JP2015175851A - 発光スペクトル分析による欠陥の分離のためのシステムと方法 - Google Patents
発光スペクトル分析による欠陥の分離のためのシステムと方法 Download PDFInfo
- Publication number
- JP2015175851A JP2015175851A JP2015051375A JP2015051375A JP2015175851A JP 2015175851 A JP2015175851 A JP 2015175851A JP 2015051375 A JP2015051375 A JP 2015051375A JP 2015051375 A JP2015051375 A JP 2015051375A JP 2015175851 A JP2015175851 A JP 2015175851A
- Authority
- JP
- Japan
- Prior art keywords
- light
- objective lens
- lens assembly
- dut
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000295 emission spectrum Methods 0.000 title claims description 5
- 238000004458 analytical method Methods 0.000 title description 9
- 238000002955 isolation Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 claims abstract description 66
- 238000012360 testing method Methods 0.000 claims abstract description 25
- 238000003384 imaging method Methods 0.000 claims abstract description 8
- 238000001228 spectrum Methods 0.000 claims description 29
- 230000007547 defect Effects 0.000 claims description 18
- 229920006395 saturated elastomer Polymers 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 230000004807 localization Effects 0.000 abstract description 4
- 230000003068 static effect Effects 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000001514 detection method Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 238000000386 microscopy Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461952861P | 2014-03-13 | 2014-03-13 | |
| US61/952,861 | 2014-03-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015175851A true JP2015175851A (ja) | 2015-10-05 |
| JP2015175851A5 JP2015175851A5 (enExample) | 2018-04-19 |
Family
ID=54068613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015051375A Pending JP2015175851A (ja) | 2014-03-13 | 2015-03-13 | 発光スペクトル分析による欠陥の分離のためのシステムと方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US10041997B2 (enExample) |
| JP (1) | JP2015175851A (enExample) |
| SG (1) | SG10201501966TA (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016216828A1 (de) | 2015-09-07 | 2017-03-09 | Yazaki Corporation | Verbindungsstück |
| US9903824B2 (en) | 2014-04-10 | 2018-02-27 | Fei Efa, Inc. | Spectral mapping of photo emission |
| US10041997B2 (en) | 2014-03-13 | 2018-08-07 | Fei Efa, Inc. | System and method for fault isolation by emission spectra analysis |
| WO2024241626A1 (ja) | 2023-05-19 | 2024-11-28 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10213635A (ja) * | 1997-01-21 | 1998-08-11 | Carl Zeiss Jena Gmbh | 放射分布検出用顕微鏡システム及びその操作方法 |
| US6051828A (en) * | 1997-07-02 | 2000-04-18 | Texas Instruments Incorporated | Light emission noise detection and characterization |
| JP2001203248A (ja) * | 2000-01-18 | 2001-07-27 | Hitachi Ltd | エミッション顕微鏡を用いた不良解析方法およびそのシステム並びに半導体装置の製造方法 |
| JP2001319955A (ja) * | 2000-05-10 | 2001-11-16 | Hitachi Ltd | 発光解析方法およびその装置 |
| JP2002014145A (ja) * | 2000-06-29 | 2002-01-18 | Hamamatsu Photonics Kk | 半導体デバイス検査装置及び半導体デバイス検査方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3601492A (en) * | 1967-11-20 | 1971-08-24 | Monsanto Co | Apparatus for measuring film thickness |
| JPH076923B2 (ja) * | 1990-11-09 | 1995-01-30 | 三菱電機株式会社 | 空間周波数フィルタ、その空間周波数フィルタの製造方法及びパターン欠陥検査装置 |
| US5220403A (en) | 1991-03-11 | 1993-06-15 | International Business Machines Corporation | Apparatus and a method for high numerical aperture microscopic examination of materials |
| US5208648A (en) | 1991-03-11 | 1993-05-04 | International Business Machines Corporation | Apparatus and a method for high numerical aperture microscopic examination of materials |
| JP3314440B2 (ja) * | 1993-02-26 | 2002-08-12 | 株式会社日立製作所 | 欠陥検査装置およびその方法 |
