between a plate and a solid, a solid and a solid, etc.
:[-・:Body C') Due to the lower electrical conductivity associated with cleaning, it becomes difficult to move and the r+V 7 or solid ((because it becomes easily charged).

In this way, electrostatic charging of liquids and solids is caused by the front 6 pi Vl, S
iK is a bad influence. For example, if water, chemicals, etc. are used, the integrated circuit parts formed on the surface of the semi-integrated substrate 1, for example, the thin insulating film that constitutes the capacitance, will cause irreversible damage. It is difficult to form a high-quality multiplicative path G
I will do it. This is the disorder caused by Shizuka Shiki Tei'1↓i.

As the cylindrical integration of integrated circuits progresses, TIC processing becomes more apparent. This is because, with increasing integration, the element dimensions have become smaller and smaller, and the size of the thinner elements used has become smaller.

This is because it becomes thinner and it becomes easier for Lf≧ to occur due to electrostatic charging.

The unexploded IJ4 is intended to facilitate the production of high-quality VLSI by providing a device for removing static Mf charge from the bath liquid during such electrostatic charging. C) in non-invention
”:, Is it true text on the bath liquid outlet? J negative ion θ”.

Alternatively, a high-voltage source is provided, and the ion source or positive or negative ions generated from the high-voltage source are irradiated onto the solution at 11 times. The pure water or chemical solution is neutralized, and the semiconductor substrate is
The semiconductor substrate σ] seedlings and electricity a) 7 groups that are likely to occur during cleaning are removed.

It's easy to find new knowledge in addition to non-inventions. That is, as shown in FIG. 1, the solution 102 flowing through the molten K pipe 1012
An electric charge 104 generated from contact or friction between the inner wall 103 of the pipe and the bath liquid 1 (2V) enters the pipe 101, leaving a charge 105 of the opposite sign to the electric charge 104 in the pipe 101.Here, generally speaking, the pipe 1 (11 is Since the ground 1()6 is made somewhere, the opposite charge 105 passes through the ground J11.1.
4 is because the electrical conductivity of the solution is K (7'j'') at the same time as cleaning.
1 remains in the liquid. When the body and the liquid come into contact with each other, static electricity is generated on the liquid. In this respect, non-invention is
The electrostatically charged charge is inversely t0; , Piping 101
The solution 102 should be completely neutralized depending on the material of the bath liquid 102 and the conditions ((depending on the history &, 1, t1- etc. 1/) on the flow rate of the solution 102. Determine the ion type and ion concentration and irradiate.

and V (Examples will be used to explain the present invention in detail.

2nd,',:'i'=3i'JFj:,Two examples of application of the present invention are shown. IS sheep these 2 cases + ((with 11
I explain. FIG. 2 shows an application of the invention to the cleaning of materials that are essential during the manufacture of integrated circuits for semiconductor substrates and the like. Multi-holding platform 202 for substances to be cleaned in the solution cleaning tank 20
After attaching the substance to be cleaned 203 on top, the cleaning pipe 20
When the Sagi 205 is introduced into the bath first cleaning tank 201, the cleaning liquid 205 is passed through all the nozzles 206 to form a magnetic cleaning liquid 207 and sprinkled on the substance to be cleaned 203, and the ion source or A frost-pressing source 208 is provided directly below the nozzle opening to cause electrostatic discharge of the solution 205.

Here, the pipe 204 is cleaned with stainless steel metal 8! i
, 205 is pure water, since pure water is easily charged negatively, a positive ion total ion source or high voltage 'Ichihara 208.1:, 0 River (
Irradiate into the water. Or, if the piping 204 is made of Q+ molecules such as polyethylene or vinyl chloride,
Since pure water tends to be positively charged, negative ions are drawn out from the ion source and charged into the pure water. In this way, electrostatic charging of the substance to be cleaned 203 that is likely to occur during cleaning is reduced. Incidentally, the discharge port 209 is used for discarding the cleaning liquid.

Figure (1) shows a method for removing electrostatic charge that occurs when a photoresist solution is applied onto the surface of a semiconductor substrate. On the support stand 302 having the rotating shaft 301 (half! After all the components of the semiconductor substrate 303 are adsorbed and removed; the photoresist is placed on the surface of the semiconductor substrate 1103 through the entirety of the resist liquid pipe 304). The photoresist solution is irradiated with 11 amps through a positive or negative ion source 306 during a still, low-air event. Here, Ison's sole selection is the material of the photoresist liquid piping and the
Depends on the mood. This is because, as mentioned in the first disaster h113 example, the sign of the infiltration energy differs depending on the material. In addition, block V & 4k 307 here
is for removing the photoresist solution during application of the photoresist solution.

[Brief explanation of the drawing]

Figure 1 shows the electrostatic charge 'fi of the solution that occurs when it comes into contact with the solution.
This is a drawing showing the state of I, @Figure 2 and Figure 3 are screw 1]
It is a drawing showing an application example of "YU". -481- Haku 3 figure

Claims (1)

[Claims] An ion source that generates all positive and negative ions is provided at least in part of the piping that introduces the entire solution or the nozzle port that exhausts the solution into the atmosphere, and the ions from the ion source are irradiated into the bath liquid. Solution charge removal device characterized by the ability to perform V-0