| KR960015001A (ko) * | 1994-10-07 | 1996-05-22 | 가나이 쓰토무 | 반도체 기판의 제조방법과 피검사체상의 패턴결함을 검사하기 위한 방법 및 장치 |
| WO1997046865A1 (en) * | 1996-06-04 | 1997-12-11 | Tencor Instruments | Optical scanning system for surface inspection |
| US5940545A (en) | 1996-07-18 | 1999-08-17 | International Business Machines Corporation | Noninvasive optical method for measuring internal switching and other dynamic parameters of CMOS circuits |
| US6512385B1 (en) * | 1999-07-26 | 2003-01-28 | Paul Pfaff | Method for testing a device under test including the interference of two beams |
| US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| JP2002303586A (ja) * | 2001-04-03 | 2002-10-18 | Hitachi Ltd | 欠陥検査方法及び欠陥検査装置 |
| US6621275B2 (en) | 2001-11-28 | 2003-09-16 | Optonics Inc. | Time resolved non-invasive diagnostics system |
| US6850321B1 (en) * | 2002-07-09 | 2005-02-01 | Kla-Tencor Technologies Corporation | Dual stage defect region identification and defect detection method and apparatus |
| US6943572B2 (en) | 2002-09-03 | 2005-09-13 | Credence Systems Corporation | Apparatus and method for detecting photon emissions from transistors |
| US6891363B2 (en) | 2002-09-03 | 2005-05-10 | Credence Systems Corporation | Apparatus and method for detecting photon emissions from transistors |
| US7525659B2 (en) * | 2003-01-15 | 2009-04-28 | Negevtech Ltd. | System for detection of water defects |
| US7012537B2 (en) | 2004-02-10 | 2006-03-14 | Credence Systems Corporation | Apparatus and method for determining voltage using optical observation |
| JP4485904B2 (ja) * | 2004-10-18 | 2010-06-23 | 株式会社日立ハイテクノロジーズ | 検査装置及び検査方法 |
| US7733100B2 (en) * | 2005-08-26 | 2010-06-08 | Dcg Systems, Inc. | System and method for modulation mapping |
| JP4928862B2 (ja) * | 2006-08-04 | 2012-05-09 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
| US20090002656A1 (en) | 2007-06-29 | 2009-01-01 | Asml Netherlands B.V. | Device and method for transmission image detection, lithographic apparatus and mask for use in a lithographic apparatus |
| US7852475B2 (en) * | 2007-08-13 | 2010-12-14 | Jds Uniphase Corporation | Scanning spectrometer with multiple photodetectors |
| US20090147255A1 (en) | 2007-12-07 | 2009-06-11 | Erington Kent B | Method for testing a semiconductor device and a semiconductor device testing system |
| JP5352111B2 (ja) * | 2008-04-16 | 2013-11-27 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びこれを用いた欠陥検査装置 |
| JP5007979B2 (ja) * | 2008-05-22 | 2012-08-22 | 独立行政法人産業技術総合研究所 | 欠陥を検査する方法及び欠陥検査装置 |
| US8988653B2 (en) | 2009-08-20 | 2015-03-24 | Asml Netherlands B.V. | Lithographic apparatus, distortion determining method, and patterning device |
| US20110242312A1 (en) * | 2010-03-30 | 2011-10-06 | Lasertec Corporation | Inspection system and inspection method |
| US20120326060A1 (en) * | 2011-06-22 | 2012-12-27 | Boaz Kenane | Testing method for led wafer |
| US8867580B2 (en) * | 2012-05-15 | 2014-10-21 | Finisar Corporation | Wavelength tunable laser |
| JP2015175851A (ja) | 2014-03-13 | 2015-10-05 | ディーシージー システムズ、 インコーポライテッドDcg Systems Inc. | 発光スペクトル分析による欠陥の分離のためのシステムと方法 |
| US9903824B2 (en) | 2014-04-10 | 2018-02-27 | Fei Efa, Inc. | Spectral mapping of photo emission |
-
2015
- 2015-03-13 JP JP2015051375A patent/JP2015175851A/ja active Pending
- 2015-03-13 US US14/657,605 patent/US10041997B2/en active Active
- 2015-03-13 SG SG10201501966TA patent/SG10201501966TA/en unknown
-
2018
- 2018-07-03 US US16/027,159 patent/US10620263B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10213635A (ja) * | 1997-01-21 | 1998-08-11 | Carl Zeiss Jena Gmbh | 放射分布検出用顕微鏡システム及びその操作方法 |
| US6051828A (en) * | 1997-07-02 | 2000-04-18 | Texas Instruments Incorporated | Light emission noise detection and characterization |
| JP2001203248A (ja) * | 2000-01-18 | 2001-07-27 | Hitachi Ltd | エミッション顕微鏡を用いた不良解析方法およびそのシステム並びに半導体装置の製造方法 |
| JP2001319955A (ja) * | 2000-05-10 | 2001-11-16 | Hitachi Ltd | 発光解析方法およびその装置 |
| JP2002014145A (ja) * | 2000-06-29 | 2002-01-18 | Hamamatsu Photonics Kk | 半導体デバイス検査装置及び半導体デバイス検査方法 |
Non-Patent Citations (1)
| Title |
|---|
| THIERRY PARRASSIN, SYLVAIN DUDIT, MICHEL VALLET, ANTOINE REVERDY, HERVE DESLANDES: ""Introduction of spectral mapping through transmission grating, derivative technique of photon emis", ISTFA 2014: CONFERENCE PROCEEDINGS FROM THE 40TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANA, JPN6019002978, November 2014 (2014-11-01), pages 115 - 124 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10041997B2 (en) | 2014-03-13 | 2018-08-07 | Fei Efa, Inc. | System and method for fault isolation by emission spectra analysis |
| US10620263B2 (en) | 2014-03-13 | 2020-04-14 | Fei Efa, Inc. | System and method for fault isolation by emission spectra analysis |
| US9903824B2 (en) | 2014-04-10 | 2018-02-27 | Fei Efa, Inc. | Spectral mapping of photo emission |
| DE102016216828A1 (de) | 2015-09-07 | 2017-03-09 | Yazaki Corporation | Verbindungsstück |
| DE102016216828B4 (de) * | 2015-09-07 | 2021-06-10 | Yazaki Corporation | Verbindungsstück |
| WO2024241626A1 (ja) | 2023-05-19 | 2024-11-28 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150260789A1 (en) | 2015-09-17 |
| US20180328985A1 (en) | 2018-11-15 |
| US10041997B2 (en) | 2018-08-07 |
| US10620263B2 (en) | 2020-04-14 |
| SG10201501966TA (en) | 2015-10-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6313259B2 (ja) | 光子放出のスペクトルマッピング | |
| US20050002028A1 (en) | Time resolved emission spectral analysis system | |
| KR100734186B1 (ko) | 집적 회로의 동적 진단 테스트를 위한 장치 및 방법 | |
| US7733100B2 (en) | System and method for modulation mapping | |
| US6967491B2 (en) | Spatial and temporal selective laser assisted fault localization | |
| US10620263B2 (en) | System and method for fault isolation by emission spectra analysis | |
| US9739831B2 (en) | Defect isolation methods and systems | |
| JP6166032B2 (ja) | 半導体デバイス検査装置及び半導体デバイス検査方法 | |
| US20050036151A1 (en) | Method and device for opically testing semiconductor elements | |
| KR20160135845A (ko) | 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 | |
| JPH0578761B2 (enExample) | ||
| Niu et al. | Laser logic state imaging (llsi) | |
| CN115326827B (zh) | 半导体检查装置 | |
| US7616312B2 (en) | Apparatus and method for probing integrated circuits using laser illumination | |
| US11967061B2 (en) | Semiconductor apparatus examination method and semiconductor apparatus examination apparatus | |
| US20170176520A1 (en) | Tunable wavelength electro-optical analyzer | |
| JP2016109673A (ja) | レーザボルテージイメージングのシステム及び方法 | |
| WO2016056109A1 (ja) | 解析装置及び解析方法 | |
| US12510591B2 (en) | Semiconductor failure analysis device and semiconductor failure analysis method | |
| US20240361382A1 (en) | Semiconductor failure analysis device and semiconductor failure analysis method | |
| US9417281B1 (en) | Adjustable split-beam optical probing (ASOP) | |
| JP2011228354A (ja) | 故障解析装置及び故障解析方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7426 Effective date: 20150529 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150529 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180308 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180308 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181226 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190205 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190425 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190705 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20191217 |